DE102019124954A1 - Method for connecting a first electronic component to a second electronic component - Google Patents
Method for connecting a first electronic component to a second electronic component Download PDFInfo
- Publication number
- DE102019124954A1 DE102019124954A1 DE102019124954.6A DE102019124954A DE102019124954A1 DE 102019124954 A1 DE102019124954 A1 DE 102019124954A1 DE 102019124954 A DE102019124954 A DE 102019124954A DE 102019124954 A1 DE102019124954 A1 DE 102019124954A1
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- electronic component
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- metal bodies
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F7/00—Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting wherein at least one part is obtained by sintering or compression
- B22F7/06—Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting wherein at least one part is obtained by sintering or compression of composite workpieces or articles from parts, e.g. to form tipped tools
- B22F7/062—Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting wherein at least one part is obtained by sintering or compression of composite workpieces or articles from parts, e.g. to form tipped tools involving the connection or repairing of preformed parts
- B22F7/064—Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting wherein at least one part is obtained by sintering or compression of composite workpieces or articles from parts, e.g. to form tipped tools involving the connection or repairing of preformed parts using an intermediate powder layer
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L24/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
- H01L2924/191—Disposition
- H01L2924/19101—Disposition of discrete passive components
- H01L2924/19107—Disposition of discrete passive components off-chip wires
Abstract
Verfahren zum Verbinden eines ersten elektronischen Bauteils mit einem zweiten elektronischen Bauteil, wobei eine elektrisch leitende Verbindung zwischen dem ersten und dem zweiten elektronischen Bauteil durch Sintern eines metallischen Sintermaterials, das zwischen dem ersten elektronischen Bauteil und dem zweiten elektronischen Bauteil angeordnet ist, gebildet wird, gekennzeichnet durch die Schritte: Befestigen wenigstens einer Vielzahl von Metallkörpern, die über die Fläche der Oberfläche eines der elektronischen Bauteile verteilt sind, unter Einhalten von Freiräumen zwischen den Metallkörpern auf dem elektronischen Bauteil, oder Befestigen eines Metallkörpers, der sich in einer Ebene erstreckt, auf dem elektronischen Bauteil, wobei der Metallkörper Abschnitte aufweist, die unter Belassen eines Freiraums zwischen den Abschnitten einander gegenüberliegend angeordnet sind, Aufbringen des Sintermaterials auf einer Fläche wenigstens eines der elektronischen Bauteile, und Herstellen einer elektrisch leitenden Verbindung zwischen der Oberfläche des einen elektronischen Bauteils mit der Vielzahl von Metallkörpern darauf mit dem anderen elektronischen Bauteil durch Sintern des Sintermaterials.Method for connecting a first electronic component to a second electronic component, wherein an electrically conductive connection between the first and the second electronic component is formed by sintering a metallic sintered material which is arranged between the first electronic component and the second electronic component, characterized by the steps of: attaching at least a plurality of metal bodies distributed over the surface of the surface of one of the electronic components while maintaining clearances between the metal bodies on the electronic component, or attaching a metal body extending in a plane on the electronic component, wherein the metal body has sections which are arranged opposite one another while leaving a space between the sections, applying the sintered material to a surface of at least one of the electronic components, and producing a r electrically conductive connection between the surface of the one electronic component with the plurality of metal bodies thereon with the other electronic component by sintering the sintered material.
Description
Die Erfindung betrifft ein Verfahren zum Verbinden eines ersten elektronischen Bauteils mit einem zweiten elektronischen Bauteil, wobei durch Sintern eines metallischen Sintermaterials, das zwischen dem ersten elektronischen Bauteil und dem zweiten elektronischen Bauteil angeordnet ist, eine elektrisch leitende Verbindung zwischen dem ersten und dem zweiten elektronischen Bauteil hergestellt wird.The invention relates to a method for connecting a first electronic component to a second electronic component, with an electrically conductive connection between the first and the second electronic component by sintering a metallic sintered material which is arranged between the first electronic component and the second electronic component will be produced.
