JPS60223149A - 半導体装置 - Google Patents

半導体装置

Info

Publication number
JPS60223149A
JPS60223149A JP59079113A JP7911384A JPS60223149A JP S60223149 A JPS60223149 A JP S60223149A JP 59079113 A JP59079113 A JP 59079113A JP 7911384 A JP7911384 A JP 7911384A JP S60223149 A JPS60223149 A JP S60223149A
Authority
JP
Japan
Prior art keywords
wire
bonding
pellet
semiconductor device
micro
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP59079113A
Other languages
English (en)
Inventor
Susumu Okikawa
進 沖川
Hiroshi Mikino
三木野　博
Hiromichi Suzuki
博通 鈴木
Wahei Kitamura
北村　和平
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP59079113A priority Critical patent/JPS60223149A/ja
Priority to FR8501363A priority patent/FR2563380B1/fr
Priority to GB08503143A priority patent/GB2157607B/en
Priority to KR1019850002025A priority patent/KR930008979B1/ko
Priority to IT20336/85A priority patent/IT1184445B/it
Priority to DE19853514253 priority patent/DE3514253A1/de
Priority to FR8509468A priority patent/FR2563381A1/fr
Publication of JPS60223149A publication Critical patent/JPS60223149A/ja
Priority to GB08720643A priority patent/GB2193672B/en
Priority to MYPI87001784A priority patent/MY102548A/en
Priority to HK403/90A priority patent/HK40390A/xx
Priority to HK401/90A priority patent/HK40190A/xx
Pending legal-status Critical Current

