JP2001068497A - 半導体素子と回路基板との接続方法 - Google Patents

半導体素子と回路基板との接続方法

Info

Publication number
JP2001068497A
JP2001068497A JP24017799A JP24017799A JP2001068497A JP 2001068497 A JP2001068497 A JP 2001068497A JP 24017799 A JP24017799 A JP 24017799A JP 24017799 A JP24017799 A JP 24017799A JP 2001068497 A JP2001068497 A JP 2001068497A
Authority
JP
Japan
Prior art keywords
wire
bonding
land
circuit board
semiconductor element
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP24017799A
Other languages
English (en)
Other versions
JP3997665B2 (ja
Inventor
Toshio Suzuki
俊夫 鈴木
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Denso Corp
Original Assignee
Denso Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Denso Corp filed Critical Denso Corp
Priority to JP24017799A priority Critical patent/JP3997665B2/ja
Publication of JP2001068497A publication Critical patent/JP2001068497A/ja
Application granted granted Critical
Publication of JP3997665B2 publication Critical patent/JP3997665B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L24/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554—External layer
    • H01L2224/0555—Shape
    • H01L2224/05552—Shape in top view
    • H01L2224/05553—Shape in top view being rectangular
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/4501—Shape
    • H01L2224/45012—Cross-sectional shape
    • H01L2224/45014—Ribbon connectors, e.g. rectangular cross-section
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/4501—Shape
    • H01L2224/45012—Cross-sectional shape
    • H01L2224/45015—Cross-sectional shape being circular
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144—Gold (Au) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
    • H01L2224/48465—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/48475—Connecting portions connected to auxiliary connecting means on the bonding areas, e.g. pre-ball, wedge-on-ball, ball-on-ball
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/48475—Connecting portions connected to auxiliary connecting means on the bonding areas, e.g. pre-ball, wedge-on-ball, ball-on-ball
    • H01L2224/48476—Connecting portions connected to auxiliary connecting means on the bonding areas, e.g. pre-ball, wedge-on-ball, ball-on-ball between the wire connector and the bonding area
    • H01L2224/48477—Connecting portions connected to auxiliary connecting means on the bonding areas, e.g. pre-ball, wedge-on-ball, ball-on-ball between the wire connector and the bonding area being a pre-ball (i.e. a ball formed by capillary bonding)
    • H01L2224/48478—Connecting portions connected to auxiliary connecting means on the bonding areas, e.g. pre-ball, wedge-on-ball, ball-on-ball between the wire connector and the bonding area being a pre-ball (i.e. a ball formed by capillary bonding) the connecting portion being a wedge bond, i.e. wedge on pre-ball
    • H01L2224/4848—Connecting portions connected to auxiliary connecting means on the bonding areas, e.g. pre-ball, wedge-on-ball, ball-on-ball between the wire connector and the bonding area being a pre-ball (i.e. a ball formed by capillary bonding) the connecting portion being a wedge bond, i.e. wedge on pre-ball outside the semiconductor or solid-state body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/48475—Connecting portions connected to auxiliary connecting means on the bonding areas, e.g. pre-ball, wedge-on-ball, ball-on-ball
    • H01L2224/48476—Connecting portions connected to auxiliary connecting means on the bonding areas, e.g. pre-ball, wedge-on-ball, ball-on-ball between the wire connector and the bonding area
    • H01L2224/48491—Connecting portions connected to auxiliary connecting means on the bonding areas, e.g. pre-ball, wedge-on-ball, ball-on-ball between the wire connector and the bonding area being an additional member attached to the bonding area through an adhesive or solder, e.g. buffer pad
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/485—Material
    • H01L2224/48505—Material at the bonding interface
    • H01L2224/48599—Principal constituent of the connecting portion of the wire connector being Gold (Au)
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/485—Material
    • H01L2224/48505—Material at the bonding interface
    • H01L2224/48599—Principal constituent of the connecting portion of the wire connector being Gold (Au)
    • H01L2224/486—Principal constituent of the connecting portion of the wire connector being Gold (Au) with a principal constituent of the bonding area being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/48617—Principal constituent of the connecting portion of the wire connector being Gold (Au) with a principal constituent of the bonding area being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950 °C
    • H01L2224/48624—Aluminium (Al) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/494—Connecting portions
    • H01L2224/4943—Connecting portions the connecting portions being staggered
    • H01L2224/49433—Connecting portions the connecting portions being staggered outside the semiconductor or solid-state body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/494—Connecting portions
    • H01L2224/4945—Wire connectors having connecting portions of different types on the semiconductor or solid-state body, e.g. regular and reverse stitches
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/78—Apparatus for connecting with wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/78—Apparatus for connecting with wire connectors
