JP2000323515A - Ｉｃチップと回路基板との接続方法 - Google Patents

Ｉｃチップと回路基板との接続方法

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Publication number
JP2000323515A
JP2000323515A JP11131898A JP13189899A JP2000323515A JP 2000323515 A JP2000323515 A JP 2000323515A JP 11131898 A JP11131898 A JP 11131898A JP 13189899 A JP13189899 A JP 13189899A JP 2000323515 A JP2000323515 A JP 2000323515A
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JP
Japan
Prior art keywords
bonding
circuit board
lands
chip
wire
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP11131898A
Other languages
English (en)
Other versions
JP3887993B2 (ja
Inventor
Yukihiro Maeda
幸宏 前田
Takashi Nagasaka
長坂　　崇
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Denso Corp
Original Assignee
Denso Corp
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Publication date
Application filed by Denso Corp filed Critical Denso Corp
Priority to JP13189899A priority Critical patent/JP3887993B2/ja
Publication of JP2000323515A publication Critical patent/JP2000323515A/ja
Application granted granted Critical
Publication of JP3887993B2 publication Critical patent/JP3887993B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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Abstract

(57)【要約】 【課題】 複数のＩＣチップと回路基板とをワイヤボン
ディングで形成された導線によって電気的に接続する方
法において、ランドが酸化する前にランドへのボンディ
ングを行って接合性を確保する。 【解決手段】 複数のＩＣチップ３に対応するとともに
ワイヤボンディングの２次側となるすべてのランド４に
ついてバンプ６を形成するバンプ形成工程と、バンプ形
成工程の後、パッド３ａを１次側とし、バンプ６を２次
側としてワイヤボンディングを行って導線１０を形成
し、ＩＣチップ３および回路基板１とを電気的に接続す
るボンディング工程とを備える。これにより、複数のＩ
Ｃチップ３が設置されていても、最初にすべてのランド
４にボンディングを行うので、最後の方のランド４も酸
化する前にボンディングでき、ランド４とバンプ６との
接合性を確保できる。

