JP3322642B2 - Method for manufacturing semiconductor device - Google Patents

Method for manufacturing semiconductor device

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Publication number
JP3322642B2
JP3322642B2 JP27353798A JP27353798A JP3322642B2 JP 3322642 B2 JP3322642 B2 JP 3322642B2 JP 27353798 A JP27353798 A JP 27353798A JP 27353798 A JP27353798 A JP 27353798A JP 3322642 B2 JP3322642 B2 JP 3322642B2
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JP
Japan
Prior art keywords
capillary
wire
tip
diameter
gold
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Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP27353798A
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Japanese (ja)
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JP2000106381A (en
Inventor
誠 坪野谷
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sanyo Electric Co Ltd
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Sanyo Electric Co Ltd
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Priority to JP27353798A priority Critical patent/JP3322642B2/en
Publication of JP2000106381A publication Critical patent/JP2000106381A/en
Application granted granted Critical
Publication of JP3322642B2 publication Critical patent/JP3322642B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies
    • H01L24/78—Apparatus for connecting with wire connectors
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    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
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    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
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    • H01L2224/48477—Connecting portions connected to auxiliary connecting means on the bonding areas, e.g. pre-ball, wedge-on-ball, ball-on-ball between the wire connector and the bonding area being a pre-ball (i.e. a ball formed by capillary bonding)
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    • H01L2224/48479—Connecting portions connected to auxiliary connecting means on the bonding areas, e.g. pre-ball, wedge-on-ball, ball-on-ball between the wire connector and the bonding area being a pre-ball (i.e. a ball formed by capillary bonding) the connecting portion being a wedge bond, i.e. wedge on pre-ball on the semiconductor or solid-state body
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    • H01L2224/48599—Principal constituent of the connecting portion of the wire connector being Gold (Au)
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Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【０００１】[0001]

【発明の属する技術分野】本発明は、電極パッド上にバ
ンプ電極を形成した半導体装置の製造方法に関する。The present invention relates to a method for manufacturing a semiconductor device having bump electrodes formed on electrode pads.

【０００２】[0002]

【従来の技術】２つの電極端子間を電気接続する技術と
して、ワイヤボンディング技術が一般的である。この技
術では、最初にワイヤの先端部分を固着することを１ｓ
ｔボンド、次いでワイヤの終端部分を固着することを２
ｎｄボンドと称している。２ｎｄボンドにおいては、ワ
イヤを押し当てて固着すると同時に、キャピラリの先端
でワイヤ側部を押し潰して切断する（ステッチボンド）
という動作を同時に行っている。被接続部に対してキャ
ピラリの先端が物理的に接触するので、半導体チップ上
に形成した電極パッドに対してステッチボンドを行うこ
とは困難とされている。しかし、マルチチップ構成な
ど、電極パッドと電極パッドとを直接ワイヤで接続した
いという要求は強い。2. Description of the Related Art As a technique for electrically connecting two electrode terminals, a wire bonding technique is generally used. In this technique, firstly, fixing the tip of the wire is performed for 1 second.
t bonding and then securing the end of the wire to 2
This is called an nd bond. In the 2nd bond, the wire is pressed and fixed, and at the same time, the side of the wire is crushed and cut at the tip of the capillary (stitch bond).
Is performed at the same time. Since the tip of the capillary physically contacts the connected portion, it is difficult to perform stitch bonding on the electrode pad formed on the semiconductor chip. However, there is a strong demand for connecting electrode pads directly with wires, such as in a multi-chip configuration.

【０００３】そこで、図４に示したように、半導体チッ
プ１の電極パッド２と他の半導体チップ３の電極パッド
４とを直接的に電気接続するに際し、ステッチボンドを
受ける電極パッド４上にバンプ電極５を形成し、該バン
プ電極５上にワイヤ６を固着する手法が取られている
（例えば、特許公開平成４−２９４５５２号）。バンプ
電極５が緩衝剤となって、キャピラリによる機械的衝撃
を緩和するものである。Therefore, as shown in FIG. 4, when an electrode pad 2 of a semiconductor chip 1 is directly electrically connected to an electrode pad 4 of another semiconductor chip 3, a bump is formed on the electrode pad 4 which receives a stitch bond. A method of forming the electrode 5 and fixing the wire 6 on the bump electrode 5 has been adopted (for example, Japanese Patent Application Laid-Open No. Hei 4-294552). The bump electrode 5 serves as a buffer to reduce the mechanical impact of the capillary.

