JP2006202944A - Joining method and joining structure - Google Patents
Joining method and joining structure Download PDFInfo
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- JP2006202944A JP2006202944A JP2005012397A JP2005012397A JP2006202944A JP 2006202944 A JP2006202944 A JP 2006202944A JP 2005012397 A JP2005012397 A JP 2005012397A JP 2005012397 A JP2005012397 A JP 2005012397A JP 2006202944 A JP2006202944 A JP 2006202944A
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- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
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- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
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- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
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- H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
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- H01L2224/838—Bonding techniques
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- H01L2924/151—Die mounting substrate
- H01L2924/156—Material
- H01L2924/157—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2924/15738—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950 C and less than 1550 C
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Abstract
Description
本発明は、第一の物体と第二の物体とを接合する接合方法及び接合構造に関する。 The present invention relates to a joining method and a joining structure for joining a first object and a second object.
従来のはんだに代えて、金属ナノ粒子を用いて２つの部材を接合する電極配設基体とその接合方法に関する技術が下記特許文献１に記載されている。この技術では、平均直径１００ｎｍ以下の金属超微粒子の周囲を有機化合物で被覆することによって生成された金属ナノ粒子を、２つの部材の接合部に介在させ、加熱・焼成して接合させる。
また、下記非特許文献１においては、有機溶媒でコーティングしたＡｇナノ粒子からなるＡｇナノペーストを用いてＣｕの試験片どうしを面で接合し、その接合強度の測定と接合部の断面組織の観察を行っている。接合条件である温度と時間と加圧力を変化させて、接合部の強度を検討している。
Japanese Patent Application Laid-Open Publication No. 2003-228667 describes a technique related to an electrode-arranged base for joining two members using metal nanoparticles instead of conventional solder and a joining method thereof. In this technique, metal nanoparticles generated by coating the periphery of metal ultrafine particles having an average diameter of 100 nm or less with an organic compound are interposed in a joint between two members, and heated and fired to bond them.
In Non-Patent Document 1 below, Cu test pieces are joined on the surface using Ag nano paste made of Ag nanoparticles coated with an organic solvent, and the joint strength is measured and the cross-sectional structure of the joint is observed. It is carried out. The strength of the joint is examined by changing the joining conditions of temperature, time and applied pressure.
しかしながら、上記の方法を用いて２つの部材を大面積で接合する場合、金属ナノ粒子を被覆する有機保護膜やペースト化するための有機溶媒を揮発させることが接合面の中央付近では難しく、その結果、炭化物が接合層に残存し、接合部の強度劣化や電気的熱的特性の劣化を招いていた。すなわち、上記の方法は、従来のはんだやろう付けに比べ、大面積の接合には不向きであった。
本発明の目的は、大面積の接合に有利な接合方法及び接合構造を提供することにある。
However, when joining two members in a large area using the above method, it is difficult to volatilize the organic protective film covering the metal nanoparticles and the organic solvent for pasting in the vicinity of the center of the joint surface, As a result, the carbide remained in the bonding layer, resulting in deterioration of the strength of the bonded portion and deterioration of the electrothermal characteristics. That is, the above method is not suitable for joining large areas as compared with conventional soldering and brazing.
An object of the present invention is to provide a bonding method and a bonding structure that are advantageous for large-area bonding.
上記課題を解決するために、本発明は、第一の物体に設けられた第一の金属層と、第二の物体に設けられた第二の金属層との間に、多孔質金属層を介在させ、金属を含む有機系接合材を、前記第一の金属層及び第二の金属層と前記多孔質金属層との間に設置し、加熱して接合するという構成になっている。 In order to solve the above problems, the present invention provides a porous metal layer between a first metal layer provided on a first object and a second metal layer provided on a second object. An organic bonding material containing a metal is interposed between the first metal layer and the second metal layer and the porous metal layer, and is heated and bonded.