Description

【発明の詳細な説明】
【０００１】
【発明の属する技術分野】本発明は、ＩＣチップの電極
と回路基板の電極とをワイヤボンディングで形成された
導線によって電気的に接続する方法に関する。
【０００２】
【従来の技術】ＩＣチップのパッドおよび回路基板（配
線基板）のランドとをＡｕワイヤ（導線）を用いたワイ
ヤボンディングにて電気的に接続する場合に、一般に、
回路基板上の配線材料がＣｕ等のようなＡｕワイヤとの
接合性の悪い材料であると、ランド上に直接ボンディン
グを行うことができないとされている。
【０００３】このような回路基板でＩＣチップの電極
（パッド）および回路基板の電極（ランド）とにワイヤ
ボンディングを行うには、まず、回路基板のランド上に
Ａｕワイヤにて予め接合性のよいボールボンディングを
行ってバンプを予め形成しておく。次に、ＩＣチップ上
のパッドに１次ボンディングを行い、続いてランド上に
形成しておいたバンプに２次ボンディングを行う。以上
の工程によって、Ａｕワイヤボンディングの接合性を確
保している。
【０００４】この方法によれば、回路基板のＣｕ等のラ
ンドとＡｕワイヤは接合性のよいボールボンディングで
接合し、さらにランド上のバンプとＡｕワイヤは通常の
ウェッジボンディングで同質同材のＡｕ同士の接合を行
うことによって良好な接合を得ることができる。
【０００５】
【発明が解決しようとする課題】上記の接続方法では、
Ａｕワイヤと被ボンディング材料とを超音波振動によっ
て固着させるだけでなく、熱を加えながらボンディング
を行うことにより両金属間の拡散による合金層形成を促
して接合性を得るという方法を用いている。従って、回
路基板およびＩＣチップはボンディング時において加熱
されている。このため、回路基板のランドとしてＣｕ等
の卑金属を用いる場合には、熱によりランドが必ず酸化
してしまう。
【０００６】このランドの酸化を防止してボンディング
を行う方法として、酸化が急速に進行しない程度の低温
（１００〜１２０℃程度）で回路基板等を加熱してボン
ディングする方法がある。ここで、従来行われているＩ
Ｃチップと回路基板との接続方法におけるボンディング
の順序を図４、５を用いて説明する。図４、５はＩＣチ
ップと回路基板とのボンディング順序を模式的に示した
ものであり、図中ＩＣチップ上のパッドおよび回路基板
上のランドは省略している。ボンディングの順序として
は、まず、図４（ａ）〜（ｅ）に示すように、回路基板
上のランドにボールボンディングによってバンプ６を形
成し、続いてＩＣチップ３上のパッドからバンプ６にワ
イヤボンディングを行って導線１０を形成する工程を繰
り返し行う方法があり、さらに、図５（ａ）〜（ｃ）に
示すように、１つのＩＣチップ３に対応するすべてのラ
ンドにボールボンディングを行ってバンプ６を形成した
後、ＩＣチップ３からランド上のバンプ６へのボンディ
ングを行って導線１０を形成する方法がある。
【０００７】しかしながら、これらいずれの方法におい
ても、回路基板上にワイヤボンディングすべきＩＣチッ
プが複数設置されておりボンディング点数が多数ある場
合には、ボンディングに時間がかかりすぎてしまい、上
記のように酸化が急速に進行しない程度の温度でボンデ
ィングを行ったとしても、最後の方のＩＣチップに対応
したランドにボールボンディングを行う前にランドが酸
化してしまう。
【０００８】従って、回路基板上に複数のＩＣチップが
設置されている場合には、ボンディングが進むにつれて
回路基板におけるまだボンディングが終わっていないラ
ンドが酸化されてしまい、ボールボンディングが接合で
きなくなってしまうという問題があった。本発明は、上
記点に鑑み、複数のＩＣチップと回路基板とをワイヤボ
ンディングで形成された導線によって電気的に接続する
方法において、ランドが酸化する前にランドへのボンデ
ィングを行って接合性を確保することを目的とする。
【０００９】
【課題を解決するための手段】本発明は、上記目的を達
成するために、請求項１記載の発明では、ワイヤボンデ
ィングの２次側となるすべてのランド（４）についてバ
ンプ（６）を形成するバンプ形成工程と、パッド（３
ａ）を１次側とするとともにバンプ（６）を２次側とし
てワイヤボンディングを行うことにより導線（１０）を
形成し、ＩＣチップ（３）および回路基板（１）とを電
気的に接続するボンディング工程とを備えることを特徴
としている。
【００１０】これにより、複数のＩＣチップ（３）が設
置されている回路基板（１）において、ＩＣチップ
（３）と回路基板（１）とをワイヤボンディングにて接
続する際に、まず最初にすべてのランド（４）について
ボンディングを行ってバンプ（６）を形成するので、最
後の方にボンディングするランド（４）についても酸化
する前にボンディングを行うことができ、ランド（４）
とバンプ（６）との接合性を確保することができる。
【００１１】また、回路基板（１）の表面温度が均一で
ない場合は、温度が高い位置にあるランド（４）から酸
化する。そこで、請求項２記載の発明では、回路基板
（１）における温度の高い位置にあるランド（４）から
温度の低い位置にあるランド（４）の順にバンプ（６）
を形成することを特徴としている。これにより、ランド
（４）が酸化する前に効率よくランド（４）にボンディ
ングを行うことができる。
【００１２】なお、上記各手段の括弧内の符号は、後述
する実施形態に記載の具体的手段との対応関係を示す一
例である。
【００１３】
【発明の実施の形態】以下、本発明を適用したＩＣチッ
