TWI399446B - 銲球接合用金合金線 - Google Patents
銲球接合用金合金線 Download PDFInfo
- Publication number
- TWI399446B TWI399446B TW097141528A TW97141528A TWI399446B TW I399446 B TWI399446 B TW I399446B TW 097141528 A TW097141528 A TW 097141528A TW 97141528 A TW97141528 A TW 97141528A TW I399446 B TWI399446 B TW I399446B
- Authority
- TW
- Taiwan
- Prior art keywords
- solder ball
- bonding
- mass
- amount
- lanthanum
- Prior art date
Links
- 229910001020 Au alloy Inorganic materials 0.000 title claims abstract description 52
- 230000000996 additive effect Effects 0.000 claims abstract description 26
- 239000000654 additive Substances 0.000 claims abstract description 25
- 229910052737 gold Inorganic materials 0.000 claims abstract description 25
- 239000011575 calcium Substances 0.000 claims description 161
- 229910000679 solder Inorganic materials 0.000 claims description 150
- 239000011777 magnesium Substances 0.000 claims description 81
- 229910052746 lanthanum Inorganic materials 0.000 claims description 77
- FZLIPJUXYLNCLC-UHFFFAOYSA-N lanthanum atom Chemical compound [La] FZLIPJUXYLNCLC-UHFFFAOYSA-N 0.000 claims description 77
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 claims description 66
- 229910052791 calcium Inorganic materials 0.000 claims description 66
- 239000003353 gold alloy Substances 0.000 claims description 49
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 claims description 40
- 229910052749 magnesium Inorganic materials 0.000 claims description 40
- 229910052727 yttrium Inorganic materials 0.000 claims description 40
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 claims description 40
- 239000010931 gold Substances 0.000 claims description 32
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical group [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 24
- 239000012535 impurity Substances 0.000 claims description 5
- 229910052684 Cerium Inorganic materials 0.000 claims description 3
- GWXLDORMOJMVQZ-UHFFFAOYSA-N cerium Chemical compound [Ce] GWXLDORMOJMVQZ-UHFFFAOYSA-N 0.000 claims description 3
- 229910052693 Europium Inorganic materials 0.000 claims 3
- OGPBJKLSAFTDLK-UHFFFAOYSA-N europium atom Chemical compound [Eu] OGPBJKLSAFTDLK-UHFFFAOYSA-N 0.000 claims 3
- 229910052691 Erbium Inorganic materials 0.000 claims 1
- UYAHIZSMUZPPFV-UHFFFAOYSA-N erbium Chemical compound [Er] UYAHIZSMUZPPFV-UHFFFAOYSA-N 0.000 claims 1
- 239000004065 semiconductor Substances 0.000 abstract description 6
- 230000000052 comparative effect Effects 0.000 description 47
- 229910045601 alloy Inorganic materials 0.000 description 27
- 239000000956 alloy Substances 0.000 description 27
- 230000015572 biosynthetic process Effects 0.000 description 21
- 230000000694 effects Effects 0.000 description 20
- 238000011156 evaluation Methods 0.000 description 16
- 238000000034 method Methods 0.000 description 13
- 230000002411 adverse Effects 0.000 description 12
- 239000000758 substrate Substances 0.000 description 9
- 238000002788 crimping Methods 0.000 description 8
- 238000002844 melting Methods 0.000 description 7
- 230000008018 melting Effects 0.000 description 7
- 239000011347 resin Substances 0.000 description 7
- 229920005989 resin Polymers 0.000 description 7
- 229910052782 aluminium Inorganic materials 0.000 description 6
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 6
- 238000010438 heat treatment Methods 0.000 description 6
- 238000002156 mixing Methods 0.000 description 6
- 238000000137 annealing Methods 0.000 description 5
- 229910052797 bismuth Inorganic materials 0.000 description 5
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 5
- 238000005304 joining Methods 0.000 description 5
- 238000005259 measurement Methods 0.000 description 5
- 238000005491 wire drawing Methods 0.000 description 5
- 230000003993 interaction Effects 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 238000000691 measurement method Methods 0.000 description 3
- 239000011800 void material Substances 0.000 description 3
- 229910052769 Ytterbium Inorganic materials 0.000 description 2
- 238000005097 cold rolling Methods 0.000 description 2
- 238000013329 compounding Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 238000004626 scanning electron microscopy Methods 0.000 description 2
- 230000001568 sexual effect Effects 0.000 description 2
- 239000007790 solid phase Substances 0.000 description 2
- 229910052712 strontium Inorganic materials 0.000 description 2