本発明によれば、大面積の接合に有利な接合方法及び接合構造を提供することができる。 ADVANTAGE OF THE INVENTION According to this invention, the joining method and joining structure advantageous to joining of a large area can be provided.
以下、図面を用いて本発明の実施の形態について詳細に説明する。なお、以下で説明する図面で、同一機能を有するものは同一符号を付け、その繰り返しの説明は省略する。
《第一の実施の形態》
図１（ａ）〜（ｄ）は、本発明の接合方法及び接合構造の第一の実施の形態を示す図であり、（ａ）は第一の物体と第二の物体とが接合された接合構造の全体断面図、（ｂ）は（ａ）の接合部（Ａ部）の拡大断面図、（ｃ）は多孔質金属層の内部の形状を示す平面図、（ｄ）は別の多孔質金属層の内部の形状を示す平面図である。
図１（ａ）、（ｂ）において、１は第一の物体である例えば半導体素子、１１は第一の金属（ここではＡｇ：銀）からなる第一の金属層、２１ａは第二の金属（ここではＣｕ：銅）からなる第二の物体である金属基板であるＣｕ基板、３は第三の金属（ここではＣｕ）からなる多孔質金属層であるＣｕポーラス板、４は平均直径が１００ｎｍ以下の第四の金属（ここではＡｇ）からなる超微粒子を有機系の溶媒中に分散させてなる金属ナノペーストであるＡｇナノペースト、（ｃ）、（ｄ）において、３１ａ、３１ｂはそれぞれＣｕポーラス板３の空孔である。
Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings. In the drawings described below, components having the same function are denoted by the same reference numerals, and repeated description thereof is omitted.
First embodiment
FIGS. 1A to 1D are diagrams showing a first embodiment of a joining method and a joining structure according to the present invention. FIG. 1A shows a first object and a second object joined together. (B) is an enlarged cross-sectional view of the joint portion (A) of (a), (c) is a plan view showing the internal shape of the porous metal layer, and (d) is another porous view. It is a top view which shows the shape inside a porous metal layer.
1A and 1B, 1 is a first object, for example, a semiconductor element, 11 is a first metal layer made of a first metal (here, Ag: silver), and 21a is a second metal. A Cu substrate which is a metal substrate which is a second object made of (here Cu: copper), 3 is a Cu porous plate which is a porous metal layer made of a third metal (here Cu), 4 is an average diameter In Ag nanopaste, which is a metal nanopaste in which ultrafine particles made of a fourth metal (here Ag) of 100 nm or less are dispersed in an organic solvent, (c) and (d), 31a and 31b are respectively This is a hole in the Cu porous plate 3.
〈部材の準備〉
まず、半導体素子１、Ｃｕ基板２１ａ、Ｃｕポーラス板３、Ａｇナノペースト４、を準備する。
〈半導体素子〉
半導体素子１はシリコン（Ｓｉ）からなり、該半導体素子１の裏面には、オーミック接続を取るためのチタン（Ｔｉ）層（図示省略）が形成され、その上に異種金属の拡散を防止するためのニッケル（Ｎｉ）層（図示省略）が形成され、最後に、第一の金属層１１であるＡｇ層が形成されている。
〈Ａｇナノペースト〉
Ａｇナノペーストとは、粒径が例えば約１０ｎｍ前後の銀からなるＡｇナノ粒子（第三の金属からなる超微粒子）からなり、その粒子の周囲を、有機保護膜によってコーティングした状態で溶媒に分散されたペースト状のものである。これに熱を加えて、ある温度になると溶媒や有機保護膜が分解され、揮発し、超微粒子である銀の表面が現れ、互いに焼結する原理を利用して接合材として機能させるものである。
〈金属ナノ粒子の接合原理〉
その基本的な原理は、材料によって違いはあるが、ナノレベルの粒子になるとその表面のエネルギーによってバルクの融点より低温で凝集し、焼結することが一般的に知られており、関連の文献に詳細が記載されている。従って、Ａｇナノペーストは、通常、銀の超微粒子が互いに結合することはなく、溶媒中で安定であり、熱処理によって有機物が揮発することによって銀が焼結することを利用した接着剤である。
〈多孔質金属層〉
多孔質金属層（多孔質金属板）として、例えば銅などの金属からなるＣｕポーラス板３を用いる。内部の形状は図１（ｃ）、（ｄ）に例示するような例えば角型、丸型、棒状などの空孔３１ａ、３１ｂが部分的に繋がった形状や、繊維状の金属が部分的につながった形状であっても構わない。また、空孔率も数％程度から数十％まで等いずれであっても構わない。ただし、Ａｇナノペースト４の有機物が接合面の外部へ揮発すべく面に平行な方向に空孔が繋がっている形状である必要がある。
〈金属基板〉
金属基板はＣｕからなるＣｕ基板２１ａを用いる。
<Preparation of parts>
First, the semiconductor element 1, Cu substrate 21a, Cu porous plate 3, and Ag nano paste 4 are prepared.