プと回路基板との接続方法について図に基づいて説明す
る。図１および２は、本発明の第１実施形態に係るＩＣ
チップ３と回路基板１との接続方法を示す工程図であ
り、図３はボンディング後の回路基板を示している。な
お、図３ではＩＣチップ３上のパッド３ａを省略してい
る。以下、接続工程順に説明する。
【００１４】まず、回路基板（セラミック基板やプリン
ト基板などの基板）１を用意する。この回路基板１の一
面上には、ワイヤボンディングすべきＩＣチップ３が複
数設置されている。このＩＣチップ３は、ダイマウント
ペースト２（例えばはんだやＡｇペースト）により回路
基板１上にダイマウントされており、ＩＣチップ３上に
は、ＩＣチップ３の内部回路と電気的に接続されたパッ
ド３ａが設けられている。一方、回路基板１の一面上の
うちＩＣチップ３の設置領域と異なる部分には、Ｃｕ、
Ｎｉ、フラッシュＡｕめっき等のようにＡｕワイヤと接
合性の悪い配線材料を用いたランド４が形成されてい
る。
【００１５】次に、回路基板１上に形成されているすべ
てのＩＣチップ３におけるすべてのパッド３ａおよびこ
れらに対応するランド４の位置認識を画像処理装置によ
り行う。そして、図１（ａ）〜（ｄ）に示すように、こ
のランド４上に、Ａｕよりなる凸状のＡｕバンプ６を、
Ａｕワイヤ５を用いてボールボンディングにより形成す
る。これは、ＩＣチップ３のパッド３ａとランド４との
間をＡｕワイヤ５を用いてワイヤボンディングして後述
の導線１０を形成する場合に、Ａｕバンプ６と導線１０
とを同質材質のＡｕにより構成することにより、導線１
０の接合性を良くするためである。
【００１６】具体的には、図１（ａ）に示すように、キ
ャピラリ７の貫通孔７ａにＡｕワイヤ５を挿通した状態
で、トーチ電極８からの放電によりキャピラリ７から突
出したＡｕワイヤ５の先端にボール５ａを形成する。次
に、図１（ｂ）に示すように、キャピラリ７をランド４
上に位置させてボールボンディングを行う。このボール
ボンディングによってＡｕバンプ６を形成する。
【００１７】次に、図１（ｃ）に示すように、キャピラ
リ７を後方（Ａｕバンプ６に対しＩＣチップ３と反対側
の方向）に移動させてウェッジボンディングを行う。こ
のとき、キャピラリ７をランド４上に押しつけてＡｕバ
ンプ６から延びるＡｕワイヤ５を切断する。次に、再
度、キャピラリ７を上方に移動させ、図１（ｄ）に示す
ように、トーチ電極８からの放電により、Ａｕワイヤ５
の先端に第１のボール５ａを形成する。
【００１８】以上の図１（ａ）〜（ｄ）の工程を順次繰
り返し、複数のＩＣチップ３とのワイヤボンディングの
２次側となるすべてのランド４上にＡｕバンプ６を形成
していく。図３（ｂ）はすべてのランド４上にＡｕバン
プ６を形成した状態の配線基板１を示す。次に、図２
（ａ）に示すように、キャピラリ７の貫通孔７ａにＡｕ
ワイヤ５を挿通した状態で、トーチ電極８からの放電に
よりキャピラリ７から突出したＡｕワイヤ５の先端にボ
ール５ａを形成する。
【００１９】次に、図２（ｂ）に示すように、ＩＣチッ
プ３に形成されたパッド３ａ上にボールボンディング
（１次ボンディング）を行うとともに、図２（ｃ）に示
すように、上記工程で形成したランド４上のバンプ６に
ウェッジボンディング（２次ボンディング）を行う。こ
れにより、ＩＣチップ３のパッド３ａとランド４上のバ
ンプ６との間にＡｕよりなる上記導線１０が形成され、
ＩＣチップ３と回路基板１とが電気的に接続される。
【００２０】以上の図２（ａ）〜（ｃ）の工程を順次繰
り返して、複数のＩＣチップ３におけるすべてのパッド
３ａについてボンディングを行う。図４（ｃ）は、以上
の図２（ａ）〜（ｃ）の工程により、すべてのパッド３
ａにボンディングが終了した後の回路基板１を示してい
る。以上のように、本発明によれば、回路基板１上にワ
イヤボンディングすべきＩＣチップ３が複数設置されて
いる場合であっても、まず、ワイヤボンディングの２次
側となるすべてのランド４についてボンディングを行う
ことにより、まだボンディングの終わっていないランド
４が酸化する前にすべてのランド４にボンディングを行
うことができる。従って、ランド４とバンプ６との接合
性を確保することが可能となる。
【００２１】本発明者らの実験検討によれば、本実施形
態によるＩＣチップと回路基板との接合方法で、回路基
板１上のランド４が酸化する前に少なくとも１０００本
のワイヤボンディングを行うことが可能となることが確
認された。 （他の実施形態）ボンディングを行う際に、回路基板１
において温度のバラツキがある場合には、温度の高い位
置にあるランド４から先にボンディングを行うことによ
り、ランド４が酸化する前に効率よくボンディングを行
うことができる。
【００２２】具体的には、まず、ボンディング時におけ
る回路基板１の温度分布を予め測定しておく。そして、
この測定温度に基づいて回路基板１のうち温度の高い位
置に近いランド４から先にボンディングを行うようにす
る。
【図面の簡単な説明】
【図１】第１のボールにてランド上にバンプを形成する
手順を示す工程図である。
【図２】第２のボールにてパッドとバンプとを接続する
手順を示す工程図である。
【図３】ＩＣチップと配線基板とを接続する各段階にお
ける配線基板の状態を示す平面図である。
【図４】従来技術のＩＣチップと配線基板との接続手順
を示す工程図である。
【図５】従来技術のＩＣチップと配線基板との接続手順
を示す工程図である。
【符号の説明】
１…回路基板、３…ＩＣチップ、３ａ…パッド、４…ラ
ンド、５…Ａｕワイヤ、６…凸状のＡｕバンプ、１０…
導線。