【０００４】また、軽薄短小化の時流に沿って、電極パ
ッド上に形成したバンプ電極５を接点にして、半導体チ
ップを対向接着することによりワイヤレス構造を実現す
る目的でも用いられる。[0004] Further, it is also used for the purpose of realizing a wireless structure by adhering semiconductor chips to each other with a bump electrode 5 formed on an electrode pad as a contact point in accordance with the trend of miniaturization.

【０００５】そして、バンプ電極５の形成方法として、
従来のメッキ法に代わり、既存のワイヤボンディング装
置をそのまま流用できるボールバンプが注目され始めて
いる。[0005] As a method of forming the bump electrode 5,
In place of the conventional plating method, a ball bump that can use an existing wire bonding apparatus as it is has been receiving attention.

【０００６】従来のボールバンプによるバンプ電極の形
成方法を図５に示した。FIG. 5 shows a conventional method of forming a bump electrode using a ball bump.

【０００７】図５（Ａ）参照：まずは半導体チップ３に
形成した電極パッド４に対して、ワイヤ６を挿通したキ
ャピラリ７を位置あわせし、ワイヤ６の先端に金ボール
８を形成しておく。Referring to FIG. 5A, first, a capillary 7 into which a wire 6 is inserted is positioned with respect to an electrode pad 4 formed on a semiconductor chip 3, and a gold ball 8 is formed at the tip of the wire 6.

【０００８】図５（Ｂ）参照：キャピラリ７を下降さ
せ、金ボール８を電極パッド４表面に押圧して接着す
る。Referring to FIG. 5B, the capillary 7 is lowered, and the gold ball 8 is pressed against and adhered to the surface of the electrode pad 4.

【０００９】図５（Ｃ）参照：キャピラリ７を垂直上昇
し、次いでキャピラリ７を水平移動させる。この時の移
動距離は、キャピラリ７先端の直径の、約半分の距離と
する。Referring to FIG. 5C, the capillary 7 is vertically moved up, and then the capillary 7 is moved horizontally. The moving distance at this time is set to be about half the diameter of the tip of the capillary 7.

【００１０】図５（Ｄ）参照：キャピラリ７を再度下降
させ、固着した金ボール８の上にステッチボンドを行
う。キャピラリ７の先端部分でワイヤ６の側部を押圧
し、その圧力でワイヤ６を切断する。Referring to FIG. 5D, the capillary 7 is lowered again, and stitch bonding is performed on the fixed gold ball 8. The side of the wire 6 is pressed by the tip of the capillary 7, and the wire 6 is cut by the pressure.

【００１１】図５（Ｅ）参照：キャピラリ７を再び上昇
させて、電極パッド４上にボールバンプ９を形成する。
キャピラリ７には切断された後のワイヤ６がテイル長さ
ｔの分だけ突出する。テイル長さｔの部分は、その直後
に融解させて金ボール８を作る材料となる。Referring to FIG. 5E, the capillary 7 is raised again to form a ball bump 9 on the electrode pad 4.
The cut wire 6 protrudes from the capillary 7 by the length of the tail t. The portion having the tail length t is a material that is melted immediately thereafter to form the gold ball 8.

【００１２】[0012]

【発明が解決しようとする課題】しかしながら、キャピ
ラリ７を水平移動したときの位置精度が比較的甘く、例
えば先端の直径が１００μのキャピラリ７を半ピッチ
（５０〜６０μ）移動させたときには、５〜１０μの誤
差が生じる。金ワイヤ７自体は展性に優れた素材である
ため、ワイヤ７が切れる／切れない等、工程の安定性が
悪い欠点があった。加えて、この誤差によってテイル長
さｔが安定せず、金ボール８の直径がばらつくという欠
点があった。However, when the capillary 7 is moved horizontally, the positional accuracy is relatively weak. For example, when the capillary 7 having a tip diameter of 100 μ is moved by a half pitch (50 to 60 μ), the position accuracy is 5 to 5 μm. An error of 10μ occurs. Since the gold wire 7 itself is a material excellent in malleability, there is a disadvantage that the stability of the process is poor such as the wire 7 being cut / not cut. In addition, the tail length t is not stabilized due to this error, and the diameter of the gold ball 8 varies.

