DE102015205695B4 - Semiconductor component, contact arrangement and method of manufacture - Google Patents

Abstract

Semiconductor component (100) with a semiconductor material level (20) comprising at least two doping areas (20 ') of different conductivity, and with a metallization level (30), the metallization level (30) being arranged on the semiconductor material level (20) and the at least two doping areas ( 20 ') electrically contacted and for electrical contacting of the semiconductor component (100) with a contact element (40, 45, 51, 52, 100') the metallization plane (30) is formed in at least one area as an external contact (11.1, 11.2, 12.1), wherein the metallization plane (30) comprises at least one layer (10) made of German silver, and wherein the metallization plane (30) is formed in at least one area from several layers arranged one above the other, comprising a single layer (10) made of German silver and at least one further layer ( 30 ') of Al, of Au, of Cu, of Ni, of Ag or one of their alloys, the only layer (10) made of nickel silver on the at least one further layer (30 ') as a final layer in which at least one area of the external contact is arranged adjacent.

Description

The invention relates to a semiconductor component, a method for producing the same and a contact arrangement containing the semiconductor component according to the preambles of the independent claims.

State of the art

Semiconductor technology has produced a large number of semiconductor components for versatile use in electrical and / or electronic devices. The semiconductor components each have a semiconductor material level which comprises at least one or a combination of semiconductor layers with regions of different doping. An electrical conductivity of the semiconductor layer is significantly influenced or set by doping. In addition to regions of different doping, the semiconductor material plane can also have insulating separating regions. The semiconductor material level can, for example, take place in the known planar technology through a layered structure. The same also applies to a metallization level which is arranged on the semiconductor material level. Applied layers of the metallization plane can in turn be structured, for example, by a lithographic method. As a result, for example, integrated circuits and conductor tracks are formed. In this case, the conductor tracks formed within the metallization plane electrically connect the different doping regions present in the semiconductor material plane, in particular as constructed components of the integrated circuits, to one another. Furthermore, connections to large-area contacts of the semiconductor components as well as the contacts themselves through the metallization level are also recorded. The semiconductor components are electrically contacted via the contacts, for example with the formation of a superordinate electrical and / or electronic circuit, with further electrical components and / or a circuit carrier. Al or an Al alloy is primarily provided for the metallization level of the semiconductor components, in particular the top metallization level. Metallizations made of Au, Cu or Ag and their respective alloys are also known.

The aforementioned metallizations of the semiconductor components are exposed to high temperatures and oxidizing and / or corrosive media or substances during the process chain for the production of the semiconductor components and also later in their operational use.

In order to avoid oxidation of the contact surface of the semiconductor component during a soldering process, for example, this process is carried out under protective gases - e.g. N2 or N2 + H2 forming gas - carried out. This places high demands on the plant construction and is associated with costs for the provision of the gases. It becomes difficult when providing sintering processes as a connection technique, e.g. with a sintered layer containing silver as a connection between the semiconductor component and a circuit carrier. A correspondingly necessary reaction of the silver-containing sintering pastes is required for the sintering process, which, however, makes the presence of oxygen necessary. It is therefore disadvantageous that, for example, a contact surface of the semiconductor component made of Cu oxidizes at the usual sintering process temperatures, for example from 160-300 ° C. in the presence of oxygen. This makes it difficult or even prevents the connection of the Cu contact surface during the sintering process.

Solderable and wire-bondable surfaces are often distinguished by the fact that they have an oxidation-resistant layer - at least as the final top layer of a contact of a semiconductor component. In the case of wire-bondable contact surfaces, an additional important function of the metallization layer is mechanical protection of the underlying structures, in particular the layers lying within the semiconductor material plane. For such mechanical protection, it is known that the contact is a final metallization stack made of NiP-Pd-Au on a base metallization of the semiconductor component made of Al, Cu or one of their alloys is deposited. This contact, which is then formed from the layers mentioned, can be soldered or contacted with bonding wires. The deposition of this metallization stack is, however, comparatively complex and expensive, especially because of the noble metals it contains.

From the publication US 2005/0 186 707 A1 Semiconductor components are known which have a solderable contact surface made of, for example, titanium, tungsten, nickel or silver.

The published Japanese intellectual property right JP H02 - 119 140 A discloses an electronic circuit in which a copper alloy is basically used as a wiring material instead of an aluminum alloy. German silver is also mentioned as a possible copper alloy.