<Semiconductor element>
The semiconductor element 1 is made of silicon (Si), and a titanium (Ti) layer (not shown) for establishing ohmic connection is formed on the back surface of the semiconductor element 1 to prevent diffusion of dissimilar metals thereon. A nickel (Ni) layer (not shown) is formed, and finally, an Ag layer which is the first metal layer 11 is formed.
<Ag nano paste>
Ag nanopaste consists of Ag nanoparticles (ultrafine particles made of a third metal) made of silver having a particle size of about 10 nm, for example, and the periphery of the particles is dispersed in a solvent while being coated with an organic protective film. Pasted. When heat is applied to this, the solvent and the organic protective film are decomposed and volatilized at a certain temperature, and the surface of silver, which is an ultrafine particle, appears and functions as a bonding material by utilizing the principle of sintering each other. .
<Principle of joining metal nanoparticles>
Although its basic principle varies depending on the material, it is generally known that when it becomes nano-level particles, it aggregates and sinters at a temperature lower than the melting point of the bulk due to the energy of its surface. Details. Therefore, the Ag nanopaste is an adhesive utilizing the fact that silver ultrafine particles are not usually bonded to each other, are stable in a solvent, and silver is sintered by volatilization of organic substances by heat treatment.
<Porous metal layer>
As the porous metal layer (porous metal plate), for example, a Cu porous plate 3 made of a metal such as copper is used. The internal shape is, for example, a shape in which holes 31a and 31b such as square, round, and rod are partially connected as illustrated in FIGS. 1C and 1D, and a fibrous metal is partially It may be a connected shape. Also, the porosity may be anywhere from about several percent to several tens percent. However, it is necessary that the organic substance of the Ag nanopaste 4 has a shape in which pores are connected in a direction parallel to the surface so that the organic substance can volatilize outside the bonding surface.
<Metal substrate>
As the metal substrate, a Cu substrate 21a made of Cu is used.
〈接合方法〉
次に、それぞれの部材を用いて接合を行う。
まず、Ｃｕ基板２１ａ上の半導体素子１が実装される側の所定の面上にＡｇナノペースト４を、スクリーン印刷法を用いて厚みを一定にして塗布する。
次に、そのＡｇナノペースト４を塗布した面上に、Ｃｕポーラス板３の一方の面を設置する。
その後、Ｃｕポーラス板３の他方の面上に、再度、Ａｇナノペースト４を、スクリーン印刷法を用いて厚みを一定にして塗布する。
その後、裏面にＡｇ層（第一の金属層１１）を形成した半導体素子１を、裏面がＡｇナノペースト４と接着するように設置し、加熱する。例えば３００℃程度の加熱が適当である。こうすることで、Ａｇナノペースト４を構成する有機物に含まれる炭素によって、半導体素子１の裏面の第一の金属層１１であるＡｇ層の最表面、第四の金属であるＡｇナノペースト４のＡｇナノ粒子の最表面及び第三の金属からなるＣｕポーラス板３の最表面、並びに第二の金属からなるＣｕ基板２１ａの最表面は、酸化還元され、有機物の揮発によってＡｇナノ粒子が凝集し、互いに結合が始まる。また、有機物は、Ｃｕポーラス板３の内部を経由して接合面に平行な方向に接合面の外側へ揮発され易いため、加圧することなく確実なＡｇナノ粒子の凝集、焼結が可能となる。その結果、第一の物体である半導体素子１と、第二の物体であるＣｕ基板２１ａとが、Ｃｕポーラス板３を挟んで、Ａｇの接合層によって接合された構造が完成する。
<Join method>
Next, it joins using each member.
