JPS57177538A - Manufacturing method for semiconductor device - Google Patents

Manufacturing method for semiconductor device

Info

Publication number
JPS57177538A
JPS57177538A JP6143881A JP6143881A JPS57177538A JP S57177538 A JPS57177538 A JP S57177538A JP 6143881 A JP6143881 A JP 6143881A JP 6143881 A JP6143881 A JP 6143881A JP S57177538 A JPS57177538 A JP S57177538A
Authority
JP
Japan
Prior art keywords
bonding
stretch
al2o3
external lead
wiring
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP6143881A
Other languages
Japanese (ja)
Inventor
Tetsuro Yanai
Masayoshi Ino
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Oki Electric Industry Co Ltd
Original Assignee
Oki Electric Industry Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Oki Electric Industry Co Ltd filed Critical Oki Electric Industry Co Ltd
Priority to JP6143881A priority Critical patent/JPS57177538A/en
Publication of JPS57177538A publication Critical patent/JPS57177538A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Abstract

PURPOSE:To greatly improve device reliability without deteriorating wire bonding property by a method wherein an Si3N4 film patch is left only around an external lead bonding portion of an Al wiring after tranformation of the Al surface into an Al2O3 film. CONSTITUTION:An Al wiring pattern 16 is provided on a MOSFET insulator film 13 and an Si3N4 mask 17 is formed on and around an external lead bonding stretch 18. The surface of the bonding stretch 18 is then subjected to oxidation for transformation into an Al2O3 layer 19. Next, after application of a protective layer 20, a window is provided in the bonding stretch 18. This construction, with the surface of the wiring pattern covered by Al2O3, resin potting does not cause water or impurities in the protective layer to corrode the wiring 16 and so device reliability is improved. The bonding stretch 18 is kept free of oxidation during the process of connecting an external lead thereto.
JP6143881A 1981-04-24 1981-04-24 Manufacturing method for semiconductor device Pending JPS57177538A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP6143881A JPS57177538A (en) 1981-04-24 1981-04-24 Manufacturing method for semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6143881A JPS57177538A (en) 1981-04-24 1981-04-24 Manufacturing method for semiconductor device

Publications (1)

Publication Number Publication Date
JPS57177538A true JPS57177538A (en) 1982-11-01

Family

ID=13171065

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6143881A Pending JPS57177538A (en) 1981-04-24 1981-04-24 Manufacturing method for semiconductor device

Country Status (1)

Country Link
JP (1) JPS57177538A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6278854A (en) * 1985-09-30 1987-04-11 Mitsubishi Electric Corp Formation of wiring material

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6278854A (en) * 1985-09-30 1987-04-11 Mitsubishi Electric Corp Formation of wiring material

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