KR840005749A - 내식성(耐蝕性)알루미늄 전자재료(電子材料) - Google Patents

내식성(耐蝕性)알루미늄 전자재료(電子材料) Download PDF

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Publication number
KR840005749A
KR840005749A KR1019830003637A KR830003637A KR840005749A KR 840005749 A KR840005749 A KR 840005749A KR 1019830003637 A KR1019830003637 A KR 1019830003637A KR 830003637 A KR830003637 A KR 830003637A KR 840005749 A KR840005749 A KR 840005749A
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South Korea
Prior art keywords
aluminum
noble metal
corrosion
electronic material
thin
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KR1019830003637A
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English (en)
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KR910003574B1 (ko
Inventor
진 오오누끼 (외 5)
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미다 가쓰시게
가부시기가이샤 히다찌세이사꾸쇼
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Publication of KR840005749A publication Critical patent/KR840005749A/ko
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Publication of KR910003574B1 publication Critical patent/KR910003574B1/ko

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    • CCHEMISTRY; METALLURGY
    • C22METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22CALLOYS
    • C22C21/00Alloys based on aluminium
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    • H01L23/31Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H01L23/3107Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
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    • H01L23/3107Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
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Abstract

내용 없음

Description

내식성(耐蝕性)알루미늄 전자재료(電子材料)
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 본원 발명의 A1 합금의 현미경 사진.
제2도는 분극곡선을 나타낸선도.
제3도는 연간부식량과 첨가원소의 함유량과의 관계를 나타낸 선도.

Claims (13)

  1. 알루미늄을 주성분으로 하고, 이것에 소량의 귀금속을 포함하는 합금으로 이루어지며, 상기 귀금속의 함유량이 초정알루미늄을 갖는 공정점 이하인 것을 특징으로 하는 내식성알루미늄 전자재료.
  2. 상기 귀금속은 백금, 파라듐, 로듐, 이러듐, 오스뮴, 루테늄, 금, 은의 1종이상으로 이루어지며, 상기 알루미늄량이 90중량% 이상인 것을 특징으로 하는 특허청구의 범위 1기재의 내식성 알루미늄전자재료.
  3. 상기 귀금속의 함유량이 0.01∼10중량%이며, 잔부가 실질적으로 알루미늄인 특허청구의 범위 2기재의 내식성 알루미늄전자재료.
  4. 상기 귀금속의 함유량이 0.05∼3중량%이며, 잔부가 실질적으로 알루미늄인 특허청구의 범위 2기재의 내식성 알루미늄전자재료.
  5. 알루미늄을 주성분으로하고, 이것에 소량의 귀금속 및 실리콘을 포함하며, 상기 귀금속 및 실리콘의 함유량은 초정알루미늄을 갖는 공정점이하이고, 상기 알루미늄량이 중량으로 90% 이상인 것을 특징으로 하는 내식성알루미늄 전자재료.
  6. 알루미늄을 주성분으로하고, 이것에 소량의 귀금속을 포함하는 합금으로 이루어지며, 이 귀금속의 함유량이 초정알루미늄을 갖는 공정조성이하고, 상기 알루미늄합금은 세선이며, 이 세선은 그 선단에 이세선에 의해서 형성된 보슬을 반도체소자상에 형성된 배선막에 접합하고, 상기 세선의 타단을 외부리이드 단자에 접합하는 보슬본딩용 와이어임을 특징으로 하는 내식성알루미늄전자재료.
  7. 알루미늄을 주성분으로하고, 이것에 소량의 귀금속을 포함하는 합금으로 이루어지며, 이 귀금속의 함유량이 초청알루미늄을 갖는 공정조성이 하이고, 상기 알루미늄합금은 박막으로 이루어진 배선막이며, 이 배선막은 반도체소자의 외부리이드에의 접속단자임을 특징으로 하는 내식성 알루미늄 전자재료.
  8. 알미루늄을 주성분으로하고, 이것에 소량의 귀금속 및 실리콘을 포함하며, 상기 귀금속 및 실리콘의 함유량은 초정알미루늄을 갖는 공정조성이하이고, 상기 합금은 박막으로 이루어진 배선막으로서, 이 배선막은 반도체소자의 외부리이드에의 접속단자임을 특징으로 하는 내식성알미루늄 전자재료.
  9. 반도체소자와, 이 반도체소자상에 설치된 배선막과, 이 배선막에 접합된 금속세선과, 이 세선의 타단에 접합된 리이드프레임을 구비하여, 상기 반도체소자 및 세선이 합성수지에 의해서 덮혀 있는 것에 있어서 상기 세선 및 배선막의 최소한 한쪽이 알미루늄을 주성분으로 하고, 이것에 소량의 귀금속을 포함하는 합금으로 이루어지며, 상기 귀금속의 함유량이 초정알미루늄을 갖는 공정조성이하인 것을 특징으로 하는 반도체 장치.
  10. 상기 귀금속의 함유량이 0.01∼10중량%이며, 잔부가 실질적으로 알미루늄인 특허청구의 범위 9기재의 반도체장치.
  11. 상기 합성수지는 에폭시수지인 특허청구의 범위 10기재의 반도체장치.
  12. 상기 금속세선의 선단에 이 세선에 의해서 형성된 보슬기 상기 배선막에 고상접합되어 있는 특허청구의 범위 9기재의 반도체장치.
  13. 상기 금속세선은 불완전어니일링되어 있는 특허청구의 범위 9기재 반도체장치.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019830003637A 1982-08-11 1983-08-03 내식성 알루미늄 전자재료 KR910003574B1 (ko)