First, Ag nano paste 4 is applied to a predetermined surface on the Cu substrate 21a on the side where the semiconductor element 1 is mounted with a constant thickness using a screen printing method.
Next, one surface of the Cu porous plate 3 is placed on the surface to which the Ag nanopaste 4 is applied.
Thereafter, the Ag nano paste 4 is again applied on the other surface of the Cu porous plate 3 with a constant thickness using a screen printing method.
Thereafter, the semiconductor element 1 having the Ag layer (first metal layer 11) formed on the back surface is placed and heated so that the back surface adheres to the Ag nano paste 4. For example, heating at about 300 ° C. is appropriate. By doing so, the outermost surface of the Ag layer, which is the first metal layer 11 on the back surface of the semiconductor element 1, and the Ag nano paste 4, which is the fourth metal, are contained in the organic matter constituting the Ag nano paste 4. The outermost surface of the Ag nanoparticles, the outermost surface of the Cu porous plate 3 made of the third metal, and the outermost surface of the Cu substrate 21a made of the second metal are oxidized and reduced, and Ag nanoparticles are aggregated by the volatilization of organic substances. , The bond starts with each other. In addition, since the organic substance is easily volatilized to the outside of the joint surface in the direction parallel to the joint surface through the inside of the Cu porous plate 3, it is possible to reliably aggregate and sinter Ag nanoparticles without applying pressure. . As a result, a structure in which the semiconductor element 1 as the first object and the Cu substrate 21a as the second object are joined by the Ag joining layer with the Cu porous plate 3 interposed therebetween is completed.
以上説明したように本実施の形態の接合方法は、第一の物体の第一の金属からなる第一の金属層１１と、第二の物体の第二の金属からなる第二の金属層である例えばＣｕ基板２１ａとの間に、内部に空孔を有し、第三の金属からなる多孔質金属層である例えばＣｕポーラス板３を介在させ、金属を含む有機系接合材を、第一の金属層１１とＣｕポーラス板３との間、及びＣｕ基板２１ａとＣｕポーラス板３との間に設置し、加熱して接合するという構成になっている。
まず、金属ナノペーストを用いた場合の基本的な効果は、上記従来例でも記述のあるとおり、有機系の溶媒に分散させた金属ナノペーストは、有機系の溶媒や保護膜をある温度で揮発させると、第四の金属からなるナノ粒子を含むそれぞれの金属は互いに直接接触してナノ粒子特有の低温での焼結が開始される。これにより、超微粒子を構成する第四の金属からなる接合層を形成するとともに、半導体素子１の表面の第一の金属層１１と第二の金属層からなるＣｕ基板２１ａとを接合することができる。従って、比較的低温で接合できる上に、それ以上の温度、例えば超微粒子を構成する第四の金属のバルク状態での融点まで使用することができる。このことは、同一部品に対してこの接合材料は何度でも使用できることを意味しており、高温はんだと共晶はんだを２ステップで用いている従来の工程に対しても、同一の金属ナノペーストのみを使用することで代替可能である。
上記のように第一の物体と第二の物体との間に内部に空孔を有する多孔質金属層を介在させて、金属を含む有機系接合材を第一の物体と多孔質金属層との間及び第二の物体と多孔質金属層との間に設置し、これらを加熱して接合することにより、多孔質金属層内を有機物の揮発経路として用いることで接合面の中央付近でも十分に有機物の揮発が可能となり、接合時に加圧することなく、高強度でかつ電気的、熱的にも最も良好な接合を達成することができる。また、この構造により、第一の物体と第二の物体が熱膨張係数の異なる異種材料の場合、その接合部に発生する熱応力による接合部のクラックを多孔質金属層内で止めることができる。
As described above, the bonding method of the present embodiment includes the first metal layer 11 made of the first metal of the first object and the second metal layer made of the second metal of the second object. For example, a Cu porous plate 3, which is a porous metal layer made of a third metal, is interposed between the Cu substrate 21 a and an organic bonding material containing a metal, It installs between the metal layer 11 and the Cu porous plate 3, and between the Cu substrate 21a and the Cu porous plate 3, and is heated and joined.
