TW564538B - Wire bonding method, method of forming bump and bump - Google Patents

Wire bonding method, method of forming bump and bump Download PDF

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Publication number
TW564538B
TW564538B TW91120240A TW91120240A TW564538B TW 564538 B TW564538 B TW 564538B TW 91120240 A TW91120240 A TW 91120240A TW 91120240 A TW91120240 A TW 91120240A TW 564538 B TW564538 B TW 564538B
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TW
Taiwan
Prior art keywords
conductor
bump
capillary
wire
inclined surface
Prior art date
Application number
TW91120240A
Other languages
Chinese (zh)
Inventor
Rei Imai
Tamanari Yasuda
Shinobu Ishii
Yuji Kosaku
Original Assignee
Kaijo Kk
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Publication date
Priority claimed from JP2001075346A external-priority patent/JP3570551B2/en
Priority claimed from JP2002231931A external-priority patent/JP3913134B2/en
Application filed by Kaijo Kk filed Critical Kaijo Kk
Application granted granted Critical
Publication of TW564538B publication Critical patent/TW564538B/en

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Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484Connecting portions
    • H01L2224/48475Connecting portions connected to auxiliary connecting means on the bonding areas, e.g. pre-ball, wedge-on-ball, ball-on-ball
    • H01L2224/48476Connecting portions connected to auxiliary connecting means on the bonding areas, e.g. pre-ball, wedge-on-ball, ball-on-ball between the wire connector and the bonding area
    • H01L2224/48477Connecting portions connected to auxiliary connecting means on the bonding areas, e.g. pre-ball, wedge-on-ball, ball-on-ball between the wire connector and the bonding area being a pre-ball (i.e. a ball formed by capillary bonding)
    • H01L2224/48478Connecting portions connected to auxiliary connecting means on the bonding areas, e.g. pre-ball, wedge-on-ball, ball-on-ball between the wire connector and the bonding area being a pre-ball (i.e. a ball formed by capillary bonding) the connecting portion being a wedge bond, i.e. wedge on pre-ball
    • H01L2224/4848Connecting portions connected to auxiliary connecting means on the bonding areas, e.g. pre-ball, wedge-on-ball, ball-on-ball between the wire connector and the bonding area being a pre-ball (i.e. a ball formed by capillary bonding) the connecting portion being a wedge bond, i.e. wedge on pre-ball outside the semiconductor or solid-state body
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/85009Pre-treatment of the connector or the bonding area
    • H01L2224/85051Forming additional members, e.g. for "wedge-on-ball", "ball-on-wedge", "ball-on-ball" connections
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01005Boron [B]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01028Nickel [Ni]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01029Copper [Cu]

Abstract

A wire bonding method, a method of forming bump and a bump are provided to prevent contacts between a wire and a circuit board and between the wire and wirings on the circuit board after the wire and a bump are bonded together, and to prevent the occurrence of wire bending while bonding the wire and the bump. While bonding a wire 50 between a first conductor 10 and a second conductor 20, a bump 51a is priorly formed on the second conductor 20 in a way of ball bonding, a capillary 40 is then driven to move along a predetermined path so as to form an inclined surface 51c at the top of the bump 51a. The wire 50 is looped from the first conductor 10 toward the bump 51a after a first bonding is performed on the first conductor 10, then a second bonding is performed on the inclined surface 51c.

Description

564538 五、發明說明(1) [發明所屬之技術領域] 本發明為關於將線(w i r e )連接在2個導體間的絲焊 (wire bonding)方法以及其時之凸塊形成方法及凸塊,特 別是有關於在第1導體上進行1次接合,並在第2導體上進 行2次接合,以將線連接在第1導體及第2導體之間時,為 了使經絲焊的線不與其他之線接觸或與電路基板面接觸, 以球焊(bal 1 bonding)方式預先在第2導體上形成合適形 狀的凸塊才進行之絲焊方法,以及形成上述合適形狀的凸 塊之方法及凸塊。 [先前技術] 進行絲焊時’使用插穿有金(Au )線於毛細管内的毛細 管,以來自氣炬電極之放電在從毛細管突出的八认線之前端 形成球,並使毛細管位在半導體晶片上進行丨次接合後, 使毛細管移動至配線上進行2次揍合,藉以將AU線連接於 半導體晶片與配線之間為一般所採用的方法。 、 在此狀況,配線材料為例如銅(Cu)、鎳(Ni)、閃鍍金 (flash gold plating)等與Au線的接合性不好的材料^, 不能在配線上進行直接接合,故在進行接合的部分,乃 先形成鍍銀或銅厚膜等之底子。 然而,設置如此的底子在實用上並不理想,因而希望 有即使配線材料為與Au線的接合性不好的材料, 直接接合於配線上的方法。 ]此將之 例如’於日本國特開平1〇_ 1 1 247 1號公報,記载有如 第10圖所示,在電路基板30之第2導體20上進行球焊來开3564538 V. Description of the invention (1) [Technical field to which the invention belongs] The present invention relates to a wire bonding method for connecting a wire between two conductors, and a bump forming method and a bump at that time. In particular, when the first conductor is bonded once and the second conductor is bonded twice to connect the wire between the first conductor and the second conductor, in order to prevent the wire-bonded wire from contacting Other wire bonding methods, such as wire bonding or surface contact with a circuit substrate, which are performed by forming a bump of a suitable shape on the second conductor in advance by ball bonding, and a method of forming the bump of a suitable shape, and Bump. [Prior art] When wire bonding is used, a capillary with a gold (Au) wire inserted in the capillary is used to form a ball at the front end of the eight-wire line protruding from the capillary with a discharge from the gas torch electrode, and the capillary is positioned on the semiconductor After the bonding is performed once on the wafer, the capillary is moved to the wiring and coupled twice, so that the AU line is connected between the semiconductor wafer and the wiring, which is a commonly used method. In this situation, the wiring material is, for example, copper (Cu), nickel (Ni), flash gold plating and other materials with poor adhesion to the Au wire ^, cannot be directly bonded on the wiring, so The jointed part is first formed with a silver-plated or copper-thick film. However, it is not practically ideal to provide such a substrate. Therefore, a method of directly bonding the wiring to the wiring even if the wiring material is a material having poor adhesion to the Au wire is desired. ] This will be described, for example, in Japanese Unexamined Patent Publication No. 10_ 1 1 247 1 which describes that as shown in FIG. 10, ball bonding is performed on the second conductor 20 of the circuit board 30 to open 3