Das Sintern von Metallformkörpern zur Bildung eines geeigneten Anschlussbereichs für die Verbindung mit Drähten oder Bändern auf einem Leistungshalbleiterbauelement, das mit Edelmetallen beschichtet ist, ist durch die Verwendung einer Silbersinterpaste möglich.The sintering of shaped metal bodies to form a suitable connection area for the connection with wires or strips on a power semiconductor component that is coated with noble metals is possible through the use of a silver sintering paste.
In diesem Zusammenhang versteht man unter dem Begriff Edelmetalle Metalle mit einer sehr geringen Neigung zur Oxidation, wenn sie Umgebungsbedingungen und Temperaturen bis zu 300 °C ausgesetzt sind.In this context, the term precious metals is understood to mean metals with a very low tendency to oxidize when exposed to ambient conditions and temperatures of up to 300 ° C.
Eine Silbersinterpaste befindet sich auf den Metallformkörpern, die zusammen mit der Paste auf das Edelmetall eines Leistungshalbleiters aufgetragen werden. Die Metallschichten werden durch einen Sinterprozess miteinander verbunden; Silbermoleküle diffundieren in die Edelmetalle des Metallformkörpers und die Metallisierung auf dem Leistungshalbleiter.A silver sintering paste is located on the metal moldings, which are applied to the precious metal of a power semiconductor together with the paste. The metal layers are connected to one another by a sintering process; Silver molecules diffuse into the precious metals of the metal molding and the metallization on the power semiconductor.
Obwohl es möglich ist, durch Verwendung von Silbersinterpasten zuverlässige und sehr dauerhafte Verbindungen zwischen Edelmetallen und Halbedelmetallen herzustellen, leidet diese Verbindung dennoch hauptsächlich unter diesen Nachteilen:
- - da für die Diffusionsprozesse beim Sintern Edel- oder Halbedelmetalle benötigt werden, müssen diese Metalle mithilfe komplexer Prozesse, die vom Halbleiterhersteller durchgeführt werden müssen, auf die Halbleiterkomponenten aufgebracht werden;
- - jede zusätzliche Beschichtung der Halbleiterelemente ist mit komplexen Arbeitsschritten und großem Aufwand verbunden;
- - Edelmetalle als Ressource sind teuer und werden in Zukunft knapper und immer teurer werden.
- - Since precious or semi-precious metals are required for the diffusion processes during sintering, these metals must be applied to the semiconductor components using complex processes that have to be carried out by the semiconductor manufacturer;
- - Each additional coating of the semiconductor elements is associated with complex work steps and great effort;
- - Precious metals as a resource are expensive and will become scarcer and more expensive in the future.
Die Verwendung von Nichtedelmetallen als Alternative, wie z.B. Aluminium, führt aufgrund der Selbstpassivierung zu einer unerwünschten Oxidschicht auf der Metalloberfläche (z.B. Aluminiumoberflächen), die die Diffusionsvorgänge beim Sintern stört.The use of non-precious metals as an alternative, such as aluminum, leads to an undesirable oxide layer on the metal surface (e.g. aluminum surfaces) due to the self-passivation, which interferes with the diffusion processes during sintering.
Dieser Aspekt ist in
Die Verwendung von Nicht-Edelmetallen, wie sie in Stand der Technik bekannt ist, ist daher keine gangbare Alternative für die Verwendung von Edelmetallen, die für die Herstellung metallischer Formkörper bestimmt sind.The use of non-noble metals, as is known in the prior art, is therefore not a viable alternative for the use of noble metals which are intended for the production of metallic moldings.
Dennoch ist es Gegenstand der vorliegenden Erfindung, ein Verfahren zum Verbinden von Halbleiterbauelementen ohne Metallisierung und Edelmetalle bereitzustellen.Nevertheless, the object of the present invention is to provide a method for connecting semiconductor components without metallization and noble metals.
Erfindungsgemäß wird diese Aufgabe durch das Verfahren mit den in Anspruch 1 angegebenen Eigenschaften erreicht. Die abhängigen Ansprüche spezifizieren vorteilhafte Ausführungsformen.According to the invention, this object is achieved by the method having the properties specified in claim 1. The dependent claims specify advantageous embodiments.
