JP3887993B2 - Ｉｃチップと回路基板との接続方法 - Google Patents

Ｉｃチップと回路基板との接続方法 Download PDF

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JP3887993B2
JP3887993B2 JP13189899A JP13189899A JP3887993B2 JP 3887993 B2 JP3887993 B2 JP 3887993B2 JP 13189899 A JP13189899 A JP 13189899A JP 13189899 A JP13189899 A JP 13189899A JP 3887993 B2 JP3887993 B2 JP 3887993B2
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circuit board
bonding
chip
land
wire
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JP2000323515A (ja
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幸宏 前田
崇 長坂
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Denso Corp
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Denso Corp
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Description

【０００１】
【発明の属する技術分野】
本発明は、ＩＣチップの電極と回路基板の電極とをワイヤボンディングで形成された導線によって電気的に接続する方法に関する。
【０００２】
【従来の技術】
ＩＣチップのパッドおよび回路基板（配線基板）のランドとをＡｕワイヤ（導線）を用いたワイヤボンディングにて電気的に接続する場合に、一般に、回路基板上の配線材料がＣｕ等のようなＡｕワイヤとの接合性の悪い材料であると、ランド上に直接ボンディングを行うことができないとされている。
【０００３】
このような回路基板でＩＣチップの電極（パッド）および回路基板の電極（ランド）とにワイヤボンディングを行うには、まず、回路基板のランド上にＡｕワイヤにて予め接合性のよいボールボンディングを行ってバンプを予め形成しておく。次に、ＩＣチップ上のパッドに１次ボンディングを行い、続いてランド上に形成しておいたバンプに２次ボンディングを行う。以上の工程によって、Ａｕワイヤボンディングの接合性を確保している。
【０００４】
この方法によれば、回路基板のＣｕ等のランドとＡｕワイヤは接合性のよいボールボンディングで接合し、さらにランド上のバンプとＡｕワイヤは通常のウェッジボンディングで同質同材のＡｕ同士の接合を行うことによって良好な接合を得ることができる。
【０００５】
【発明が解決しようとする課題】
上記の接続方法では、Ａｕワイヤと被ボンディング材料とを超音波振動によって固着させるだけでなく、熱を加えながらボンディングを行うことにより両金属間の拡散による合金層形成を促して接合性を得るという方法を用いている。従って、回路基板およびＩＣチップはボンディング時において加熱されている。このため、回路基板のランドとしてＣｕ等の卑金属を用いる場合には、熱によりランドが必ず酸化してしまう。
【０００６】
このランドの酸化を防止してボンディングを行う方法として、酸化が急速に進行しない程度の低温（１００〜１２０℃程度）で回路基板等を加熱してボンディングする方法がある。
ここで、従来行われているＩＣチップと回路基板との接続方法におけるボンディングの順序を図４、５を用いて説明する。図４、５はＩＣチップと回路基板とのボンディング順序を模式的に示したものであり、図中ＩＣチップ上のパッドおよび回路基板上のランドは省略している。ボンディングの順序としては、まず、図４（ａ）〜（ｅ）に示すように、回路基板上のランドにボールボンディングによってバンプ６を形成し、続いてＩＣチップ３上のパッドからバンプ６にワイヤボンディングを行って導線１０を形成する工程を繰り返し行う方法があり、さらに、図５（ａ）〜（ｃ）に示すように、１つのＩＣチップ３に対応するすべてのランドにボールボンディングを行ってバンプ６を形成した後、ＩＣチップ３からランド上のバンプ６へのボンディングを行って導線１０を形成する方法がある。
【０００７】
