KR900016480A - 반도체 소자의 본딩(bonding)용 금선 - Google Patents
반도체 소자의 본딩(bonding)용 금선 Download PDFInfo
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- KR900016480A KR900016480A KR1019890015637A KR890015637A KR900016480A KR 900016480 A KR900016480 A KR 900016480A KR 1019890015637 A KR1019890015637 A KR 1019890015637A KR 890015637 A KR890015637 A KR 890015637A KR 900016480 A KR900016480 A KR 900016480A
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- gold wire
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- H01L24/42—Wire connectors; Manufacturing methods related thereto
- H01L24/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L24/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
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- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
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- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45144—Gold (Au) as principal constituent
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
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- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Wire Bonding (AREA)
Abstract
내용 없음.
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
Claims (6)
- La를 30내지 100중량ppm, Be를 2내지 10중량ppm, Ca을 1내지 20중량ppm, Mg을 1내지 10중량ppm 함유하고 나머지가 고순도 Au로 이루어지는 것을 특징으로하는 반도체 소자의 본딩용금선.
- Ca을 1내 지 20중량ppm, Mg을 1내지 10중량ppm, 희토류원소중에서 1종 또는 2종 이상을 1내지 90중량ppm 함유하고, 나머지가 고순도 Au로 이루어지는 것을 특징으로하는 반도체 소자의 본딩용금선.
- 제2항에 있어서, 희토류원소가 La, Ce, Pr의 1종 또 2종 이상인 것을 특징으로 하는 본딩용금선.
- La를 30내지 200중량ppm, Be를 1내지 20중량ppm, Ca을 1내지 20중량ppm, 백금족원소중에서 1종 또는 2종 이상을 I내지 60중량ppm 함유하고, 나머지가 고순도 Au로 이루어지는 것을 특징으로하는 반도체 소자의 본딩용금선.
- 제4항에 있어서, 백금족원소가 Pt. Pd의 1종 또는 2종인 것을 특징으로 하는 본딩용금선.
- La를 30내지 100중량ppm, Be를 0.5내지 30중량ppm, Ca을 1내지 20중량ppm, Mg을 0.5내지 50중량ppm, Ag를 2내지 80중량ppm, Fe를 0.5내지 50중량ppm 함유하고 나머지가 고순도 Au로 이루어지는 것을 특징으로하는 반도체 소자의 본딩용금선.※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
Applications Claiming Priority (12)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP???1-?109449? | 1989-04-28 | ||
JP1109447A JP2680413B2 (ja) | 1989-04-28 | 1989-04-28 | 半導体素子のボンディング用金線 |
JP1-109447 | 1989-04-28 | ||
JP???1-?109450? | 1989-04-28 | ||
JP1109450A JP2680416B2 (ja) | 1989-04-28 | 1989-04-28 | 半導体素子のボンディング用金線 |
JP???1-?109448? | 1989-04-28 | ||
JP1109449A JP2680415B2 (ja) | 1989-04-28 | 1989-04-28 | 半導体素子のボンディング用金線 |
JP1-109450 | 1989-04-28 | ||
JP1-109449 | 1989-04-28 | ||
JP???1-?109447? | 1989-04-28 | ||
JP1109448A JP2680414B2 (ja) | 1989-04-28 | 1989-04-28 | 半導体素子のボンディング用金線 |
JP1-109448 | 1989-04-28 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR900016480A true KR900016480A (ko) | 1990-11-13 |
KR920010119B1 KR920010119B1 (ko) | 1992-11-16 |
Family
ID=27469720
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019890015637A KR920010119B1 (ko) | 1989-04-28 | 1989-10-30 | 반도체 소자의 본딩(bonding)용 금선 |
Country Status (4)
Country | Link |
---|---|
US (1) | US4938923A (ko) |
KR (1) | KR920010119B1 (ko) |
DE (1) | DE3936281A1 (ko) |
GB (2) | GB2231336B (ko) |
Families Citing this family (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB2116208B (en) * | 1981-12-04 | 1985-12-04 | Mitsubishi Metal Corp | Fine gold alloy wire for bonding of a semiconductor device |
JP2780611B2 (ja) * | 1993-09-06 | 1998-07-30 | 三菱マテリアル株式会社 | 少量成分の合金化で硬質化した金装飾品材 |
JP3337049B2 (ja) * | 1995-05-17 | 2002-10-21 | 田中電子工業株式会社 | ボンディング用金線 |
JP3367544B2 (ja) * | 1995-08-23 | 2003-01-14 | 田中電子工業株式会社 | ボンディング用金合金細線及びその製造方法 |
JP3328135B2 (ja) * | 1996-05-28 | 2002-09-24 | 田中電子工業株式会社 | バンプ形成用金合金線及びバンプ形成方法 |
JP3126926B2 (ja) * | 1996-09-09 | 2001-01-22 | 新日本製鐵株式会社 | 半導体素子用金合金細線および半導体装置 |
EP0890987B1 (de) * | 1997-07-07 | 2003-03-05 | W.C. Heraeus GmbH & Co. KG | Feinstdraht aus einer Goldlegierung, Verfahren zu seiner Herstellung und seine Verwendung |
