KR910003574B1 - 내식성 알루미늄 전자재료 - Google Patents

내식성 알루미늄 전자재료 Download PDF

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Publication number
KR910003574B1
KR910003574B1 KR1019830003637A KR830003637A KR910003574B1 KR 910003574 B1 KR910003574 B1 KR 910003574B1 KR 1019830003637 A KR1019830003637 A KR 1019830003637A KR 830003637 A KR830003637 A KR 830003637A KR 910003574 B1 KR910003574 B1 KR 910003574B1
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South Korea
Prior art keywords
alloy
wire
bonding
ball
film
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KR1019830003637A
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English (en)
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KR840005749A (ko
Inventor
진 오오누끼
마사데루 스와
마사히로 고이즈미
오사무 아사이
가쓰미 스즈끼
료오 히라가
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가부시기가이샤 히다찌 세이사꾸쇼
미다 가쓰시게
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Publication of KR840005749A publication Critical patent/KR840005749A/ko
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    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C21/00—Alloys based on aluminium
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    • H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
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Abstract

내용 없음.

Description

내식성 알루미늄 전자재료
제 1 도는 본원 발명의 Al합금의 현미경사진.
제 2 도는 분극곡선을 나타낸 선도.
제 3 도는 년간부식량과 첨가원소의 함유량과의 관계를 나타낸 선도.
제 4 도는 대표적인 레진모울드형 반도체장치의 단면도.
제 5 도는 아크방전에 볼형성장치의 볼형성 부분 단면도.
제 6 도는 볼본딩된 상황을 나타낸 반도체장치의 부분 단면도.
제 7 도는 PCT시험의 불량률을 나타낸 선도.
제 8 도는 접합파단결과 변형과의 관계를 나타낸 선도.
* 도면의 주요부분에 대한 부호의 설명
(1):와이어, (2):모세관,
(3):Si소자, (4):리드프레임,
(5):W전극, (6):땜납,
(7):볼, (8):AL증착막,
(9):저융점유리, (10):Ag도금층,
(11):W전극의 이동방향, (12):수지.
본원 발명은 신규의 알루미늄합금으로 이루어진 전자(電子)재료 및 그것을 사용한 반도체장치에 관한 것
종래, 반도체소자상에 형성된 Al증착막으로 이루어진 배선막과 외부리드와의 접속은 세선(細線)이 사용되고, 그 볼본딩법에 의한 열압착에 의해서 행해지고 있다. 근래, Au선 대신에 염가의 Al세선을 사용하는 검토가 행해지고 있다. 그러나, 에폭시수지 등의 합성수지에 의해서 봉지되는 반도체장치에서는 Al세선이나 Al증착막에 부식이 생기는 것이 문제로 되어 있었다. 즉, 합성수지와 Al세선 및 Al증착막과의 계면을 통해서 수분이 침입하기 때문에, 합성수지중에 포함되는 염소이온이나 아민이 유리(遊리)되고, 이들이 Al세선 및 Al증착막의 부식을 촉진하는 것으로 생각된다.
개량된 Al세선으로서, Cu 3-5중량%를 함유하는 Al-Cu 합금이 일본국 특개소 56(1981)-16647호 공보에서 알려져 있지만, Al에 대한 Cu의 첨가에 의해서도 합성수지에 대한 내식성(耐食性)의 향상은 얻어지지 않는다.
또, 개량된 Al증착막으로서, Mn 0.05-6중량%를 포함하는 Al합금이 일본국 특개소 51(1976)-142988호 공보에 알려져 있지만, Mn을 첨가한 Al증착막에서는 Mn은 Al보다 비교적 활성인 금속이기 때문에 표면이 두꺼운 산화막으로 덮여, Al와이어와의 접합성이 나빠진다고 하는 문제가 있다.
본원 발명의 목적은 접합성을 낮추지 않고 내식성이 더욱 뛰어난 알루미늄 배선막 재료를 제공하는데 있다. 또한, 본원 발명의 목적은 수지에 대한 내식성이 더욱 뛰어난 Al합금을 사용한 전자장치를 제공하는데 있다.
