FR2563380A1 - Dispositif a semi-conducteurs. raccordement electrique des pastilles et des elements de cablage a un fil de cuivre - Google Patents

Dispositif a semi-conducteurs. raccordement electrique des pastilles et des elements de cablage a un fil de cuivre Download PDF

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Publication number
FR2563380A1
FR2563380A1 FR8501363A FR8501363A FR2563380A1 FR 2563380 A1 FR2563380 A1 FR 2563380A1 FR 8501363 A FR8501363 A FR 8501363A FR 8501363 A FR8501363 A FR 8501363A FR 2563380 A1 FR2563380 A1 FR 2563380A1
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Prior art keywords
copper
wire
semiconductor device
ball
vickers
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Granted
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FR8501363A
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FR2563380B1 (fr
Inventor
Susumu Okikawa
Hiroshi Mikino
Hiromichi Suzuki
Wahei Kitamura
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Hitachi Ltd
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Hitachi Ltd
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Abstract

L'INVENTION CONCERNE UN DISPOSITIF A SEMI-CONDUCTEURS. DANS CE DISPOSITIF A SEMI-CONDUCTEURS COMPORTANT UN FIL DE LIAISON EN CUIVRE 6 RELIANT ELECTRIQUEMENT UN FIL 1 A UN PLOT DE LIAISON 5 QUI EST FORME SUR UNE PASTILLE SEMI-CONDUCTRICE 3, UNE PARTIE EN FORME DE BOULE 6A FORMEE A L'EXTREMITE DU FIL 6 SUR LE COTE DUDIT PLOT DE LIAISON 5 POSSEDE UNE MICRODURETE VICKERS INFERIEURE A 65. APPLICATION NOTAMMENT AUX DISPOSITIFS A SEMI-CONDUCTEURS RELIES A DES FILS ET SCELLES HERMETIQUEMENT DANS UNE RESINE.