    • H01L2224/7825—Means for applying energy, e.g. heating means
    • H01L2224/783—Means for applying energy, e.g. heating means by means of pressure
    • H01L2224/78301—Capillary
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/78—Apparatus for connecting with wire connectors
    • H01L2224/7825—Means for applying energy, e.g. heating means
    • H01L2224/783—Means for applying energy, e.g. heating means by means of pressure
    • H01L2224/78313—Wedge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/85009—Pre-treatment of the connector or the bonding area
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/85009—Pre-treatment of the connector or the bonding area
    • H01L2224/8503—Reshaping, e.g. forming the ball or the wedge of the wire connector
    • H01L2224/85035—Reshaping, e.g. forming the ball or the wedge of the wire connector by heating means, e.g. "free-air-ball"
    • H01L2224/85045—Reshaping, e.g. forming the ball or the wedge of the wire connector by heating means, e.g. "free-air-ball" using a corona discharge, e.g. electronic flame off [EFO]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/85009—Pre-treatment of the connector or the bonding area
    • H01L2224/85051—Forming additional members, e.g. for "wedge-on-ball", "ball-on-wedge", "ball-on-ball" connections
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/85053—Bonding environment
    • H01L2224/85095—Temperature settings
    • H01L2224/85099—Ambient temperature
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/8512—Aligning
    • H01L2224/85148—Aligning involving movement of a part of the bonding apparatus
    • H01L2224/85169—Aligning involving movement of a part of the bonding apparatus being the upper part of the bonding apparatus, i.e. bonding head, e.g. capillary or wedge
    • H01L2224/8518—Translational movements
    • H01L2224/85181—Translational movements connecting first on the semiconductor or solid-state body, i.e. on-chip, regular stitch
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/8512—Aligning
    • H01L2224/85148—Aligning involving movement of a part of the bonding apparatus
    • H01L2224/85169—Aligning involving movement of a part of the bonding apparatus being the upper part of the bonding apparatus, i.e. bonding head, e.g. capillary or wedge
    • H01L2224/8518—Translational movements
    • H01L2224/85191—Translational movements connecting first both on and outside the semiconductor or solid-state body, i.e. regular and reverse stitches
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/852—Applying energy for connecting
    • H01L2224/85201—Compression bonding
    • H01L2224/85205—Ultrasonic bonding
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/8538—Bonding interfaces outside the semiconductor or solid-state body
    • H01L2224/85399—Material
    • H01L2224/854—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/85417—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
    • H01L2224/85424—Aluminium (Al) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/91—Methods for connecting semiconductor or solid state bodies including different methods provided for in two or more of groups H01L2224/80 - H01L2224/90
    • H01L2224/92—Specific sequence of method steps
    • H01L2224/922—Connecting different surfaces of the semiconductor or solid-state body with connectors of different types
    • H01L2224/9222—Sequential connecting processes
    • H01L2224/92242—Sequential connecting processes the first connecting process involving a layer connector
    • H01L2224/92247—Sequential connecting processes the first connecting process involving a layer connector the second connecting process involving a wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01004—Beryllium [Be]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01005—Boron [B]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01006—Carbon [C]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01013—Aluminum [Al]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01029—Copper [Cu]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01033—Arsenic [As]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01047—Silver [Ag]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01074—Tungsten [W]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01079—Gold [Au]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01082—Lead [Pb]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/013—Alloys
    • H01L2924/014—Solder alloys
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151—Die mounting substrate
    • H01L2924/156—Material
    • H01L2924/15786—Material with a principal constituent of the material being a non metallic, non metalloid inorganic material
    • H01L2924/15787—Ceramics, e.g. crystalline carbides, nitrides or oxides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/20—Parameters
    • H01L2924/201—Temperature ranges
    • H01L2924/20102—Temperature range 0 C=<T<60 C, 273.15 K =<T< 333.15K
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/20—Parameters
    • H01L2924/207—Diameter ranges
    • H01L2924/20753—Diameter ranges larger or equal to 30 microns less than 40 microns
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/20—Parameters
    • H01L2924/207—Diameter ranges
    • H01L2924/20755—Diameter ranges larger or equal to 50 microns less than 60 microns
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/20—Parameters
    • H01L2924/207—Diameter ranges
    • H01L2924/2076—Diameter ranges equal to or larger than 100 microns

