JPH02237119A - Formation of bump electrode - Google Patents
Formation of bump electrodeInfo
- Publication number
- JPH02237119A JPH02237119A JP5847589A JP5847589A JPH02237119A JP H02237119 A JPH02237119 A JP H02237119A JP 5847589 A JP5847589 A JP 5847589A JP 5847589 A JP5847589 A JP 5847589A JP H02237119 A JPH02237119 A JP H02237119A
- Authority
- JP
- Japan
- Prior art keywords
- electrode
- bump
- wire
- wedge
- shaped tool
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000015572 biosynthetic process Effects 0.000 title description 7
- 238000000034 method Methods 0.000 claims abstract description 37
- 239000002184 metal Substances 0.000 claims abstract description 31
- 229910052751 metal Inorganic materials 0.000 claims abstract description 31
- 238000010438 heat treatment Methods 0.000 claims description 2
- 238000002844 melting Methods 0.000 claims 1
- 230000008018 melting Effects 0.000 claims 1
- 239000004065 semiconductor Substances 0.000 abstract description 31
- 229910000679 solder Inorganic materials 0.000 description 15
- 239000000758 substrate Substances 0.000 description 8
- 230000004888 barrier function Effects 0.000 description 5
- 230000001681 protective effect Effects 0.000 description 5
- 229910052581 Si3N4 Inorganic materials 0.000 description 4
- 229910052802 copper Inorganic materials 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 4
- 229910052737 gold Inorganic materials 0.000 description 3
- 238000003825 pressing Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 2
- 230000005496 eutectics Effects 0.000 description 2
- 108010074864 Factor XI Proteins 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 229910020816 Sn Pb Inorganic materials 0.000 description 1
- 229910020922 Sn-Pb Inorganic materials 0.000 description 1
- 229910008783 Sn—Pb Inorganic materials 0.000 description 1
- 210000000988 bone and bone Anatomy 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/0401—Bonding areas specifically adapted for bump connectors, e.g. under bump metallisation [UBM]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
- H01L2224/0554—External layer
- H01L2224/05599—Material
- H01L2224/056—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/05617—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
- H01L2224/05624—Aluminium [Al] as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/11—Manufacturing methods
- H01L2224/113—Manufacturing methods by local deposition of the material of the bump connector
- H01L2224/1133—Manufacturing methods by local deposition of the material of the bump connector in solid form
- H01L2224/1134—Stud bumping, i.e. using a wire-bonding apparatus
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
- H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
- H01L2224/13001—Core members of the bump connector
- H01L2224/13099—Material
- H01L2224/131—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/13117—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
- H01L2224/13124—Aluminium [Al] as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
- H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
- H01L2224/13001—Core members of the bump connector
- H01L2224/13099—Material
- H01L2224/131—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/13138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/13144—Gold [Au] as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
- H01L2224/78—Apparatus for connecting with wire connectors
- H01L2224/7825—Means for applying energy, e.g. heating means
- H01L2224/783—Means for applying energy, e.g. heating means by means of pressure
- H01L2224/78313—Wedge
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
- H01L2224/78—Apparatus for connecting with wire connectors
- H01L2224/7825—Means for applying energy, e.g. heating means
- H01L2224/783—Means for applying energy, e.g. heating means by means of pressure
- H01L2224/78313—Wedge
- H01L2224/78314—Shape
- H01L2224/78317—Shape of other portions
- H01L2224/78318—Shape of other portions inside the capillary
Landscapes
- Wire Bonding (AREA)
Abstract
Description
【発明の詳細な説明】
（産業上の利用分野）
本発明は半導体素子等の電子部品のバンプ電極形成方法
に関するものである。DETAILED DESCRIPTION OF THE INVENTION (Field of Industrial Application) The present invention relates to a method for forming bump electrodes for electronic components such as semiconductor devices.
（従来の技術）
半導体素子等の電子部品の接続方法にはワイヤ接続方法
、ＴＡＢ （ Ｔａｐｅ Ａｕｔｏｍａｔｅｄ Ｂｏｎ
ｄｉｎｇ ）接続方法、フリップチップ接続方法等が用
いられている。ＴＡＢ接続方法、フリップチップ接続方
法は半導体素子の総ての電極を一括で接続できるので、
ワイヤ接続方法に比べて接続工数の低減が図れるという
特徴がある。しかし、これらの接続方法では半導体素子
の電極に突起状のバンプ電極を形成する必要がある。(Prior art) Wire connection methods and TAB (Tape Automated Bones) are methods for connecting electronic components such as semiconductor devices.
ding) connection method, flip-chip connection method, etc. are used. The TAB connection method and flip-chip connection method can connect all the electrodes of a semiconductor element at once, so
This method has the advantage of reducing the number of connection steps compared to the wire connection method. However, these connection methods require the formation of protruding bump electrodes on the electrodes of the semiconductor element.