DE19740004A1 (de) * | 1997-09-11 | 1998-11-19 | Siemens Ag | Bonddraht |
DE19821395C2 (de) | 1998-05-13 | 2000-06-29 | Heraeus Gmbh W C | Verwendung eines Feinstdrahtes aus einer nickelhaltigen Gold-Legierung |
JP3382918B2 (ja) * | 2000-05-31 | 2003-03-04 | 田中電子工業株式会社 | 半導体素子接続用金線 |
KR100618052B1 (ko) * | 2003-04-14 | 2006-08-30 | 엠케이전자 주식회사 | 반도체 소자 본딩용 금 합금세선 |
CN100501956C (zh) * | 2004-11-26 | 2009-06-17 | 田中电子工业株式会社 | 半导体组件用金焊接线 |
JP4195495B1 (ja) * | 2007-11-06 | 2008-12-10 | 田中電子工業株式会社 | ボールボンディング用金合金線 |
US11331942B2 (en) * | 2019-08-21 | 2022-05-17 | Quang V. Huwang | Molten gold writing apparatus |
Family Cites Families (22)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3272625A (en) * | 1965-10-18 | 1966-09-13 | James Cohn | Beryllium-gold alloy and article made therefrom |
JPS5282183A (en) * | 1975-12-29 | 1977-07-09 | Nec Corp | Connecting wires for semiconductor devices |
JPS53105968A (en) * | 1977-02-26 | 1978-09-14 | Tanaka Electronics Ind | Gold wire for bonding semiconductor |
JPS5613740A (en) * | 1979-07-16 | 1981-02-10 | Tanaka Kikinzoku Kogyo Kk | Bonding wire for semiconductor element |
JPS5630731A (en) * | 1979-08-21 | 1981-03-27 | Tanaka Denshi Kogyo Kk | Au solder for semiconductor element |
US4330329A (en) * | 1979-11-28 | 1982-05-18 | Tanaka Denshi Kogyo Kabushiki Kaisha | Gold bonding wire for semiconductor elements and the semiconductor element |
JPS5696844A (en) * | 1979-12-29 | 1981-08-05 | Tanaka Denshi Kogyo Kk | Semiconductor element |
JPS56122140A (en) * | 1980-02-29 | 1981-09-25 | Tanaka Denshi Kogyo Kk | Gold wire for bonding semiconductor element and semiconductor element |
JPS5790952A (en) * | 1980-11-27 | 1982-06-05 | Nippon Mining Co Ltd | Bonding wire |
JPS6026822B2 (ja) * | 1981-07-17 | 1985-06-26 | 三菱マテリアル株式会社 | 高張力Au合金細線 |
GB2116208B (en) * | 1981-12-04 | 1985-12-04 | Mitsubishi Metal Corp | Fine gold alloy wire for bonding of a semiconductor device |
JPS5896741A (ja) * | 1981-12-04 | 1983-06-08 | Mitsubishi Metal Corp | 半導体素子結線用高張力au合金細線 |
JPS6030158A (ja) * | 1983-07-29 | 1985-02-15 | Sumitomo Metal Mining Co Ltd | ボンデイングワイヤ− |
JPS61220343A (ja) * | 1985-03-26 | 1986-09-30 | Sumitomo Metal Mining Co Ltd | 金テ−プ |
US4775512A (en) * | 1985-10-01 | 1988-10-04 | Tanaka Denshi Kogyo Kabushiki Kaisha | Gold line for bonding semiconductor element |
JPS62228440A (ja) * | 1986-03-28 | 1987-10-07 | Matsuda Kikinzoku Kogyo Kk | 半導体素子ボンデイング用金線 |
JPS62278241A (ja) * | 1986-05-26 | 1987-12-03 | Shoei Kagaku Kogyo Kk | ボンデイングワイヤ |
JPH0726167B2 (ja) * | 1986-06-09 | 1995-03-22 | 三菱マテリアル株式会社 | 半導体装置のボンデイングワイヤ用Au合金極細線 |
JPH0830229B2 (ja) * | 1987-03-31 | 1996-03-27 | 三菱マテリアル株式会社 | 半導体装置のボンデイングワイヤ用Au合金極細線 |
JPS644441A (en) * | 1987-06-24 | 1989-01-09 | Shoei Kagaku Kogyo Kk | Bonding wire |
JPH0686637B2 (ja) * | 1987-11-09 | 1994-11-02 | 三菱マテリアル株式会社 | ループ成形性の優れた半導体素子ボンディング用Au合金細線 |
JPH0630158A (ja) * | 1992-04-14 | 1994-02-04 | Akira Kaneko | 伝言システム |
-
1989
- 1989-10-30 GB GB8924398A patent/GB2231336B/en not_active Expired - Fee Related
- 1989-10-30 KR KR1019890015637A patent/KR920010119B1/ko not_active IP Right Cessation
- 1989-10-31 DE DE3936281A patent/DE3936281A1/de not_active Withdrawn
- 1989-10-31 US US07/429,485 patent/US4938923A/en not_active Expired - Lifetime
-
1993
- 1993-02-02 GB GB9301998A patent/GB2262944B/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
DE3936281A1 (de) | 1990-10-31 |
GB2262944A (en) | 1993-07-07 |
GB2231336A (en) | 1990-11-14 |
GB8924398D0 (en) | 1989-12-20 |
GB2231336B (en) | 1993-09-22 |
GB2262944B (en) | 1993-09-22 |
KR920010119B1 (ko) | 1992-11-16 |
US4938923A (en) | 1990-07-03 |
GB9301998D0 (en) | 1993-03-17 |
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