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Wire Bonding (AREA)

Abstract

(57)【要約】 【課題】 半導体素子と回路基板とをワイヤボンディン
グで形成されたＡｕよりなる導線によって電気的に接続
する方法において、回路基板に形成された卑金属よりな
る配線の酸化により、Ａｕワイヤボンディングの接合性
が低下することを回避するとともに、狭ピッチ化に対応
したワイヤボンディング用のランドを提供する。 【解決手段】 回路基板１の配線４において、室温にて
ウェッジボンディングを行ってＡｕよりなるランド５を
形成した後、半導体素子３の電極３ａを１次側、ランド
５を２次側としてＡｕワイヤボールボンディングを行う
ことにより導線１０を形成し、電極３ａとランド５とを
電気的に接続する。ウェッジボンディングによりランド
５を形成するため、ランド５はＡｕワイヤ６を少しつぶ
した程度の大きさにすることができ、また、室温で行う
ため、ランド５を形成する際に回路基板１の配線４が酸
化することはない。

Description

【発明の詳細な説明】
【０００１】
【発明の属する技術分野】本発明は、半導体素子の電極
と回路基板の配線とをワイヤボンディングで形成された
Ａｕよりなる導線によって電気的に接続する方法に関す
る。
【０００２】
【従来の技術】半導体製品の高機能化とともに、例えば
ハイブリッドＩＣに実装される半導体素子（ベアチップ
ＩＣ）の電極は、狭ピッチおよび多端子化の傾向にあ
る。このため、半導体素子の電極と回路基板上の配線と
の間を狭ピッチ化に対応できるＡｕ（金）ワイヤボール
ボンディング手法を用いる必要性がでてきた。また、回
路基板の低コスト化のために回路基板の配線にはコスト
の高いＡｕ等の貴金属ではなく、Ｃｕ（銅）等の卑金属
を用いる必要性がある。
【０００３】しかし、回路基板上のＣｕ配線にＡｕワイ
ヤボールボンディング手法を実施する場合は回路基板を
加熱する必要性があり、この加熱によりＣｕ配線が酸化
してＡｕワイヤのボンディング接合性が低下するといっ
た不具合がある。そこで、このような不具合に対して、
回路基板上のＡｕワイヤをボンディングする部分（ボン
ディングランド部）を工夫することにより上述の不具合
を解決する様々な提案がなされている。
【０００４】例えば、特開昭５７−１３０４４３号公報
に記載の発明においては、この発明の接続方法を用いた
回路基板の模式的な断面図である図６に示すように、回
路基板Ｊ１上のＣｕ配線Ｊ２のうちボンディングランド
部Ｊ３をＡｕ厚膜などの貴金属を用いて予め形成してお
く。そして、その後、上述の半導体素子Ｊ４の電極部Ｊ
４ａと回路基板Ｊ１のボンディングランド部Ｊ３とを、
Ａｕワイヤを用いてワイヤボンディングすることによ
り、半導体素子Ｊ４と回路基板Ｊ１とを導線Ｊ５によっ
て電気的に接続するという手法を用いている。
【０００５】また、特開平３−９１２５１号公報に記載
の発明の接続方法を用いた回路基板の模式的な断面図を
図７（ａ）に示す。この発明では、Ａｕ厚膜などを回路
基板Ｊ１上に形成せずに、予め回路基板Ｊ１のＣｕ配線
Ｊ２上にＡｕパッドＪ６を溶接してボンディングランド
部を形成する。その後、特開昭５７−１３０４４３号公
報と同様にＡｕワイヤからなる導線Ｊ５によって接続す
る。
【０００６】さらに、特開平１０−１１２４７１号公報
に記載の発明では、この発明の接続方法を用いた回路基
板の模式的な断面図である図８（ａ）に示すように、予
め回路基板Ｊ１のＣｕ配線Ｊ２上にＡｕワイヤボールボ
ンディングを行ってボール状のバンプＪ７を形成してお
き、その後は、特開昭５７−１３０４４３号公報と同様
にＡｕワイヤからなる導線Ｊ５によって接続するという
手法が提案されている。
【０００７】
【発明が解決しようとする課題】しかしながら、上述の
特開昭５７−１３０４４３号公報に記載の発明では、Ａ