Als Ziel der Erfindung schlägt diese das Verbinden von Halbleiterbauelementen mit Edelmetallen auch ohne Metallisierung durch Sinterprozesse vor. Erfindungsgemäß weisen die Halbleiterbauelemente dementsprechend auf der Oberseite ihrer Verbindungsflächen Aluminium oder Aluminiumlegierungen auf, wobei die passiv gebildete Oxidschicht durch Aufbringen eines anderen Metalls perforiert wird. Diese Perforation der Oxidschicht kann durch einen Energieeintrag, wie z.B. Bewegung oder die Anwendung von Ultraschall gegebenenfalls bei erhöhter Temperatur und/oder erhöhtem Druck bei gleichzeitiger Entfernung von Sauerstoff erreicht werden, wodurch eine Diffusion mit Adhäsion eingeleitet wird.The aim of the invention is to connect semiconductor components with noble metals, even without metallization, by sintering processes. According to the invention, the semiconductor components accordingly have aluminum or aluminum alloys on the upper side of their connecting surfaces, the passively formed oxide layer being perforated by applying another metal. This perforation of the oxide layer can be achieved by an energy input, such as movement or the use of ultrasound, if necessary at elevated temperature and / or elevated pressure with simultaneous removal of oxygen, whereby diffusion with adhesion is initiated.
Dies bedeutet, dass dem Sinterprozess ein Vorbereitungsprozess bezüglich der Oberflächen mit Oxidanhaftungen vorausgeht, wobei ein zusätzliches Metall auf diese Oberflächen aufgebracht wird. Heutzutage kann dies z.B. durch den Einsatz eines Drahtbondverfahrens erreicht werden.This means that the sintering process is preceded by a preparation process with regard to the surfaces with oxide adhesions, with an additional metal being applied to these surfaces. Nowadays this can be achieved e.g. by using a wire bonding process.
Die Kombination von Druck, Wärme und/oder Ultraschall während des Bondens bewirkt eine Perforation der Oxidschicht auf dem Nichtedelmetall, wodurch eine intermetallische Phase zwischen den Metallen erzeugt wird. Auf diese Weise erhält man eine Verbindung mit guter elektrischer Leitfähigkeit.The combination of pressure, heat and / or ultrasound during bonding causes the oxide layer on the base metal to perforate, creating an intermetallic phase between the metals. In this way a connection with good electrical conductivity is obtained.
Experimente haben gezeigt, dass dieses Verfahren, zusätzlich zur Verwendung dieses Verfahrens in einer punktförmigen Weise, wie beim Drahtbonden, auch mit flächiger Bedeckung oder einer Vielzahl von Punkten auf der Verbindungsfläche gleichzeitig eingeleitet werden kann.Experiments have shown that this method, in addition to using this method in a punctiform manner, as in the Wire bonding, even with extensive coverage or a large number of points on the connection surface, can be initiated at the same time.
Darauf wird eine Sinterpaste mit hohem Diffusionspotential aufgetragen, das Bindemetall geladen und der Sinterprozess gestartet. Aufgrund der mehrfachen, lokalisierten Perforation der metallischen Schicht durch das zusätzliche Metall kann die Sinterpaste metallische Bindungen mit den Bindungspartnern erzeugen.A sintering paste with a high diffusion potential is applied to this, the binding metal is charged and the sintering process is started. Due to the multiple, localized perforation of the metallic layer by the additional metal, the sintering paste can create metallic bonds with the binding partners.
Beispiel 1example 1
Beispielsweise werden metallische Bondfüße oder Ball-Bonds mit Drahtbondprozessen (z.B. Thermosonic-Bonden) auf die Aluminiumoberfläche eines Leistungshalbleiters aufgebracht. Golddraht, zum Beispiel, ist ein geeigneter Draht, der bereits in der Mikroelektronikindustrie zur Herstellung erfolgreicher Verbindungen mit Aluminium verwendet wird.For example, metallic bonding feet or ball bonds are applied to the aluminum surface of a power semiconductor using wire bonding processes (e.g. thermosonic bonding). Gold wire, for example, is a suitable wire already used in the microelectronics industry to make successful connections with aluminum.
