DE102015215759B4 - A method for producing a contacting device on a ceramic substrate and a contacting device produced by the method - Google Patents

A method for producing a contacting device on a ceramic substrate and a contacting device produced by the method Download PDF

Info

Publication number
DE102015215759B4
DE102015215759B4 DE102015215759.8A DE102015215759A DE102015215759B4 DE 102015215759 B4 DE102015215759 B4 DE 102015215759B4 DE 102015215759 A DE102015215759 A DE 102015215759A DE 102015215759 B4 DE102015215759 B4 DE 102015215759B4
Authority
DE
Germany
Prior art keywords
contact element
substrate
connection
electrical
contacting device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
DE102015215759.8A
Other languages
German (de)
Other versions
DE102015215759A1 (en
Inventor
Felix Roesner
Andreas Burghardt
Christian Galka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Robert Bosch GmbH
Original Assignee
Robert Bosch GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Robert Bosch GmbH filed Critical Robert Bosch GmbH
Priority to DE102015215759.8A priority Critical patent/DE102015215759B4/en
Publication of DE102015215759A1 publication Critical patent/DE102015215759A1/en
Application granted granted Critical
Publication of DE102015215759B4 publication Critical patent/DE102015215759B4/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
    • H01L21/4814—Conductive parts
    • H01L21/4846—Leads on or in insulating or insulated substrates, e.g. metallisation
    • H01L21/4867—Applying pastes or inks, e.g. screen printing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/12—Mountings, e.g. non-detachable insulating substrates
    • H01L23/14—Mountings, e.g. non-detachable insulating substrates characterised by the material or its electrical properties
    • H01L23/15—Ceramic or glass substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/30—Assembling printed circuits with electric components, e.g. with resistor
    • H05K3/32—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits
    • H05K3/328—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by welding
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/03—Manufacturing methods
    • H01L2224/035—Manufacturing methods by chemical or physical modification of a pre-existing or pre-deposited material
    • H01L2224/03505—Sintering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554—External layer
    • H01L2224/05599—Material
    • H01L2224/056—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/05617—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
    • H01L2224/05618—Zinc [Zn] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554—External layer
    • H01L2224/05599—Material
    • H01L2224/056—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/05617—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
    • H01L2224/05624—Aluminium [Al] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554—External layer
    • H01L2224/05599—Material
    • H01L2224/056—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/05638—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/05639—Silver [Ag] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554—External layer
    • H01L2224/05599—Material
    • H01L2224/056—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/05638—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/05647—Copper [Cu] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554—External layer
    • H01L2224/05599—Material
    • H01L2224/056—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/05638—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/05655—Nickel [Ni] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554—External layer
    • H01L2224/05599—Material
    • H01L2224/056—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/05663—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than 1550°C
    • H01L2224/05684—Tungsten [W] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/4501—Shape
    • H01L2224/45012—Cross-sectional shape
    • H01L2224/45015—Cross-sectional shape being circular
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45117—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
    • H01L2224/45118—Zinc (Zn) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45117—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
    • H01L2224/45124—Aluminium (Al) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45139—Silver (Ag) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45147—Copper (Cu) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45155—Nickel (Ni) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45163—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than 1550°C
    • H01L2224/45184—Tungsten (W) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/4847—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/48475—Connecting portions connected to auxiliary connecting means on the bonding areas, e.g. pre-ball, wedge-on-ball, ball-on-ball
    • H01L2224/48476—Connecting portions connected to auxiliary connecting means on the bonding areas, e.g. pre-ball, wedge-on-ball, ball-on-ball between the wire connector and the bonding area
    • H01L2224/48491—Connecting portions connected to auxiliary connecting means on the bonding areas, e.g. pre-ball, wedge-on-ball, ball-on-ball between the wire connector and the bonding area being an additional member attached to the bonding area through an adhesive or solder, e.g. buffer pad
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
    • H01L23/62—Protection against overvoltage, e.g. fuses, shunts
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/02—Bonding areas ; Manufacturing methods related thereto
    • H01L24/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L24/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L24/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00—Printed circuits
    • H05K1/02—Details
    • H05K1/03—Use of materials for the substrate
    • H05K1/0306—Inorganic insulating substrates, e.g. ceramic, glass
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/10—Details of components or other objects attached to or integrated in a printed circuit board
    • H05K2201/10227—Other objects, e.g. metallic pieces
    • H05K2201/10287—Metal wires as connectors or conductors
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
    • H05K2203/04—Soldering or other types of metallurgic bonding
    • H05K2203/049—Wire bonding
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/10—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern
    • H05K3/12—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using thick film techniques, e.g. printing techniques to apply the conductive material or similar techniques for applying conductive paste or ink patterns
    • H05K3/1283—After-treatment of the printed patterns, e.g. sintering or curing methods
    • H05K3/1291—Firing or sintering at relative high temperatures for patterns on inorganic boards, e.g. co-firing of circuits on green ceramic sheets

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Ceramic Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Electric Connection Of Electric Components To Printed Circuits (AREA)

