JP3570551B2 - ワイヤボンディング方法 - Google Patents

ワイヤボンディング方法 Download PDF

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JP3570551B2
JP3570551B2 JP2001075346A JP2001075346A JP3570551B2 JP 3570551 B2 JP3570551 B2 JP 3570551B2 JP 2001075346 A JP2001075346 A JP 2001075346A JP 2001075346 A JP2001075346 A JP 2001075346A JP 3570551 B2 JP3570551 B2 JP 3570551B2
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bonding
wire
capillary
conductor
bump
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JP2002280410A (ja
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玉成 安田
玲 今井
祐次 小作
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Kaijo Corp
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Kaijo Corp
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Priority to TW91120240A priority patent/TW564538B/zh
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Description

【０００１】
【発明の属する技術分野】
本発明は、２つの導体間をワイヤボンディングするワイヤボンディング方法に関するものである。
【０００２】
【従来の技術】
ワイヤボンディングを行う場合、キャピラリー内にＡｕワイヤが挿通されたキャピラリーを用い、トーチ電極からの放電によりキャピラリーから突出したＡｕワイヤの先端にボールを形成し、キャピラリーを半導体チップ上に位置させ１次ボンディングを行った後、キャピラリーを配線上に移動させ２次ボンディングを行うことにより、半導体チップと配線間をワイヤボンディングする方法が一般的に用いられている。
【０００３】
この場合、配線材料が、例えばＣｕ、Ｎｉ、フラッシュＡｕめっき等のようにＡｕワイヤと接合性の悪い材料であると、配線上に直接ボンディングを行うことができないため、ボンディングを行う部分に、予めＡｇメッキあるいはＡｕ厚膜等の下地を形成するようにしている。
【０００４】
しかしながら、そのような下地を設けるのは実用上好ましくなく、配線材料がＡｕワイヤと接合性の悪い材料であっても、配線上に直接ボンディングできるようにする方法が望まれている。
【０００５】
たとえば特開平１０−１１２４７１号公報には、第２導体上にボールボンディングを行ってバンプを形成し、そのウエッジボンディングをバンプに対して第１導体と反対側の位置にて行った後、バンプに対し第１導体側からワイヤーをルーピングしてバンプ上に２次ボンディングを行い、第１導体と第２導体間をワイヤボンディングする方法が記載されている。
この方法によれば、ボールボンディングによりバンプを形成した後に、そのウエッジボンディングをバンプ後方の配線部上に行うので、ウエッジボンディングは屈曲した形状になり、バンプのテールの発生がなくなる。又、バンプ上に２次ボンディングを行う場合、バンプからのびるワイヤの屈曲部が貫通穴内に入り込むようにキヤピラリを位置させたとき、貫通孔の内壁により屈曲部が押され、ワイヤが貫通孔の多側の内壁にて押しつぶされた状態で接合される特徴を持っていると記載されている。
【０００６】
【発明が解決しようとする課題】
しかしながら、上記公報に掲載された方法では、バンプ形成後のウエッジボンディングとワイヤー部との接合になり、すなわち曲面同士での接合となり接合位置ずれを起こした場合、結果としてワイヤ曲がりを発生させ、隣り合うワイヤ間で接触が発生する。又、バンプ後のウエッジボンディングを後方へ湾曲形状に形成することにワイヤーテールの発生は抑制出来るが、ワイヤとバンプ接合において十分な傾斜、及び平面が確保出来ない為、図５波線で示した、バンプとワイヤを接合した後に発生するワイヤと回路基板との接触、ワイヤと配線間の接触を防止出来ない。従って、本発明は、バンプとワイヤ接合後のワイヤ部と回路基板との接触、及びワイヤと配線間との接触の発生を防止する。又、バンプとワイヤ接合時のワイヤ曲がりの発生を防止し、傾斜バンプ上面でワイヤとの接合を行うことを目的とする。
【０００７】
【課題を解決するための手段】