- CIOAGBVUUVVLOB-UHFFFAOYSA-N strontium atom Chemical compound [Sr] CIOAGBVUUVVLOB-UHFFFAOYSA-N 0.000 description 2
- NAWDYIZEMPQZHO-UHFFFAOYSA-N ytterbium Chemical compound [Yb] NAWDYIZEMPQZHO-UHFFFAOYSA-N 0.000 description 2
- 238000004220 aggregation Methods 0.000 description 1
- 230000002776 aggregation Effects 0.000 description 1
- 238000005275 alloying Methods 0.000 description 1
- 229910052790 beryllium Inorganic materials 0.000 description 1
- ATBAMAFKBVZNFJ-UHFFFAOYSA-N beryllium atom Chemical compound [Be] ATBAMAFKBVZNFJ-UHFFFAOYSA-N 0.000 description 1
- 238000005266 casting Methods 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 230000002596 correlated effect Effects 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 210000003298 dental enamel Anatomy 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 238000011978 dissolution method Methods 0.000 description 1
- 230000005489 elastic deformation Effects 0.000 description 1
- 238000007772 electroless plating Methods 0.000 description 1
- 230000004927 fusion Effects 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 238000003780 insertion Methods 0.000 description 1
- 230000037431 insertion Effects 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 238000000399 optical microscopy Methods 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 238000003672 processing method Methods 0.000 description 1
- 229910052761 rare earth metal Inorganic materials 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
- 238000009864 tensile test Methods 0.000 description 1
- 235000013619 trace mineral Nutrition 0.000 description 1
- 239000011573 trace mineral Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L24/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C5/00—Alloys based on noble metals
- C22C5/02—Alloys based on gold
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/42—Wire connectors; Manufacturing methods related thereto
- H01L24/43—Manufacturing methods
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/42—Wire connectors; Manufacturing methods related thereto
- H01L24/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L24/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
- H01L2224/0554—External layer
- H01L2224/05599—Material
- H01L2224/056—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/05617—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
- H01L2224/05624—Aluminium [Al] as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/43—Manufacturing methods
- H01L2224/432—Mechanical processes
- H01L2224/4321—Pulling
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/43—Manufacturing methods
- H01L2224/438—Post-treatment of the connector
- H01L2224/43848—Thermal treatments, e.g. annealing, controlled cooling
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/4501—Shape
- H01L2224/45012—Cross-sectional shape
- H01L2224/45015—Cross-sectional shape being circular
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45139—Silver (Ag) as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45144—Gold (Au) as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
- H01L2224/4845—Details of ball bonds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
- H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
- H01L2224/48465—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/485—Material
- H01L2224/48505—Material at the bonding interface
- H01L2224/48599—Principal constituent of the connecting portion of the wire connector being Gold (Au)
- H01L2224/486—Principal constituent of the connecting portion of the wire connector being Gold (Au) with a principal constituent of the bonding area being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/48617—Principal constituent of the connecting portion of the wire connector being Gold (Au) with a principal constituent of the bonding area being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950 °C
- H01L2224/48624—Aluminium (Al) as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/485—Material
- H01L2224/48505—Material at the bonding interface
- H01L2224/48599—Principal constituent of the connecting portion of the wire connector being Gold (Au)
- H01L2224/486—Principal constituent of the connecting portion of the wire connector being Gold (Au) with a principal constituent of the bonding area being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/48638—Principal constituent of the connecting portion of the wire connector being Gold (Au) with a principal constituent of the bonding area being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/48639—Silver (Ag) as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/485—Material