従来のバンプ電極形成方法は「最新 サーフェス・マウ
ント・テクノロジーＪ （１９８６年５月２５日）株
式会社工業調査会発行ｐ．１７５〜１７６に記載される
ように半導体素子のウェーハ状態で形成される。その工
程断面図を第８図に示す。第８図において、（ａ）１の
シリコンウェーハ上には２のＭ電極及び３の窒化シリコ
ン等の保護膜が形成されている。Φ）その上に４のＴｉ
／Ｐｄ等のバリャメタルをウェーハ全面に蒸着法で形成
し、（Ｃ）Ｍ電極２の上部が開口するように５のレジス
ト形成する。（ｄ）次にバリャメタル４に通電してＡｕ
めっきを行い、６のＡｕバンプ電極を形成する。（ｅ）
更にレジスト５を除去及び不要部分のバリャメタル４を
エッチングしてＡｕバンプ電極６を完成する。又、バリ
ャメタル、バンプ材料を変えることにより種々のバンプ
電極を前述と同様の工程で形成することが出来る。The conventional bump electrode formation method is as described in "Latest Surface Mount Technology J (May 25, 1986), published by Kogyo Chosenkai Co., Ltd., pp. 175-176," in which bump electrodes are formed on a wafer of a semiconductor element. A cross-sectional view of the process is shown in Fig. 8. In Fig. 8, (a) an M electrode 2 and a protective film such as silicon nitride are formed on the silicon wafer 1. Φ) 4 Ti
A barrier metal such as /Pd is formed on the entire surface of the wafer by vapor deposition, and a resist 5 is formed so that the upper part of the (C)M electrode 2 is open. (d) Next, the barrier metal 4 is energized and the Au
Plating is performed to form 6 Au bump electrodes. (e)
Further, the resist 5 is removed and unnecessary portions of the barrier metal 4 are etched to complete the Au bump electrodes 6. Furthermore, by changing the barrier metal and bump material, various bump electrodes can be formed in the same process as described above.
しかし以上に述べた方法ではウェーハ状態でバンプ電極
を形成するので、多大のバンプ製造設備が必要で製造工
程が複雑であり、又、チップ状態で入手した半導体素子
にはバンプ形成が出来ないという問題があり、出来るだ
け箇便な方法でバンプが形成出来ることが望まれていた
。又、特開昭６２−２１１９３７号公報に記載されてい
るように、キャピラリーを使用してポールポンディング
によりバンプ電極を形成する方法が知られている。However, in the method described above, bump electrodes are formed in the wafer state, which requires a large amount of bump manufacturing equipment and the manufacturing process is complicated, and there is also the problem that bumps cannot be formed on semiconductor elements obtained in chip form. Therefore, it has been desired to be able to form bumps in the most convenient way possible. Furthermore, as described in Japanese Patent Application Laid-Open No. 62-211937, a method is known in which a bump electrode is formed by pole bonding using a capillary.
しかし、この方法では第９図の断面構造に示すように、
１１０半導体素子上の電極１２に形成したバンプ電極１
６の表面の形状が平坦にならず、ワイヤの切断部がバン
プの中心にあるため中心に突起のある形状となりバンプ
の高さが不揃いとなる。このような形状では、基板上に
フリップチップ接続を行った場合、第１０図の接続断面
図に示すように半導体素子１１のバンプ電極１６の高さ
が不揃いなので基仮１７の電極１８との接合部で均一な
接合状態とならず、十分な接合強度が得られないという
問題がある。又、前記バンプ電極を形成した半導体素子
にＴＡＢ接続用のフィンガーリードを接続する場合、第
１１図の接続断面図に示すようにバンプ電極１６の表面
中央部に突起部があるため、フィンガーリード１９は、
ずれて接続されてしまい、接続の信転性が低下するとい
う問題がある。However, with this method, as shown in the cross-sectional structure of Figure 9,
110 Bump electrode 1 formed on electrode 12 on semiconductor element
The shape of the surface of the bump 6 is not flat, and the cut portion of the wire is located at the center of the bump, resulting in a shape with a protrusion at the center, making the height of the bump uneven. In such a shape, when flip-chip bonding is performed on the substrate, the heights of the bump electrodes 16 of the semiconductor element 11 are uneven, as shown in the cross-sectional view of the connection in FIG. There is a problem in that the bonded state is not uniform in some parts, and sufficient bonding strength cannot be obtained. Furthermore, when connecting finger leads for TAB connection to the semiconductor element on which the bump electrodes are formed, since there is a protrusion at the center of the surface of the bump electrode 16 as shown in the connection cross-sectional view of FIG. teeth,
There is a problem in that the connection is misaligned and the reliability of the connection is reduced.
