DE102006060899A1 - Lead wire, method of making such and assembly - Google Patents

Lead wire, method of making such and assembly Download PDF

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Publication number
DE102006060899A1
DE102006060899A1 DE102006060899A DE102006060899A DE102006060899A1 DE 102006060899 A1 DE102006060899 A1 DE 102006060899A1 DE 102006060899 A DE102006060899 A DE 102006060899A DE 102006060899 A DE102006060899 A DE 102006060899A DE 102006060899 A1 DE102006060899 A1 DE 102006060899A1
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DE
Germany
Prior art keywords
layer
coating
connecting wire
solderable
wire
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
DE102006060899A
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German (de)
Inventor
Rainer Dr. Dohle
Holger Schulze
Jörg Goßler
Frank Dr.-Ing. Rudolf
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Micro-Systems-Engineering & Co KG GmbH
Technische Universitaet Dresden
Micro Systems Engineering GmbH
Original Assignee
Micro-Systems-Engineering & Co KG GmbH
Technische Universitaet Dresden
Micro Systems Engineering GmbH
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Filing date
Publication date
Application filed by Micro-Systems-Engineering & Co KG GmbH, Technische Universitaet Dresden, Micro Systems Engineering GmbH filed Critical Micro-Systems-Engineering & Co KG GmbH
Priority to DE102006060899A priority Critical patent/DE102006060899A1/en
Priority to PCT/EP2007/010310 priority patent/WO2008080467A1/en
Publication of DE102006060899A1 publication Critical patent/DE102006060899A1/en
Ceased legal-status Critical Current

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    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
    • H01B1/02—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors mainly consisting of metals or alloys
    • H—ELECTRICITY
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    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
    • H01B1/02—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors mainly consisting of metals or alloys
    • H01B1/026—Alloys based on copper
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  • Engineering & Computer Science (AREA)
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  • Wire Bonding (AREA)

Abstract

Die Erfindung betrifft einen Anschlussdraht (5, 5', 5''), vorzugsweise in Form eines Bändchens, mit einem elektrisch gut leitenden Drahtkern (10), vorzugsweise bestehend zumindest überwiegend aus Gold und/oder einer Goldlegierung und/oder Kupfer und/oder einer Kupferlegierung und einer auf der Oberfläche des Kerns angeordneten Beschichtung. Der Anschlussdraht zeichnet sich dadurch aus, dass er auf einer Seite eine lötfähige Beschichtung (14) und auf der gegenüberliegenden Seite eine bondfähige Beschichtung (12) aufweist. Die Erfindung betrifft außerdem eine Baugruppe mit einem derartigen Anschlussdraht und ein Verfahren zur Herstellung eines derartigen Anschlussdrahts.The invention relates to a connecting wire (5, 5 ', 5' '), preferably in the form of a ribbon, with a highly electrically conductive wire core (10), preferably consisting at least predominantly of gold and / or a gold alloy and / or copper and / or a copper alloy and a coating disposed on the surface of the core. The connecting wire is characterized in that it has a solderable coating (14) on one side and a bondable coating (12) on the opposite side. The invention also relates to an assembly with such a connection wire and a method for producing such a connection wire.

Description

Die Erfindung betrifft einen Anschlussdraht, vorzugsweise in Form eines Bändchens, mit einem elektrisch gut leitenden Drahtkern, vorzugsweise bestehend zumindest überwiegend aus Gold und/oder einer Goldlegierung und/oder Kupfer und/oder einer Kupferlegierung, und einer auf der Oberfläche des Kerns angeordneten Beschichtung. Die Erfindung betrifft ferner ein Verfahren zur Herstellung eines Anschlussdrahts sowie eine Baugruppe mit einem Substrat und einem Halbleiterchip.The The invention relates to a connection wire, preferably in the form of a Ribbon, with a good electrical conductivity wire core, preferably consisting at least predominantly of gold and / or a Gold alloy and / or copper and / or a copper alloy, and a coating disposed on the surface of the core. The invention further relates to a process for the preparation of a Terminal wire and an assembly with a substrate and a Semiconductor chip.

Anschlussdrähte dienen dazu, einen Halbleiterchip mit einem Substrat oder einem Verdrahtungsträger zu verbinden. Diese Verbindung soll in der Regel auch eine elektrische Verbindung zwischen dem Halbleiterchip und auf dem Substrat/Verdrahtungsträger angeordneten Leiterbahnen darstellen. Deshalb werden als Anschlussdrähte elektrisch gut leitende Materialien wie Gold, eine Goldlegierung, Kupfer oder eine Kupferlegierung verwendet.leads serve to a semiconductor chip with a substrate or a Wiring carrier to connect. This connection should usually also an electrical connection between the semiconductor chip and conductor tracks arranged on the substrate / wiring carrier represent. Therefore, as connecting wires are electrically good conductive materials such as gold, a gold alloy, copper or used a copper alloy.

Zum Befestigen und Verbinden von Anschlussdrähten an einem Substrat bzw. einem Halbleiterchip werden Bondverfahren oder Lötverfahren eingesetzt.To the Attaching and connecting connecting wires to one Substrate or a semiconductor chip bonding method or soldering methods are used.

Als Bonden (genauer: Drahtbonden) wird in der Elektrotechnik eine Verbindungstechnik bezeichnet, bei der eine Verbindung zwischen einem Chip und einem Verdrahtungsträger mit Hilfe eines dünnen Drahtes (Anschlussdraht) durch Verschweißen des Drahts mit der Anschlussfläche erzeugt wird. Die Verschweißung kann beispielsweise mittels thermischer Aktivierung (Thermosonicbonden) oder mittels Ultraschall (Ultrasonicbonden) erfolgen, wobei der Vorteil des Ultraschall gestützten Drahtbondens darin besteht, dass eine Bondverbindung bei Raumtemperatur erzeugt werden kann. Hierdurch werden die elektronischen Elemente vor Überhitzung geschützt.When Bonding (more precisely: wire bonding) becomes a joining technique in electrical engineering in which a connection between a chip and a Wiring carrier with the help of a thin wire (Lead wire) by welding the wire to the Pad is generated. The welding can be achieved, for example, by thermal activation (thermosonic bonding) or by ultrasound (ultrasonic bonding), with the advantage the ultrasonic supported wire bonding is that a bond connection can be generated at room temperature. This will cause the electronic elements to overheat protected.