Disclosure of the invention

advantages

The invention is based on the object of a semiconductor component with a Provide inexpensive metallization, in particular in such a way that a contact of the semiconductor component having the metallization allows versatile contactability through various connection techniques, such as soldering, sintering, gluing and / or a bonding technique.

A further object is to specify an advantageous contact arrangement comprising the semiconductor component and a method for producing the semiconductor component.

This object is achieved by a semiconductor component, a contact arrangement comprising the semiconductor component and a method for producing the semiconductor component with the characterizing features of the independent claims.

The invention is based on a semiconductor component, in particular a power semiconductor component, with a semiconductor material plane comprising at least two doping regions of different conductivity. Silicon, for example, is used as the semiconductor material, although other semiconductor materials used in semiconductor technology are also suitable.

Furthermore, the semiconductor component also comprises a metallization level. The metallization level is arranged on the semiconductor material level. The metallization level can also penetrate into the semiconductor material level in areas through so-called through-contacts. The boundary area between the metallization level and the semiconductor material level does not necessarily have to be designed to be planar structurally. Depending on the design of the doping regions present in the semiconductor material plane, in particular in the form of designed components of the integrated circuit provided, structural elevations and depressions are possible. Furthermore, the metallization level is designed such that it makes electrical contact with the at least two doping regions of the semiconductor material level. For this purpose, the metallization level is structured in such a way that it provides a conductor track and / or connection structure for forming the integrated circuit. In addition, the metallization level for electrically contacting the semiconductor component with a contact element, for example with a further electrical component, a circuit carrier, a connecting element such as a wire or ribbon bond or a metal clip, is formed in at least one area as an external contact of the semiconductor component. The metallization level advantageously comprises at least one layer made of nickel silver. The German silver is an alloy of the elements copper, nickel and zinc, with the alloy proportionally containing 47-64% copper, 10-25% nickel and 15-42% zinc. The addition of other elements in the range of less than 5% is also permitted. For example, Mn, Fe, Pb or Sn can be contained in German silver. German silver is an alloy that is very inexpensive to manufacture and in particular does not contain any precious metals.

An advantageous embodiment provides, for example, that the metallization plane is formed entirely or, alternatively, predominantly, for example more than 10%, from nickel silver. It has been shown in a surprising way that the nickel silver, due to its very low oxidation and corrosion resistance, can be easily integrated within the manufacturing processes of semiconductor technology as at least a part of the metallization level without special precautions. On this basis and because of the electrical properties otherwise exhibiting, for example electrical conductivity, an advantageous use of nickel silver within the construction and connection technology of a semiconductor component is shown. In this case, the process techniques known in semiconductor technology for the deposition of metallizations can advantageously be used for the application of the nickel silver to the semiconductor material level. Furthermore, after the nickel silver metallization has been applied, structuring can be carried out using an etching technique, for example, or alternatively using a “lift-off” mask process or another process technology known for structuring, for example.
First tests show that nickel silver shows good, constant material stability even at high temperatures, for example up to 300 ° C, especially up to 250 ° C, so that it is possible to the effect that semiconductor components, for example based on a SiC- Technology that could be operated at elevated operating temperatures. It is to be expected that even at high operating temperatures, the German silver does not allow any or only very little metal diffusion. In this way, the German silver itself could at least reduce the need and / or the scope of otherwise customary additional materials used as diffusion barriers within the metallization level of a semiconductor component.

Furthermore, compared to otherwise known metallization, such as, for example, made of Al or Cu, the German silver has a significantly increased mechanical load capacity. In this way, a layer of nickel silver contained in the metallization plane acts as a type of reinforcement structure, so that the semiconductor component can be subjected to higher mechanical loads overall without the sensitive semiconductor material plane being adversely affected.

Furthermore, an advantageous embodiment results from the fact that the metallization plane has the at least one layer made of nickel silver as the final layer. In this way, the underlying layers and structures covered by the final layer of nickel silver, in particular the integrated circuit, are protected in a particularly simple manner from external influences, for example from ions and / or corrosive or oxidizing media. A particularly great advantage arises from the fact that the at least one layer made of nickel silver is present as the final layer in the at least one area of the external contact. In this way, the German silver offers a very flexible and versatile contact metallization for making electrical contact with the semiconductor component with a further contact element, for example for forming at least one contact arrangement within a higher-level electrical circuit. Depending on the embodiment variant of the semiconductor component, it can have such an external contact at various points in its external area. In many cases, a semiconductor component is designed with an upper side and / or a lower side. The top side and / or the bottom side then preferably has at least one such external contact. To make contact with the semiconductor component via the external contact, a soldering, sintering, gluing, welding or bonding technique can be used for the further construction and connection technique. To use one of these connection techniques, it is not necessary to design and / or adapt the external contact in a particular or different manner as a function of one of these techniques. A customary metallization made of Al is, for example, very soft and is severely deformed, for example, by Cu wire bonds. For mechanical reinforcement, such metallizations require an expensive additional metal stack, such as a NiP-Pd-Au layer stack. The layer of Au is required as additional protection against oxidation and corrosion. A customary metal plating made of Cu in turn oxidizes at room temperature, which means that poor adhesion conditions exist for an applied sintered and / or solder layer. An improvement then also requires additional metal stacks applied to the Cu as protection against oxidation and corrosion. In addition, it is not uncommon for complex and expensive process management to be required for this.