（発明が解決しようとする課題）
本発明は、上述した従来から用いられているはんだ＋
Ｎ＋ Ｃｕ， Ａｕ等の金属のバンプ電極形成方法の種
々の問題点を解決し、簡便な方法でチップ状態の半導体
素子上にも形状の優れたバンプ電極を形成出来る方法を
提供するものである。(Problems to be Solved by the Invention) The present invention solves the problem of the above-mentioned conventional solder +
The present invention solves various problems in the method of forming bump electrodes of metals such as N+ Cu, Au, etc., and provides a method that can easily form bump electrodes with excellent shapes even on semiconductor elements in the form of chips.
（課題を解決するための手段、作用）
上記目的を達成するため、本発明に係わるバンプ形成方
法は、はんだ， Ａｊ２． Ｃｕ， Ａｕ等の金属ワ
イヤをウェッジ形のツールで電子部品の電極上に押圧接
合後、押圧接合した金属ワイヤの接合端部からワイヤを
切断してバンプ電極を形成するようにしたものである。(Means and effects for solving the problem) In order to achieve the above object, a bump forming method according to the present invention uses solder, Aj2. A metal wire such as Cu or Au is press-bonded onto an electrode of an electronic component using a wedge-shaped tool, and then the wire is cut from the bonded end of the press-bonded metal wire to form a bump electrode.
この方法により、チップ状態の半導体素子にも簡便に、
バンプ電極表面の平坦なバンプ電極を形成することが出
来る。This method allows easy processing of semiconductor devices in chip form.
A bump electrode with a flat bump electrode surface can be formed.
又、ウェッジ形のツールのバックラジアス部にはんだ，
／Ｖ， Ｃｕ． Ａｕ等の金属ワイヤを押圧する突起
を設けることにより、前記金属ワイヤの接合端部でのワ
イヤ切断が容易となり、切断形状が整えられパリ等の発
生が殆どなくなる。前記バックラジアス部の突起の高さ
は金属材料、ワイヤ径、ボンディング条件等によるがせ
いぜい１０一もあれば十分である。Also, solder the back radius of the wedge-shaped tool.
/V, Cu. By providing a protrusion that presses a metal wire such as Au, the wire can be easily cut at the joint end of the metal wire, the cut shape is arranged, and the occurrence of burrs and the like is almost eliminated. The height of the protrusion of the back radius portion depends on the metal material, wire diameter, bonding conditions, etc., but it is sufficient if it is at most 10 mm.
特にＴＡＢ接続用のバンプ電極形成方法において、バン
プ電極表面に凹部形成するようにウェッジ形のツールの
金属ワイヤを押圧するボンディング面の一部に凸部を設
けることにより、インナーリード接合時にフィンガーリ
ードの安定化を図ることが出来、接続の信頼性を更に向
上させることが出来る。前記凸部形状の高さは１〜１０
μｍ、幅はリード幅及びリードのアライメント精度等に
より決定される。又、凸部の方向は、バンプ電極形成後
の凹部がリードの方向と一致すれば良く、ウェッジ形の
ツールのボンディング表面では金属ワイヤと同一方向で
も直交方向でも良く、更には両方向に設けても良い。In particular, in the method of forming bump electrodes for TAB connection, by providing a convex part on a part of the bonding surface of a wedge-shaped tool that presses the metal wire so as to form a concave part on the surface of the bump electrode, it is possible to form a concave part on the surface of the bump electrode. Stability can be achieved, and the reliability of the connection can be further improved. The height of the convex shape is 1 to 10
The width is determined by the lead width, lead alignment accuracy, etc. In addition, the direction of the convex part may be the same as the direction of the lead after the formation of the bump electrode, and the direction of the convex part may be the same as or perpendicular to the metal wire on the bonding surface of the wedge-shaped tool, or it may be provided in both directions. good.
