KR900016480A - 반도체 소자의 본딩(bonding)용 금선 - Google Patents

반도체 소자의 본딩(bonding)용 금선 Download PDF

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KR900016480A
KR900016480A KR1019890015637A KR890015637A KR900016480A KR 900016480 A KR900016480 A KR 900016480A KR 1019890015637 A KR1019890015637 A KR 1019890015637A KR 890015637 A KR890015637 A KR 890015637A KR 900016480 A KR900016480 A KR 900016480A
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ppm
weight
gold wire
semiconductor devices
bonding
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KR1019890015637A
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KR920010119B1 (ko
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다케시 구지라오카
고오이찌로오 무꼬야마
히로미 야마모도
켄이찌 구리하라
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우쓰미 리세이
다나카 덴시 고오교오 가부시기가이샤
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Priority claimed from JP1109447A external-priority patent/JP2680413B2/ja
Priority claimed from JP1109450A external-priority patent/JP2680416B2/ja
Priority claimed from JP1109449A external-priority patent/JP2680415B2/ja
Priority claimed from JP1109448A external-priority patent/JP2680414B2/ja
Application filed by 우쓰미 리세이, 다나카 덴시 고오교오 가부시기가이샤 filed Critical 우쓰미 리세이
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  • Wire Bonding (AREA)

Abstract

내용 없음.

Description

반도체 소자의 본딩(bonding)용 금선
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음

Claims (6)

  1. La를 30내지 100중량ppm, Be를 2내지 10중량ppm, Ca을 1내지 20중량ppm, Mg을 1내지 10중량ppm 함유하고 나머지가 고순도 Au로 이루어지는 것을 특징으로하는 반도체 소자의 본딩용금선.
  2. Ca을 1내 지 20중량ppm, Mg을 1내지 10중량ppm, 희토류원소중에서 1종 또는 2종 이상을 1내지 90중량ppm 함유하고, 나머지가 고순도 Au로 이루어지는 것을 특징으로하는 반도체 소자의 본딩용금선.
  3. 제2항에 있어서, 희토류원소가 La, Ce, Pr의 1종 또 2종 이상인 것을 특징으로 하는 본딩용금선.
  4. La를 30내지 200중량ppm, Be를 1내지 20중량ppm, Ca을 1내지 20중량ppm, 백금족원소중에서 1종 또는 2종 이상을 I내지 60중량ppm 함유하고, 나머지가 고순도 Au로 이루어지는 것을 특징으로하는 반도체 소자의 본딩용금선.
  5. 제4항에 있어서, 백금족원소가 Pt. Pd의 1종 또는 2종인 것을 특징으로 하는 본딩용금선.
  6. La를 30내지 100중량ppm, Be를 0.5내지 30중량ppm, Ca을 1내지 20중량ppm, Mg을 0.5내지 50중량ppm, Ag를 2내지 80중량ppm, Fe를 0.5내지 50중량ppm 함유하고 나머지가 고순도 Au로 이루어지는 것을 특징으로하는 반도체 소자의 본딩용금선.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019890015637A 1989-04-28 1989-10-30 반도체 소자의 본딩(bonding)용 금선 KR920010119B1 (ko)

Applications Claiming Priority (12)

Application Number Priority Date Filing Date Title
JP???1-?109449? 1989-04-28
JP1109447A JP2680413B2 (ja) 1989-04-28 1989-04-28 半導体素子のボンディング用金線
JP1-109447 1989-04-28
JP???1-?109450? 1989-04-28
JP1109450A JP2680416B2 (ja) 1989-04-28 1989-04-28 半導体素子のボンディング用金線
JP???1-?109448? 1989-04-28
JP1109449A JP2680415B2 (ja) 1989-04-28 1989-04-28 半導体素子のボンディング用金線
JP1-109450 1989-04-28
JP1-109449 1989-04-28
JP???1-?109447? 1989-04-28
JP1109448A JP2680414B2 (ja) 1989-04-28 1989-04-28 半導体素子のボンディング用金線
JP1-109448 1989-04-28

Publications (2)

Publication Number Publication Date
KR900016480A true KR900016480A (ko) 1990-11-13
KR920010119B1 KR920010119B1 (ko) 1992-11-16

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KR1019890015637A KR920010119B1 (ko) 1989-04-28 1989-10-30 반도체 소자의 본딩(bonding)용 금선

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US (1) US4938923A (ko)
KR (1) KR920010119B1 (ko)
DE (1) DE3936281A1 (ko)
GB (2) GB2231336B (ko)

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JP3382918B2 (ja) * 2000-05-31 2003-03-04 田中電子工業株式会社 半導体素子接続用金線
KR100618052B1 (ko) * 2003-04-14 2006-08-30 엠케이전자 주식회사 반도체 소자 본딩용 금 합금세선
CN100501956C (zh) * 2004-11-26 2009-06-17 田中电子工业株式会社 半导体组件用金焊接线
JP4195495B1 (ja) * 2007-11-06 2008-12-10 田中電子工業株式会社 ボールボンディング用金合金線
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JPS56122140A (en) * 1980-02-29 1981-09-25 Tanaka Denshi Kogyo Kk Gold wire for bonding semiconductor element and semiconductor element
JPS5790952A (en) * 1980-11-27 1982-06-05 Nippon Mining Co Ltd Bonding wire
JPS6026822B2 (ja) * 1981-07-17 1985-06-26 三菱マテリアル株式会社 高張力Ａｕ合金細線
GB2116208B (en) * 1981-12-04 1985-12-04 Mitsubishi Metal Corp Fine gold alloy wire for bonding of a semiconductor device
JPS5896741A (ja) * 1981-12-04 1983-06-08 Mitsubishi Metal Corp 半導体素子結線用高張力ａｕ合金細線
JPS6030158A (ja) * 1983-07-29 1985-02-15 Sumitomo Metal Mining Co Ltd ボンデイングワイヤ−
JPS61220343A (ja) * 1985-03-26 1986-09-30 Sumitomo Metal Mining Co Ltd 金テ−プ
US4775512A (en) * 1985-10-01 1988-10-04 Tanaka Denshi Kogyo Kabushiki Kaisha Gold line for bonding semiconductor element
JPS62228440A (ja) * 1986-03-28 1987-10-07 Matsuda Kikinzoku Kogyo Kk 半導体素子ボンデイング用金線
JPS62278241A (ja) * 1986-05-26 1987-12-03 Shoei Kagaku Kogyo Kk ボンデイングワイヤ
JPH0726167B2 (ja) * 1986-06-09 1995-03-22 三菱マテリアル株式会社 半導体装置のボンデイングワイヤ用Ａｕ合金極細線
JPH0830229B2 (ja) * 1987-03-31 1996-03-27 三菱マテリアル株式会社 半導体装置のボンデイングワイヤ用Ａｕ合金極細線
JPS644441A (en) * 1987-06-24 1989-01-09 Shoei Kagaku Kogyo Kk Bonding wire
JPH0686637B2 (ja) * 1987-11-09 1994-11-02 三菱マテリアル株式会社 ループ成形性の優れた半導体素子ボンディング用Ａｕ合金細線
JPH0630158A (ja) * 1992-04-14 1994-02-04 Akira Kaneko 伝言システム

Also Published As

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DE3936281A1 (de) 1990-10-31
GB2262944A (en) 1993-07-07
GB2231336A (en) 1990-11-14
GB8924398D0 (en) 1989-12-20
GB2231336B (en) 1993-09-22
GB2262944B (en) 1993-09-22
KR920010119B1 (ko) 1992-11-16
US4938923A (en) 1990-07-03
GB9301998D0 (en) 1993-03-17

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