본원 발명은 백금, 파라듐, 로듐, 이리듐, 오스뮴, 루테늄, 금, 음의 1종 이상으로 이루어지는 귀금속 0.05-3중량%를 함유하고, 잔부가 실질적으로 알루미늄인 합금으로 이루어지는 것을 특징으로 하는 내식성 알루미늄 배선막 재료를 제공한다.
알루미늄은 대기중에서는 안정된 부동태피막(不動態皮膜)이 형성되기 쉽고, 일반적으로는 내식성이 양호한 금속이다. 그러나, Al은 수지로 패키지 되어 있는 전자장치와 같이 수지에 접촉하고 있을 경우에는 수지중에 포함된 염소이온이나 아민에 의해 부동태피막이 파괴되어 부식된다. 그래서, 본원 발명자들은 Al의 부식원인에 대해서 검토한 결과, Al에 Al보다도 수소과전압(過電壓)이 매우 작은 귀금속을 함유시킴으로써 부식을 방지할 수 있는 것을 발견했다. Al보다 수소과전압이 매우 작은 귀금속과 Al과의 합금은 최초 Al이 용해되었다고 하더라도, 수소과전압이 작은 귀금속이 전기 화학적으로 귀하기 때문에 표면부에 농축된다. 따라서, 합금의 용해가 진행됨에 따라 합금자체의 수소과전압이 점차 작아지고, 합금의 전위가 귀하게 되므로 합금 자체의 부동태화가 일어나는 것으로 생각된다. 본원 발명의 Al합금은 그 자체 산화피막을 형성하기 어려운 귀금속을 포함하고, 접합성은 산화피막의 두께로 정해지며, 본원 발명의 Al합금에 있어서도 산화피막두께는 변화하지 않으므로 고체상 접합에 있어서의 접합성이 Al의 그것과 같은 정도의 것이 얻어진다.
전자재료란 반도체소자에 전기적으로 접속되는 부재 예를 들면 배선이나 배선막을 나타낸다.
(1) 귀금속
Al보다 수소과전압이 매우 작은 귀금속으로, 백금(Pt), 파라듐(Pd), 로듐(Rh), 이리듐(Ir), 오스뮴(Os), 루테늄(Ru), 금(Au) 및 은(Ag)이 있으며, 이들의 1종 이상을 포함할 수 있다. 이들 귀금속은 그밖의 금속에 비해서, 수소과전압이 매우 작고, 그 자체가 매우 뛰어난 내식성을 가지므로 Al합금표면에의 부동태피막의 형성이 촉진되며, 내식성을 현저하게 향상시킨다. 특히, Pd,Au,Ag가 뛰어나며, Pd가 가장 좋다.
2규정의 황산용액중에 있어서의 수소과전압이 작은 순으로 열거하면 다음과 같다. Pd,Pt,Ru,Os,Ir,Rh,Au,Ag,Ni,W,Mo,Fe,Cr,Cu,Si,Ti,Al,Mn.
(2) 함유량
Al보다 수소과전압이 작은 귀금속의 함유량은 초정 Al을 갖는 공정점 이하가 아니면 안된다. 공정점 이상이면 수소과전압이 작은 귀금속과 Al과의 화합물이 초정으로서 정출(晶出)되어 조대(粗大)한 것으로 되어, 화합물이 조대하므로 그후의 소성가공(塑性加工)에서는 정출물(晶出物)은 잘게 되기 어렵다. Al소재는 연하므로 단단한 금속은 소성가공으로 분단되기 어렵기 때문이다. 그래서, 수소과전압이 작은 귀금속은 초정 Al을 포함하는 공정점 이하이면 공정(共晶)으로서 잘게 정출되고, 소성가공성이 높은 것이 얻어지며, 또한 고체상 접합에 있어서의 높은 접합성이 얻어진다.