Abstract

Verfahren zur Herstellung einer Kontaktierungsvorrichtung auf einem keramischen Substrat (201) umfassend• einen ersten Schritt (101) in dem ein Substrat (201) aus einem keramischen Material bereitgestellt wird, wobei auf oder im Substrat (201) eine elektrische Schaltung angeordnet ist, und• einen dritten Schritt (103) in dem ein Anschlusselement (206) bereitgestellt wird, und dadurch gekennzeichnet, dass• in einem zweiten Schritt (102) ein Kontaktelement (204) haftend auf einem lokal begrenzten, mit der Schaltung elektrisch verbundenen Kontaktierungsbereich auf einer Oberfläche (202) des Substrats (201), in einer Vertiefung (203) im Substrat (201) mittels eines maskenlosen kontinuierlichen Materialauftrags mit gleichzeitiger Aushärtung aufgebracht wird, wobei das Kontaktelement (204) mit einer Schichtdicke (205) erzeugt wird, deren Höhe größer als wenigstens eine laterale Ausdehnungsbreite des Kontaktelementes (204) ist, und• in einem vierten Schritt (104) das Anschlusselement (206) auf das Kontaktelement (204) mit einer Kraft angedrückt und das Kontaktelement (204) kurzzeitig aufgeschmolzen wird, wobei eine stoffschlüssige und elektrische Verbindung zwischen dem Anschlusselement (206) und dem Kontaktelement (204) erzeugt wird, so dass das Anschlusselement (206) durch das Kontaktelement (204) mit der elektrischen Schaltung elektrisch verbunden wird, wobei das Aufschmelzen durch ein Verschweißen des Anschlusselementes (206) mit dem Kontaktelement (204) erreicht wird.Method for producing a contacting device on a ceramic substrate (201) comprising: a first step (101) in which a substrate (201) made of a ceramic material is provided, an electrical circuit being arranged on or in the substrate (201), and a third step (103) in which a connection element (206) is provided, and characterized in that, in a second step (102), a contact element (204) adheres to a localized, electrically connected to the circuit contacting region on a surface ( 202) of the substrate (201), in a recess (203) in the substrate (201) by means of a maskless continuous material application is applied with simultaneous curing, wherein the contact element (204) is produced with a layer thickness (205) whose height is greater than at least a lateral expansion width of the contact element (204) is, and • in a fourth step (104) the Anschlußele pressed against the contact element (204) with a force and the contact element (204) is briefly melted, wherein a material-locking and electrical connection between the connection element (206) and the contact element (204) is generated, so that the connection element ( 206) is electrically connected by the contact element (204) with the electrical circuit, wherein the melting is achieved by welding the connection element (206) to the contact element (204).

Description

Das Verfahren betrifft eine Herstellung einer Kontaktierungsvorrichtung auf einem keramischen Substrat zur Kontaktierung einer elektrischen Schaltung sowie eine mittels des Verfahrens erzeugte Kontaktierungsvorrichtung.The method relates to a production of a contacting device on a ceramic substrate for contacting an electrical circuit as well as a contacting device produced by the method.

Stand der TechnikState of the art

Elektrische Schaltungen auf keramischen Substraten werden beispielsweise in der Leistungselektronik oder in Abgassensoren eingesetzt. Die keramischen Substrate sind für die dort auftretenden, hohen Temperaturen ausgelegt. Eine Herstellung von elektrischen Schaltungen auf keramischen Substraten in LTCC- oder HTCC-Technik erfolgt durch einen maskierten Siebdruck, wobei die keramischen Substrate mehrfach bedruckt und zwischengetrocknet werden. Bekannte, aber wenig verbreitete Alternativen zum Siebdruck sind das Pulversprühen und das Kaltgasspritzen (siehe die Schriften DE 10 2007 015 399 A1 und DE 10 2011 076 773 A1 ).Electrical circuits on ceramic substrates are used for example in power electronics or in exhaust gas sensors. The ceramic substrates are designed for the high temperatures occurring there. A production of electrical circuits on ceramic substrates in LTCC or HTCC technology is carried out by a masked screen printing, wherein the ceramic substrates are printed several times and dried between. Known, but less common alternatives to screen printing are powder spraying and cold gas spraying (see the publications DE 10 2007 015 399 A1 and DE 10 2011 076 773 A1 ).

Von DBC-Substraten bekannte elektrische Kontaktelemente mit einer Schichtdicke von z.B. 300 µm erlauben ein Laserschweißen von Anschlusselementen. Die elektrische Kontaktierung von Schaltungen auf keramischen Substraten erfolgt dagegen aufgrund der Schichtdicke der Kontaktelemente von z.B. 15 µm durch Bonddrähte, wie in der Schrift DE 10 2012 216 148 A1 beschrieben. Die Befestigung von Bonddrähten an den Kontaktelementen wird durch stoffschlüssiges Thermosonic-Ball-Wedge-Bonden oder das Ultraschall-Wedge-Wedge-Bonden erreicht. Beim Thermosonic-Ball-Wedge-Bonden wird das Bonddrahtende aufgeschmolzen. Am Wedge erfolgen bei beiden Bond-Arten Reibschweißprozesse, wobei eine Reibung unter einem Anpressdruck des Drahtes auf das Kontaktelement initiiert wird und gegebenenfalls eine zusätzliche Erwärmung erfolgt. Beim Bonden liegt demnach kein Aufschmelzen unterhalb der Oberfläche des Kontaktelementes vor.Electrical contact elements known from DBC substrates with a layer thickness of, for example, 300 μm allow laser welding of connection elements. The electrical contacting of circuits on ceramic substrates, however, takes place due to the layer thickness of the contact elements of eg 15 microns by bonding wires, as in the document DE 10 2012 216 148 A1 described. The attachment of bonding wires to the contact elements is achieved by cohesive Thermosonic ball wedge bonding or ultrasonic wedge-wedge bonding. With Thermosonic ball wedge bonding, the bond wire end is melted. Friction welding processes take place on the wedge in both types of bonding, whereby a friction is initiated under a contact pressure of the wire on the contact element and optionally an additional heating takes place. During bonding, therefore, there is no melting below the surface of the contact element.

Die Durchmesser von Bonddrähten sind kleiner als 100 µm, wodurch die Stromstärken eines Stromflusses zwischen einem Bonddraht und einem Kontaktelement begrenzt sind. Bei Bedarf an höheren Stromstärken bzw. niedrigeren Wiederständen werden Dickdraht-Bändchen oder mehrere parallele Bonddrähte zwischen zwei Komponenten eingesetzt.The diameters of bond wires are less than 100 microns, whereby the current strengths of a current flow between a bonding wire and a contact element are limited. If higher currents or lower resistances are required, thick-wire strips or several parallel bonding wires are used between two components.

Die Schrift DE 10 2011 084 303 A1 offenbart ein Verfahren zur Herstellung eines Trägers für eine leistungselektronische Baugruppe.The font DE 10 2011 084 303 A1 discloses a method of manufacturing a carrier for a power electronic assembly.