Ball Bonds können ausgeführt werden und führen zu sogenannten Gold Bumps auf dem Aluminium. Die Methode, die nur das Bonden von Kugeln vorsieht, ohne Drahtbrücken oder Drahtschleifen zu erzeugen, ist im Stand der Technik auch als Au-stud-bumping-Verfahren bekannt. Dabei wird insbesondere eine Vielzahl von Bondfüssen (Goldbumps) über die zu bondende Fläche des Aluminiums verteilt.Ball bonds can be executed and lead to so-called gold bumps on the aluminum. The method, which only provides for the bonding of balls without creating wire bridges or wire loops, is also known in the prior art as the au-stud-bumping method. In particular, a large number of bonding feet (gold bumps) are distributed over the surface of the aluminum to be bonded.
Durch den Bondingprozess wird eine auf dem Aluminiumkörper gebildete Aluminiumoxidschicht lokal perforiert und durch Interdiffusion eine Verbindung zwischen dem Goldbump und der rein metallischen Oberfläche der Aluminiummetallisierung hergestellt.The bonding process locally perforates an aluminum oxide layer formed on the aluminum body and interdiffusion creates a connection between the gold bump and the purely metallic surface of the aluminum metallization.
Darauf folgen die üblichen Schritte für das Sintern mit der Niedrigtemperatur-Bonding-Technik. Eine Sinterphase wird auf die Aluminiumoberfläche und die Golbumps aufgetragen, und ein Sinterprozess wird durchgeführt.This is followed by the usual steps for sintering with the low temperature bonding technique. A sintering phase is applied to the aluminum surface and the gol bumps, and a sintering process is carried out.
Der Zweck zum Bereitstellen der Bondfüße auf dem Aluminiumkörper liegt darin, eine bessere Haftwirkung der Sinterschicht mit dem Aluminium zu erreichen. Die Moleküle der Sinterpaste können nun ohne störende Oxidschichten zum Gold diffundieren. Durch den Bondingprozess, der die Oxidschicht des Aluminiums perforiert, können die Diffusionsvorgänge nun bis hinunter zum Aluminium wirken. Darüber hinaus dehnt sich die Diffusionszone auch seitlich aus, so dass eine größtenteils flächige Bindung der gesinterten Verbindung resultiert. Das bedeutet, dass neben der lokalen Perforation des Aluminiumoxids an den Goldbumps auch die Sinterfähigkeit in angrenzenden Bereichen verbessert werden kann.The purpose of providing the bonding feet on the aluminum body is to achieve a better adhesive effect between the sintered layer and the aluminum. The molecules of the sinter paste can now diffuse to the gold without disruptive oxide layers. Through the bonding process, which perforates the oxide layer of the aluminum, the diffusion processes can now affect the aluminum. In addition, the diffusion zone also expands laterally, so that a largely flat bond of the sintered connection results. This means that in addition to the local perforation of the aluminum oxide on the gold bumps, the sinterability in adjacent areas can also be improved.
Beispiel 2Example 2
Eine weitere Möglichkeit zum Penetrieren des Aluminiumoxids ist die Möglichkeit, einen Draht, wie z.B. Kupferdraht, über das Ultraschallverfahren auf die Aluminiumoberfläche des Chips zu bonden. Vorteilhaft ist die gleichmäßige Verteilung der Schweißpunkte über die gesamte Chipfläche.Another possibility for penetrating the aluminum oxide is the possibility of bonding a wire, e.g. copper wire, to the aluminum surface of the chip using the ultrasonic method. The even distribution of the welding points over the entire chip area is advantageous.