【００１３】[0013]

【課題を解決するための手段】本発明は上述した従来の
課題に鑑み成されたもので、電極パッド上にバンプ電極
を形成した半導体装置の製造方法であって、先端にボー
ル部を形成した金属ワイヤを、キャピラリによって電極
パッド上に固着した後、前記キャピラリの先端が前記金
属ワイヤのワイヤ部分に位置するように前記キャピラリ
の高さを固定し、その位置で前記キャピラリを水平移動
させて前記金属ワイヤに剪断跡を残し、その後前記金属
ワイヤを引っ張って切断することを特徴とするものであ
る。SUMMARY OF THE INVENTION The present invention has been made in view of the above-mentioned conventional problems, and is a method of manufacturing a semiconductor device in which bump electrodes are formed on electrode pads. After the metal wire is fixed on the electrode pad by a capillary, the height of the capillary is fixed so that the tip of the capillary is located at the wire portion of the metal wire, and the capillary is horizontally moved at that position to thereby move the capillary horizontally. It is characterized in that a shear mark is left on the metal wire, and then the metal wire is pulled and cut.

【００１４】[0014]

【発明の実施の形態】以下に本発明の一実施の形態を、
図１、図２を用いて順に説明する。DESCRIPTION OF THE PREFERRED EMBODIMENTS One embodiment of the present invention will be described below.
This will be described in order with reference to FIGS.

【００１５】図１（Ａ）参照：集積回路網を形成した半
導体チップ１０のアルミ電極パッド１１上方にキャピラ
リ１２を移動する。キャピラリ１２の中心孔１３には直
径が２０〜３０μ程度の金ワイヤ１４が挿通されてお
り、キャピラリ１２上方にはワイヤ１４を挟持するため
のクランパ１５が配置されている。キャピラリ１２先端
部は直径１００μ程度の大きさを有する。そして、金ワ
イヤ１４の先端部にスパーク１６を飛ばしてこれを融解
させ、表面張力により金ボール（次図に示す）を形成す
る。この段階でクランパ１５は閉じている。 図１（Ｂ）参照：金ボール１７を形成した状態を示して
いる。先の図でキャピラリ１２から飛び出たワイヤ１４
の先端に金ボール１７が形成される。直径は６０〜８０
μである。この直径は、スパーク１６の電流値と時間で
制御する。そして、次に備えてクランパ１５を開け、ワ
イヤ１４を解放する。Referring to FIG. 1A, a capillary 12 is moved above an aluminum electrode pad 11 of a semiconductor chip 10 on which an integrated circuit network is formed. A gold wire 14 having a diameter of about 20 to 30 μ is inserted into a center hole 13 of the capillary 12, and a clamper 15 for holding the wire 14 is disposed above the capillary 12. The tip of the capillary 12 has a size of about 100 μm in diameter. Then, a spark 16 is blown to the tip of the gold wire 14 to melt it, and a gold ball (shown in the next figure) is formed by surface tension. At this stage, the clamper 15 is closed. FIG. 1B shows a state where the gold ball 17 is formed. The wire 14 protruding from the capillary 12 in the previous figure
A gold ball 17 is formed at the tip of. 60-80 diameter
μ. This diameter is controlled by the current value of the spark 16 and the time. Then, the clamper 15 is opened to prepare for the next, and the wire 14 is released.

【００１６】図１（Ｃ）参照：金ボール１７を押圧した
状態を示している。キャピラリ１２を下降させることに
より、金ボール１７を電極パッド１１表面に当接し、一
定の圧力を加える。同時にキャピラリ１２を通して超音
波振動を与え且つ加熱し、金ボール１７と電極パッド１
２とを固着する。FIG. 1C shows a state in which the gold ball 17 is pressed. By lowering the capillary 12, the gold ball 17 is brought into contact with the surface of the electrode pad 11, and a certain pressure is applied. At the same time, ultrasonic vibration is applied through the capillary 12 and heated, and the gold ball 17 and the electrode pad 1 are heated.
2 is fixed.

【００１７】図１（Ｄ）参照：金ボール１７の接着が終
了した状態を示している。金ボール１７と金ワイヤ１４
を残して、キャピラリ１２を垂直に上昇させる。FIG. 1D shows a state in which the bonding of the gold ball 17 has been completed. Gold ball 17 and gold wire 14
, The capillary 12 is raised vertically.

【００１８】図２（Ａ）参照：キャピラリ１２を再度垂
直に下降させた状態を示している。キャピラリ１２の水
平方向の位置はそのままで、その先端と金ボール１７の
上端（平坦部）との距離１８が１０〜３０μｍとなるよ
うな位置でキャピラリ１２を停止する。金ワイヤ１４の
付け根付近はキャピラリ１２内部に収納されず、露出し
た状態となる。FIG. 2A shows a state in which the capillary 12 is lowered vertically again. The capillary 12 is stopped at a position where the distance 18 between the tip of the capillary 12 and the upper end (flat portion) of the gold ball 17 is 10 to 30 μm while keeping the horizontal position of the capillary 12 as it is. The vicinity of the base of the gold wire 14 is not stored inside the capillary 12 and is exposed.