- H01L2224/48505—Material at the bonding interface
- H01L2224/48599—Principal constituent of the connecting portion of the wire connector being Gold (Au)
- H01L2224/486—Principal constituent of the connecting portion of the wire connector being Gold (Au) with a principal constituent of the bonding area being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/48638—Principal constituent of the connecting portion of the wire connector being Gold (Au) with a principal constituent of the bonding area being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/48644—Gold (Au) as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/485—Material
- H01L2224/48505—Material at the bonding interface
- H01L2224/48599—Principal constituent of the connecting portion of the wire connector being Gold (Au)
- H01L2224/486—Principal constituent of the connecting portion of the wire connector being Gold (Au) with a principal constituent of the bonding area being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/48663—Principal constituent of the connecting portion of the wire connector being Gold (Au) with a principal constituent of the bonding area being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than 1550°C
- H01L2224/48664—Palladium (Pd) as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
- H01L2224/78—Apparatus for connecting with wire connectors
- H01L2224/7825—Means for applying energy, e.g. heating means
- H01L2224/783—Means for applying energy, e.g. heating means by means of pressure
- H01L2224/78301—Capillary
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
- H01L2224/78—Apparatus for connecting with wire connectors
- H01L2224/7855—Mechanical means, e.g. for severing, pressing, stamping
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
- H01L2224/85009—Pre-treatment of the connector or the bonding area
- H01L2224/8503—Reshaping, e.g. forming the ball or the wedge of the wire connector
- H01L2224/85035—Reshaping, e.g. forming the ball or the wedge of the wire connector by heating means, e.g. "free-air-ball"
- H01L2224/85045—Reshaping, e.g. forming the ball or the wedge of the wire connector by heating means, e.g. "free-air-ball" using a corona discharge, e.g. electronic flame off [EFO]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
- H01L2224/85009—Pre-treatment of the connector or the bonding area
- H01L2224/85048—Thermal treatments, e.g. annealing, controlled pre-heating or pre-cooling
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
- H01L2224/8512—Aligning
- H01L2224/85148—Aligning involving movement of a part of the bonding apparatus
- H01L2224/85169—Aligning involving movement of a part of the bonding apparatus being the upper part of the bonding apparatus, i.e. bonding head, e.g. capillary or wedge
- H01L2224/8518—Translational movements
- H01L2224/85181—Translational movements connecting first on the semiconductor or solid-state body, i.e. on-chip, regular stitch
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
- H01L2224/852—Applying energy for connecting
- H01L2224/85201—Compression bonding
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
- H01L2224/852—Applying energy for connecting
- H01L2224/85201—Compression bonding
- H01L2224/85203—Thermocompression bonding
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
- H01L2224/852—Applying energy for connecting
- H01L2224/85201—Compression bonding
- H01L2224/85205—Ultrasonic bonding
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
- H01L2224/8538—Bonding interfaces outside the semiconductor or solid-state body
- H01L2224/85399—Material
- H01L2224/854—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/85438—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/85439—Silver (Ag) as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
- H01L2224/8538—Bonding interfaces outside the semiconductor or solid-state body
- H01L2224/85399—Material
- H01L2224/854—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/85438—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/85444—Gold (Au) as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
- H01L2224/8538—Bonding interfaces outside the semiconductor or solid-state body
- H01L2224/85399—Material
- H01L2224/854—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/85463—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than 1550°C