第9頁 313975.ptd 564538 五、發明說明(2) 成凸塊5 1 a,接著在凸塊5 1 a之與第1導體1 〇相反側之位置 進行楔形接合(wedge bonding)後,在第1導體1〇上進行1 次接合’然後將線5 0從第1導體1 〇侧向凸塊$ 1 a迴繞而後在 凸塊51a上進行2次接合,以將線連接在第i導體1〇及第2導 體2 0之間的方法。 依此方法,以球焊方式形成凸塊後,在凸塊後方(與 凸塊之第1導體所在位置側相反側之位置)之第2導體上進 行楔形接合,故楔形接合變成彎曲的形狀,不會產生凸塊 之曳尾。 曰 又,記載有在凸塊上進行2次接合時,如第丨丨圖所 不丄使毛細管40位在從凸塊51诞伸的線5〇之彎曲部5U進 二Π =貫通孔41内的位置時,利用貫通孔41之-側 曲部51b,而以將線5〇壓扁於貫通孔41之另一 側内壁的狀態使兩者接合。 [發明内容] 塊形ί彳^的f载於上述公報的方法係如第1 1圖所示’為凸 合,i 形接合與線部之接合,亦即為曲面間之接 鄰線A = ^合位置偏移時,會有線彎曲之結果,而有相 Μ線間產生接觸之慮。 另不 形狀又雖2於將凸塊形成後之楔形接合形成為向後方彎曲 保充分的倾二抑制產生線戈尾,但線及凸塊之接合不能確 防止在=及平®’故如第11圖點線所示,不能充分地 的接觸^ t塊51a及線50後所產生之線50與電路基板30 ^ 線5 0與配線之間的接觸。Page 9 313975.ptd 564538 V. Description of the invention (2) The bump 5 1 a is formed, and then wedge bonding is performed on the opposite side of the bump 5 1 a from the first conductor 1 〇, and then 1 conductor 10 is bonded once ', then the wire 50 is wound from the side of the first conductor 10 to the bump $ 1a, and then bonded twice on the bump 51a to connect the wire to the i-th conductor 1〇 And the second conductor 20. According to this method, after the bump is formed by ball welding, a wedge joint is performed on the second conductor behind the bump (position opposite to the first conductor position of the bump), so the wedge joint becomes a curved shape. No bump trailing. In other words, it is recorded that when the two joints are performed on the bumps, as shown in FIG. 丨, the capillary 40 is positioned in the curved portion 5U of the line 50 extending from the bump 51 into the second through-hole 41. At the position, the side-curved portion 51b of the through-hole 41 is used to join the two with the wire 50 pressed against the inner wall of the other side of the through-hole 41. [Summary of the invention] The method of f in the above block is shown in Fig. 11 as 'Fig. 11' is convex, i-shaped joints are connected with the line, that is, the adjacent line A between the curved surfaces A = When the combined position is shifted, there will be the result of line bending, and there is a concern of contact between the phase M lines. In addition, although the wedge joint after the bumps are formed is formed to be bent backward to ensure sufficient inclination to suppress the occurrence of line tails, but the connection between the wire and the bumps cannot be prevented accurately. As indicated by the dotted line in FIG. 11, the contact between the line 50 and the circuit board 30 ^ line 50 and the wiring generated after the block 51a and the line 50 cannot be sufficiently contacted.

313975.Ptd 第10頁 564538 五、發明說明(3) 本發明之課題係在於提供絲焊方法、凸塊的形成方法 及凸塊,其於凸塊與線之接合後可以防止線與電路基板發 生接觸,以及線與配線之間發生接觸,且可以防止凸塊與 線接合時線彎曲之發生。 為了解決上述課題,本發明採用了如次的方法。 本發明之絲焊方法,係將線連接在第1導體及第2導體 之間的方法,包括:在該第2導體上以球焊方式形成凸塊 之步驟;在該凸塊之上部形成傾斜面之步驟;進行1次接 合以將線之一端連接於該第1導體之步驟;以及將線從該 第1導體向該第2導體上之凸塊迴繞而後進行2次接合以將 線之另一端連接於該凸塊上部之傾斜面上之步驟。 又,本發明之絲焊方法,係使用貫通孔插穿有線之毛 細管,將線連接在第1導體及第2導體之間的方法,包括: 藉由使毛細管位在該第2導體上來進行球焊,以在該第2導 體上形成凸塊之步驟;使該毛細管向上方移動後,使該毛 細管朝與該第1導體相反側之位置橫向移動,再使該毛細 管下降來切斷該線以在該凸塊之上部形成傾斜面之步驟; 進行1次接合以將該線之一端連接於該第1導體之步驟;以 及進行2次接合,使該毛細管位於該凸塊上部之傾斜面, 再用該毛細管之底部將從該毛細管内延伸出的線連接於該 凸塊上部之傾斜面,並在該接合部近旁將該線切斷之步 在本發明之絲焊方法的較佳實施形態中,該凸塊上部 之傾斜面係形成為平面或凹面,該2次接合步驟包含使該313975.Ptd Page 10 564538 V. Description of the invention (3) The object of the present invention is to provide a wire bonding method, a bump formation method and a bump, which can prevent the occurrence of a wire and a circuit substrate after the bump and the wire are bonded. Contact, and contact between the wire and the wiring, and can prevent the bending of the wire when the bump and the wire are bonded. In order to solve the above problems, the present invention adopts the following method. The wire bonding method of the present invention is a method for connecting a wire between a first conductor and a second conductor, and includes the steps of forming a bump on the second conductor by ball bonding; and forming a slope on the upper portion of the bump. Surface step; a step of bonding once to connect one end of the wire to the first conductor; and a step of winding the wire from the first conductor to a bump on the second conductor and then performing a second joint to wire the other A step of connecting one end to an inclined surface on the upper portion of the bump. The wire bonding method of the present invention is a method of using a through-hole to penetrate a wired capillary tube and connecting a wire between a first conductor and a second conductor. The method includes: performing a ball by placing a capillary tube on the second conductor. Soldering to form a bump on the second conductor; after the capillary is moved upward, the capillary is moved laterally to a position opposite to the first conductor, and the capillary is lowered to cut the wire to A step of forming an inclined surface on the upper portion of the bump; a step of performing a bonding to connect one end of the wire to the first conductor; and a second bonding so that the capillary is located on the inclined surface of the upper portion of the bump, and The bottom of the capillary is used to connect a line extending from the capillary to the inclined surface of the upper portion of the bump, and the step of cutting the line near the joint is in a preferred embodiment of the wire bonding method of the present invention. , The inclined surface of the upper part of the bump is formed as a flat surface or a concave surface, and the two joining steps include making the

