JPH02106059A - Lead frame and its manufacture - Google Patents
Lead frame and its manufactureInfo
- Publication number
- JPH02106059A JPH02106059A JP25988588A JP25988588A JPH02106059A JP H02106059 A JPH02106059 A JP H02106059A JP 25988588 A JP25988588 A JP 25988588A JP 25988588 A JP25988588 A JP 25988588A JP H02106059 A JPH02106059 A JP H02106059A
- Authority
- JP
- Japan
- Prior art keywords
- lead frame
- lead
- metal
- wire bonding
- flat bottom
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 13
- 229910052751 metal Inorganic materials 0.000 claims abstract description 51
- 239000002184 metal Substances 0.000 claims abstract description 51
- 229910052709 silver Inorganic materials 0.000 claims abstract description 15
- 230000002093 peripheral effect Effects 0.000 claims abstract description 11
- 229910052737 gold Inorganic materials 0.000 claims abstract description 9
- 229910052802 copper Inorganic materials 0.000 claims abstract description 8
- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 6
- 238000000034 method Methods 0.000 claims description 18
- 239000004065 semiconductor Substances 0.000 claims description 12
- 239000007788 liquid Substances 0.000 claims description 6
- 238000004381 surface treatment Methods 0.000 abstract description 7
- 239000007769 metal material Substances 0.000 abstract 2
- 238000007747 plating Methods 0.000 description 28
- 230000000740 bleeding effect Effects 0.000 description 9
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 6
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 6
- 239000004332 silver Substances 0.000 description 6
- 239000011888 foil Substances 0.000 description 5
- 238000009713 electroplating Methods 0.000 description 4
- 238000005530 etching Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 239000007779 soft material Substances 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 238000003754 machining Methods 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000002542 deteriorative effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000004090 dissolution Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000013508 migration Methods 0.000 description 1
- 230000005012 migration Effects 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 238000003672 processing method Methods 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000007738 vacuum evaporation Methods 0.000 description 1
- 239000012808 vapor phase Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
- H01L2224/491—Disposition
- H01L2224/4912—Layout
- H01L2224/49171—Fan-out arrangements
Landscapes
- Lead Frames For Integrated Circuits (AREA)
Abstract
Description
【発明の詳細な説明】
〈産業上の利用分野〉
本発明は、半導体集積回路（ＩＣ）に使用するリードフ
レームとその製造方法に関し、さらに詳しくは、確実性
高くボンディングを行うことができ、信頼性の高いリー
ドフレームとその製造方法に関する。DETAILED DESCRIPTION OF THE INVENTION <Field of Industrial Application> The present invention relates to a lead frame used in a semiconductor integrated circuit (IC) and a method for manufacturing the same. The present invention relates to a highly durable lead frame and its manufacturing method.
〈従来の技術〉
ＩＣ等を搭載するリードフレームにおいて、ワイヤボン
ディングを行うリード部先端部には、第３図に示すよう
に、ボンディングを確実に行わしめることを目的とし、
コイニング加工等のプレス加工により、ワイヤボンディ
ング部となる段差部７を設けている。 あるいは、エツ
チング加工により、段差部７を形成している。 この段
差部７と他の面６との段差１は、１０〜５０μｍ程度で
ある。<Conventional Technology> In a lead frame on which an IC or the like is mounted, the tip of the lead part to which wire bonding is performed is coated with a wire, as shown in Fig. 3, for the purpose of ensuring reliable bonding.
A step portion 7 that becomes a wire bonding portion is provided by press processing such as coining processing. Alternatively, the stepped portion 7 is formed by etching. The step difference 1 between the step portion 7 and the other surface 6 is about 10 to 50 μm.
以上の加工によりワイヤボンディング部となる段差部７
を形成後、その部分にＡｕ、Ａｇ等のめっきを施してい
るが、通常のめっき処理では、特定範囲のみをめっき処
理するために、めっきを必要とする部分に開孔を設けた
ゴム等の軟質材性のマスクを押し当て、このマスクによ
ってめっき液をシールし、めっきの位置を決める方法が
行われている。Through the above processing, the stepped portion 7 becomes the wire bonding portion.