Löten ist ein thermisches Verfahren zum stoffschlüssigen Fügen von Werkstoffen, wobei eine flüssige Phase durch Schmelzen eines Lotes (Schmelzlöten) entsteht. Beim Löten wird die Solidustemperatur der Grundwerkstoffe nicht erreicht. Das Lotmaterial ist eine leicht schmelzbare Metalllegierung, mit dessen Hilfe eine metallische Verbindung von zwei metallischen Bauteilen erzeugt wird. An der Verbindungsstelle bildet das Lot mit den zu verbindenden Werkstoffen eine oder mehrere intermetallische Phasen aus, die eine feste Verbindung der miteinander zu verbindenden Materialien erzeugt.soldering is a thermal process for cohesive joining of materials, whereby a liquid phase by melting a solder (melt soldering) is created. When soldering the solidus temperature of the base materials is not reached. The solder material is an easily fusible metal alloy, with the help of a metallic connection of two metallic components is generated. At the junction the solder forms with the to be connected Materials one or more intermetallic phases, the one solid compound produced the materials to be joined together.

In DE 42 32 745 C2 wird ein Anschlussdraht beschrieben, der mittels Ultraschallbonden an einem Bauelement befestigt werden kann. Der bekannte Anschlussdraht weist einen Kern aus Gold oder Kupfer und eine auf diesem Kern aufgebrachte Beschichtung aus Aluminium oder Aluminiumoxid auf, wobei die Beschichtung eine mittlere Schichtdicke von 5 nm bis 100 nm hat. Der Anschlussdraht mit der bekannten Beschichtung ermöglicht eine sichere Bondverbindung bei Raumtemperatur, insbesondere beim Ultraschallbonden.In DE 42 32 745 C2 a connection wire is described, which can be attached by means of ultrasonic bonding to a component. The known connecting wire has a core made of gold or copper and a coating of aluminum or aluminum oxide applied to this core, the coating having an average layer thickness of 5 nm to 100 nm. The connecting wire with the known coating allows a secure bond at room temperature, in particular during ultrasonic bonding.

Vorteilhaft wäre für viele Anwendungen ein Anschlussdraht der gestattet, die miteinander zu verbindenden Elemente (beispielsweise Substrat und Halbleiterchip) sowohl mittels Ultraschall gestütztem Bonden als auch mittels einer Lötverbindung zu verbinden. Die aus der oben angegebenen Druckschrift bekannte Beschichtung ist jedoch für eine Lötverbindung nicht geeignet, da sich das an der äußeren Oberfläche der Aluminiumbeschichtung angeordnete Aluminiumdioxid für eine Lötverbindung nicht eignet.Advantageous would be a connection wire for many applications which allows the elements to be connected together (for example Substrate and semiconductor chip) by both ultrasonic supported bonding as well as to connect by means of a solder joint. The from the above-mentioned document known coating but not suitable for a solder joint, because that's on the outer surface the aluminum coating arranged aluminum dioxide for a solder joint is not suitable.

Die Aufgabe der vorliegenden Erfindung besteht demnach darin, einen Anschlussdraht zu schaffen, der einerseits eine hohe Sicherheit und Zuverlässigkeit beim Ultraschallbonden und andererseits eine zuverlässige Lötverbindung zur Erzielung einer hohen Packungsdichte ermöglicht. Hierbei soll eine sichere und zuverlässige Bondverbindung bei einer Temperatur unter 120°C oder sogar bei Raumtemperatur erreicht werden. Die Aufgabe im Hinblick auf das Verfahren besteht darin, ein einfaches und kostengünstiges Verfahren anzugeben, um einen derartigen Anschlussdraht herzustellen, wobei eine große Stückzahl von derartigen Anschlussdrähten in kurzer Zeit hergestellt werden soll. Im Hinblick auf die Baugruppe besteht die Aufgabe darin, eine Baugruppe mit einer sicheren Verbindung zwischen Halbleiterchip und Substrat herzustellen.The The object of the present invention is therefore to provide a Connecting wire to create, on the one hand a high level of security and reliability in ultrasonic bonding and on the other hand a reliable solder joint to achieve a high packing density allows. Here is a Safe and reliable bond at a temperature below 120 ° C or even at room temperature. The task with regard to the method is to do a simple and cost-effective method to specify such Connecting wire, with a large number of pieces made of such leads in a short time shall be. With regard to the assembly, the object is an assembly with a secure connection between the semiconductor chip and substrate.

Die obige Aufgabe wird durch ein Anschlussdraht mit einem Nano-Oberflächenfinish gelöst, der in Längsrichtung des Anschlussdrahts eine lötfähige Beschichtung und auf der gegenüber liegenden Seite eine bondfähige Beschichtung aufweist.The above task is through a connecting wire with a nano-surface finish solved in the longitudinal direction of the connecting wire a solderable coating and on the opposite lying side has a bondable coating.

Ein derartiger Anschlussdraht ermöglicht die gewünschte sichere und zuverlässige Bondverbindung auf der einen Seite und auf der anderen Seite gleichzeitig die Herstellung einer Lötverbindung. Hierbei ist die Bondverbindung so zuverlässig, dass die Substrate/Verdrahtungsträger unterhalb einer Temperatur von 120°C oder sogar bei Raumtemperatur sicher gebondet werden können. Dies bedeutet, dass auch temperaturempfindliche Substrate mit dem erfindungsgemäßen Anschlussdraht gebondet werden können. Außer Siliziumhalbleiter können zudem III/V-Halbleiter gebondet werden. Das Bonden bei Raumtemperatur hat neben der wegfallenden Überhitzung ggf. einzelner temperaturempfindlicher Komponenten natürlich noch den Vorteil, dass man ggf. großvolumige und damit schwer zu erwärmende Bauteile nicht heizen muß und dadurch Fertigungszeit einspart. Außerdem können günstigere HF- und Mikrowelleneigenschaften der mit den erfindungsgemäßen Anschlussdrähten verbundenen Bauelemente realisiert werden.Such a connection wire allows the desired secure and reliable bond on one side and on the other side at the same time the production of a solder joint. Here, the bond is so reliable that the substrates / wiring substrates can be securely bonded below a temperature of 120 ° C or even at room temperature. This means that even temperature-sensitive substrates can be bonded with the connecting wire according to the invention. In addition to silicon semiconductors, III / V semiconductors can also be bonded. The bonding at room temperature, of course, in addition to the omitted overheating possibly individual temperature-sensitive components, of course, the advantage that you may have large-volume and thus difficult to heat components does not need to heat and thereby saves manufacturing time. In addition, cheaper HF and Microwave properties of connected to the connecting wires according to the invention components can be realized.