Eine Sinterschicht wird z.B. auf den Bereich aufgetragen, der mit Kupferdraht gebondet wurde, wobei die Höhe der Sinterschicht größer ist als die Höhe der Bonddrähte. Die Sinterschicht kann mit oder ohne Druck gesintert werden. Nach dem Sintern bilden die Bondflächen und die Drähte einen Kontaktpunkt mit der Sinterschicht.For example, a sintered layer is applied to the area that has been bonded with copper wire, the height of the sintered layer being greater than the height of the bond wires. The sintered layer can be sintered with or without pressure. After sintering, the bonding surfaces and the wires form a contact point with the sintered layer.
Vorzugsweise wird die Dicke der Bonddrähte so gewählt, dass die Nichtedelmetallisierung nicht beschädigt wird. Die Verwendung von dünnen Drähten wird empfohlen. Die Anzahl der Bondflächen wird vorzugsweise so gewählt, dass die erforderliche Stromstärke ohne Überlastung der Bondflächen erreicht wird. Die Anzahl der Bondflächen ist entsprechend zu wählen, um eine mechanische Verbindung von ausreichender Qualität zu gewährleisten.The thickness of the bonding wires is preferably chosen so that the non-noble metallization is not damaged. The use of thin wires is recommended. The number of bonding surfaces is preferably selected so that the required current strength is achieved without overloading the bonding surfaces. The number of bonding surfaces must be selected accordingly in order to ensure a mechanical connection of sufficient quality.
Beispiel 3Example 3
Eine weitere Ausführungsform basiert auf dem Sintern eines Pads aus Silberpulver auf die Nichtedelmetalloberfläche des Halbleiterbauelements mittels Ultraschall- und/oder Reibschweißen. Mit Hilfe von Ultraschall und/oder Reibungsenergie wird die störende Oxidschicht entfernt. Als Ergebnis wird das Silbersinterkissen in das Nichtedelmetall diffundiert und bildet eine stabile intermetallische Phase.Another embodiment is based on the sintering of a pad made of silver powder onto the base metal surface of the semiconductor component by means of ultrasound and / or friction welding. The disruptive oxide layer is removed with the aid of ultrasound and / or frictional energy. As a result, the sintered silver pad is diffused into the base metal and forms a stable intermetallic phase.
Zunächst werden auf die Nichtedelmetallisierung Silberpulverablagerungen aufgetragen, die ein Muster bilden. Im nächsten Schritt werden die Silberablagerungen mittels Ultraschall- oder Reibschweißen verdichtet und bei entsprechender Temperatur gesintert. Das Sinterkissen entfernt die Oxidschicht und diffundiert in das Nichtedelmetall. Auf diese Weise vorbereitete Silberkissen eignen sich als sinterfähige Oberflächen für die nachfolgenden Sinterprozesse, wie in den vorangegangenen Beispielen beschrieben.First, silver powder deposits are applied to the base metallization to form a pattern. In the next step, the silver deposits are compacted using ultrasonic or friction welding and sintered at the appropriate temperature. The sintered pad removes the oxide layer and diffuses into the base metal. Silver pads prepared in this way are suitable as sinterable surfaces for the subsequent sintering processes, as described in the previous examples.