313975.ptd 第11頁 564538 五、發明說明(4) 毛細管位於該凸塊上部之傾斜面,及用該毛細管之底部將 線壓接於該凸塊上部之傾斜面。 又,本發明之絲焊方法的較佳實施形態中,該凸塊上 部之傾斜面,係以連結該傾斜面之兩端部的直線相對於該 第2導體面所成的傾斜角成為向該第1導體之2°至60°之 張角的方式形成。 再者,本發明之凸塊的形成方法,係在第1導體上進 行1次接合,並在第2導體上進行2次接合,以將線連接於 第1導體及第2導體之間時,預先在第2導體上以球焊方式 形成凸塊的方法,包括:使毛細管下降至該第2導體上, 將形成在線前端的球連接於該第2導體上來形成凸塊之步 驟;其後,使該毛細管垂直上昇之步驟;其後,使該毛細 管朝與該第1導體所在位置的方向相反的方向橫向移動之 步驟;其後,使該毛細管下降而使該毛細管之底部壓接於 該凸塊之步驟;以及其後,使該毛細管朝該第1導體之方 向橫向移動之步驟,而在該凸塊之上部設置傾斜面。 又,本發明之凸塊的形成方法,係在第1導體上進行1 次接合,並在第2導體上進行2次接合,以將線連接於第1 導體及第2導體之間時,預先在第2導體上以球焊方式形成 凸塊的方法,包括:使毛細管下降至該第2導體上,將形 成在線前端的球連接於該第2導體上來形成凸塊之步驟; 其後,使該毛細管垂直上昇之步驟;其後,使該毛細管朝 該第1導體所在位置的方向橫向移動之步驟;其後,使該 毛細管垂直上昇之步驟;其後,使該毛細管朝與該第1導313975.ptd Page 11 564538 V. Description of the invention (4) The capillary is located on the inclined surface of the upper part of the bump, and the bottom of the capillary is used to crimp the wire to the inclined surface of the upper part of the bump. Further, in a preferred embodiment of the wire bonding method of the present invention, the inclined surface of the upper portion of the bump is such that an inclined angle formed by a straight line connecting both ends of the inclined surface with respect to the second conductor surface is directed toward the second conductor surface. The first conductor is formed with an opening angle of 2 ° to 60 °. Furthermore, in the method for forming a bump of the present invention, when the first conductor is bonded once and the second conductor is bonded twice to connect the wire between the first conductor and the second conductor, A method of forming bumps on the second conductor by ball bonding in advance includes the steps of lowering a capillary tube onto the second conductor and connecting a ball formed at the front end of the wire to the second conductor to form a bump; thereafter, A step of vertically raising the capillary; thereafter, a step of laterally moving the capillary in a direction opposite to a direction where the first conductor is located; and thereafter, lowering the capillary to press the bottom of the capillary to the protrusion And a step of laterally moving the capillary tube in the direction of the first conductor, and an inclined surface is provided on an upper portion of the bump. In addition, in the method for forming a bump of the present invention, the first conductor is bonded once and the second conductor is bonded twice to connect the wire between the first conductor and the second conductor in advance. A method of forming a bump on the second conductor by ball bonding includes the steps of lowering a capillary tube onto the second conductor and connecting a ball formed at the front end of the wire to the second conductor to form a bump; A step of vertically rising the capillary; a step of laterally moving the capillary in a direction toward the position of the first conductor; a step of vertically rising the capillary; and a step of moving the capillary toward the first guide

第12頁 313975.ptd ^>04538 、發明說明(5) 該 以 移 所在位置的方向相 ^ 毛細管下降而使哕毛細*向杈向移動之步驟;其後,使 及其後,使該毛;:管朝:Jf::壓接於該凸塊之步驟; 動之步驟,而在該几檢"弟丨¥體所在位置的方向橫向 本發明凸塊的^方^上部設置傾斜面。 部之傾斜面,係'以遠ί : 之較佳實施形態中,該凸塊上 第2導體面所成的傾連钭斜面之兩端部的直線相對於該 張角的方式形成。、角成為向該第1導體之2。至6〇。之 在第2導體上進行月2: : 土係在第1導體上進行1次接合,並 體之間時,預先在;以將f連接於第1導體及第2導 具備有形成為平面或凹面的上面,胃上面係以連結 兮篦1而道的直線相對於該第2導體面所成的傾斜角成為向 t第1導體之2。至60。之張角的方式形成。 [貫施方式] 、以下’根據圖式之實施形態具體說明本發明。所附圖 式之各圖中相同之元件符號係表示相等部分者。 第1圖顯示使用有關本發明之一實施形態的絲焊(w i re bonding)方法將線連接於半導體晶片及配線之間的狀態。 由陶瓷基板或印刷電路基板等之基板或引線框架 (lead frame)等所構成之電路基板30上,透過晶片安裝膏 (Die mount ing paste) 6安裝有半導體晶片8。該半導體晶 片8上形成有接合塾(Bonding pad)(第1導體)10。又,電 路基板3 0上形成有使用與Au線5 0的接合性不好的N i、Cu等Page 12 313975.ptd ^ &045; 4538, description of the invention (5) The step of moving the capillary in the direction of the position where the capillary is moved to make the hairs thin * toward the branch; thereafter, and thereafter, the hair ;: Tube facing: Jf :: crimping the step of the bump; moving step, and in the direction of the position of the inspection " brother " position of the body transversely ^ square ^ upper part of the bump of the present invention is provided with an inclined surface. The inclined surface of the part is formed in a preferred embodiment, in which straight lines at both ends of the inclined continuous inclined surface formed by the second conductor surface on the bump are formed with respect to the opening angle. The angle becomes 2 toward the first conductor. To 60. It is performed on the second conductor on the second conductor: When the soil system is bonded once on the first conductor, and the body is connected in advance, the f conductor is connected to the first conductor and the second conductor and has a flat or concave surface. The inclination angle formed by the straight line connecting the upper surface of the stomach and the upper surface of the stomach with respect to the second conductor surface becomes 2 of the first conductor toward t. To 60. Form the angle. [Embodiment Mode] The following is a detailed description of the present invention based on the embodiments of the drawings. The same reference numerals in the drawings indicate equal parts. FIG. 1 shows a state where a wire is connected between a semiconductor wafer and a wiring by a wire bonding method according to an embodiment of the present invention. A semiconductor wafer 8 is mounted on a circuit board 30 made of a substrate such as a ceramic substrate, a printed circuit board, or a lead frame, etc., through a die mounting paste 6. A bonding pad (first conductor) 10 is formed on the semiconductor wafer 8. In addition, Ni, Cu, etc., which have poor adhesion to the Au wire 50, are formed on the circuit substrate 30.

