CN100501956C - 半导体组件用金焊接线 - Google Patents

半导体组件用金焊接线 Download PDF

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CN100501956C
CN100501956C CNB2005800407074A CN200580040707A CN100501956C CN 100501956 C CN100501956 C CN 100501956C CN B2005800407074 A CNB2005800407074 A CN B2005800407074A CN 200580040707 A CN200580040707 A CN 200580040707A CN 100501956 C CN100501956 C CN 100501956C
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quality ppm
alloy
surplus
pressure welding
quality
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CN101065838A (zh
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手岛聪
三上道孝
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Tanaka Denshi Kogyo KK
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Tanaka Denshi Kogyo KK
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    • C—CHEMISTRY; METALLURGY
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Abstract

提供即使焊接线的线径变细至23μm以下，以有优越真圆度的压焊焊球所形成，且具有能耐焊接线熔流的裂断应力的半导体组件用金(Au)焊接线。一种半导体组件用金焊接线，是以由Au基体及机能性元素而成的Au合金而成，其特征在于，该Au基体含有Be 3～15质量ppm、Ca 3～40质量ppm、La 3～20质量ppm，该Au合金的压焊焊球的真圆度为0.95～1.05。

Description

半导体组件用金焊接线
技术领域
本发明是有关半导体的集成电路组件上的电极和为了连接电路配线板的外部引线而用的半导体组件用金(Au)焊接线，换句话说，是有关可使压焊球的真圆度提高的半导体组件用Au焊接线。
背景技术
长久以来连接半导体装置所用的IC芯片电极和外部引线的线径15～30μm程度的线，由焊接线的强度较优的观点，以纯度99.99质量％以上的高纯度金内添加有微量的元素的超细线是较常被使用着。至于连接半导体组件用Au焊接线的方法的第一次压焊方式，以并用超音波的热压焊法是较主要的被使用着，以电弧加热方式加热熔解焊接线尖端，利用表面张力使形成焊球后，使于150～300℃的范围内已加热的半导体组件的电极上压焊焊球部，其后通过超音波压焊方式直接使焊接线楔形焊接到外部引线侧。为了使用作晶体管或IC等的半导体装置，于利用前述的焊接线的焊接后，以保护Si芯片、焊接线和Si芯片经安装的部分引导框架为目的，即以环氧树脂封装。
最近，半导体装置的小型化、高密度化的要求正予提高着，为了因应IC芯片的多脚(pin)化伴随多脚化的狭窄间距(pitch)化，Au焊接线的细线化即被要求着。尤其，随着半导体装置的更高积体化和小型化、薄型化和高功能化，半导体装置的大小正日益变小。由而，焊垫的大小亦由边长100μm减少到边长40μm。为了避免由焊接线的细线化引起的焊接线本身的絶对的刚性的降低、焊垫间隔的狭小化引起的相邻焊接线间的短路，对焊接线方面即被要求需具有较高的裂断应力。另外，于焊垫的间隔亦变成狭小化时，为防止相邻的压焊焊球的接触，对焊接线方面就被要求压焊焊球直径需具有较小的分散性。