Description

i
La présente invention concerne un dispositif à se-
miconducteurs et notamment un tel type de dispositif qui peut être adapté à un dispositif à semiconducteurs utilisant
un fil pour son raccordement électrique.
Dans les dispositifs à semiconducteurs, il est d'une pratique largement usitée d'utiliser un fil d'or (Au) ou un fil d'aluminium (Al) pour effectuer le raccordement électrique réciproque de plots de liaison ou de connexion
d'une pastille et d'éléments formant conducteurs.
Cependant le fil d'or est onéreux: le fil est utilisé en des quantités croissantes, ce qui s'accompagne
de la tendance visant à réaliser des dispositifs h semicon-
ducteurs de haute densité, et du degré de plus en plus éle-
vé d'intégration, et inévitablement le c8ut de fabrication est accru. L'aluminium est relativement bon marché, mais se corrode aisément et ne convient pas pour des dispositifs
à semiconducteurs moulés dans la résine.
C'est pourquoi les auteurs à la base de la présen-
te invention ont imaginé d'utiliser du cuivre (Cu) qui est
disponible à bon marché et qui présente une excellente ré-
sistance à la corrosion en tant que matériau servant à réa-
liser un fil.
Cependant les auteurs à la base de la présente in-
vention ont trouvé que la partie en forme de boule formée pour la liaison ou le soudage à l'extrémité du fil de cuivre possède une dureté égale à une valeur comprise entre 80 et
selon l'échelle de microdureté Vickers MHv, qui est me-
surée en utilisant une force de 5 grammes (Sgf) et ceci
entraîne une rutpure de la pellicule de passivation au mo-
ment de la liaison et éventuellement provoque la rupture
de la pastille.
Le but de la présente invention est de fournir
une technique qui permet le raccordement électrique des pas-
tilles et des éléments de câblage d'un dispositif à semi-
conducteurs à un fil de cuivre, sans provoquer une destruc-
tion ouun affaiblissement de la pellicule de passivation.
Un autre but de la présente invention est de four-
nir une technique permettant de fabriquer des dispositifs à semiconducteurs conservant une fiabilité élevée, et ce à des coûts réduits, en utilisant un fil de cuivre.
Les objectifs indiqués plus haut ainsi que d'au-
tres objectifs et de nouvelles caractéristiques de la pré-
sente invention ressortiront à l'évidence dans la descrip-
tion donnée ci-après de la présente invention et des dessins
annexés.
On va décrire brièvement ci-après un exemple re-
présentatif de la présente invention.
Conformément à la présente invention il est prévu un dispositif à semiconducteurs, dans lequel la pellicule
de passivation de la pastille ne peut pas faire l'objet d'u-
ne rupture et présente une excellente résistance à la corro-
sion et est fabriquée à un coût réduit, en utilisant un fil de cuivre dans lequel la partie en forme de boule formée pour la liaison à l'extrémité d'un fil de liaison possède une microdureté Vickers comprise entre 35 et 65, mesurée
en utilisant une force de 5 grammes (5g.f).
D'autres caractéristiques et avantages de la pré-
sente invention ressortiront de la description donnée ci-
après prises en référence aux dessins annexes, sur lesquels la figure 1 est une vue en coupe transversale qui représente schématiquement un dispositif à semiconducteurs conforme à la présente invention; la figure 2 est une vue en coupe montrant, à plus grande échelle, une partie du dispositif à semiconducteurs de la figure 1, intervenant dans la liaison ou fixation du fil; les figures 3 et 4 sont des schémas illustrant la formation de la boule sur le fil de cuivre et montrant la liaison réalisée en utilisant les ondes ultrasoniques; et
la-figure 5 est un diagramme illustrant la rela-
tion entre la dureté du fil de cuivre et le poucentage d'ap-
parition d'endommagements de la liaison.
Ci-après on va donner une description de la for-
me de réalisation préférée de l'invention.
Dans un dispositif à semiconducteurs selon la fi-
gure 1, une pastille semiconductrice 3 est fixée à une lan-
guette 2 formée d'un cadre de montage en alliage de cuivre
au moyen d'une couche de jonction 4 constituée par un adhé-
sif tel qu'un eutectique d'or et de silicium ou bien d'une
pâte formée d'argent et d'une résine époxy.
Un plot de liaison ou de jonction 5 de la pastille 3 est constitué par de l'aluminium, comme représenté sur la figure 2, tandis qu'un fil de liaison ou de jonction 6 est constitué par du cuivre. Le plot 5 de la pastille 3 est
raccordé éléctriquement par l'intermédiaire du fil de liai-
son 6 à une pellicule d'aluminium 14 formée sur une partie intérieure 7 d'un conducteur 1. La pellicule 14 peut être
une pellicule plaquée d'or, d'argent ou de cuivre.
Apres que tous les fils ont été fixés, on in-
sère la pastille 3, les fils de liaison 6 et analogue dans
un moule formé d'une résine plastique 8. -
Pour réaliser la fixation ou le soudage du fil 6 conformément à la présente invention, on forme une partie en forme de boule 6a à l'extrémité du fil à l'aide d'une
décharge électrique, qui est réalisée en travers de l'ex-
trémité du fil ci est maintenue par un dispositif de fixa-
tion de fil par soudage (non représenté) et une électrode
9 de ce dispositif de fixation du fil (non représentée).
En choisissant le matériau constituant le fil 10 comme ce-
la sera décrit ultérieurement, il s'avère que la partie en
forme de boule 6a prend la dureté convenant pour la liaison.
Grâce à l'utilisation d'un outil de soudage par ultrasons 10, qui est représenté sur la figure 4, on presse la partie en forme de boule 6a sur le plot en aluminium 5 de la pastille 3, et on le fixe fermement à ce plot au moyen