Erfindungsgemäß wird vorgeschlagen ein Verfahren zum Verbinden eines ersten elektronischen Bauelements mit einem zweiten elektronischen Bauelement unter Ausbildung einer elektrisch leitenden Verbindung zwischen dem ersten und dem zweiten elektronischen Bauelement durch Sintern eines zwischen dem ersten elektronischen Bauelement und dem zweiten elektronischen Bauelement angeordneten metallischen Sintermaterials, mit den Schritten: Befestigen wenigstens einer Mehrzahl von flächig auf einer Oberfläche eines der elektronischen Bauelemente verteilten Metallkörpern unter Belassen von zwischen den Metallkörpern angeordneten Freiräumen auf dem elektronischen Bauelement oder Befestigen eines sich in einer Ebene erstreckenden Metallkörpers auf dem elektronischen Bauelement, wobei der Metallkörper Abschnitte aufweist, die sich unter Belassen wenigstens eines zwischen den Abschnitten angeordneten Freiraums gegenüberliegend angeordnet sind, flächiges Aufbringen des Sintermaterials auf wenigstens einem der elektronischen Bauelemente, und Ausbilden einer elektrisch leitenden Verbindung zwischen der die Mehrzahl von Metallkörpern aufweisenden Oberfläche des einen elektronischen Bauelements mit dem anderen elektronischen Bauelement durch Sintern des Sintermaterials.According to the invention, a method is proposed for connecting a first electronic component to a second electronic component with the formation of an electrically conductive connection between the first and the second electronic component by sintering a metallic sintered material arranged between the first electronic component and the second electronic component, with the Steps: Fastening at least a plurality of metal bodies distributed flatly on a surface of one of the electronic components while leaving free spaces arranged between the metal bodies on the electronic component or fastening a metal body extending in a plane on the electronic component, the metal body having sections which are arranged opposite each other while leaving at least one free space arranged between the sections, planar application of the sintered material to at least one of the electronic components, and forming an electrically conductive connection between the surface of the one electronic component having the plurality of metal bodies and the other electronic component by sintering of the sintered material.
Bevorzugt ist das erste elektronische Bauelement ein Halbleiter, wobei das Befestigen der Metallkörper bevorzugt auf der Oberfläche des Halbleiters erfolgt.The first electronic component is preferably a semiconductor, the metal bodies preferably being fastened to the surface of the semiconductor.
Das zweite elektronische Bauelement hingegen ist bevorzugt ein Metallformkörper zum Ausbilden einer für die Kontaktierung mittels Drähten oder Bändchen geeigneten Kontaktfläche.The second electronic component, on the other hand, is preferably a shaped metal body for forming a contact surface suitable for contacting by means of wires or ribbons.
Insbesondere ist vorgesehen, dass das erste elektronische Bauelement und/oder das zweite elektronische Bauelement eine Oberfläche aufweisen, die aus einem unedlen Metall gebildet ist.In particular, it is provided that the first electronic component and / or the second electronic component have a surface which is formed from a base metal.
Speziell wird der Metallkörper auf einer oxidierten Oberfläche eines der elektronischen Bauteile befestigt, wobei die Metallkörper besonders bevorzugt aus einem Edelmetall gefertigt sind. Das Metall, das für die Metallkörper verwendet wird, ist insbesondere Gold oder Kupfer, weshalb beispielsweise Goldbumps bevorzugt sind.In particular, the metal body is attached to an oxidized surface of one of the electronic components, the metal bodies being particularly preferably made from a noble metal. The metal that is used for the metal bodies is in particular gold or copper, which is why gold bumps, for example, are preferred.
Nach einer anderen bevorzugten Ausführungsform des Verfahrens werden die Metallkörper gleichmäßig über die Fläche der Oberfläche eines der elektronischen Bauteile verteilt angeordnet. Insbesondere werden die Metallkörper gitterförmig über die Oberfläche eines der elektronischen Bauteile verteilt.According to another preferred embodiment of the method, the metal bodies are arranged distributed uniformly over the area of the surface of one of the electronic components. In particular, the metal bodies are distributed in a grid-like manner over the surface of one of the electronic components.
Als Alternative zur Verwendung von Goldbumps kann der Metallkörper auch ein gebogener Kupferdraht sein, der speziell mäanderförmig geformt ist.As an alternative to using gold bumps, the metal body can also be a bent copper wire that is specially shaped to meander.
Vorzugsweise können die Metallkörper punktförmig auf der Oberfläche eines der elektronischen Bauteile befestigt werden.The metal bodies can preferably be fastened point-like on the surface of one of the electronic components.
Im Allgemeinen ist es bevorzugt, die Metallkörper mittels Thermosonic- oder Ultraschallbonden zu befestigen.In general, it is preferred to attach the metal bodies by means of thermosonic or ultrasonic bonding.