- H01L2224/85464—Palladium (Pd) as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
- H01L2224/859—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector involving monitoring, e.g. feedback loop
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/42—Wire connectors; Manufacturing methods related thereto
- H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L24/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies
- H01L24/78—Apparatus for connecting with wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/00011—Not relevant to the scope of the group, the symbol of which is combined with the symbol of this group
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01005—Boron [B]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01012—Magnesium [Mg]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01014—Silicon [Si]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/0102—Calcium [Ca]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01027—Cobalt [Co]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01033—Arsenic [As]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01046—Palladium [Pd]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01047—Silver [Ag]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01057—Lanthanum [La]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01063—Europium [Eu]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01078—Platinum [Pt]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01079—Gold [Au]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01082—Lead [Pb]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01087—Francium [Fr]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/011—Groups of the periodic table
- H01L2924/01105—Rare earth metals
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/012—Semiconductor purity grades
- H01L2924/01203—3N purity grades, i.e. 99.9%
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/012—Semiconductor purity grades
- H01L2924/01204—4N purity grades, i.e. 99.99%
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/102—Material of the semiconductor or solid state bodies
- H01L2924/1025—Semiconducting materials
- H01L2924/10251—Elemental semiconductors, i.e. Group IV
- H01L2924/10253—Silicon [Si]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/14—Integrated circuits
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/20—Parameters
- H01L2924/207—Diameter ranges
- H01L2924/20752—Diameter ranges larger or equal to 20 microns less than 30 microns
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Wire Bonding (AREA)
- Electric Connection Of Electric Components To Printed Circuits (AREA)
Description
本發明係有關銲球接合用金合金線,與接合線伸長率4%時的拉伸試驗之裂斷載荷(以下稱為接合線強度)優越,於形成熔融銲球之際的熔融銲球表面上較少有由於氧化物引起的污垢或空洞,熔融形成的銲球形狀之穩定性(以下稱為「熔融銲球」形成性)優越,銲球壓接已熔融形成的銲球時之壓接銲球形狀的真圓性(以下稱為壓接銲球形狀的真圓性)優越,藉由毛細管頂壓接合線至引導框架(lead frame)或基板等並予接合的針腳式接合性(stitch bonding;以下稱為針腳式接合性)優越的金合金線。
於連接IC晶片之電極與外部配線時,採用介經接合線配線的接合線接合的方法係為人所知的。其中作為接合IC晶片之Al電極及接合線的方式,以超音波並用熱壓接及超音波接合佔有主流。因此,超音波並用熱壓接通常係利用銲球接合方法予以進行著。採用後述的專利文獻(日本專利第3657087號公報)所示的圖面說明利用銲球接合方法的接合法。
如圖1(a)所示般,接合線2細通過毛細管壓接工具1(capillary;以下稱「毛細管」)的接合線插通孔而由毛細管尖端部的細孔被送出,使電氣火炬3與該尖端對向,藉由使於與接合線2之間放電,加熱、熔融接合線2之尖端,形成銲球4。
接著,如圖1(b)所示般,使毛細管1下降並予壓接(第一
次接合)該銲球4至IC晶片6上的Al電極5之上。此時雖未予圖示,但超音波振動通過毛細管1予以附加的同時,IC晶片6由於受加熱塊加熱,故上述銲球4經予熱壓接而形成銲球4’。
其後,如圖1(c)所示般,毛細管1係描繪指定的軌跡,移動於引導框架之外部配線8的上面並下降。此時雖未予圖示,但超音波振動通過毛細管1予以附加,外部配線8由於受加熱塊加熱,故接合線2側面係經予熱壓接(稱作針腳式接合)。
其後,如圖1(d)所示般,藉由挾持器7在保持挾持著接合線2的狀態下上升,接合線2經予切斷而結束配線。
通常銲球接合用金合金線,於接合線強度、熔融銲球形成性、壓接銲球形狀之真圓性、針腳式接合性係需能耐實用。此外,通常的銲球接合線之伸長率雖然係予設定成2~6%,但若考慮環狀(loop)形成性時,伸長率以於3%為宜,以於4%為更宜。
另一方面,作為楔形接合(wedge bonding)用金合金線,於專利文獻1,已予開發著高純度金內添加鈣(Ca)1~100質量ppm的金合金線,以該金合金線之金純度99.9質量%以上,抗拉強度33.0kg/mm2
以上,伸長率1~3%為特徵的金合金線。此金合金線係高溫的接合強度優越,較適合作為IC晶片之高密度配線,藉由楔形接合予以接合。藉由楔形接合的接合部,如第2圖(b)所示般係具有崩散寬度為可予控制的接合線直徑之1.5~2.5倍的特徵。
但是,若欲利用此金合金線作為銲球接合線時,壓接銲球形狀
的真圓性會變差,所以未能進行穩定的銲球接合。再者,伸長率較低,故較難描繪出弧形形狀,弧形形成性變差。因此用途則予限定於楔形接合,被限定於對象的半導體裝置之範圍。
專利文獻1:日本專利第3657087號公報
專利文獻2:日本專利特開平10-4114號公報
有鑑於上述問題點,本發明之目的係提供與楔形接合用金合金線相同的接合線強度優越的金合金線,且熔融銲球形成性及壓接銲球形狀的真圓性優越,再者可對應於針腳式接合性優越的半導體裝置之高密度配線的金合金線。
本發明人等,對接合線強度優越的金合金線,經精心研究的結果,若鈣(Ca)為銪(Eu)及鑭(La)合計的質量以下時,且釔(Y)為銪(Eu)及鑭(La)合計的質量以下時,則於指定範圍之Ca-Mg-Eu-La-Y的微量添加元素系而成之金合金,發現於接合線強度及熔融銲球形成性及壓接銲球形狀的真圓性方面可發揮優越的效果,以至完成本發明。
具體而言,若依本發明時,則可予提供以由鎂(Mg)15~50質量ppm、銪(Eu)5~20質量ppm、鑭(La)5~20質量ppm、釔(Y)5~20質量ppm、鈣(Ca)10~30質量ppm、及餘量為之金(Au)而成的金合金為特徵的銲球接合用金合金線接合線。
又,若依本發明時,則可予提供以由鎂(Mg)15~50質量
