JPS5792854A - Plastic molded type semiconductor device - Google Patents

Plastic molded type semiconductor device

Info

Publication number
JPS5792854A
JPS5792854A JP55168599A JP16859980A JPS5792854A JP S5792854 A JPS5792854 A JP S5792854A JP 55168599 A JP55168599 A JP 55168599A JP 16859980 A JP16859980 A JP 16859980A JP S5792854 A JPS5792854 A JP S5792854A
Authority
JP
Japan
Prior art keywords
layers
outside
corrosion resistance
leads
plating
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP55168599A
Other languages
Japanese (ja)
Other versions
JPS6227749B2 (en
Inventor
Hisaharu Sakurai
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP55168599A priority Critical patent/JPS5792854A/en
Publication of JPS5792854A publication Critical patent/JPS5792854A/en
Publication of JPS6227749B2 publication Critical patent/JPS6227749B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
    • H01L2224/48465—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation

Abstract

PURPOSE:To increase the number of times of effective bending and to enhance corrosion resistance of outside leads of a plastic molded type semiconductor device by a method wherein Ni plating layers on the outside leads are made thin sufficiently, and solder layers are accumulated thereon. CONSTITUTION:The Ni plating layer 3 is applied completely on a lead frame 1, a semiconductor element 7 is fixed on an island 1a and is connected 8 to be sealed with a package 9. After bending process is performed on the leads 4 protruded outside, the Ni plating layers 3 are etched to form suffciently thin (2mum or less) layers 3a, and the solder layers 10 are accumulated thereon. Because the inside of the package is covered with the thick Ni plating layer 3, it has superior corrosion resistance, and because flash of the package 9 can be removed when Ni plating of the outside leads is to be removed slightly by etching, the solder layers 10 can be formed completely on the outside surfaces of the outside leads to further corrosion resistance. By this constitution, because the Ni layers 3a of the outside lead parts are thin, the plastic molded type device having the increased number of times of effective bending and moreover having favorable corrosion resistance can be obtained.
JP55168599A 1980-11-29 1980-11-29 Plastic molded type semiconductor device Granted JPS5792854A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP55168599A JPS5792854A (en) 1980-11-29 1980-11-29 Plastic molded type semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP55168599A JPS5792854A (en) 1980-11-29 1980-11-29 Plastic molded type semiconductor device

Publications (2)

Publication Number Publication Date
JPS5792854A true JPS5792854A (en) 1982-06-09
JPS6227749B2 JPS6227749B2 (en) 1987-06-16

Family

ID=15871034

Family Applications (1)

Application Number Title Priority Date Filing Date
JP55168599A Granted JPS5792854A (en) 1980-11-29 1980-11-29 Plastic molded type semiconductor device

Country Status (1)

Country Link
JP (1) JPS5792854A (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57169265A (en) * 1981-04-10 1982-10-18 Hitachi Cable Ltd Lead frame for semiconductor
JPS59149042A (en) * 1983-02-15 1984-08-25 Hitachi Cable Ltd Lead frame for semiconductor
JPS63160367A (en) * 1986-12-24 1988-07-04 Hitachi Ltd Plastic-sealed semiconductor device
JPS6412563A (en) * 1987-07-07 1989-01-17 Sumitomo Metal Mining Co Nickel plating of lead frame
US5889317A (en) * 1997-04-09 1999-03-30 Sitron Precision Co., Ltd. Leadframe for integrated circuit package

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5036954A (en) * 1973-06-22 1975-04-07

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5036954A (en) * 1973-06-22 1975-04-07

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57169265A (en) * 1981-04-10 1982-10-18 Hitachi Cable Ltd Lead frame for semiconductor
JPS6258548B2 (en) * 1981-04-10 1987-12-07 Hitachi Cable
JPS59149042A (en) * 1983-02-15 1984-08-25 Hitachi Cable Ltd Lead frame for semiconductor
JPS63160367A (en) * 1986-12-24 1988-07-04 Hitachi Ltd Plastic-sealed semiconductor device
JPH0521343B2 (en) * 1986-12-24 1993-03-24 Hitachi Ltd
JPS6412563A (en) * 1987-07-07 1989-01-17 Sumitomo Metal Mining Co Nickel plating of lead frame
US5889317A (en) * 1997-04-09 1999-03-30 Sitron Precision Co., Ltd. Leadframe for integrated circuit package

Also Published As

Publication number Publication date
JPS6227749B2 (en) 1987-06-16

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