In einem bevorzugten Ausführungsbeispiel weist der Anschlussdraht einen nicht kreisförmigen Querschnitt, vorzugsweise einen elliptischen oder einen im Wesentlichen rechteckförmigen Querschnitt auf. Diese Gestaltung ermöglicht eine einfache Herstellung und leichtere Handhabung der Anschlussdrähte beim Bonden bzw. Löten.In In a preferred embodiment, the lead wire a non-circular cross-section, preferably one elliptical or a substantially rectangular Cross-section on. This design allows for easy Production and easier handling of the connecting wires during bonding or soldering.

Ebenfalls einfacher lässt sich ein Anschlussdraht bei der Herstellung der Verbindung handhaben, wenn die lötfähige Beschichtung auf der ersten flachen Seite des Anschlussdrahts und die bondfähige Beschichtung auf der zweiten flachen Seite des Anschlussdrahts angeordnet ist, wobei vorzugsweise die zweite flache Seite der ersten flachen Seite gegenüber liegt.Also a connecting wire can be easier to manufacture handle the compound when the solderable coating on the first flat side of the lead wire and the bondable coating is arranged on the second flat side of the connecting wire, preferably the second flat side of the first flat side is opposite.

Besonders bevorzugt enthält die lötfähige Schicht mindestens eines der Elemente aus der Gruppe Gold, Silber, Palladium, Platin und/oder eine Palladium-Legierung oder Platin-Legierung. Besonders bevorzugt besteht die lötfähige Beschichtung überwiegend oder vollständig aus mindestens einem der genannten Elemente und/oder einer Palladium-Legierung oder Platin-Legierung.Especially Preferably, the solderable layer contains at least one of the elements from the group gold, silver, palladium, Platinum and / or a palladium alloy or platinum alloy. Particularly preferably, the solderable coating is predominantly or completely of at least one of said elements and / or a palladium alloy or platinum alloy.

Vorzugsweise ist zwischen dem Kernmaterial und der lötfähigen Schicht eine Zwischenschicht als Diffusionsbarriere vorgesehen ist, welche vorzugsweise eines oder mehrere Elemente aus der Gruppe Titan, Kobalt, Nickel, Chrom, Wolfram, Molybdän enthält. Die Diffusionsbarriere verhindert eine unerwünschte Diffusion des Kernmaterials zur Lötstelle.Preferably is between the core material and the solderable one Layer an intermediate layer is provided as a diffusion barrier, which preferably one or more elements from the group titanium, Cobalt, nickel, chromium, tungsten, molybdenum. The diffusion barrier prevents unwanted diffusion of the core material to the solder joint.

In einem besonders bevorzugten Ausführungsbeispiel weist der Anschlussdraht, falls die lötfähigen Schicht überwiegend aus Palladium oder einer Palladium-Legierung besteht, auf der dem Kern abgewandten Seite dieser Schicht eine Deckschicht mit einem oder mehreren der Elementen der Gruppe Silber oder Gold auf, wobei vorzugsweise im Übergangsbereich zwischen der Deckschicht und der lötfähigen Schicht überwiegend aus Palladium oder einer Palladiumlegierung eine intermetallischen Phase ausgebildet ist. Die Deckschicht wirkt sich günstig auf die Lötbarkeit des Anschlussdrahts aus. Die Deckschicht weist bevorzugt eine Schichtdicke zwischen (einschließlich) etwa 2,5 nm und 50 nm auf.In a particularly preferred embodiment, the Connecting wire, if the solderable layer predominantly consists of palladium or a palladium alloy on which the Core facing away from this layer, a cover layer with a or more of the elements of the group silver or gold, wherein preferably in the transition region between the cover layer and the solderable layer predominantly from palladium or a palladium alloy an intermetallic Phase is formed. The cover layer has a favorable effect on the solderability of the connecting wire. The cover layer preferably has a layer thickness between (inclusive) about 2.5 nm and 50 nm.

Im Hinblick auf die Löteigenschaften werden besonders gut Ergebnisse erzielt, wenn die lötfähige Schicht des Anschlussdrahts eine Schichtdicke von mindestens etwa 2,5 nm und höchstens etwa 150 nm, vorzugsweise zwischen (einschließlich) etwa 40 nm und 80 nm, aufweist.in the In view of the soldering properties become particularly good Results achieved when the solderable layer of the connecting wire has a layer thickness of at least about 2.5 nm and at most about 150 nm, preferably between (inclusive) about 40 nm and 80 nm.

Die bondfähige Schicht des erfindungsgemäßen Anschlussdrahts weist im Bereich ihrer Oberfläche und einer dünnen Schicht direkt unter der Oberfläche Aluminiumdioxid auf, wobei das Aluminiumoxid an der Oberfläche der bondfähigen Schicht vorzugsweise dadurch erzeugt wird, dass die bondfähige Schicht in ihrer Matrix Aluminium enthält, das an der Oberfläche an Luft Aluminiumoxid ausbildet (Al2O3) (so genannte Passivierungsschicht). Das Aluminiumoxid an der Oberfläche bildet in vorteilhafter Weise eine dichte Schicht, die wie Schmirgelpapier wirkt und hierdurch eine feste Bondverbindung mit dem Bondpartner erzeugt.The bondable layer of the connecting wire according to the invention has in the region of its surface and a thin layer directly below the surface of aluminum dioxide, wherein the aluminum oxide is preferably formed on the surface of the bondable layer, characterized in that the bondable layer contains in its matrix aluminum, which at the surface Alumina forms in air (Al 2 O 3 ) (so-called passivation layer). The aluminum oxide on the surface advantageously forms a dense layer which acts like emery paper and thereby produces a firm bond with the bonding partner.

Bondverbindungen mit einer besonders großen Zuverlässigkeit werden erzeugt, wenn die Schichtdicke der bondfähigen Schicht zwischen (einschließlich) etwa 7 nm und 70 nm, vorzugsweise im Bereich zwischen (einschließlich) etwa 20 nm und 40 nm liegt.bonds with a particularly high reliability generated when the layer thickness of the bondable layer between (inclusive) about 7 nm and 70 nm, preferably in the range between (inclusive) about 20 nm and 40 nm lies.