又、フリップチップ接続用のバンプ電極形成方法におい
て、はんだバンプ接続のように特にバンプ電極形状を球
状にする場合には、前記のウェッジ形のツールによるバ
ンプ電極形成後にバンプ金属を加熱溶融して整形し、良
好な球状の形状をしたバンプ電極を形成することが出来
る。In addition, in the method of forming bump electrodes for flip-chip connections, when the shape of the bump electrodes is particularly spherical as in solder bump connections, the bump metal is heated and melted and shaped after the bump electrodes are formed using the wedge-shaped tool. However, a bump electrode having a good spherical shape can be formed.
上記方法は必ずしも半導体素子のバンプ電極だけではな
く、基板やチップ部品等の電子部品のバンプ電極形成に
も適用出来る。The above method can be applied not only to the formation of bump electrodes of semiconductor devices, but also to the formation of bump electrodes of electronic components such as substrates and chip components.
以下、本発明の実施例について、図面を用いて具体的に
説明する。Embodiments of the present invention will be specifically described below with reference to the drawings.
（実施例）
実施例１
第１図は本発明の第一の実施例を説明するためのバンプ
電極形成の工程断面図である。第１図において、２１は
半導体素子、２２はＮ電極、２３は窒化シリコンによる
保護膜、２４はφ３０即Ａｊワイヤ、２６はＭバンプ電
極、２７はウェッジ形のツールである。(Example) Example 1 FIG. 1 is a cross-sectional view of the process of forming bump electrodes for explaining a first example of the present invention. In FIG. 1, 21 is a semiconductor element, 22 is an N electrode, 23 is a protective film made of silicon nitride, 24 is a φ30 AJ wire, 26 is an M bump electrode, and 27 is a wedge-shaped tool.
第１図（ａ）に示すようにウェッジ形のツール２７にセ
ットされたφ３０ｒｒｍＡ１ワイヤ２４を半導体素−ｊ
二’２１（７）Ａｌ電極２２上に降下させ、Ｍワイヤ２
４の先端がウェッジ形のツール２７よりとび出さないよ
うにして、超音波及び２５ｇの加圧力をかけてＭワイヤ
２４を電極２２に接合した。As shown in FIG. 1(a), the φ30rrmA1 wire 24 set in the wedge-shaped tool 27 is connected to the semiconductor element-j.
2'21 (7) Lowered onto the Al electrode 22, M wire 2
The M wire 24 was joined to the electrode 22 by applying ultrasonic waves and a pressing force of 25 g so that the tip of the M wire 24 did not protrude from the wedge-shaped tool 27.
この後第１図（ロ）に示すように、ウェッジ形のツール
２７を上昇してＮワイヤ２４を切断してＭバンプ電極２
６を半導体素子２１上のＡｔ１ｔ極２２上に形成した。After that, as shown in FIG. 1(B), the wedge-shaped tool 27 is raised to cut the N wire 24 and the M bump electrode 2 is cut.
6 was formed on the At1t pole 22 on the semiconductor element 21.
この結果高さ１２μｍのＮバンプ電掻を形成することが
出来た。As a result, it was possible to form N-bump electric scratches with a height of 12 μm.
以上の工程を繰り返して半導体素子２１の所定のＭ電極
２２上にＭバンプ電極２６を形成した。The above steps were repeated to form M bump electrodes 26 on predetermined M electrodes 22 of the semiconductor element 21.
実施例２
第２図，第３図は本発明の第二の実施例を説明するため
のウェッジ形のツールとバンプ電極形成工程の断面図で
ある。第２図及び第３図において、３７はウェッジ形の
ツール、３８はウェッジ形のツール３７のバックラジア
ス部の突起、３１は基板、３２はＣｕ導体にＡｕめっき
した電極、３４はφ５０）ｔｍ Ａ ｕワイヤ、３６は
Ａｕバンプ電極である。Embodiment 2 FIGS. 2 and 3 are cross-sectional views of a wedge-shaped tool and a bump electrode forming process for explaining a second embodiment of the present invention. In FIGS. 2 and 3, 37 is a wedge-shaped tool, 38 is a protrusion on the back radius part of the wedge-shaped tool 37, 31 is a substrate, 32 is an electrode made of a Cu conductor plated with Au, and 34 is φ50)tm A The u wire and 36 are Au bump electrodes.
第２図のウェッジ形のツール３７のバックラジアス部に
は５μｍの高さの突起３８が形成されている。このウェ
ッジ形のツール３７を用いてバンプ電極を形成するには
、第３図（ａ）に示すようにウェッジ形のツール３７に
セントされたφ５０μｍＡｕワイヤ３４を基ｖｉ．３１
の電極３２上に降下させ、Ａｕワイヤ３４の先端がウェ
ッジ形のツール３７よりとび出さないようにして、超音
波及び４０ｇの加圧力をかけてＡｕワイヤ３４を電極３
２に接合する。A protrusion 38 with a height of 5 μm is formed on the back radius portion of the wedge-shaped tool 37 shown in FIG. To form a bump electrode using this wedge-shaped tool 37, as shown in FIG. 31
The Au wire 34 is lowered onto the electrode 32 using ultrasonic waves and a pressing force of 40 g, making sure that the tip of the Au wire 34 does not protrude from the wedge-shaped tool 37.
