DE2752655A1 - Electronic-component assembly for automated mass-production - has component in hole in support foil closed on one side by metal-plane heat sink - Google Patents

Electronic-component assembly for automated mass-production - has component in hole in support foil closed on one side by metal-plane heat sink

Info

Publication number
DE2752655A1
DE2752655A1 DE19772752655 DE2752655A DE2752655A1 DE 2752655 A1 DE2752655 A1 DE 2752655A1 DE 19772752655 DE19772752655 DE 19772752655 DE 2752655 A DE2752655 A DE 2752655A DE 2752655 A1 DE2752655 A1 DE 2752655A1
Authority
DE
Germany
Prior art keywords
component
electronic
heat sink
carrier
hole
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
DE19772752655
Other languages
German (de)
Other versions
DE2752655C2 (en
Inventor
Rolf Hohmann
H Eckhard Dr Ing Krueger
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Blaupunkt Werke GmbH
Original Assignee
Blaupunkt Werke GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from DE2742882A external-priority patent/DE2742882C2/en
Application filed by Blaupunkt Werke GmbH filed Critical Blaupunkt Werke GmbH
Priority to DE19772752655 priority Critical patent/DE2752655A1/en
Publication of DE2752655A1 publication Critical patent/DE2752655A1/en
Application granted granted Critical
Publication of DE2752655C2 publication Critical patent/DE2752655C2/de
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/42—Fillings or auxiliary members in containers or encapsulations selected or arranged to facilitate heating or cooling
    • H01L23/433—Auxiliary members in containers characterised by their shape, e.g. pistons
    • H01L23/4334—Auxiliary members in encapsulations
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/12—Mountings, e.g. non-detachable insulating substrates
    • H01L23/14—Mountings, e.g. non-detachable insulating substrates characterised by the material or its electrical properties
    • H01L23/142—Metallic substrates having insulating layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
    • H01L23/3121—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed a substrate forming part of the encapsulation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144—Gold (Au) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
    • H01L2224/48465—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L24/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01013—Aluminum [Al]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01029—Copper [Cu]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151—Die mounting substrate
    • H01L2924/1515—Shape
    • H01L2924/15153—Shape the die mounting substrate comprising a recess for hosting the device
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151—Die mounting substrate
    • H01L2924/1517—Multilayer substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)

Abstract

The electronic-component assembly has its component mounted in a hole in a support and connected to conductors on the top of the support. A heatsink closes the hole on the underside of the support, this assembly being as in known components. The support (1) is a foil with the conductors (8) on its top surface. The foil is 200-500 microns thick. The heatsink consists of a metal plate bonded to the foil. Advantage lies in the assembly lending itself to automated mass production, with reduction in costs.

Description

Die vorliegende Erfindung betrifft ein elektronisches Bauelement nachThe present invention relates to an electronic component according to

dem Oberbegriff von Anspruch 1.the preamble of claim 1.

Die Träger elektronischer Bauelemente dieser Art sind zur Erzielung einer ausreichenden mechanischen Stabilität als etwa 1,5 mm dicke Platten ausgebildet. Um bei derartigen Materialstärken der Träger den Einsatz üblicher Bondwerkzeuge zu ermöglichen, wird gemäß der Stanirnanmeldung P 27 42 882.6 vorgeschlagen, am Kühlkörper einen Plateaubereich vorzusehen, auf dem das Halbleiterbauelement festgelegt wird.The carriers of electronic components of this type are to achieve a sufficient mechanical stability formed as approximately 1.5 mm thick plates. In order to use conventional bonding tools with such material thicknesses of the carrier to enable is proposed according to Stanirnanmeldung P 27 42 882.6, on Heat sink to provide a plateau area on which the semiconductor component is fixed will.

Damit verbunden sind hohe Anforderungen an die Fertigungstoleranzen.Associated with this are high demands on manufacturing tolerances.

Der Erfindung liegt die Aufgabe zugrunde, ein elektronisches Bauelement der eingangs erwähnten Art zu entwickeln, welches auch im Rahmen automatischer Fertigungsprozesse herstellbar ist.The invention is based on the object of an electronic component of the type mentioned at the beginning, which can also be used in the context of automatic manufacturing processes can be produced.

Diese Aufgabe wird gemäß der vorliegenden Erfindung dadurch gelöst, daß der Träger mit den auf seiner Oberseite angeordneten Leitungsbahnen als Folie ausgebildet ist.According to the present invention, this object is achieved by that the carrier with the conductor tracks arranged on its upper side as a film is trained.

In einer vorteilhaften Ausführungsform der Erfindung beträgt die Dicke der den Träger bildenden Folie zwischen 200 um und 500 um.In an advantageous embodiment of the invention, the thickness is of the film forming the support between 200 µm and 500 µm.

Gemäß einer weiteren vorteilhaften Ausgestaltung der Erfindung ist der Kühlkörper als Blech ausgebildet und mit der den Träger bildenden Folie flächenhaft verklebt.According to a further advantageous embodiment of the invention is the heat sink is designed as a sheet metal and is flat with the film forming the carrier glued.