Claims (2)

    【特許請求の範囲】
  1. 【請求項１】 複数のＩＣチップ（３）におけるパッド
    （３ａ）および回路基板（１）におけるランド（４）と
    をワイヤボンディングで形成された導線（１０）によっ
    て電気的に接続する方法であって、 前記複数のＩＣチップ（３）に対応するとともにワイヤ
    ボンディングの２次側となるすべての前記ランド（４）
    についてバンプ（６）を形成するバンプ形成工程と、 前記バンプ形成工程の後、前記パッド（３ａ）を１次側
    とするとともに前記バンプ（６）を２次側としてワイヤ
    ボンディングを行うことにより前記導線（１０）を形成
    し、前記ＩＣチップ（３）および前記回路基板（１）と
    を電気的に接続するボンディング工程とを備えることを
    特徴とするＩＣチップと回路基板との接続方法。
  2. 【請求項２】 前記バンプ形成工程は、前記回路基板
    （１）の表面温度が均一でない場合には、回路基板
    （１）における温度の高い位置にある前記ランド（４）
    から温度の低い位置にある前記ランド（４）の順にバン
    プ（６）を形成することを特徴とする請求項１記載の配
    線基板。
JP13189899A 1999-05-12 1999-05-12 Ｉｃチップと回路基板との接続方法 Expired - Fee Related JP3887993B2 (ja)

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JP2007287896A (ja) * 2006-04-17 2007-11-01 Nichia Chem Ind Ltd 半導体装置及びその製造方法
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US7176570B2 (en) 2002-02-19 2007-02-13 Seiko Epson Corporation Method for forming bump, semiconductor element having bumps and method of manufacturing the same, semiconductor device and method of manufacturing the same, circuit board, and electronic equipment
JP2007287896A (ja) * 2006-04-17 2007-11-01 Nichia Chem Ind Ltd 半導体装置及びその製造方法
JP2008147550A (ja) * 2006-12-13 2008-06-26 Denso Corp ワイヤボンディング方法
WO2020208850A1 (ja) * 2019-04-09 2020-10-15 株式会社カイジョー 絶縁被覆線の接合方法、接続構造、絶縁被覆線の剥離方法及びボンディング装置
CN112055889A (zh) * 2019-04-09 2020-12-08 株式会社海上 绝缘覆盖线的结合方法、连接构造、绝缘覆盖线的剥离方法以及接合装置
KR20210053961A (ko) * 2019-04-09 2021-05-12 가부시끼가이샤가이죠 절연 피복선의 접합 방법, 접속 구조, 절연 피복선의 박리 방법 및 본딩 장치
JPWO2020208850A1 (ja) * 2019-04-09 2021-09-13 株式会社カイジョー 絶縁被覆線の接合方法、接続構造、絶縁被覆線の剥離方法及びボンディング装置
JP7187127B2 (ja) 2019-04-09 2022-12-12 株式会社カイジョー 絶縁被覆線の接合方法、接続構造、絶縁被覆線の剥離方法及びボンディング装置
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