JPS5712531A - Wire bonding method - Google Patents
Wire bonding methodInfo
- Publication number
- JPS5712531A JPS5712531A JP8706980A JP8706980A JPS5712531A JP S5712531 A JPS5712531 A JP S5712531A JP 8706980 A JP8706980 A JP 8706980A JP 8706980 A JP8706980 A JP 8706980A JP S5712531 A JPS5712531 A JP S5712531A
- Authority
- JP
- Japan
- Prior art keywords
- aluminum
- wire
- temperature
- resin coating
- elongation
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L24/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
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- H—ELECTRICITY
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- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
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- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/4501—Shape
- H01L2224/45012—Cross-sectional shape
- H01L2224/45015—Cross-sectional shape being circular
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45117—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
- H01L2224/45124—Aluminium (Al) as principal constituent
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- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
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- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
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- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
- H01L2224/852—Applying energy for connecting
- H01L2224/85201—Compression bonding
- H01L2224/85205—Ultrasonic bonding
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- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
- H01L2224/85909—Post-treatment of the connector or wire bonding area
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- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
- H01L2224/85909—Post-treatment of the connector or wire bonding area
- H01L2224/85948—Thermal treatments, e.g. annealing, controlled cooling
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- H01L2924/0001—Technical content checked by a classifier
- H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
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- H01L2924/01006—Carbon [C]
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- H01L2924/01013—Aluminum [Al]
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- H01L2924/01082—Lead [Pb]
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- H01L2924/013—Alloys
- H01L2924/014—Solder alloys
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- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
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- H—ELECTRICITY
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- H01L2924/30—Technical effects
- H01L2924/35—Mechanical effects
- H01L2924/351—Thermal stress
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Wire Bonding (AREA)
Abstract
PURPOSE:To improve the distortion-resisting strength of a fine Al wire, by taking such a process as to join the small Al lead wire, at first, and soften it by heating at a temperature below 400 deg. and above the aluminum recrystallizing temperature. CONSTITUTION:When the fine wire of hard aluminum is joined to an IC substrate by ultrasonic process and heated for a prescribed period of time at a temperature above approximately 150 deg.C (the aluminum recrystallizing temperature) and below the temperature at which aluminum becomes brittle due to rapid growth of the crystal (450 deg.C), while hardness and breakage strength of the aluminum wire becomes reduced by almost half, its elongation becomes doubled or higher. The heating temperature and diameter of the aluminum wire are to be carefully selected so that it would not be broken by molten resin at the time of resin coating. This is to be completed by soldering and the resin coating. As the thermal stress to be caused by the protective resin coating or passing of current can be absorbed and dissipated by thus composed aluminum wire as its elongation, it is possible to prevent breakage of the wire and improve reliability of a device.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP8706980A JPS5712531A (en) | 1980-06-26 | 1980-06-26 | Wire bonding method |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP8706980A JPS5712531A (en) | 1980-06-26 | 1980-06-26 | Wire bonding method |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5712531A true JPS5712531A (en) | 1982-01-22 |
Family
ID=13904647
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP8706980A Pending JPS5712531A (en) | 1980-06-26 | 1980-06-26 | Wire bonding method |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5712531A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2555813A1 (en) * | 1983-09-28 | 1985-05-31 | Hitachi Ltd | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SUCH A DEVICE |
US5153704A (en) * | 1982-03-10 | 1992-10-06 | Hitachi, Ltd. | Semiconductor device using annealed bonding wire |
-
1980
- 1980-06-26 JP JP8706980A patent/JPS5712531A/en active Pending
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5153704A (en) * | 1982-03-10 | 1992-10-06 | Hitachi, Ltd. | Semiconductor device using annealed bonding wire |
FR2555813A1 (en) * | 1983-09-28 | 1985-05-31 | Hitachi Ltd | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SUCH A DEVICE |
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