Die obige Aufgabe wird außerdem durch eine Baugruppe mit einem Substrat oder Verdrahtungsträger und einem Halbleiterchip gelöst, wobei der Halbleiterchip mit dem Sub strat oder Verdrahtungsträger mittels eines erfindungsgemäßen Anschlussdrahts verbunden ist. Eine derartige Baugruppe weist günstige HF- und Mikrowelleneigenschaften auf. Ferner ist die Strombelastbarkeit der erfindungsgemäßen Anschlussdrähte, die mit der Baugruppe verbunden sind, hoch.The The above object is also achieved by an assembly with a Substrate or wiring substrate and a semiconductor chip solved, wherein the semiconductor chip with the sub strat or Wiring carrier by means of an inventive Connecting wire is connected. Such an assembly has favorable RF and microwave properties. Furthermore, the current carrying capacity the connecting wires according to the invention, which are connected to the module, high.

Im Hinblick auf das Verfahren zur Herstellung eines erfindungsgemäßen Anschlussdrahts wird die Aufgabe durch ein Verfahren mit den folgenden Schritten gelöst:

  • – Abziehen des Kernmaterials von der Rolle in Form eines Drahtes,
  • – Vorbeiführen des Drahts an einer ersten Beschichtungsquelle einer Beschichtungseinrichtung zur Erzeugung der bondfähigen Schicht und
  • – Vorbeiführen des Drahts an einer zweiten Beschichtungsquelle der Beschichtungseinrichtung zur Erzeugung der lötfähigen Schicht.
With regard to the method for producing a connecting wire according to the invention, the object is achieved by a method having the following steps:
  • Peeling off the core material from the roll in the form of a wire,
  • Passing the wire past a first coating source of a coating device to produce the bondable layer and
  • Passing the wire past a second coating source of the coating device to produce the solderable layer.

Ein derartiges Verfahren ist einfach und kostengünstig, ermöglicht die Herstellung einer großen Meterzahl von Anschlussdrähten in einer kurzen Zeit und kann leicht an die Parameter der Beschichtung angepasst werden (z. B. Beschichtungsdauer korreliert mit der gewünschten Schichtdicke der löt- oder bondfähigen Beschichtung).One Such method is simple and inexpensive, allows the production of a large number of connecting wires in a short time and can be easily adapted to the parameters of the coating (For example, coating time correlates with the desired Layer thickness of the solderable or bondable coating).

Besonders bevorzugt wird als die Beschichtungseinrichtung eine CVD- oder eine PVD-Einrichtung eingesetzt.Especially preferred as the coating device is a CVD or a PVD device used.

Falls in einem bevorzugten Ausführungsbeispiel des erfindungsgemäßen Verfahrens nach der Beschichtung eine veränderte Härte des Anschlussbändchens erreicht werden soll, kann zur Härtebehandlung vorzugsweise nach der Beschichtung des Drahts mit der zweiten Beschichtungsquelle ein Temperschritt durchgeführt werden.If in a preferred embodiment of the method according to the invention after the coating, a changed hardness of the connection is to be achieved, it is possible to carry out a tempering step for hardening treatment, preferably after the coating of the wire with the second coating source.

Weitere Ziele, Merkmale, Vorteile und Anwendungsmöglichkeiten der Erfindung ergeben sich aus der nachfolgenden Beschreibung von Ausführungsbeispielen eines erfindungsgemäßen Anschlussdrahts, einer erfindungsgemäßen Baugruppe und eines erfindungsgemäßen Verfahrens zur Herstellung eines Anschlussdrahts anhand der Figuren. Dabei bilden alle beschriebenen und/oder bildlich dargestellten Merkmale für sich oder in beliebiger Kombination den Gegenstand der vorliegenden Erfindung, unabhängig von ihrer Zusammenfassung in den einzelnen Ansprüchen oder deren Rückbeziehungen.Further Objectives, characteristics, advantages and applications of the Invention will become apparent from the following description of exemplary embodiments a connection wire according to the invention, a inventive assembly and an inventive Method for producing a connecting wire with reference to the figures. there form all described and / or illustrated features by itself or in any combination the object of the present invention, regardless of their summary in the individual claims or their relations.

Es zeigen schematisch:It show schematically:

1 eine Seitenansicht eines ersten Ausführungsbeispiels eines erfindungsgemäßen Anschlussdrahts, 1 a side view of a first embodiment of a connecting wire according to the invention,

2 eine Ansicht der Stirnseite des erfindungsgemäßen Anschlussdrahts gemäß 1, 2 a view of the front side of the connecting wire according to the invention according to 1 .

3 ein zweites Ausführungsbeispiel eines erfindungsgemäßen Anschlussdrahts in einer Ansicht von der Seite, 3 A second embodiment of a connecting wire according to the invention in a view from the side,

4 ein drittes Ausführungsbeispiel eines erfindungsgemäßen Anschlussdrahts in einer Ansicht von der Seite, 4 A third embodiment of a connecting wire according to the invention in a view from the side,

5 eine Seitenansicht einer erfindungsgemäßen Baugruppe und 5 a side view of an assembly according to the invention and

6 eine Vorrichtung zur Herstellung eines erfindungsgemäßen Anschlussdrahts gemäß 3 in einer Ansicht von der Seite. 6 a device for producing a connecting wire according to the invention according to 3 in a view from the side.

Das in 1 dargestellte Ausführungsbeispiel eines erfindungsgemäßen Anschlussdrahts 5 weist einen Kern 10 bestehend zumindest überwiegend aus Gold und/oder einer Goldlegierung und/oder Kupfer und/oder einer Kupferlegierung auf. Der Kern 10 des Anschlussdrahts 5 hat eine im Wesentlichen lang gestreckte, bändchenartige Form. Die längste Ausdehnung des Anschlussdrahts ist in der in 1 dargestellten Seitenansicht erkennbar (Längsrichtung markiert mit Doppelpfeil L).This in 1 illustrated embodiment of a connecting wire according to the invention 5 has a core 10 consisting at least predominantly of gold and / or a gold alloy and / or copper and / or a copper alloy. The core 10 of the connecting wire 5 has a substantially elongated, ribbon-like shape. The longest extension of the connecting wire is in the in 1 shown side view recognizable (longitudinal direction marked with double arrow L).