After forming, the part is plated with Au, Ag, etc., but in normal plating processing, in order to plate only a specific area, a rubber plate with holes formed in the part that requires plating is used. A method is used in which a soft material mask is pressed against the plating solution to seal the plating solution and the plating position is determined.
しかし、このシール方法に用いるマスクは、０．５〜２
ｍｍ厚程度のゴム等による軟質材である場合が多く、こ
の軟質材を非めっき部分に押し付ける際の変形により、
寸法や位置がくるい、精度を低下させ、めっきのにじみ
やめっき不要部分へのめっき金属の付着等を生じるさせ
ている。However, the mask used for this sealing method is 0.5 to 2
In many cases, it is a soft material made of rubber or the like with a thickness of about mm, and due to deformation when pressing this soft material against a non-plated part,
The dimensions and position are incorrect, reducing accuracy and causing bleeding of the plating and adhesion of the plating metal to areas that do not need plating.
また、マスクとリードフレームの位置合わせには、マス
クに立てたピンをリードフレームのパイロットホールに
入れて行うことが多いが、各′部の加工誤差が累積し、
結果的には位置精度が低下してしまい、めっきのにじみ
ゃめっき不要部分へのめっき金属の付着等を生じさせて
いる。Additionally, when aligning the mask and lead frame, pins placed on the mask are often inserted into pilot holes in the lead frame, but machining errors at each section accumulate.
As a result, the positional accuracy decreases, causing plating metal to adhere to areas where plating is not required.
そこで、通常は、剥離液等を用い、めっきのにじみやめ
っき不要部分に付着しためっき金属を溶かすことによフ
て対応しているが、めっきが必要な特定部分のめっき金
属も同一速度で溶かしてしまうため、ある程度以上の厚
さのめっきのにじみや不要の付着めっき金属を完全に除
去することはできない。Normally, this is dealt with by using a remover or the like to dissolve the bleeding of the plating and the plating metal adhering to areas where plating is not required, but the plating metal on specific areas that require plating is also melted at the same speed. Therefore, it is not possible to completely remove the bleeding of plating over a certain thickness and unnecessary adhering plating metal.
〈発明が解決しようとする課題〉
上述のように、リードフレームのリード部先端部にある
ワイヤボンディング部のみを高い位置精度でめっき処理
を行うことは出来ず、その後に剥離液による処理を行っ
ても、めっきのにじみやめっき不要部分に付着しためっ
き金属の完全な除去は行い得ない。 しかし、めっきの
にじみや、めフき不要部分に付着しためっき金属は、リ
ードフレームが樹脂モールドされた後の半導体装置の信
頼性を著しく損ねる。<Problems to be Solved by the Invention> As mentioned above, it is not possible to plate only the wire bonding part at the tip of the lead part of the lead frame with high positional accuracy, and it is not possible to perform plating treatment with a stripping liquid after that. However, it is not possible to completely remove plating bleeding and plating metal adhering to areas where plating is not required. However, bleeding of the plating and plating metal adhering to areas that do not need to be plated significantly impairs the reliability of the semiconductor device after the lead frame is resin-molded.
即ち、モールド外のアクタ−リード部にめっき金属が付
着していると、いわゆるマイグレーション現象により、
リード間で短絡事故を８起し、一方、モールド内のイン
ナーリード部のワイヤボンディング部以外の部分に付着
しためっき金属は、モールド時、リードと樹脂との密着
性を損ね、耐湿性等を悪化させることが知られている。In other words, if plated metal adheres to the actor lead part outside the mold, the so-called migration phenomenon will occur.
8 short-circuit accidents occurred between leads, and on the other hand, plating metal adhering to parts other than the wire bonding part of the inner lead part in the mold impairs the adhesion between the leads and resin during molding, deteriorating moisture resistance etc. It is known to cause
従って、ワイヤボンディング部のみに位置精度良くめ
っぎを施すことは、非常に重要である。Therefore, it is very important to plate only the wire bonding portion with high positional accuracy.