上記目的を達成するため、請求項１に記載の発明においては、第１導体上に１次ボンディングを行った後、第２導体上に２次ボンディングを行い、前記第１導体と前記第２導体間をワイヤボンディングする方法において、第２次導体上にボールボンディングを行いバンプを形成し、前記バンプの上部が平面となる傾斜ウエッジを形成するようにキャピラリーを動作させた後、前記１次ボンディングを行った後、前記バンプに対して前記１次導体側からワイヤをルーピングしてキャピラリー前記バンプ上部の傾斜ウエッジ上に位置させ、キャピラリの外壁面によりワイヤを傾斜ウエッジ部に押し付けて、前記第２次ボンディングを行うことを特徴とするワイヤボンディング方法。
【０００８】
また、請求項２に記載の発明は、貫通孔にワイヤが挿通されたキャピラリーを用いて、第１導体上に１次ボンディングを行った後、第２導体上に２次ボンディングを行い、前記第１導体と前記第２導体間をワイヤボンディングする方法において、前記キャピラリーを前記第２導体上に位置させてボールボンディングを行い、前記第２導体上にバンプを形成した後、前記キャピラリーを上方へ移動させた後に、前記キャピラリーを第１導体と反対側の位置に移動させ、再度前記キャピラリーを下方に移動させ上部が平面となる傾斜ウエッジを形成させた後にワイヤを切断し、前記１次ボンディングを行った後、前記キャピラリーを前記バンプ上方の傾斜ウエッジ上に位置させ前記キャピラリー内から延びるワイヤを前記キャピラリーの先端付近の外壁面で前記バンプ上部の傾斜ウエッジとワイヤと接合し、その接合部で前記キャピラリー内のワイヤを切断して、前記２次ボンディングを行うことを特徴とするワイヤボンディング方法。
【０００９】
請求項３に記載の発明は、請求項１又は２記載のワイヤボンディングする方法において、前記傾斜ウエッジの傾斜角は２°〜１５°の範囲であることを特徴としている。
【００１０】
【発明の実施の形態】
図１に本発明の一実施形態に係るワイヤボンディング方法を用いて半導体チップと配線間をワイヤボンディングした状態を示す。回路基板（セラミック基板やプリント基板等の基板、又はリードフレーム）１の上に、ダイマウントペースト２により半導体チップ３がマウントされている。又、回路基板１の上には、Ｎｉ、Ｃｕ等のＡｕワイヤ５と接合性の悪い配線材料を用いたベースが形成されている。
【００１１】
次に本発明の一実施形態に係るワイヤボンディング方法について図２に沿って説明する。図２（ａ）の行程では、キャピラリー７の貫通孔７ａにワイヤ５を挿通した状態で、電気トーチ８によりキャピラリー７から突出したワイヤ５の先端にボール５ａを形成する。図２（ｂ）の行程でキヤピラリー７を配線部４上に位置させてボールボンディングを行う。このボンディングによりバンプ６を形成する。図２（ｃ）〜（ｄ）の行程では、キヤピラリー７を上昇させた後に、バンプ６の中心から第１導体側と反対方向へ移動させ、その後に再度キャピラリー７を下方に押し下げキャピラリー外壁面７ｂで傾斜ウエッジ９をバンプ６上部に形成し、ワイヤ５を切断する。この傾斜ウエッジ９は、バンプ６上部に形成される。バンプ６上部の傾斜ウエッジボンディング部９の傾斜角度は、２〜１５度にすることによりボンディングパット３ａからバンプ６上部の傾斜ウエッジボンディング部へワイヤボンディングする時の案内角度となり、Ｕ字状のタレが起きないことが実験からわかった。図３のθがこの角度である。図２（ｅ）の行程では、電気トーチ８によりワイヤ５の先端にボール５ａを形成させる。図２（ｆ）の行程においては、キャピラリー７を半導体チップ３のボンディングパット上３ａに位置させ、１次ボンディングを行う。図２（ｇ）の行程では、ワイヤ５のループピングを行い、ワイヤ５をバンプ６の傾斜部ウエッジボンディング部９の上部に位置させ、キャピラリー７の外壁面７ｂでルーピングワイヤ５と傾斜ウエッジボンディング部９を接合させ、ワイヤ５を切断する。図３は上記（ｇ）の行程におけるワイヤと傾斜ウエッジとの接合時の拡大図面である。上記におけるワイヤ接合方法は、超音波印加手段によるものである。
【００１２】
【発明の効果】
上記したワイヤボンディング方法によれば、バンプ上部に形成した平坦な面の傾斜ウエッジが、１次導体から２次導体にワイヤループ接続時に案内面となり，ワイヤと半導体チップ、ワイヤとパット間の接触を防止出来る。又、バンプ上部のウエッジボンディングが平坦な面になるため、従来のようなワイヤとワイヤでの接合時に発生するワイヤ曲がりが無くなり、結果としてワイヤボンディング後の隣り合うワイヤ間でのショートが無くなる。さらに、バンプ上部のウエッジボンディングが傾斜平面形状を形成するのでウエッジボンディング後のワイヤ残りが無くなり、半導体パッケージングを薄くすることが出来る。又傾斜ウエッジ面が平坦面であるので、接合面積を拡大でき、接合強度を高くすることも可能になる。
【図面の簡単な説明】
【図１】本発明の一実施形態に係るワイヤボンディング方法を用いて半導体チップと配線間がワイヤボンディングされた状態を示す図面である。
【図２】本発明の接合行程を説明するための図面である。
【図３】本発明のバンプ上部の傾斜ウエッジ上に２次ボンディングを行う場合の説明図である。
【図４】従来の実施図面である。
【図５】従来の問題を説明するための図である。
【符号の説明】
１ 回路基板
２ ダイマウントペースト
３ 半導体チップ
３ａ ボンディングパット
４ 配線
５ ワイヤ
５ａ ボール
６ バンプ
６ａ 屈曲部
７ キャピラリー
７ａ 貫通孔
７ｂ 外壁面
８ トーチ電極
９ 傾斜ウエッジ部