于公知的焊接线方面，由于具有烈段应力和压焊直径的分散性呈现相反的特性，所以这二特性并不能同时成立。为防止焊接线相互间的接触，若提高焊接线强度时，则压焊焊球直径的分散性即变大且压焊焊球会接触。反的说来，为了减少压焊焊球直径的分散性，如果降低焊接线强度时，则成形时的焊接线熔流变大，焊接线相互间会接触。因具有如此相反的特性，以至不能使高密度实际封装实现。
如果想要举例说明与前述的焊接线有关的文献，就如同下示。
【专利文献1】日本特公平2-12022号公报
【专利文献2】日本专利第3,143,755公报
【专利文献3】日本特开平5-179375号公报
【专利文献4】日本特6-145842号公报
【专利文献5】日本特开平7-335686公报
【专利文献6】日本特开2004-22887号公报
发明内容
本发明的目的在于提供一种半导体组件用金焊接线，本发明提供的焊接线的线径变细至23μm以下，以有优越真圆度的压焊焊球所形成，且具有能耐焊接线熔流的裂断应力的半导体组件用Au焊接线。
为实现上述目的，本发明提供的半导体组件用Au焊接线，是以由金(Au)基体和机能性元素而成的Au合金，其中，该Au基体含有Be 3～15质量ppm、Ca 3～40质量ppm、La 3～20质量ppm，余量是Au而成的Au合金，提高该Au合金的压焊焊球的真圆度和该Au合金焊接线的裂断应力。
本发明提供的半导体组件用Au焊接线，还可以是以由金(Au)基体和机能性元素而成的Au合金，其中，该Au基体含有Be 3～15质量ppm、Ca 3～40质量ppm、La 3～20质量ppm，余量是Au而成的Au合金，至于该机能性元素含有Ce及/或Eu 3～20质量ppm，提高该Au合金的压焊焊球的真圆度和该Au合金焊接线的裂断应力。
本发明提供的半导体组件用Au焊接线，还可以是以由金(Au)基体和机能性元素而成的Au合金，其中，该Au基体含有Be 3～15质量ppm、Ca 3～40质量ppm、La 3～20质量ppm，余量是Au而成的Au合金，至于该机能性元素含有由Mg或Si选出的至少一种3～20质量ppm，提高该Au合金的压焊焊球的真圆度和该Au合金焊接线的裂断应力。
本发明提供的半导体组件用Au焊接线，还可以是以由金(Au)基体和机能性元素而成的Au合金，其中，该Au基体含有Be 3～15质量ppm、Ca 3～40质量ppm、La 3～20质量ppm，余量是Au而成的Au合金，至于该机能性元素，含有Sn 3～80质量ppm，提高该Au合金的压焊焊球的真圆度和该Au合金焊接线的裂断应力。
本发明提供的半导体组件用Au焊接线，还可以是以由金(Au)基体及机能性元素而成的Au合金，其中，该Au基体含有Be 3～15质量ppm、Ca 3～40质量ppm、La 3～20质量ppm，余量是Au而成的Au合金，至于该机能性元素，含有由Mg或Si选出的至少一种3～20质量ppm和Y3～20质量ppm，提高该Au合金的压焊焊球的真圆度和该Au合金焊接线的裂断应力。
本发明提供的半导体组件用Au焊接线，还可以是以由金(Au)基体和机能性元素而成的Au合金，其中，该Au基体含有Be 3～15质量ppm、Ca 3～40质量ppm、La 3～20质量ppm，余量是Au而成的Au合金，至于该机能性元素，含有由Mg或Si选出的至少一种3～20质量ppm和Ce和/或Eu3～20质量ppm，提高该Au合金的压焊焊球的真圆度和该Au合金焊接线的裂断应力。