本発明は、上記の事実に鑑みてなされたものであり、リ
ード部先端部のワイヤボンディング部以外には、めっき
等の方法で処理される処理金属の付着のないリードフレ
ームとその製造方法の提供を目的とする。The present invention has been made in view of the above-mentioned facts, and provides a lead frame and a method for manufacturing the same, in which no metal treated by plating or the like is attached to any part other than the wire bonding part at the tip of the lead part. With the goal.
く課題を解決するための手段〉
本発明は、半導体素子を搭載するタブ部と、リード部と
を有するリードフレームにおいて、リード部先端部に設
けられるワイヤボンディング部が、平坦底部とこれを包
囲する周壁で構成される陥凹部であって、該陥凹部が、
Ａｕ。Means for Solving the Problems> The present invention provides a lead frame having a tab portion on which a semiconductor element is mounted and a lead portion, in which a wire bonding portion provided at the tip of the lead portion surrounds the flat bottom portion. A recess formed of a peripheral wall, the recess comprising:
Au.
Ａｇ％Ｃｕ、ＡＩＬのうちから選ばれる少なくとも１種
の金属で表面処理されていることを特徴とするリードフ
レームを提供するものである。The present invention provides a lead frame characterized in that the surface is treated with at least one metal selected from Ag%Cu and AIL.
また、本発明は、半導体素子を搭載するタブ部と、リー
ド部とを有するリードフレームを製造するに際し、リー
ド部先端部に、平坦底部とこれを包囲する周壁で構成さ
れる陥凹部を形成し、該陥凹部を、Ａ ｕ 、 Ａ ｇ
ｓ Ｃｕ ％Ａ ｌｔのうちから選ばれる少なくとも
１種の金属で表面処理した後、該陥凹部以外の部分に付
着した不要の処理金属を、剥離液を用いて溶解すること
を特徴とするリードフレームの製造方法を提供するもの
である。Furthermore, when manufacturing a lead frame having a tab portion on which a semiconductor element is mounted and a lead portion, the present invention forms a recessed portion consisting of a flat bottom portion and a peripheral wall surrounding the flat bottom portion at the tip portion of the lead portion. , the recessed portion is A u , A g
A lead frame characterized in that after the surface is treated with at least one metal selected from s Cu % Al lt, unnecessary treated metal adhering to parts other than the recessed portion is dissolved using a stripping liquid. The present invention provides a method for manufacturing.
以下に、本発明の詳細な説明する。The present invention will be explained in detail below.
第１図は、本発明のリードフレーム１０の一実施例を示
す平面図である。FIG. 1 is a plan view showing an embodiment of a lead frame 10 of the present invention.
本発明のリードフレーム１０は、ＩＣ素子等を搭載する
タブ部４と、リード部１３とを有し、リード部１３のタ
ブ部４に近い位置にあるリード部先端部３には、ワイヤ
ボンディング部である陥凹部５が形成されているが、該
陥凹部は、Ａｕ、Ａｇ、Ｃｕ％Ａｊ２のうちから選ばれ
る少なくとも１種の金属で表面処理されている。 タブ
部４に搭載されたＩＣ素子１は、ボンディングワイヤ２
によって、ワイヤボンディング部５と電気的に接続され
る。The lead frame 10 of the present invention has a tab portion 4 on which an IC element or the like is mounted, and a lead portion 13, and a wire bonding portion is provided at the lead portion tip portion 3 of the lead portion 13 at a position close to the tab portion 4. A recessed portion 5 is formed, and the surface of the recessed portion is treated with at least one metal selected from Au, Ag, and Cu%Aj2. The IC element 1 mounted on the tab portion 4 is connected to the bonding wire 2
It is electrically connected to the wire bonding part 5 by.
本発明のリードフレーム１０の特徴は、ワイヤボンディ
ング部５が平坦底部とこれを包囲する周壁で構成される
陥凹部であって、該陥凹部５の少なくとも平坦底部が、
Ａｕ、Ａｇ、Ｃｕ％Ａ１のうちから選ばれる少なくとも
１ ｆｆｌの金属で表面処理されていることである。A feature of the lead frame 10 of the present invention is that the wire bonding portion 5 is a recessed portion composed of a flat bottom portion and a peripheral wall surrounding the flat bottom portion, and at least the flat bottom portion of the recessed portion 5 is
The surface is treated with at least 1 ffl of a metal selected from Au, Ag, and Cu%A1.