ｕ厚膜等の貴金属を用いるため回路基板のコストが高く
なるという不具合がある。また、特開平３−９１２５１
号公報に記載の発明では、ＡｕリボンからなるＡｕパッ
ドＪ６をパラレルギャップ溶接等の手法で溶接する場
合、このＡｕパッドＪ６の寸法は少なくとも１ｍｍ×１
ｍｍ程度の大きさが必要である。図７（ｂ）はこの発明
を用いた場合の回路基板の模式的な上面図である。
【０００８】このＡｕパッドＪ６の大きさで、例えば、
１００をこえる電極端子数をもつ半導体素子Ｊ４を回路
基板Ｊ１に組み付け、ＡｕパッドＪ６を回路基板Ｊ１上
にレイアウトした場合には、図７（ｂ）に示す様に、ワ
イヤボンディング部の実装面積が大きくなってしまう。
そして、それにより、Ａｕワイヤからなる導線Ｊ５のボ
ンディング長が長くなりすぎてＡｕワイヤボンディング
ができないといった不具合も生じる。従って、本公報に
記載の発明では、近年の半導体素子の電極の狭ピッチ化
および多端子化に対応できない。
【０００９】一方、特開平１０−１１２４７１号公報に
記載の発明を用いた場合、回路基板の模式的な上面図で
ある図８（ｂ）に示す様に、Ａｕワイヤの接合性を確保
し、かつ、例えば３００μｍピッチ程度の狭ピッチなＡ
ｕワイヤボンディング用のランドを形成することができ
る。しかし、最初にＣｕ配線Ｊ２上にバンプＪ７を形成
する手法はＡｕワイヤボールボンディングであるため、
ボンディング時に回路基板Ｊ１を加熱する必要がある。
これにより、回路基板Ｊ１上へのＡｕワイヤボンディン
グの本数が多い場合には、加熱時間が長くなるためにＣ
ｕ配線Ｊ２の酸化が生じてしまい、バンプＪ７をうまく
接合することができないといった不具合がある。
【００１０】本発明は、上記問題点に鑑み、半導体素子
と回路基板上に形成された複数個の配線とをワイヤボン
ディングで形成されたＡｕよりなる導線によって電気的
に接続する方法において、回路基板に形成された卑金属
よりなる配線の酸化により、Ａｕワイヤボンディングの
接合性が低下することを回避するとともに、狭ピッチ化
に対応したワイヤボンディング用のランドを提供するこ
とを目的とする。
【００１１】
【課題を解決するための手段】上記目的を達成するた
め、請求項１に記載の発明では、回路基板（１）上に形
成された複数個の配線（４）のワイヤボンディングを行
う全ての部分に、ウェッジボンディングを行ってＡｕよ
りなるランド（５）を形成し、その後、半導体素子
（３）とランド（５）との間をワイヤボンドすることに
よりＡｕよりなる導線（１０）を形成することを特徴と
している。
【００１２】本発明によれば、ランド（５）の形成をウ
ェッジボンディングによって行っており、ウェッジボン
ディングは基板の加熱を伴わずに行うことができるた
め、回路基板（１）の配線（４）上にランド（５）を形
成する際に配線（４）が酸化することを防ぎ、適切にラ
ンド（５）を形成することができる。また、ウェッジボ
ンディングによりランド（５）を形成したことにより、
ランド（５）の大きさはＡｕワイヤ（６）を少しつぶし
た程度の大きさにすることができる。そのため、複数個
の配線（４）を狭ピッチ化しても、それに対応してラン
ド（５）を形成できる。従って、回路基板に形成された
卑金属よりなる配線の酸化により、Ａｕワイヤボンディ
ングの接合性が低下することを回避するとともに、狭ピ
ッチ化に対応したワイヤボンディング用のランドを提供
することができる。
【００１３】請求項２に記載の発明では、請求項１に記
載の発明において、ランド（５）を形成した後、回路基
板（１）を加熱することにより、ランド（５）を構成す
るＡｕと配線（４）を構成する金属とを相互に拡散させ
ることを特徴としている。これにより、ランド（５）と
配線（４）との接合性を向上させることができる。
【００１４】なお、上記各手段の括弧内の符号は、後述
する実施形態に記載の具体的手段との対応関係を示すも
のである。
【００１５】
【発明の実施の形態】本発明は、回路基板上に対するＡ