しかしながら、これらいずれの方法においても、回路基板上にワイヤボンディングすべきＩＣチップが複数設置されておりボンディング点数が多数ある場合には、ボンディングに時間がかかりすぎてしまい、上記のように酸化が急速に進行しない程度の温度でボンディングを行ったとしても、最後の方のＩＣチップに対応したランドにボールボンディングを行う前にランドが酸化してしまう。
【０００８】
従って、回路基板上に複数のＩＣチップが設置されている場合には、ボンディングが進むにつれて回路基板におけるまだボンディングが終わっていないランドが酸化されてしまい、ボールボンディングが接合できなくなってしまうという問題があった。
本発明は、上記点に鑑み、複数のＩＣチップと回路基板とをワイヤボンディングで形成された導線によって電気的に接続する方法において、ランドが酸化する前にランドへのボンディングを行って接合性を確保することを目的とする。
【０００９】
【課題を解決するための手段】
本発明は、上記目的を達成するために、請求項１記載の発明では、ワイヤボンディングの２次側となるすべてのランド（４）についてバンプ（６）を形成するバンプ形成工程と、パッド（３ａ）を１次側とするとともにバンプ（６）を２次側としてワイヤボンディングを行うことにより導線（１０）を形成し、ＩＣチップ（３）および回路基板（１）とを電気的に接続するボンディング工程とを備え、バンプ形成工程は、回路基板（１）の表面温度が均一でない場合には、回路基板（１）における温度の高い位置にあるランド（４）から温度の低い位置にあるランド（４）の順にバンプ（６）を形成することを特徴としている。
【００１０】
これにより、複数のＩＣチップ（３）が設置されている回路基板（１）において、ＩＣチップ（３）と回路基板（１）とをワイヤボンディングにて接続する際に、まず最初にすべてのランド（４）についてボンディングを行ってバンプ（６）を形成するので、最後の方にボンディングするランド（４）についても酸化する前にボンディングを行うことができ、ランド（４）とバンプ（６）との接合性を確保することができる。
【００１１】
また、回路基板（１）の表面温度が均一でない場合は、温度が高い位置にあるランド（４）から酸化する。そこで、回路基板（１）における温度の高い位置にあるランド（４）から温度の低い位置にあるランド（４）の順にバンプ（６）を形成することで、ランド（４）が酸化する前に効率よくランド（４）にボンディングを行うことができる。
【００１２】
なお、上記各手段の括弧内の符号は、後述する実施形態に記載の具体的手段との対応関係を示す一例である。
【００１３】
【発明の実施の形態】
以下、本発明を適用したＩＣチップと回路基板との接続方法について図に基づいて説明する。
図１および２は、本発明の第１実施形態に係るＩＣチップ３と回路基板１との接続方法を示す工程図であり、図３はボンディング後の回路基板を示している。なお、図３ではＩＣチップ３上のパッド３ａを省略している。以下、接続工程順に説明する。
【００１４】
まず、回路基板（セラミック基板やプリント基板などの基板）１を用意する。この回路基板１の一面上には、ワイヤボンディングすべきＩＣチップ３が複数設置されている。このＩＣチップ３は、ダイマウントペースト２（例えばはんだやＡｇペースト）により回路基板１上にダイマウントされており、ＩＣチップ３上には、ＩＣチップ３の内部回路と電気的に接続されたパッド３ａが設けられている。一方、回路基板１の一面上のうちＩＣチップ３の設置領域と異なる部分には、Ｃｕ、Ｎｉ、フラッシュＡｕめっき等のようにＡｕワイヤと接合性の悪い配線材料を用いたランド４が形成されている。
【００１５】
次に、回路基板１上に形成されているすべてのＩＣチップ３におけるすべてのパッド３ａおよびこれらに対応するランド４の位置認識を画像処理装置により行う。
そして、図１（ａ）〜（ｄ）に示すように、このランド４上に、Ａｕよりなる凸状のＡｕバンプ６を、Ａｕワイヤ５を用いてボールボンディングにより形成する。これは、ＩＣチップ３のパッド３ａとランド４との間をＡｕワイヤ５を用いてワイヤボンディングして後述の導線１０を形成する場合に、Ａｕバンプ６と導線１０とを同質材質のＡｕにより構成することにより、導線１０の接合性を良くするためである。
【００１６】
具体的には、図１（ａ）に示すように、キャピラリ７の貫通孔７ａにＡｕワイヤ５を挿通した状態で、トーチ電極８からの放電によりキャピラリ７から突出したＡｕワイヤ５の先端にボール５ａを形成する。
次に、図１（ｂ）に示すように、キャピラリ７をランド４上に位置させてボールボンディングを行う。このボールボンディングによってＡｕバンプ６を形成する。
