JPS61236147A - Manufacture of lead frame - Google Patents

Manufacture of lead frame

Info

Publication number
JPS61236147A
JPS61236147A JP7783585A JP7783585A JPS61236147A JP S61236147 A JPS61236147 A JP S61236147A JP 7783585 A JP7783585 A JP 7783585A JP 7783585 A JP7783585 A JP 7783585A JP S61236147 A JPS61236147 A JP S61236147A
Authority
JP
Japan
Prior art keywords
lead frame
noble metal
matters
frame element
elastic material
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP7783585A
Other languages
Japanese (ja)
Inventor
Sotaro Toki
土岐 荘太郎
Toshinosuke Nishida
西田 駿之介
Taketo Tsukamoto
健人 塚本
Tomoo Narishima
智夫 成島
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toppan Inc
Original Assignee
Toppan Printing Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toppan Printing Co Ltd filed Critical Toppan Printing Co Ltd
Priority to JP7783585A priority Critical patent/JPS61236147A/en
Publication of JPS61236147A publication Critical patent/JPS61236147A/en
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/48Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
    • H01L21/4814Conductive parts
    • H01L21/4821Flat leads, e.g. lead frames with or without insulating supports

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Lead Frames For Integrated Circuits (AREA)

Abstract

PURPOSE:To suppress waste of the noble metal plating to be performed on lead frame element matters for IC to the minimum by a method wherein the noble metal plated layers to be adhered on the side surfaces of the lead frame element matters are peeled off and the plated layers are reproduced. CONSTITUTION:Lead frame element matters 3, whereon a noble metal plating is performed, are set between a top plate 1, which is attached with a silicon resin material having a chemicals resistance and an elastic force or is attached with an elastic material 2 to be represented by a neoprene rubber, and a bottom plate 6, wherein protruded substances 7 and small holes 8 are provided. At this time, the noble metal surfaces of the element matters 3 are brought into contact with the elastic material 2 and the places equivalent to the plated areas of the element matters 3 are pressed to the elastic material 2 by the protruded matters 7 from the back surfaces of the element matters 3. It is better for the areas of the protruded substances 7 to correctly coincide with those of the plated areas. Each noble metal plated surface 4 to be provided on part of the surface of each lead frame element matter 2 is completely pressed to the elastic material 2 and noble metal surfaces 5 to be adhered on the side surfaces of each lead frame element matter 3 are not brought into contact with the elastic material 2 whatever. In such a state, when removers 9 are made to pass through from the small holes 8 to be provided in the bottom plate 6, the noble metal surfaces 5 only to be adhered on the side surfaces of each lead frame element matter 3 can be removed. As a result, the noble metal surfaces 5 are recovered and can be recycled.

Description

【発明の詳細な説明】 〈産業上の利用分野〉 本発明は、貴金属めりき量を必要最小限にする半導体集
積回路(以下ICと称す)用リードフレームの製造方法
に関する。
DETAILED DESCRIPTION OF THE INVENTION <Industrial Application Field> The present invention relates to a method for manufacturing a lead frame for a semiconductor integrated circuit (hereinafter referred to as IC), which minimizes the amount of precious metal plated.

IC用リードフレームは42合金(Ni42重量%、F
e残)、コバール(Ni29重量%、C017重量%、
Fe残)に代表される鉄系合金、リン青銅、スズ含有銅
などの銅系合金のようにシリコンICチップと熱膨張率
が近く、しかも、高強度、高熱伝導性を有する材料が用
いられている。
The IC lead frame is made of 42 alloy (Ni42% by weight, F
e remainder), Kovar (Ni 29% by weight, C0 17% by weight,
Materials that have a coefficient of thermal expansion close to that of silicon IC chips, and have high strength and high thermal conductivity, such as iron-based alloys such as iron (Fe residue), phosphor bronze, and copper-based alloys such as tin-containing copper, are used. There is.

〈従来の技術〉 IC用リードフレームは前記に示すような金属材料をプ
レス打抜き、あるいはエツチング加工にて所定のパター
ンを形成させた後、アイランド部(ICチップを搭載す
る部分)とインナーリード先端部(ワイヤーボンディン
グする箇所)にICチップ及びワイヤーとの接層性向上
、防食性の附与、拡散防止などの目的で金、銀、パラジ
ウム合金などの貴金属を部分的にめっきしているのが一
般的である。
<Prior art> IC lead frames are made by forming a predetermined pattern by press punching or etching a metal material as shown above, and then forming an island part (the part on which the IC chip is mounted) and an inner lead tip part. Generally, the areas where wire bonding is performed are partially plated with precious metals such as gold, silver, and palladium alloys for the purpose of improving contact with IC chips and wires, imparting anti-corrosion properties, and preventing diffusion. It is true.