ワイヤボンディング部５の形状は、平坦な底部とこれを
包囲する周壁で構成される陥凹部であればよいが、金属
による表面処理やワイヤボンディングのし易さの点から
、例えば第２ａ図および第２ｂ図に示すように、四角形
や円形の平坦な底部を有する陥凹部が好ましい。The shape of the wire bonding portion 5 may be any shape as long as it is a recessed portion consisting of a flat bottom and a surrounding wall, but from the viewpoint of metal surface treatment and ease of wire bonding, for example, the shape shown in FIG. 2a and FIG. As shown in Figure 2b, a rectangular or circular recess with a flat bottom is preferred.
ワイヤボンディング部５の大きさは、リードフレーム１
０の大ぎさやビン数によって異なるが、平坦底部の四角
形の一辺ｎまたは円の直径ｎが、リード部先端部の幅ｍ
の５０％以上であることが好ましく、５０μｍ以上であ
ることが・好ましい。 段差りは、リードフレームを構
成している金属板の厚みＰの５％以上であることが好ま
しく、１０μｍ以上であることが好ましい。The size of the wire bonding part 5 is the same as that of the lead frame 1.
Although it varies depending on the size of the 0 and the number of bins, one side n of the rectangle on the flat bottom or the diameter n of the circle is the width m of the tip of the lead part.
It is preferable that it is 50% or more, and it is preferable that it is 50 μm or more. The step is preferably 5% or more of the thickness P of the metal plate constituting the lead frame, and preferably 10 μm or more.
また、ワイヤボンディング部５は、導電性を良くするた
めに、Ａｕ、Ａｇ、Ｃｕ％Ａｎのうちから選ばれる少な
くとも１種の金属で表面処理されているが、表面処理金
属り厚さは、機能とコストとの関係から、１〜２０μｍ
程度が好ましい。In addition, the wire bonding portion 5 is surface-treated with at least one metal selected from Au, Ag, and Cu%An to improve conductivity. From the relationship with cost, 1 to 20 μm
degree is preferred.
本発明のリードフレームは、いかなる方法で製造しても
よいが、以下に示す本発明の製造方法が好ましい。Although the lead frame of the present invention may be manufactured by any method, the following manufacturing method of the present invention is preferred.
本発明の方法によれば、リードフレーム１０は、リード
部先端部３に、平坦底部とこれを包囲する周壁で構成さ
れる陥凹部５を形成し、該陥凹部５を、Ａｕ、Ａｇ、、
Ｃｕ、Ａｌｌのうちから選ばれる少なくとも１種の金属
で表面処理した後、該陥凹部５周辺の処理金属のにじみ
部分や、該陥凹部５以外の部分に付着した不要の処理金
属を、剥離液を用いて溶解することによって製造される
。According to the method of the present invention, the lead frame 10 has a recess 5 formed at the tip end 3 of the lead portion, which is composed of a flat bottom and a peripheral wall surrounding the flat bottom, and the recess 5 is made of Au, Ag,
After the surface is treated with at least one metal selected from Cu and All, the bleeding part of the treated metal around the recessed part 5 and the unnecessary treated metal adhering to parts other than the recessed part 5 are removed using a stripping solution. It is manufactured by dissolving it using
陥凹部５の形成は、コイニング加工等のプレス加工また
はエツチング加工によるが、平坦性よく加工できるプレ
ス、加工が好ましい。The recessed portion 5 is formed by press processing such as coining processing or etching processing, but press processing and processing which can produce good flatness are preferred.
金属による表面処理は、電気めっき、溶融めっきのほか
、真空蒸着、スパッタリング、イオンブレーティング等
の真空めっきや気相めっき等の方法で行えばよいが、処
理金属の厚さの点から、電気めっき等の方法が好ましい
。Metal surface treatment can be performed by electroplating, hot-dip plating, vacuum plating such as vacuum evaporation, sputtering, ion blating, etc., or vapor phase plating, but due to the thickness of the treated metal, electroplating is not recommended. The following methods are preferred.