First, the basic effect of using metal nanopaste is that, as described in the previous example, metal nanopaste dispersed in an organic solvent volatilizes an organic solvent or protective film at a certain temperature. Then, the respective metals including the nanoparticles made of the fourth metal come into direct contact with each other, and sintering at a low temperature peculiar to the nanoparticles is started. Thus, a bonding layer made of the fourth metal constituting the ultrafine particles can be formed, and the first metal layer 11 on the surface of the semiconductor element 1 and the Cu substrate 21a made of the second metal layer can be bonded. it can. Accordingly, the bonding can be performed at a relatively low temperature, and a temperature higher than that, for example, the melting point in the bulk state of the fourth metal constituting the ultrafine particles can be used. This means that this bonding material can be used any number of times for the same component, and the same metal nanopaste is used for the conventional process using high-temperature solder and eutectic solder in two steps. It is possible to substitute by using only.
As described above, the porous metal layer having pores is interposed between the first object and the second object, and the organic bonding material containing metal is formed between the first object and the porous metal layer. And between the second object and the porous metal layer, and by heating and bonding them, the inside of the porous metal layer can be used as a volatilization path for organic matter, even near the center of the joint surface In addition, the organic substance can be volatilized, and the best bonding can be achieved with high strength and electrical and thermal properties without applying pressure during bonding. Also, with this structure, when the first object and the second object are dissimilar materials having different thermal expansion coefficients, cracks in the joint due to thermal stress generated in the joint can be stopped in the porous metal layer. .
また、Ｃｕポーラス板３は、接合面に平行な方向に空孔が繋がっている。このような構造により、上記有機物の揮発を接合面に平行な方向により一層確実に達成することができる。
また、前記有機系接合材は、平均直径が１００ｎｍ以下の第四の金属からなる超微粒子を有機系溶媒中に分散させてなる金属ナノペースト、例えばＡｇナノペーストである。このような金属ナノペーストを用いて加熱接合する接合方法なので、より低温で接合することができ、その結果、接合時に生じる残留応力も緩和でき、信頼性の高い接合を達成できる。
また、第一の金属層１１の表面に、前記有機系接合材を用いて、予めＣｕポーラス板３の第一の面を加熱接合し、その後、Ｃｕポーラス板３の前記第一の面と対向する第二の面に、第二の金属層であるＣｕ基板２１ａを前記有機系接合材を用いて加熱接合する方法を取ってもよい。金属ナノペーストは有機物を揮発させる温度で一度接合が完了すると、その後、同じ温度をかけても接合部が溶解しないので、この接合方法が可能となる。このような構成によりＣｕポーラス板３の両面を同時に接合する必要がなく、上記効果をより簡易的にかつより正確に達成できる。
The Cu porous plate 3 has pores connected in a direction parallel to the joint surface. With such a structure, the volatilization of the organic substance can be more reliably achieved in a direction parallel to the bonding surface.
