JP2009054950A - Bump forming method - Google Patents
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- JP2009054950A JP2009054950A JP2007222681A JP2007222681A JP2009054950A JP 2009054950 A JP2009054950 A JP 2009054950A JP 2007222681 A JP2007222681 A JP 2007222681A JP 2007222681 A JP2007222681 A JP 2007222681A JP 2009054950 A JP2009054950 A JP 2009054950A
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
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Abstract
Description
本発明は、バンプ形成方法に関する。 The present invention relates to a bump forming method.
従来、半導体チップ等の接続端子と該半導体チップが搭載される基板等の搭載装置側の接続端子とに金属細線ワイヤを溶着して電気的に接続するワイヤボンディング装置がある。特許文献１に示すように、ワイヤボンディング装置は、ワイヤが挿通されたキャピラリと、キャピラリの先端に突出するワイヤとの間で放電を行うための電気トーチと、キャピラリの先端を加熱するためのヒータと、キャピラリに超音波振動を与えるための振動付与手段とを備えている。ワイヤボンディング装置は、半導体チップの第１接続端子及び搭載装置側の第２接続端子の間をワイヤボンディングするに際して、まず、キャピラリの先端側に突出するワイヤとキャピラリの先端側に移動させた電気トーチとの間で放電を行い、該ワイヤを溶融させてボールを形成する。そして、該ボールを、キャピラリの先端面で前記第１接続端子に押圧して接合する。そして、前記第２接続端子上にキャピラリを移動させ、該キャピラリの先端面でワイヤを第２接続端子に押しつけるとともに熱・超音波を加えて溶着させる。このとき、ワイヤの溶着部には、第２接続端子と完全に接合されるステッチボンドと、暫定的に接合されるテイルボンドが形成される。そして、ワイヤをテイルボンドによって第２接続端子に残したままキャピラリを上方へ移動させ、その後、ワイヤをクランプした状態でキャピラリを上方へ移動させることによりワイヤを引っ張ってテイルボンドの部分で破断させる。これにより、第１接続端子と第２接続端子とがワイヤにて電気的に接続される。ワイヤボンディング装置は、ワイヤを破断した後にキャピラリの先端側に残ったワイヤ（テイル）とキャピラリの先端側に移動させた電気トーチとの間で放電を行い、該ワイヤを溶融させて、次のワイヤボンディングサイクルの為のボールを形成し、次のワイヤボンディングサイクルを連続して実行する。 2. Description of the Related Art Conventionally, there is a wire bonding apparatus in which a thin metal wire is welded and electrically connected to a connection terminal such as a semiconductor chip and a connection terminal on a mounting apparatus such as a substrate on which the semiconductor chip is mounted. As shown in Patent Document 1, a wire bonding apparatus includes an electric torch for performing discharge between a capillary through which a wire is inserted and a wire protruding from the tip of the capillary, and a heater for heating the tip of the capillary And vibration applying means for applying ultrasonic vibration to the capillary. In the wire bonding apparatus, when wire bonding is performed between the first connection terminal of the semiconductor chip and the second connection terminal on the mounting apparatus side, first, the wire protruding to the tip end side of the capillary and the electric torch moved to the tip end side of the capillary And a wire is melted to form a ball. Then, the ball is pressed and joined to the first connection terminal at the tip end face of the capillary. Then, the capillary is moved onto the second connection terminal, the wire is pressed against the second connection terminal at the tip end face of the capillary, and heat / ultrasonic waves are applied for welding. At this time, a stitch bond that is completely bonded to the second connection terminal and a tail bond that is temporarily bonded are formed in the weld portion of the wire. Then, the capillary is moved upward while leaving the wire on the second connection terminal by the tail bond, and then the capillary is moved upward while the wire is clamped, whereby the wire is pulled and broken at the tail bond portion. Thereby, the first connection terminal and the second connection terminal are electrically connected by the wire. The wire bonding apparatus discharges between a wire (tail) remaining on the tip end side of the capillary after breaking the wire and the electric torch moved to the tip end side of the capillary, melts the wire, and the next wire Balls for the bonding cycle are formed, and the next wire bonding cycle is continuously executed.