Join to 2.
このときバックラジアス部の突起３ＢはＡｕワイヤ３４
の接合端部でＡｕワイヤ３４を押圧している。At this time, the protrusion 3B of the back radius part is connected to the Au wire 34.
The Au wire 34 is pressed at the joint end.
この後第３図（ｂ）に示すように、ウェッジ形のツール
３７を上昇してＡｕワイヤ３４を切断してＡｕバンプ電
極３６を基板３ｌ上の電極３２上に形成した。このとき
Ａｕワイヤ３４の切断は前記第３図（ａ）に記載したよ
うに、Ａｕワイヤ３４の接合端部が押圧され、くびれで
いるため容易に切断することが出来、切断形状も殆どパ
リが見られず良好なバンプ電極形状を示した。この結果
高さ１５μｍのＡｕバンプ電極を形成することが出来た
。Thereafter, as shown in FIG. 3(b), the wedge-shaped tool 37 was raised to cut the Au wire 34 and form an Au bump electrode 36 on the electrode 32 on the substrate 3l. At this time, the Au wire 34 can be easily cut as the joint end of the Au wire 34 is pressed and constricted as shown in FIG. 3(a), and the cut shape is almost flat. No bumps were observed, indicating a good bump electrode shape. As a result, it was possible to form an Au bump electrode with a height of 15 μm.
以上の工程を繰り返して基板３１の所定の電極３２上に
Ａｕバンプ電極３６を形成した。The above steps were repeated to form Au bump electrodes 36 on predetermined electrodes 32 of the substrate 31.
実施例３
第４図〜第６図は本発明の第三の実施例を説明するため
のウェッジ形のツールとバンプ電極形成工程及びインナ
ーリード接合状態を示す断面図である。第４図、第５図
及び第６図において、４７はウェッジ形のツール、４日
はウェッジ形のツール４７の金属ワイヤを押圧するボン
ディング面の凸部、２ｌは半導体素子、２２はＭ電極、
２３は窒化シリコンによる保護膜、３４はφ５０ａｓＡ
ｕワイヤ、４６はＡｕバンプ電極、４９はフィンガーリ
ードである。Embodiment 3 FIGS. 4 to 6 are cross-sectional views showing a wedge-shaped tool, a bump electrode forming process, and an inner lead bonding state for explaining a third embodiment of the present invention. 4, 5, and 6, 47 is a wedge-shaped tool, 4th is a protrusion on the bonding surface of the wedge-shaped tool 47 that presses the metal wire, 2l is a semiconductor element, 22 is an M electrode,
23 is a protective film made of silicon nitride, 34 is φ50asA
46 is an Au bump electrode, and 49 is a finger lead.
第４図のウェッジ形のツール４７のボンディング面には
３ ｐｒｎの高さで幅７０−の凸部４８がＡｕワイヤ３
４と直交する方向で形成されれている。このウェッジ形
のツール４７を用いてバンプ電極を形成するには、第５
図（ａ）に示すようにウェッジ形のツール４７にセット
されたφ５０−Ａｕワイヤ３４を半導体素子２１のＭ電
極２２上に降下させ、超音波及び４０ｇの加圧力をかけ
てＡｕワイヤ３４を電極２２に接合する。このときボン
ディング面の凸部４８はＡｕワイヤ３４の接合部の上部
でＡｕワイヤ３４を押圧し同ワイヤに凹部を形成する。The bonding surface of the wedge-shaped tool 47 in FIG.
It is formed in a direction perpendicular to 4. In order to form a bump electrode using this wedge-shaped tool 47, the fifth
As shown in Figure (a), the φ50-Au wire 34 set in a wedge-shaped tool 47 is lowered onto the M electrode 22 of the semiconductor element 21, and ultrasonic waves and a pressing force of 40 g are applied to move the Au wire 34 into the electrode. 22. At this time, the convex portion 48 on the bonding surface presses the Au wire 34 above the bonding portion of the Au wire 34 to form a concave portion in the wire.