2 zeigt die Ansicht der Stirnseite des Anschlussdrahts 5 und somit auch den Querschnitt des Kerns 10. Der Kern 10 weist einen im Wesentlichen rechteckigen Querschnitt mit abgerundeten Ecken auf. Weitere Querschnittsformen, wie eine Ellipsenform, eine Kreisform oder dergleichen sind ebenfalls denkbar. 2 shows the view of the front side of the connection wire 5 and thus also the cross section of the core 10 , The core 10 has a substantially rectangular cross section with rounded corners. Other cross-sectional shapes, such as an ellipse shape, a circular shape or the like are also conceivable.

Auf einer Seite weist der Anschlussdraht 5 eine lötfähige Beschichtung 14 auf, welche an der Unterseite des Anschlussdrahts 5 angeordnet ist. Auf der gegenüberliegenden Seite ist an der Oberseite des Anschlussdrahts eine bondfähige Beschichtung 12 angeordnet.On one side, the connection wire points 5 a solderable coating 14 on which at the bottom of the connecting wire 5 is arranged. On the opposite side is at the top of the lead wire, a bondable coating 12 arranged.

Die Anordnung der lötfähigen Beschichtung 14 und der bondfähigen Beschichtung 12 ist in der Ansicht der Stirnseite des Anschlussdrahts 5, die in 2 gezeigt ist, erkennbar. Die bondfähige Beschichtung 12 und die lötfähige Beschichtung 14 sind auf verschiedenen, einander gegenüber liegenden Seiten (Flachseiten) des Kerns 10 bezogen auf den Querschnitt angeordnet. Die Flachseiten sind hierbei die sich gegenüber liegenden Seiten des Querschnitts, welche die größte Längsausdehnung (Breite B, gekennzeichnet durch Doppelpfeil) aufweisen.The arrangement of the solderable coating 14 and the bondable coating 12 is in view of the front side of the connection wire 5 , in the 2 is shown, recognizable. The bondable coating 12 and the solderable coating 14 are on different, opposite sides (flat sides) of the core 10 arranged on the cross section. The flat sides here are the opposite sides of the cross section, which have the largest longitudinal extent (width B, marked by double arrow).

Die lötfähige Beschichtung 14 und die bondfähige Beschichtung 12 weisen die oben beschriebene Zusammensetzung auf.The solderable coating 14 and the bondable coating 12 have the composition described above.

Die lötfähige Beschichtung 14 weist eine Schichtdicke d14 von mindestens etwa 2,5 nm und höchstens etwa 150 nm, vorzugsweise zwischen (einschließlich) etwa 40 nm und 80 nm auf. Hierbei wird im Folgenden die Schichtdicke als die Ausdehnung der jeweiligen Schicht in eine Richtung bezeichnet, die senkrecht zu den Richtungen B und L verläuft.The solderable coating 14 has a layer thickness d14 of at least about 2.5 nm and at most about 150 nm, preferably between (inclusive) about 40 nm and 80 nm. Hereinafter, the layer thickness will be referred to as the extent of the respective layer in a direction which is perpendicular to the directions B and L.

Die Schichtdicke d12 der bondfähigen Bechichtung 12 liegt etwa zwischen (einschließlich) 7 nm und 70 nm, vorzugsweise im Bereich zwischen (einschließlich) etwa 20 nm und 40 nm. Vorzugsweise sind sowohl die lötfähige Beschichtung, als auch die bondfähige Beschichtung, über die Gesamtlänge L angeordnet, was die Herstellung in einem von Rolle zu Rolle Verfahren ermöglicht bzw. erleichtert.The layer thickness d12 of the bondable coating 12 is about between (inclusive) 7 nm and 70 nm, preferably in the range between (inclusive) about 20 nm and 40 nm. Preferably, both the solderable coating, as well as the bondable coating, arranged over the total length L, which is the production in one from roll to roll.

In dem anhand von 3 dargestellten Ausführungsbeispiel ist ein Anschlussdraht 5' dargestellt, bei dem die lötfähige Beschichtung 14 von dem Kern 10 durch eine Zwischenschicht 15 getrennt ist. Die Zwischenschicht 15 weist eines oder mehrere Elemente aus der Gruppe Titan, Kobalt, Nickel, Chrom, Wolfram, Molybdän auf und bildet eine Diffusionsbarriere. Vorzugsweise besteht die Zwischenschicht 15 überwiegend aus einem oder mehreren der genannten Elemente. Der bevorzugte Bereich der Schichtdicke der Diffusionsbarriere d15 beträgt 10 nm bis 60 nm.In the basis of 3 illustrated embodiment is a connection wire 5 ' shown in which the solderable coating 14 from the core 10 through an intermediate layer 15 is disconnected. The intermediate layer 15 has one or more elements from the group titanium, cobalt, nickel, chromium, tungsten, molybdenum and forms a diffusion barrier. Preferably, the intermediate layer 15 predominantly of one or more of said elements. The preferred range of the layer thickness of the diffusion barrier d15 is 10 nm to 60 nm.

In einem weiteren, anhand von 4 dargestellten Ausführungsbeispiel weist die lötfähige Beschichtung 14, die in diesem Fall Palladium oder eine Palladiumlegierung enthält, an ihrer dem Kern 10 abgewandten Oberseite eine im Bereich zwischen etwa 2,5 nm und 50 nm dicke (Schichtdicke d16) Deckschicht 16 auf, die vorzugsweise Silber und/oder Gold enthält. In einem besonders bevorzugten Ausführungsbeispiel besteht die Deck schicht 16 überwiegend aus Silber und/oder Gold. Vorzugsweise bildet die Deckschicht 16 mit der darunter liegenden Palladium- oder Palladiumlegierungsschicht 14 im Grenzbereich zwischen den beiden Schichten 14, 16 eine intermetallische Phase aus.In another, based on 4 illustrated embodiment has the solderable coating 14 , which in this case contains palladium or a palladium alloy, at its core 10 from turned top one in the range between about 2.5 nm and 50 nm thick (layer thickness d16) cover layer 16 which preferably contains silver and / or gold. In a particularly preferred embodiment, the cover layer 16 predominantly of silver and / or gold. Preferably, the cover layer forms 16 with the underlying palladium or palladium alloy layer 14 in the border area between the two layers 14 . 16 an intermetallic phase.

Alternativ zu den in den 3 und 4 dargestellten Ausführungsbeispielen können bei einem erfindungsgemäßen Anschlussdraht sowohl eine Zwischenschicht 15 als auch eine Deckschicht 16 benachbart zu der lötfähigen Beschichtung 14 vorgesehen sein.Alternatively to the in the 3 and 4 Embodiments shown in an inventive connecting wire both an intermediate layer 15 as well as a cover layer 16 adjacent to the solderable coating 14 be provided.