Links

Classifications

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Abstract

(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。

Description

【発明の詳細な説明】 ［技術分野］ 本発明は、半導体装置、特に半導体装置の電気的接続用
のワイヤに適用して有効な技術に関するものである。
［背景技術］ 半導体装置において、ペレットのポンディングパッドと
リード部との電気的接続に際しては金（Ａｕ）またはア
ルミニウム（ＡＩ）等のワイヤを用いることが知られて
いる。
しかし、金を用いたワイヤは高価であり、半導体装置の
高密度・高集積化に伴いワイヤの必要量も増大し、コス
ト高にならざるを得ない。この点アルミニウムは材料と
しては安価であるが、耐蝕性が悪く、特にレジンモール
ド型の半導体には適さない。
そのため、本発明者はワイヤの材料として、安価で、し
かも耐蝕性に優れた銅（Ｃｕ）を用いることを考えた。
しかし、銅を用いたワイヤのボール部の硬度が硬＜［マ
イクロビッカース硬度ＭＨＶ＝８０〜１００　（於５ｇ
−ｆ）］　、ボンディング時にパンシベーション膜を破
壊し、ペレットを破損してしまうという問題があり、ま
たあまり軟らかすぎても強度不足やレジン流れ等の問題
を生じることが本発明者によって明らかにされた。
なお、ボンディングワイヤについては、雑誌「電子材料
Ｊ１９Ｂ３年８月号Ｐ８６以下に示されている。
［発明の目的］ 本発明の目的はパッシベーション膜の破壊や強度不足を
生じることなく半導体装置のベレットと配線部の電気的
接続を行うことのできる技術を提供することにある。
本発明の他の目的は低コストで信頼性の高い半導体装置
の製造を行うことができる技術を提供することにある。
本発明の前記ならびにその他の目的と新規な特徴は、本
明細書の記述および添付図面から明らかになるであろう
。
［発明の概要］ 本願において開示される発明のうち代表的なものの概要
を簡単に説明すれば、次の通りである。
すなわち、ポンディングワイヤのポール硬度としてマイ
クロビッカース硬度ＭＨＶ＝３５〜６５（於５ｇ−ｆ）
の銅線を用いることによりベレットのパッシベーション
膜等の破損を防止し、耐蝕性に優れた低コストの半導体
装置を提供することができ、前記目的を達成するもので
ある。
［実施例］ 図は、本発明による一実施例である半導体装置を、その
ほぼ中心を通る面における断面図で示したものである。
本実施例の半導体装置は、たとえば４２ＡＩｌｏｙや銅
又は銅を含む合金よりなるリードフレーム１のタブ２の
上にシリコン（Ｓｉ）よりなるベレット３をｔＪｊ（Ａ
ｇ）ペースト４で取り付け、該ペレット３のボンディン
グパ・７ドとインナーリード部５　（この部分にはＡｕ
、ＡｇまたはＣｕメッキしてあってもよいし、無くても
よい）とをワイヤ６で電気的に接続した後、前記ペレッ
ト３、ワイヤ６、リードフレーム１のタブ２及びインナ
ーリード部５をモールド用レジン７でトランスファーモ
ールドし封止才るご／Ｌ−により完成されてなるもので
ある。
本実施例の特徴は、前記ワイヤ６がゾーンリファイニン
グ法や再電解により純度が９９．９９９重量％以上の高
純度に精製され、ボール部のマイクロビッカース硬度が
ＭＨｖ＝３５〜６５（於５ｇ−ｆ）にコントロールされ
た銅線より成ることにある。
すなわち、銅線を前記数値の硬度にすることにヨリ、ベ
レット３上のバンシベーション１１１壊することなくポ
ールボンディングを行うことができ、しかも十分な強度
のワイヤを得ることができるのである。
言い換えれば、ワイヤ６のボール部のマイクロビッカー
ス硬度が６５を超えると、ボンディング時にペレット３
のボンディング部のパッシベーション膜を破壊してしま
い、またボール部のマイクロビッカース硬度が３５より
も小さいと、接合強度が弱く、ボンディング強度不良等
の問題を生じるものであり、前記硬度範囲においてはい
ずれの問題も解消できるものである。
なお、マイクロビッカース硬度は５ｇの加Ｍ（ｆｏｒｃ
ｅ　）を加えて実測した値を示しており、これを５ｇ−
ｆとして示している。
銅ワイヤ６においては、ボール部の硬度をＭＨｖ＝３５
〜６５とする最も容易な手段は、銅の純度を９９．９９
９重量％以上までに高めることである。
９９．９９９重量％以上の純度の銅ワイヤを得る最も良
い方法として、ゾーンリファイニング法や再電解法を挙
げることができる。
この銅ワイヤ６を用いて、少なくともファーストボンド
（ペレット３のポンデイングパツドへのボンド）を行う
にあたって、水素トーチ等を用いてワイヤの先端にボー
ルを形成し、ボールボンディングする。この際、熱圧着
のみでも、熱圧着に超音波振動を加えてもよい。セカン
ドポンド（リード１へのポンド）は必ずしもボールボン
ディングする必要はないが、ポールボンディングしても
特に問題はない。
［効果］ （ｌ）、ボンディングワイヤとしてボール部のマイクロ
ビッカース硬度ＭＨｖ＝３５〜６５（於５ｇ−・ｆ）の
銅線を用いることにより、ボンディング作業時のパッシ
ベーション膜の破壊を防止でき、しかも十分な強度を得
ることができる。
（２）、ボンディングワイヤとしてポール部のマイクロ
ビッカース硬度ＭＨｖ＝３５〜６５（於５ｇ−ｆ）の銅
線を用いることにより、耐蝕性の良好な半導体装置を提
供することができる。
（３）、ワイヤをゾーンリファイニング法や再電解で精
製することにより、高純度の銅ワイヤが得られ、しかも
耐蝕性やループ形状を大１コに向上させることができる
。
（４）、前記ｆｌ＋、（２）、（３）より、信頼性の高
い半導体装置を安価に提供することができる。
以上本発明者によってなされた発明を実施例に基づき具
体的に説明したが、本発明は前記実施例に限定されるも
のではなく、その要旨を逸脱しない範囲で種々変更可能
であることはいうまでもな［利用分野］ 以上の説明では主として本発明者によってなされた発明
をその背景となった利用分野であるレジンモールド型の
半導体装置に適用した場合について説明したが、それに
限定されるものではなく、たとえば、気密封止型の半導
体装置等、ワイヤを用いるものであればいかなる半導体
装置にも適用できる。
【図面の簡単な説明】
図は、本発明による一実施例である半導体装置を示す断
面図である。 ■・・・リードフレーム、２・・・タフ、３・・・ペレ
ット、４・・・ペースト、５・・・インナーリード部、
６・・・ワイヤ、７・・・モールド用レジン。