It is therefore particularly advantageous that all external contacts of the semiconductor component have a final layer made of nickel silver. If a semiconductor component embodied in this way is electrically contacted within a higher-level circuit, the connection technology that is single or predominantly specified in the electrical circuit can advantageously also be applied without restriction to the contacting of the semiconductor component. This results in a very cost-effective embodiment of a semiconductor component, since an always constant embodiment flexibly allows several types of contact to be made at the same time.

To achieve sufficient protection against oxidation, for example to ensure a sufficient adhesive base for a solder or sintered layer to be applied, a layer thickness in the range of 50 nm - 500 nm is advantageous for the at least one layer made of nickel silver, in particular as the final layer. If, in addition, additional mechanical protection is intended, for example to make the electrical contact using a force-loading bonding process, advantageous layer thicknesses from 200 nm, in particular in a range of 1-50 μm, are to be implemented.
A further developing embodiment provides that the metallization level comprises at least one further layer made of Al, Au, Cu, Ni or Ag, the at least one layer made of nickel silver being arranged adjacent to the at least one further layer. The same applies to such a further layer, which is present as a respective alloy of the materials mentioned. With regard to Al, for example, their alloys AICu, AISi, AlSiCu are to be named as examples. Typical layer thicknesses for a further layer made of Al and / or an Al alloy are in a range of 1-5 µm. The layer thickness in the case of a Cu metallization and / or a metallization made of a Cu alloy is advantageously in a range of 1-15 μm, that in the case of an Ag metallization or a metallization made of an Ag alloy preferably in a range of 0 .05 - 2 µm.
Accordingly, semiconductor components with previous metallizations can continue to be purchased as purchased parts and only the at least one layer made of nickel silver can be subsequently applied as a final layer to the aforementioned metallizations. Semiconductor components adapted in this way can thus obtain the advantages listed by the nickel silver layer in the same way.

Advantageously, semiconductor components available as purchased parts are also covered in this case, in which the metallization level comprises at least one further layer as an adhesion promoter, as a diffusion barrier and / or as a voltage compensation, the at least one further layer being arranged between the at least one layer made of nickel silver and the semiconductor material level is. A further layer present for this functional purpose is preferably formed from Cr, Ti, Ta, W, Ni, Cu, Al, or one of their alloys, in particular from TiW, TiN, TaN, TaSiN, AlCu, AlSiCu, AlSi, NiV. Often is one such further layer is formed as one of several layers of a so-called OPM (over pad metallization), in particular in the form of a contact pad. In many cases, an OPM is deposited as protection against oxidation and / or corrosion on a base metallization of the semiconductor component containing Al or Cu. Possible metal stacks of an OPM are, for example, NiP-Pd-Au, NiP-Au, NiP-Pd, NiP-Pd-Ag, Ni-Pd-Au, Ti-NiV-Ag, Ti-NiV-Au, Cr-NiV-Ag, Cr-NiV-Au, which in this way are also provided in particular as so-called rear-side metallizations. A final layer of nickel silver can be deposited on all of these metal stacks. There are a large number of possible designs with regard to the layer thicknesses of the one further layer or the metal stacks containing it. A layer thickness range of 0.2-3 μm for a layer made of NiP, 0.2-0.5 μm for a layer made of Pd and 10-100 nm for a layer made of Au is mentioned here only as an example.

In principle, the at least one layer of nickel silver is used to manufacture a semiconductor component using a galvanic process, thermal spraying (e.g. plasma or cold gas spraying), roll plating or physical (e.g. vapor deposition, electric arc evaporation, cathode atomization (sputtering), ion plating) or chemical vapor deposition applied within the metallization level.