313975.ptd 第13頁 564538 五、發明說明(6) 的配線材料之作為第2導體之配線2 〇。 其次按照第2A圖至第2G圖說明關於本發明一實施形熊 的絲焊方法。 首先如第2A圖所示,在線5〇插穿過毛細管 (capillary) 40之貫通孔41的狀態,利用電氣氣炬6〇在從 毛細管4 0突出的線5 0前端形成球5卜 其次如第2 B圖所示,使毛細管4 0下降至配線2 〇上,於 配線2 0上進行形成在線5 0前端的球5 1之球焊(b a 1 1 bonding)。並藉由該球焊形成凸塊51a。 接者’使毛細官4 0上幵之後’如苐2 C圖所示,使毛細 管4 0從凸塊5 1 a之中心朝與作為第1導體的接合墊1 〇所在位 置的方向相反的方向橫向移動。其後如第2 D圖所示,再度 將毛細管4 0往下方壓使毛細管4 0之底部4 2壓接於凸塊5 1 a 面,以在凸塊5 1 a上部形成傾斜面5 1 c,並將線5 0切斷。 如上述方式形成的凸塊5 1 a係如第3圖所示,藉由使凸 塊5 1 a上部的傾斜面5 1 c相對於作為第2導體的配線2 0之面 的傾斜角0為2°至6 0°之張角,以在將來自接合墊1 〇之 線連接至凸塊5 1 a上部之傾斜面5 1 c時成為線5 0之導引,如 此經實驗後發現線5 〇即不會形成U字狀之下垂。 其後如第2 E圖所示,利用電氣氣炬6 0在線5 0之前端形 成球5 2。然後如第2 F圖所示,使毛細管4 0位於半導體晶片 8之接合墊1 0上,進行1次結合。 其次如第2 G圖所示,進行起自接合墊1 〇之線5 0的迴 繞,然後使線5 0位於凸塊5 1 a上部之傾斜面5 1 c的上部,用313975.ptd Page 13 564538 V. Description of the invention (6) The wiring material 2 as the second conductor. Next, a method for wire bonding a bear according to an embodiment of the present invention will be described with reference to Figs. 2A to 2G. First, as shown in FIG. 2A, the state where the wire 50 is inserted through the through hole 41 of the capillary 40 is formed by an electric torch 60, and a ball 5 is formed at the front end of the wire 50 protruding from the capillary 40. As shown in FIG. 2B, the capillary 40 is lowered onto the wiring 20, and ball bonding (ba 1 1 bonding) is performed on the wiring 20 to form a ball 51 at the front end of the wire 50. The bumps 51a are formed by the ball welding. As shown in Fig. 2C, the capillary "from the center of the bump 5 1a" is opposite to the position where the bonding pad 10, which is the first conductor, is positioned. Move laterally. Thereafter, as shown in FIG. 2D, the capillary 40 is pressed downward again to crimp the bottom 4 2 of the capillary 40 to the surface of the bump 5 1 a to form an inclined surface 5 1 c on the upper portion of the bump 5 1 a. And cut the line 50. The bump 5 1 a formed as described above is shown in FIG. 3, and the inclination angle 0 of the inclined surface 5 1 c at the upper portion of the bump 5 1 a with respect to the plane of the wiring 20 that is the second conductor is 0 The opening angle of 2 ° to 60 ° is used as a guide for the line 50 when the line from the bonding pad 1 〇 is connected to the inclined surface 5 1 c on the upper part of the bump 5 1 a. Thus, the line 5 〇 is found after the experiment. That is, no U-shaped sagging is formed. Thereafter, as shown in FIG. 2E, the electric torch 60 is used to form a ball 5 2 at the front end of the line 50. Then, as shown in FIG. 2F, the capillary 40 is positioned on the bonding pad 10 of the semiconductor wafer 8 and bonded once. Next, as shown in FIG. 2G, the wire 50 from the bonding pad 10 is wound, and then the wire 50 is located on the upper part of the inclined surface 5 1 c of the upper part of the bump 5 1 a.

313975.ptd 第14頁 564538 五、發明說明(7) 毛細管40之底部42使線50與凸塊51a上部之傾斜面51c接 合’並將線5 0切斷。 第3圖係上述第2 G圖之步驟中線5 0與凸塊5 1 a上部之傾 斜面5 1 c接合時的放大圖。如上所述,將凸塊5丨a上面5 1 c ^傾斜角0作成2。至6 0。,係根據第1導體(接合墊)1 0與 第2導體(配線)2 〇之高度方向的位置關係,而從實驗得知 此範圍為適當者。亦即,將線連接於第1導體丨〇及第2導體 2 〇之間時,在電路基板3 〇上第1導體丨〇的位置低於第2導體 2 0的情形,將傾斜角0作得較小較容易使起自第1導體i 〇 之經過迴繞的線50為第2導體20的面上之凸塊51a的上面所 導引。另一方面,第1導體1 〇的位置高於第2導體2〇的情 形’則相反地將傾斜角Θ作得較大使導引變得容易。 又’上述之線的接合係利用超音波施加裝置者。 其次參照第4圖至第9圖,說明有關本發明凸塊及复形 成方法之實施形態。 … 第4圖係顯示設於由陶瓷基板或印刷電路基板等之基 板,或者引線框架等所構成之電路基板3〇上的第 與第2導體20,及構成接合(bonding)裝置之_部分 管40與通過其貫通孔41内下降且前端形成有球“的線&細 者0 其次,根據第5A圖至第5F圖說明有關本發明 成方法之一實施形態。 & β凸塊的形· 首先’在從毛細管40底部之貫通孔41突出的線 端’藉由省略圖示的電氣氣炬之熱形成球5丨。至0之前 ^糸為~313975.ptd Page 14 564538 V. Description of the invention (7) The bottom 42 of the capillary 40 connects the wire 50 with the inclined surface 51c on the upper portion of the bump 51a and cuts the wire 50. Fig. 3 is an enlarged view when the line 50 and the inclined surface 5 1 c at the upper portion of the bump 5 1 a are joined in the step of the second G diagram. As described above, the inclination angle 0 of the upper surface 5 1 c of the bump 5 a is set to 2. To 6 0. Based on the positional relationship in the height direction of the first conductor (bonding pad) 10 and the second conductor (wiring) 20, it is experimentally known that this range is appropriate. That is, when a line is connected between the first conductor 丨 0 and the second conductor 20, when the position of the first conductor 丨 0 on the circuit substrate 30 is lower than that of the second conductor 20, the inclination angle 0 is set as If it is smaller, it is easier to guide the wound wire 50 from the first conductor i 0 to the upper surface of the bump 51 a on the surface of the second conductor 20. On the other hand, in the case where the position of the first conductor 10 is higher than that of the second conductor 20 ', conversely, the inclination angle Θ is made large to facilitate the guidance. Also, the above-mentioned joining of the wires is performed by using an ultrasonic wave applying device. Next, embodiments of the bump and complex forming method of the present invention will be described with reference to FIGS. 4 to 9. … Figure 4 shows the second and second conductors 20 on a circuit board 30 composed of a ceramic substrate, a printed circuit board, or a lead frame, etc., and a part of a tube forming a bonding device. 40 and the line which descends through its through hole 41 and has a ball formed at the tip 0. Next, an embodiment of the method of the present invention will be described with reference to Figs. 5A to 5F. &Amp; · First, at the end of the wire protruding from the through hole 41 at the bottom of the capillary 40, the ball 5 丨 is formed by the heat of an electric torch (not shown). Before 0, ^ 糸 is ~