특히, 소성가공성 및 접합성이 높은 것을 얻는데는 1종 또는 2종 이상의 총량으로 0.01-10중량%가 바람직하며, 또한 잔부(殘部)가 실질적으로 알루미늄으로 이루어지며, 더욱 높은 내식성, 소성 가공성 및 고체상으로 접합하는 볼본딩용 와이어 및 배선막에 대한 높은 접합성을 갖는 Al합금을 얻는데는 1종 또는 2종이상의 총량으로 0.05-3중량%가 바람직하다. 각 2원합금의 공정점은 중량으로 Pd 25%, Pt 9.0%, Au 5.0%, Ag 70.5%이다.
또한, 본원 발명은 귀금속과 마찬가지로 소량의 Si를 포함한다. Si함유량은 0.5-4중량%가 바람직하다. Si를 포함하는 경우라도 귀금속의 함유량은 상기한 바와 같다
(3) 합성수지
본원 발명의 Al합금은 합성수지에 접촉하여 사용되는 것에 매우 적합하다. 합성수지는 대기중의 수분과 반응하여 염소이온, 아민 등의 부식성 물질을 유리시키고, 금속을 부식시킨다. 본원 발명의 Al합금은 합성수지로 봉지되는 레진모울드형 반도체장치의 볼본딩용 와이어 및 배선막에 접합하다.
이 종류의 반도체장치에는 에폭시수지, 페놀수지, 멜라민수지, 요소수지, 디아릴프탈레이트수지, 불포화폴리에스테르수지, 우레탄수지, 부가형 폴리이미드수지, 불포화 폴리에스테르수지, 우레탄수지, 부가형 폴리이미드수지, 실리콘수지, 폴리파라비닐페놀수지 등의 열경화성수지, 불소수지, 폴리페닐렌술피드,폴리에틸렌, 폴리스티렌, 폴리아미드, 폴리에테르, 폴리에스테르, 폴리아미드에테르 폴리아미드 에스테르 등의 열가소성수지가 사용된다. 반도체장치용 봉지재료로서는 에폭시수지가 특히 바람직하다.
(4) 볼본딩용 와이어
본원 발명의 Al합금으로 이루어진 극세선은 그 선단에 볼을 형성하고, 그 볼을 반도체소자상에 형성된 배선막에 고체성 접합하고, 타단을 외부리드단자에 고체상 접합하는 볼본딩용 와이어에 유효하다.
극세선은 직경 10-100μm이 바람직하다. 합금중의 금속간 화합물은 최대가 직경 1μ/m 이하의 것이 바람직하며, 특히 서브미크론으로 되도록 하는 것이 바람직하다. 이와 같은 극세선에 있어서는 금속간 화합물이 큰 덩어리로 존재하면 같은 첨가량이라도 내식성의 향상에 대한 효과가 작다.
서브미크론의 미세한 금속간 화합물을 형성시키는데는 용해 후의 소성가공에 의해서 할 수 있지만, 특히 그 화합물의 크기는 용해후의 용탕의 냉각속도에 의해 큰 영향을 받고, 용탕으로부터의 급냉에 의해서 화합물의 조대화가 억제되므로 미세한 금속간 화합물로 할 수 있다. 용탕에서 응고까지의 냉각속도는 20℃/초 이상이 바람직하다. 또한, 50℃/초 이상이 특히 바람직하다. 냉각수단은 수냉 동주형(銅鑄型)을 사용하는 방법, 용탕을 수냉주형으로 응고하고, 그 직후 수냉하여 연속주조하는 방법 등에 의해서 행할 수 있다. 와이어의 굵기는 첨가하는 합금원소의 종류에 의해서 다르지만, 특히 직경 20-70μm이 바람직하다. 이중에서 특히 비저항(比抵抗) 등을 고려하여 와이어경이 선정된다.