金属による表面処理の前段として、非処理部にマスクを
行う、 マスク開孔の大きさは、陥凹部５と同じ大きさ
、形状、あるいは陥凹部５よりもやや大ぎめとし、マス
クをシール状態に当接する。As a preliminary step to surface treatment with metal, mask the untreated area.The mask opening size is the same size and shape as the recessed part 5, or is slightly larger than the recessed part 5, and the mask is kept in a sealed state. come into contact with
この時、リードフレームとマスクとの位置合せはパイロ
ットビンを用いて行うが、注意深く合わせたとしても、
マスク開孔の加工誤差もあるので、合せ誤差を生じる。At this time, the lead frame and mask are aligned using a pilot bin, but even if carefully aligned,
There are also machining errors in the mask openings, resulting in alignment errors.
従って、陥凹部５を完全に金属で処理するためには、
マスクの開孔の大きさは、陥凹部５よりもやや大きめで
あることが好ましい。Therefore, in order to completely treat the recess 5 with metal,
The size of the opening in the mask is preferably slightly larger than the recess 5.
尚、このようにして金属により表面処理を行うと、にじ
みやマスク開孔の合せ誤差等に由来する処理金属不要部
分への処理金属の付着があるが、にじみや不要部分に付
着した処理金属は、後述する方法で除去することができ
るのでかまわない。Note that when surface treatment is performed with metal in this way, the treated metal may adhere to areas where the treated metal is not needed due to bleeding or mask hole alignment errors. , it does not matter because it can be removed by the method described later.
金属による表面処理後に行う処理金属のにじみ部分や処
理金属不要部分に付着した処理金属の除去は、剥離液を
用いて行う。After surface treatment with metal, removal of the treated metal adhering to areas where the treated metal bleeds or areas where no treated metal is needed is performed using a stripping solution.
具体的には、リードフレーム上を水平方向に剥離液を流
すか、または、第４図に示すように、リードフレーム１
０上に、リードフレーム１０の非処理部表面９と０〜１
ｍｍ程度離して遮蔽板８をおいた状態で剥離液に浸漬す
る。Specifically, the stripping liquid is flowed horizontally over the lead frame, or as shown in FIG.
0, the untreated surface 9 of the lead frame 10 and 0 to 1
It is immersed in a stripping solution with the shielding plate 8 placed about mm apart.
この際、剥離液はｆの方向に流動させる。 また、剥離
液は通常使用されているものでよく、例えば０．５〜５
％ＮａＯＨ溶液、１０％ＫＯＨ溶液等があげられる。At this time, the stripping liquid is made to flow in the direction f. Moreover, the stripping liquid may be one that is commonly used, for example, 0.5 to 5
% NaOH solution, 10% KOH solution, etc.
このような方法で、処理金属のにじみ部分や処理金属不
要部分に付着した処理金属の除去を行うと、陥凹部５内
の処理金属の溶解速度は、にじみ部分や処理金属不要部
分に付着したものよりも極度に遅いので、にじみ部分や
処理金属不要部分の処理金属が完全に溶解するまで剥離
液と接触させても、陥凹部５内の処理金属の大部分は残
存する。 従って、陥凹部すなわちワイヤボンディング
部５の寸法精度の高い本発明のリードフレームが容易に
得られる。When the processed metal adhering to the bleeding part of the processed metal and the unnecessary part of the processed metal is removed by this method, the dissolution rate of the processed metal in the recessed part 5 is lower than that of the processed metal adhering to the bleeding part and the unnecessary part of the processed metal. Even if the treated metal in the bleed areas and unnecessary areas is brought into contact with the stripping solution until it is completely dissolved, most of the treated metal in the recess 5 remains. Therefore, the lead frame of the present invention in which the recessed portion, that is, the wire bonding portion 5 has high dimensional accuracy can be easily obtained.