ppm、銪(Eu)5~20質量ppm、鑭(La)5~20質量ppm、釔(Y)5~20質量ppm、(Ca)10~30質量ppm、及餘量為金(Au)而成的金合金為特徵的銲球接合用金合金線接合線。其中鈣(Ca)之添加量為銪(Eu)及鑭(La)合計的添加量以下之質量時,或釔(Y)之添加量為鈣(Ca)及銪(Eu)合計的添加量以下之質量。
再者,若依本發明時,則可予提供以由鎂(Mg)15~50質量ppm、銪(Eu)5~20質量ppm、鑭(La)5~20質量ppm、釔(Y)5~20質量ppm、(Ca)10~30質量ppm、及餘量為金(Au)而成的金合金為特徵的銲球接合用金合金線接合線。
其中鈣(Ca)之添加量為銪(Eu)及鑭(La)合計的添加量以下之質量,且釔(Y)之添加量為鈣(Ca)及銪(Eu)合計的添加量以下之質量。
於適當的實施態樣,係添加微量的添加元素鎂(Mg)20~40質量ppm。
此外,於適當的實施態樣,係金之純度為99.98質量%以上的銲球接合用金合金線。
於較適當的實施態樣,係金之純度為99.99質量%以上的銲球接合用金合金線。
本發明之銲球接合用金合金線,作為由指定範圍之Ca-Mg-Eu-La-Y的微量添加元素系而成的金合金,可發揮接合線強度、針腳式接合性、壓接銲球形狀之真圓性及熔融銲球形成性優越的
效果。尤其,具有可同時達成接合線強度、針腳式接合性及壓接銲球形狀之真圓性的特性。
於本發明,微量添加元素之種類較少,成分範圍狹窄而受限制的。又,本發明之微量添加元素的配合比若失去配衡時,則因會對接合線強度、針腳式接合性、壓接銲球形狀之真圓性或熔融銲球形成性有惡劣影響的顧慮,所以以採用金(Au)之純度儘可能高純度者為佳。此外,於本發明之合金系,金以外的微量添加元素及雜質元素之合計若為未滿100質量ppm時,則因可表示作純度99.99質量%以上之高純度金接合線,故於商業上係較有利的。
接合線之針腳式接合,係予分類於固相接合。至於對固相接合有良好的影響之現象,由於形成密著部,而較易變形,於密著部之結合強度係較高的,乃為眾所週知的。
由於形成密著部,而較易變形,係意指較易形成彈性變形,塑性變形、潛變變形、由於擴散而引起的變形等。此種現象,於針腳式接合方面,亦係相同的。至於接合線之情形,由於可被視作接合線強度愈低,則愈由於形成密著部,而較易變形,因此於接合線強度與針腳式接合性方面有負相關的關係存在。
另一方面,於密著部之結合強度,則係歸因於化學鍵結強度、凝聚、表面粗糙度、表面狀態等各種現象。然而,通常的銲球接合
用金合金線,其結合強度原本較其他的金屬接合線亦較高。此係,組成自純度99質量%至純度99.99質量%以上,以於大氣中幾乎不氧化的金所構成的。因此,可被視作於接合線表面上存在的添加元素或添加元素之氧化物引起的惡劣影響愈少,則愈可得密著部之結合強度較高的金合金線。
採用純度99.99質量%以上的高純度金,在添加元素完全不添加下,若製作銲球接合用金線時,則因接合線較柔軟,由較易因形成密著部而引起變形,及較無於接合線表面上存在的添加元素或添加元素之氧化物引起的惡劣影響,所以可被視作針腳式接合性最優越的接合線。但是,接合線被同時要求有多數的機能,例如,若無一訂程度以上的接合線強度時,則會發生樹脂模塑成形時的接合線流動,或環狀形成性低劣等的實用上問題。結果,為使接合線強度提高,則有採用微量添加元素之必要。本發明所用的所有微量添加元素,係與對密著部之結合強度的影響有關,即使與純金比較亦不阻礙針腳式接合性的元素。此外,需以指定的配合比使用本發明之微量添加元素,於提高接合線強度方面亦有效的。且,於接合線表面上存在的添加元素之氧化物,可被視作在最後拉線加工後所施加的熔點之3成~6成左右的溫度進行的退火處理而得的。在惰性氣圍進行退火處理,或退火處理後以化學方式洗淨接合線表面,雖然可被視作能減少接合線表面之氧化物,但是在成本方面,製造上有困難,以本發明之方法較具實用性。
熔融銲球,係指於大氣中濺散火花使接合線之尖端熔融而得的銲球。至於若干種的添加元素,添加量若變多時,則於銲球全面或銲球與接合線之境界(稱作頸部;neck)部分上被確認有添加元素之氧化物。此外,視情況而異,亦有於銲球底邊會發生空洞。接合線之性能上,以熔融銲球形成性係較重要的,乃被要求極力減少氧化物或空洞。以指定的配合比使用本發明之微量添加元素係可得具有實用性,能耐此等要求的熔融銲球形成性。
藉由半導體裝置之高密度實際裝配,可使IC晶片上的鋁電極之間隔及面積狹小化。間隔及面積已狹小化的鋁電極上,為防止接合之際相鄰的壓接銲球相互間的接觸,提高壓接銲球形狀的真圓性,即成為不可欠缺的。對壓接銲球形狀的真圓性,添加元素之配合比的影響較大,由於配合比之配衡潰散,使熔融銲球壓接之際的變形成為不均勻,變成不能保持壓接銲球形狀的真圓性。再者,壓接銲球形狀的真圓性,與針腳式接合性同樣的與接合線強度有負相關的傾向。以指定的配合比使用本發明之微量添加元素,使能耐實用性之壓接銲球形狀的真圓性與接合線強度間的並存可予達成。
於本發明之合金系,鎂(Mg)係壓接銲球形狀的真圓性方面最具效果之元素。
於本發明之合金系,鎂(Mg)係接合線強度方面不甚具效果的添加元素。於本發明之合金系,鎂(Mg)係需要15質量ppm以上。若未滿此值時,則壓接銲球形狀的真圓性並無效果。於本發明之合金系,為使壓接銲球形狀的真圓性穩定,以鎂(Mg)在20質量ppm以上為宜。另一方面,於本發明之合金系,鎂(Mg)即使超過50質量ppm而變成過多,對熔融形成的銲球形狀之穩定性(以下稱為熔融銲球形成性)有惡劣影響。於本發明之合金系,為得良好的熔融銲球形成性,鎂(Mg)以於40質量ppm以下為宜。
於本發明之合金系,銪(Eu)及鑭(La)雖然係對接合線之接合線強度有效的元素,但是並無後述之鈣(Ca)般的效果。此外,於本發明之合金系,銪(Eu)及鑭(La)雖然係對壓接銲球形狀的真圓性有效的元素,但是並無鎂(Mg)般的效果。於本發明之合金系,銪(Eu)及鑭(La)係需要5質量ppm以上。若未滿此值時,則壓接銲球形狀的真圓性及接合線強度並無效果。於本發明之合金系,銪(Eu)及鑭(La)若超過20質量ppm時,則對熔融銲球形成性有惡劣影響。
於本發明之合金系,鈣(Ca)係對接合線之接合線強度最具效果的元素。然而,鈣(Ca)亦為對壓接銲球形狀的真圓性有惡劣影響之元素。因此,於本發明之合金系,鈣(Ca)之有效的組
成範圍係予限定於非常狹窄的範圍內。鈣(Ca)僅於此範圍內,始於本發明之合金系發揮效果。於本發明之合金系,鈣(Ca)未滿10質量ppm時,於接合線強度方面並無效果,若超過30質量ppm時,則對則對熔融銲球形成性有惡劣影響。
[Y]
於本發明之合金系,釔(Y)係對接合線強度方面有效的微量添加元素。但是,於本發明之合金系的釔(Y),係與鈣(Ca)同樣的對壓接直徑之真圓性有惡劣影響的元素。釔(Y)雖然係任意的添加元素,但是於本發明之合金系,釔(Y)為發揮上述效果,係需要5質量ppm以上。若未滿此值時,則與未添加釔(Y)的情形相同所致。另一分面,於本發明之合金系,釔(Y)若超過20質量ppm時,則對壓接銲球形狀的真圓性有惡劣影響。
[Eu+La+Ca]
於本發明之合金系,銪(Eu)及鑭(La)係紴視作與鈣(Ca)有相互作用的。亦即,銪(Eu)、鑭(La)及鈣(Ca),不論何者均係對接合線強度方面有效的微量添加元素。但是藉由同時添加此等的微量添加元素之相乗效果,可再有使接合線強度提高的效果。
[Ca]≦[Eu]+[La]
於本發明之合金系,鈣(Ca)雖然係對壓接銲球形狀的真圓性有惡劣影響的元素,但是藉由銪(Eu)及鑭(La)之同時添加,
(Eu)及鑭(La)時,則各自成為緩衝材,被認為亦較單獨微量添加的情形,可減緩由於鈣(Ca)對壓接銲球形狀的真圓性引起的惡劣影響。
釔(Y)雖然顯示出與鈣(Ca)類似的添加效果,但是亦較鈣(Ca)對壓接直徑之真圓性有惡劣影響的元素。尤其,若釔(Y)之添加量較鈣(Ca)及銪(Eu)同時添加量為多時,則對壓接銲球形狀的真圓性有較強的惡劣影響。然而,若同時添加鈣(Ca)及銪(Eu)時,則各自成為緩衝材,有減緩由於釔(Y)對壓接銲球形狀的真圓性引起之惡劣影響的效果。因此,釔(Y)亦有較鈣(Ca)及銪(Eu)之合計添加量減少的必要。
(1)接合線強度
關於伸長率成為4%時的接合線強度,採用與習用者相同的測定方法評估本發明之合金。且,伸長率係於室溫,以100mm作為標點距離,利用拉伸試驗機以拉伸速度10mm/分拉伸金合金線,將裂斷時的伸長量帶入下式予以求得。
判定時,係藉由最終熱處理將ψ 25 μm的接合線調整伸長率成4.0%,採用測定數5根的平均值作為測定值,以該值較高的試料為良好。具體而言,對接合線強度12.5g(122.5mN)以上者以◎記號表示,對接合線強度未滿12.5g(122.5mN)~11.5g(112.7mN)以上者以○記號表示,對接合線強度未滿11.5g(112.7mN)~11.0g
(107.8mN)以上者以△記號表示,對接合線強度未滿11.0g(107.8mN)以上者以×記號表示。
(2)熔融銲球形成性
熔融銲球形成性,係藉由普通的掃描電子顯微鏡觀察、光學顯微鏡觀察,可予容易的確認。
於本發明,係以側定數10個予以判定,藉由掃描電子顯微鏡觀察由於全面的氧化物引起的污垢或空洞,對經予確認有6個以上的試料,予以判定成×,對經予確認有5個~3個上的試料,予以判定成△,對經予確認有2個以下的試料,予以判定成○。
(3)針腳式接合性
針腳式接合,係指介經毛細管對接合線邊予施加載荷.超音波等.邊予頂壓並使變形,使其接合至藉由Ag、Au、Pd等予以電鍍處理的框架或基板上。關於針腳式接合性,本發明之金合金係與習用的金合金同樣的,可使針腳式接合性較高的維持。
本發明之測定方法,係採用經予無電解電鍍的FR-4樹脂基板,予第三圖所示般,測定位置以壓接銲球直徑之中心部為0%,針腳式接合部為100%時,於90%的針腳式接合部附近進行。測定方法,係採用恰於接合後的試料,以夾具固定IC晶片側及樹脂基板,於上方拉伸接合線,測定剝離強度。判定係以側定數30個
之平均值作為測定值,以測定值較高的試料為良好。具體而言,對剝離強度6.0g以上者以◎記號表示,對剝離強度未滿6.0~g4.5g以上者以○記號表示,對剝離強度未滿4.5g~3.0g以上者以△記號表示,對剝離強度未滿3.0g者以×表示。
(4)壓接銲球形狀之真圓性
壓接銲球形狀之真圓性的評估,係對矽(Si)晶片上之鋁(Al)電極(鋁(Al)膜厚度:約7x10-8
m)以壓接銲球直徑大致成為63 μm的條件進行球形壓接(ball bonding),其後於與經予鍍金的FR-4樹脂基板之間進行針腳式接合,用球形壓接法予以結線。於該時,跨距(span)係3×10-3