와이어는 상기한 바와 같이 합금원소를 포함하므로, 잔류응력을 제거하기 위해 어니일링된 것이 바람직하다. 어니일링온도는 재결정온도 이상인 것이 비람직하며, 특히 탄성변형되지 않을 정도로 어니일링하는 것이 바람직하다. 와이어는 국부적으로 경도(硬度)가 다르면 본딩에 있어서 국부적인 변형이 생기므로, 불형성에 있어서 국부적인 가열을 받아 국부적인 연화가 생기지 않도록 전체적으로 같은 경도를 갖도록 연화되어 있는 것이 바람직하다. 어니일링온도는 150-160℃가 바람직하다. 어니일링은 비산화성 분위기중 예를들면 알곤, 질소, 수소 등의 가스중에서 하는 것이 바람직하다. 최종 어니일링은 150-300℃가 바람직하다.
와이어는 가공한 채의 것을 회로소자에 접합할때에 어니일링할 수 있지만 미리 어니일링된 것을 본딩하는 편이 훨씬 능률적이다.
와이어는 실온의 저항비가 15μΩ·cm 이하의 것이 바람직하다.
(5)볼형성
볼본딩에 있어서의 볼은 볼의 형성 및 본딩에 사용하는 모세관에 지지된 와이어선단을 방전, 수소화염, 프라즈마, 아크, 레이저빔 등의 가열수단에 의해서 용융하고, 스스로의 표면장력에 의해서 형성된다.
특히, 와이어 자체와 다른 전극과의 사이에 진공 또는 불활성가스 분위기중에서 아크방전 또는 불꽃방전을 일으키게 하는 방법으로 단시간에 볼이 형성되며, 산화막의 형성을 방지할 수 있으므로 바람직하다. 이 아크방전 또는 불꽃방전은 와이어를 마이너스로 하여 행함으로써, 그 표면에 산화막이 없는 청정한 볼이 생기며, 또한 편심이 없는 볼이 형성된다. 또 아크방전 또는 불꽃방전에 있어서 플러스 및 마이너스의 최소한 한쪽의 펄스전류를 흐르게 할 수도 있고, 이 펄스전류에 의해서 볼형성에 필요한 적정한 아크 또는 불꽃발생시간을 조정할 수 있다. 플러스, 마이너스의 전류를 흐르게 할 경우에는 와이어표면의 클리닝에 필요한 시간과 볼형성에 필요한 시간을 플러스, 마이너스의 시간비를 바꾸는 것에 의해서 조정할 수 있다. 클리닝에 필요한 시간은 전체 방전시간의 10-30%가 바람직하다.
볼 형성에 있어서의 가열용융분위기는 비산화성 분위기가 바람직하다. 특히, 불활성가스중에 소량 바람직하게는 5-15체적%의 환원성 가스(예를들면 수소가스)를 포함하는 것이 바람직하다. 특히, 수소가스를 5-15체적%포함하는 알곤, 헬륨 등의 불활성가스가 바람직하다.
볼경은 와이어경의 1.5-4배가 바람직하며, 특히 2.5-3.5배가 바람직하다.
(6) 본딩
본딩에는 볼본딩 및 웨지본딩이 있고, 초음파접합 또는 열압착에 의해서 행해지지만, 회로소자가 반도체 소자인 경우는 접합간격에 제한이 있으므로, 볼본딩이 바람직하며, 외부단자의 경우는 고능률의 웨지본딩이 바람직하다.
회로소자에 접합 후의 와이어는 모세관에 유지된 형태로 인장됨으로써 회로소자의 접합부 근방에서 절단된다.
와이어는 상기한 바와 같이 세경이므로, 이것을 보호하기 위해 반도체소자와 와이어와 외부단자의 일부를 수지 외에 세라믹스로 덮는 일이 행해진다. 수지는 액체를 주형(캐스팅)또는 성형 (모울딩)하여 경화시키며, 세라믹스는 통상의 방법으로 캡 시일 접합된다.
(7) 배선막
본원 발명의 Al합금으로 이루어진 박막은 반도체소자의 외부리드에의 접속단자로하는 배선막에 특히 유효하다. 박막의 형성에는 증착, 스패터링 등의 종래방법이 사용된다. 배선막은 폭이 약수 내지 수십μm, 두께가 수μm를 갖는다.