Claims (1)

  1. 【特許請求の範囲】 １、ペレットのポンディングパッドとリードとをボンデ
    ィングワイヤをボールボンディングすることによって接
    続する半導体装置において、ワイヤ先端に形成したボー
    ル硬度としてマイクロビッカース硬度ＭＨＶ＝３５〜６
    ５の銅線を用いることを特徴とする半導体装置。 ２、ワイヤが９９．９９９重量％以上の高純度の銅線で
    あることを特徴とする特許請求の範囲第１項記載の半導
    体装置。 ３、ワイヤがゾーンリファイニング法または再電解によ
    り精製された銅線であることを特徴とする特許請求の範
    囲第１項または第２項記載の半導体装置。
JP59079113A 1984-04-19 1984-04-19 半導体装置 Pending JPS60223149A (ja)

Priority Applications (11)

Application Number Priority Date Filing Date Title
JP59079113A JPS60223149A (ja) 1984-04-19 1984-04-19 半導体装置
FR8501363A FR2563380B1 (fr) 1984-04-19 1985-01-31 Dispositif a semi-conducteurs. raccordement electrique des pastilles et des elements de cablage a un fil de cuivre
GB08503143A GB2157607B (en) 1984-04-19 1985-02-07 Semiconductor device
KR1019850002025A KR930008979B1 (ko) 1984-04-19 1985-03-27 반도체 장치
IT20336/85A IT1184445B (it) 1984-04-19 1985-04-15 Dispositivo a semiconduttori con filo di collegamento elettrico perfezionato
DE19853514253 DE3514253A1 (de) 1984-04-19 1985-04-19 Halbleitereinrichtung
FR8509468A FR2563381A1 (fr) 1984-04-19 1985-06-21 Raccordement electrique des pastilles et des elements de cablage d'un dispositif a semi-conducteurs a un fil de cuivre
GB08720643A GB2193672B (en) 1984-04-19 1987-09-02 Semiconductor device
MYPI87001784A MY102548A (en) 1984-04-19 1987-09-21 Semiconductor device
HK403/90A HK40390A (en) 1984-04-19 1990-05-24 Semiconductor device
HK401/90A HK40190A (en) 1984-04-19 1990-05-24 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59079113A JPS60223149A (ja) 1984-04-19 1984-04-19 半導体装置

Publications (1)

Publication Number Publication Date
JPS60223149A true JPS60223149A (ja) 1985-11-07

Family

ID=13680847

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59079113A Pending JPS60223149A (ja) 1984-04-19 1984-04-19 半導体装置

Country Status (8)

Country Link
JP (1) JPS60223149A (ja)
KR (1) KR930008979B1 (ja)
DE (1) DE3514253A1 (ja)
FR (2) FR2563380B1 (ja)
GB (1) GB2157607B (ja)
HK (2) HK40190A (ja)
IT (1) IT1184445B (ja)
MY (1) MY102548A (ja)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61224443A (ja) * 1985-03-29 1986-10-06 Mitsubishi Metal Corp 半導体装置用ボンデイングワイヤ
JPS622645A (ja) * 1985-06-28 1987-01-08 Mitsubishi Metal Corp 半導体装置用ボンデイングワイヤ
JPS6222469A (ja) * 1985-07-22 1987-01-30 Mitsubishi Metal Corp 半導体装置用ボンデイングワイヤ
JPS6294969A (ja) * 1985-10-22 1987-05-01 Mitsubishi Metal Corp 半導体装置用ボンデイングワイヤ
JPS62111455A (ja) * 1985-11-08 1987-05-22 Mitsubishi Metal Corp 半導体装置のボンディングワイヤ用高純度銅極細線の製造法

