JP3855523B2 - Ｉｃチップと回路基板との接続方法 - Google Patents

Ｉｃチップと回路基板との接続方法 Download PDF

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Publication number
JP3855523B2
JP3855523B2 JP05611999A JP5611999A JP3855523B2 JP 3855523 B2 JP3855523 B2 JP 3855523B2 JP 05611999 A JP05611999 A JP 05611999A JP 5611999 A JP5611999 A JP 5611999A JP 3855523 B2 JP3855523 B2 JP 3855523B2
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wire
bonding
circuit board
chip
wiring
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JP05611999A
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JP2000252315A (ja
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撤男 中野
崇 長坂
幸宏 前田
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Denso Corp
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Denso Corp
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Description

【０００１】
【発明の属する技術分野】
本発明は、ＩＣチップの電極と回路基板の電極とをワイヤボンディングで形成されたＡｕよりなる導線によって電気的に接続する方法に関する。
【０００２】
【従来の技術】
この種のＩＣチップと回路基板（配線基板）との接続方法として、例えば特開平３−１８３１３９号公報に、予め回路基板の配線上にボールボンディングを行ってバンプを形成しておき、半導体チップのパッド上に１次ボンディングを行った後、上記バンプ上に２次ボンディングを行うという方法が記載されている。
【０００３】
一方、特開平４−２９３２４４号公報には、回路基板上の微細パターン（配線）に機械的押圧加工によって平坦部を形成し、この平坦部を利用してステッチボンディングを行うという方法が記載されている。
【０００４】
【発明が解決しようとする課題】
しかしながら、上記の前者公報の方法では、ボール状のバンプは凸状の半球形状のため、該バンプの上に２次ボンディングを行った場合、ワイヤ（導線）の接合性が悪くなる。
また、ボールボンディングを行ってバンプを形成するとき、Ａｕワイヤを上方へ引っ張ってバンプからＡｕワイヤを切り離すようにしているため、図４（ａ）に示す様に、バンプＪ１上にテールＪ２が発生し、バンプＪ１上に２次ボンディングを行うとき、バンプＪ１上のテールＪ２にＡｕワイヤＪ３が接合され、図４（ｂ）に示す様に、さらに大きなテールＪ４が発生することがある。
【０００５】
また、一般に、配線材料が例えばＣｕ、Ｎｉ、フラッシュＡｕめっき等のようにＡｕワイヤと接合性の悪い材料であると、配線上に直接ボンディングを行うことはできないとされている。上記の後者公報の方法では、回路基板上の微細パターン（配線）は、Ａｕワイヤのボンディングとは同質材質のものではないＣｕめっきのパターンであり、該Ｃｕめっきのパターンを機械的押圧加工によって平坦部にするだけであるため、ワイヤ（導線）の接合信頼性がどうしても落ちてしまう。
【０００６】
さらに、回路基板の表面上に酸化膜が生成していると、その生成状態によりボンディングにおいてバラツキが大きくなり、結果的に接続信頼性が悪くなる。
本発明は上記問題に鑑み、ＩＣチップと回路基板とをワイヤボンディングで形成されたＡｕよりなる導線によって電気的に接続する方法において、導線の接合性を向上させることを目的とする。
【０００９】
【課題を解決するための手段】
上記目的を達成するため、請求項１記載の発明においては、回路基板（１）のうちワイヤボンディングの２次側となる部分（４）の表面（４ａ）をＡｕよりなる線材（５）でこすることにより、該表面を清浄化すると共に該表面に薄いＡｕ膜（２１）を形成し、該Ａｕ膜を２次側としてワイヤボンディングを行うことにより導線（１０）を形成するようにしたことを特徴としている。