本発明のリードフレームは、上述の本発明ノ方法で作る
ことが最も好ましいが、他の好適な製造方法として、以
下に述べる方法がある。The lead frame of the present invention is most preferably manufactured by the method of the present invention described above, but other suitable manufacturing methods include the methods described below.
即ち、リードフレームのリード部先端部に、プレス加工
によって平坦底部とこれを包囲する周壁で構成される陥
凹部を形成すると同時に、該陥凹部に、Ａｕ、Ａｇ、Ｃ
ｕ％ＡｊＺのうちから選ばれる少なくとも１種の金属の
箔を圧接する工程を含む方法である。That is, at the tip of the lead part of the lead frame, a recessed part consisting of a flat bottom part and a peripheral wall surrounding the flat bottom part is formed by press working, and at the same time, Au, Ag, and C are injected into the recessed part.
This method includes a step of press-welding a foil of at least one metal selected from u%AjZ.
この方法によれば、金属箔の端部の剥れが少なく、金属
箔が良好に接合する。According to this method, there is little peeling of the ends of the metal foil, and the metal foils are bonded well.
〈実施例〉 以下に、実施例により、本発明を具体的に説明する。<Example> EXAMPLES The present invention will be specifically explained below with reference to Examples.
（実施例１）
タブ部の大きさが７ｍｍＸ １０ｍｍの６０ビンのリー
ドフレーム材料のリード部先端部に、コイニング加工に
より、直径１００μｍの円形の平坦底部とこれを包囲す
る周壁で構成される段差２０μｍの陥凹部を形成した。(Example 1) A step of 20 μm consisting of a circular flat bottom with a diameter of 100 μm and a peripheral wall surrounding it was formed by coining on the tip of the lead of a 60-bin lead frame material with a tab size of 7 mm x 10 mm. A depression was formed.
これに直径１２０μｍの円形の開孔部を有するマスク
を当接し、電気めっき法によって銀をめっぎした。 続
いて、このリードフレームの非銀めっき部表面と０．５
ｍｍ＃した位置に遮蔽板をおき、遮蔽板と共に、リード
フレームを５％ＮａＯＨ溶液に浸漬した。 １分間で
不要部分の銀が溶解したので、剥離液から引き上げ、水
洗、乾燥を行い、リード部先端部が第２ｂ図に示す形状
のリードフレームを得た。 陥凹部の銀層の厚さは、４
〜７μｍであった。A mask having a circular opening with a diameter of 120 μm was placed on this, and silver was plated by electroplating. Next, the surface of the non-silver plated part of this lead frame and 0.5
A shielding plate was placed at a position of # mm, and the lead frame and the shielding plate were immersed in a 5% NaOH solution. Since the unnecessary portions of silver were dissolved in 1 minute, it was removed from the stripping solution, washed with water, and dried to obtain a lead frame with the leading end of the lead portion having the shape shown in FIG. 2b. The thickness of the silver layer in the recess is 4
It was ~7 μm.
（実施例２）
実施例１と同様のリードフレーム材料を用い、プレス加
工により、−辺の長さが６０μｍの正方形の平坦底部と
これを包囲する周壁で構成される陥凹部を形成すると同
時に、厚さ１０μｍのアルミニウム箔を圧接し、陥凹部
の段差が１５μｍのリード部先端部が第２ａ図に示す形
状のリードフレームを得た。(Example 2) Using the same lead frame material as in Example 1, a recess consisting of a square flat bottom with a side length of 60 μm and a peripheral wall surrounding it was formed by press working, and at the same time, An aluminum foil having a thickness of 10 .mu.m was pressed against the aluminum foil to obtain a lead frame having a recessed portion having a step of 15 .mu.m and a leading end having the shape shown in FIG. 2a.