Claims (3)

  1. 第１導体上に１次ボンディングを行った後、第２導体上に２次ボンディングを行い、前記第１導体と前記第２導体間をワイヤボンディングする方法において、第２次導体上にボールボンディングを行いバンプを形成し、前記バンプの上部が平面となる傾斜ウエッジを形成するようにキャピラリーを動作させた後、前記１次ボンディングを行った後、前記バンプに対して前記１次導体側からワイヤをルーピングしてキャピラリーを前記バンプ上部の傾斜ウエッジ上に位置させ、キャピラリの外壁面によりワイヤを傾斜ウエッジ部に押し付けて、第２次ボンディングを行うことを特徴とするワイヤボンディング方法。
  2. 貫通孔にワイヤが挿通されたキャピラリーを用いて、第１導体上に１次ボンディングを行った後、第２導体上に２次ボンディングを行い、前記第１導体と前記第２導体間をワイヤボンディングする方法において、前記キャピラリーを前記第２導体上に位置させてボールボンディングを行い、前記第２導体上にバンプを形成した後、前記キャピラリーを上方へ移動させた後に、前記キャピラリーを第１導体と反対側の位置に移動させ、再度前記キャピラリーを下方に移動させ上部が平面となる傾斜ウエッジを形成させた後にワイヤを切断し、前記１次ボンディングを行った後、前記キャピラリーを前記バンプ上方の傾斜ウエッジ上に位置させ前記キャピラリー内から延びるワイヤを前記キャピラリーの先端付近の外壁面で前記バンプ上部の傾斜ウエッジとワイヤと接合し、その接合部で前記キャピラリー内のワイヤを切断して、前記２次ボンディングを行うことを特徴とするワイヤボンディング方法。
  3. 前記傾斜ウエッジの傾斜角は２°〜１５°の範囲であることを特徴とする請求項１又は２記載のワイヤボンディング方法。
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US7808116B2 (en) 2007-02-21 2010-10-05 Kabushiki Kaisha Shinkawa Semiconductor device and wire bonding method

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JP3573133B2 (ja) 2002-02-19 2004-10-06 セイコーエプソン株式会社 半導体装置及びその製造方法、回路基板並びに電子機器
JP3584930B2 (ja) 2002-02-19 2004-11-04 セイコーエプソン株式会社 半導体装置及びその製造方法、回路基板並びに電子機器
JP2004247674A (ja) 2003-02-17 2004-09-02 Shinkawa Ltd ワイヤボンディング方法
JP4106008B2 (ja) 2003-09-22 2008-06-25 株式会社新川 ワイヤボンディング方法及び装置
JP4558539B2 (ja) * 2005-03-09 2010-10-06 日立協和エンジニアリング株式会社 電子回路用基板、電子回路、電子回路用基板の製造方法および電子回路の製造方法
JP5048990B2 (ja) * 2006-10-16 2012-10-17 株式会社カイジョー 半導体装置及びその製造方法
JP2008263210A (ja) * 2008-05-16 2008-10-30 Mitsubishi Electric Corp 電力用半導体装置
JP4625858B2 (ja) * 2008-09-10 2011-02-02 株式会社カイジョー ワイヤボンディング方法、ワイヤボンディング装置及びワイヤボンディング制御プログラム

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7808116B2 (en) 2007-02-21 2010-10-05 Kabushiki Kaisha Shinkawa Semiconductor device and wire bonding method

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