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Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4845543A (en) * 1983-09-28 1989-07-04 Hitachi, Ltd. Semiconductor device and method of manufacturing the same
IT1183375B (it) * 1984-02-24 1987-10-22 Hitachi Ltd Dispositivo a semiconduttori comprendente una pallina, fili conduttori e porzioni conduttrici esterneche sono collegate alla pallina mediante tali fili conduttori
FR2561445B1 (fr) * 1984-02-24 1988-03-18 Hitachi Ltd Fils de connexion d'une pastille semi-conductrice, notamment encapsulee sous resine
FR2566182B1 (fr) * 1984-02-24 1988-01-08 Hitachi Ltd Dispositif a semiconducteurs
JPS6132444A (ja) * 1984-07-24 1986-02-15 Hitachi Ltd 集積回路装置
US4993622A (en) * 1987-04-28 1991-02-19 Texas Instruments Incorporated Semiconductor integrated circuit chip interconnections and methods
EP0288776A3 (en) * 1987-04-28 1989-03-22 Texas Instruments Incorporated Gold alloy wire connection to copper doped aluminum semiconductor circuit interconnection bonding pad
JPH01134426A (ja) * 1987-11-20 1989-05-26 Hitachi Ltd 液晶デイスプレイ駆動用薄膜トランジスタ
JP3425973B2 (ja) * 1992-08-19 2003-07-14 日本特殊陶業株式会社 スパークプラグおよびその製造方法
US5434104A (en) * 1994-03-02 1995-07-18 Vlsi Technology, Inc. Method of using corrosion prohibiters in aluminum alloy films
JP4316019B2 (ja) * 1996-10-01 2009-08-19 株式会社東芝 半導体装置及び半導体装置製造方法
US6194777B1 (en) * 1998-06-27 2001-02-27 Texas Instruments Incorporated Leadframes with selective palladium plating
JP3422937B2 (ja) * 1998-07-27 2003-07-07 株式会社新川 ワイヤボンディングにおけるボール形成方法
JP3833216B2 (ja) 2001-09-24 2006-10-11 リカ デンシ アメリカ, インコーポレイテッド 電気的テストプローブ及びその製造方法
US7314781B2 (en) * 2003-11-05 2008-01-01 Lsi Corporation Device packages having stable wirebonds
US8101871B2 (en) * 2009-05-26 2012-01-24 Lsi Corporation Aluminum bond pads with enhanced wire bond stability
DE102009045184B4 (de) 2009-09-30 2019-03-14 Infineon Technologies Ag Bondverbindung zwischen einem Bonddraht und einem Leistungshalbleiterchip
JP5680138B2 (ja) * 2013-05-15 2015-03-04 田中電子工業株式会社 耐食性アルミニウム合金ボンディングワイヤ
US20160099200A1 (en) * 2014-10-01 2016-04-07 Stmicroelectronics S.R.L. Aluminum alloy lead frame for a semiconductor device and corresponding manufacturing process

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US1560845A (en) * 1925-04-22 1925-11-10 Melvin E Page Alloy
US2805370A (en) * 1956-04-26 1957-09-03 Bell Telephone Labor Inc Alloyed connections to semiconductors
DE1210082B (de) * 1963-09-10 1966-02-03 Rheinische Blattmetall Ag UEberwiegend aus Reinstaluminium bestehende Metallfolie fuer Elektrolytkondensatoren
USRE26907E (en) * 1969-05-13 1970-06-09 Aluminum alloys and articles made therefrom
US3765877A (en) * 1972-11-24 1973-10-16 Olin Corp High strength aluminum base alloy
DE2419157C3 (de) * 1974-04-20 1979-06-28 W.C. Heraeus Gmbh, 6450 Hanau Metallischer Träger für Halbleiterbauelemente und Verfahren zu seiner Herstellung
US3934108A (en) * 1974-09-16 1976-01-20 Uthe Technology, Inc. Lead bonding method and apparatus
JPS51142988A (en) * 1975-06-04 1976-12-08 Hitachi Ltd Semiconductor devices
JPS5282183A (en) * 1975-12-29 1977-07-09 Nec Corp Connecting wires for semiconductor devices
US4316209A (en) * 1979-08-31 1982-02-16 International Business Machines Corporation Metal/silicon contact and methods of fabrication thereof
JPS56114363A (en) * 1980-02-15 1981-09-08 Toshiba Corp Semiconductor device sealed with resin

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JPH0365424B2 (ko) 1991-10-11
DE3367137D1 (en) 1986-11-27
JPS5928553A (ja) 1984-02-15
CA1223138A (en) 1987-06-23
KR910003574B1 (ko) 1991-06-05

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