本发明提供的半导体组件用Au焊接线，还可以是以由Au基体和机能性元素而成的Au合金，其中，该Au基体含有Be3～15质量ppm、Ca 3～40质量ppm、La 3～20质量ppm，余量是Au而成的Au合金，至于该机能性元素，含有由Sn 3～80质量ppm，和Ce和/或Eu 3～20质量ppm，提高该Au合金的压焊焊球的真圆度和该Au合金焊接线的裂断应力。
本发明提供的半导体组件用Au焊接线，还可以是以由金(Au)基体和机能性元素而成的Au合金，其中，该Au基体含有Be 3～15质量ppm、Ca 3～40质量ppm、La 3～20质量ppm，余量是Au而成的Au合金，至于该机能性元素，含有由Mg或Si选出的至少一种3～20质量ppm，和Ce和/或Eu 3～20质量ppm，再者Y 3～20质量ppm，提高该Au合金的压焊焊球的真圆度和该Au合金焊接线的裂断应力。
所述的半导体组件用金焊接线，其中，该金(Au)基体所含有的Au的纯度是99.99质量％以上。
所述的半导体组件用金焊接线，其中，该金(Au)合金的压焊焊球的真圆度为0.95～1.05的范围且该Au合金的裂断应力在23kg/mm2以上。
所述的半导体组件用金焊接线，其中，该金焊接线的线径在23μm以下。
换言之，本发明可提供以下所示的半导体组件用Au焊接线。
(1)以由金(Au)基体和机能性元素而成的Au合金，其中，该Au基体含有Be 3～15质量ppm、Ca 3～40质量ppm、La 3～20质量ppm，余量是Au而成的Au合金，提高该Au合金的压焊焊球的真圆度和该Au合金焊接线的裂断应力。
(2)以由金(Au)基体和机能性元素而成的Au合金，其中，该Au基体含有Be 3～15质量ppm、Ca 3～40质量ppm、La 3～20质量ppm，余量是Au而成的Au合金，至于该机能性元素含有Ce及/或Eu 3～20质量ppm，提高该Au合金的压焊焊球的真圆度和该Au合金焊接线的裂断应力。
(3)以由金(Au)基体和机能性元素而成的Au合金，其中，该Au基体含有Be 3～15质量ppm、Ca 3～40质量ppm、La 3～20质量ppm，余量是Au而成的Au合金，至于该机能性元素含有由Mg或Si选出的至少一种3～20质量ppm，提高该Au合金的压焊焊球的真圆度和该Au合金焊接线的裂断应力。
(4)以由金(Au)基体和机能性元素而成的Au合金，其中，该Au基体含有Be 3～15质量ppm、Ca 3～40质量ppm、La 3～20质量ppm，余量是Au而成的Au合金，至于该机能性元素，含有Sn 3～80质量ppm，提高该Au合金的压焊焊球的真圆度和该Au合金焊接线的裂断应力。
(5)以由金(Au)基体及机能性元素而成的Au合金，其中，该Au基体含有Be 3～15质量ppm、Ca 3～40质量ppm、La 3～20质量ppm，余量是Au而成的Au合金，至于该机能性元素，含有由Mg或Si选出的至少一种3～20质量ppm和Y 3～20质量ppm，提高该Au合金的压焊焊球的真圆度和该Au合金焊接线的裂断应力。
(6)以由金(Au)基体和机能性元素而成的Au合金，其中，该Au基体含有Be 3～15质量ppm、Ca 3～40质量ppm、La 3～20质量ppm，余量是Au而成的Au合金，至于该机能性元素，含有由Mg或Si选出的至少一种3～20质量ppm和Ce和/或Eu 3～20质量ppm，提高该Au合金的压焊焊球的真圆度和该Au合金焊接线的裂断应力。
(7)以由金(Au)基体和机能性元素而成的Au合金，其中，该Au基体含有Be 3～15质量ppm、Ca 3～40质量ppm、La 3～20质量ppm，余量是Au而成的Au合金，至于该机能性元素，含有由Sn 3～80质量ppm，和Ce和/或Eu 3～20质量ppm，提高该Au合金的压焊焊球的真圆度和该Au合金焊接线的裂断应力。
(8)以由金(Au)基体和机能性元素而成的Au合金，其中，该Au基体含有Be 3～15质量ppm、Ca 3～40质量ppm、La 3～20质量ppm，余量是Au而成的Au合金，至于该机能性元素，含有由Mg或Si选出的至少一种3～20质量ppm，和Ce和/或Eu 3～20质量ppm，再者Y 3～20质量ppm，提高该Au合金的压焊焊球的真圆度和该Au合金焊接线的裂断应力。