The organic bonding material is a metal nanopaste, for example, an Ag nanopaste, in which ultrafine particles made of a fourth metal having an average diameter of 100 nm or less are dispersed in an organic solvent. Since it is a joining method in which such metal nanopaste is used for heat joining, joining can be performed at a lower temperature. As a result, residual stress generated during joining can be alleviated, and highly reliable joining can be achieved.
In addition, the first surface of the Cu porous plate 3 is preliminarily heated and bonded to the surface of the first metal layer 11 using the organic bonding material, and then opposed to the first surface of the Cu porous plate 3. Alternatively, the Cu substrate 21a, which is the second metal layer, may be heated and bonded to the second surface using the organic bonding material. Once the metal nanopaste has been bonded once at the temperature at which the organic substance is volatilized, the bonded portion does not dissolve even when the same temperature is applied thereafter, so this bonding method becomes possible. With such a configuration, it is not necessary to join both surfaces of the Cu porous plate 3 at the same time, and the above effect can be achieved more simply and more accurately.
また、前記接合後、第一の物体と第二の物体とを接合面に対して垂直な方向に加圧し、前記多孔質金属層を圧縮して空孔を無くすようにしてもよい。このようにＣｕポーラス板３を圧縮し、空孔を無くすことができ、上記効果に加え、より電気的、熱的に良好な接合が達成できる。
また、本実施の形態の接合構造は、前記第一の物体は、二つの主面のうちの少なくとも一方の主面に、前記第一の金属層を有する面接合タイプの半導体素子１であり、前記第二の物体は、前記第二の金属層からなる金属基板である。これにより半導体装置の製造構造として、上記効果が得られる。
さらに、前記第一の金属、前記第二の金属、前記第三の金属、前記第四の金属は、金、銀、白金、銅、ニッケル、クロム、鉄、鉛、コバルトのうちのいずれかの金属、またはこれらの金属のうちの少なくとも一種を含む合金、またはこれら金属もしくは合金の混合物からなる。これにより有機系接合材に含まれる有機物による金属の酸化還元が可能であり、より正確に上記効果が得られる。
Further, after the joining, the first object and the second object may be pressurized in a direction perpendicular to the joining surface, and the porous metal layer may be compressed to eliminate voids. In this way, the Cu porous plate 3 can be compressed and voids can be eliminated, and in addition to the above effects, more electrical and thermal bonding can be achieved.
In the bonding structure of the present embodiment, the first object is a surface bonding type semiconductor element 1 having the first metal layer on at least one main surface of two main surfaces. The second object is a metal substrate made of the second metal layer. As a result, the above-described effects can be obtained as a semiconductor device manufacturing structure.
Furthermore, said 1st metal, said 2nd metal, said 3rd metal, and said 4th metal are either gold | metal | money, silver, platinum, copper, nickel, chromium, iron, lead, cobalt It consists of a metal, an alloy containing at least one of these metals, or a mixture of these metals or alloys. As a result, the metal can be oxidized / reduced by the organic substance contained in the organic bonding material, and the above-described effect can be obtained more accurately.
《第二の実施の形態》
図２は、本発明の第二の実施の形態の接合構造の全体断面図である。
図１に示した第一の実施の形態との違いは、本実施の形態においては、金属基板が、第五の金属であるＡｌ（アルミニウム）からなるＡｌ基板２２であり、その周囲にメッキや蒸着等を利用して第二の金属層としてＡｇ層２１ｂが形成されている点である。
すなわち、本実施の形態の接合構造は、前記第一の物体は、二つの主面のうちの少なくとも一方の主面に、前記第一の金属層を有する面接合タイプの半導体素子１であり、前記第二の物体は、第二の金属層であるＡｇ層２１ｂを少なくとも前記接合する側の表面に有する（ここではＡｌ基板２２の全面に有する）、第五の金属からなるＡｌ基板２２である。これによって、Ａｌの塑性変形し易い特性を活かした接合部の応力緩和が可能となると同時に、Ａｇナノペースト４を用いた上記接合方法及び接合構造も達成可能となる。また、半導体装置の製造構造として、上記効果が得られる。その他の構成、接合方法、作用、効果は第一の実施の形態と同様である。
<< Second Embodiment >>
FIG. 2 is an overall cross-sectional view of the joint structure according to the second embodiment of the present invention.