【００１７】
次に、図１（ｃ）に示すように、キャピラリ７を後方（Ａｕバンプ６に対しＩＣチップ３と反対側の方向）に移動させてウェッジボンディングを行う。このとき、キャピラリ７をランド４上に押しつけてＡｕバンプ６から延びるＡｕワイヤ５を切断する。
次に、再度、キャピラリ７を上方に移動させ、図１（ｄ）に示すように、トーチ電極８からの放電により、Ａｕワイヤ５の先端に第１のボール５ａを形成する。
【００１８】
以上の図１（ａ）〜（ｄ）の工程を順次繰り返し、複数のＩＣチップ３とのワイヤボンディングの２次側となるすべてのランド４上にＡｕバンプ６を形成していく。図３（ｂ）はすべてのランド４上にＡｕバンプ６を形成した状態の配線基板１を示す。
次に、図２（ａ）に示すように、キャピラリ７の貫通孔７ａにＡｕワイヤ５を挿通した状態で、トーチ電極８からの放電によりキャピラリ７から突出したＡｕワイヤ５の先端にボール５ａを形成する。
【００１９】
次に、図２（ｂ）に示すように、ＩＣチップ３に形成されたパッド３ａ上にボールボンディング（１次ボンディング）を行うとともに、図２（ｃ）に示すように、上記工程で形成したランド４上のバンプ６にウェッジボンディング（２次ボンディング）を行う。これにより、ＩＣチップ３のパッド３ａとランド４上のバンプ６との間にＡｕよりなる上記導線１０が形成され、ＩＣチップ３と回路基板１とが電気的に接続される。
【００２０】
以上の図２（ａ）〜（ｃ）の工程を順次繰り返して、複数のＩＣチップ３におけるすべてのパッド３ａについてボンディングを行う。図４（ｃ）は、以上の図２（ａ）〜（ｃ）の工程により、すべてのパッド３ａにボンディングが終了した後の回路基板１を示している。
以上のように、本発明によれば、回路基板１上にワイヤボンディングすべきＩＣチップ３が複数設置されている場合であっても、まず、ワイヤボンディングの２次側となるすべてのランド４についてボンディングを行うことにより、まだボンディングの終わっていないランド４が酸化する前にすべてのランド４にボンディングを行うことができる。従って、ランド４とバンプ６との接合性を確保することが可能となる。
【００２１】
本発明者らの実験検討によれば、本実施形態によるＩＣチップと回路基板との接合方法で、回路基板１上のランド４が酸化する前に少なくとも１０００本のワイヤボンディングを行うことが可能となることが確認された。
（他の実施形態）
ボンディングを行う際に、回路基板１において温度のバラツキがある場合には、温度の高い位置にあるランド４から先にボンディングを行うことにより、ランド４が酸化する前に効率よくボンディングを行うことができる。
【００２２】
具体的には、まず、ボンディング時における回路基板１の温度分布を予め測定しておく。そして、この測定温度に基づいて回路基板１のうち温度の高い位置に近いランド４から先にボンディングを行うようにする。
【図面の簡単な説明】
【図１】第１のボールにてランド上にバンプを形成する手順を示す工程図である。
【図２】第２のボールにてパッドとバンプとを接続する手順を示す工程図である。
【図３】ＩＣチップと配線基板とを接続する各段階における配線基板の状態を示す平面図である。
【図４】従来技術のＩＣチップと配線基板との接続手順を示す工程図である。
【図５】従来技術のＩＣチップと配線基板との接続手順を示す工程図である。
【符号の説明】
１…回路基板、３…ＩＣチップ、３ａ…パッド、４…ランド、５…Ａｕワイヤ、６…凸状のＡｕバンプ、１０…導線。

Claims (1)

  1. 複数のＩＣチップ（３）におけるパッド（３ａ）および回路基板（１）におけるランド（４）とをワイヤボンディングで形成された導線（１０）によって電気的に接続する方法であって、
    前記複数のＩＣチップ（３）に対応するとともにワイヤボンディングの２次側となるすべての前記ランド（４）についてバンプ（６）を形成するバンプ形成工程と、
    前記バンプ形成工程の後、前記パッド（３ａ）を１次側とするとともに前記バンプ（６）を２次側としてワイヤボンディングを行うことにより前記導線（１０）を形成し、前記ＩＣチップ（３）および前記回路基板（１）とを電気的に接続するボンディング工程とを備え、
    前記バンプ形成工程は、前記回路基板（１）の表面温度が均一でない場合には、回路基板（１）における温度の高い位置にある前記ランド（４）から温度の低い位置にある前記ランド（４）の順に前記バンプ（６）を形成することを特徴とするＩＣチップと回路基板との接続方法。
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