(9)该金(Au)基体所含有的Au的纯度是99.99质量％以上。
(10)该金(Au)合金的压焊焊球的真圆度为0.95～1.05的范围且该Au合金的裂断应力在23kg/mm2以上。
(11)该金焊接线的线径在23μm以下。
本发明中的压焊焊球真圆度如下所示般予以定义着。
也就是说，自压焊方向观察由超细线制作焊接线并进行焊球焊接之际的压焊直径时，以来自焊接机器的超音波的施加方向当作Y轴，与Y轴正交的轴当作X轴，以压焊直径的X轴及Y轴的最大数值为X轴的数值(xi)及Y轴的数值(yi)。因此，由焊接装置对200条进行第一次压焊，求取各自的X轴的测定值(xi)及Y轴的测定值(yi)。因此，由此200条之中选择任意的50条，对该50条各自求取以Y轴的测定值(yi)除X轴的测定值(xi)时的计算值。最后以此50条计算值的平均值作为压焊焊球的真圆度。
于本发明的裂断应力，以该焊接线的截面积除于400～500℃热处理经连续拉线制作的超细线的焊接线并经调质成伸长率4％时的裂断应力的拉伸试验的裂断强度，作为裂断应力。
本发明的半导体组件用Au焊接线，是由Au基体和机能性元素而成的Au合金而成，其线径即使成为23μm以下的细线径，在保持提高焊接线本身絶对刚性的状态下，亦可使兼具压焊焊球真圆度的功效。结果，使于第一次压焊着的压焊面积狭窄即可，即使进行高密度实际封装，相邻的焊接线亦不致短路。
具体实施方式
于本发明的半导体组件用Au焊接线方面，该Au基体由Be、Ca、La与Au而成。本发明的Au基体用的Au为高纯度金，其纯度为99.99质量％以上，宜为99.999质量％以上。至今为止，前述的Au基体较纯金基体坚硬且增加刚性为人所知的。但是，焊接线的线径若由25μm变细成23μm时，则采用此等既知的Au基体的Au合金会过于变硬而具有半导体芯片容易龟裂的缺陷。
本发明探讨并寻找于即使添加多种类的元素时亦可使硬度及刚性稳定的Au基体时，含有Ca、Be及La合计75质量ppm以下，宜为59质量ppm以下的Au基体，可知对其它的添加元素(机能性元素)在硬度及刚性的观点上是稳定的。虽然Be、La及Ca不论何者对纯金均容易使熔融焊球的形状变形的元素，但是Be、La及Ca不论何者均具有增加刚性作用，Ca主要上具有可取得全体的配衡作用。为使此等作用明了起见，以Be、Ca及La的纯度各自在99质量％以上，宜为99.9质量％以上。
若依本发明的此一Au-Be-Ca-La基体(Au基体)，若将该微量元素(Ca，Be及La)的含量规定成指定的范围时，可知会使压焊焊球真圆度提高。其含量对形成焊接线的Au合金的全体质量，Be在3～15质量ppm，Ca在3～40质量ppm，加上，La在3～20质量ppm的范围，宜为Be在7～13质量ppm，Ca在7～30质量ppm，La在8～16质量ppm的范围。Be、Ca或La若各自未满3质量ppm时，制成焊接线时的絶对刚性会降低，树脂成形之际，经予压焊的焊接线会未能耐受树脂的流动，将此现象称作焊接线流动。尤其使线径变窄成23μm以下时，此焊接线流动会大大地出现此种倾向。如予添加Be超过15质量ppm时，则热处理焊接线并予调质成伸长率4％之际，会使焊接线的强度降低。若予添加Ca超过40质量ppm时，或La超过20质量ppm时，则于焊球焊接时的压焊焊球变形即成不稳定，压焊焊球直径的分散性会变大。
Au基体内所含的该微量元素合计量为9质量ppm以上，宜为22质量ppm。