The difference from the first embodiment shown in FIG. 1 is that in this embodiment, the metal substrate is an Al substrate 22 made of Al (aluminum), which is the fifth metal, and the periphery thereof is plated or The
That is, the bonding structure of the present embodiment is the surface bonding type semiconductor element 1 in which the first object has the first metal layer on at least one main surface of two main surfaces. The second object is an Al substrate 22 made of a fifth metal having an
《第三の実施の形態》
図３は、本発明の第三の実施の形態の接合構造の全体断面図である。
図２に示した第二の実施の形態との違いは、金属基板であるＡｌ基板２２に絶縁板２３が予め接合されている点である。例えば、絶縁板２３は、窒化アルミニウム（ＡｌＮ）や窒化珪素（ＳｉＮ）等のセラミックスからなる。すなわち、本実施の形態の接合構造は、前記第一の物体は、二つの主面のうちの少なくとも一方の主面に、前記第一の金属層を有する面接合タイプの半導体素子１であり、前記第二の物体は、Ａｌ基板２２と絶縁板２３とを有する金属付き絶縁基板２４である。なお、第二の実施の形態と同様に、Ａｌ基板２２の少なくとも前記接合する側の表面には、第二の金属層であるＡｇ層２１ｂを有する（ここではＡｌ基板２２の全面に有する）。
このような構成によって、半導体装置の製造構造として、上記効果が得られる。その他の構成、接合方法、作用、効果は第一の実施の形態と同様である。さらに、本実施の形態では、半導体素子１が接合される側のＡｌ基板２２と、絶縁板２３を挟んで反対側のＡｌ基板２２とは、絶縁板２３によって完全に絶縁されており、半導体装置としての絶縁性も確保することが可能となる。
<< Third embodiment >>
FIG. 3 is an overall cross-sectional view of the joint structure according to the third embodiment of the present invention.
The difference from the second embodiment shown in FIG. 2 is that an insulating plate 23 is bonded in advance to an Al substrate 22 which is a metal substrate. For example, the insulating plate 23 is made of a ceramic such as aluminum nitride (AlN) or silicon nitride (SiN). That is, the bonding structure of the present embodiment is the surface bonding type semiconductor element 1 in which the first object has the first metal layer on at least one main surface of two main surfaces. The second object is an insulating substrate 24 with metal having an Al substrate 22 and an insulating plate 23. Note that, similarly to the second embodiment, at least the surface of the Al substrate 22 on the side to be joined has an
With such a configuration, the above-described effect can be obtained as a semiconductor device manufacturing structure. Other configurations, joining methods, operations, and effects are the same as those in the first embodiment. Furthermore, in the present embodiment, the Al substrate 22 on the side to which the semiconductor element 1 is bonded and the Al substrate 22 on the opposite side across the insulating plate 23 are completely insulated by the insulating plate 23, and the semiconductor device It is also possible to ensure insulation as.