In particular with regard to an adaptation of the metallization of a semiconductor component that can be purchased as a purchase part, it is advantageously sufficient that the metallization plane is formed in at least one area from several layers arranged one above the other, but in which a single layer of nickel silver is then provided, in particular as the one final layer in the at least one area of the external contact. This already results in an improvement in the advantageous manner already described due to the one layer of nickel silver.

Further advantages result from the provision of the at least one layer of nickel silver in one of the described embodiments of a semiconductor component, by using the semiconductor component as a transistor, in particular as a power semiconductor component, for example an IGBT, a MOSFET or a J-Fet, or as a microcontroller, in particular a ASIC, or as a diode or a memory module, or as a sensor, in particular a MEMS. Especially semiconductor components that are exposed to high temperatures and corrosive media - such as Sensors in the exhaust system or combustion chamber of an internal combustion engine can benefit greatly from nickel silver metallization.

The invention also leads to a contact arrangement comprising at least one semiconductor component in one of the previously illustrated embodiment. In this case, at least one external contact of the semiconductor component is electrically connected to at least one contact element, in particular by a solder, sintered or adhesive layer or a wire or ribbon bond or a metal clip. The flexible contacting possibility of a semiconductor component according to the invention results in contact arrangements for forming an electrical circuit, the same connection technology being used throughout or at least predominantly for the electrical circuit. Likewise, a connection technique for maintaining the contact arrangement can be based on the electrical circuit comprising the entire contact arrangement.

In a further development of the contact arrangement, the contact element connected to the external contact of the semiconductor component is a further electrical and / or electronic component or a conductor track structure or a contact surface on a circuit carrier. A wire bond, a ribbon bond or a metal clip is also advantageously conceivable as a possible contact element.

The invention also leads to a method for producing a semiconductor component according to the invention. This provides that the at least one layer of nickel silver is deposited by a galvanic process, by thermal spraying (e.g. plasma or cold gas spraying), by roll plating or by a physical (e.g. vapor deposition, arc evaporation, cathode atomization (sputtering), ion plating) or chemical Gas phase deposition is applied within the metallization level. A large number of techniques for applying the at least one layer of nickel silver within the metallization level are advantageously possible. This is done in a particularly simple manner when a final layer of nickel silver is provided, in particular in at least one region which is designed as an external contact of the semiconductor component.

A very simple and cost-effective form of the method results from the fact that a semiconductor component, which can be obtained, for example, as a purchased part, with metallization layers already contained within the metallization levels, is kept ready. In the provision of one of the aforementioned application techniques, a final layer of nickel silver is applied to the final metallization of at least one external contact, preferably all external contacts of the semiconductor component, which is already present on the semiconductor component as a purchased part. Likewise, the external contacts can also be cleaned before application the final layer of nickel silver is to be applied. The cleaning can include, for example, removing an oxide layer of the existing final metallization, for example by a physical vapor deposition, such as back sputtering, plasma cleaning. Alternatively, cleaning is carried out using a chemical process, for example by etching or pickling with formic acid or citric acid.

Figure list

• 1: eine beispielhafte Kontaktanordnung eines Halbleiterbauelementes,
• 2: ein Ausschnitt im Bereich eines Außenkontaktes eines Halbleiterbauelementes in detaillierter Darstellung der Metallisierungsebene.

Further advantages, features and details of the invention emerge from the following description of preferred exemplary embodiments and with reference to the drawing. This shows in:

• 1 : an exemplary contact arrangement of a semiconductor component,
• 2 : a section in the area of an external contact of a semiconductor component in a detailed representation of the metallization level.