（比較例）
実施例１と同様のリードフレーム材料を用い、エツチン
グ加工により、リード部先端から０．６ｍｍの位置まで
が段差部であり、段差が２０μｍのリードフレームを得
た。 これに、段差部と同じ形状、大きさの開孔部を
有するマスクを当接し、電気めっき法によって銀をめっ
きし、厚さ７μｍの銀層を形成し、リード部先端部が第
３図に示す形状のリードフレームを得た。(Comparative Example) Using the same lead frame material as in Example 1, a lead frame with a stepped portion extending 0.6 mm from the tip of the lead portion and having a step difference of 20 μm was obtained by etching. A mask having an opening having the same shape and size as the stepped portion was applied to this, and silver was plated by electroplating to form a 7 μm thick silver layer. A lead frame having the shape shown was obtained.
以上のリードフレームを用い、ワイヤボンディング法で
ＩＣの組立実装を行った。 出来上がった半導体装置を
検査したところ、実施例１のリードフレームを用いた半
導体装置の歩留りは１００％、実施例２のリードフレー
ムを用いた半導体装置の歩留りは１００％、比較例のリ
ードフレームを用いた半導体装置の歩留りは９６％であ
った。Using the above lead frame, an IC was assembled and mounted using the wire bonding method. When the completed semiconductor devices were inspected, the yield of the semiconductor device using the lead frame of Example 1 was 100%, the yield of the semiconductor device using the lead frame of Example 2 was 100%, and the yield of the semiconductor device using the lead frame of Example 2 was 100%. The yield of semiconductor devices was 96%.
〈発明の効果〉
本発明により、ボンディング部の処理金属の寸法精度の
高いリードフレームとその製造方法が１是供される。<Effects of the Invention> The present invention provides a lead frame in which the processed metal of the bonding portion has high dimensional accuracy, and a method for manufacturing the lead frame.
本発明のリードフレームを用いると、ワイヤボンディン
グ時にボンディングポイントのずれが生じにくく、また
、導電部の寸法精度が高いために、信頼性の高い半導体
装置が得られる。When the lead frame of the present invention is used, it is difficult for bonding points to shift during wire bonding, and since the dimensional accuracy of the conductive portion is high, a highly reliable semiconductor device can be obtained.
本発明の製造方法は、従来の金属処理方法を適用して寸
法精度の高い金属処理部を形成することができるので、
実用性が高い。The manufacturing method of the present invention can form a metal processed part with high dimensional accuracy by applying a conventional metal processing method.
Highly practical.
第１図は、本発明のリードフレームにＩＣ素子を搭載し
、ワイヤボンディングした状態を示す平面図である。
第２ａ図および第２ｂ図は、本発明のリードフレームの
リード部先端部を示す斜視図である。
第３図は、従来のリードフレームのリード部先端部を示
す斜視図である。
第４図は、本発明のリードフレームの製造工程における
処理金属不要部分に付着した処理金属を選択的に溶解す
る方法を示す模式図である。
符号の説明
１・・・ＩＣ素子、
２・・・ボンディングワイ忙
３・・・リード部先端部、
４・・・タブ部、
５・・・ワイヤボンディング部（陥凹部）、６・・・他
の面、
７・・・段差部、
８・・・遮蔽板、
９・・・非処理部表面、
１０・・・リードフレーム、
１３・・・リード部
ＦＩＧ、１
ＦＩＧ、３
ＦＩＧ、４FIG. 1 is a plan view showing a state in which an IC element is mounted on the lead frame of the present invention and wire-bonded. FIGS. 2a and 2b are perspective views showing the leading end of the lead portion of the lead frame of the present invention. FIG. 3 is a perspective view showing the tip of a lead portion of a conventional lead frame. FIG. 4 is a schematic diagram showing a method for selectively dissolving treated metal adhering to unnecessary portions of the lead frame in the lead frame manufacturing process of the present invention. Explanation of symbols 1... IC element, 2... Bonding wire 3... Lead part tip, 4... Tab part, 5... Wire bonding part (recessed part), 6... Others 7... Step part, 8... Shielding plate, 9... Untreated part surface, 10... Lead frame, 13... Lead part FIG, 1 FIG, 3 FIG, 4
Claims (2)
するリードフレームにおいて、リード部先端部に設けら
れるワイヤボンディング部が、平坦底部とこれを包囲す
る周壁で構成される陥凹部であって、該陥凹部が、Ａｕ
、Ａｇ、Ｃｕ、Ａｌのうちから選ばれる少なくとも１種
の金属で表面処理されていることを特徴とするリードフ
レーム。(1) In a lead frame having a tab portion on which a semiconductor element is mounted and a lead portion, the wire bonding portion provided at the tip of the lead portion is a recessed portion consisting of a flat bottom portion and a peripheral wall surrounding the flat bottom portion. , the recess is made of Au
, Ag, Cu, and Al.