Das Dokument DE 10 2011 080 299 A1 offenbart ein Verfahren mit dem ein Schaltungsträger hergestellt wird.The document DE 10 2011 080 299 A1 discloses a method of making a circuit carrier.

Die Schrift DE 10 2010 055 266 A1 offenbart ein elektrisches Bauelement mit einem Chip und einem Kontaktanschluss.The font DE 10 2010 055 266 A1 discloses an electrical device having a chip and a contact terminal.

Offenbarung der ErfindungDisclosure of the invention

Die vorliegende Erfindung betrifft ein Verfahren zur Herstellung einer Kontaktierungsvorrichtung durch Aufbringen eines Kontaktelementes auf einem keramischen Substrat und Kontaktierung des Kontaktelementes mit einem Anschlusselement sowie eine durch das Verfahren hergestellte Kontaktierungsvorrichtung.The present invention relates to a method for producing a contacting device by applying a contact element on a ceramic substrate and contacting the contact element with a connection element and a contacting device produced by the method.

Das Verfahren beginnt mit einem ersten Schritt, in dem ein Substrat aus einem keramischen Material bereitgestellt wird, wobei auf oder im Substrat eine elektrische Schaltung angeordnet ist. In einem zweiten Schritt wird ein Kontaktelement haftend auf einem lokal begrenzten, mit der Schaltung elektrisch verbundenen Kontaktierungsbereich auf einer Oberfläche des Substrats aufgebracht. Der Auftrag erfolgt mittels eines maskenlosen, kontinuierlichen Materialauftrags mit gleichzeitiger Aushärtung. Dabei wird eine Schichtdicke größer als eine laterale Ausdehnungsbreite des Kontaktelementes realisiert. In einem dritten Schritt wird ein Anschlusselement bereitgestellt. In einem vierten Schritt wird das Anschlusselement auf das Kontaktelement mit einer Kraft angedrückt und das Kontaktelement kurzzeitig aufgeschmolzen. Dabei wird eine stoffschlüssige und elektrische Verbindung zwischen dem Anschlusselement und dem Kontaktelement erzeugt. Das Anschlusselement wird somit durch das Kontaktelement mit der elektrischen Schaltung elektrisch verbunden.The method begins with a first step, in which a substrate made of a ceramic material is provided, wherein an electrical circuit is arranged on or in the substrate. In a second step, a contact element is adhesively applied to a localized, electrically connected to the circuit contacting region on a surface of the substrate. The job is carried out by means of a maskless, continuous material application with simultaneous curing. In this case, a layer thickness greater than a lateral expansion width of the contact element is realized. In a third step, a connection element is provided. In a fourth step, the connection element is pressed onto the contact element with a force and the contact element is briefly melted. In this case, a cohesive and electrical connection between the connection element and the contact element is generated. The connection element is thus electrically connected by the contact element with the electrical circuit.

Das im vierten Schritt realisierte Aufschmelzen des Kontaktelementes ermöglicht einen gegenüber dem Bonden vergrößerten Querschnitt eines Anschlusselementes in der Kontaktierungsvorrichtung. Ein erhöhter Querschnitt des Anschlusselementes resultiert in einem niedrigeren elektrischen Widerstand und ermöglicht einen Stromfluss mit größerer Stromstärke ohne, dass es zu irreparablen Schäden oder einer Zerstörung des Kontaktelementes kommt. Bei gleicher Stromstärke bzw. gleichem Querschnitt des Anschlusselementes kann im Vergleich zu Dickdraht-Bändchen oder mehreren parallelen Bonddrähten durch die erhöhte Dicke des Anschlusselementes ein Flächenbedarf auf der Oberfläche des keramischen Substrates reduziert werden.The melting of the contact element realized in the fourth step allows an enlarged cross-section of a connection element in the contacting device compared to the bonding. An increased cross section of the connection element results in a lower electrical resistance and allows a current flow with greater current without causing irreparable damage or destruction of the contact element. With the same current intensity or the same cross-section of the connecting element can be reduced on the surface of the ceramic substrate in comparison to thick-wire tapes or multiple parallel bonding wires by the increased thickness of the connection element.

In einer alternativen Ausführung wird im zweiten Schritt das Kontaktelement auf der Oberfläche des Substrates in einer Vertiefung hergestellt.In an alternative embodiment, the contact element is produced on the surface of the substrate in a recess in the second step.

Zur Herstellung des Kontaktelementes im zweiten Schritt eignen sich 3D-Druckverfahren. Insbesondere geeignet sind die Verfahren 3D-Pulverbett-Druck, Inkjet-Druck, Fused Deposition Modeling mit Pulverfüllung, Laser Melting (SLM), Electron Beam Melting (EBM), Direct Metal Deposition (DMD) oder Stereolithographie. Es eignen sich außerdem das Kaltgasspritzen (cold gas spraying, CGS). Mit 3D-Druckverfahren kann im zweiten Schritt beispielsweise eine Schichtdicke des Kontaktelementes größer als 200 µm aufgebracht werden.For producing the contact element in the second step, 3D printing methods are suitable. Particularly suitable are the methods 3D Powder Bed Printing, Inkjet Printing, Fused Deposition Modeling with Powder Filling, Laser Melting (SLM), Electron Beam Melting (EBM), Direct Metal Deposition (DMD) or Stereolithography. Also suitable are cold gas spraying (CGS). In the second step, for example, a layer thickness of the contact element greater than 200 μm can be applied using 3D printing methods.

Im vierten Schritt kann das Aufschmelzen durch ein Verschweißen des Anschlusselementes mit dem Kontaktelement erreicht werden, wobei das Verschweißen durch Laserschweißen, Ultraschallschweißen oder Elektroschweißen erfolgt. Das Aufschmelzen durch Verschweißen ist nur mit den beschriebenen hohen Schichtdicken möglich.In the fourth step, the melting can be achieved by welding the connecting element to the contact element, wherein the welding is carried out by laser welding, ultrasonic welding or arc welding. Melting by welding is only possible with the described high layer thicknesses.