[실시예 1]
순도 99.99%의 순 Al 및 순도99.9%의 Pd를 사용하여, Pd함유량 0, 0.01, 0.1, 0.5, 1, 5, 7, 10중량%의 Al합금을 수냉동주형을 사용하여, Ar분위기중에서 아크용해에 의해서 용해하여 3cm×3cm, 두께 5mm의 블록을 제조했다.
이때의 용탕에서 응고까지의 냉각속도는 약 50℃/초 이상이었다. 이어서, 합금중의 Pd를 합금중에 균일하게 고용(固溶)시키기 위해, 550℃에서 24시간 가열하는 소킹처리 이른바 균일화 처리를 한 후 급냉하고, 580℃에서 2시간 가열하는 어니일링을 사이에 넣어서 실온에서 압연 또는 스웨이징에 의해 두께 1mm의 판 및 직경 1mm의 선을 각각 제조했다. 가공 후, 모드 200℃에서 최종 어니일링을 했다. 그리고, 7% 및 10%의 Pd를 포함하는 Al합금은 상기한 압연 및 스웨이징 가공이 Pd량의 더욱 적은 것에 비해 곤란했다. 5%이하의 Pd를 포함하는 Al합금의 가공성은 모두 순 Al보다도 약간 뒤질 정도이며, 용이하게 가공할 수 있다.
제 1 도는 Al-1% Pd합금의 배율 20,000의 현미경사진이다. 조직중의 흰부분이 Al-Pd금속 화합물이며, 그 크기는 큰 것이 직경 약1μm 작은 것이 직경 약 0.2μm이며, 매우 미세하고, 매트릭스(基地)중에 균일하게 분산되어 있음을 알 수 있다.
제 2 도는 100ppm의 염소이온을 포함하는 pH 3의 황산용액(20℃)중에서 측정한 Al-1% Pd합금과 순 Al의 분극곡선이다. 순 Al은 전압이 높아질수록 전류밀도가 증대하여 부식량이 증대하는 것에 대해, 본원 발명의 Al-1% Pd합금은 전압이 증가해도 전류밀도가 증대되지 않고 반대로 감소하는 영역 즉 부동태영역(사선부분)이 존재하는 것을 알 수 있다. 이 영역은 합금표면에 부동태피막이 형성되는 것을 뜻한다.
마찬가지로, 0.01, 0.1, 0.5, 5, 7 및 10%의 Pd를 포함하는 합금의 경우도 부동태영역이 존재하는 것을 볼 수 있으며,또한 Pd량이 많을수록 부동태영역이 확대된다는 것을 알았다.
제 2 도에 나타낸 분극곡선에서 계산한 부식속도는 순 Al(99.99% 이상)이 약 0.010mm/년, 및 1% Pd합금이 0.001mm/년이며, 본원 발명 합금의 부식속도는 순 Al의 10분의 1로 부식량이 매우 작은 것을 알 수 있다.
상기한 바와 같이 중량으로 1% Si 1% Mn 및 1% Mg를 포함하는 Al합금 및 Au,Ag 및 Pd 0.1-6중량%를 포함하는 Al합금의 판을 제조하고, 이들 합금에 대해서도 분극곡선을 구했다. 그 곡선으로부터 년간부식량을 구한 결과, 각각 Si에서는 0.009mm/년 Mn에서는 0.0085mm/년 및 Mg에서는 0.007mm/년인데 대해 Au,Ag 및 Pd가 5% 이하에서는 모드 0.001mm/년이었다. 분극곡선은 면적 1cm를 갖는 시료를 염소이온 100ppm을 포함하는 pH 3의 황산용액중(25℃)에서 측정한 것이다.
제 3 도는 년간부식량과 첨가원소의 함유량과의 관계를 나타낸 그래프이다.
[실시예 2]
모두 중량으로 1%의 Si,Mn,Pt,Rh,Ru 및 Os, 2% Mg, 0.5-6% Au,Ag 및 Pd를 포함하는 합금을 실시예1과 같이 아크용해하고 ,실시예1과 같이 하여 스웨이징 가공 후 와이어드로잉 어니일링을 반복함으로써 직경 50μm의 와이어를 제조했다. 합금원소로서 모두 99.9% 이상의 순도를 갖는 것을 사용했다.
