GB2157607A - Semiconductor device - Google Patents

Semiconductor device Download PDF

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Publication number
GB2157607A
GB2157607A GB08503143A GB8503143A GB2157607A GB 2157607 A GB2157607 A GB 2157607A GB 08503143 A GB08503143 A GB 08503143A GB 8503143 A GB8503143 A GB 8503143A GB 2157607 A GB2157607 A GB 2157607A
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United Kingdom
Prior art keywords
wire
copper
bonding
semiconductor device
hardness
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
GB08503143A
Other versions
GB8503143D0 (en
GB2157607B (en
Inventor
Susumu Okikawa
Hiroshi Mikino
Hiromichi Suzuki
Wahei Kitamura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Publication of GB8503143D0 publication Critical patent/GB8503143D0/en
Publication of GB2157607A publication Critical patent/GB2157607A/en
Priority to GB8702643A priority Critical patent/GB2200714B/en
Priority to GB08720643A priority patent/GB2193672B/en
Application granted granted Critical
Publication of GB2157607B publication Critical patent/GB2157607B/en
Expired legal-status Critical Current

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    • H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
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Abstract

A semiconductor device in which a lead is connected to a bonding pad of a semiconductor pellet by a copper wire, and in which the copper wire is ball-bonded to the bonding pad. The copper wire is composed of copper having a purity of higher than 99.999%, and the ball portion has a microvickers hardness of 35 to 65, to reduce the likelihood of bonding damage to the semiconductor pellet and its surface layers.