Die Vorteile der vorliegenden Erfindung liegen insbesondere darin, daß der Kühlkörper neben einer sehr guten Wärmeableitung eine hervorragende mechanische Stabilität der gesamten Baueinheit gewährleistet. Darüber hinaus lassen sich erfindungsgemäß aufgebaute Baueinheiten auch in Endlosfertigungsverfahren, bei denen die elektronischen Bauelemente, die den Träger bildende Folie und du Kühlblech von Rollen abgewickelt und in einer Fertigungsstation zusammengef~uhrt und zusammengefügt werden, herstellen.The advantages of the present invention are in particular that that the heat sink has excellent mechanical properties in addition to very good heat dissipation Guaranteed stability of the entire structural unit. In addition, according to the invention built-up units also in continuous production processes in which the electronic Components, the film forming the carrier and the cooling plate unwound from rolls and are brought together and joined together in a production station.

Nachfolgend wird die Erfindung an einer Figur, in der ein in den Durchbruch eines als Film ausgebildeten Trägers eingefügtes und auf dem Kühlblech befestigtes elektronisches Bauelement im Querschnitt dargestellt ist, näher erläutert.The invention is based on a figure in which a in the breakthrough a carrier designed as a film and attached to the cooling plate electronic component is shown in cross section, explained in more detail.

Dabei bedeutet 1 den mit einem Durchbruch 2 versehenen und als Folie ausgebildeten Träger, auf dem Leitungsbahnen 8 festgelegt sind. An der Unterseite des Trägers 1 ist du Kühlblech 4 festgeklebt. Das elektronische Bauelement 3 ist auf dem den Durchbruch 2 des Trägers 1 überdeckenden Bereich 5 des Kühlblechs 4 beispielsweise durch Kleben festgelegt. Dabei ist du elektronische Bauelement 3 über Anschlußdrähte 6 nach dem Bondverfahren mit den Leitungsbahnen 8 verbunden. Ferner ist es möglich, elektronische Bauelemente 3, die bereits vom Hersteller mit Anschlußbshnen versehen geliefert werden, auf dem Bereich 5 festzukleben und mit den Leitungsbahnen 8 durch Bonden zu verbinden.1 means the one provided with an opening 2 and as a film trained carrier on which the conductor tracks 8 are set. On the bottom of the carrier 1 is glued to the cooling plate 4. The electronic component 3 is on the region 5 of the cooling plate 4 that covers the opening 2 of the carrier 1 set for example by gluing. You are electronic component 3 connected to the conductor tracks 8 via connecting wires 6 according to the bonding process. It is also possible to use electronic components 3 that are already supplied by the manufacturer Connection braces are supplied provided, to be glued to the area 5 and with to connect the conductor tracks 8 by bonding.

Das elektronische Bauelemente 3 und seine Anschlußdrähte 6 werden nach einem Funktionstest unter üblichen Betriebsbedingungen mit einer elektrisch isolierenden Abdeckmasse 7 überdeckt. Hierfür sind unter Wärmeeinwirkung aushärtende zweikomponentige Kunstharze besonders gut geeignet. Die Abdeckmuse 7 schützt du elektronische Bauelement 3 und die Anschlußdrähte 6 vor störenden mechanischen und chemischen Einwirkungen.The electronic component 3 and its connecting wires 6 are after a function test under normal operating conditions with an electrical insulating covering compound 7 covered. For this purpose, hardening under the action of heat are used two-component synthetic resins are particularly suitable. The cover cap 7 protects you electronic component 3 and the connecting wires 6 from disruptive mechanical and chemical effects.

Als Material für die Kühlbleche 4 sind aufgrund ihrer sehr guten Wärmeleitfähigkeit insbesondere die Metalle Kupfer und Aluminium geeignet.As a material for the cooling plates 4 are due to their very good thermal conductivity the metals copper and aluminum are particularly suitable.

Zur Verbesserung der Wärmeabstrahlung durch die Kühlbleche 4 kann deren Emissionsvermögen durch eine entsprechende Färbung der Oberfläche erhöht werden.To improve the heat radiation through the cooling plates 4 can their emissivity can be increased by coloring the surface accordingly.

Claims (3)