【００１９】図２（Ｂ）参照：キャピラリ１２を水平移
動した状態を示している。上記の距離１８を維持した上
で、金ワイヤ１４の直径の３分の２を超える距離（図示
１９）だけ移動させる。例えば、キャピラリ１２先端部
の穴の直径が４０μであるときは２５μ〜３５μだけ移
動する。金ワイヤ１４はキャピラリ１２の先端部で途中
まで剪断され、糸を引くように細い部分２０でかろうじ
て連続している状態となる。FIG. 2B shows a state in which the capillary 12 is horizontally moved. While maintaining the distance 18 described above, the gold wire 14 is moved by a distance exceeding two-thirds of the diameter (shown in FIG. 19). For example, when the diameter of the hole at the tip of the capillary 12 is 40 μm, it moves by 25 μm to 35 μm. The gold wire 14 is sheared halfway at the tip of the capillary 12 and is barely continuous at the thin portion 20 so as to draw a thread.

【００２０】本工程で剪断を与えるために、図２（Ａ）
での距離１８は重要な意味を持つ。この距離１８が大き
すぎると金ワイヤ１４が塑性変形するだけで細い部分２
０を作れなくなるし、距離１８が小さすぎると、接合し
た金ボール１７を剥がすことになる。In order to give shear in this step, FIG.
The distance 18 at is significant. If this distance 18 is too large, the gold wire 14 is only plastically deformed and the thin portion 2
If the distance becomes too small and the distance 18 is too small, the bonded gold ball 17 is peeled off.

【００２１】図３（Ａ）に、参照のための、キャピラリ
１４の先端部の拡大断面図を示した。キャピラリ１４の
貫通穴１３は、直径が金ワイヤ１４よりも比較的大きい
第１の部分１３ａと、直径が金ワイヤ１４に対して少し
だけ大きい第２の部分１３ｂと、所定のテーパー角度で
直径が拡大する第３の部分１３ｃとを有する。ボンディ
ング時には、押圧部１４ａが金ワイヤ１４を押しつぶす
ことになる。FIG. 3A is an enlarged sectional view of the tip of the capillary 14 for reference. The through hole 13 of the capillary 14 has a first portion 13a having a diameter relatively larger than the gold wire 14, a second portion 13b having a diameter slightly larger than the gold wire 14, and a diameter having a predetermined taper angle. And a third portion 13c that expands. At the time of bonding, the pressing portion 14a crushes the gold wire 14.

【００２２】図３（ｂ）は斯かるキャピラリにて１ｓｔ
ボンドを行った直後の金ボール１７を示している。金ボ
ール１７が押しつぶされることにより、その材料が貫通
孔１３ｂ、１３ｃ内部を充満するように塑性変形を受け
る。その結果、金ボール１７の上部には、貫通孔１３ｃ
に対応する傾斜部１７ａと、貫通孔１３ｂに対応する太
い部分１７ｂとが形成され、太い部分１７ｂから塑性変
形を受けない金ワイヤ１４が本来の直径Φ１で連続する
ことになる。太い部分１７ｂは貫通孔１３ｂの内径Ｈに
対応した直径Φ２を有する。また、金ボール１７の押圧
表面１７ａから、且つキャピラリ１２先端から貫通孔１
３ｂの上部までの距離ｔ１に対応する高さｔ２を有する
ことになる。上記の工程における剪断は、前記本来の直
径Φ１と前記対応した直径Φ２との差を利用するのが好
ましい。従って、距離１８とは、キャピラリ１２先端か
ら貫通孔１３ｂの上部までの距離ｔ１に対応する高さｔ
２にほぼ等しく、キャピラリ１２の先端が金ワイヤ１４
が直径Φ２から直径Φ１に変化した箇所の直ぐ上部に位
置して、直径Φ１の部分で剪断を行う。FIG. 3 (b) shows the first state of the capillary.
The gold ball 17 immediately after bonding is shown. When the gold ball 17 is crushed, the material undergoes plastic deformation so as to fill the insides of the through holes 13b and 13c. As a result, the through hole 13c
Is formed, and a thick portion 17b corresponding to the through-hole 13b is formed, so that the gold wire 14 that is not subjected to plastic deformation from the thick portion 17b continues at the original diameter Φ1. The thick portion 17b has a diameter Φ2 corresponding to the inner diameter H of the through hole 13b. Further, the through hole 1 is formed from the pressing surface 17 a of the gold ball 17 and from the tip of the capillary 12.
It will have a height t2 corresponding to the distance t1 to the top of 3b. The shearing in the above step preferably utilizes the difference between the original diameter Φ1 and the corresponding diameter Φ2. Therefore, the distance 18 is the height t corresponding to the distance t1 from the tip of the capillary 12 to the upper part of the through hole 13b.
2 and the tip of the capillary 12 is the gold wire 14
Is located immediately above the point where the diameter has changed from the diameter Φ2 to the diameter Φ1, and shearing is performed at the portion of the diameter Φ1.