するリードフレームを製造するに際し、リード部先端部
に、平坦底部とこれを包囲する周壁で構成される陥凹部
を形成し、該陥凹部を、Ａｕ、Ａｇ、Ｃｕ、Ａｌのうち
から選ばれる少なくとも１種の金属で表面処理した後、
該陥凹部以外の部分に付着した不要の処理金属を、剥離
液を用いて溶解することを特徴とするリードフレームの
製造方法。(2) When manufacturing a lead frame having a tab portion on which a semiconductor element is mounted and a lead portion, a recess portion consisting of a flat bottom portion and a peripheral wall surrounding the flat bottom portion is formed at the tip of the lead portion, and the recess portion is formed at the tip portion of the lead portion. After surface-treating the recessed portion with at least one metal selected from Au, Ag, Cu, and Al,
A method for manufacturing a lead frame, characterized in that unnecessary processing metal adhering to a portion other than the recessed portion is dissolved using a stripping liquid.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63259885A JP2504141B2 (en) | 1988-10-14 | 1988-10-14 | Manufacturing method of lead frame |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63259885A JP2504141B2 (en) | 1988-10-14 | 1988-10-14 | Manufacturing method of lead frame |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH02106059A true JPH02106059A (en) | 1990-04-18 |
| JP2504141B2 JP2504141B2 (en) | 1996-06-05 |
Family
ID=17340292
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP63259885A Expired - Lifetime JP2504141B2 (en) | 1988-10-14 | 1988-10-14 | Manufacturing method of lead frame |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2504141B2 (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0448942A1 (en) * | 1990-03-15 | 1991-10-02 | International Business Machines Corporation | Semiconductor package |
| US5391439A (en) * | 1990-09-27 | 1995-02-21 | Dai Nippon Printing Co., Ltd. | Leadframe adapted to support semiconductor elements |
| EP0698922A1 (en) * | 1994-08-12 | 1996-02-28 | STMicroelectronics S.r.l. | Leadframe for supporting integrated semiconductor devices |
| JP2014175578A (en) * | 2013-03-12 | 2014-09-22 | Sh Materials Co Ltd | Semiconductor device packaging lead frame |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61101059A (en) * | 1984-10-24 | 1986-05-19 | Hitachi Ltd | Lead frame |
| JPS61236147A (en) * | 1985-04-12 | 1986-10-21 | Toppan Printing Co Ltd | Manufacture of lead frame |
-
1988
- 1988-10-14 JP JP63259885A patent/JP2504141B2/en not_active Expired - Lifetime
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61101059A (en) * | 1984-10-24 | 1986-05-19 | Hitachi Ltd | Lead frame |
| JPS61236147A (en) * | 1985-04-12 | 1986-10-21 | Toppan Printing Co Ltd | Manufacture of lead frame |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0448942A1 (en) * | 1990-03-15 | 1991-10-02 | International Business Machines Corporation | Semiconductor package |
| US5391439A (en) * | 1990-09-27 | 1995-02-21 | Dai Nippon Printing Co., Ltd. | Leadframe adapted to support semiconductor elements |
| EP0698922A1 (en) * | 1994-08-12 | 1996-02-28 | STMicroelectronics S.r.l. | Leadframe for supporting integrated semiconductor devices |
| JPH0870078A (en) * | 1994-08-12 | 1996-03-12 | Sgs Thomson Microelettronica Spa | Structure of support frame for semiconductor device and semiconductor device |
| JP2014175578A (en) * | 2013-03-12 | 2014-09-22 | Sh Materials Co Ltd | Semiconductor device packaging lead frame |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2504141B2 (en) | 1996-06-05 |
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