ｕワイヤを用いたワイヤボンディングの方法であり、主
にハイブリッドＩＣの実装に用いて好適である。図１お
よび図２は、本発明の第１実施形態に係る半導体素子と
回路基板との接続方法を示す工程図であり、本接続方法
は、図３に示す本実施形態のフローチャートに示すよう
に、ウェッジボンディングを行った後に、ボールボンデ
ィングを行うものことにより、最終的に図２（ｄ）に示
す接続構造（部分断面図）を得るものである。なお、図
１および図２（ａ）〜（ｃ）は、図２（ｄ）に対応した
断面にて各接続工程の状態を示している。以下、接続工
程順に説明する。
【００１６】まず、図１（ａ）に示す様に、回路基板
（セラミック基板やプリント基板などの基板もしくはリ
ードフレーム）１を用意する。この回路基板１の一面上
には、ダイマウント材（例えばはんだやＡｇペースト）
２により半導体素子３がダイマウントされ、半導体素子
３上には、半導体素子３の内部回路と電気的に接続され
た複数の電極３ａが設けられている。一方、回路基板１
の一面上のうち半導体素子３の設置領域と異なる部分に
は、Ｃｕ等の卑金属からなる配線材料を用いた複数の配
線４が形成されており、本実施形態ではＣｕを用いてい
る。
【００１７】そして、ウェッジボンディング用のワイヤ
ボンダを用いて、図１（ａ）〜（ｃ）に示す様に、この
配線４上に、Ａｕよりなる複数個のＡｕランド５を、Ａ
ｕワイヤ６を用いて室温において、つまり、回路基板１
を加熱することなくウェッジボンディングにより形成す
る。ここで、本発明でいうウェッジボンディングとは、
周知の様に、超音波振動をするウェッジボンディング用
のワイヤボンドツール（以下、ウェッジツールとする）
先端で、ボンディングワイヤを非接触物に押し付け、超
音波振動と荷重により接合するという手法である。初め
に、図１（ａ）に示す様に、ウェッジツール７の先端に
ボンディングワイヤとしてのＡｕワイヤ６があるような
状態にする。ここで用いるＡｕワイヤ６の直径は、例え
ば、３０μｍ、５０μｍあるいは１００μｍ程度のもの
である。
【００１８】次に、図１（ｂ）に示す様に、ウェッジツ
ール７を配線４上に位置させてウェッジボンディングを
行いＡｕランド５を形成する。具体的には、Ａｕワイヤ
６をウェッジボンドした後、Ａｕワイヤ６をクランプし
て、図１（ｂ）のＡの部分で引きちぎるか、あるいは、
カッター等で切ることによりＡｕランド５を形成するこ
とができる。ここで、Ａｕランド５の幅は、後述のボー
ルボンディングを行う時に用いるＡｕワイヤ６の直径の
１．５倍程度以上あるようにする。次に、図１（ｃ）に
示す様に、次のＡｕランド５の形成に備える。以上これ
ら図１（ａ）〜（ｃ）の工程を順次繰り返し、必要とさ
れる全てのＡｕランド５を形成する。ここまでが、図３
に示すＡｕワイヤウェッジボンディング工程Ｓ１であ
る。
【００１９】次に、図２（ａ）〜（ｄ）に示す様に、ボ
ールボンディング用のワイヤボンダを用いて、回路基板
１を加熱しつつ、半導体素子３の複数の電極３ａを１次
側、回路基板１の配線４上に形成された複数のＡｕラン
ド５を２次側として、ボールボンディングによって半導
体素子３と回路基板１とをワイヤボンドする。まず、図
２（ａ）に示すように、キャピラリ８の貫通孔にＡｕワ
イヤ６を挿通した状態で、トーチ電極９からの放電によ
りキャピラリ８から突出したＡｕワイヤ６の先端にＡｕ
ボール６ａを形成する。ここで用いるＡｕワイヤ６の直
径は、例えば、３０μｍ、５０μｍあるいは１００μｍ
程度のものを用いることができる。
【００２０】そして、図２（ｂ）に示すように、キャピ
ラリ８を半導体素子３の電極３ａ上に位置させ、１次ボ
ンディングを行う。次に、図２（ｃ）に示すように、Ａ
ｕワイヤ６をルーピングしてキャピラリ８をＡｕランド
５上に位置させ２次ボンディングを行い、Ａｕよりなる
導線１０を形成する。そして、図２（ａ）〜（ｃ）の工
程を順次繰り返し、全てのＡｕランド５と対応する半導