Die durch das Verfahren hergestellte elektrische Kontaktierungsvorrichtung umfasst ein keramisches Substrat, wobei auf oder im Substrat eine elektrische Schaltung angeordnet ist. Die Kontaktierungsvorrichtung umfasst außerdem ein Kontaktelement auf einer Oberfläche des Substrates. Das Kontaktelement weist eine Schichtdicke größer als eine laterale Ausdehnungsbreite des Kontaktelementes auf. Das Kontaktelement ist haftend auf einem lokal begrenzten, mit der Schaltung elektrisch verbundenen Kontaktierungsbereich auf der Oberfläche, angeordnet. Das Kontaktelement ist mit einem Anschlusselement stoffschlüssig und elektrisch verbunden, wobei das Kontaktelement und das Anschlusselement in Ihren Dimensionen für einen zerstörungsfreien, elektrischen Stromfluss mit einer Stromstärke von 40 A - 200 A ausgelegt sind. Bei einem hohen Stromfluss wird in der vorliegenden Erfindung deshalb im Vergleich zu mehreren, parallelen Bondverbindungen der Flächenbedarf der Kontaktierung reduziert.The electrical contacting device produced by the method comprises a ceramic substrate, wherein an electrical circuit is arranged on or in the substrate. The contacting device further comprises a contact element on a surface of the substrate. The contact element has a layer thickness greater than a lateral expansion width of the contact element. The contact element is adhesively disposed on a localized, electrically connected to the circuit contacting region on the surface. The contact element is materially and electrically connected to a connection element, wherein the contact element and the connection element are designed in their dimensions for a nondestructive, electrical current flow with a current of 40 A - 200 A. In the case of a high current flow, the area requirement of the contacting is therefore reduced in the present invention in comparison to a plurality of parallel bond connections.

Das Kontaktelement weist in einer bevorzugten Ausführungsform eine Schichtdicke zwischen 0,2 - 5 mm auf. Höhere Schichtdicken erlauben das Aufschmelzen durch Verschweißen.In a preferred embodiment, the contact element has a layer thickness between 0.2 and 5 mm. Higher layer thicknesses allow melting by welding.

Das Kontaktelement weist in einer weiteren, bevorzugten Ausführungsform auf der Oberfläche eine homogene Materialzusammensetzung in lateraler und vertikaler Richtung auf. Eine homogene Materialzusammensetzung resultiert in einem geringen elektrischen Widerstand.In a further preferred embodiment, the contact element has a homogeneous material composition in the lateral and vertical directions on the surface. A homogeneous material composition results in a low electrical resistance.

In einer alternativen Ausführungsform ist das Kontaktelement in einer Vertiefung in dem Substrat angeordnet. Das Anschlusselement kann auf das Kontaktelement in der Vertiefung angedrückt sowie stofflich und elektrisch verbunden werden. Während des vierten Schrittes kann das Metall in der Vertiefung aufgeschmolzen werden. Die Vertiefung umschließt während des Aufschmelzens das kurzzeitig flüssige Metall, so dass die Form des Kontaktelementes, insbesondere die Schichtdicke, auch beim Andrücken durch die Vertiefung erhalten bleibt oder definiert wird. In dieser Ausführungsform resultiert ein geringerer Flächenbedarf des Kontaktelementes, falls ohne Vertiefung das flüssige Metall auf der Oberfläche des keramischen Substrates während des Aufschmelzen und Andrückens im vierten Schritt zumindest leicht verläuft. Bei der Anordnung des Kontaktelementes in einer Vertiefung wird außerdem eine erhöhte Haftung des Kontaktelementes aufgrund der gesteigerten Kontaktfläche zum Substrat erreicht, wodurch beispielsweise auch die Stabilität gegenüber mechanischen Spannungen gesteigert werden kann.In an alternative embodiment, the contact element is arranged in a depression in the substrate. The connecting element can be pressed onto the contact element in the depression and connected materially and electrically. During the fourth step, the metal can be melted in the recess. During the melting process, the depression encloses the liquid metal which is for a short time, so that the shape of the contact element, in particular the layer thickness, is retained or defined even when it is pressed by the depression. In this embodiment results in a smaller area requirement of the contact element, if without recess the liquid metal on the surface of the ceramic substrate during the melting and pressing in the fourth step is at least slightly. In the arrangement of the contact element in a recess, an increased adhesion of the contact element due to the increased contact surface with the substrate is also achieved, whereby, for example, the stability to mechanical stresses can be increased.

Das Kontaktelement und/oder das Anschlusselement bestehen in einer vorteilhaften Ausführungsform der Erfindung aus einer Aluminium-, Zink-, Kupfer-, Nickel-, Wolfram- oder Silber-Legierung. Diese Metalle weisen eine relativ hohe elektrische Leitfähigkeit und einen für Metalle relativ niedrigen Schmelzpunkt auf, so dass sie in einem 3D-Druckverfahren leicht verarbeitet werden können.The contact element and / or the connection element consist in an advantageous embodiment of the invention of an aluminum, zinc, copper, nickel, tungsten or silver alloy. These metals have a relatively high electrical conductivity and a relatively low melting point for metals so that they can be easily processed in a 3D printing process.

Figurenlistelist of figures

  • 1 zeigt ein Flussdiagramm des erfindungsgemäßen Verfahrens. 1 shows a flowchart of the method according to the invention.
  • 2a zeigt einen Querschnitt eines Kontaktelementes mit einem Anschlusselement. 2a shows a cross section of a contact element with a connection element.
  • 2b zeigt einen Querschnitt eines alternativen Aufbaus eines Kontaktelementes mit einem Anschlusselement. 2 B shows a cross section of an alternative construction of a contact element with a connection element.

Ausführungsbeispieleembodiments

In 1 sind mittels eines Flussdiagramms die Schritte des erfindungsgemäßen Verfahrens dargestellt. In 2a und 2b ist jeweils eine Ausführungsform einer nach dem Verfahren erzeugten Kontaktierungsvorrichtung im Querschnitt dargestellt.In 1 are shown by means of a flow chart, the steps of the inventive method. In 2a and 2 B In each case, an embodiment of a contacting device produced by the method is shown in cross section.