In 5 ist eine erfindungsgemäße Baugruppe dargestellt, welche ein Substrat (oder einen Verdrahtungsträger) 20 sowie einen Halbleiterchip 30 aufweist. Das Substrat (oder der Verdrahtungsträger) 20 ist über das Lot und die lötfähige Beschichtung 14 mit dem Kern 10 jeweils eines Anschlussdrahts 5 verbunden. Der Kern 10 ist seinerseits über die bondfähige Beschichtung 12 mit dem Halbleiterchip 30 verbunden. Auf diese Weise wird sowohl eine mechanische als auch eine elektrische Verbindung zwischen dem Halbleiterchip 30 und dem Substrat (oder Verdrahtungsträger) 20 realisiert. Die Verbindung der bondfähige Beschichtung 12 mit dem Halbleiterchip 30 ist vorzugsweise mittels Ultraschallbonden hergestellt.In 5 an assembly according to the invention is shown which comprises a substrate (or a wiring carrier) 20 and a semiconductor chip 30 having. The substrate (or the wiring carrier) 20 is about the solder and the solderable coating 14 with the core 10 each of a connecting wire 5 connected. The core 10 is in turn on the bondable coating 12 with the semiconductor chip 30 connected. In this way, both a mechanical and an electrical connection between the semiconductor chip 30 and the substrate (or wiring carrier) 20 realized. The compound of the bondable coating 12 with the semiconductor chip 30 is preferably produced by means of ultrasonic bonding.

In einem weiteren, nicht dargestellten Ausführungsbeispiel kann die lötfähige Beschichtung 14 mit dem Halbleiterchip 30 und die bondfähige Beschichtung 12 eines jeden Anschlussdrahts 5 mit dem Substrat (oder Verdrahtungsträger) verbunden sein. Analog zu dem in den 1 und 2 dargestellten Anschlussdraht 5 kann auch der in 3 oder der in 4 dargestellte Anschlussdraht 5', 5'' zur Verbindung von Halbleiterchip 30 und Substrat (oder Verdrahtungsträger) 20 dienen. In einem weiteren Ausführungsbeispiel können verschiedene Anschlussdraht-Typen für eine Baugruppe je nach den Eigenschaften der jeweiligen Anschlüsse und angeschlossenen elektronischen Komponenten in einer Baugruppe miteinander kombiniert werden. Die erfindungsgemäße Baugruppe kann auch in einem Array angeordnet sein.In a further, not shown embodiment, the solderable coating 14 with the semiconductor chip 30 and the bondable coating 12 of each connecting wire 5 be connected to the substrate (or wiring carrier). Analogous to that in the 1 and 2 illustrated connection wire 5 can also be in 3 or the in 4 illustrated connection wire 5 ' . 5 '' for connecting semiconductor chip 30 and substrate (or wiring carrier) 20 serve. In a further embodiment, different types of leads for a package may be combined with one another depending on the characteristics of the respective terminals and connected electronic components. The assembly according to the invention can also be arranged in an array.

6 zeigt das erfindungsgemäße Herstellungsverfahren in einer Ansicht von der Seite. Das Material des Kerns 10 wird von einer ersten Rolle 101 abgezogen und nach der Beschichtung auf einer zweiten Rolle 102 aufgewickelt (Laufrichtung markiert durch Pfeil P). Zwischen der ersten Rolle 101 und der zweiten Rolle 102 passiert das Kernmaterial 10 eine Beschichtungseinrichtung 100, die vorzugsweise eine Vakuumeinrichtung mit einem moderaten Vakuum beispielsweise im Bereich von 10–3 Torr (entspricht 1,333 × 10–1 Pa) darstellt. In der Beschichtungseinrichtung 100 passiert das Kernmaterial 10 verschiedene Sputterquellen. Eine erste Sputterquelle 112 bringt die bondfähige Beschichtung 12, beispielsweise in Form von Aluminium, auf das Kernmaterial 10 auf. Anschließend passiert das Kernmaterial 10 eine zweite Sputterquelle 114 zum Aufbringen des lötfähigen Materials. Soll zwischen der lötfähigen Beschichtung und dem Kernmaterial beispielsweise noch eine Diffusionsbarriere angeordnet sein, so ist zwischen der ersten Sputterquelle 112 und der zweiten Sputterquelle 114 eine dritte Sputterquelle 115 angeordnet, welche die Zwischenschicht 15 erzeugt. Diese Sputterquelle 115 ist auf der gleichen Seite des durchlaufenden Drahtkernmaterials 10 wie die zweite Sputterquelle 114 angeordnet. Die Beschichtungseinrichtung 100 ist vorzugsweise als eine CVD- oder als eine PVD-Einrichtung ausgebildet. 6 shows the manufacturing method according to the invention in a view from the side. The material of the core 10 is from a first role 101 peeled off and after coating on a second roll 102 wound up (direction marked by arrow P). Between the first roll 101 and the second role 102 happens the nuclear material 10 a coating device 100 , which preferably represents a vacuum device with a moderate vacuum, for example in the range of 10 -3 Torr (corresponding to 1.333 × 10 -1 Pa). In the coating device 100 happens the nuclear material 10 different sputtering sources. A first sputter source 112 brings the bondable coating 12 For example, in the form of aluminum, on the core material 10 on. Then the nuclear material happens 10 a second sputtering source 114 for applying the solderable material. If, for example, a diffusion barrier is to be arranged between the solderable coating and the core material, then there is between the first sputtering source 112 and the second sputtering source 114 a third sputter source 115 arranged, which the intermediate layer 15 generated. This sputtering source 115 is on the same side of the continuous wire core material 10 like the second sputter source 114 arranged. The coating device 100 is preferably formed as a CVD or as a PVD device.

In einem weiteren Ausführungsbeispiel kann alternativ zu der Sputterquelle 115 die Sputterquelle in der Beschichtungseinrichtung 100 vorgesehen werden, welche die Deckschicht 16 erzeugt. Diese Sputterquelle muss allerdings in Laufrichtung P des Kernmaterials von Rolle 101 zu Rolle 102 hinter der zweiten Sputterquelle 114 angeordnet sein.In a further embodiment, as an alternative to the sputtering source 115 the sputter source in the coating device 100 be provided, which is the topcoat 16 generated. However, this sputter source must be in the direction P of the core material of role 101 to role 102 behind the second sputter source 114 be arranged.