体素子３の電極３ａとを導線１０によって接続する。こ
こまでが、図３に示すＡｕワイヤボールボンディング工
程Ｓ２である。以上、各工程Ｓ１およびＳ２を行うこと
により、図２（ｄ）に示すように、半導体素子３の電極
３ａと回路基板１の全てのＡｕランド５との間にＡｕワ
イヤ６よりなる導線１０が形成され、半導体素子３と回
路基板１とが電気的に接続される。
【００２１】ところで、本実施形態によれば、Ａｕラン
ド５の形成をウェッジボンディングによって行ってお
り、ウェッジボンディングは回路基板１の加熱を伴わず
に行うことができるため、回路基板１の配線４上にＡｕ
ランド５を形成する際に配線４が酸化することを防ぎ、
適切にＡｕランド５を形成することができる。また、予
め必要とされる全てのＡｕランド５を形成し、その後、
そのＡｕランド５を２次側としてＡｕワイヤ６を用いて
ボールボンディングを行っており、２次ボンディングは
Ａｕどうしの接合であるため、Ａｕワイヤ６を用いたワ
イヤボンディングの接合性が低下することはない。
【００２２】また、ウェッジボンディングによりＡｕラ
ンド５を形成するため、Ａｕワイヤ６を少しつぶした程
度の大きさである小さなＡｕランド５を形成することが
できる。詳しくは、Ａｕランド５の上面図である図４に
示すように、つぶれ幅ＷをＡｕワイヤ６のワイヤ径の
１．５〜３倍程度にし、つぶれ長さＬをＡｕワイヤ６の
ワイヤ径の２〜５倍程度にすることができる。従って、
回路基板に形成された卑金属よりなる配線の酸化によ
り、Ａｕワイヤボンディングの接合性が低下することを
回避するとともに、狭ピッチ化に対応したワイヤボンデ
ィング用のランドを提供することができる。
【００２３】なお、Ａｕランド５を形成するのに用いる
Ａｕワイヤ６と、その後ボールボンディングを行うのに
用いるＡｕワイヤ６との直径は同じであってもよいし異
なっていてもよいが、Ａｕランド５に対して２次ボンデ
ィングを行った際にＡｕワイヤがＡｕランド５からはみ
出さない様にする必要がある。また、本実施形態の接続
方法では、回路基板１の配線４に形成されたＡｕランド
５をボールボンディングの２次側としたが、これとは逆
に、半導体素子３の電極３ａをボールボンディングの２
次側としてもよい。
【００２４】（他の実施形態）本実施形態のフローチャ
ートを図５に示す。本実施形態は、上述の実施形態にお
けるＡｕワイヤウェッジボンディング工程Ｓ１とＡｕワ
イヤボールボンディング工程Ｓ２との間に、加熱工程Ｓ
３を行うものである。具体的には、この加熱工程Ｓ３で
は、回路基板１を、例えば、１５０℃程度の温度に加熱
することができる。本実施形態によれば、回路基板１を
加熱することにより、Ａｕランド５を構成するＡｕと配
線４を構成するＣｕとを相互に拡散させ、Ａｕランド５
の配線４への接合性を向上させることができる。
【００２５】なお、この加熱工程Ｓ３は、Ａｕワイヤボ
ールボンディング工程Ｓ２を行った後に行ってもよい。
また、Ａｕワイヤボールボンディング工程Ｓ２において
も回路基板１を加熱しているが、その時の温度は、例え
ば、１００〜１１０℃程度の温度であり、本実施形態の
加熱工程Ｓ３における加熱温度よりも低い。従って、Ａ
ｕランド５の配線４への接合性を向上させるためには、
本実施形態の様に加熱工程Ｓ３を行うことが有効であ
る。
【００２６】
【図面の簡単な説明】
【図１】本発明の半導体素子と回路基板との接続方法を
示す工程図である。
【図２】図１に続く接続方法を示す工程図である。
【図３】本発明の実施形態のフローチャートである。
【図４】Ａｕランドの上面図である。
【図５】本発明の他の実施形態のフローチャートであ
る。
【図６】従来の半導体素子と回路基板との接続方法を示
す模式的な断面図である。
【図７】その他の従来の接続方法を示す模式的な図であ
る。
【図８】もう一つのその他の従来の接続方法を示す模式
的な図である。
【符号の説明】
１…回路基板、３…半導体素子、４…配線、５…Ａｕラ
ンド、１０…導線。