Elektronisches Bauelement Ansprüche 4 Mit auf der Oberseite eines Trägers angeordneten Leitungsbahnen verbundenes elektronisches Bauelement1 welches in einen Durchbruch des Trägers eingefügt und auf einem an der Unterseite des Tragers den Durchbruch überdeckend festgelegten Kühlkörper befestigt ist, insbesondere nach der Stannanmeldung P 27 42 882.6, dadurch gekennzeichnet, daß der Träger (1) mit den auf seiner Oberseite angeordneten Leitungsbahnen (8) als Folie ausgebildet ist. Electronic component claims 4 with on top of one Electronic component1 connected to the carrier arranged conductor tracks inserted into an opening in the carrier and on one on the underside of the carrier the opening covering fixed heat sink is attached, in particular after the Stann application P 27 42 882.6, characterized in that the carrier (1) with the conductor tracks (8) arranged on its upper side is designed as a film. 2. Bauelement nach Anspruch 1, dadurch gekennzeichnet, daß die Dicke der den Träger (1) bildenden Folie wischen 200 um und 500 um beträgt. 2. Component according to claim 1, characterized in that the thickness of the film forming the support (1) is between 200 µm and 500 µm. 3. Bauelement nach den Ansprüchen 1 und 2, dadurch gekennzeichnet, daß der Kühlkörper (4) als Blech ausgebildet und mit der den Trager (1) bildenden Folie flächenhaft verklebt ist. 3. Component according to claims 1 and 2, characterized in that that the heat sink (4) is designed as a sheet metal and with which the carrier (1) forms Foil is glued flat.
DE19772752655 1977-09-23 1977-11-25 Electronic-component assembly for automated mass-production - has component in hole in support foil closed on one side by metal-plane heat sink Granted DE2752655A1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
DE19772752655 DE2752655A1 (en) 1977-09-23 1977-11-25 Electronic-component assembly for automated mass-production - has component in hole in support foil closed on one side by metal-plane heat sink

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE2742882A DE2742882C2 (en) 1977-09-23 1977-09-23 Electronic component
DE19772752655 DE2752655A1 (en) 1977-09-23 1977-11-25 Electronic-component assembly for automated mass-production - has component in hole in support foil closed on one side by metal-plane heat sink

Publications (2)

Publication Number Publication Date
DE2752655A1 true DE2752655A1 (en) 1979-06-07
DE2752655C2 DE2752655C2 (en) 1988-03-24

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
DE19772752655 Granted DE2752655A1 (en) 1977-09-23 1977-11-25 Electronic-component assembly for automated mass-production - has component in hole in support foil closed on one side by metal-plane heat sink

Country Status (1)

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DE (1) DE2752655A1 (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3300693A1 (en) * 1982-02-05 1983-09-22 Hitachi, Ltd., Tokyo SEMICONDUCTOR ARRANGEMENT AND METHOD FOR THEIR PRODUCTION
DE3514253A1 (en) * 1984-04-19 1985-10-31 Hitachi, Ltd., Tokio/Tokyo SEMICONDUCTOR DEVICE
DE3433779A1 (en) * 1984-09-14 1986-03-27 Robert Bosch Gmbh, 7000 Stuttgart Protective layer for semiconductor circuits
DE3814469A1 (en) * 1987-04-30 1988-11-17 Mitsubishi Electric Corp Semiconductor arrangement and method for producing it

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE4118398C2 (en) * 1991-06-05 1994-07-21 Ant Nachrichtentech Electronics assembly with metal housing
DE4416460C2 (en) * 1994-05-10 1996-04-11 Hella Kg Hueck & Co Circuit arrangement, in particular for fan control for motor vehicles

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2202802A1 (en) * 1971-02-05 1972-08-17 Philips Nv Semiconductor device
DE2124887A1 (en) * 1971-05-19 1972-12-07 Philips Patentverwaltung Electrical component, preferably semiconductor component, with foil contact
DE2414297A1 (en) * 1974-03-25 1975-10-02 Siemens Ag Perforated plastics tape for mfr. of semiconductor elements - is a laminate comprising a base stratum, with epoxy adhesive layer, copper layer, and photo-lacquer layer
DE2444418A1 (en) * 1974-09-17 1976-04-01 Siemens Ag HOUSING FOR SEMICONDUCTOR UNIT

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2202802A1 (en) * 1971-02-05 1972-08-17 Philips Nv Semiconductor device
DE2124887A1 (en) * 1971-05-19 1972-12-07 Philips Patentverwaltung Electrical component, preferably semiconductor component, with foil contact
DE2414297A1 (en) * 1974-03-25 1975-10-02 Siemens Ag Perforated plastics tape for mfr. of semiconductor elements - is a laminate comprising a base stratum, with epoxy adhesive layer, copper layer, and photo-lacquer layer
DE2444418A1 (en) * 1974-09-17 1976-04-01 Siemens Ag HOUSING FOR SEMICONDUCTOR UNIT

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
In Betracht gezogenes älteres Patent: DE-PS 27 42 882 *

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3300693A1 (en) * 1982-02-05 1983-09-22 Hitachi, Ltd., Tokyo SEMICONDUCTOR ARRANGEMENT AND METHOD FOR THEIR PRODUCTION
DE3514253A1 (en) * 1984-04-19 1985-10-31 Hitachi, Ltd., Tokio/Tokyo SEMICONDUCTOR DEVICE
DE3433779A1 (en) * 1984-09-14 1986-03-27 Robert Bosch Gmbh, 7000 Stuttgart Protective layer for semiconductor circuits
DE3814469A1 (en) * 1987-04-30 1988-11-17 Mitsubishi Electric Corp Semiconductor arrangement and method for producing it

Also Published As

Publication number Publication date
DE2752655C2 (en) 1988-03-24

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