この後第５図（ｔ））に示すように、ウェッジ形のツ一
ル４７を上昇してＡｕワイヤ３４を切断してＡｕバンプ
電極４６を半導体素子２１上のＭ電極２２上に形成する
。このときＡｕバンプ電極４６の表面にはウェッジ形の
ツール４７の凸部４８で型押しされた３−の深さで幅７
０μｍの凹部溝が形成されている。このときのＡｕバン
プ電極の高さは１６−で形成することが出来た。Thereafter, as shown in FIG. 5(t), the wedge-shaped tool 47 is raised to cut the Au wire 34 and form an Au bump electrode 46 on the M electrode 22 on the semiconductor element 21. At this time, the surface of the Au bump electrode 46 is embossed with a protrusion 48 of a wedge-shaped tool 47 to a depth of 3- and a width of 7.
A concave groove of 0 μm is formed. At this time, the height of the Au bump electrode could be formed at 16-.
以上の工程を繰り返して半導体素子２１の所定のＭ電極
２２上にＡｕバンプ電極４６を形成した。The above steps were repeated to form Au bump electrodes 46 on predetermined M electrodes 22 of the semiconductor element 21.
第５図で形成した凹部を有するＡｕバンプ電極４６にイ
ンナーリード接合を行うと、第６図に示すようにフィン
ガーリード４９はＡｕバンプ電極４６の凹部溝内に嵌ま
り込むので、フィンガーリード４９がＡｕバンプ電極４
６からずれ落ちることなく、良好なインナーリード接合
を行うことが出来る。When the inner lead is bonded to the Au bump electrode 46 having the recess formed in FIG. 5, the finger lead 49 fits into the recess groove of the Au bump electrode 46 as shown in FIG. Au bump electrode 4
Good inner lead bonding can be performed without slipping from the inner lead.
実施例４
第７図は本発明の第四の実施例を説明するためのバンプ
電極形成工程の断面図である。第７図において、５１は
半導体素子、５２はＣｕ電極、５３は窒化シリコンによ
る保護膜、５４はφ１００ｎのＳｎ − Ｐｂ共晶はん
だワイヤ、５６ははんだバンプ電極、５７はウェッジ形
のツールである。Embodiment 4 FIG. 7 is a sectional view of a bump electrode forming process for explaining a fourth embodiment of the present invention. In FIG. 7, 51 is a semiconductor element, 52 is a Cu electrode, 53 is a protective film made of silicon nitride, 54 is a Sn--Pb eutectic solder wire with a diameter of 100 nm, 56 is a solder bump electrode, and 57 is a wedge-shaped tool.
第７図（ａ）に示すようにウェッジ形のツール５７にセ
ットされたφ１ ０ ０ｐｍＳｎ−Ｐｂ共晶はんだワイ
ヤ５４を半導体素子５１のＣｕ電極５２上に降下させ、
超音波及び１００ｇの加圧力をかけてはんだワイヤ５４
をＣｕｔｉ極５２に接合した。このときはんだワイヤ５
４の先端は、本図のようにウェッジ形のツール５７から
はみ出しても良い。As shown in FIG. 7(a), a φ100 pm Sn-Pb eutectic solder wire 54 set in a wedge-shaped tool 57 is lowered onto the Cu electrode 52 of the semiconductor element 51.
Solder wire 54 by applying ultrasonic waves and a pressure of 100 g.
was connected to the Cuti electrode 52. At this time, solder wire 5
The tip of 4 may protrude from the wedge-shaped tool 57 as shown in this figure.
この後第７図（ｂ）に示すように、ウェッジ形のツール
５７を上昇してはんだワイヤ５４を接合端部から切断し
てはんだ片５５を半導体素子５１上のＣｕ電極５２上に
形成した。Thereafter, as shown in FIG. 7(b), the wedge-shaped tool 57 was raised to cut the solder wire 54 from the joint end, thereby forming a solder piece 55 on the Cu electrode 52 on the semiconductor element 51.
以上の工程を繰り返して半導体素子５１の所定のＣｕ電
極５２上にはんだ片５５をを形成した。The above steps were repeated to form solder pieces 55 on predetermined Cu electrodes 52 of the semiconductor element 51.