Claims (2)

    【特許請求の範囲】
  1. 【請求項１】 半導体素子（３）と回路基板（１）上に
    形成された複数個の配線（４）とをワイヤボンディング
    で形成されたＡｕよりなる導線（１０）によって電気的
    に接続する方法であって、 前記複数個の配線（４）におけるワイヤボンディングを
    行う全ての部分に、ウェッジボンディングを行ってＡｕ
    よりなるランド（５）を形成し、 その後、前記半導体素子（３）と前記ランド（５）との
    間をワイヤボンドすることにより前記導線（１０）を形
    成することを特徴とする半導体素子と回路基板との接続
    方法。
  2. 【請求項２】 前記ランド（５）を形成した後、前記回
    路基板（１）を加熱することにより、前記ランド（５）
    を構成するＡｕと前記配線（４）を構成する金属とを相
    互に拡散させることを特徴とする請求項１に記載の半導
    体素子と回路基板との接続方法。
JP24017799A 1999-08-26 1999-08-26 半導体素子と回路基板との接続方法 Expired - Fee Related JP3997665B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP24017799A JP3997665B2 (ja) 1999-08-26 1999-08-26 半導体素子と回路基板との接続方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP24017799A JP3997665B2 (ja) 1999-08-26 1999-08-26 半導体素子と回路基板との接続方法

Publications (2)

Publication Number Publication Date
JP2001068497A true JP2001068497A (ja) 2001-03-16
JP3997665B2 JP3997665B2 (ja) 2007-10-24

Family

ID=17055629

Family Applications (1)

Application Number Title Priority Date Filing Date
JP24017799A Expired - Fee Related JP3997665B2 (ja) 1999-08-26 1999-08-26 半導体素子と回路基板との接続方法

Country Status (1)