m,腳數為200根,由已結線的接合線之中採用任意的50個壓接銲球予以評估壓接銲球形狀之真圓性。測定與超音波之施加方向平行的方向之壓接直徑及與超音波之施加方向垂直的方向之壓接直徑,以合計50個壓接銲球之標率偏差較低的試料作為良好。具體而言,對標準偏差未滿0.8 μm者以◎記號表示,對標準偏差0.8 μm以上~未滿1.2 μm者以○記號表示,對標準偏差1.2 μm以上~未滿1.5 μm者以△記號表示,對標準偏差1.5 μm以上者以×表示。
(5)金合金線之製造方法
說明與本發明有關的金合金線之較宜的製造方法。於高純度金內添加指定量之元素,於真空熔解爐內熔解後,鑄造而得金合金晶錠。將該晶錠置入帶槽軋輥進行軋輥加工,採用拉線機進行
冷軋加工及中間退火,進行最終拉線加工成最終線徑25 μm,藉由最終熱處理予以加工成伸長率4%。
純度99.999質量%以上的金線,可被視作接合線強度低,接合線強度亦經時降低。因此,紴使用作接合線的金合金線,添加指定量的各自任意的添加元素,接合線強度亦較99.999質量%以上的金線者被提高著。正予市售的大多數接合線,雖然係予添加著鈹(Be)、鈣(Ca)等若干種稀土類元素,但是此等添加元素係具有接合線強度提高效果。
另一方面,接合線所被要求的針腳式接合性,若接合線強度變高時,則較難成為由於形成前述的密著部而引起的變形,此外,為提高接合線強度,增加所添加的添加元素,會使於密著部之結合強度變低,使針腳式接合性惡化。於本發明,隨著添加元素之種類而異,可使接合線強度提高,同時對密著部之結合強度較少惡劣影響,特定出若干種較難使針腳式接合性惡化的添加元素,發現鈣(Ca)與銪(Eu)及鑭(La)及釔(Y)係最適當的添加元素,同時經予添加此等添加元素時,會更提高接合線強度。
但是,通常的接合線,除接合線強度、針腳式接合性外,亦被要求著壓接銲球形狀之真圓性。然而,通常若接合線強度變高時,則被認定較難較難確保壓接銲球形狀之真圓性,於本發明之合金系方面,以採用對接合線強度較少影響的鎂(Mg),即可確保壓接銲球形狀之真圓性。
但是,至於接合線強度及針腳式接合性優越的上述鈣(Ca)與銪(Eu)及鑭(La)及釔(Y),即使為採用鎂(Mg)的合金系,對不考慮添加量與使接合線強度提高的其他的添加元素間的相互作用的情形,可查明何以未能改良針腳式接合性。
因此,於本發明之合金系的鈣(Ca),係邊考慮添加量與使接合線強度提高的其他的添加元素間的相互作用,邊予配合,結果著眼於鈣(Ca)與銪(Eu)及鑭(La)間的配合比,保持可使壓接銲球形狀之真圓性提高的效果,同時成功的改良針腳式接合性及接合線強度。具體而言,於本發明之合金系,鈣(Ca)係於接合線之接合線強度方面亦較銪(Eu)及鑭(La)更有效。因此,以對接合線之接合線強度有影響的鈣(Ca)之影響作為從屬,以銪(Eu)及鑭(La)之影響為主,故鈣(Ca)為銪(Eu)及鑭(La)之和以下的質量。
再者,於本發明之合金系的釔(Y),係邊考慮添加量與使接合線強度提高的其他的添加元素間的相互作用,邊予配合,結果著眼於鈣(Ca)與銪(Eu)間的配合比,保持可使壓接銲球形狀之真圓性提高的效果,同時成功的改良針腳式接合性及接合線強度。具體而言,於本發明之合金系,釔(Y)係於接合線之接合線強度方面亦較銪(Eu)及鑭(La)更有效。但是,釔(Y)若予添加一定量以上時,則因為能維持使壓接銲球形狀之真圓性提高的效果,故釔(Y)為鈣(Ca)與銪(Eu))之和以下的質量。
就表1所示的習用例及實施例予以說明。
將專利文獻1(日本專利第3657087號公報)之實施例38表示作習用例2,專利文獻2(日本專利特開平10-4114號公報)之實施例14表示作習用例3。
於純度99.999質量%之高純度金內微量添加指定量之添加元素,於真空熔解爐內熔解後,鑄造而得表1左欄所示組成之金合金晶錠。將該晶錠置入帶槽軋輥進行軋輥加工,採用拉線機進行冷軋加工及中間退火,進行最終拉線加工成最終線徑25 μm,藉由最終熱處理予以加工成伸長率4%。
於實施例1~11,以請求項1所述的鎂(Mg)15~50質量ppm、鈣(Ca)10~30質量ppm、銪(Eu)5~20質量ppm、釔(Y)5~20質量ppm、鑭(La)5~20質量ppm之添加元素範圍為標準,以滿足標準的範圍使添加量或多或少的變化。
相對於此,比較例1~10係對各自的元素以少許不滿足標準的範圍使添加量或多或少的變化。
金合金線,係採用球形壓接裝置(株式會社新川製造UTC1000型)予以壓接銲球並接合至IC晶片之鋁電極上,進行針
腳式接合至經予電鍍的FR-4樹脂基板上。此時IC晶片側之接合條件,係以載荷3.0×1.0×10-3
N(30gf)、接合時間12毫秒、超音波輸出功率300(mW)。另一方面,FR-4樹脂基板側之接合條件,係以載荷4.3×1.0×10-3
N(43gf)、接合時間12毫秒、超音波輸出功率400(mW)。共通的接合條件之接合溫度,係假設低溫接合並於140℃進行,毛細管則使用日本SPT株式會社製造的SBNS-33CD-AZM-1/16-XL。
其次採用恰於接合後的試料,由鋁電極上測定壓接銲球形狀之真圓性,由FR-4樹脂基板附近的接合線剝離強度測定針腳式接合性。測定結果係表示於表1右欄。
由表1之測定結果可知下述事情。
(1)習用例1~3係,不論何者壓接銲球形狀之真圓性均低劣,未能得能耐實用性的結果。此外,習用例3接合線強度亦低,未能得能耐實用性的結果。
且,習用例1,係未予添加鑭(La)(表中*記號),此外,不
滿足[Ca]≦[Eu]+[La]。習用例2,係未予添加銪(Eu)(表中*記號),此外,不滿足[Y]≦[Ca]+[Eu]。習用例3,係未予添加鑭(La)及釔(Y)(表中*記號),此外,不滿足[Ca]≦[Eu]+[La]。此等係紴視作未能得能耐實用性的結果的原因。
(2)實施例1~11係,所有接合線強度在良好的範圍,可得如同所期待的特性。此外,所有針腳式接合性係穩定的,不論何者均可得能耐實用性的滿意結果。於藉由掃描電子顯微鏡觀察的觀察,完全甚少有由於全面的氧化物引起的污垢或空洞,熔融銲球形成性係不論何者均可得能耐實用性的滿意結果。再者,所有的壓接銲球形狀之真圓性係良好的,不論何者均可得能耐實用性的滿意結果。因此,實施例1~11係,於所有的評估項目,即成為均可得能耐實用性的滿意結果。且,實施例1~11係,滿足所有請求項1所述的添加元素範圍,再者滿足[Ca]≦[Eu]+[La]及[Y]≦[Ca]+[Eu]。此等係紴視作不論何者均可得能耐實用性令人滿人的結果的原因。
(3)比較例1~10係,不論何者於接合線強度或針腳式接合性或熔融銲球形成性或壓接銲球形狀之真圓性之評估方面,均未能得能耐1個以上實用性的結果。且,比較例1~10係,不論何者均不各自一個滿足請求項1所述的添加元素範圍(表中*記號),再者,由於比較例亦未滿足[Ca]≦[Eu]+[La]及[Y]≦[Ca]+[Eu]。
因此,此等係紴視作未能得能耐實用性的結果的原因。
且較具體而言,比較例1係鎂(Mg)添加量不滿足下限值。結果,關於壓接銲球形狀之真圓性方面,未能得能耐實用性的結果。比較例2係鎂(Mg)添加量不滿足上限值。結果,關於熔融銲球形成性方面,未能得能耐實用性的結果。比較例3係銪(Eu)添加量不滿足下限值,且未滿足[Ca]≦[Eu]+[La]。結果,關於壓接銲球形狀之真圓性方面,未能得能耐實用性的結果。比較例4係銪(Eu)添加量不滿足上限值。結果,關於熔融銲球形成性方面,未能得能耐實用性的結果。比較例5係鑭(La)添加量不滿足下限值,且未滿足[Ca]≦[Eu]+[La]。結果,關於壓接銲球形狀之真圓性方面,未能得能耐實用性的結果。比較例6係鑭(La)添加量不滿足上限值。結果,關於熔融銲球形成性方面,未能得能耐實用性的結果。比較例7係釔(Y)不滿足下限值。結果,關於接合線強度方面,未能得能耐實用性的結果。比較例8係釔(Y)不滿足上限值。結果,關於針腳式接合性及熔融銲球形成性方面,未能得能耐實用性的結果。比較例9係鈣(Ca)不滿足下限值。結果,關於接合線強度方面,未能得能耐實用性的結果。比較例10係鈣(Ca)不滿足上限值,且未滿足[Ca]≦[Eu]+[La]。結果,關於針腳式接合性及熔融銲球形成性方面,未能得能耐實用性的結果。
說明表2所示的實施例及比較例。
評估2係係採用與評估1相同的溶解方法及加工方法,使添加元素之添加比率變化而製作的接合線用之金合金線。且,評估方法方面,評估2係與評估1同法進行。
於評估2,係評估使鎂(Mg)、鈣(Ca)、銪(Eu)、釔(Y)、鑭(La)之5元素中的任意2元素予以變化添加量時的影響(合計20種組合)。2元素之中1元素,係依不滿足標準下限值的添加量、於標準內接近下限的添加量、於標準內接近上限的添加量、不滿足標準上限值的添加量之順序,使添加量變化。相對的,另一元素,係依不滿足標準上限值的添加量、於標準內接近上限的添加量、於標準內接近下限的添加量、不滿足標準下限值的添加量之順序,使添加量變化。且,以滿足標準者為實施例,以不滿足標準者為比較例。
例如,實施例1~2及比較例1~2,系選擇鎂(Mg)及銪(Eu)之2元素作為1組的元素。於此,鎂(Mg)係以15~50質量ppm、銪(Eu)以5~20質量ppm之請求項1所述的添加元素範圍作為標準。具體而言,鎂(Mg)係使依10質量ppm、18質量ppm、42質量ppm、58質量ppm之順序變化,銪(Eu)則依28質量ppm、18質量ppm、8質量ppm、2質量ppm之順序變化。於評估2,係如此使以標準內外變化2元素,與評估1同樣的進行接合性之評估。
同樣的以選擇鎂(Mg)及鑭(La)者,作為實施例3~4及以較例3~4,以選擇鎂(Mg)及釔(Y)者,作為實施例5~6及以較
例5~6,以選擇鎂(Mg)及鈣(Ca)者,作為實施例7~8及以較例7~8,以選擇銪(Eu)及鑭(La)者,作為實施例9~10及以較例9~10,以選擇銪(Eu)及釔(Y)者,作為實施例11~12及以較例11~12,以選擇銪(Eu)及鈣(Ca)者,作為實施例13~14及以較例13~14,以選擇鑭(La)及釔(Y)者,作為實施例15~16及以較例15~16,以選擇鑭(La)及鈣(Ca)者,作為實施例17~18及以較例17~18,以選擇釔(Y)及鈣(Ca)者,作為實施例19~20及以較例19~20。
且,各自的添加元素係鎂(Mg)以15~50質量ppm、鈣(Ca)以10~30質量ppm、銪(Eu)以5~20質量ppm、釔(Y)以5~20質量ppm、鑭(La)以5~20質量ppm之請求項1所述的添加元素範圍作為標率。
表2
由表2之測定結果可知下述事情。
