HK22389A - Semiconductor device and method of manufacturing the same - Google Patents

Semiconductor device and method of manufacturing the same

Info

Publication number
HK22389A
HK22389A HK223/89A HK22389A HK22389A HK 22389 A HK22389 A HK 22389A HK 223/89 A HK223/89 A HK 223/89A HK 22389 A HK22389 A HK 22389A HK 22389 A HK22389 A HK 22389A
Authority
HK
Hong Kong
Prior art keywords
bonding wire
bonding
semiconductor device
manufacturing
same
Prior art date
Application number
HK223/89A
Inventor
Susumu Okikawa
Hiroshi Mikino
Wahei Kitamura
Hiromichi Suzuki
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP58177945A external-priority patent/JPS6070751A/en
Priority claimed from JP58177944A external-priority patent/JPS6070750A/en
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Publication of HK22389A publication Critical patent/HK22389A/en

Links

Classifications

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    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
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    • H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K20/00—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating
    • B23K20/002—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating specially adapted for particular articles or work
    • B23K20/004—Wire welding
    • B23K20/005—Capillary welding
    • B23K20/007—Ball bonding
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Abstract

A bonding wire 6 for connecting a semiconductor pellet 3 and a lead in a semiconductor device has the shape and height of its loop controlled by annealing the bonding wire at a specified temperature before bonding and/or by employing a specified composition for the material of the bonding wire. In addition, good bondability can be attained if the hardness of a ball formed at the end of the bonding wire for ball bonding is in a specified range of Vickers hardness of 30 to 50, preferably 35 to 42. The bonding wire is made of aluminum or an aluminum composition containing e.g. about 1.5 weight-% of magnesium or about 2% of silicon. <IMAGE>
HK223/89A 1983-09-28 1989-03-16 Semiconductor device and method of manufacturing the same HK22389A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP58177945A JPS6070751A (en) 1983-09-28 1983-09-28 Semiconductor device
JP58177944A JPS6070750A (en) 1983-09-28 1983-09-28 Semiconductor device

Publications (1)

Publication Number Publication Date
HK22389A true HK22389A (en) 1989-03-24

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HK223/89A HK22389A (en) 1983-09-28 1989-03-16 Semiconductor device and method of manufacturing the same

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KR (1) KR920008252B1 (en)
DE (1) DE3435489A1 (en)
FR (1) FR2555813B1 (en)
GB (1) GB2146937B (en)
HK (1) HK22389A (en)
IT (1) IT1176815B (en)
SG (1) SG77288G (en)

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IT1183375B (en) * 1984-02-24 1987-10-22 Hitachi Ltd SEMICONDUCTOR DEVICE INCLUDING A BALL, CONDUCTING WIRES AND EXTERNAL CONDUCTING PORTIONS ARE CONNECTED TO THE BALL THROUGH SUCH CONDUCTING WIRES
JPS60223149A (en) * 1984-04-19 1985-11-07 Hitachi Ltd Semiconductor device
US4705204A (en) * 1985-03-01 1987-11-10 Mitsubishi Denki Kabushiki Kaisha Method of ball forming for wire bonding
US4976393A (en) * 1986-12-26 1990-12-11 Hitachi, Ltd. Semiconductor device and production process thereof, as well as wire bonding device used therefor
ES2059841T3 (en) * 1989-02-13 1994-11-16 Bayer Agrochem Kk NITRO COMPOUNDS WITH INSECTICIDE ACTIVITY.
US5437405A (en) * 1994-08-22 1995-08-01 National Semiconductor Corporation Method and apparatus for stitch bonding of wires to integrated circuit bonding pads
DE102007025658B4 (en) * 2007-06-01 2009-04-09 Infineon Technologies Ag Bonding wire assembly and method of making a bonding wire assembly
US11172915B2 (en) 2019-04-24 2021-11-16 Covidien Lp Specimen retrieval devices with selective bag release

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US4387283A (en) * 1981-08-03 1983-06-07 Texas Instruments Incorporated Apparatus and method of forming aluminum balls for ball bonding
DD200954A1 (en) * 1981-10-20 1983-06-22 Wolfgang Werner MICROWIRE OF ALUMINUM FOR WIRE BONDING
JPS58154241A (en) * 1982-03-10 1983-09-13 Hitachi Ltd Electric apparatus and preparation thereof and bonding wire used thereto and preparation thereof

Also Published As

Publication number Publication date
IT8422846A0 (en) 1984-09-26
FR2555813A1 (en) 1985-05-31
GB2146937A (en) 1985-05-01
IT8422846A1 (en) 1986-03-26
SG77288G (en) 1989-03-23
IT1176815B (en) 1987-08-18
DE3435489A1 (en) 1985-05-02
KR850002668A (en) 1985-05-15
GB8424394D0 (en) 1984-10-31
GB2146937B (en) 1987-04-23
FR2555813B1 (en) 1986-06-20
KR920008252B1 (en) 1992-09-25

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