对此一Au-Be-Ca-La基体已微量添加有机能性元素Ce或Eu的Au-Be-Ca-La-Ce合金及Au-Be-Ca-La-Eu合金，不论何者若规定微量元素的含量成指定的范围时，则可使裂断应力提高，且使压焊焊球的真圆度提高。其含量是对Au合金的全体质量，Be在3～15质量ppm，Ca在3～40质量ppm，加上，La在3～20质量ppm的范围，宜为Be在7～13质量ppm，Ca在7～30质量ppm，La在8～16质量ppm的范围。Be、Ca或La如各自未满3质量ppm时，制成焊接线时的絶对刚性会降低，经予压焊的焊接线会未能耐受焊接线流动。尤其使线径变窄成23μm以下时，此焊接线流动会大大地出现这种倾向。如予添加Be超过15质量ppm时，则热处理焊接线并予调质成伸长率4％之际，会使焊接线的强度降低。如予添加Ca超过40质量ppm时，或La超过20质量ppm时，则于焊球焊接时的压焊焊球变形即成不稳定，压焊焊球直径的分散性会变大。
机能性元素的Ce或Eu的纯度为99质量％以上，宜为99.9质量％以上。其含量对形成焊接线的Au合金的全体质量，在3～20质量ppm，宜为8～16质量ppm的范围。Ce或Eu为微细的分散于Au-Be-Ca-La四元合金内，可知可使裂断应力显着提高的元素。另外，使Ce或Eu所具的裂断应力提高的功效，即使同时添加有机能性元素Si或Mg或Ga，或Sb或Sn或Bi，或Y的微量元素，亦可知对Ce或Eu所具的裂断应力的提高功效较难受其影响。但是，Ce或Eu未满3质量ppm时，则裂断应力的提高功效了也不足，又如予添加Ce或Eu超过20质量ppm时，则压焊焊球的分散性会变大。因此Ce或Eu的范围如上所述般予以决定的。
对此Au-Be-Ca-La四元合金已微量添加有机能性元素Mg、Si或Ga的Au-Be-Ca-La-Mg合金、Au-Be-Ca-La-Si合金或Au-Be-Ca-La-Ga合金，若规定微量元素的含量成指定的范围时，则可使裂断应力提高，且使压焊焊球的真圆度提高。其含量对形成焊接线的Au合金的全体质量，Mg在3～20质量ppm，Si在3～20质量ppm，加上，Ga在3～20质量ppm的范围，宜为Mg在7～18质量ppm，Si在7～18质量ppm，加上Ga在7～18质量ppm的范围。Mg、Si或Ga若各自未满3质量ppm时，则会成为不具提高真圆度的功效。若予添加Mg超过20质量ppm时，Si超过20质量ppm时，或Ga超过20质量ppm时，则于焊球焊接时的压焊焊球的变形即成不稳定，压焊焊球直径的分散性会变大。因此Mg、Si或Ga的范围如上所述般予以决定的。
Mg、Si或Ga的纯度，为各自99质量％以上，宜为99.9质量％以上。Mg、Si或Ga为微细的分散于Au-Be-Ca-La四元合金内，可知可使压焊焊球的真圆度提高的元素。另外，使Mg、Si或Ga所具的使压焊焊球的真圆度提高的功效，为即使同时添加Ce、Eu或Y的微量元素，亦可知较难受其影响。
对此Au-Be-Ca-La四元合金已微量添加有机能性元素Sn、Sb或Bi的Au-Be-Ca-La-Sn合金、Au-Be-Ca-La-Sb合金及Au-Be-Ca-La-Bi合金，不论何者如规定微量元素的含量成指定的范围时，则可使裂断应力提高，且使压焊焊球的真圆度提高。Au合金基体中的含量，是对形成焊接线的Au合金的全体质量，Sb在3～80质量ppm，Sn在3～80质量ppm，加上，Bi在3～80质量ppm的范围，宜为不论何者均在30～60质量ppm的范围。Sn、Sb或Bi若予添加各自未满3质量ppm及80质量ppm以上时，则牢固的形成压焊焊球的真圆度的功效并不足，则于焊球焊接时的压焊焊球的变形即成不稳定，压焊焊球直径分散性会变大。
Sb、Sn或Bi的纯度为99质量％以上，宜为99.9质量％以上。Sb，Sn或Bi为微细的分散于Au-Be-Ca-La四元合金内，可知显着的可使压焊焊球的真圆度提高的元素。另外，使Sb，Sn或Bi所具的使压焊焊球的真圆度提高的功效，即使同时添加Ce、Eu的微量元素，亦可知较难受其影响。
且，全部微量元素对本发明的Au合计，为100ppm以下，宜为20～90ppm的范围。除以「99.99质量％以上的Au」表示外，因Au基体中的分散性良好，即使使焊接线的线径由25μm变窄成23μm以下时，亦可得稳定的真圆度。焊接线的线径为25～5μm，宜为设成23～8μm。