No. 3-9는 본원 발명의 합금이고, No. 2의 Al-1% Si합금은 비교를 위한 것이다.
제1표는 각 와이어에 대해서 85℃ 및 습도 90%의 분위기 중에서 1000시간 유지에 의한 고온다습 시험후의 인장시험에 의한 신장율 및 그 시험전의 신장율을 나타낸 것이다.
[표 1]
Figure kpo00001
표에 나타낸 것처럼 본원 발명의 No. 3-8의 Al합금의 순 Al 및 1% Si 합금에 비해 시험후의 신장율이 모두 높은 것을 알 수 있다.
마찬가지로 Pt,Pd,Rh,RuOs 및 Au의 함유량을 각각 0.1, 0.5, 5%로 한 Al합금으로 이루어진 직경 50μm의 와이어 대해서 시험한 결과, 모든 1%함유 Al합금과 같은 정도의 신장율이었다. 이 결과에서, 본원 발명의 와이어는 부식량이 적은 것을 알 수 있다.
제2표는 각 와이어에 대해서 120℃, 2기압의 수증기중에서 100시간 노출시킨 다음의 강도와 신장율과의 관계를 나타낸 것이다. 이들 강도 및 신장율은 시험전을 100%로 했을 때의 비율로 나타낸 것이다.
그 결과 Al-1Si, Al, Al-1Mn, Al-2Mg는 100시간 방치하는 PCT시험에서 강도, 신장이 모두 0으로 되는 것, Al에 6%의 Pd,Au,Ag를 첨가한 와이어 및 Si를 5% 첨가한 와이어에서는 신장고 강도가 상당히 낮아진다는 것을 알 수 있다. 그러나, 그 이외의 것에서는 거의 강도, 신장이 모두 거의 저하하지 않는 것도 알 수 있다. 여기서, PCT 시험이란 120℃, 2기압의 포화수증기중에 있어서의 부식시험을 말한다.
[표 2]
Figure kpo00002
[실시예 3]
제 4 도는 실시예2 에서 제작한 직경50μm의 순 Al, Al-1% Si 및 Al-1% Pd합금으로 이루어진 와이어를 사용한 대표적인 레진모울드형 반도체장치의 단면도이다. 이 레진모울드형 반도체장치를 각 와이에 대해서 50개 제작했다. 각 와이어는 볼형성전에 모드 200-300℃에서 최종 어니일링 된 불완전 어니일링 된 것을 사용했다.
각 와이어(1)는 Al증착막(8)이 배설된 반도체소자(3)에 볼본딩되며, Ag도금층(10)이 배설된 리드프레임(4)에 웨지본딩된다. 볼본딩된 다음, SiO2등의 보호피막(13)이 배설되고, 그후 형을 사용하여 액체상의 에폭시수지를 주입하고, 수지(12)를 형성하고, 경화시킴으로써 도면의 반도체장치가 형성된다. 리드프레임에는 Cu 또는 Fe-42% Ni합금이 사용된다.
본딩을 위한 볼(7)의 형성은 제5도에 나타낸 것처럼 모세관(2)에 Al와이어를 밀어내어, 불꽃방전에 의한 방법에 의해 행해진다.
상기한 각 Al와이어를, 실드캡내를 진공배기한 다음, 7%(체적)의 수소를 포함하는 Ar가스분위기로 치환된 분위기중에서, 1000V, 1-5A의 방전조건으로 와이어(1)와 전극(5)과의 사이에 1미리초 이하의 단시간방전을 시켜서, 그 선단에 원형의 볼을 형성시켰다. 방전은 W로 이루어진 전극(5)과 와이어와의 사이에서 행해진다. 방전으로 얻어진 볼을 제 5 도에 나타낸 것처럼 모세관(2)에 의해서 반도체소자상에 형성된 Al증착막(8)에 와이어와 증착막과의 마찰에 의해서 행하는 초음파접합에 의해서 볼본딩을 하고, 이어서 타단을 역시 모세관(2)에 의해 리드프레임(4)의 Ag도금층에 역시 초음파 접합에 의해서 웨지본딩을 했다. 이 초음파접합에 의한 본원 발명 합금의 접합성은 순 Al와이어와 같응 정도이며 뛰어났다.