564538 五、發明說明(8) 般的製造步驟。 其次,第1步驟係如第5A圖所示,使毛細管40下降至 第2導體2 0上,將形成在線5 0前端的球5 1接合於第2導體2 0 上來形成凸塊5 1 a。 接著,第2步驟係如第5B圖所示,使該毛細管40垂直 上昇。 其次,第3步驟係如第5C圖所示,使該毛細管40朝與 該第1導體1 0所在位置的方向相反的方向橫向移動。 再者,第4步驟係如第5D圖所示,使該毛細管40下降 而使毛細管4 0之底部4 2壓接在於凸塊5 1 a的面上。 接著,第5步驟係如第5E圖所示,使該毛細管40朝該 第1導體10之方向橫向移動。 以毛細管之移動表示上述各個步驟,則如第2 F圖所示 為Ml— MM3— Μ4— M5,並由於經過該等之步驟,能將其 上面5 1 c成為傾斜面的凸塊5 1 a形成於第2導體2 0的面上。 上述各步驟中毛細管4 0之移動距離及移動方向之控 制,係以下述方式進行,亦即使藉由這樣的控制而形成的 凸塊5 1 a如第6圖所示,於連結第1導體1 0及第2導體2 0的垂 直面之剖面圖中,連結凸塊5 1 a上面5 1 c之兩端部P丨、P的 直線相對於第2導體2 0的面之傾斜角0 ,形成為向第1導體 之2°至60°之張角。 又於圖中,符號A表示凸塊5 1 a的基底部之直徑,符號 B表示基底部之厚度,符號C表示凸塊5 1 a之高度。 實際上該尺寸A、B、C,係與線5 0之直徑有關者,線564538 V. Description of the invention (8) General manufacturing steps. Next, in the first step, as shown in FIG. 5A, the capillary 40 is lowered onto the second conductor 20, and the ball 51 formed at the front end of the line 50 is joined to the second conductor 20 to form a bump 5a. Next, in the second step, as shown in Fig. 5B, the capillary 40 is raised vertically. Next, in the third step, as shown in Fig. 5C, the capillary tube 40 is moved laterally in a direction opposite to the direction where the first conductor 10 is located. In the fourth step, as shown in FIG. 5D, the capillary 40 is lowered, and the bottom 4 2 of the capillary 40 is crimped to the surface of the bump 5 1 a. Next, the fifth step is to move the capillary 40 laterally in the direction of the first conductor 10 as shown in FIG. 5E. The above steps are represented by the movement of the capillary tube. As shown in Fig. 2F, M1—MM3—M4—M5 is shown. As a result of these steps, the upper surface 5 1 c can be turned into a bump 5 1 a on the inclined surface. It is formed on the surface of the second conductor 20. In the above steps, the control of the moving distance and direction of the capillary 40 is performed in the following manner. Even if the bump 5 1 a formed by such control is shown in FIG. 6, it is connected to the first conductor 1. 0 and the second conductor 20 in a vertical cross-sectional view, the straight line connecting the two ends P 丨 and P of the upper surface 5 1 c of the bump 5 1 a with respect to the surface of the second conductor 20 at an inclination angle 0 is formed The opening angle is 2 ° to 60 ° toward the first conductor. Also in the figure, the symbol A represents the diameter of the base portion of the bump 5 1 a, the symbol B represents the thickness of the base portion, and the symbol C represents the height of the bump 5 1 a. In fact, the dimensions A, B, and C are related to the diameter of the line 50, the line

313975.ptd 第16頁 564538 五、發明說明(9) 5 0之直徑為7至1 0 0// m時,基底部之直徑A可在2 5至3 0 0// m 之範圍,基底部之厚度B可在4至6 0 // m之範圍,凸塊之高 度C可在1 〇至2 0 0// in之範圍内形成。舉一例則於線直徑 = 3 0 0// m之金線時,形成基底部直徑A = 75// m、基底部厚度 B=1 7// m、凸塊高度060// m之凸塊51a。另一例,線直徑 = 5 0// m之金線時,形成基底部直徑A=190/z m、基底部厚度 B = 3 5/z m、凸塊高度0110// m之凸塊51a。 其次,根據第7A圖至第7H圖說明有關本發明凸塊的形 成方法之其他實施形態。 y 首先’藉由省略圖示的電氣氣炬之熱,在從毛細管4〇 底部之貫通孔4 1突出的線5 0的前端形成球5丨。 ' 其次,第1步驟係如第7 A圖所示,使毛細管4 〇下降至 第2導體2 0上,使形成在線5 0前端的球5 1接合於第2導體上 來形成凸塊5 1 a。 ' 接著,第2步驟係如第7B圖所示使該毛細管4〇垂直上 昇0 官40朝該第1導體10 使該毛細管4 0垂直 , 第3步驟係如第7C圖所示使該毛細 所在位置的方向橫向移動。 接著,第4製程係如第7D圖所示, 上昇。 其次,第5步驟係如第7E圖所示,佶呤车 ^ 、、 ^緣毛細管40朝盘 該第1導體1 〇所在位置的方向的相反方向橫向移 /、 再者,第6步驟係如第7F圖所示,係兮$,動。 毛細管4 〇下降 而使毛細管4 0之底部4 2壓接於凸塊5 1 a的面上。313975.ptd Page 16 564538 V. Description of the invention (9) When the diameter of 50 is 7 to 100 / m, the diameter A of the base can be in the range of 25 to 3 0 0 / m. The thickness B may be in a range of 4 to 6 // // m, and the height C of the bump may be formed in a range of 10 to 2 0 // in. For example, when a gold wire with a wire diameter of 3 0 0 // m is formed, a bump having a base diameter of A = 75 // m, a base thickness of B = 1 7 // m, and a bump height of 060 // m is formed. 51a. In another example, when a gold wire having a wire diameter of 50 // m, a bump 51a having a base diameter A = 190 / z m, a base thickness B = 35 / z m, and a bump height 0110 // m is formed. Next, another embodiment of the method for forming bumps according to the present invention will be described with reference to Figs. 7A to 7H. y First 'A ball 5 丨 is formed at the tip of a line 50 that protrudes from a through hole 41 at the bottom of the capillary tube 40 by the heat of an electric torch (not shown). 'Next, as shown in FIG. 7A, the first step is to lower the capillary 40 to the second conductor 20, and to join the ball 5 1 formed at the front end of the line 50 to the second conductor to form a bump 5 1 a. . 'Next, the second step is to raise the capillary 40 vertically as shown in FIG. 7B. The official 40 is directed toward the first conductor 10 to make the capillary 40 vertical. The third step is to make the capillary as shown in FIG. 7C. The direction of the position moves laterally. Next, the fourth process is ascended as shown in FIG. 7D. Next, the fifth step is shown in FIG. 7E, and the purine car ^, ^ edge capillary 40 is laterally moved in the opposite direction of the direction where the first conductor 10 is located. Furthermore, the sixth step is as As shown in Figure 7F, it is $, move. The capillary 40 is lowered and the bottom 42 of the capillary 40 is crimped to the surface of the bump 5 1 a.