Hinter der Beschichtungseinrichtung 100 in Laufrichtung P kann vor dem Aufrollen des beschichteten Kernmaterials des Anschlussdrahts auf die zweite Rolle 102 eine Tempereinrichtung angeordnet sein, die zur Durchführung eines Temperschritts nach der Beschichtung des Drahts dient. Ein derartiger Temperschritt dient zur Härtebehandlung des Anschlussdrahts.Behind the coating device 100 in the direction P can before rolling the coated core material of the connecting wire on the second roll 102 a tempering device may be arranged which serves to carry out a tempering step after the coating of the wire. Such an annealing step serves for hardening treatment of the connecting wire.

Die Beschichtungen des Anschlussdrahts mit der bondfähigen Beschichtung auf der einen Seite und der lötfähigen Beschichtung auf der anderen Seite des Anschlussdrahts bilden ein Nano-Oberflächenfinish, das vor allem bei flacher Geometrie, d. h. flachem Querschnitt gute Hochfrequenz- und Mikrowelleneigenschaften besitzt. Bei einem größeren Querschnitt wird eine größere Strombelastbarkeit jedes Anschlussdrahts erreicht.The Coatings of the lead wire with the bondable Coating on one side and solderable Coating on the other side of the connecting wire form Nano-surface finish, especially in flat geometry, d. H. flat cross section good high frequency and microwave properties has. For a larger cross section is a greater current carrying capacity of each connecting wire reached.

Die erfindungsgemäßen Anschlussdrähte sind sowohl mittels Ultraschall bei Temperaturen kleiner als 120°C oder sogar bei Raumtemperatur bondbar bzw. lötbar.The connecting wires according to the invention are both by means of ultrasound at temperatures less than 120 ° C. or even bondable or solderable at room temperature.

55
AnschlussdrahtLead wire
5', 5''5 ' 5 ''
AnschlussdrahtLead wire
1010
Kern des Anschlussdrahts 5, 5', 5'' Core of the connecting wire 5 . 5 ' . 5 ''
1212
bondfähige Beschichtungbondable coating
1414
lötfähige Beschichtungsolderable coating
1515
Zwischenschichtinterlayer
1616
Deckschichttopcoat
2020
Substrat oder Verdrahtungsträgersubstratum or wiring carrier
3030
HalbleiterchipSemiconductor chip
100100
Beschichtungseinrichtungcoater
101101
erste Rollefirst role
102102
zweite Rollesecond role
112112
erste Sputterquellefirst sputtering
114114
zweite Sputterquellesecond sputtering
115115
dritte Sputterquellethird sputtering
PP
Doppelpfeil zur Markierung der Längsrichtung des Anschlussdrahts 5 Double arrow to mark the longitudinal direction of the connecting wire 5
BB
Doppelpfeil zur Markierung der Querrichtung des Anschlussdrahts 5, Richtung des Querschnitts des Anschlussdrahts 5 mit größter Längsausdehnung bezogen auf den QuerschnittDouble arrow to mark the transverse direction of the connecting wire 5 , Direction of the cross section of the connecting wire 5 with greatest longitudinal expansion relative to the cross section
PP
Laufrichtung des Kernmaterials 10 von der Rolle 101 zur Rolle 102 Running direction of the core material 10 from the role 101 to the role 102

ZITATE ENTHALTEN IN DER BESCHREIBUNGQUOTES INCLUDE IN THE DESCRIPTION

Diese Liste der vom Anmelder aufgeführten Dokumente wurde automatisiert erzeugt und ist ausschließlich zur besseren Information des Lesers aufgenommen. Die Liste ist nicht Bestandteil der deutschen Patent- bzw. Gebrauchsmusteranmeldung. Das DPMA übernimmt keinerlei Haftung für etwaige Fehler oder Auslassungen.This list The documents listed by the applicant have been automated generated and is solely for better information recorded by the reader. The list is not part of the German Patent or utility model application. The DPMA takes over no liability for any errors or omissions.

Zitierte PatentliteraturCited patent literature

  • - DE 4232745 C2 [0006] - DE 4232745 C2 [0006]

Claims (14)