Gemäß des Flussdiagramms in 1 wird in einem ersten Schritt 101 ein keramisches Substrat 201 bereitgestellt. In oder auf dem keramischen Substrat 201 ist eine elektrische Schaltung angeordnet (nicht dargestellt). In einem zweiten Schritt 102 wird ein Kontaktelement 204 haftend auf einem lokal begrenzten Kontaktierungsbereich auf einer Oberfläche 202 des Substrates 201 aufgetragen. Der Kontaktierungsbereich ist mit der Schaltung elektrisch verbunden. Die Auftragung des Kontaktelementes 204 auf der Oberfläche 202 des Substrates 201 erfolgt mittels eines maskenlosen kontinuierlichen Materialauftrags mit gleichzeitiger Aushärtung. Beispielsweise kann der Materialauftrag durch Aufschmelzen eines Metalls mittels eines Lasers und tröpfchenweiser Abscheidung oder durch Laser Melting (SLM) erfolgen. In dem zweiten Schritt 102 wird das Kontaktelement 204 mit einer Schichtdicke 205 größer als wenigstens einer lateralen Ausdehnungsbreite des Kontaktelementes 204 erzeugt. In einem dritten Schritt 104 wird das Anschlusselement 206 bereitgestellt. In einem vierten Schritt 104 wird das Anschlusselement 206 auf das Kontaktelement 204 mit einer Kraft angedrückt und das Kontaktelement 204 kurzzeitig aufgeschmolzen. Es wird eine stoffschlüssige und elektrische Verbindung zwischen dem Anschlusselement 206 und dem Kontaktelement 204 erzeugt, so dass das Anschlusselement 206 durch das Kontaktelement 204 mit der elektrischen Schaltung elektrisch verbunden wird.According to the flowchart in FIG 1 will be in a first step 101 a ceramic substrate 201 provided. In or on the ceramic substrate 201 an electrical circuit is arranged (not shown). In a second step 102 becomes a contact element 204 adhered to a localized contacting area on a surface 202 of the substrate 201 applied. The contacting region is electrically connected to the circuit. The application of the contact element 204 on the surface 202 of the substrate 201 takes place by means of a maskless continuous material application with simultaneous curing. For example, the material deposition can be carried out by melting a metal by means of a laser and droplet deposition or by laser melting (SLM). In the second step 102 will that contact element 204 with a layer thickness 205 greater than at least one lateral expansion width of the contact element 204 generated. In a third step 104 becomes the connecting element 206 provided. In a fourth step 104 becomes the connecting element 206 on the contact element 204 pressed with a force and the contact element 204 briefly melted. There is a cohesive and electrical connection between the connection element 206 and the contact element 204 generated, so that the connection element 206 through the contact element 204 is electrically connected to the electrical circuit.

In 2a ist ein Querschnitt einer nicht erfindungsgemäßen Kontaktierungsvorrichtung auf einem keramischen Substrates 201 abgebildet. In 2a is a cross section of a non-inventive contacting device on a ceramic substrate 201 displayed.

Ein Kontaktelement 204 ist auf einer Oberfläche 202 eines keramischen Substrates 201 angeordnet und mit einem Anschlusselement 206 stoffschlüssig und elektrisch verbunden. In oder auf dem keramischen Substrat 201 ist eine elektrische Schaltung angeordnet (nicht dargestellt). Das Anschlusselement 206 ist durch das Kontaktelement 204 mit der elektrischen Schaltung elektrisch verbunden. Das Kontaktelement 204 weist eine Schichtdicke 205 größer als 200 µm auf. Damit kann ein Strom mit einer Stromstärke größer als 40 A zwischen dem Anschlusselement 206 und der elektrischen Schaltung durch das Kontaktelement 204 geführt werden, ohne dass es zu irreparablen Schäden oder Zerstörung des Kontaktelementes 204 kommt.A contact element 204 is on a surface 202 a ceramic substrate 201 arranged and with a connection element 206 cohesively and electrically connected. In or on the ceramic substrate 201 an electrical circuit is arranged (not shown). The connection element 206 is through the contact element 204 electrically connected to the electrical circuit. The contact element 204 has a layer thickness 205 greater than 200 μm. This allows a current with a current greater than 40 A between the connection element 206 and the electrical circuit through the contact element 204 be guided, without causing irreparable damage or destruction of the contact element 204 comes.

2b zeigt die Anordnung des Anschlusselementes 206 und des Kontaktelementes 204 auf der Oberfläche 202 des keramischen Substrates 201, wobei das Kontaktelement 204 im Vergleich zur Darstellung in 2a in einer Vertiefung 203 der Oberfläche 202 des keramischen Substrates 201 angeordnet ist. Durch das Aufschmelzen während des vierten Schrittes 104 und das Andrücken des Anschlusselementes 206 in der Vertiefung 203 bleibt in dieser Ausführungsform die Form des Kontaktelementes 204 durch die Form der Vertiefung 203 definiert, d.h. ein seitliches Verlaufen und eine Reduktion der Schichtdicke 205 des Kontaktelementes 204 werden verhindert. 2 B shows the arrangement of the connection element 206 and the contact element 204 on the surface 202 of the ceramic substrate 201 , wherein the contact element 204 in comparison to the illustration in 2a in a depression 203 the surface 202 of the ceramic substrate 201 is arranged. By melting during the fourth step 104 and the pressing of the connection element 206 in the depression 203 remains in this embodiment, the shape of the contact element 204 through the shape of the depression 203 defined, ie a lateral bleeding and a reduction of the layer thickness 205 of the contact element 204 are prevented.

In einer weiteren Ausführungsform können mehrere Kontaktelemente 204 und/oder mehrere Anschlusselemente 206 auf dem keramischen Substrat 201 angeordnet sein.In a further embodiment, a plurality of contact elements 204 and / or several connection elements 206 on the ceramic substrate 201 be arranged.