Schließlich wird auch eine elektronische Baugruppe vorgeschlagen, die ein erstes elektronisches Bauelement und ein zweites elektronisches Bauelement aufweist, das mit ersterem auf elektrisch leitende Weise mittels eines Sintermaterials und einer Vielzahl von Metallkörpern verbunden ist, die innerhalb des Sintermaterials flächig verteilt und mit einer Oberfläche eines der elektronischen Bauelemente verbunden sind, oder einem Metallkörper, der in dem Sintermaterial angeordnet und mit einer Oberfläche eines der elektronischen Bauelemente verbunden ist und Abschnitte aufweist, die einander gegenüberliegend angeordnet sind, wobei mindestens ein zwischen den Abschnitten angeordneter Zwischenraum beibehalten wird.Finally, an electronic assembly is also proposed which has a first electronic component and a second electronic component which is connected to the former in an electrically conductive manner by means of a sintered material and a multiplicity of metal bodies that are distributed over a large area within the sintered material and with a surface of one of the electronic components are connected, or a metal body which is arranged in the sintered material and bonded to a surface of one of the electronic components and has portions which are arranged opposite to each other with at least one gap arranged between the portions is maintained.
Vorzugsweise ist vorgesehen, dass der Metallkörper oder die Metallkörper innerhalb einer Schicht aus oxidiertem Material nahe der Oberfläche des elektronischen Bauteils angeordnet ist/sind und sich mit nicht-oxidiertem Material des Metallkörpers verbindet.It is preferably provided that the metal body or the metal body is / are arranged within a layer of oxidized material near the surface of the electronic component and connects to the non-oxidized material of the metal body.
Vorzugsweise ist vorgesehen, dass das erste elektronische Bauteil ein Halbleiter und das zweite elektronische Bauteil ein metallischer Formkörper zum Bilden einer elektrischen Verbindung mittels eines Drahtes oder eines Bändchens ist.It is preferably provided that the first electronic component is a semiconductor and the second electronic component is a metallic molded body for forming an electrical connection by means of a wire or a ribbon.
Insbesondere hat/haben das erste elektronische Bauteil und/oder das zweite elektronische Bauteil eine Oberfläche aus einem Nichtedelmetall.In particular, the first electronic component and / or the second electronic component has / have a surface made of a non-precious metal.
Es ist bevorzugt, dass der Metallkörper oder die Metallkörper der elektronischen Baugruppe aus einem Edelmetall hergestellt sind. Das Edelmetall ist insbesondere Gold oder Kupfer.It is preferable that the metal body or the metal bodies of the electronic assembly are made of a noble metal. The precious metal is in particular gold or copper.
Entsprechend einer ersten bevorzugten Ausführung können die Metallkörper als eine Vielzahl von Goldbumps ausgebildet sein.According to a first preferred embodiment, the metal bodies can be designed as a plurality of gold bumps.
Nach einer weiteren bevorzugten Ausführungsform ist der Metallkörper ein gebogener Kupferdraht. Der Kupferdraht ist besonders bevorzugt mäanderförmig ausgebildet.According to a further preferred embodiment, the metal body is a bent copper wire. The copper wire is particularly preferably designed in a meandering shape.
Im Folgenden wird die Erfindung anhand der beigefügten Zeichnungen und, besonders bevorzugt, anhand eines Ausführungsbeispiels näher beschrieben. Gezeigt ist wie folgt:
-
2 ist ein schematischer Schnitt, der die Wirkung der vorliegenden Erfindung darstellt; -
3 ist eine Draufsicht auf eine besonders bevorzugte Ausführungsform mit „Goldbumps“; -
4 ist eine Draufsicht auf eine weitere besonders bevorzugte Ausführungsform mit einem Kupferdraht; -
5 ist eine geschnittene Darstellung der Ausführungsform aus4 ; und -
6 zeigt den schematischen Ablauf des beanspruchten Verfahrens zur Verbindung eines ersten elektronischen Bauteils mit einem zweiten elektronischen Bauteil, wobei zwischen dem ersten und dem zweiten elektronischen Bauteil durch Sintern eines metallischen Sintermaterials, das zwischen dem ersten elektronischen Bauteil und dem zweiten elektronischen Bauteil angeordnet ist, eine elektrisch leitende Verbindung gebildet wird.