Description

SPECIFICATION -.
Semiconductor device The present invention relates to- semiconductor devices having a bonding site at which a wire is bonded to a bonding pad: In semiconductor devices, if is usual to use gold (Au) or aluminium (Al)wire for forming electrical connections between the respective bonding pads of a semicdnductor pellet and a lead part.
However, gold wire is expensive: wire is used in increasing amounts accompanying the trend toward high density semiconductor devices and the increasingly high degree of integration, and the manufacturing cost has inevitably increased: Aluminium is relatively-inexpensive,-but it corrodes readily, and is not suitable for resin moulded semicoríductor devices. It is therefore desirable to find a suitable alternative wire material that is both inexpensive and'corrosion resistant.
The inventors have therefore considered using copper (Cu) wire because it is inexpensive and has good corrosion resistance. Iria first aspect, therefore, the present invention proposes that the wire contains at least 99.999% by weight of copper.
A method used in bonding wire to semiconductor is the ball-bonding method in which the end of the wire is formed into å ball,'and'the ball is pressed'down onto a bonding pad on the semiconductor pellet.
It has been found, however, that the ball formed on the end of a standard copper wire normally has a microvickers hardness (MHv)' of 80 to 100 measured using a force of 0.05N (5 grams force). A ball of this hardness may cause the passivation film on the surface of the pellet to be broken at the time of bonding and, eventually, may causes the pellet to be' broken. Therefore the present invention proposes, in a second aspect, that the ball has a inicrovickers hardness of less than 65.
This permits the 'pellets and wiring parts of a semiconductor device to be connected electrically with a reduced risk of damage to the passivation film.
An embodiment of the invention will now be described in detail, by way of example, with reference to the accompanying drawings, in which' Figure 1 is a sectional view which shows schematicålly an embodiment of a semiconductor device according to the present invention; Figure 2 is'a sectional view- showing, on'an enlarged scale, a wire bonding portion of the semiconductor device of Fig. 1; Figures 3 and 4 are diagrams respectively illustrating the formation of a ball on the copper wire and bonding using ultrasonic waves; and Figure 5 is a diagram showing the relationship between the' purity of copper wire and the bonding damage occurrence percentage.
Referrinq first to Fig. 1, a semiconductor device has a semiconductor pellet 3 attached to a tab 2 of a copper alloy lead frame by a junction layer 4 composed of ån adhesive, for example an eutectic of goldsilicon or silver-epoxy paste. As shown in more detail in Fig. 2, a bonding pad 5 of the pellet 3 is composed of aluminium while a bonding wire 6 is composed of copper.
The pad 5 of the pellet 3 is electrically connected via the bonding wire 6 to an aluminium film 14 formed on an inner lead portion 7 of a lead 1. The film 14 may be plated with gold, silver or copper.
After the wires are bonded to the pad, the pellet 3, bonding wires 6 and the like are moulded with a plastic resin 8. With reference to Figs. 3 and 4, to bond the wire 6 according to this embodiment, a ball portion 6a is formed at the end of the wire by an electric discharge that takes place between the end of the wire 6 held by a wire bonder (not shown) and an electrode 9 of the wire bonden By selecting the material of the wire 6, as will be described later, the ball portion 6a assumes a hardness suitable for bonding.
Using an ultrasonic bonding tool 10 which is shown in Fig. 4, the ball portion 6a is pressed onto the aluminium pad 5 on the pellet 3, and is firmly bonded thereto by ultrasonic vibration.
The ball portion 6a which is pressed forms a bonding portion 6b. The bonding portion 6b covers the aluminium pad 5 that is exposed through a window in a final passivation film 13.
In this embodiment the wire-6 is refined to a'purity of 99.999 /O by weight or higher by the zone refining method and/or by electrolysis, and the ball portion thereby consists of copper of which the microvickers hardness (MHv) is controlled to lie within the range of 35 to 65 (at 5g.f). - By forming copper wire having a hardness within the abovementioned range, it is possible to perform ball bonding without destroying the passivation film 12 on the pellet 3. Moreover, a wire and bond having a sufficiently large strength are obtained. If the ball portion 6a is too hard, bonding damage occurs, i.e., the silicon dioxide (six2) layer 12 under the aluminium pad 5 is destroyed by the force at the time of wire bonding.In other words, as the microvickers' hardness at the'ball' portion 6a of the wire 6 exceeds 65, the;pa'ssiva#ion film 12 is destroyed at the time'of bonding.
Fig.'5' is a diagram showing the reiationship' between the percentage of bonding damage occurrence and the purity of the wire, wherein the ordinate represents the bonding damage rate, i.e., represents the percentage'of samples in which'cracks develop in the insulating film 12when bonding is effected using a bonding tool 10 with a force of 80 grams.
The abscissa represents the purity of copper wire, in this case the percentage by weight of copper in the wire. For example, the term "3N" (three nines) indicates that the wire contains at least 99.9% by weight of copper; the microvickers (MHv) of the ball portion is then about 120. Copper wire of 4N (four nines) contains at least 99.99% by weight of copper and has a microvickers hardness (MHv) of about 90 in the ball portion. At 5N (copper content is 99.999% by weight or higher), the microvickers hardness (MHv) is about 65, and at 6N (copper content is 99.9999% by weight or more), the microvickers hardness is about 45. Wire which lies between 6N and 7N,(copper content is 99.99999% by weight or more) wire has a microvickers hardness (MHv) of about 30. The hardness of copper wire depends mainly upon its purity.
To confine the bonding-damage rate within a permissible range of about 10% or less, the copper wire 6 should have a purity of higher than 99.999% by weight (five nines) or should have a microvickers hardness (MHv) of less than 65 in the ball portion 6a. The bonding damage rate is very slight, particularly when the copper wire has a microvickers hardness (MHv) of less than 50 in the ball portion 6a.
The present invention includes the use of copper wires with a purity substaritially higher than 99.999% by weight and copper wires of which the microvickers hardness in the ball, portion can be regarded as substantially less than 65.
Copper wires produced by different refining methods may contain different impurities in different ratios. Therefore, even copper wires having the same percentage by weight of copper may exhibit different degrees of hardness.
Further, even when copper wires of the same hardness are used,, the bonding damage rate may vary depending upon the bonding condition.
Variance due to these factors appears to the form of variance in the bonding damage rate in Fig. 5.
Moreover, the microvickers hardness varies depending upon the measuring method. The method of measuring the microvickers hardness has been specified under Z2244 of Japanese Industrial Standard, according to which a sharp end of a small diamond crystal is pressed onto a material to be measured under the application of a predetermined force, and microvickers hardness is determined by measuring the depth to which the diamond tip is driven. However, the depth to which the diamond tip is driven may vary depending upon whether the diamond tip hits a,grain of copper or a grain boundary. Therefore, the microvickers hardness may appear to vary.
In this embodiment, the microvickers hardness is measured in accordance with the aforementioned method under the appilcation of a force of 5 grams, and is expressed as 5 g.f.
The easiest means for obtaining a microvickers hardness,(MHv) of 35 to 65 in the ball portion 6a of the copper wire 6 is to increase the purity of the copper to 99.999% or more by weight.
Desirable methods of obtaining copper,wires having a purity of higher than 99.999% by weight include zone refining and electrolysis.
TABLE 1 linpurities Ag Fe Bi As Sb p Zn Pb Wi Sn Si Total Cu plate 7 6 1 1 < 1 < 0.5 < 1 1 1 1 1 < 21 After Elect- rolysis L 3 1 < 1 i < C.5 < 1 1 1 1 1 < -5 After Zone Refining Table 1 shows the methods which the inventors have employed to increase the purity of copper wires, and the results. Numerals in Table represent the concentrations of impurities in ppm (parts per million), so that < 1 represents a concentration of impurity less than 1 ppm.
First, a copper plate is prepared. The copper plate contained various.impurities shown in Table 1 in amounts of about 20 - 21 ppm.
Copper is refined by electrolysis using sulphuric acid. Electrolysis may be carried out once or several times. It is necessary to increase the purity of the sulphuric acid solution which is the electrolyte. After electrolysis, impurities in the-copper, particularly, iron (Fe) are approximately halved.
An ingot made of copper after electrolysis is then put into the zone refininq process which is effected once or several times. After zone refining, the concentration of impurities in the cooper decreases to less than 1 0 ppm. in particular, the content of nickel (Ni) decreases to less than 1 ppm.
According to a study conducted by the inventors, the hardnéss of copper is particularly affected by iron and nickel imourities. The contents of iron and nickel can be reduced through electrolysis and zone refining.
By performing electrolysis and zone refining several times respectivelyj the purity of the copper can be increased to that the microvickers hardness in a formed ball portion may be 35., However. if the degree of hardness is too low, the wire tends to be deformed, which is not desirable.
When the microvickers hardness ranges from 40 to 50 the number of times that electrolysis and zone refining need be performed is fewer, enabling the, manufacturing cost to be reduced. To obtain a copper wire having a microvickers hardness of less than 35, electrolvsis and zone refining must be performed many times: therefore such copper wire is very expensive.
To bond the coooer wire 6 to the bonding pad 5 of the pellet 3, a ball may be formed at the end of the wire usinq a hydrogen torch, electrical discharge, or the like.
Bonding of the copper wire may be achieved by thermocompresssion bonding only or by use of ultrasonic vibration in addition to the thermocompression bonding. In bonding the copper wire to the lead 1, a ball need not necessarily be formed, but a ball may be formed as a matter of course without presenting any problem.
The use of a copper wire having a microvickers hardness (MHv) of 35 to 65 (at 5 f.g) in the ball portion also provides a good corrosion resistance.
Corrosion of a copper wire is triggered by impurities contained therein: the greater the degree of purity of copper, the greater the corrosion resistance. Copper wire resists corrosion more than aluminium wire does.
Refining of the wire by zone refining or electrolysis permits a very pure copper wire to be fabricated which, for the reasons above, has greatly improved corrosion resistance.
Moreover, the hardness of the copper wire is such as to produce a qood shape of loop between the pellet 3 and lead 7.
For the abovementioned reasons, the invention may permit the fabrication of a highly reliable semiconductor device at reduced cost.
An embodiment nf the invention has been discussed above. It will be appreciated however, that the present invention is not limited to the features of the aforementioned embodiment, but can be modified in a variety of ways.
For example, the foregoing description has chiefly dealt with a semiconductor device of the resin moulded type. in the field of art that served as the background of the invention. The invention, however, can clearly be adapted to any semiconductor device that uses wires, such as the hermetically sealed type.