In einer anderen Ausgestaltung können durch 3D-Druckverfahren auch auf oder im Substrat 201 elektrische Verbindungen mit hoher Schichtdicke, wie beispielsweise Leiterbahnen, von einem Punkt zu einem anderen Punkt realisiert werden. Dadurch kann der Leiterbahn-Querschnitt vergrößert werden und somit auf oder im Substrat bzw. in der elektrischen Schaltung ein hoher Strom fließen oder der Flächenbedarf der Leiterbahnen reduziert werden.In another embodiment, by 3D printing process on or in the substrate 201 high layer thickness electrical connections, such as tracks, can be realized from one point to another point. As a result, the conductor cross-section can be increased and thus flow on or in the substrate or in the electrical circuit, a high current or the surface area of the interconnects can be reduced.

Das beschriebene Verfahren erlaubt die Herstellung einer Kontaktierungsvorrichtung mit einem im Vergleich zum Bonden größeren Querschnitt des Anschlusselementes. Dadurch wird ein elektrischer Stromfluss mit einer Stromstärke größer als 40 A zwischen der elektrischen Schaltung auf dem keramischen Substrat und dem Anschlusselement ermöglicht. Eine derart ausgestaltete Kontaktierungsvorrichtung kann demnach für LTCC-basierte Schaltungen einer Leistungselektronik eingesetzt werden.The method described allows the production of a contacting device with a larger compared to the bonding cross-section of the connecting element. As a result, an electric current flow with a current greater than 40 A between the electrical circuit on the ceramic substrate and the connection element is made possible. Accordingly, a contacting device designed in this way can be used for LTCC-based power electronics circuits.

In einer alternativen Ausprägung der Erfindung kann durch die erfindungsgemäße Kontaktierungsvorrichtung Wärme zu oder von einer elektrischen Schaltung geleitet werden, weil die verwendeten metallischen Materialien zur elektrischen Verbindung auch gute Wärmeleiter sind. Dadurch kann eine verbesserte Kühlung der elektrischen Schaltung erzielt werden. Eine verbesserte Kühlung von Leistungselektroniken kann deren Effizienz steigern.In an alternative embodiment of the invention, heat can be conducted to or from an electrical circuit by the contacting device according to the invention, because the metallic materials used for electrical connection are also good heat conductors. As a result, an improved cooling of the electrical circuit can be achieved. Improved cooling of power electronics can increase their efficiency.

Das Kontaktelement 204 kann im zweiten Schritt 102 vor oder nach einer Sinterung des keramischen Substrates 201 aufgebracht werden. Erfolgt das Aufbringen des Kontaktelementes 204 vor dem Sintern des keramischen Substrates 201 mit beispielsweise Inkjet oder Fused Deposition Modeling (FDM; deutsch: Schmelzschichtung), so wird das Sintern nach dem zweiten Schritt 102 realisiert. Diese alternative Ausführung des Verfahrens erlaubt eine höhere Schichtdicke 205 im Vergleich zum Aufbringen des Kontaktelementes 204 nach dem Sintern. Das Kontaktelementes 204 kann bei Auftrag vor dem Sintern aus einem metallischen Pulver und einem zusätzlichen, organischen Bindemittel bestehen. Das organische Bindemittel wird durch den zusätzlichen Sinter-Schritt entfernt. Erfolgt das Aufbringen des Kontaktelementes 204 im zweiten Schritt 102 nach dem Sintern des keramischen Substrates 201 mit beispielsweise Laser Melting (SLM) oder Direct Metal Deposition (DMD) ist für das Kontaktelement die Werkstoffauswahl größer, weil das Kontaktelement 204 somit nicht Temperaturen > 500 °C, welche zur Sinterung des keramischen Substrates notwendig sind, standhalten muss.The contact element 204 can in the second step 102 before or after sintering of the ceramic substrate 201 be applied. If the application of the contact element 204 before sintering the ceramic substrate 201 with, for example, inkjet or fused deposition modeling (FDM), then the sintering is after the second step 102 realized. This alternative embodiment of the method allows a higher layer thickness 205 in comparison to the application of the contact element 204 after sintering. The contact element 204 may consist of a metallic powder and an additional organic binder when applied before sintering. The organic binder is removed by the additional sintering step. If the application of the contact element 204 At the second step 102 after sintering the ceramic substrate 201 with for example Laser Melting (SLM) or Direct Metal Deposition (DMD), the material selection is greater for the contact element, because the contact element 204 Thus, not temperatures> 500 ° C, which are necessary for sintering of the ceramic substrate, must withstand.

Das Aufschmelzen des Kontaktelementes 204 im vierten Schritt 104 kann durch Laserschweißen, Ultraschallschweißen oder Elektroschweißen erfolgen, wobei diese Verfahren sich bezüglich des Aufschmelzgrades von dem Kontaktelement 204 unterscheiden.The melting of the contact element 204 in the fourth step 104 can be done by laser welding, ultrasonic welding or arc welding, these methods are with respect to the degree of melting of the contact element 204 differ.

Claims (5)