564538 五、發明說明(ίο) 最後,第7步驟係如第7G圖所示,使該毛細管40朝該 第1導體10之方向橫向移動。 以毛細管之移動表示上述各個步驟,就如第7H圖所示 為Μ 1— Μ 2— Μ 3—^ Μ 4— Μ 5— Μ 6— Μ 7,並由於經過該等步驟’ 將其上面5 1 c成為傾斜面的凸塊5 1 a形成於第2導體2 0的面 上。 上述各步驟中毛細管4 0之移動距離及移動方向之控 制,係以下述方式進行,亦即使藉由這樣的控制而形成的 凸塊,如第8A圖、第8B圖所示於連結第1導體1 0及第2導體 2 0的垂直面之剖面圖中,連結凸塊5 1 a上面5 1 c之兩端部 P r P妁直線相對於第2導體2 0的面之傾斜角6»形成為向第 1導體之2°至60°之張角。 於上述之步驟中,使毛細管4 0沿如第7 Η圖之點線移動 時,因積載於凸塊5 1 a上面5 1 c之線5 0的彎曲部5 1 b的量會 改變,故亦能使最終形成的凸塊5 1 a之高度如第8 A圖般地 作高,或如第8 B圖般地使凸塊5 1 a之上部面積寬於基底部 面積。 關於本發明實施形態的凸塊5 1 a,係如第3圖、第6 圖、第8A圖、第8B圖所示乃上面51c形成為平面或凹面, 同時在連結第1導體10及第2導體20的垂直面的剖面圖中, 連結凸塊5 1 a上面5 1 c之兩端部Ρ ρ P钓直線相對於第2導體 2 0的面的傾斜角0 ,形成為向第1導體1 0之2°至6 0°之張 角。 將如上述形狀之凸塊5 1 a,預先形成在第2導體2 0的面564538 5. Description of the invention (ίο) Finally, as shown in FIG. 7G, the seventh step is to move the capillary 40 laterally in the direction of the first conductor 10. The above steps are represented by the movement of the capillary, as shown in Fig. 7H as M 1-M 2-M 3-^ M 4-M 5-M 6-M 7 and as a result of these steps, the above 5 The bump 5 1 a that 1 c becomes an inclined surface is formed on the surface of the second conductor 20. The control of the movement distance and direction of the capillary 40 in each of the above steps is performed in the following manner, and even if a bump is formed by such control, the first conductor is connected as shown in Figs. 8A and 8B. 10 and the cross section of the second conductor 20 in a vertical plane, the connecting blocks 5 1 a and the upper end 5 1 c of the two ends P r P 妁 are formed at an inclination angle 6 »of the straight line with respect to the surface of the second conductor 20 The opening angle is 2 ° to 60 ° toward the first conductor. In the above steps, when the capillary 40 is moved along the dotted line as shown in FIG. 7 (b), the amount of the curved portion 5 1 b stored on the line 5 0 of the bump 5 1 a will change, so The height of the finally formed bump 5 1 a can be made as shown in FIG. 8A, or the area of the upper part of the bump 5 1 a can be made wider than that of the base part as shown in FIG. 8B. Regarding the bump 5 1 a according to the embodiment of the present invention, as shown in FIG. 3, FIG. 6, FIG. 8A, and FIG. 8B, the upper surface 51 c is formed as a flat surface or a concave surface, and the first conductor 10 and the second conductor are connected at the same time. The cross-sectional view of the vertical surface of the conductor 20 is such that the inclination angle 0 of the two ends P ρ P of the connecting bump 5 1 a and the upper surface 5 1 c with respect to the plane of the second conductor 20 is formed toward the first conductor 1. Opening angle from 2 ° to 60 °. The bump 5 1 a having the shape described above is formed in advance on the surface of the second conductor 20.

31?975.ptd 第18頁 56453831? 975.ptd Page 18 564538

五、發明說明(11) 、 上則如第9圖所米,從第1導體1 〇迴繞連接線5 0至第2導體 20時,其傾斜面成為引導面^能使線50之彎曲變少,減少 線彼此間之接觸或由於線之鬆弛而與電路基板面之接觸 等。 [發明之效果] 如上所述,依本發明之絲焊方法’形成於凸塊上部的 傾斜面,在從第1導體迴繞連接線至第2導體時會成為引導 面,而能防止線與半導體晶片、或線與接合墊之接觸。 又,凸塊上面成為傾斜面,故消除了如先前的於接合線與 線時發生的線彎曲,結果使絲焊後之相鄰線間不會接觸。 再者,凸塊上部之楔形接合係形成為傾斜面,在楔形接合 後無剩餘線,能作成薄的半導體封裝件。又,使傾斜面成 為平面或凹面時,可擴大接合面積’亦能夠提高接合強 又 成复 依本發明凸塊的形成方法,1於弟Z等體面上形 λΪ有在連結第1導體及第2導體的垂直面的剖面圖中連妙 第1導的兩端部的直線相對於第2導體面的傾斜角為向 線至第12°至60°張角之凸塊,故從第1導體迴繞連接 少,減5、導體時’傾斜面會成為引導面而可使線之彎曲 之接觸S線彼此間之接觸或由於線的鬆他而與電路基板面 生。 、’同時亦能防止凸塊與線接合時之線彎曲的發 又 凸塊上 斜角,故使傾斜角小時就能減少 作成薄的封裝件。又,第1導體 ,能自由地形成傾 之剩餘的線,而可V. Description of the invention (11) As shown in Figure 9, when the connecting wire 50 is wound from the first conductor 10 to the second conductor 20, the inclined surface becomes the guide surface ^, which can reduce the bending of the wire 50. , To reduce the contact between the wires or contact with the circuit board surface due to the looseness of the wires. [Effects of the Invention] As described above, according to the wire bonding method of the present invention, the inclined surface formed on the upper portion of the bump becomes a guide surface when the connection wire is wound from the first conductor to the second conductor, and the wire and the semiconductor can be prevented. The contact of the wafer or wire with the bonding pad. In addition, the upper surface of the bump is an inclined surface, so that the wire bending which occurs when the wire and the wire are bonded as previously is eliminated, and as a result, the adjacent wires after the wire bonding are not brought into contact. Furthermore, the wedge-shaped bonding system at the upper portion of the bump is formed as an inclined surface, and there is no remaining wire after the wedge-shaped bonding, and a thin semiconductor package can be made. In addition, when the inclined surface is made flat or concave, the joint area can be enlarged, and the joint strength can be increased, and the bump forming method according to the present invention can be increased. The cross section of the vertical plane of the 2 conductor is a bump with a straight line connecting the two ends of the first guide with respect to the second conductor plane. The inclination of the straight line to the 12 ° to 60 ° opening angle is a loop. There is less connection, minus 5. When the conductor, the 'inclined surface will become the guide surface and can make the curved contact of the wires S contact between the wires or the circuit board surface due to the looseness of the wires. At the same time, it can also prevent the wires from bending when the bumps are joined to the wires, and the bevels on the bumps can be reduced, so that when the inclination angle is small, a thin package can be reduced. In addition, the first conductor can freely form an inclined remaining line, and can

第19頁Page 19

564538 五、發明說明(12) 在較高的位置時,藉由使傾斜角變大即可使線的連接容易 且完全地進行。 又,可以使凸塊上面之面積變大,故能擴大與線之接 合面積,提高接合強度。564538 V. Description of the invention (12) At a high position, the connection of the wires can be easily and completely performed by making the tilt angle larger. In addition, since the area on the upper surface of the bump can be increased, the area to be joined with the wire can be enlarged, and the joint strength can be improved.