〈発明が解決しようとする問題点〉 従来の方法では、必要部分である前記したアイランド部
表面及びインナーリード先端部表面の他に、その側面に
対しても貴金属めっきが施されていた。この側面に付着
する貴金属(5)量は全体の20〜50%を占め高価な
貴金属を無駄にしていた。
<Problems to be Solved by the Invention> In the conventional method, precious metal plating was applied not only to the above-described necessary surfaces of the island part and the inner lead tip, but also to the side surfaces thereof. The amount of precious metal (5) adhering to this side surface accounts for 20 to 50% of the total, wasting expensive precious metal.

本発明の目的はIC用リードフレーム素体(3)におけ
る貴金属めっきの無駄を最小限にとどめるため前記側面
に付着した貴金属めっき層(5)を剥離し、再生できる
ようにしたIC用リードフレームの製造方法を提供する
事にある。
The purpose of the present invention is to create an IC lead frame that can be recycled by peeling off the precious metal plating layer (5) attached to the side surface in order to minimize waste of precious metal plating on the IC lead frame body (3). The purpose is to provide a manufacturing method.

く問題点を解決するだめの手段〉 まず、従来と同°じ手段により、アイランド部表面とイ
ンナーリード先端部表面へ貴金属めっきを施す。このと
き、同時にその側面へも貴金属(5)が電着される。
[Means to Solve the Problem] First, the surface of the island portion and the surface of the tip of the inner lead are plated with a precious metal by the same method as in the conventional method. At this time, the noble metal (5) is simultaneously electrodeposited on the side surfaces thereof.

次に本発明の特徴である剥離工程に移る。第1図に示し
たものヲ言、剥離工程の一実施例を示す拡大説明図であ
る。貴金属めっきが施されたリードフレーム素体(3)
を耐薬品性があり弾力のあるシリコン樹脂あるいはネオ
プレンゴムで代表される弾性体(2)が取りつけられた
上板(1)と、凸起物(7)と小孔(8)が設けられた
底板(6)の間にセットする。このとき、貴金属面を弾
性体(2)に接触させ、裏面から、めっきエリアに相当
する箇所を凸起物(7)で押しつけるようにする。凸起
物(力はめっきエリアと正確に面積が一致した方が望ま
しい。
Next, the process moves to a peeling step which is a feature of the present invention. FIG. 2 is an enlarged explanatory diagram illustrating an embodiment of the peeling process shown in FIG. 1; Lead frame body with precious metal plating (3)
A top plate (1) is attached with an elastic body (2) typically made of chemical-resistant and elastic silicone resin or neoprene rubber, and is provided with a protrusion (7) and a small hole (8). Set between the bottom plates (6). At this time, the noble metal surface is brought into contact with the elastic body (2), and the portion corresponding to the plating area is pressed with the protrusion (7) from the back side. Convex objects (it is preferable that the force and area exactly match the plating area.

このようにしてリードフレーム素体の表面の一部分に施
された貴金属めっき面(4)は完全に弾性体(2)に押
しつけられたため液体の侵入を完全に防ぐ事が出来る。
In this way, the noble metal plating surface (4) applied to a portion of the surface of the lead frame body is completely pressed against the elastic body (2), so that it is possible to completely prevent liquid from entering.

また、側面に付着した貴金属面(5)はそのまま何も接
触しないで残っている。このような状態で底板(6)に
設けられた小孔(8)より剥離液(9)を通過させると
側面に付着した貴金属面(5)のみ除去する事が出来る
Further, the noble metal surface (5) attached to the side surface remains without contacting anything. In this state, when the stripping liquid (9) is passed through the small hole (8) provided in the bottom plate (6), only the noble metal surface (5) attached to the side surface can be removed.

溶解した貴金属は回収して再利用する事によりコストを
抑える事が出来る。
Costs can be reduced by recovering and reusing molten precious metals.

このとき、用いられる上板(1)は耐食性のもので平滑
な面であれば何でも良く、金属、プラスチック、セラミ
ックから選ばれる。特にリードフレーム素体が42合金
のよ5に磁性を有するものの場合、上板(1)に磁石を
用いるのもハンドリングの点で好ましい事である。
At this time, the upper plate (1) used may be of any type as long as it is corrosion resistant and has a smooth surface, and is selected from metal, plastic, and ceramic. Particularly in the case where the lead frame body is highly magnetic such as 42 alloy, it is preferable to use a magnet for the upper plate (1) from the viewpoint of handling.

底板(6)及び凸起物(7)の材質は剥離液(9)が接
触するので耐食性のあるプラスチック類か望ましく、塩
化ビニール、アクリル、ポリエステル、ポリプロピレン
、ポリエチレン、ガラス繊維入エポキシ樹脂板などが挙
げられる。
Since the material of the bottom plate (6) and the protrusions (7) will come into contact with the stripping liquid (9), it is preferable to use corrosion-resistant plastics, such as vinyl chloride, acrylic, polyester, polypropylene, polyethylene, and glass fiber-containing epoxy resin plates. Can be mentioned.