Verfahren zur Herstellung einer Kontaktierungsvorrichtung auf einem keramischen Substrat (201) umfassend • einen ersten Schritt (101) in dem ein Substrat (201) aus einem keramischen Material bereitgestellt wird, wobei auf oder im Substrat (201) eine elektrische Schaltung angeordnet ist, und • einen dritten Schritt (103) in dem ein Anschlusselement (206) bereitgestellt wird, und dadurch gekennzeichnet, dass • in einem zweiten Schritt (102) ein Kontaktelement (204) haftend auf einem lokal begrenzten, mit der Schaltung elektrisch verbundenen Kontaktierungsbereich auf einer Oberfläche (202) des Substrats (201), in einer Vertiefung (203) im Substrat (201) mittels eines maskenlosen kontinuierlichen Materialauftrags mit gleichzeitiger Aushärtung aufgebracht wird, wobei das Kontaktelement (204) mit einer Schichtdicke (205) erzeugt wird, deren Höhe größer als wenigstens eine laterale Ausdehnungsbreite des Kontaktelementes (204) ist, und • in einem vierten Schritt (104) das Anschlusselement (206) auf das Kontaktelement (204) mit einer Kraft angedrückt und das Kontaktelement (204) kurzzeitig aufgeschmolzen wird, wobei eine stoffschlüssige und elektrische Verbindung zwischen dem Anschlusselement (206) und dem Kontaktelement (204) erzeugt wird, so dass das Anschlusselement (206) durch das Kontaktelement (204) mit der elektrischen Schaltung elektrisch verbunden wird, wobei das Aufschmelzen durch ein Verschweißen des Anschlusselementes (206) mit dem Kontaktelement (204) erreicht wird.Method for producing a contacting device on a ceramic substrate (201) comprising: a first step (101) in which a substrate (201) made of a ceramic material is provided, an electrical circuit being arranged on or in the substrate (201), and a third step (103) in which a connection element (206) is provided, and characterized in that, in a second step (102), a contact element (204) adheres to a localized, electrically connected to the circuit contacting region on a surface ( 202) of the substrate (201), in a recess (203) in the substrate (201) by means of a maskless continuous material application is applied with simultaneous curing, wherein the contact element (204) is produced with a layer thickness (205) whose height is greater than at least a lateral expansion width of the contact element (204), and • in a fourth step (104) the connection pressed element (206) on the contact element (204) with a force and the contact element (204) is briefly melted, wherein a material-locking and electrical connection between the connection element (206) and the contact element (204) is generated, so that the connection element ( 206) is electrically connected by the contact element (204) with the electrical circuit, wherein the melting is achieved by welding the connection element (206) to the contact element (204). Verfahren nach Anspruch 1 dadurch gekennzeichnet, dass im zweiten Schritt (102) zur Herstellung des Kontaktelementes (204) eines der Verfahren 3D-Pulverbett-Druck, Inkjet-Druck, Fused Deposition Modeling mit Pulverfüllung, Laser Melting (SLM), Electron Beam Melting (EBM), Direct Metal Deposition (DMD), Stereolithographie oder Kaltgasspritzen (CGS) verwendet wird.Method according to Claim 1 characterized in that in the second step (102) for producing the contact element (204) one of the methods 3D powder bed printing, inkjet printing, fused deposition modeling with powder filling, laser melting (SLM), electron beam melting (EBM), Direct Metal Deposition (DMD), stereolithography or cold gas spraying (CGS) is used. Elektrische Kontaktierungsvorrichtung auf einem keramischen Substrat (201) umfassend µ ein keramisches Substrat (201), wobei auf oder im Substrat (201) eine elektrische Schaltung angeordnet ist, dadurch gekennzeichnet, dass die Kontaktierungsvorrichtung folgende Komponente aufweist • ein Kontaktelement (204) auf einer Oberfläche (202) des Substrates (201) in einer Vertiefung (203) in dem Substrat (201), wobei • die Schichtdicke (205) des Kontaktelementes (204) größer als eine laterale Ausdehnungsbreite des Kontaktelementes (204) ist, wobei das Kontaktelement (204) eine Schichtdicke (205) zwischen 0,2 - 5 mm aufweist, und • das Kontaktelement (204) auf der Oberfläche (202) haftend auf einem lokal begrenzten, mit der elektrischen Schaltung elektrisch verbundenen Kontaktierungsbereich angeordnet ist, und • das Kontaktelement (204) mit einem Anschlusselement (206) stoffschlüssig und elektrisch verbunden ist, und • das Kontaktelement (204) und das Anschlusselement (206) in den Abmessungen für einen zerstörungsfreien, elektrischen Stromfluss mit einer Stromstärke von 40 A - 200 A ausgelegt sind.Electrical contacting device on a ceramic substrate (201) comprising μ a ceramic substrate (201), wherein on or in the substrate (201) an electrical circuit is arranged, characterized in that the contacting device comprises the following component • a contact element (204) on a surface (202) of the substrate (201) in a recess (203) in the substrate (201), wherein • the layer thickness (205) of the contact element (204) is greater than a lateral expansion width of the contact element (204), wherein the contact element (204 ) has a layer thickness (205) between 0.2 - 5 mm, and • the contact element (204) on the surface (202) is adhesively disposed on a localized, electrically connected to the electrical circuit contacting region, and • the contact element (204 ) is materially and electrically connected to a connection element (206), and • the contact element (204) and the connection element (206) in The dimensions are designed for non-destructive, electrical current flow with a current of 40 A - 200 A. Elektrische Kontaktierungsvorrichtung auf einem keramischen Substrat (201) nach Anspruch 3 dadurch gekennzeichnet, dass das Kontaktelement (204) auf der Oberfläche (202) eine homogene Materialzusammensetzung in lateraler als auch vertikaler Richtung aufweist.Electrical contacting device on a ceramic substrate (201) according to Claim 3 characterized in that the contact element (204) on the surface (202) has a homogeneous material composition in lateral as well as vertical direction. Elektrische Kontaktierungsvorrichtung auf einem keramischen Substrat (201) nach einem der Ansprüche 3 oder 4 dadurch gekennzeichnet, dass das Kontaktelement (204) und/oder das Anschlusselement (206) aus einer Aluminium-, Zink-, Kupfer-, Nickel-, Wolfram- oder Silber-Legierung bestehen.Electrical contacting device on a ceramic substrate (201) according to one of Claims 3 or 4 characterized in that the contact element (204) and / or the connection element (206) consist of an aluminum, zinc, copper, nickel, tungsten or silver alloy.
DE102015215759.8A 2015-08-19 2015-08-19 A method for producing a contacting device on a ceramic substrate and a contacting device produced by the method Active DE102015215759B4 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
DE102015215759.8A DE102015215759B4 (en) 2015-08-19 2015-08-19 A method for producing a contacting device on a ceramic substrate and a contacting device produced by the method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE102015215759.8A DE102015215759B4 (en) 2015-08-19 2015-08-19 A method for producing a contacting device on a ceramic substrate and a contacting device produced by the method