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2 Fig. 3 is a schematic section showing the effect of the present invention; -
3 is a plan view of a particularly preferred embodiment with "gold bumps"; -
4th Fig. 3 is a plan view of another particularly preferred embodiment with a copper wire; -
5 FIG. 3 is a sectional view of the embodiment from FIG4th ; and -
6th shows the schematic sequence of the claimed method for connecting a first electronic component to a second electronic component, wherein between the first and the second electronic component by sintering a metallic sintered material, which is arranged between the first electronic component and the second electronic component, an electrical conductive connection is formed.
Wie oben in
Wie in
In Schritt S 1 werden eine Vielzahl von Metallkörpern, die über die Fläche der Oberfläche eines der elektronischen Bauteile verteilt sind, wobei die zwischen den Metallkörpern auf dem elektronischen Bauteil angeordneten Zwischenräume beibehalten werden; oder ein Metallkörper, der sich in einer Ebene auf dem elektronischen Bauteil erstreckt, befestigt, wobei der Metallkörper Abschnitte aufweist, die einander gegenüberliegend in einer Ebene angeordnet sind, wobei mindestens ein zwischen den Abschnitten angeordneter Zwischenraum beibehalten wird.In step S 1, a plurality of metal bodies are distributed over the area of the surface of one of the electronic components, with the spaces between the metal bodies on the electronic component being maintained; or a metal body extending in a plane on the electronic component, the metal body having portions which are arranged opposite one another in a plane, with at least one gap arranged between the portions being maintained.
In Schritt
Schließlich wird in Schritt
Claims (24)
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
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DE102019124954.6A DE102019124954A1 (en) | 2019-09-17 | 2019-09-17 | Method for connecting a first electronic component to a second electronic component |
PCT/EP2020/074397 WO2021052752A1 (en) | 2019-09-17 | 2020-09-02 | Method for connecting a first electronic component with a second electronic component |
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JP2006202944A (en) * | 2005-01-20 | 2006-08-03 | Nissan Motor Co Ltd | Joining method and joining structure |
EP1916709A1 (en) * | 2006-06-05 | 2008-04-30 | Tanaka Kikinzoku Kogyo K.K. | Method of bonding |
US20170229415A1 (en) * | 2016-02-09 | 2017-08-10 | Kabushiki Kaisha Toshiba | Method of manufacturing semiconductor device having base and semiconductor element and semiconductor device |
US20190109084A1 (en) * | 2017-10-06 | 2019-04-11 | International Business Machines Corporation | Chip packages with sintered interconnects formed out of pads |
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JP3585244B2 (en) * | 1997-02-20 | 2004-11-04 | パレレック,インコーポレイテッド | Low temperature method and composition for conductor production |
JP2011071301A (en) * | 2009-09-25 | 2011-04-07 | Honda Motor Co Ltd | Joining method and joining body using metal nanoparticle |
DE102010021765B4 (en) * | 2010-05-27 | 2014-06-12 | Semikron Elektronik Gmbh & Co. Kg | Manufacturing method for the arrangement of two connection partners by means of a low-temperature pressure sintered connection |
JP6017880B2 (en) * | 2012-08-01 | 2016-11-02 | 京セラ株式会社 | Method for joining metal surfaces and method for producing semiconductor element mounting body using the same |
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Publication number | Priority date | Publication date | Assignee | Title |
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JP2006202944A (en) * | 2005-01-20 | 2006-08-03 | Nissan Motor Co Ltd | Joining method and joining structure |
EP1916709A1 (en) * | 2006-06-05 | 2008-04-30 | Tanaka Kikinzoku Kogyo K.K. | Method of bonding |
US20170229415A1 (en) * | 2016-02-09 | 2017-08-10 | Kabushiki Kaisha Toshiba | Method of manufacturing semiconductor device having base and semiconductor element and semiconductor device |
US20190109084A1 (en) * | 2017-10-06 | 2019-04-11 | International Business Machines Corporation | Chip packages with sintered interconnects formed out of pads |
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