313975.pid 第20頁 564538 圖式簡單說明 [圖式簡單說明] 第1圖係顯示使用有關本發明一實施形態的絲焊方法 將線連接於半導體晶片與配線之間的狀態之剖面圖。 第2A圖至第2G圖係用以說明本發明之絲焊方法之一實 施形態的接合步驟之圖。 第3圖係進行2次接合而將線連接於凸塊上部之傾斜面 上時的放大剖面圖。 第4圖係顯示實施有關本發明凸塊的形成方法前之狀 態,顯示電路基板上之第1導體與第2導體及毛細管的位置 關係之圖。 第5 A圖至第5 E圖係顯示有關本發明凸塊的形成方法之 一實施形態的形成步驟圖,第5 F圖係顯示毛細管的移動路 徑之圖。 第6圖係依第5A圖至第5F圖所示的實施形態而形成的 凸塊之剖面圖。 第7A圖至第7G圖係顯示有關本發明凸塊的形成方法之 其他實施形態的形成步驟圖,第7H圖係顯示毛細管的移動 ‘ 路徑之圖。 第8A圖及第8B圖係依第7A圖至第7H圖所示的實施形態 而分別形成的凸塊之剖面圖。 第9圖係顯示使用依有關本發明凸塊的形成方法之實 施形態而形成的凸塊進行絲焊的例子之剖面圖。 第1 0圖係使用以先前之凸塊的形成方法所形成的凸塊 進行絲焊時的圖。313975.pid Page 20 564538 Brief description of drawings [Simplified description of drawings] Fig. 1 is a cross-sectional view showing a state where a wire is connected between a semiconductor wafer and a wiring using a wire bonding method according to an embodiment of the present invention. Figures 2A to 2G are diagrams for explaining the bonding steps of an embodiment of the wire bonding method of the present invention. Fig. 3 is an enlarged cross-sectional view when the wire is connected to the inclined surface at the upper portion of the bump by performing two bondings. Fig. 4 is a diagram showing a state before the method for forming a bump according to the present invention, and showing a positional relationship between a first conductor, a second conductor, and a capillary on a circuit board. Figs. 5A to 5E are diagrams showing the formation steps of one embodiment of the bump forming method of the present invention, and Fig. 5F is a diagram showing the movement path of the capillary. Fig. 6 is a sectional view of a bump formed according to the embodiment shown in Figs. 5A to 5F. 7A to 7G are diagrams showing formation steps of other embodiments of the method for forming bumps according to the present invention, and FIG. 7H is a diagram showing the path of the movement of the capillary. 8A and 8B are cross-sectional views of bumps formed according to the embodiments shown in FIGS. 7A to 7H. Fig. 9 is a cross-sectional view showing an example of wire bonding using bumps formed according to an embodiment of the method for forming bumps according to the present invention. FIG. 10 is a diagram when wire bonding is performed using bumps formed by the previous bump formation method.

313975.ptd 第2]頁 564538 第1 1圖係用以說明使用以先前之凸塊的形成方法所形 圖式簡單說明 成的 凸塊進行絲焊時的問 題點之 圖 ο 6 晶片安裝貧 8 半導體晶片 10 第1導體(接合墊) 20 第2導體(配線) 30 電路基板 40 毛細管 41 貫通孔 42 底部 50 線 5卜 52 球 51a 凸塊 51b 彎曲部 51c 傾斜面(上面) 60 電氣氣炬 A 凸塊基底之直徑 B 凸塊基底部之厚度 C 凸塊之高度 Pr P2 端部 θ 傾斜角313975.ptd page 2] page 564538 page 1 1 is a diagram for explaining the problem of wire bonding using the bumps simply described by the previous bump formation method. 6 Wafer mounting 8 Semiconductor wafer 10 First conductor (bonding pad) 20 Second conductor (wiring) 30 Circuit board 40 Capillary tube 41 Through-hole 42 Bottom 50 Line 5 52 Ball 51a Bump 51b Bend 51c Inclined surface (upper surface) 60 Electric torch A The diameter of the bump base B The thickness of the base of the bump C The height of the bump Pr P2 End θ tilt angle

313975.ptd 第22頁313975.ptd Page 22

Claims (1)