なお、以上説明した実施の形態は、本発明の理解を容易にするために記載されたものであって、本発明を限定するために記載されたものではない。したがって、上記実施の形態に開示された各要素は、本発明の技術的範囲に属する全ての設計変更や均等物をも含む趣旨である。例えば、以上の実施の形態では、金属としてＡｇやＣｕやＡｌ等を用いたが、本発明はこれに限定されることなく、クレームに基づく接合方法及び接合構造によって同様な効果が得られる金属であればいずれであっても構わない。また、半導体素子１としては、Ｓｉを用いたが、その他のガリウム砒素（ＧａＡｓ）や炭化シリコン（ＳｉＣ）などであっても構わない。特に、本発明によって得られる効果である、Ａｇナノペーストを用いた低温接合による残留応力低減と、接合後の使用温度の高耐熱化と、Ａｌ基板による応力緩和を有効に活用できる用途として、高耐熱素子として有望なＳｉＣの高温使用に対する実装方法として最適であると言える。 The embodiment described above is described for facilitating the understanding of the present invention, and is not described for limiting the present invention. Therefore, each element disclosed in the above embodiment includes all design changes and equivalents belonging to the technical scope of the present invention. For example, in the above embodiment, Ag, Cu, Al, or the like is used as a metal. Any one is acceptable. Further, although Si is used as the semiconductor element 1, other gallium arsenide (GaAs) or silicon carbide (SiC) may be used. In particular, the effects obtained by the present invention include a reduction in residual stress due to low-temperature bonding using Ag nanopaste, an increase in heat resistance at the use temperature after bonding, and stress relief due to an Al substrate can be effectively utilized. It can be said that it is optimal as a mounting method for high-temperature use of SiC that is promising as a heat-resistant element.
１…半導体素子 ３…Ｃｕポーラス板
４…Ａｇナノペースト １１…第一の金属層
２１ａ…Ｃｕ基板 ２１ｂ…Ａｇ層
２２…Ａｌ基板 ２３…絶縁板
２４…金属付き絶縁基板 ３１ａ、３１ｂ…空孔
DESCRIPTION OF SYMBOLS 1 ... Semiconductor element 3 ... Cu porous board 4 ... Ag nanopaste 11 ... 1st metal layer 21a ... Cu board |
Claims (7)
金属を含む有機系接合材を、前記第一の金属層と前記多孔質金属層との間、及び第二の金属層と前記多孔質金属層との間に設置し、
加熱して接合することを特徴とする接合方法。 Between the first metal layer made of the first metal of the first object and the second metal layer made of the second metal of the second object, there is a void inside and the third metal Interposing a porous metal layer consisting of
An organic bonding material containing a metal is installed between the first metal layer and the porous metal layer, and between the second metal layer and the porous metal layer,
A joining method characterized by heating and joining.
その後、前記多孔質金属層の前記第一の面と対向する第二の面に、第二の物体の第二の金属からなる第二の金属層を、前記有機系接合材を用いて加熱して接合することを特徴とする接合方法。 An organic system containing a metal on a surface of a first metal layer made of a first metal of a first object and having a first surface of a porous metal layer made of a third metal having pores therein in advance. Heat and bond using bonding material,
Thereafter, a second metal layer made of the second metal of the second object is heated on the second surface facing the first surface of the porous metal layer using the organic bonding material. Joining method characterized by joining.
二つの主面のうちの少なくとも一方の主面に、前記第一の金属層を有する面接合タイプの半導体素子であり、
前記第二の物体は、
前記第二の金属層からなる金属基板、
第二の金属層を少なくとも前記接合する側の表面に有し、第五の金属からなる金属基板、
または前記金属基板と絶縁板とを有する金属付き絶縁基板であることを特徴とする請求項１乃至５のいずれか記載の接合方法によって接合された接合構造。 The first object is
A surface junction type semiconductor element having the first metal layer on at least one main surface of two main surfaces,
The second object is
A metal substrate comprising the second metal layer;
A metal substrate having a second metal layer on at least the surface to be joined and made of a fifth metal;
The bonding structure bonded by the bonding method according to claim 1, wherein the bonding structure is a metal-attached insulating substrate having the metal substrate and an insulating plate.
金、銀、白金、銅、ニッケル、クロム、鉄、鉛、コバルトのうちのいずれかの金属、またはこれらの金属のうちの少なくとも一種を含む合金、またはこれら金属もしくは合金の混合物からなることを特徴とする請求項６記載の接合構造。 The first metal, the second metal, the third metal, and the fourth metal are:
It is made of any metal of gold, silver, platinum, copper, nickel, chromium, iron, lead, cobalt, an alloy containing at least one of these metals, or a mixture of these metals or alloys The joint structure according to claim 6.
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