d'une vibration ultrasonique.
La partie en forme de boule 6a, qui est comprimée, forme une partie de liaison ou de fixation 6b. La partie de liaison 6b recouvre le plot en aluminium 5 qui est mis à nu à travers une fenêtre ménagée dans une pellicule finale de
passivation 13.
La caractéristique de la présente invention réside
dans le fait que le fil 6 est affiné pour présenter une pu-
reté égale à 99,999 % en poids ou plus au moyen du procédé
de raffinage de zone ou bien par électrolyse, et que la par-
tie en forme de boule est constituée par du cuivre dont la microdureté Vickers NHv est réglée dans une gamme s'étendant
entre 35 et 65 (pour 5g.f).
Au moyen de la formation d'un fil de cuivre possé-
dant une dureté qui se situe dans la gamme mentionnée plus haut, il est possible de réaliser une liaison par soudure à boule sans détruire la pellicule de passivation située-sur la pastille 3. En effet, on obtient un fil possédant une résistance suffisamment élevée. Si la partie en forme de boule 6a est trop dure, il se produit un endommagement de
la liaison, c'est-à-dire que la couche 12 de bioxyde de si-
licium (SiO2) au-dessous du plot en aluminium 5 est détrui-
te par la force intervenant au moment de la liaison du fil.
En d'autres termes, lorsque la microdureté Vickers au ni-
veau de la partie en forme de boule 6a du fil 6 dépasse 65, la pellicule de passivation 12 est détruite au moment de
l'établissement de la liaison.
La figure 5 est un diagramme montrant la relation entre le pourcentage d'apparition d'endommagements de la
liaison et la pureté du fil, selon lequel l'ordonnée repré-
sente le taux d'endommagements de la liaison,.c'est-à-dire
le pourcentage des fissures qui se développent dans la-pel-
licule isolante 12 lorsque la liaison est réalisée grâce à l'utilisation d'un outil de fixation ou de liaison 10 avec
une force d'une intensité de 80 grammes.
Les abscisses représentent la pureté du fil de cui-
vre, c'est-à-dire que'elles représentent le pourcentage en poids de cuivre dans le fil. Le terme "3N" (trois neufs) indique que le cuivre est présent en une quantité d'au moins 99,9 % en poids dans le fil, et que la microdureté Vickers
MHv de la partie formant boule est égale à environ 120.
Un fil de cuivre de 4N (quatre neufs) contient du cuivre
en une quantité égale à au moins 99,99 % en poids et pos-
sède une microdureté Vickers NHv égale à environ 90 dans la partie en forme de boule. Pour 5N (la valeur en cuivre est égale à 99,999 % en poids ou plus, la microdureté Vickers MHv est égale à environ à 65 et pour 6N (teneur en cuivre égale à 99,9999 % en poids ou plus), la microdureté Vickers est égale à environ 45. Le fil, qui est situé entre 6N et 7N (teneur en cuivre égale à 99,99999 % en poids ou plus) possède une microdureté Vickers MHv égale à environ 30. La
dureté du fil de cuivre dépend principalement de sa pureté.
Pour confiner le taux d'endommagemnts de la liai-
son à l'intérieur d'une gamme admissible comprise entre
environ 10 % ou moins, il faut que le fil de cuivre 6 pos-
sède une dureté supérieure à 99,999 % en poids (cinq neufs) ou bien possède une microdureté Vickers MHv inférieure à
dans la partie en forme de boule 6a. Le taux d'endomma-
gements de la liaison est très faible, en particulier lors-
que le fil de cuivre possède une microdureté Vickers MHv
inférieure à 50 dans la partie en forme de boule 6a.
Ici, la présente invention inclut des fils de
cuivre dont la pureté peut être considérée comme substan-
tiellement supérieure à 99,999 % en poids et des fils de cuivre dont la microdureté Vickers dans la partie en forme
de boule peut être considérée comme étant nettement infé-
rieure à 65.
Les fils de cuivre réalisés selon différentes méthodes de raffinage peuvent contenir différentoe ipuretés avec des rapports différents. C'est pourquoi même des fils de cuivre possédant la même pureté peuvent présenter des
degrés différents de dureté.
En outre, même si on utilise des fils de cuivre possédant la même dureté, le taux d'endommagements de la liaison peut varier en fonction des conditions de la liai- son.
Ces facteurs apparaissent sous la forme de la va-
riance dans le taux d'endommagements de la liaison sur la
figure 5.
En outre la microdureté Vickers varie en fonction
de la méthode de mesure. La méthode de mesure de la micro-
dureté Vickers a été spécifiée conformément à la norme in-
dustrielle japonaise Z2244, selon laquelle on comprime une
extrémité pointue d'un petit cristal de diamant sur un ma-
tériau devant être mesuré, moyennant l'application d'une force prédéterminée, et la microdureté Vickers est déterminée
par la mesure de la profondeur à laquelle la pointe du dia-
mant pénètre. Cependant la profondeur à laquelle l'extrémité
du diamant pénètre peut varier en fonction du fait que l'ex-
trémité du diamant rencontre un grain de cuivre ou bien ren-
contre l'interface entre grains du cuivre. C'est pourquoi
il peut arriver que la microdureté Vickers varie.
Dans la présente forme de réalisation, la microdu-
reté Vickers est mesurée conformément au procédé mentionné
précédemment, moyennant l'application d'une force de 5 gram-
mes et est exprimée sous la forme de 5g.f.
Le moyen le plus commode permettant d'obtenir une
microdureté Vickers MHv comprise entre 135 et 65 dans la par-
tie en forme de boule 6a du fil de cuivre 6 est d'accroltre la pureté du cuivre pour l'amener à 99,999 % en poids ou plus.
Des exemples du procédé le plus souhaitable per-
mettant d'obtenir des fils de cuivre ayant une pureté supé-