其次，举出实施例说明本发明。
实施例1～53
于纯度99.999质量％的高纯度Au内配合微量元素至成表1所记载的数值(质量ppm)，在真空熔解炉熔解铸造。对此进行拉线加工，于线径25μm、22μm、20μm及15μm时进行最终热处理，调整伸长率为4％。在大气中对此超细线由焊球压焊方式进行第一次压焊至边长60μm的Al焊垫上的半导体芯片时，在第一次压焊时所有的焊球予成形于边长60μm的Al焊垫内。其评估结果示于表2。
比较例1～22
除微量元素的成分组成变化成表3所示以外，其余与实施例同法取得热处超细线。与实施例同法评估此超细线。其结果合并表示于表4。
且「裂断应力」的评估是以如下所述般进行。于纯度99.999质量％的高纯度Au内配合微量元素至成表1所记载的数值(质量ppm)，在真空熔解炉熔解铸造。对此进行拉线加工，于线径25μm、22μm、20μm及15μm时进行最终热处理，将已调整伸长率为4％的焊接线裁切成10cm长度，取各10条进行拉伸试验，求取其平均值并进行评估。平均值在23kg/mm2以上用◎记号表示，20kg/mm2以上至未满23kg/mm2用○记号表示，未满20kg/mm2以上用△表示。
「压焊焊球之真圆度」的评估，是对上述方式制得的焊接线进行第一次的焊接于Si芯片上的Al电极(Al厚度：约1μm)，其后于经予镀银而由42合金而成的引线之间进行第二次焊接并进行接线。该时幅宽(span)为3mm，条数为200，采用已进行接线的焊接线中任意的50条焊接线进行评估。测量与超音波施加方向平行方向的压焊直径及垂直的方向的压焊直径，该比率在0.95～1.05的范围内用◎记号表示，在0.90～1.10的范围内(在0.95～1.05范围内除外)用○记号表示，其它范围用△记号表示。
「综合评估」是于上述二种评估中，以◎具二个以上为特别良好者表示作◎，以◎具一个而无△者为良好表示作○，以无◎和△者为普通表示作△，以△具一个者表示作×。
由上述的结果显而可知，本发明的Au合金焊接线如微量元素的添加量在规定值内时，可知超细线的线径即使成为23μm以下亦可得令人满意的压焊功效。相对于此，公知的Au合金焊接线的情况，微量元素的添加量在规定值外，线径在23μm以下的情况，亦可知未能获得焊接功效。
表1
 
编号 Au Be(质量ppm) Ca(质量ppm) La(质量ppm) Ce(质量ppm)e Eu(质量ppm) Mg(质量ppm) Si(质量ppm) Ga(质量ppm) Sb(质量ppm) Sn(质量ppm) Bi(质量ppm) Y(质量ppm)
1 余量 5 15 5
2 余量 5 10 15
3 余量 10 10 10
4 余量 10 5 20
5 余量 15 20 15
6 余量 15 5 5
7 余量 5 20 5 5
8 余量 10 10 10 10
9 余量 10 10 15 20
10 余量 5 20 5 5
11 余量 10 10 10 10
12 余量 15 5 15 20
13 余量 5 20 10 5
14 余量 10 10 15 15
15 余量 10 15 10 10
16 余量 15 5 20 20
17 余量 5 25 5 10
18 余量 15 10 10 15
19 余量 5 20 10 20
20 余量 10 10 15 50
21 余量 10 15 10 50
22 余量 15 5 20 70
23 余量 5 25 5 30
24 余量 15 10 10 50
25 余量 5 20 10 5 15
26 余量 10 10 15 15 10
27 余量 10 15 10 10 15
28 余量 15 5 20 20 10
29 余量 5 25 5 10 10
30 余量 15 10 10 15 15
31 余量 15 5 5 5 5
32 余量 10 10 10 10 15
33 余量 10 25 20 15 20
34 余量 5 15 15 5 10