Publications (2)

Publication Number Publication Date
DE102015215759A1 DE102015215759A1 (en) 2017-02-23
DE102015215759B4 true DE102015215759B4 (en) 2018-10-25

Family

ID=57961277

Family Applications (1)

Application Number Title Priority Date Filing Date
DE102015215759.8A Active DE102015215759B4 (en) 2015-08-19 2015-08-19 A method for producing a contacting device on a ceramic substrate and a contacting device produced by the method

Country Status (1)

Country Link
DE (1) DE102015215759B4 (en)

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102007015399A1 (en) 2007-03-30 2008-10-02 Robert Bosch Gmbh Method for producing a ceramic multilayer circuit arrangement and corresponding multilayer circuit arrangement
DE102010055266A1 (en) 2010-12-20 2012-06-21 Epcos Ag Electrical component i.e. microelectronic component, for creating operation voltage in LCD backlight unit in e.g. laptop, has chip for connecting arms to terminal, where surface of chip is arranged at retention device in non-contact manner
DE102011076773A1 (en) 2011-05-31 2012-12-06 Continental Automotive Gmbh Method for manufacturing integrated circuit e.g. MOSFET, involves attaching strip conductors of power section to strip conductor attachments by cold gas spraying process, and equipping power component space with power components
DE102011080299A1 (en) 2011-08-02 2013-02-07 Infineon Technologies Ag Circuit substrate for mounting semiconductor chip of e.g. semiconductor device, has filler metal that is partially filled in intermediate space provided between the ceramic materials
DE102011084303A1 (en) 2011-10-11 2013-04-11 Continental Automotive Gmbh Method for producing carrier for electronic power module, involves forming electrical connection between heavy-current conductor and sintered conductor
DE102012216148A1 (en) 2012-09-12 2014-04-03 Robert Bosch Gmbh Electronic circuit device for use in electronic commutated electromotor, has electrical conductive connection unit extending between electrical bonding surfaces and electrically connected with one another

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102007015399A1 (en) 2007-03-30 2008-10-02 Robert Bosch Gmbh Method for producing a ceramic multilayer circuit arrangement and corresponding multilayer circuit arrangement
DE102010055266A1 (en) 2010-12-20 2012-06-21 Epcos Ag Electrical component i.e. microelectronic component, for creating operation voltage in LCD backlight unit in e.g. laptop, has chip for connecting arms to terminal, where surface of chip is arranged at retention device in non-contact manner
DE102011076773A1 (en) 2011-05-31 2012-12-06 Continental Automotive Gmbh Method for manufacturing integrated circuit e.g. MOSFET, involves attaching strip conductors of power section to strip conductor attachments by cold gas spraying process, and equipping power component space with power components
DE102011080299A1 (en) 2011-08-02 2013-02-07 Infineon Technologies Ag Circuit substrate for mounting semiconductor chip of e.g. semiconductor device, has filler metal that is partially filled in intermediate space provided between the ceramic materials
DE102011084303A1 (en) 2011-10-11 2013-04-11 Continental Automotive Gmbh Method for producing carrier for electronic power module, involves forming electrical connection between heavy-current conductor and sintered conductor
DE102012216148A1 (en) 2012-09-12 2014-04-03 Robert Bosch Gmbh Electronic circuit device for use in electronic commutated electromotor, has electrical conductive connection unit extending between electrical bonding surfaces and electrically connected with one another

Also Published As

Publication number Publication date
DE102015215759A1 (en) 2017-02-23

Similar Documents

Publication Publication Date Title
DE102012215055B4 (en) Process for manufacturing a power semiconductor device
DE102014222819B4 (en) Power semiconductor contact structure with bonding buffer and method for its production
DE102013104739A1 (en) Metal-ceramic substrate and method for producing a metal-ceramic substrate
EP2743973A2 (en) Method for contacting a semiconductor element by welding a contact element to a sintered layer on the semiconductor element and semiconductor component with increased stability against thermomechanical influence
DE102009020733B4 (en) Process for the contact sintering of band-shaped contact elements
DE102007022337A1 (en) Sintered power semiconductor substrate and manufacturing method thereof
DE102015210458A1 (en) Method for connecting a conductor having a base metal with a copper-containing terminal element by means of welding and a connection arrangement produced thereby
WO2016030287A1 (en) Method for producing a soldered connection
WO2016146323A2 (en) Chip assembly and method for forming a contact connection
DE102013102540A1 (en) Metal-ceramic substrate, module arrangement and method for producing a metal-ceramic substrate
DE102017221778A1 (en) Heat sink for an electronic component, electronic assembly with such a heat sink and method for producing such a heat sink
DE102008041873A1 (en) LTCC substrate structure and method of making the same
DE102018207537A1 (en) Composite arrangement of three stacked joining partners
DE102015215759B4 (en) A method for producing a contacting device on a ceramic substrate and a contacting device produced by the method
WO2008080467A1 (en) Connection wire, method for producing such a wire, and structural component
EP1993132A2 (en) High performance semiconductor substrate with metal contact layer and corresponding production method
DE102019217386B4 (en) Method for producing an electronic assembly and the electronic assembly
EP2704194A1 (en) Semiconductor power module and method for manufacturing the same
DE102013102637B4 (en) Metal-ceramic substrate and method for producing such a metal-ceramic substrate and arrangement of such metal-ceramic substrates
DE102021117573B4 (en) Method of making an electrical connection to an electronic component and a chip assembly
DE102016225246B4 (en) Method of manufacturing an electronic component and electronic component
DE112020003541T5 (en) power semiconductor module
DE102019124954A1 (en) Method for connecting a first electronic component to a second electronic component
DE102011083911A1 (en) Electronic assembly with high-temperature-stable substrate base material
EP4369393A1 (en) Semiconductor device comprising a switchable semiconductor element and method of obtaining the same

Legal Events

Date Code Title Description
R012 Request for examination validly filed
R016 Response to examination communication
R016 Response to examination communication
R018 Grant decision by examination section/examining division
R020 Patent grant now final