Embodiments of the invention

1 shows a semiconductor component according to the invention in a very simple and schematic representation 100 , for example a power transistor. The semiconductor component 100 on the one hand comprises a semiconductor material level 20th . The semiconductor material level 20th indicates areas 20 ' different doping. These areas 20 ' effect within the semiconductor material level 20th different electrical conductivities, whereby functionally defined components - for example for the formation of an integrated electrical circuit - are obtained. In many cases, a wafer substrate made of a semiconductor material, for example of Si, SiC or other known semiconductor materials, is assumed. The training of areas 20 ' different doping is possible in semiconductor technology by known process techniques in parallel for a large number of semiconductor components to be formed on the wafer substrate. Such areas 20 ' can be formed over several layers, which enables, for example, the production of multi-layer chip structures. On the areas 20 ' different doping are then one or more different metallization layers 30 ' upset. This creates a metallization level 30th formed on the semiconductor material level 20th is arranged. The metallization level 30th covers several functions. First and foremost, those are in the semiconductor material level 20th Areas designed as functional components 20 ' different doping electrically contacted. The electrical contacting forms a defined integrated electrical circuit, which is the basis for the functioning of the semiconductor component 100 forms and defines its electrical application possibilities within a higher-level electrical and / or electronic circuit. For electrical contacting, this is done on the semiconductor material level 20th at least one applied metallization layer 30 ' formed by corresponding structuring processes known in semiconductor technology in the form of conductor track structures. Further metallization layers can also be used 30 ' as an adhesion promoter, as a diffusion barrier and / or as a voltage compensation with respect to the semiconductor material of the semiconductor material level 20th within the metallization level 30th be included. The metallization level 30th in this case also includes a closing layer in at least one area, which acts as an external contact for making electrical contact with the semiconductor component 100 is formed with a contact element. In the embodiment according to 1 exhibits the semiconductor component 100 three external contacts. These are on one top 11 of the semiconductor component 100 two external contacts 11.1 , 11.2 arranged. The third outside contact 12.1 is on the other hand on a bottom 12th of the semiconductor element 100 intended. There are of course embodiments of the semiconductor component 100 possible to have a different number of external contacts and their arrangement at a different point on the semiconductor component 100 than here in 1 executed as an example.

2 shows a section of one of the external contacts 11.1 , 11.2 , 12.1 , where the metallization level 30th is shown in more detail in the area of the external contact. The metallization level 30th has multiple layers of metallization 30 ' on, at least a base metallization 30.1 containing AI. The base metallization can extend to the limit 25th to the semiconductor material level 20th extend and, for example, the conductor track structure for making electrical contact with the areas 20 ' different doping within the semiconductor material level 20th include. In addition, it also extends into the area of the metallization level 30th , which as one of the outside contacts 11.1 , 11.2 , 12.1 is provided. This area is on the base metallization 30.1 a stack of metal 30.2 NiP-Pd-Au deposited. NiP-Pd-Au is a hard layer that forms the base metallization containing the soft Al 30.1 mechanically protects against deformation. Such deformations can be caused, for example, by making contact with the external contact 11.1 , 11.2 , 12.1 arise by means of a bonding technique due to the force stress present due to the connection technique. The Au layer acts as protection against oxidation and corrosion. A semiconductor device with one up to the metallization stack 30.2 The metallization level described is available as a typical purchase part. Because of the mass production, such purchased parts can be obtained inexpensively. To improve the contactability of such purchased parts with a large number of connection techniques such as soldering, sintering, gluing or a bonding technique, the semiconductor component according to the invention 100 a final layer 10 made of nickel silver. This layer 10 nickel silver can be deposited by means of sputtering, for example, although other methods of application can also be used as an alternative. Such a final layer 10 made of nickel silver can of course also be provided as purchased parts in other designs of the semiconductor component. For example, the final layer 10 made of nickel silver, also in corresponding designs, directly on the base metallization 30.1 be upset. If necessary, an oxide layer of the base metallization is required before the nickel silver is applied 30.1 to remove. The removal can take place, for example, by physical vapor deposition, such as back sputtering or plasma cleaning. Alternatively, cleaning is carried out by means of a chemical process, for example by etching or pickling with formic acid or citric acid. Furthermore, the base metallization can also contain Cu, Ag, Ni or Au instead of Al. This also includes their alloys.

Through the final layer 10 The semiconductor component according to the invention can be made from nickel silver 100 can be flexibly connected to a contact element using different connection techniques. In 1 is an exemplary contact arrangement 200 of the semiconductor component 100 shown. This is for example the top external contact 11.1 via a wire or ribbon bond 51 with a contact surface 45 a circuit carrier 40 connected. The second external contact on the top 11.2 is by means of a metal clip 52 with another electrical component 100 ' connected. The metal clip 52 is for example by laser welding with the external contact 11.2 connected. Alternatively, the connection can also be made by means of a sintered layer, a solder layer or an adhesive layer (not shown). The further electrical component 100 ' can also be in the form of a semiconductor component according to the invention 100 be executed and therefore have an external contact with a final layer of nickel silver. The underside external contact 12.1 of the semiconductor component 100 is also with a contact surface 46 of the circuit board 40 connected, for example by means of a solder, sintered or adhesive layer 47 . The contact areas 45 , 46 are part of a circuit board 40 arranged conductor track structure or are indirectly or directly connected to it. The contact arrangement shown 200 is, for example, part of a higher-level circuit of an electrical module or device. The contact arrangement 200 can also differ from the exemplary embodiment according to FIG 1 be executed. Due to the flexible contactability of the final layer 10 From nickel silver using various connection techniques, a connection technique can be selected exclusively or predominantly, which is based on the connection technique otherwise specified for the higher-level circuit.