rieure à 99,999 % en poids incluent la méthode de raffinage
de zone et la méthode basée sur l'électrolyse.
TABLEAU 1
IMPURETES
Total Ag Fe Bi As Sb P Zn Pb Ni Sn Si Plaque de 7 6 1 1 <1 <0,5 <1 1 1 I 1 <21 cuivre Après élec- 4 3 1 <1 <1 <0,5 <1 1 1 1 1 <15 trolyse Après raffi- 3 2 <1 <1 <1 <0,5 <1 <1 <1 <1 1 <10 nage de zone Le tableau 1 illustre les procédés que les auteurs à la base de l'invention ont utilisé pour accroître la pureté
du fil de cuivre, et les résultats obtenus. Les chiffres indi-
qués dans le tableau 1 représentent les teneurs en impuretés en ppm (parties par million), le symbole <1 représentant la
teneur en impuretés inférieure à 1 ppm.
Tout d'abord on prépare une plaque de cuivre. La pla-
que de cuivre contient différentes impuretés représentées dans le tableau 1 en des quantités comprises entre environ 20 et
21 ppm.
On affine le cuivre par électrolyse en utilisant de l'acide sulfurique. On peut réaliser l'électrolyse une ou plusieurs fois. Il est nécessaire d'accrottre la pureté
de la solution d'acide sulfurique qui constitue l'électro-
lyse. Après l'électrolyse, les impuretés du cuivre, en par-
ticulier le fer (Fe), sont approximativement réduites-de moi-
tié. Après l'électrolyse, on soumet le lingot de cuivre au processus de raffinage de zone, qui est mis en oeuvre une ou plusieurs fois. Après le raffinage de zone, la teneur en impureté dans le cuivre diminue à une valeurinférieure à ppm. En particulier la teneur en nickel (Ni) diminue
pour prendre une valeur inférieure à 1 ppm-
Conformément à une étude effectuée par les auteurs à la base de la présente invention, la dureté du cuivre est
fortement affectée par le fer et le nickel parmi les impure-
tés mentionnés plus haut. La teneur en fer et en nickel peut être réduite au moyen de l'électrolyse et du raffinage de zone. En mettant en oeuvre à plusieurs reprises une
électrolyse et un raffinage de zone, il est possible d'ac-
croître la pureté du cuivre de telle sorte que la microdure-
té Vickers dans la partie en forme de boule devient égale à 35. Si le degré de dureté est trop faible, le fil
se déforme, ce qui n'est pas souhaitable.
Lorsque la microdureté Vickers est comprise entre 40 et 50, le nombre de mises en oeuvre de l'électrolyse et du raffinage de zone à effectuer est assez faible, ce qui permet de réduire le côut de fabrication. Pour obtenir un fil de cuivre-possédant une microdureté Vickers inférieure à 35, il faut effectuer l'électrolyse et le raffinage de
zone un grand nombre de fois; c'est pourquoi le fil de cui-
vre est très onéreux.
Pour fixer ou souder le fil de cuivre 6 tout d'a-
bord au plot de liaison de la pastille 3, on peut former une boule à l'extrémité du fil en utilisant un chalumeau à hydrogène ou analogue. On peut fixer le fil de cuivre simplement en utilisant la liaison per thermocompression
ou bien enapplicant en supplément une vibration ultrasoni-
que en plus de la liaison par thermocompression. Pour fixer en second lieu le fil de cuivre au fil 1, il n'est pas nécessaire de former une boule, mais on peut naturellement
former une boule sans qu'il ne se pose aucun problème.
Conformément à la présente invention, les effets
obtenus sont décrits ci-après.
Le fait d'utiliser un fil de cuivre possédant une microdlureté Vickers MHv comprise entre 35 et 25 <pour 5g.f) dans la partie en forme de boule, empêche la pellicule de passivation d'être détruite au moment de la liaison, et on obtient une liaison présentant une résistance suffisamment forte. La dureté mentionnée précédemment peut être aisément obtenue au moyen d'un accroissement de la teneur en cuivre dans le fil à une valeur de 99,999 % en poids ou plus. Il a
été confirmé par les auteurs à la base de la présente inven-
tion que la dureté du fil de cuivre augmente lorsqu'il
contient des impuretés.
On utilise un fil de cuivre possédant une micro-
dureté Vickers MHv comprise entre 35 et 65 (à 5f.g) dans
la partie en forme de boule, on obtient un dispositif à se-
miconducteurs possédant une bonne résistance à la corro-
sion. La corrosion d'un fil de cuivre est déclenchée
par les impuretés qu'il contient: plus le degré de pure-
té du cuivre est élevé, plus sa résistance à la corrosion est forte. Un fil de cuivre résiste plus à la corrosion que
ne le fait un fil d'aluminium.
En raffinant le fil au moyen d'un raffinage de zo-
ne ou d'une électrolyse, on obtient un fil de cuivre très
pur possédant une bonne forme en boucle, ce qui rend possi-
ble une amélioration conséquente de la résistance à la cor-
rosion. Compte-tenu des raisons mentionnées plus haut, il est possible de réaliser à bon marché un dispositif à
semiconducteurs hautement fiable.
Dans ce qui précède, on a décrit de façon con-
crète l'invention effectuée par les auteurs de la présen-
d
te invention, sur la base d'une forme de réalisation. Ce-
pendant il faut noter que la présente invention n'est en aucune manière limitée uniquement à la forme de réalisation
mentionnée précédemment, mais peut être modifiée selon tou-
te une variété de moyens sans sortir pour autant du cadre
de l'invention. La description précédente concerne princi-
paiement le cas o la présente invention est adaptée à
un dispositif à semiconducteurs du type moulé dans une ré-
sine, dans le domaine de la technique servant de base pour la présente invention. Cependant la présente invention n'est en aucune manière limitée uniquement à ce type de se-
miconducteurs et peut être adaptée à n'importe quel dispo-
sitif à semiconducteurs utilisant des fils, tels que des
dispositifs à semiconducteurs du type scellé de façon her-
métique.
11 2563380