35 余量 10 20 10 10 10
36 余量 10 25 5 5 20
37 余量 15 10 10 5 5
38 余量 5 15 25 15 10
39 余量 5 20 5 15 10 15
40 余量 10 10 20 10 5 5 5
41 余量 10 20 10 15 30
42 余量 10 10 10 10 50
43 余量 5 5 15 10 70
44 余量 10 25 15 5 30
45 余量 10 10 10 10 50
46 余量 5 20 5 5 70
47 余量 10 30 5 5 30
48 余量 5 10 15 10 50
49 余量 5 10 10 10 70
50 余量 10 20 10 10 20 20 20
51 余量 5 10 20 10 10 5
 
52 余量 10 25 10 10 15 10
53 余量 5 15 15 15 10 5
表2
 
表1的编号 线径μm 真圆度 裂断应力 综合评估
1 25 ○ ○ △
2 25 ◎ ○ ○
3 25 ◎ ○ ○
4 22 ○ ○ △
5 22 ○ ○ △
6 22 ◎ ○ ○
7 20 ○ ○ △
8 20 ◎ ◎ ◎
9 20 ○ ◎ ○
10 15 ○ ○ △
11 15 ○ ◎ ○
12 15 ○ ○ △
13 25 ○ ○ △
14 25 ◎ ○ ○
15 25 ◎ ○ ○
16 22 ◎ ○ ○
17 22 ○ ◎ ○
18 22 ◎ ○ ○
19 20 ◎ ○ ○
20 20 ◎ ○ ○
21 20 ◎ ○ ○
22 15 ○ ○ △
23 15 ○ ○ △
24 15 ◎ ○ ○
25 25 ○ ◎ ○
26 25 ◎ ◎ ◎
27 25 ◎ ◎ ◎
28 22 ◎ ○ ○
29 22 ○ ◎ ○
30 22 ○ ○ △
31 20 ○ ○ △
32 20 ◎ ◎ ◎
33 15 ○ ◎ ○
34 15 ○ ◎ ○
35 15 ◎ ◎ ◎
36 25 ○ ○ △
37 25 ◎ ○ ○
38 25 ○ ◎ ○
39 22 ○ ○ △
40 22 ◎ ○ ○
41 22 ○ ◎ ○
42 20 ◎ ◎ ◎
43 20 ◎ ○ ○
44 20 ○ ◎ ○
45 15 ◎ ◎ ◎
46 15 ○ ◎ ○
47 15 ○ ◎ ○
48 25 ○ ○ △
49 25 ○ ◎ ○
50 25 ○ ◎ ○
51 22 ○ ◎ ○
52 22 ◎ ◎ ◎
53 22 ○ ◎ ○
表3
 
编号 Au Be(质量ppm) Ca(质量ppm) La(质量ppm) Ce(质量ppm)e Eu(质量ppm) Mg(质量ppm) Si(质量ppm) Ga(质量ppm) Sb(质量ppm) Sn(质量ppm) Bi(质量ppm) Y(质量ppm) 其它微量元素(质量ppm)
1 余量 3.1 2.7 11.2 9.6 Pr8.7及Sm3.6
2 余量 14 3 5 10 3 Gd6
3 余量 14 3 5 10 3 Al6
4 余量 16 3 3 3 5 B0.08
5 余量 8 20 6 5 10 In30
6 余量 10 20 20 10 10 10 Pt10及Gd10
7 余量 20 10 10
8 余量 5 50 10
9 余量 10 10 2
10 余量 5 10 5 2
11 余量 10 30 15 30
12 余量 15 5 15 30
13 余量 5 15 10 2
14 余量 10 20 20 30
15 余量 10 5 5 2
16 余量 5 15 5 30
17 余量 5 25 10 2
18 余量 5 10 20 30
19 余量 15 30 10 15 1 1
20 余量 5 5 15 15 30 30 30
21 余量 10 20 10 10 50 50
22 余量 10 30 10 10 30
表4
 
比较例的编号 线径μm 真圆度 裂断应力 综合评估
1 20 ○ △ X
2 20 ○ △ X