【００２３】図２（Ｃ）参照：図２（Ｂ）の工程を終了
した後、再びキャピラリ１２を垂直上昇させた状態を示
している。金ワイヤ１４と金ボール１７とが細い部分２
０だけで連続している状態を示した。FIG. 2C shows a state in which the capillary 12 is vertically raised again after the step of FIG. 2B is completed. Part 2 where the gold wire 14 and the gold ball 17 are thin
A continuous state was shown with only 0.

【００２４】図２（Ｄ）参照：金ワイヤ１４を切断した
状態を示した。直前の工程で金ワイヤ１４が所望の長さ
（テイル長さ２１）だけ突出するようにキャピラリ１２
を上昇させた後、今まで解放していたクランパ１５を閉
じて金ワイヤ１４を挟持し、上方に引き上げることで細
い部分２０を完全に切断する。そして電極パッド１１上
部にはボールバンプ２２が形成され、キャピラリ１２先
端にはテイル長さ２１の分だけ金ワイヤ１４が残る。FIG. 2D shows a state in which the gold wire 14 has been cut. In the immediately preceding step, the capillary 12 is set so that the gold wire 14 protrudes by a desired length (tail length 21).
Then, the clamper 15 that has been released is closed, the gold wire 14 is clamped, and the thin portion 20 is completely cut by pulling it upward. A ball bump 22 is formed on the electrode pad 11, and the gold wire 14 is left at the tip of the capillary 12 by the length of the tail 21.

【００２５】電極パッド１１上に形成したボールバンプ
２２は、その上にステッチボンドを行うことでチップー
チップ間を直接ワイヤボンドする用途にも用いられる
し、ボールバンプを接点とした対向接着の用途にも用い
ることができる。The ball bumps 22 formed on the electrode pads 11 can be used for direct wire bonding between chips by performing stitch bonding thereon, or for opposing bonding using ball bumps as contacts. Can be used.

【００２６】以上に説明した手法は、金ワイヤ１４の付
け根近傍で剪断による切断を行っている。従って、図２
（Ａ）の位置から図２（Ｃ）でキャピラリ１２を上昇さ
せてクランプ１５を閉じるまでの垂直方向の移動距離が
テイル長さ２１となり、切断される位置が安定するの
で、テイル長さ２１も安定する。このことは、次工程で
形成する金ボール１７の大きさを安定化させ、工程の安
定性を増大するものである。また、図２（Ｂ）での水平
方向の移動は、金ワイヤ１４の直径の３分の２より大き
な距離だけ移動すれば良いというものであり、距離がば
らついたとしてもテイル長さ２１には影響しない。これ
も工程の安定性を増大するものである。尚、上記実施の
形態において、図１（Ｄ）の動作を省いて、図１（Ｃ）
の状態から直接図２（Ａ）の状態に移行しても良い。In the method described above, cutting by shearing is performed near the base of the gold wire 14. Therefore, FIG.
The vertical movement distance from the position of (A) to raising the capillary 12 in FIG. 2 (C) and closing the clamp 15 is the tail length 21, and the cut position is stable. Stabilize. This stabilizes the size of the gold ball 17 formed in the next step and increases the stability of the step. Further, the horizontal movement in FIG. 2 (B) means that the gold wire 14 needs to be moved by a distance larger than two-thirds of the diameter of the gold wire 14. Even if the distance varies, the tail length 21 is not changed. It does not affect. This also increases the stability of the process. Note that, in the above embodiment, the operation in FIG.
The state shown in FIG. 2A may be directly shifted from the state shown in FIG.