Claims (4)

REVENDICATIONS
1 - Dispositif à semiconducteurs du type comportant un fil de liaison en cuivre -6) qui relie électriquement un conducteur (1) à un plot de liaison (5), qui est formé sur une pastille semiconductrice (3), caractérisé en ce
qu'une partie en forme de boule (6a) formée sur l'extré-
mité dudit fil de liaison (6) sur le côté dudit plot de liaison (5) possède une microdureté Vickers inférieure à 65.
2 - Dispositif à semiconducteurs selon la revendication 1, caractérisé en ce que ladite partie en
forme de boule (6a) possède une microdurete Vickers com-
prise entre 35 et 65.
3 - Dispositif à semiconducteurs selon la revendi-
cation 2, caractérisé en ce que ladite-partie en forme de boule possède une microdureté Vickers comprise entre
et 50.
4 - Dispositif à semiconducteurs selon la revendi-
cation 1, caractérisé en ce que ledit fil de liaison (6) contient du cuivre en une teneur supérieure à 99,999 %
en poids.
- Dispositif à semiconducteurs selon la revendica-
tion 1, caractérisé en ce que ladite pastille semiconduc-
trice (3), ledit fil de liaison (6) et une partie du conducteur (1) sont insérés par moulage dans une résine (8).
FR8501363A 1984-04-19 1985-01-31 Dispositif a semi-conducteurs. raccordement electrique des pastilles et des elements de cablage a un fil de cuivre Expired FR2563380B1 (fr)

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FR8509468A Withdrawn FR2563381A1 (fr) 1984-04-19 1985-06-21 Raccordement electrique des pastilles et des elements de cablage d'un dispositif a semi-conducteurs a un fil de cuivre