564538 六、申請專利範圍 1. 一種絲焊方法,係將線連接於第1導體及第2導體之間 的方法,包括: 在該第2導體上以球焊方式形成凸塊之步驟; 在該凸塊之上部形成傾斜面之步驟; 進行1次接合以將線之一端連接於該第1導體之步 驟;以及 將線從該第1導體向該第2導體上的凸塊迴繞而後 進行2次接合以將線之另一端連接於該凸塊上部之傾斜 面上之步驟。 2 ·如申請專利範圍第1項之絲焊方法,其中該凸塊上部之 傾斜面,係以連結該傾斜面之兩端部的直線相對於該 第2導體面所成的傾斜角成為向該第1導體之2°至60° 之張角的方式形成。 3. —種絲焊方法,係使用貫通孔插穿有線之毛細管,將 線連接於第1導體及第2導體之間的方法,包括: 使毛細管位於該第2導體上並進行球焊,藉以在該 第2導體上形成凸塊之步驟; 使該毛細管向上方移動後,使該毛細管朝與該第1 導體相反側之位置橫向移動,再使該毛細管下降來切 斷該線並在該凸塊之上部形成傾斜面之步驟; 進行1次接合以將該線之一端連接於該第1導體之 步驟;以及 進行2次接合,使該毛細管位於該凸塊上部之傾斜 面,再用該毛細管之底部將從該毛細管内延伸出的線564538 6. Scope of patent application 1. A wire bonding method, which is a method of connecting a wire between a first conductor and a second conductor, including: a step of forming a bump on the second conductor by ball bonding; A step of forming an inclined surface on the upper portion of the bump; a step of bonding once to connect one end of the wire to the first conductor; and a step of winding the wire from the first conductor to the bump on the second conductor and then performing twice The step of joining to connect the other end of the wire to the inclined surface on the upper part of the bump. 2. The wire bonding method according to item 1 of the scope of the patent application, wherein the inclined surface of the upper portion of the bump is an inclined angle formed by a straight line connecting both ends of the inclined surface with respect to the second conductor surface toward the second conductor surface. The first conductor is formed with an opening angle of 2 ° to 60 °. 3. —A wire bonding method is a method of using a through-hole to penetrate a wired capillary tube and connecting a wire between a first conductor and a second conductor, including: positioning the capillary tube on the second conductor and performing ball welding, thereby A step of forming a bump on the second conductor; after moving the capillary upward, the capillary is moved laterally to a position opposite to the first conductor, and then the capillary is lowered to cut the line and cut the line A step of forming an inclined surface on the upper part of the block; a step of performing a bonding to connect one end of the wire to the first conductor; and a second bonding so that the capillary is positioned on the inclined surface of the upper portion of the bump, and then using the capillary The line that will extend from inside the capillary 313975.ptd 第23頁 564538 六、申請專利範圍 連接於該凸塊上部之傾斜面,並在該接合部近旁將該 線切斷之步驟。 4. 如申請專利範圍第3項之絲焊方法,其中該凸塊上部之 傾斜面係形成平面或凹面, 該2次接合步驟,係包含使該毛細管位於該凸塊上 部之傾斜面,再用該毛細管之底部將線壓接於該凸塊 上部之傾斜面上。 5. 如申請專利範圍第3或4項之絲焊方法,其中該凸塊上 部之傾斜面,係以連結該傾斜面之兩端部的直線相對 於該第2導體面所成的傾斜角成為向該第1導體之2°至 6 0°之張角的方式形成。 6. —種凸塊的形成方法,係在第1導體上進行1次接合, 並在第2導體上進行2次接合,以將線連接於第1導體及 第2導體之間時,預先在第2導體上以球焊方式形成凸 塊的方法,包括: 使毛細管下降至該第2導體上,將形成在線前端的 球連接於該第2導體上來形成凸塊之步驟; 其後,使該毛細管垂直上昇之步驟; 其後,使該毛細管朝與該第1導體所在位置的方向 相反的方向橫向移動之步驟; 其後,使該毛細管下降而使該毛細管之底部壓接 於該凸塊之步驟;以及 其後,使該毛細管朝該第1導體之方向橫向移動之 步驟,而在該凸塊之上部設置傾斜面者。313975.ptd Page 23 564538 6. Scope of patent application The step of connecting to the inclined surface of the upper part of the bump and cutting the line near the joint. 4. For the wire bonding method of the third item of the patent application, wherein the inclined surface of the upper portion of the bump is formed as a flat surface or a concave surface, and the two joining steps include placing the capillary on the inclined surface of the upper portion of the bump, and then use The bottom of the capillary presses the wire on the inclined surface of the upper part of the bump. 5. For the wire bonding method according to item 3 or 4 of the scope of the patent application, wherein the inclined surface of the upper portion of the bump is an inclined angle formed by a straight line connecting both ends of the inclined surface with respect to the second conductor surface. The first conductor is formed to have an opening angle of 2 ° to 60 °. 6. —A method of forming a bump is to perform a single bonding on the first conductor and a second bonding on the second conductor to connect the wire between the first conductor and the second conductor in advance. A method of forming a bump on the second conductor by ball bonding includes: a step of lowering a capillary tube onto the second conductor, and connecting a ball formed at the front end of the wire to the second conductor to form a bump; and thereafter, forming the bump A step for the capillary to rise vertically; thereafter, a step for laterally moving the capillary in a direction opposite to the direction where the first conductor is located; and thereafter, lowering the capillary to crimp the bottom of the capillary to the bump Step; and thereafter, a step of laterally moving the capillary in the direction of the first conductor, and an inclined surface is provided on an upper portion of the bump. 313975.ptd 第24頁 564538 六、申請專利範圍 7. 如申請專利範圍第6項之凸塊的形成方法,其中該凸塊 上部之傾斜面,係以連結該傾斜面之兩端部的直線相 對於該第2導體面所成的傾斜角成為向該第1導體之2° 至6 0°之張角的方式形成。 8. —種凸塊的形成方法,係在第1導體上進行1次接合, 並在第2導體上進行2次接合,以將線連接於第1導體及 第2導體之間時,預先在第2導體上以球焊方式形成凸 塊的方法,包括: 使毛細管下降至該第2導體上,將形成在線前端的 球連接於該第2導體上來形成凸塊之步驟; 其後,使該毛細管垂直上昇之步驟; 其後,使該毛細管朝該第1導體所在位置的方向橫 向移動之步驟; 其後,使該毛細管垂直上昇之步驟; 其後,使該毛細管朝與該第1導體所在位置的方向 相反的方向橫向移動之步驟; 其後,使該毛細管下降而使該毛細管之底部壓接 於該凸塊之步驟;以及 其後,使該毛細管朝該第1導體所在位置的方向橫 向移動之步驟,而在該凸塊之上部設置傾斜面。 9. 如申請專利範圍第8項之凸塊的形成方法,其中該凸塊 上部之傾斜面,係以連結該傾斜面之兩端部的直線相 對於該第2導體面所成的傾斜角成為向該第1導體之2° 至6 0°之張角的方式形成。313975.ptd Page 24 564538 6. Application for patent scope 7. For the method of forming a bump in item 6 of the scope of patent application, wherein the inclined surface on the upper part of the bump is opposite to the straight line connecting the two ends of the inclined surface. The inclination angle formed on the second conductor surface is formed so as to extend to an opening angle of 2 ° to 60 ° of the first conductor. 8. —A method of forming a bump is to perform a single bond on the first conductor and a second bond on the second conductor to connect the wire between the first conductor and the second conductor in advance. A method of forming a bump on the second conductor by ball bonding includes: a step of lowering a capillary tube onto the second conductor, and connecting a ball formed at the front end of the wire to the second conductor to form a bump; and thereafter, forming the bump A step of vertically raising the capillary; a step of laterally moving the capillary toward the position of the first conductor; a step of vertically raising the capillary; and a step of moving the capillary toward the first conductor A step of laterally moving the opposite direction of the position; thereafter, a step of lowering the capillary and crimping the bottom of the capillary to the bump; and thereafter, laterally moving the capillary toward the position of the first conductor In the moving step, an inclined surface is provided on the upper portion of the bump. 9. For the method for forming a bump in item 8 of the scope of patent application, wherein the inclined surface of the upper portion of the bump is an inclination angle formed by a straight line connecting both ends of the inclined surface with respect to the second conductor surface as The first conductor is formed to have an opening angle of 2 ° to 60 °. 313975.ptd 第25頁 564538 六、申請專利範圍 1 0 . —種凸塊,係在第1導體上進行1次接合,並在第2導體 上進行2次接合,以將線連接於第1導體及第2導體之間 時,預先在第2導體上以球焊方式形成的凸塊,其特徵 為, 具備有形成為平面或凹面之上面,該上面係以連 結其兩端部的直線相對於該第2導體面所成的傾斜角成 為向該第1導體之2°至60°之張角的方式形成。313975.ptd Page 25 564538 VI. Patent application scope 1 0 — A kind of bump, which is bonded once on the first conductor and twice on the second conductor to connect the wire to the first conductor Between the second conductor and the second conductor, a bump formed in advance on the second conductor by ball welding is characterized in that it has an upper surface formed as a flat surface or a concave surface. The inclination angle formed by the second conductor surface is formed so as to extend toward the first conductor at an angle of 2 ° to 60 °. 第26頁 313975.ptdPage 26 313975.ptd
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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI550740B (en) * 2011-05-13 2016-09-21 瑞薩電子股份有限公司 A semiconductor device and a manufacturing method thereof

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI550740B (en) * 2011-05-13 2016-09-21 瑞薩電子股份有限公司 A semiconductor device and a manufacturing method thereof

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