이 방법에 의해서 얻어진 본원 발명 합금으로 이루어진 볼은 약간 와이어축방향으로 길다란 계란형의 것이 형성되었지만, 양호한 진구(眞球)에 가까운 것이었다. 본원 발명합금의 볼은 표면에 광택이 있고, 또한 매우 매끄러우며, 와이어 자체의 경도와 거의 같고, 제6도에 나타낸 바와 같이 깨끗한 루프형의 본딩이 얻어지는 것이 확인되었다. 여기서, 부호(6)은 반도체소자(3)와 리드프레임(4)을 접합하는 본딩재료이다. 또, 웨지본딩 후의 와이어의 절단은 모세관을 들어 올려서 인장하는 것에 의해 행해지지만, 그 절단도 와이어가 연하기 때문에 매우 용이하며, 또한 그 인장에 의해서 본딩 부분이 박리되는 일도 전혀 일어나지 않았다.
이상과 같이 해서 제작한 각 50개의 레진모울드형 반도체장치를 120℃, 2기압의 수증기중에 160시간 방치하는 프레서쿠커테스트(PCT) 시험하고, 리드선의 부식단선, 소자의 오동작 등에 의한 불량율을 측정했다. 그 결과를 제7도에 나타낸다. 제7도에 순 Al 및 Al-1% Si합금으로 이루어진 것은 모든 5-10%의 불량율이 생긴데 대해, 본원 발명의 Al-1% Pd합금으로 이루어진 것은 0.2% 정도의 불량율이며, 내식성이 현저하게 뛰어났다.
실시예1에서 나타낸 방법과 같이 하여, 직경 30μm의 99.99중량%의 순 Al, 순도 99.9%의 Si,Pd,Au를 사용하여, 중량으로 Al-1% Si, Al-1% Pd-1% Si, Al-1% Au-1% Si, Al-2% Pd, Al-2% Au합금으로 이루어진 세선(細線)을 제조했다. 이들 세선은 상기한 바와 마찬가지로 어니일링하여 1000V, 3A의 단락방전(短絡放電)에 의해서 직경 약 80μm볼을 형성했다.
이와 같이 해서 얻어진 볼을 Si상의 알루미늄 패드에 압착하여 초음파를 인가해서 접합하고, 접합강도를 조사했다.
제 8 도는 접합파단력과 변형(2ln D/Do, Do:볼경, D:접합후의 볼경)과의 관계를 나타낸 선도이다. 도면에 나타낸 바와 같이 어느 와이어의 경우도 접합강도는 변형과 함께 증가해간다. Al-1Pd-1Si,Al-1Au-1Si, Al-2Pd, Al-2Au와이어에서는 Au와이어에 가까운 접합강도를 가지고 있지만, Al-1Si, Al와이어에서는 접합강도가 꽤 낮은 것을 알 수 있다.
[실시예 4]
실시예3의 제4도에서 나타낸 Al증착막(8) 대신에, 실시예1에서 제조한 두께1mm의 Al-1% Pd합금 및 실시예 3에서 나타낸 Al-1% Si합금의 두께 1mm의 판을 각각 증착원으로서 사용하고, 두께 1μm의 증착막을 Si 반도체소자상에 형성하여 실시예 2와 같은 PCT 시험을 500시간 행하였다. 증착조건은 모두 기판온도 200℃, 진공도 2-20×10-6Torr, 증착속도 200Å/초이다. 시험 후, 주사형 전자현미경에 의해 증착막의 표면상태를 조사한 결과, Al-1% Si합금은 입계(粒界)에서 우선적으로 부식이 진행하고 있었던 것에 대해, 본원 발명의 Al-1% Pd 합금은 거의 부식되어 있지 않았다. 그리고, 증착막의 조성은 대략 합금조성과 같았다.