3 20 ○ △ X
4 15 △ △ X
5 15 △ ○ X
6 15 △ ○ X
7 22 ○ △ X
8 15 △ ◎ X
9 25 ○ △ X
10 20 △ △ X
11 25 △ ◎ X
12 25 △ △ X
13 25 △ ○ X
14 22 △ ○ X
15 22 △ △ X
16 22 △ △ X
17 20 △ ○ X
18 20 △ ○ X
19 20 △ ○ X
20 22 △ △ X
21 22 △ ○ X
22 22 △ ◎ X

Claims (10)

1、一种半导体组件用金焊接线，是以由金基体和机能性元素而成的Au合金，其特征在于，该金基体为含有Be 3～15质量ppm、Ca 3～40质量ppm、La 3～20质量ppm，余量Au而成的，至于该机能性元素是含有量3～20质量ppm的Ce及/或Eu，提高该Au合金的压焊焊球的真圆度和该Au合金焊接线的裂断应力。
2、一种半导体组件用金焊接线，是以由金基体和机能性元素而成的Au合金，其特征在于，该金基体为含有Be 3～15质量ppm、Ca 3～40质量ppm、La 3～20质量ppm，余量Au而成的，至于该机能性元素含有由Mg或Si选出的至少一种3～20质量ppm，提高该Au合金的压焊焊球的真圆度和该Au合金焊接线的裂断应力。
3、一种半导体组件用金焊接线，是以由金基体和机能性元素而成的Au合金，其特征在于，该金基体为含有Be 3～15质量ppm、Ca 3～40质量ppm、La 3～20质量ppm，余量Au而成的，至于该机能性元素，含有Sn3～80质量ppm，提高该Au合金的压焊焊球的真圆度和该Au合金焊接线的裂断应力。
4、一种半导体组件用金焊接线，是以由金基体及机能性元素而成的Au合金，其特征在于，该金基体为含有Be 3～15质量ppm、Ca 3～40质量ppm、La 3～20质量ppm，余量Au而成的，至于该机能性元素，含有由Mg或Si选出的至少一种3～20质量ppm和Y3～20质量ppm，提高该Au合金的压焊焊球的真圆度和该Au合金焊接线的裂断应力。
5、一种半导体组件用金焊接线，是以由金基体和机能性元素而成的Au合金，其特征在于，该金基体为含有Be 3～15质量ppm、Ca 3～40质量ppm、La 3～20质量ppm，余量Au而成的，至于该机能性元素，含有由Mg或Si选出的至少一种3～20质量ppm和Ce和/或Eu 3～20质量ppm，提高该Au合金的压焊焊球的真圆度和该Au合金焊接线的裂断应力。
6、一种半导体组件用金焊接线，是以由金基体和机能性元素而成的Au合金，其特征在于，该金基体为含有Be 3～15质量ppm、Ca 3～40质量ppm、La 3～20质量ppm，余量Au而成的，至于该机能性元素，含有由Sn 3～80质量ppm，和Ce和/或Eu 3～20质量ppm，提高该Au合金的压焊焊球的真圆度和该Au合金焊接线的裂断应力。
7、一种半导体组件用金焊接线，是以由金基体和机能性元素而成的Au合金，其特征在于，该金基体为含有Be 3～15质量ppm、Ca 3～40质量ppm、La 3～20质量ppm，余量是Au而成的，至于该机能性元素，含有由Mg或Si选出的至少一种3～20质量ppm，和Ce和/或Eu 3～20质量ppm，再者Y 3～20质量ppm，提高该Au合金的压焊焊球的真圆度和该Au合金焊接线的裂断应力。
8、根据权利要求1～7中任一项所述的半导体组件用金焊接线，其中，该金基体所含有的Au的纯度是99.99质量％以上。
9、根据权利要求1～7中任一项所述的半导体组件用金焊接线，其中，该Au合金的压焊焊球的真圆度为0.95～1.05的范围且该Au合金的裂断应力在23kg/mm2以上。
10、根据权利要求1～7中任一项所述的半导体组件用金焊接线，其中，该金焊接线的线径在23μm以下。
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