次に２５０″Ｃに加熱してはんだ片５５を溶融し第７図
（Ｃ）に示す球状のバンプ電極５６をＣｕｔ極５２上に
形成した。この結果高さ１２０ｍのバンプ電極を形成す
ることが出来た．
（発明の効果）
以上述べた本発明はウェッジ形ツールではんだ，／Ｖ，
Ｃｕｔ Ａｕ等の金属ワイヤを電子部品の電掻上に押
圧接合後、押圧接合した金属ワイヤの接合端部からワイ
ヤを切断してはんだ， Ａ！， Ｃｕ， Ａｕ等のバン
プ電極を形成したものであり、本発明によればウエーハ
状態もしくはチップ状態の半導体素子及び基板、チップ
部品等の電子部品に、多大な製造設備及び複雑な製造工
程を用いることなく、簡便にそして平坦な表面形状を有
するバンプ電極を形成することが出来るので、今まで困
難であったバンプ電極がないチップ状態の電子部品でも
ＴＡＢやフリップチップ等のバンプ接続を容易に行うこ
とが出来、その接続性及び信顛性を向上することが出来
る。更に、ウェッジ形のツールのバックラジアス部に突
起を設けることにより、接合端部からのワイヤの切断性
が向上して、切断面でのパリ発生を低減するので、前記
の接続性及び信転性を更に向上することが出来る。ＴＡ
Ｂ接続用バンプ電極形成においては、ウェッジ形のツー
ルのボンディング面の一部に凸部を設け、バンプ電極表
面に凹部溝が出来るようにバンプ電極を形成するので、
インナーリード接合時にフィンガーリードがバンプ電極
表面で安定し、接続性の良好なインナーリード接合を行
うことが出来る。又、フリップチップ接続用に球状バン
プを形成する場合には、ウェッジ形のツールで金属ワイ
ヤを接合後に接合金属片を加熱溶融するようにしたので
、容易にかつ良好な球状化したバンプ電極を形成するこ
とが出来る。Next, the solder piece 55 was melted by heating to 250"C, and a spherical bump electrode 56 shown in FIG. (Effect of the invention) The present invention described above uses a wedge-shaped tool to solder, /V,
After press-bonding a metal wire such as Cut Au onto the electric scraper of an electronic component, cut the wire from the joint end of the press-bonded metal wire and solder. A! , Cu, Au, etc., and according to the present invention, a large amount of manufacturing equipment and complicated manufacturing processes are used for electronic components such as semiconductor elements and substrates in wafer state or chip state, and chip parts. Since bump electrodes with a flat surface can be easily formed without any bump electrodes, it is now possible to easily connect bumps such as TAB or flip chips to electronic components in the form of chips without bump electrodes, which has been difficult until now. It is possible to improve connectivity and reliability. Furthermore, by providing a protrusion on the back radius of the wedge-shaped tool, the ease of cutting the wire from the joint end is improved and the occurrence of pars at the cut surface is reduced, thereby improving the connectivity and reliability described above. can be further improved. T.A.
In forming the bump electrode for B connection, a convex portion is provided on a part of the bonding surface of the wedge-shaped tool, and the bump electrode is formed so that a concave groove is formed on the surface of the bump electrode.
The finger leads are stabilized on the bump electrode surface during inner lead bonding, and inner lead bonding with good connectivity can be achieved. In addition, when forming spherical bumps for flip-chip connections, we used a wedge-shaped tool to join the metal wires and then heated and melted the joined metal pieces, making it easy to form good spherical bump electrodes. You can.
第１図〜第７図は本発明に係わるウェッジ形のツール、
バンプ電極形成工程及び接続状態の断面図を示し、第８
図〜第１１図は従来のバンプ電極形成工程及び接続状態
の断面図を示す。
１，１１，２１．５１・・・半導体素子、２，１２，２
２．５２・・・半導体素子上の電極、３，２３．５３・
・・保護膜、４・・・バリャメタル、５・・・レジスト
、６，１６，２６，３６，４６．５６・・・バンプ電極
、１７，３１・・・基板、１８．３２・・・基板上の電
極、１９，４９・・・フィンガーリード、２４，３４．
５４・・・金属ワイヤ、２７．３７，４７．５７・・・
ウェッジ形のツール、３８・・・ウェッジ形のツールの
バックラジアス部の突起、４８・・・ウェッジ形のツー
ルの凸部、５５・・・接合された金属片。
第２図
（ａ）
第３図
（ｂ）
−１０′
第８図
第７図
（ａ）
（ｂ）
（Ｃ）
第９図
第１０図
第１１因1 to 7 show a wedge-shaped tool according to the present invention,
The eighth figure shows a cross-sectional view of the bump electrode formation process and connection state.
1 to 11 show cross-sectional views of the conventional bump electrode forming process and connection state. 1, 11, 21.51... semiconductor element, 2, 12, 2
2.52... Electrode on semiconductor element, 3,23.53.