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4976393A (en) * 1986-12-26 1990-12-11 Hitachi, Ltd. Semiconductor device and production process thereof, as well as wire bonding device used therefor
JP4519775B2 (ja) 2004-01-29 2010-08-04 日鉱金属株式会社 超高純度銅及びその製造方法
DE102005011028A1 (de) 2005-03-08 2006-09-14 W.C. Heraeus Gmbh Kupferbonddraht mit verbesserten Bond- und Korrosionseigenschaften
EP2133915A1 (de) * 2008-06-09 2009-12-16 Micronas GmbH Halbleiteranordnung mit besonders gestalteten Bondleitungen und Verfahren zum Herstellen einer solchen Anordnung
WO2010038641A1 (ja) 2008-09-30 2010-04-08 日鉱金属株式会社 高純度銅及び電解による高純度銅の製造方法
CN115966478A (zh) * 2021-10-11 2023-04-14 恩智浦美国有限公司 半导体器件和封装的方法

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3507033A (en) * 1965-01-06 1970-04-21 Western Electric Co Ultrasonic bonding method
DE1295844B (de) * 1965-03-30 1969-05-22 Nielsen Verwendung einer Kupferlegierung fuer Fahrdraehte
FR1524436A (fr) * 1966-04-14 1968-05-10 Philips Nv Dispositif semi-conducteur et circuit équipé d'un tel dispositif
US3421888A (en) * 1966-08-12 1969-01-14 Calumet & Hecla Corp Copper alloy
FR1536483A (fr) * 1967-07-17 1968-08-16 British Insulated Callenders Procédé de production d'éléments en cuivre ayant une résistance mécanique élevée et une conductivité élevée
DD133285A1 (de) * 1977-09-05 1978-12-20 Ruediger Uhlmann Bonden eines drahtes mit einer anschlussflaeche
DE2752655A1 (de) * 1977-09-23 1979-06-07 Blaupunkt Werke Gmbh Elektronisches bauelement
JPS56150830A (en) * 1980-04-25 1981-11-21 Hitachi Ltd Semiconductor device
DE3104960A1 (de) * 1981-02-12 1982-08-26 W.C. Heraeus Gmbh, 6450 Hanau "feinstdraht"
NL184184C (nl) * 1981-03-20 1989-05-01 Philips Nv Werkwijze voor het aanbrengen van kontaktverhogingen op kontaktplaatsen van een electronische microketen.
JPS59155161A (ja) * 1983-02-23 1984-09-04 Daiichi Denko Kk 半導体素子のボンデイング用ワイヤ
FR2555813B1 (fr) * 1983-09-28 1986-06-20 Hitachi Ltd Dispositif a semi-conducteurs et procede de fabrication d'un tel dispositif

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61224443A (ja) * 1985-03-29 1986-10-06 Mitsubishi Metal Corp 半導体装置用ボンデイングワイヤ
JPS622645A (ja) * 1985-06-28 1987-01-08 Mitsubishi Metal Corp 半導体装置用ボンデイングワイヤ
JPS6222469A (ja) * 1985-07-22 1987-01-30 Mitsubishi Metal Corp 半導体装置用ボンデイングワイヤ
JPS6294969A (ja) * 1985-10-22 1987-05-01 Mitsubishi Metal Corp 半導体装置用ボンデイングワイヤ
JPS62111455A (ja) * 1985-11-08 1987-05-22 Mitsubishi Metal Corp 半導体装置のボンディングワイヤ用高純度銅極細線の製造法
JPH0445978B2 (ja) * 1985-11-08 1992-07-28 Mitsubishi Materials Corp

Also Published As

Publication number Publication date
GB2157607B (en) 1988-09-28
MY102548A (en) 1992-07-31
DE3514253A1 (de) 1985-10-31
IT1184445B (it) 1987-10-28
GB2157607A (en) 1985-10-30
KR850008244A (ko) 1985-12-13
FR2563381A1 (fr) 1985-10-25
FR2563380A1 (fr) 1985-10-25
KR930008979B1 (ko) 1993-09-17
HK40390A (en) 1990-06-01
IT8520336A0 (it) 1985-04-15
FR2563380B1 (fr) 1987-02-27
GB8503143D0 (en) 1985-03-13
HK40190A (en) 1990-06-01

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