상기한 바와 같이 진공증착에 의해 Al/Pd/Al, Al/Al/Al 및 Al/Ag/Al의 3층막을 열산화된 SiO2막상에 제작하여, 가열(고순도 99.9999% N2중)에 의해 두께 1μm의 합금막을 제작했다. 여기서, Pd,Au,Ag의 조성은 막두께를 콘트롤함으로써 변화시켰다. Pd,Au,Ag를 각기 0, 0.5, 1, 2, 4, 6중량% 함유하는 Al합금막을 수지봉지된 반도체소자에서 잘 사용되는 120℃, 2기압, 수증기중에 50, 100, 200시간 방치하여, 막의 상황을 관찰했다.
그 결과, 순 Al에서는 50시간에서 이미 막의 부식이 관찰된데 대해, Pd,Au,Ag를 6% 포함하는 합금막에서는 100시간에서 부식이 관찰된 이외는 200시간에서도 거의 부식되고 있지 않음을 알 수 있었다.
다음에, 제 3 의 원소인 Si를 상기 Al-Pd, Al-Au, Al-Ag막에 0.5, 1, 2, 3, 4, 5중량% 첨가한 막을 제작하여 같은 시험을 했다. 그 결과, Si를 5중량% 포함할 경우에는 100시간에서 부식이 관찰된 이외는 모두 200시간 경과후도 거의 부식은 볼 수 없었다.
제 3 표는 각 합금막의 PCT에 의한 부식상황을 나타낸 것이다.
○표에서는 부식이 관찰되지 않는 것 및 ×는 부식이 관찰된 것을 나타낸다.
[표 3]
Figure kpo00003
[실시예 5]
실시예3의 제 4 도에서 나타낸 Al 증착막 대신에 실시예4에 나타낸 것과 마찬가지로 1μm의 두께의 Al-1% Pd증착막을 형성하는 동시에, 제4도의 와이어(1)로서 실시예2에서 얻은 직경 50μm의 Al-1% Pd 합금선을 사용하고, 실시예 3에 나타낸 것과 마찬가지로 볼본딩 및 웨지본딩을 하고, 다시 실시예 3과 마찬가지로 에폭시수지로 봉지한 레진모울드형 반도체장치를 50개 제작하여, 그 PCT 시험을160시간 실시했다. 그 결과, 불량으로 된 것은 전혀 없고, 매우 뛰어난 내식성을 갖는다는 것을 알았다.

Claims (2)

  1. 백금, 파라듐, 로듐, 이리듐, 오스뮴, 루테늄, 금, 은의 1종 이상으로 이루어지는 귀금속 0.05-3중량%를 함유하고, 잔부가 실질적으로 알루미늄인 합금으로 이루어지는 것을 특징으로 하는 내식성 알루미늄 배선막 재료.
  2. 회로소자와 이 회로소자 사이를 접합하는 배선막을 가지는 전자장치에 있어서, 상기 배선막이 백금, 파라듐, 로듐, 이리듐, 오스뮴, 루테늄, 금, 은의 1종 이상으로 이루어지는 귀금속 0.05-3중량%를 함유하고, 잔부가 실질적으로 알루미늄인 합금으로 이루어지는 것을 특징으로 하는 전자장치.
KR1019830003637A 1982-08-11 1983-08-03 내식성 알루미늄 전자재료 KR910003574B1 (ko)

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JP82-138608 1982-08-11
JP138608 1982-08-11
JP57138608A JPS5928553A (ja) 1982-08-11 1982-08-11 耐食性アルミニウム配線材料

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JPS5928553A (ja) 1984-02-15
JPH0365424B2 (ko) 1991-10-11
CA1223138A (en) 1987-06-23
EP0101299A1 (en) 1984-02-22
US4912544A (en) 1990-03-27
EP0101299B1 (en) 1986-10-22
KR840005749A (ko) 1984-11-16
DE3367137D1 (en) 1986-11-27

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