Claims (14)

1. A semiconductor device having a bonding site at which a wire is bonded to a bondinq pad of a semiconductor pellet, wherein the wire is of copper and a ball portion on the wire at the bonding site has a microvickers hardness of less than 65.
2. A semiconductor device according to claim 1, wherein the ball portion has a microvickers hardness between 35 and 65.
3. A semiconductor device according to claim 2, wherein the ball portion has a microvickers hardness between 40 and 50.
4. A semiconductor device according to any one of claims 1 to 3, wherein said wire contains copper in an amount of greater than 99.999% by weight.
5. A semiconductor device according to any one of the precedinq claims. wherein the semiconductor pellet and wire are moulded with a resin.
6. A semiconductor device having a bonding site at which a wire is bonded to a bonding pad of a semiconductor pellet, wherein the wire contains copper in an amount greater than 99.999% by weight.
7. A semiconductor device according to claim 6, wherein the wire contains less than 2 ppm of iron.
8. A semiconductor device according to claim 6 or claim 7. wherein the wire contains less than 1 ppm of nickel.
9. A semiconductor device according to any one of claims 6 to 8, wherein a ball portion on the wire at the bonding site has a microvickers hardness of less than 65.
10. A semiconductor device accordinq to claim 6, wherein said wire is refined by electrolysis and zone refining.
11. A semiconductor device substantially as herein described with reference to and as illustrated in the accompanying drawings.
12. A method of bonding a copper wire to a bonding pad of a semiconductor pellet, the method includinq the step of forming a ball portion having a microvickers hardness of less than 65 on the wire at a site that is to be bonded to the bonding pad.
13. A method of bonding a copper wire to a bonding pad of a semiconductor pellet, the method includinq the step of forming a ball portion on the wire at a site that is to be bonded to the bonding pad, and wherein the copper wire contains copper in an amount greater than 99.999% by weight.
14. A rn-ethod of bonding a copper wire to a bonding pad substantially as herein described with reference to the accompanying drawings.
GB08503143A 1984-04-19 1985-02-07 Semiconductor device Expired GB2157607B (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
GB8702643A GB2200714B (en) 1985-02-07 1987-02-06 Mechanical transmissions
GB08720643A GB2193672B (en) 1984-04-19 1987-09-02 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59079113A JPS60223149A (en) 1984-04-19 1984-04-19 Semiconductor device