Anschlussdraht (5, 5', 5''), vorzugsweise in Form eines Bändchens, mit einem elektrisch gut leitenden Drahtkern (10), vorzugsweise bestehend zumindest überwiegend aus Gold und/oder einer Goldlegierung und/oder Kupfer und/oder einer Kupferlegierung, und einer auf der Oberfläche des Kerns angeordneten Beschichtung, dadurch gekennzeichnet, dass der Anschlussdraht auf einer Seite eine lötfähige Beschichtung (14) und auf der gegenüberliegenden Seite eine bondfähige Beschichtung (12) aufweist.Connecting wire ( 5 . 5 ' . 5 '' ), preferably in the form of a ribbon, with a highly electrically conductive wire core ( 10 ), preferably consisting at least predominantly of gold and / or a gold alloy and / or copper and / or a copper alloy, and a coating arranged on the surface of the core, characterized in that the connecting wire has on one side a solderable coating ( 14 ) and on the opposite side a bondable coating ( 12 ) having. Anschlussdraht nach Anspruch 1, dadurch gekennzeichnet, dass der Anschlussdraht einen nicht kreisförmigen Querschnitt, vorzugsweise einen elliptischen oder näherungsweise elliptischen oder einen im Wesentlichen rechteckförmigen Querschnitt aufweist.Connecting wire according to claim 1, characterized the connecting wire has a non-circular cross-section, preferably an elliptical or approximately elliptical or a substantially rectangular cross-section having. Anschlussdraht nach einem der vorhergehenden Ansprüche, dadurch gekennzeichnet, dass die lötfähige Beschichtung (14) auf der ersten flachen Seite des Anschlussdrahts und die bondfähige Beschichtung (12) auf der zweiten flachen Seite des Anschlussdrahts angeordnet ist, wobei vorzugsweise die zweite flache Seite der ersten flachen Seite gegenüber liegt.Connecting wire according to one of the preceding claims, characterized in that the solderable coating ( 14 ) on the first flat side of the lead wire and the bondable coating ( 12 ) is disposed on the second flat side of the lead wire, preferably with the second flat side facing the first flat side. Anschlussdraht nach einem der vorhergehenden Ansprüche, dadurch gekennzeichnet, dass die lötfähige Schicht (14) mindestens eines der Elemente aus der Gruppe Gold, Silber, Palladium, Platin und/oder eine Palladium-Legierung oder Platin-Legierung enthält.Connecting wire according to one of the preceding claims, characterized in that the solderable layer ( 14 ) contains at least one of the elements from the group gold, silver, palladium, platinum and / or a palladium alloy or platinum alloy. Anschlussdraht nach Anspruch 4, dadurch gekennzeichnet, dass zwischen dem Kern und der lötfähigen Schicht (14) eine Zwischenschicht (15) als Diffusionsbarriere vorgesehen ist, welche vorzugsweise eines oder mehrere Elemente aus der Gruppe Titan, Kobalt, Nickel, Chrom, Wolfram, Molybdän enthält.Connecting wire according to claim 4, characterized in that between the core and the solderable layer ( 14 ) an intermediate layer ( 15 ) is provided as a diffusion barrier, which preferably contains one or more elements from the group titanium, cobalt, nickel, chromium, tungsten, molybdenum. Anschlussdraht nach Anspruch 4 oder 5, dadurch gekennzeichnet dass, falls die lötfähigen Schicht (14) überwiegend aus Palladium oder einer Palladium-Legierung besteht, auf der dem Kern (10) abgewandten Seite dieser Schicht eine Deckschicht (16) mit einem oder mehreren der Elemente Silber oder Gold angeordnet ist, wobei vorzugsweise im Übergangsbereich zwischen der Deckschicht (16) und der lötfähigen Schicht (14) überwiegend aus Palladium oder einer Palladiumlegierung eine intermetallischen Phase ausgebildet ist.Connecting wire according to claim 4 or 5, characterized in that, if the solderable layer ( 14 ) consists mainly of palladium or a palladium alloy on which the core ( 10 ) facing away from this layer, a cover layer ( 16 ) is arranged with one or more of the elements silver or gold, wherein preferably in the transition region between the cover layer ( 16 ) and the solderable layer ( 14 ) is formed predominantly of palladium or a palladium alloy an intermetallic phase. Anschlussdraht nach Anspruch 6, dadurch gekennzeichnet, dass die Deckschicht (16) eine Schichtdicke (d16) zwischen 2,5 nm und 50 nm aufweist.Connecting wire according to claim 6, characterized in that the cover layer ( 16 ) has a layer thickness (d16) between 2.5 nm and 50 nm. Anschlussdraht nach einem der vorhergehenden Ansprüche, dadurch gekennzeichnet, dass die lötfähige Schicht (14) eine Schichtdicke (d14) von mindestens etwa 2,5 nm und höchstens etwa 150 nm, vorzugsweise zwischen etwa 40 nm und 80 nm aufweist.Connecting wire according to one of the preceding claims, characterized in that the solderable layer ( 14 ) has a layer thickness (d14) of at least about 2.5 nm and at most about 150 nm, preferably between about 40 nm and 80 nm. Anschlussdraht nach einem der vorhergehenden Ansprüche, dadurch gekennzeichnet, dass die bondfähige Schicht (12) im Bereich ihrer Oberfläche und einer dünnen Schicht direkt unter der Oberfläche Aluminiumoxid (Al2O3) aufweist, wobei die bondfähige Schicht vorzugsweise Aluminium enthält und an ihrer Oberfläche Aluminiumoxid (AL2O3) ausbildet.Connecting wire according to one of the preceding claims, characterized in that the bondable layer ( 12 ) in the region of its surface and a thin layer directly below the surface of alumina (Al 2 O 3 ), wherein the bondable layer preferably contains aluminum and on its surface alumina (AL 2 O 3 ) is formed. Anschlussdraht nach einem der vorhergehenden Ansprüche, dadurch gekennzeichnet, dass die Schichtdicke (d12) der bondfähigen Schicht (12) zwischen etwa 7 nm und 70 nm, vorzugsweise im Bereich zwischen etwa 20 nm und 40 nm liegt.Connecting wire according to one of the preceding claims, characterized in that the layer thickness (d12) of the bondable layer ( 12 ) is between about 7 nm and 70 nm, preferably in the range between about 20 nm and 40 nm. Baugruppe mit einem Substrat oder Verdrahtungsträger (20) und einem Halbleiterchip (30), wobei der Halbleiterchip mit dem Substrat oder Verdrahtungsträger mittels eines Anschlussdrahts (5, 5', 5'') nach einem der vorhergehenden Ansprüche verbunden ist.Assembly with a substrate or wiring substrate ( 20 ) and a semiconductor chip ( 30 ), wherein the semiconductor chip with the substrate or wiring carrier by means of a connecting wire ( 5 . 5 ' . 5 '' ) is connected according to one of the preceding claims. Verfahren zur Herstellung eines Anschlussdrahts nach einem der Ansprüche 1 bis 10 mit folgenden Schritten: – Abziehen des Kernmaterials (10) von der Rolle (101) in Form eines Drahtes, – Vorbeiführen des Drahts an einer ersten Beschichtungsquelle (112) einer Beschichtungseinrichtung (100) zur Erzeugung der bondfähigen Schicht und – Vorbeiführen des Drahts an einer zweiten oder weiteren Beschichtungsquelle (114, 115) einer Beschichtungseinrichtung (100) zur Erzeugung der lötfähigen Schicht.Process for producing a connecting wire according to one of Claims 1 to 10, comprising the following steps: - stripping off the core material ( 10 ) of the role ( 101 ) in the form of a wire, - passing the wire to a first coating source ( 112 ) a coating device ( 100 ) for producing the bondable layer and - advancing the wire to a second or further coating source ( 114 . 115 ) a coating device ( 100 ) for producing the solderable layer. Verfahren nach Anspruch 12, dadurch gekennzeichnet, dass die Beschichtungseinrichtung (100) als eine CVD- und/oder eine PVD-Einrichtung ausgebildet ist.Method according to claim 12, characterized in that the coating device ( 100 ) is formed as a CVD and / or a PVD device. Verfahren nach einem der Ansprüche 12 und 13, dadurch gekennzeichnet, dass nach der Beschichtung des Drahts mit der zweiten oder weiteren Beschichtungsquelle (114, 115) ein Temperschritt durchgeführt wird.Method according to one of claims 12 and 13, characterized in that after the coating of the wire with the second or further coating source ( 114 . 115 ) an annealing step is performed.
DE102006060899A 2006-12-20 2006-12-20 Lead wire, method of making such and assembly Ceased DE102006060899A1 (en)

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