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JP (1) JPS60223149A (fr)
KR (1) KR930008979B1 (fr)
DE (1) DE3514253A1 (fr)
FR (2) FR2563380B1 (fr)
GB (1) GB2157607B (fr)
HK (2) HK40390A (fr)
IT (1) IT1184445B (fr)
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Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62111455A (ja) * 1985-11-08 1987-05-22 Mitsubishi Metal Corp 半導体装置のボンディングワイヤ用高純度銅極細線の製造法
JPS6294969A (ja) * 1985-10-22 1987-05-01 Mitsubishi Metal Corp 半導体装置用ボンデイングワイヤ
JPS61224443A (ja) * 1985-03-29 1986-10-06 Mitsubishi Metal Corp 半導体装置用ボンデイングワイヤ
JPH0736431B2 (ja) * 1985-06-28 1995-04-19 三菱マテリアル株式会社 半導体装置のボンディングワイヤ用高純度銅の製造法
JPS6222469A (ja) * 1985-07-22 1987-01-30 Mitsubishi Metal Corp 半導体装置用ボンデイングワイヤ
US4976393A (en) * 1986-12-26 1990-12-11 Hitachi, Ltd. Semiconductor device and production process thereof, as well as wire bonding device used therefor
JP4519775B2 (ja) 2004-01-29 2010-08-04 日鉱金属株式会社 超高純度銅及びその製造方法
DE102005011028A1 (de) 2005-03-08 2006-09-14 W.C. Heraeus Gmbh Kupferbonddraht mit verbesserten Bond- und Korrosionseigenschaften
EP2133915A1 (fr) * 2008-06-09 2009-12-16 Micronas GmbH Agencement semi-conducteur doté de conduites de liaison moulées de manière particulière et procédé de fabrication d'un tel agencement
US20110123389A1 (en) 2008-09-30 2011-05-26 Jx Nippon Mining & Metals Corporation High Purity Copper and Method of Producing High Purity Copper Based on Electrolysis
CN115966478A (zh) * 2021-10-11 2023-04-14 恩智浦美国有限公司 半导体器件和封装的方法

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR1536483A (fr) * 1967-07-17 1968-08-16 British Insulated Callenders Procédé de production d'éléments en cuivre ayant une résistance mécanique élevée et une conductivité élevée
US3421888A (en) * 1966-08-12 1969-01-14 Calumet & Hecla Corp Copper alloy
GB2093064A (en) * 1981-02-12 1982-08-25 Heraeus Gmbh W C External connectors or terminals
GB2146937A (en) * 1983-09-28 1985-05-01 Hitachi Ltd Semiconductor device and method of manufacturing the same

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3507033A (en) * 1965-01-06 1970-04-21 Western Electric Co Ultrasonic bonding method
DE1295844B (de) * 1965-03-30 1969-05-22 Nielsen Verwendung einer Kupferlegierung fuer Fahrdraehte
FR1524436A (fr) * 1966-04-14 1968-05-10 Philips Nv Dispositif semi-conducteur et circuit équipé d'un tel dispositif
DD133285A1 (de) * 1977-09-05 1978-12-20 Ruediger Uhlmann Bonden eines drahtes mit einer anschlussflaeche
DE2752655A1 (de) * 1977-09-23 1979-06-07 Blaupunkt Werke Gmbh Elektronisches bauelement
JPS56150830A (en) * 1980-04-25 1981-11-21 Hitachi Ltd Semiconductor device
NL184184C (nl) * 1981-03-20 1989-05-01 Philips Nv Werkwijze voor het aanbrengen van kontaktverhogingen op kontaktplaatsen van een electronische microketen.
JPS59155161A (ja) * 1983-02-23 1984-09-04 Daiichi Denko Kk 半導体素子のボンデイング用ワイヤ

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3421888A (en) * 1966-08-12 1969-01-14 Calumet & Hecla Corp Copper alloy
FR1536483A (fr) * 1967-07-17 1968-08-16 British Insulated Callenders Procédé de production d'éléments en cuivre ayant une résistance mécanique élevée et une conductivité élevée
GB2093064A (en) * 1981-02-12 1982-08-25 Heraeus Gmbh W C External connectors or terminals
GB2146937A (en) * 1983-09-28 1985-05-01 Hitachi Ltd Semiconductor device and method of manufacturing the same

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MY102548A (en) 1992-07-31
KR850008244A (ko) 1985-12-13
IT1184445B (it) 1987-10-28
JPS60223149A (ja) 1985-11-07
GB8503143D0 (en) 1985-03-13
GB2157607A (en) 1985-10-30
GB2157607B (en) 1988-09-28
FR2563381A1 (fr) 1985-10-25
IT8520336A0 (it) 1985-04-15
HK40190A (en) 1990-06-01
DE3514253A1 (de) 1985-10-31
FR2563380B1 (fr) 1987-02-27
HK40390A (en) 1990-06-01
KR930008979B1 (ko) 1993-09-17

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