Country Link
JP (1) JP3997665B2 (ja)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2853135A1 (fr) * 2003-03-28 2004-10-01 Denso Corp Dispositif a semiconducteur et procede de soudage de fil pour un dispositif a semiconducteur
WO2006007825A2 (de) * 2004-07-19 2006-01-26 Infineon Technologies Ag Halbleiter und verfahren zu dessen herstellung
US8125060B2 (en) 2006-12-08 2012-02-28 Infineon Technologies Ag Electronic component with layered frame
US20220199571A1 (en) * 2020-12-23 2022-06-23 Skyworks Solutions, Inc. Apparatus and methods for tool mark free stitch bonding

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2853135A1 (fr) * 2003-03-28 2004-10-01 Denso Corp Dispositif a semiconducteur et procede de soudage de fil pour un dispositif a semiconducteur
WO2006007825A2 (de) * 2004-07-19 2006-01-26 Infineon Technologies Ag Halbleiter und verfahren zu dessen herstellung
WO2006007825A3 (de) * 2004-07-19 2006-06-01 Infineon Technologies Ag Halbleiter und verfahren zu dessen herstellung
US8125060B2 (en) 2006-12-08 2012-02-28 Infineon Technologies Ag Electronic component with layered frame
US8703544B2 (en) 2006-12-08 2014-04-22 Infineon Technologies Ag Electronic component employing a layered frame
US20220199571A1 (en) * 2020-12-23 2022-06-23 Skyworks Solutions, Inc. Apparatus and methods for tool mark free stitch bonding

Also Published As

Publication number Publication date
JP3997665B2 (ja) 2007-10-24

Similar Documents

Publication Publication Date Title
US5976964A (en) Method of improving interconnect of semiconductor device by utilizing a flattened ball bond
US7176570B2 (en) Method for forming bump, semiconductor element having bumps and method of manufacturing the same, semiconductor device and method of manufacturing the same, circuit board, and electronic equipment
US7314818B2 (en) Semiconductor device and method of manufacturing the same, circuit board, and electronic equipment
US4674671A (en) Thermosonic palladium lead wire bonding
US6921016B2 (en) Semiconductor device and method of manufacturing the same, circuit board, and electronic equipment
US20080061450A1 (en) Bonding wire and bond using a bonding wire
CN1842394A (zh) 丝线焊接绝缘丝线及其毛细管
EP1367644A1 (en) Semiconductor electronic device and method of manufacturing thereof
TWI452640B (zh) 半導體封裝構造及其封裝方法
JP3997665B2 (ja) 半導体素子と回路基板との接続方法
JP3887993B2 (ja) Ｉｃチップと回路基板との接続方法
JP3972518B2 (ja) ボールボンディング方法および電子部品の接続方法
JP2823000B2 (ja) ワイヤボンディング方法
JP3855523B2 (ja) Ｉｃチップと回路基板との接続方法
JP3202193B2 (ja) ワイヤボンディング方法
JPH05326601A (ja) ワイヤボンディング方法
JP2798040B2 (ja) 半導体装置の製造方法
JPH0525236Y2 (ja)
JP3233194B2 (ja) ワイヤボンディング方法
JPH08236575A (ja) 半導体装置及びその製造方法
JP3061017B2 (ja) 集積回路装置の実装構造およびその実装方法
JP2001007142A (ja) ワイヤボンディング用キャピラリおよび電子部品の接続方法
JPS6379331A (ja) ワイヤボンデイング装置
JPH098046A (ja) 半導体チップの突起電極形成方法
JP2629633B2 (ja) 半導体装置の製造方法

Legal Events

Date Code Title Description
A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20051014

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20060406

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20070327

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20070522

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20070612

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20070621

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20070717

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20070730

R150 Certificate of patent or registration of utility model

Free format text: JAPANESE INTERMEDIATE CODE: R150

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20100817

Year of fee payment: 3

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20100817

Year of fee payment: 3

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20110817

Year of fee payment: 4

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20120817

Year of fee payment: 5

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20130817

Year of fee payment: 6

LAPS Cancellation because of no payment of annual fees