In principle, the semiconductor component 100 also be formed without starting from a purchased part, which is a final layer 10 made of nickel silver for contacting the semiconductor component with a contact element.
A semiconductor component according to the invention can 100 also an overall base metallization 30.1 Provide made of nickel silver. In a special embodiment, this base metallization can then 30.1 be guided at least in a region up to an outer surface of the semiconductor component and form an external contact made of nickel silver. Depending on the application, the metallization level 30th be designed in many ways and have at least one further metallization layer in addition to at least one layer of nickel silver. In principle, embodiments are advantageous in which the metallization plane 30th is formed to more than 10% of German silver and / or has a final layer of German silver in an area of the external contact.

Claims (12)

Semiconductor component (100) with a semiconductor material level (20) comprising at least two doping areas (20 ') of different conductivity, and with a metallization level (30), the metallization level (30) being arranged on the semiconductor material level (20) and the at least two doping areas ( 20 ') electrically contacted and for electrical contacting of the semiconductor component (100) with a contact element (40, 45, 51, 52, 100') the metallization plane (30) is formed in at least one area as an external contact (11.1, 11.2, 12.1), wherein the metallization plane (30) comprises at least one layer (10) made of German silver, and wherein the metallization plane (30) is formed in at least one area from several layers arranged one above the other, comprising a single layer (10) made of German silver and at least one further layer ( 30 ') of Al, of Au, of Cu, of Ni, of Ag or one of their alloys, the only layer (10) made of nickel silver on the at least one further layer (30 ') as a final layer in which at least one area of the external contact is arranged adjacent. Semiconductor component (100) according to Claim 1 , characterized in that the metallization plane (30) is formed from more than 10% German silver. Semiconductor component (100) according to one of the preceding claims, characterized in that all external contacts (11.1, 11.2, 12.1) of the semiconductor component (100) have a final layer (10) made of nickel silver. Semiconductor component (100) according to one of the preceding claims, characterized in that the layer (10) made of nickel silver has a layer thickness of 0.05 to 50 µm. Semiconductor component (100) according to one of the preceding claims, characterized in that the layer thickness of the one further layer made of Al or an Al alloy is in a range of 1 - 5 µm, the layer thickness of the one further layer made of Cu or a Cu Alloy in a range of 1-15 µm and the layer thickness of the one further layer made of Ag or an Ag alloy in a range of 0.05-2 µm. Semiconductor component (100) according to one of the preceding claims, characterized in that the metallization plane (30) comprises at least one further layer (30 ') as an adhesion promoter, as a diffusion barrier and / or as a voltage equalization in addition to the at least one layer (10) made of nickel silver, wherein the at least one further layer (30 ') is arranged between the at least one layer (10) made of nickel silver and the semiconductor material plane (20). Semiconductor component (100) according to Claim 6 , characterized in that the at least one further layer (30 ') made of Cr, Ti, Ta, W, Ni, Cu, Al, or one of their alloys, in particular made of TiW, TiN, TaN, TaSiN, AlCu, AlSiCu, AlSi, NiV, is formed. Semiconductor component (100) according to one of the preceding claims, characterized in that the semiconductor component (100) is a transistor, a microcontroller, a diode, a memory module or a sensor. Contact arrangement (200) of at least one semiconductor component (100) according to one of the Claims 1 to 8th , characterized in that at least one external contact (11.1, 11.2, 12.1) of the semiconductor component (100) is electrically connected to at least one contact element (40, 45, 51, 52, 100 '), in particular by a solder, sinter or adhesive layer or a wire or ribbon bond (51) or a metal clip (52). Contact arrangement (200) according to Claim 9 , characterized in that the contact element is a further electrical and / or electronic component (100 '), a conductor track structure (45), a contact surface (45) of a circuit carrier (40), a wire or ribbon bond (51) or a metal clip (52 ) is. Method for producing a semiconductor component according to one of the Claims 1 to 8th , characterized in that the at least one single layer (10) made of nickel silver is applied within the metallization plane (30) by a galvanic process, by thermal spraying, by roll plating or by a physical or chemical vapor deposition. Procedure according to Claim 11 , characterized in that the one obtainable as a purchase part semiconductor component is kept ready with at least one external contact having a termination metallization, the at least one layer of nickel silver then being applied as a final layer to the termination metallization.

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