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GB8503143D0 GB8503143D0 (en) 1985-03-13
GB2157607A true GB2157607A (en) 1985-10-30
GB2157607B GB2157607B (en) 1988-09-28

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GB08503143A Expired GB2157607B (en) 1984-04-19 1985-02-07 Semiconductor device

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JP (1) JPS60223149A (en)
KR (1) KR930008979B1 (en)
DE (1) DE3514253A1 (en)
FR (2) FR2563380B1 (en)
GB (1) GB2157607B (en)
HK (2) HK40390A (en)
IT (1) IT1184445B (en)
MY (1) MY102548A (en)

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US4976393A (en) * 1986-12-26 1990-12-11 Hitachi, Ltd. Semiconductor device and production process thereof, as well as wire bonding device used therefor
WO2006094654A1 (en) * 2005-03-08 2006-09-14 W.C. Heraeus Gmbh Copper bonding or superfine wire with improved bonding and corrosion properties
EP2133915A1 (en) * 2008-06-09 2009-12-16 Micronas GmbH Semiconductor assembly with specially formed bonds and method for manufacturing the same
US8216442B2 (en) 2004-01-29 2012-07-10 Jx Nippon Mining & Metals Corporation Ultrahigh-purity copper and process for producing the same
US9476134B2 (en) 2008-09-30 2016-10-25 Jx Nippon Mining & Metals Corporation High purity copper and method of producing high purity copper based on electrolysis
EP4163966A1 (en) * 2021-10-11 2023-04-12 NXP USA, Inc. Wire bonded semiconductor device and method of manufacturing the same

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JPS62111455A (en) * 1985-11-08 1987-05-22 Mitsubishi Metal Corp Very thin high-purity copper wire for wire-bonding semiconductor device
JPS6294969A (en) * 1985-10-22 1987-05-01 Mitsubishi Metal Corp Bonding wire for semiconductor device
JPS61224443A (en) * 1985-03-29 1986-10-06 Mitsubishi Metal Corp Bonding wire for semiconductor device
JPH0736431B2 (en) * 1985-06-28 1995-04-19 三菱マテリアル株式会社 Manufacturing method of high-purity copper for bonding wire of semiconductor device
JPS6222469A (en) * 1985-07-22 1987-01-30 Mitsubishi Metal Corp Bonding wire for semiconductor device

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Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4976393A (en) * 1986-12-26 1990-12-11 Hitachi, Ltd. Semiconductor device and production process thereof, as well as wire bonding device used therefor
EP0276564B1 (en) * 1986-12-26 1992-03-11 Hitachi, Ltd. Wire bonding
US8216442B2 (en) 2004-01-29 2012-07-10 Jx Nippon Mining & Metals Corporation Ultrahigh-purity copper and process for producing the same
WO2006094654A1 (en) * 2005-03-08 2006-09-14 W.C. Heraeus Gmbh Copper bonding or superfine wire with improved bonding and corrosion properties
US7645522B2 (en) 2005-03-08 2010-01-12 W.C. Heraeus Gmbh Copper bonding or superfine wire with improved bonding and corrosion properties
CN101138086B (en) * 2005-03-08 2011-08-31 W.C.贺利氏有限公司 Copper bonding or superfine wire with improved bonding and corrosion properties
EP2133915A1 (en) * 2008-06-09 2009-12-16 Micronas GmbH Semiconductor assembly with specially formed bonds and method for manufacturing the same
US8174104B2 (en) 2008-06-09 2012-05-08 Micronas Gmbh Semiconductor arrangement having specially fashioned bond wires
US9476134B2 (en) 2008-09-30 2016-10-25 Jx Nippon Mining & Metals Corporation High purity copper and method of producing high purity copper based on electrolysis
EP4163966A1 (en) * 2021-10-11 2023-04-12 NXP USA, Inc. Wire bonded semiconductor device and method of manufacturing the same

Also Published As

Publication number Publication date
MY102548A (en) 1992-07-31
KR850008244A (en) 1985-12-13
IT1184445B (en) 1987-10-28
FR2563380A1 (en) 1985-10-25
JPS60223149A (en) 1985-11-07
GB8503143D0 (en) 1985-03-13
GB2157607B (en) 1988-09-28
FR2563381A1 (en) 1985-10-25
IT8520336A0 (en) 1985-04-15
HK40190A (en) 1990-06-01
DE3514253A1 (en) 1985-10-31
FR2563380B1 (en) 1987-02-27
HK40390A (en) 1990-06-01
KR930008979B1 (en) 1993-09-17

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