【００１０】
本発明によれば、ワイヤボンディングの２次側となる部分（４）の材料が、Ａｕよりなる導線（１０）と接合性の悪い材料であっても、予め回路基板（１）のうちワイヤボンディングの２次側となる部分（４）の表面（４ａ）に薄いＡｕ膜（２１）を形成するため、該導線と同じ材質である該Ａｕ膜に２次ボンディングを行うことができ、接合性が向上する。
【００１１】
また、このこすりつけた薄いＡｕ膜（２１）には凸状の突起が生じないため、従来のバンプが凸状の半球形状であることによる導線の接合性の悪化、２次ボンディングの際のバンプ上でのテール発生、といった問題もなくなる。
また、回路基板（１）のうちワイヤボンディングの２次側となる部分（４）の表面（４ａ）をＡｕよりなる線材（５）でこすることにより清浄化する工程によって、基板表面上の酸化膜を除去することが出来、接合信頼性が得られる。
【００１２】
従って、本発明によれば、導線（１０）の接合性を向上させることができる。
なお、上記各手段の括弧内の符号は、後述する実施形態に記載の具体的手段との対応関係を示す一例である。
【００１３】
【発明の実施の形態】
（参考形態）図１及び図２は、参考形態に係るＩＣチップと回路基板との接続方法を示す工程図であり、本接続方法は、最終的に図２（ｃ）に示す接続構造（部分断面図）を得るものである。なお、図１及び図２（ａ）、（ｂ）は、図２（ｃ）に対応した断面にて各接続工程の状態を示している。以下、接続工程順に説明する。
【００１４】
まず、図１（ａ）に示す様に、回路基板（セラミック基板やプリント基板などの基板もしくはリードフレーム）１を用意する。この回路基板１の一面上には、ダイマウントペースト２（例えばはんだやＡｇペースト）によりＩＣチップ３がダイマウントされ、ＩＣチップ３上には、ＩＣチップ３の内部回路と電気的に接続されたパッド３ａが設けられている。
【００１５】
一方、回路基板１の一面上のうちＩＣチップ３の設置領域と異なる部分には、Ｃｕ、Ｎｉ、フラッシュＡｕめっき等のようにＡｕワイヤと接合性の悪い配線材料を用いた配線４が形成されている。
そして、図１（ａ）〜（ｄ）に示す様に、この配線４上に、Ａｕよりなる凸状のＡｕバンプ６を、Ａｕワイヤ５を用いてボールボンディングにより形成する。これは、ＩＣチップ３のパッド３ａと配線４との間をＡｕワイヤ５を用いてワイヤボンディングし後述の導線１０を形成する場合に、Ａｕバンプ６と導線１０とを同質材質のＡｕより構成することにより、導線１０の接合性を良くするためである。
【００１６】
具体的には、図１（ａ）に示す様に、キャピラリ７の貫通孔７ａにＡｕワイヤ５を挿通した状態で、トーチ電極８からの放電によりキャピラリ７から突出したＡｕワイヤ５の先端にボール５ａを形成する。
次に、図１（ｂ）に示す様に、キャピラリ７を配線４上に位置させてボールボンディングを行う。このボールボンディングによってＡｕバンプ６を形成する。
【００１７】
次に、図１（ｃ）に示す様に、キャピラリ７を後方（Ａｕバンプ６に対しＩＣチップ３と反対側の方向）に移動させてウェッジボンディングを行う。この場合、キャピラリ７を配線４上に押しつけてＡｕバンプ６から延びるＡｕワイヤ５を切断する。
次に、図１（ｄ）に示す様に、キャピラリ７を上方に移動させ、トーチ電極８からの放電により、Ａｕワイヤ５の先端にボール５ａを形成する。以上これら図１（ａ）〜（ｄ）の工程を順次繰り返しＡｕバンプ６を必要箇所に形成していく。図２（ａ）は図１（ａ）〜（ｄ）のボールボンディング工程（凸状バンプ形成工程）終了後の状態を示す。
【００１８】
続いて、図２（ｂ）に示す機械的押圧加工工程を行う。凸状のＡｕバンプ６に、平坦面を有する治具９の該平坦面を接触させ、一定の荷重で押圧することにより、Ａｕバンプ６に回路基板１の一面と略平行な平坦面を有する平坦形状部６ａを形成する。本例では、Ａｕバンプ６全体を平板形状にリフォーミングする。そして、平坦形状部６ａを２次側としたワイヤボンディング工程（導線形成工程）を行うことにより、図２（ｃ）に示す接続構造を完成させる。即ち、Ａｕワイヤ５によりＩＣチップ３のパッド３ａにボールボンディング（一次ボンディング）を行うと共に、平坦形状部６ａにステッチボンディング（２次ボンディング）を行う。
【００１９】
このワイヤボンディング工程（導線形成工程）により、ＩＣチップ３のパッド３ａと平坦形状部６ａとの間にＡｕよりなる上記導線１０が形成され、ＩＣチップ３と回路基板１とが電気的に接続される。ところで、本参考形態によれば、２次側となる部分である配線４に形成された凸状のバンプ６を機械的押圧加工によって平坦形状とし、その平坦形状部６ａに２次ボンディングを行うようにしているため、従来のバンプが凸状の半球形状であることによる導線の接合性の悪化、２次ボンディングの際のバンプ上でのテール発生といった問題を防止することができる。