(1)實施例1~20係,所有的接合線強度於良好的範圍,可得目的特性。此外,所有的針腳式接合性係穩定的,不論何者均可得能耐實用性的結果。於藉由掃描電子顯微鏡觀察的觀察,完全甚少有由於全面的氧化物引起的污垢或空洞,熔融銲球形成性係不論何者均可得能耐實用性的滿意結果。再者,所有的壓接銲球形狀之真圓性係良好的,不論何者均可得能耐實用性的滿意結果。因此,實施例1~20係,於所有的評估項目,即成為均可得能耐實用性的滿意結果。且,實施例1~20係,滿足所有請求項1所述的添加元素範圍,再者滿足[Ca]≦[Eu]+[La]及[Y]≦[Ca]+[Eu]。此等係紴視作不論何者均可得能耐實用性令人滿人的結果的原因。
(2)比較例1~20係,不論何者於接合線強度或針腳式接合性或熔融銲球形成性或壓接銲球形狀之真圓性之評估方面,均未能得能耐1個以上實用性的結果。且,比較例1~20係,不論何者均不各自滿足二個請求項1所述的添加元素範圍(表中*記號),再者,由於比較例亦未滿足[Ca]≦[Eu]+[La]及[Y]≦[Ca]+[Eu]。因此,此等係紴視作未能得能耐實用性的結果的原因。
且較具體而言,比較例1係鎂(Mg)添加量不滿足下限值,銪(Eu)添加量不滿足上限值。結果,關於壓接銲球形狀之真圓性方面,未能得能耐實用性的結果。比較例2係鎂(Mg)添加量不
滿足上限值,銪(Eu)添加量不滿足下限值,且未滿足[Ca]≦[Eu]+[La]。結果,關於熔融銲球形成性方面,未能得能耐實用性的結果。比較例3係鎂(Mg)添加量不滿足下限值,鑭(La)添加量不滿足上限值。結果,關於壓接銲球形狀之真圓性方面,未能得能耐實用性的結果。比較例4係鎂(Mg)添加量不滿足上限值,鑭(La)添加量不滿足下限值,且未滿足[Ca]≦[Eu]+[La]。結果,關於熔融銲球形成性方面,未能得能耐實用性的結果。比較例5係鎂(Mg)添加量不滿足下限值,釔(Y)添加量不滿足上限值。結果,關於壓接銲球形狀之真圓性方面,未能得能耐實用性的結果。比較例6係鎂(Mg)添加量不滿足上限值,釔(Y)添加量不滿足下限值。關於接合線強度及熔融銲球形成性方面,未能得能耐實用性的結果。比較例7係係鎂(Mg)添加量不滿足下限值,鈣(Ca)添加量不滿足上限值,且未滿足[Ca]≦[Eu]+[La]。結果,關於針腳式接合性及壓接銲球形狀之真圓性方面,未能得能耐實用性的結果。比較例8係鎂(Mg)添加量不滿足上限值,鈣(Ca)添加量不滿足下限值。結果,關於接合線強度及熔融銲球形成性及壓接銲球形狀之真圓性方面,未能得能耐實用性的結果。比較例9係銪(Eu)添加量不滿足上限值,鑭(La)添加量不滿足下限值。結果,關於壓接銲球形狀之真圓性方面,未能得能耐實用性的結果。比較例10係銪(Eu)添加量不滿足上限值,鑭(La)添加量不滿足上限值。結果,
關於壓接銲球形狀之真圓性方面,未能得能耐實用性的結果。比較例11係銪(Eu)添加量不滿足上限值,釔(Y)添加量不滿足下限值。結果,關於接合線強度方面,未能得能耐實用性的結果。比較例12係銪(Eu)添加量不滿足下限值,釔(Y)添加量不滿足上限值,且未滿足[Ca]≦[Eu]+[La]。結果,關於壓接銲球形狀之真圓性方面,未能得能耐實用性的結果。比較例13係銪(Eu)添加量不滿足上限值,鈣(Ca)添加量不滿足下限值。結果,關於壓接銲球形狀之真圓性及熔融銲球形成性方面,未能得能耐實用性的結果。比較例14係銪(Eu)添加量不滿足下限值,鈣(Ca)添加量不滿足上限值,且未滿足[Ca]≦[Eu]+[La]。結果,關於熔融銲球形成性及壓接銲球形狀之真圓性方面,未能得能耐實用性的結果。比較例15係鑭(La)添加量不滿足上限值,釔(Y)添加量不滿足下限值。結果,關於接合線強度及熔融銲球形成性方面,未能得能耐實用性的結果。比較例16係鑭(La)添加量不滿足下限值,釔(Y)添加量不滿足上限值,且未滿足[Ca]≦[Eu]+[La]。結果,關於壓接銲球形狀之真圓性方面,未能得能耐實用性的結果。比較例17係鑭(La)添加量不滿足上限值,鈣(Ca)添加量不滿足下限值。結果,關於接合線強度方面,未能得能耐實用性的結果。比較例18係鑭(La)添加量不滿足下限值,鈣(Ca)添加量不滿足上限值,且未滿足[Ca]≦[Eu]+[La]。結果,關於熔融銲球形成性及壓接銲球形狀之真圓性方面,未能得能耐實用性的
結果。比較例19係釔(Y)添加量不滿足下限值,鈣(Ca)添加量不滿足上限值,且未滿足[Ca]≦[Eu]+[La]。結果,關於熔融銲球形成性及壓接銲球形狀之真圓性方面,未能得能耐實用性的結果。比較例20係釔(Y)添加量不滿足上限值,鈣(Ca)添加量不滿足下限值,且未滿足[Y]≦[Ca]+[Eu]。結果,關於接合線強度及壓接銲球形狀之真圓性方面,未能得能耐實用性的結果。
若依本發明之銲球接合用金合金線時,則雖然為由指定範圍之Ca-Mg-Eu-La-Y的微量添加元素系而成之金合金,但是可發揮接合線強度及針腳式接合性及壓接銲球形狀的真圓性及熔融銲球形成性優越的效果,提高半導體裝置之生產性方面係有效的。尤其,可同時達成接合線強度及針腳式接合性及壓接銲球形狀的真圓性,於狹窄節距進行高密度配線的銲球接合可被說是有困難的,而且,針腳式接合可被說是有困難的採用無電解鍍金的BGA(ball grid array;球狀柵極陣列封裝體)低溫封裝體之實際裝配等方面,於提高半導體裝置製作的生產性係有效的。
1‧‧‧毛細管
2‧‧‧接合線
3‧‧‧電氣火炬
4‧‧‧銲球
4’‧‧‧壓接銲球
5‧‧‧Al電極
6‧‧‧IC晶片
7‧‧‧挾持器
8‧‧‧外部配線
D‧‧‧接合線直徑
L1‧‧‧壓接銲球直徑
L2‧‧‧崩散寬度
第一圖係供說明銲球壓接方法之接合法而用的模式圖。其中,(a)係表示於接合線尖端上形成接合用銲球的步驟;(b)係表示將已形成銲球的接合線壓接於IC晶片上之電極的步驟;(c)係表示接合於IC晶片上之電極後,將接合線朝向外部配線拉出並予接合的步驟;(d)係表示接合於外部配線後,自提拉接合線並
予接合至配線的位置,予以切斷的步驟。
第二圖(a)及(b)係各自表示銲球壓接方法及針腳式接合方法而得的接合部之形狀、尺度。
第三圖係供說明接合線之接合強度測定而用的模式圖。
1‧‧‧毛細管
2‧‧‧接合線
3‧‧‧電氣火炬
4‧‧‧銲球
4’‧‧‧壓接銲球
5‧‧‧Al電極
6‧‧‧IC晶片
7‧‧‧挾持器
8‧‧‧外部配線
Claims (12)
- 一種銲球接合用金合金線,其特徵在於由鎂(Mg)15~50質量ppm、鈣(Ca)10~30質量ppm、銪(Eu)5~20質量ppm、釔(Y)5~20質量ppm、鑭(La)5~20質量ppm、及餘量為純度99.998質量%以上之金(Au),含添加元素及雜質的金之純度99.99質量%以上而成者。
- 一種銲球接合用金合金線,其特徵在於由鎂(Mg)15~50質量ppm、鈣(Ca)10~30質量ppm、銪(Eu)5~20質量ppm、釔(Y)5~20質量ppm、鑭(La)5~20質量ppm、及餘量為純度99.998質量%以上之金(Au),含添加元素及雜質的金之純度99.98質量%以上而成者。
- 如請求項1所述的銲球接合用金合金線,其中鈣(Ca)之添加量為銪(Eu)及鑭(La)合計的添加量以下之質量,且釔(Y)之添加量為鈣(Ca)及銪(Eu)合計的添加量以下之質量,且鎂(Mg)為20~40質量ppm。
- 如請求項1所述的銲球接合用金合金線,其中鈣(Ca)之添加量為銪(Eu)及鑭(La)合計的添加量以下之質量,且鎂(Mg)為20~40質量ppm。
- 如請求項1所述的銲球接合用金合金線,其中鈣(Ca)之添加量為銪(Eu)及鑭(La)合計的添加量以下之質量,且釔(Y)之添加量為鈣(Ca)及銪(Eu)合計的添加量以下之質量。
- 如請求項1所述的銲球接合用金合金線,其中鈣(Ca)之添加量為銪(Eu)及鑭(La)合計的添加量以下之質量。
- 如請求項2所述的銲球接合用金合金線,其中鈣(Ca)之添加量為銪(Eu)及鑭(La)合計的添加量以下之質量,且釔(Y)之添加量為鈣(Ca)及銪(Eu)合計的添加量以下之質量,且鎂(Mg)為20~40質量ppm。
- 如請求項2所述的銲球接合用金合金線,其中鈣(Ca)之添加量為銪(Eu)及鑭(La)合計的添加量以下之質量,且鎂(Mg)為20~40質量ppm。
- 如請求項2所述的銲球接合用金合金線,其中鈣(Ca)之添加量為銪(Eu)及鑭(La)合計的添加量以下之質量,且釔(Y)之添加量為鈣(Ca)及銪(Eu)合計的添加量以下之質量。
- 如請求項2所述的銲球接合用金合金線,其中鈣(Ca)之添加量為銪(Eu)及鑭(La)合計的添加量以下之質量。
- 一種銲球接合用金合金線,其特徵在於由鎂(Mg)15~50質量ppm、鈣(Ca)10~30質量ppm、銪(Eu)5~20質量ppm、釔(Y)5~20質量ppm、鑭(La)5~20質量ppm、及餘量為純度99.995質量%以上之金(Au),含添加元素及雜質的金之純度99.99質量%以上而成者。
- 一種銲球接合用金合金線,其特徵在於由鎂(Mg)15~50質量ppm、鈣(Ca)10~30質量ppm、銪(Eu)5~20質量ppm、釔(Y) 5~20質量ppm、鑭(La)5~20質量ppm、及餘量為純度99.995質量%以上之金(Au),含添加元素及雜質的金之純度99.98質量%以上而成者。
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2007288800A JP4195495B1 (ja) | 2007-11-06 | 2007-11-06 | ボールボンディング用金合金線 |
Publications (2)
Publication Number | Publication Date |
---|---|
TW200927957A TW200927957A (en) | 2009-07-01 |
TWI399446B true TWI399446B (zh) | 2013-06-21 |
Family
ID=40174719
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW097141528A TWI399446B (zh) | 2007-11-06 | 2008-10-29 | 銲球接合用金合金線 |
Country Status (8)
Country | Link |
---|---|
US (1) | US20100314156A1 (zh) |
EP (1) | EP2209136A4 (zh) |
JP (1) | JP4195495B1 (zh) |