...Protective film, 4... Barrier metal, 5... Resist, 6, 16, 26, 36, 46.56... Bump electrode, 17, 31... Substrate, 18.32... On substrate electrodes, 19, 49... finger leads, 24, 34.
54...Metal wire, 27.37, 47.57...
Wedge-shaped tool, 38... Protrusion of back radius portion of wedge-shaped tool, 48... Convex portion of wedge-shaped tool, 55... Joined metal piece. Figure 2 (a) Figure 3 (b) -10' Figure 8 Figure 7 (a) (b) (C) Figure 9 Figure 10 Factor 11
Claims (4)
ジ形のツールで金属ワイヤを電子部品の電極に押圧接合
後、押圧接合した金属の接合端部からワイヤを切断して
電子部品の電極上に金属バンプを形成することを特徴と
するバンプ電極形成方法。(1) In a method for forming bump electrodes on electronic components, a wedge-shaped tool is used to pressure bond a metal wire to an electrode on an electronic component, and then the wire is cut from the bonded end of the press-bonded metal to form a metal wire on the electrode of an electronic component. A method for forming a bump electrode, the method comprising forming a bump.
アス部が、金属ワイヤを押圧するボンディング面より突
起していることを特徴とするバンプ電極形成方法。(2) A method for forming a bump electrode, characterized in that the back radius portion of the wedge-shaped tool according to claim 1 protrudes from a bonding surface that presses the metal wire.
属ワイヤを押圧するボンディング面の一部に金属ワイヤ
と同一方向もしくは直交する方向あるいは両方向に凸部
を有していることを特徴とするバンプ電極形成方法。(3) The wedge-shaped tool according to claim 1 or 2 is characterized in that a part of the bonding surface that presses the metal wire has a convex portion in the same direction as the metal wire, in a direction perpendicular to the metal wire, or in both directions. A method for forming bump electrodes.
せて形状を球状化させることを特徴とするバンプ電極形
成方法。(4) A method for forming a bump electrode, comprising heating and melting the metal bump according to claim 1 or 2 to make the metal bump spherical.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5847589A JPH02237119A (en) | 1989-03-10 | 1989-03-10 | Formation of bump electrode |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5847589A JPH02237119A (en) | 1989-03-10 | 1989-03-10 | Formation of bump electrode |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH02237119A true JPH02237119A (en) | 1990-09-19 |
Family
ID=13085459
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP5847589A Pending JPH02237119A (en) | 1989-03-10 | 1989-03-10 | Formation of bump electrode |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH02237119A (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2009530872A (en) * | 2006-03-20 | 2009-08-27 | フェアチャイルド・セミコンダクター・コーポレーション | Aluminum bump bonding for thin aluminum wires |
| JP2011151322A (en) * | 2010-01-25 | 2011-08-04 | Japan Aviation Electronics Industry Ltd | Flip-chip mounting structure and flip-chip mounting method |
| WO2013067270A1 (en) * | 2011-11-04 | 2013-05-10 | Invensas Corporation | Bonding wedge |
| JP2013187383A (en) * | 2012-03-08 | 2013-09-19 | Denso Corp | Method for manufacturing bump structure |
| JP2016001752A (en) * | 2015-08-25 | 2016-01-07 | 日本航空電子工業株式会社 | Flip-chip mounting structure and flip-chip mounting method, and using method of flip-chip mounting structure |
-
1989
- 1989-03-10 JP JP5847589A patent/JPH02237119A/en active Pending
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2009530872A (en) * | 2006-03-20 | 2009-08-27 | フェアチャイルド・セミコンダクター・コーポレーション | Aluminum bump bonding for thin aluminum wires |
| JP2011151322A (en) * | 2010-01-25 | 2011-08-04 | Japan Aviation Electronics Industry Ltd | Flip-chip mounting structure and flip-chip mounting method |
| EP2530708A1 (en) * | 2010-01-25 | 2012-12-05 | Japan Aviation Electronics Industry, Limited | Flip-chip mounting structure and flip-chip mounting method |
| EP2530708A4 (en) * | 2010-01-25 | 2014-01-22 | Japan Aviation Electron | Flip-chip mounting structure and flip-chip mounting method |
| WO2013067270A1 (en) * | 2011-11-04 | 2013-05-10 | Invensas Corporation | Bonding wedge |
| JP2013187383A (en) * | 2012-03-08 | 2013-09-19 | Denso Corp | Method for manufacturing bump structure |
| JP2016001752A (en) * | 2015-08-25 | 2016-01-07 | 日本航空電子工業株式会社 | Flip-chip mounting structure and flip-chip mounting method, and using method of flip-chip mounting structure |
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