小孔(8)のサイズは数渭鳳〜数IQ?IIBの円形が
望ましいが特に形状あるいは個数を規定するものではな
5゛9 〈実施例1〉 0、15 fn厚の42合金(Ni42重量%、Fe残
)をエツチングにより所定のパターンに形成した後、従
来の方法で部分的に金めつきを2μ施した。
The size of the small hole (8) is several Weiho to several IQ? A circular shape of IIB is desirable, but there is no particular restriction on the shape or number of pieces. , Gold plating was partially applied to a thickness of 2μ using a conventional method.

この後、Q、 31厚のシリコン樹脂(信越化学工業製
KB112)から成る弾性体(2)が貼り合わされた塩
化ビニル製の上板(1)を所定のめっきエリアと同位置
、同サイズの凸起物(7)を多数の小孔t81(10m
富φ)を有するガラス繊維入りエポキシ樹脂の底板(6
)の間に上記リードフレーム素体をセットし完全に弾性
体(2)にめりきWJ(4)が密着するまでしめつけた
後、剥離液(9)を小孔(8)より通過させ側面に電着
した金めりき層(5)を除去した。条件は以下のとおり
である。
After this, the upper plate (1) made of vinyl chloride on which the elastic body (2) made of Q.31 thick silicone resin (KB112 manufactured by Shin-Etsu Chemical Co., Ltd.) is pasted is placed at the same position and with the same size convexity as the predetermined plating area. A large number of small holes T81 (10 m
Glass fiber-filled epoxy resin bottom plate (6
) and tightened the lead frame body completely between the elastic body (2) and the WJ (4), and then let the stripping liquid (9) pass through the small hole (8) to the side surface. The electrodeposited gold plating layer (5) was removed. The conditions are as follows.

温度 30℃ 時間 1.5分 これにより金の使用量を最小限におさえたIC用リード
フレームを製造する事が出来た。
Temperature: 30° C. Time: 1.5 minutes As a result, it was possible to manufacture an IC lead frame in which the amount of gold used was kept to a minimum.

剥離液中に溶解した金は回収して再生する事が出来る。The gold dissolved in the stripping solution can be recovered and recycled.

〈実施例2〉 0.25朋厚の銅合金(MF202三菱電機製、Sn2
.0%、Ni O,2%、Cu残)をプレス打抜きによ
り、所定のパターンに形成した後、従来の方法で部分的
に銀めっきを5μ施した。
<Example 2> 0.25 mm thick copper alloy (MF202 manufactured by Mitsubishi Electric, Sn2
.. 0%, Ni 2 O, 2%, Cu remaining) was formed into a predetermined pattern by press punching, and then silver plating was partially applied to a thickness of 5μ using a conventional method.

この後、0.2朋厚のシリコン樹脂(信越化学工業製K
B12)から成る弾性体(2)が貼り合わされたガラス
繊維入りエポキシ樹脂の上板(1)を所定のめつきエリ
アと同位置、同サイズの凸起物(7)(高さ5 mw、
 )と多数の小孔(8) (5rnaψ)を有する底板
(6)(材質は上板(1)と同じ)の間に上記リードフ
レーム素体をセットし完全に弾性体(2)にめっき面(
4)が密着するまでしめつけた後、剥離液(9)を小孔
(8)より通過させ側面に電着した銀めっき層(5)を
除去した。条件は次のとおりである。
After this, 0.2 mm thick silicone resin (K made by Shin-Etsu Chemical Co., Ltd.
An upper plate (1) of glass fiber-containing epoxy resin on which an elastic body (2) made of B12) is pasted is placed at the same position as the predetermined plating area, and a protrusion (7) of the same size (height: 5 mw,
) and the bottom plate (6) (same material as the top plate (1)) having a large number of small holes (8) (5rnaψ), and completely flatten the plating surface to the elastic body (2). (
4) was tightened until it adhered, and then a stripping solution (9) was passed through the small hole (8) to remove the silver plating layer (5) electrodeposited on the side surface. The conditions are as follows.

温度 50℃ 時間 2分 これにより銀の使用量を最小限に抑えたIC用リードフ
レームを製造する事が出来た。なお剥離液中に溶解した
銀は回収して再生する事が出来る。
Temperature: 50°C Time: 2 minutes As a result, it was possible to manufacture an IC lead frame in which the amount of silver used was kept to a minimum. Note that the silver dissolved in the stripping solution can be recovered and recycled.

〈発明の効果〉 本製造法を用いると貴金属使用量の約20〜50%が節
約できるようになった。
<Effects of the Invention> Using this manufacturing method, it has become possible to save about 20 to 50% of the amount of precious metal used.

