JPS55138246A - Manufacture of semicondoctor device - Google Patents

Manufacture of semicondoctor device

Info

Publication number
JPS55138246A
JPS55138246A JP4500879A JP4500879A JPS55138246A JP S55138246 A JPS55138246 A JP S55138246A JP 4500879 A JP4500879 A JP 4500879A JP 4500879 A JP4500879 A JP 4500879A JP S55138246 A JPS55138246 A JP S55138246A
Authority
JP
Japan
Prior art keywords
wire
joint
inner lead
lead wire
island
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP4500879A
Other languages
Japanese (ja)
Inventor
Kenji Miyajima
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP4500879A priority Critical patent/JPS55138246A/en
Publication of JPS55138246A publication Critical patent/JPS55138246A/en
Pending legal-status Critical Current

Links

Classifications

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Wire Bonding (AREA)

Abstract

PURPOSE:To obtain a highly reliable wire joint by a method wherein an inner lead wire containing copper by 90% or over is directly kept in touch with a gold wire, while blowing a non-oxidizing gas against the joint so as to keep the temperature at above 300 deg.C. CONSTITUTION:A semiconductor element 15 is temporarily fixed through the aid of a conductive epoxy adhesive agent 14 to an island of a lead frame 13 having the island 11 and a copper-coated inner lead wire 12, and the element is sent to a heat block so that the adhesive agent is hardened. Next, if a gold wire 17 is connected to the element 15 of the electrode and the inner lead wire 12, while blowing a hot N2 gas against the joint to heat it up at about 320-380 deg.C, a sure connection can be obtainable. Then, epoxy resin 18 is injected into the specified mold in order to seal the joint. By so doing, it is possible to obtain a highly reliable device with sure wire joints.
JP4500879A 1979-04-13 1979-04-13 Manufacture of semicondoctor device Pending JPS55138246A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP4500879A JPS55138246A (en) 1979-04-13 1979-04-13 Manufacture of semicondoctor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4500879A JPS55138246A (en) 1979-04-13 1979-04-13 Manufacture of semicondoctor device

Publications (1)

Publication Number Publication Date
JPS55138246A true JPS55138246A (en) 1980-10-28

Family

ID=12707336

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4500879A Pending JPS55138246A (en) 1979-04-13 1979-04-13 Manufacture of semicondoctor device

Country Status (1)

Country Link
JP (1) JPS55138246A (en)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56103433A (en) * 1980-01-21 1981-08-18 Toshiba Corp Wire bonding method
JPS57166040A (en) * 1981-04-06 1982-10-13 Sanyo Electric Co Ltd Wire bonding method for resin substrate
JPS57183044A (en) * 1981-05-07 1982-11-11 Oki Electric Ind Co Ltd Mounting method for lc and ic parts etc.
JPS58164234A (en) * 1982-03-25 1983-09-29 Toshiba Corp Wire bonding device for semiconductor
JPS5958833A (en) * 1982-09-28 1984-04-04 Shinkawa Ltd Semiconductor device
WO2011118247A1 (en) * 2010-03-25 2011-09-29 三洋電機株式会社 Bonding device and process for production of semiconductor device using same

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56103433A (en) * 1980-01-21 1981-08-18 Toshiba Corp Wire bonding method
JPS6349375B2 (en) * 1980-01-21 1988-10-04 Tokyo Shibaura Electric Co
JPS57166040A (en) * 1981-04-06 1982-10-13 Sanyo Electric Co Ltd Wire bonding method for resin substrate
JPS6359536B2 (en) * 1981-04-06 1988-11-21
JPS57183044A (en) * 1981-05-07 1982-11-11 Oki Electric Ind Co Ltd Mounting method for lc and ic parts etc.
JPS58164234A (en) * 1982-03-25 1983-09-29 Toshiba Corp Wire bonding device for semiconductor
JPH0345539B2 (en) * 1982-03-25 1991-07-11 Tokyo Shibaura Electric Co
JPS5958833A (en) * 1982-09-28 1984-04-04 Shinkawa Ltd Semiconductor device
JPH0141028B2 (en) * 1982-09-28 1989-09-01 Shinkawa Kk
WO2011118247A1 (en) * 2010-03-25 2011-09-29 三洋電機株式会社 Bonding device and process for production of semiconductor device using same

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