【００２７】[0027]

【発明の効果】以上に説明した通り、本発明によれば、
キャピラリ１２の高さを確定して横移動することによ
り、金ワイヤ１４を剪断により切断するので、テイル長
さ２１が安定し、工程の安定性を増大する利点を有す
る。また、ボールバンプ２２の大きさのばらつきを低減
できる利点をも有する。As described above, according to the present invention,
Since the gold wire 14 is cut by shearing by determining the height of the capillary 12 and laterally moving, the tail length 21 is stabilized, and there is an advantage that the stability of the process is increased. In addition, there is an advantage that variation in the size of the ball bumps 22 can be reduced.

【図面の簡単な説明】[Brief description of the drawings]

【図１】本発明を説明するための断面図である。FIG. 1 is a cross-sectional view for explaining the present invention.

【図２】本発明を説明するための断面図である。FIG. 2 is a cross-sectional view for explaining the present invention.

【図３】本発明を説明するための断面図である。FIG. 3 is a cross-sectional view for explaining the present invention.

【図４】従来例を説明するための断面図である。FIG. 4 is a cross-sectional view for explaining a conventional example.

【図５】従来例を説明するための断面図である。FIG. 5 is a sectional view for explaining a conventional example.

Claims (3)

(57)【特許請求の範囲】(57) [Claims] 【請求項１】 電極パッド上にバンプ電極を形成した半
導体装置の製造方法であって、 先端にボール部を形成した金属ワイヤを、キャピラリに
よって電極パッド上に固着した後、前記キャピラリを垂
直に上昇してクランプを閉じた後に再度下降させて前記
キャピラリの先端と前記ボール部の上端の距離が１０〜
３０μｍとなる位置で前記キャピラリを停止し、その位
置で前記キャピラリを水平に前記金属ワイヤの直径の３
分の２を越える距離だけ移動させて前記金属ワイヤに前
記キャピラリの先端部で形成される剪断跡を残し、その
後前記金属ワイヤを引っ張って前記剪断跡で切断するこ
とで前記ボール部に残されるテイルの長さを揃えること
を特徴とする半導体装置の製造方法。1. A method of manufacturing a semiconductor device in which a bump electrode is formed on an electrode pad, wherein a metal wire having a ball portion formed at a tip is fixed on the electrode pad by a capillary, and then the capillary is dropped.
After ascending straight and closing the clamp, lowering it again
The distance between the tip of the capillary and the upper end of the ball is 10
Stop the capillary at the position where the thickness becomes 30 μm, and
Place the capillary horizontally at 3 mm of the diameter of the metal wire.
The metal wire by a distance of more than two-half
Leaving the shear mark formed at the tip of the capillary,
After that, the metal wire is pulled and cut at the shear mark.
Wherein the lengths of the tails left in the ball portion are made uniform . 【請求項２】 前記剪断跡を残す工程で前記金属ワイヤ
が完全には切断されていないことを特徴とする請求項１
記載の半導体装置の製造方法。2. The metal wire is not completely cut in the step of leaving a shear mark.
The manufacturing method of the semiconductor device described in the above. 【請求項３】 前記キャピラリを水平移動する距離が前
記金属ワイヤの直径よりも大であることを特徴とする請
求項１記載の半導体装置の製造方法。3. The method according to claim 1, wherein a distance for horizontally moving the capillary is larger than a diameter of the metal wire.
JP27353798A 1998-09-28 1998-09-28 Method for manufacturing semiconductor device Expired - Fee Related JP3322642B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP27353798A JP3322642B2 (en) 1998-09-28 1998-09-28 Method for manufacturing semiconductor device

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Application Number Priority Date Filing Date Title
JP27353798A JP3322642B2 (en) 1998-09-28 1998-09-28 Method for manufacturing semiconductor device

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JP2000106381A JP2000106381A (en) 2000-04-11
JP3322642B2 true JP3322642B2 (en) 2002-09-09

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Country Link
JP (1) JP3322642B2 (en)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7229906B2 (en) * 2002-09-19 2007-06-12 Kulicke And Soffa Industries, Inc. Method and apparatus for forming bumps for semiconductor interconnections using a wire bonding machine
JP2008066331A (en) * 2006-09-04 2008-03-21 Renesas Technology Corp Manufacturing method of semiconductor device
JP2009054950A (en) * 2007-08-29 2009-03-12 Tokai Rika Co Ltd Bump forming method
JP2015142011A (en) * 2014-01-29 2015-08-03 スタンレー電気株式会社 Semiconductor light-emitting device and method for manufacturing the same

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