【００２０】
また、ワイヤボンディングの２次側となるバンプ６を、導線１０と同質材質のＡｕ（つまりＡｕワイヤ５）により形成しているため、導線１０とバンプ６の接合信頼性が悪いといった問題もなくなる。従って、本参考形態の製造方法によれば、導線１０の接合性を向上させることができる。なお、上記接続方法では、回路基板１の配線４をワイヤボンディングの２次側としたが、これとは逆に、ＩＣチップ３のパッド３ａをワイヤボンディングの２次側としてもよい。
（本発明の実施形態）図３は、本発明の実施形態に係るＩＣチップと回路基板との接続方法を示す工程図であり、本接続方法は、最終的に図３（ｃ）に示す接続構造（部分断面図）を得るものである。なお、図３（ａ）、（ｂ）は、図３（ｃ）に対応した断面にて各接続工程の状態を示し、図中、参考形態と同一部分には同一符号を付してある。以下、接続工程順に説明する。
【００２１】
まず、図３（ａ）に示す様に、上記参考形態と同様の回路基板１を用意する。この回路基板１の一面上には、接着剤２０によりＩＣチップ３がダイマウントされ、ＩＣチップ３上にはワイヤボンディングの１次側電極となるパッド３ａが設けられている。また、回路基板１の一面上にはワイヤボンディングの２次側の電極となる配線４が形成されている。
【００２２】
そして、図３（ａ）に示す様に、導線１０が接続される部分である配線４の表面４ａを、ＡｕよりなるＡｕワイヤ（本発明でいう線材）５で振動、荷重を加えてこすりつけ、該表面４ａを清浄化し、該表面４ａに存在する酸化生成膜（図示せず）を除去すると共に、図３（ｂ）に示す様に、薄いＡｕ膜２１を形成する（線材こすりつけ工程）。
【００２３】
このＡｕワイヤ５のこすりつけは、例えば、上記図１（ａ）に示すキャピラリ７自身を動かしたり、キャピラリ７から露出するＡｕワイヤ５の部分を他の治具で支持しながら該治具を動かすことで、Ａｕワイヤ５の先端のボール５ａにより配線４の表面４ａをこすりつけることによって、行うことができる。いずれにしろ、何らかの治具等を用いてこすりつけることができれば良く、その方法は限定されない。
【００２４】
次に、Ａｕ膜２１を２次側としたワイヤボンディング工程を行うことにより、図３（ｃ）に示す接続構造を完成させる。即ち、Ａｕワイヤ５によりＩＣチップ３のパッド３ａにボールボンディングを行うと共に、薄いＡｕ膜２１にステッチボンディングを行う（導線形成工程）。こうして、ＩＣチップ３のパッド３ａとＡｕ膜２１との間にＡｕよりなる上記導線１０が形成され、ＩＣチップ３と回路基板１とが電気的に接続される。
【００２５】
ところで、本実施形態によれば、配線４の材料が、Ａｕよりなる導線１０と接合性の悪い材料であっても、予め回路基板１のうちワイヤボンディングの２次側となる部分である配線４の表面４ａに薄いＡｕ膜２１を形成するため、導線１０と同じ材質であるＡｕ膜２１に２次ボンディングを行うことができ、接合性が向上する。
【００２６】
また、このこすりつけた薄いＡｕ膜２１には凸状の突起が生じないため、従来のバンプが凸状の半球形状であることによる導線の接合性の悪化、２次ボンディングの際のバンプ上でのテール発生といった問題もなくなる。
また、回路基板１のうちワイヤボンディングの２次側となる配線４の表面４ａをＡｕよりなる線材であるＡｕワイヤ５でこすることにより清浄化する工程によって、配線４の表面４ａ上の酸化膜を除去することが出来、接合信頼性が得られる。
【図面の簡単な説明】
【図１】参考形態に係る接続方法を示す工程図である。
【図２】図１に続く接続方法を示す工程図である。
【図３】本発明の実施形態に係る接続方法を示す工程図である。
【図４】従来の接続方法による２次ボンディング側の部分の拡大図である。
【符号の説明】
１…回路基板、３…ＩＣチップ、４…配線、４ａ…配線の表面、５…Ａｕワイヤ、６…凸状のＡｕバンプ、６ａ…平坦形状部、１０…導線、２１…Ａｕ膜。

Claims (1)

  1. ＩＣチップ（３）と回路基板（１）とをワイヤボンディングで形成されたＡｕよりなる導線（１０）によって電気的に接続する方法であって、
    前記回路基板のうちワイヤボンディングの２次側となる部分（４）の表面（４ａ）を、Ａｕよりなる線材（５）でこすることにより、該表面を清浄化すると共に該表面に薄いＡｕ膜（２１）を形成する工程と、
    前記Ａｕ膜を２次側としてワイヤボンディングを行うことにより前記導線を形成し、前記ＩＣチップと前記回路基板とを電気的に接続する工程、とを備えることを特徴とするＩＣチップと回路基板との接続方法。
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