%に貴金属として金を用いた場合や、多ピンで先端の幅
の狭いリードフレームの場合、その効果は非常に大きく
なる。また本発明によれば、凸起物にて押しつけるから
めつき層を残すべき表面は確実に上板により被覆される
のであり、めっき層の必要部分が除去される惧れかない
。また、剥離液は除去したいめっき層に近接した場所か
ら供給されるので、めっき層の除去が短時間かつ確実に
行なえる。
This effect becomes extremely large when gold is used as the precious metal in the lead frame, or when the lead frame has a large number of pins and a narrow tip. Further, according to the present invention, since the surface on which the plating layer is to be left is reliably covered by the upper plate since it is pressed by the protrusions, there is no risk that a necessary portion of the plating layer will be removed. Furthermore, since the stripping liquid is supplied from a location close to the plating layer to be removed, the plating layer can be removed reliably in a short time.

さらに言えば、本発明の製法によれば、リードフレーム
の多ビン化やその形状が複雑になりつつあるという近時
のリードフレームの高精度化に対応できる優位性がある
Furthermore, the manufacturing method of the present invention has the advantage of being able to cope with the recent trend toward higher precision in lead frames, such as increased number of lead frames and increasingly complex shapes.

【図面の簡単な説明】[Brief explanation of drawings]

第1図は、本発明による半導体用リードフレームの製造
方法の一例の主要工程を示す拡大説明図、第2図は、剥
離工程時に用いる底板の一実施例を示した拡大説明図で
ある。 (1)・・・上板      (2)・・・弾性体(3
)・・・リードフレーム素体  (4)・・・貴金属め
っき(5)・・・側面に付着した貴金属めっき(6)・
・・底板      (7)・・・凸起物(8)・・・
小孔      (9)・・・剥離液代衣省鈴木相夫
FIG. 1 is an enlarged explanatory view showing the main steps of an example of the method for manufacturing a semiconductor lead frame according to the present invention, and FIG. 2 is an enlarged explanatory view showing an example of the bottom plate used in the peeling process. (1)...Top plate (2)...Elastic body (3
)...Lead frame body (4)...Precious metal plating (5)...Precious metal plating attached to the side (6)
・・Bottom plate (7)・Protrusion (8)・・・
Small hole (9)...Removal liquid agent Aio Suzuki

Claims (1)

【特許請求の範囲】[Claims]  半導体リードフレーム素体(3)のボンディングエリ
アに貴金属めっきを施した後、めっき面(4)を上板(
1)に取りつけられた弾性体(2)に接触させ、裏面よ
りボンディングエリアに相当する面積を有する凸起物(
7)で押しつけ、該凸起物(7)を有する底板(6)に
設けられた小孔(8)より剥離液(9)を通過させ側面
に付着している貴金属(5)を除去する事を特徴とする
リードフレームの製造方法。
After precious metal plating is applied to the bonding area of the semiconductor lead frame body (3), the plating surface (4) is attached to the upper plate (
A convex object (2) having an area corresponding to the bonding area is placed in contact with the elastic body (2) attached to the
7), and remove the precious metal (5) adhering to the side surface by passing the stripping liquid (9) through the small hole (8) provided in the bottom plate (6) having the protrusion (7). A method for manufacturing a lead frame characterized by:
JP7783585A 1985-04-12 1985-04-12 Manufacture of lead frame Pending JPS61236147A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP7783585A JPS61236147A (en) 1985-04-12 1985-04-12 Manufacture of lead frame

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7783585A JPS61236147A (en) 1985-04-12 1985-04-12 Manufacture of lead frame

Publications (1)

Publication Number Publication Date
JPS61236147A true JPS61236147A (en) 1986-10-21

Family

ID=13645096

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7783585A Pending JPS61236147A (en) 1985-04-12 1985-04-12 Manufacture of lead frame

Country Status (1)

Country Link
JP (1) JPS61236147A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02106059A (en) * 1988-10-14 1990-04-18 Hitachi Cable Ltd Lead frame and its manufacture
US5183724A (en) * 1990-12-18 1993-02-02 Amkor Electronics, Inc. Method of producing a strip of lead frames for integrated circuit dies in a continuous system
JPH0832004A (en) * 1994-07-13 1996-02-02 Goto Seisakusho:Kk Plating method of lead frame for semiconductor device

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02106059A (en) * 1988-10-14 1990-04-18 Hitachi Cable Ltd Lead frame and its manufacture
US5183724A (en) * 1990-12-18 1993-02-02 Amkor Electronics, Inc. Method of producing a strip of lead frames for integrated circuit dies in a continuous system
JPH0832004A (en) * 1994-07-13 1996-02-02 Goto Seisakusho:Kk Plating method of lead frame for semiconductor device

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