KR (1) | KR101158547B1 (zh) |
CN (1) | CN101842885B (zh) |
MY (1) | MY145675A (zh) |
TW (1) | TWI399446B (zh) |
WO (1) | WO2009060698A1 (zh) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN100501956C (zh) * | 2004-11-26 | 2009-06-17 | 田中电子工业株式会社 | 半导体组件用金焊接线 |
JP5024907B2 (ja) * | 2010-01-06 | 2012-09-12 | 田中電子工業株式会社 | 金(Au)合金ボンディングワイヤ |
US20140374151A1 (en) * | 2013-06-24 | 2014-12-25 | Jia Lin Yap | Wire bonding method for flexible substrates |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI398048B (zh) * | 2010-03-30 | 2013-06-01 | Rite Tech Ind Co Ltd | An electrical outlet device with a hidden socket |
Family Cites Families (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4676827A (en) * | 1985-03-27 | 1987-06-30 | Mitsubishi Kinzoku Kabushiki Kaisha | Wire for bonding a semiconductor device and process for producing the same |
JPS62278241A (ja) * | 1986-05-26 | 1987-12-03 | Shoei Kagaku Kogyo Kk | ボンデイングワイヤ |
KR920010119B1 (ko) * | 1989-04-28 | 1992-11-16 | 다나카 덴시 고오교오 가부시기가이샤 | 반도체 소자의 본딩(bonding)용 금선 |
JP3337049B2 (ja) * | 1995-05-17 | 2002-10-21 | 田中電子工業株式会社 | ボンディング用金線 |
JP3328135B2 (ja) * | 1996-05-28 | 2002-09-24 | 田中電子工業株式会社 | バンプ形成用金合金線及びバンプ形成方法 |
JP3657087B2 (ja) * | 1996-07-31 | 2005-06-08 | 田中電子工業株式会社 | ウエッジボンディング用金合金線 |
US5945065A (en) * | 1996-07-31 | 1999-08-31 | Tanaka Denshi Kogyo | Method for wedge bonding using a gold alloy wire |
JP3690902B2 (ja) * | 1996-07-31 | 2005-08-31 | 田中電子工業株式会社 | ウエッジボンディング用金合金線 |
JP3615897B2 (ja) * | 1997-02-20 | 2005-02-02 | 田中電子工業株式会社 | 半導体素子ボンディング用金合金線 |
JP3382918B2 (ja) * | 2000-05-31 | 2003-03-04 | 田中電子工業株式会社 | 半導体素子接続用金線 |
JP3641231B2 (ja) * | 2001-10-30 | 2005-04-20 | 新日本製鐵株式会社 | 半導体装置及び半導体装置用ボンディングワイヤ |
JP3907534B2 (ja) * | 2002-06-18 | 2007-04-18 | 田中電子工業株式会社 | ボンディング用金合金線 |
CN101032012A (zh) * | 2004-09-30 | 2007-09-05 | 田中电子工业株式会社 | 引线接合隆起物材料 |
CN100501956C (zh) * | 2004-11-26 | 2009-06-17 | 田中电子工业株式会社 | 半导体组件用金焊接线 |
-
2007
- 2007-11-06 JP JP2007288800A patent/JP4195495B1/ja not_active Expired - Fee Related
-
2008
- 2008-10-15 US US12/740,578 patent/US20100314156A1/en not_active Abandoned
- 2008-10-15 KR KR1020097014390A patent/KR101158547B1/ko not_active IP Right Cessation
- 2008-10-15 WO PCT/JP2008/068677 patent/WO2009060698A1/ja active Application Filing
- 2008-10-15 MY MYPI20093747A patent/MY145675A/en unknown
- 2008-10-15 CN CN2008801134970A patent/CN101842885B/zh not_active Expired - Fee Related
- 2008-10-15 EP EP08846626.3A patent/EP2209136A4/en not_active Withdrawn
- 2008-10-29 TW TW097141528A patent/TWI399446B/zh not_active IP Right Cessation
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI398048B (zh) * | 2010-03-30 | 2013-06-01 | Rite Tech Ind Co Ltd | An electrical outlet device with a hidden socket |
Also Published As
Publication number | Publication date |
---|---|
CN101842885A (zh) | 2010-09-22 |
KR20090104022A (ko) | 2009-10-05 |
JP2009117605A (ja) | 2009-05-28 |
MY145675A (en) | 2012-03-15 |
US20100314156A1 (en) | 2010-12-16 |
EP2209136A4 (en) | 2013-08-07 |
KR101158547B1 (ko) | 2012-06-20 |
CN101842885B (zh) | 2012-03-28 |
EP2209136A1 (en) | 2010-07-21 |
WO2009060698A1 (ja) | 2009-05-14 |
JP4195495B1 (ja) | 2008-12-10 |
TW200927957A (en) | 2009-07-01 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
KR100899322B1 (ko) | Au 합금 본딩·와이어 | |
JP4691533B2 (ja) | 半導体装置用銅合金ボンディングワイヤ | |
KR101536554B1 (ko) | 본딩용 와이어 | |
EP1160344B1 (en) | Gold wire for semiconductor element connection and semiconductor element connection method | |
JP4482605B1 (ja) | 高純度Cuボンディングワイヤ | |
TW201228764A (en) | Pb-free solder alloy mainly containing Zn | |
TW200419683A (en) | A gold bonding wire for a semiconductor device and a method for producing the same | |
WO2011118009A1 (ja) | 高純度Cuボンディングワイヤ | |
TW200923107A (en) | Bonding wire | |
TWI399446B (zh) | 銲球接合用金合金線 | |
TWI448568B (zh) | Gold (Au) alloy bonding wire | |
JP4134261B1 (ja) | ボールボンディング用金合金線 | |
JP2003059964A (ja) | ボンディングワイヤ及びその製造方法 | |
JPH1098063A (ja) | ウエッジボンディング用金合金線 | |
JPH1167811A (ja) | 半導体素子用金銀合金細線 | |
JPH1167812A (ja) | 半導体素子用金銀合金細線 | |
JP3445616B2 (ja) | 半導体素子用金合金細線 | |
JP3907534B2 (ja) | ボンディング用金合金線 | |
JP5339101B2 (ja) | バンプ用ワイヤ | |
TW202234482A (zh) | 半導體裝置用Ag合金接合線 | |
TW202239983A (zh) | 鋁配線材料 | |
JP2005150166A (ja) | 極細線のワイヤボンディング方法 | |
JPH02251156A (ja) | 半導体素子ボンディング用金合金線 | |
WO2004049425A1 (ja) | 半導体装置用金ボンディングワイヤおよびその製造方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
MM4A | Annulment or lapse of patent due to non-payment of fees |