また、従来、ワイヤと接続端子との接続部分の電気的信頼性や機械的強度を向上させるべく、上述したワイヤボンディングに先立ち、接続端子上にバンプを形成する場合がある。特許文献１には、上述したワイヤボンディング装置を用いたバンプ形成方法が記載されている。ワイヤボンディング装置は、接続端子等の特定のバンプ形成対象にバンプを形成するに際して、まず、図１０（ａ）に示すように、通常のワイヤボンディングサイクルと同様、キャピラリ２の先端側に突出するワイヤ３とキャピラリ２の先端側に移動させた電気トーチ６との間で放電を行い、該ワイヤ３を溶融させてボール２０を形成する。そして、図１０（ｂ）に示すように、該ボール２０を、キャピラリ２の先端面で接続端子２１に押しつけて接合する。そして、図１０（ｃ）に示すように、接続端子２１にワイヤ３を残したままキャピラリ２を上方へ移動させた後、図１０（ｄ）に示すように、ワイヤ３をクランプした状態でキャピラリ２を上方へ移動させることによりワイヤ３を引っ張って破断させる。これにより、接続端子２１にバンプ２２が形成される。ワイヤボンディング装置１は、キャピラリ２側に残ったワイヤ３とキャピラリ２の先端側に移動させた電気トーチ６との間で放電を行い、該ワイヤ３を溶融させて上述したワイヤボンディングサイクルのためのボールを形成することで、バンプ２２を形成した後にワイヤボンディングサイクルを連続して行う。
しかしながら、従来のバンプ形成方法によれば、ボール２０の直上のワイヤ３の太さが略一定となるため、ワイヤ３の破断位置が特定されず、バンプ２２のひげ（バンプ２２側に残るワイヤ）２２ａの長さ及びバンプ２２の形状が安定しない。このため、キャピラリ２側に残るワイヤ３の長さが安定せず、次のワイヤボンディングサイクル、若しくは、バンプ形成サイクルのためのボール２０を形成することができない場合がある。その結果、次のワイヤボンディングサイクル、若しくは、バンプ形成サイクルを直ちに開始することができなくなり、生産性が悪くなってしまう。また、接続端子２１の表面状態によっては、バンプ２２がはがれ易くなる場合があり、接続端子２１とバンプ２２との間の接合性を向上させたいという要望がある。 However, according to the conventional bump forming method, since the thickness of the wire 3 immediately above the ball 20 is substantially constant, the breaking position of the wire 3 is not specified, and the whisker of the bump 22 (wire remaining on the bump 22 side). The length of 22a and the shape of the bump 22 are not stable. For this reason, the length of the wire 3 remaining on the capillary 2 side is not stable, and the ball 20 for the next wire bonding cycle or bump forming cycle may not be formed. As a result, the next wire bonding cycle or bump forming cycle cannot be started immediately, resulting in poor productivity. Further, depending on the surface state of the connection terminal 21, the bump 22 may be easily peeled off, and there is a demand for improving the bondability between the connection terminal 21 and the bump 22.
本発明は、こうした実情に鑑みてなされたものであって、その目的は、バンプ形成対象に対する接合性が高く安定したバンプを形成することが可能なバンプ形成方法を提供することにある。 The present invention has been made in view of such circumstances, and an object of the present invention is to provide a bump forming method capable of forming a highly stable bump having high bondability to a bump formation target.
請求項１に記載の発明は、キャピラリの先端側に開口する挿通孔に挿通されたワイヤを、前記キャピラリで接続対象に設定されるファーストボンド位置にある第１接続端子と、該第１接続端子に対応する前記接続対象又は前記接続対象とは異なる他の接続対象に設定されたセカンドボンド位置にある第２接続端子と、に順次押圧し溶着させて、前記第１接続端子及び前記第２接続端子を電気的に接続するワイヤボンディング装置によってバンプを形成するバンプ形成方法であって、前記ファーストボンド位置を特定のバンプ形成対象のバンプ形成位置に設定し、前記キャピラリの先端側に突出した前記ワイヤを溶融させて形成したボールを該バンプ形成位置に押圧して接合するファーストボンド工程と、前記セカンドボンド位置を前記ファーストボンド位置から前記ボールの径方向に前記挿通孔の半径以上ずらした位置に設定し、前記キャピラリの先端面で前記ボールの直上のワイヤを押圧し前記ボールに溶着させるセカンドボンド工程と、前記ワイヤを引っ張って破断させるワイヤ破断工程とを備えたことをその要旨とする。 According to the first aspect of the present invention, there is provided a first connection terminal at a first bond position at which a wire inserted through an insertion hole opened on a tip end side of a capillary is set as a connection target by the capillary, and the first connection terminal To the second connection terminal in the second bond position set to the connection object corresponding to the connection object or other connection object different from the connection object, and sequentially pressed and welded to the first connection terminal and the second connection A bump forming method in which bumps are formed by a wire bonding apparatus that electrically connects terminals, wherein the first bond position is set as a bump forming position of a specific bump forming target, and the wire protruding to the tip side of the capillary A first bond step in which a ball formed by melting the metal is pressed against the bump forming position and bonded, and the second bond position is A second bond step in which the wire is set to a position shifted from the to-bond position in the radial direction of the ball by a radius equal to or greater than the radius of the insertion hole, and the wire immediately above the ball is pressed by the tip end surface of the capillary and welded to the ball; The gist of the invention is that it includes a wire breaking step of pulling and breaking.
本発明によれば、セカンドボンド工程におけるセカンドボンド位置をファーストボンド位置からボールの径方向に挿通孔の半径以上ずらした位置に設定し、キャピラリの先端面でボールの直上のワイヤを押圧しボールに溶着させたため、ワイヤにおいてキャピラリの先端面で押圧された部分の肉厚が薄くなる。このため、ワイヤ破断工程において、ワイヤは、キャピラリの先端面で押圧された位置で破断することとなり、ワイヤの破断位置を特定することができる。よって、破断後にバンプに残るワイヤ（ひげ）の長さ及びバンプの形状を安定させることができるとともに、破断後にキャピラリ側に残るワイヤ（テイル）の長さを安定させることができる。また、ファーストボンド工程でバンプ形成対象に溶着したボールを、セカンドボンド工程で再度押圧して溶着させるため、バンプ形成対象に対するバンプの接合性を向上させることができる。よって、バンプ形成対象に対する接合性が高く安定したバンプを形成することができる。その結果、生産性を向上させることができる。 According to the present invention, the second bond position in the second bond step is set to a position shifted from the first bond position in the radial direction of the ball by the radius of the insertion hole or more, and the wire immediately above the ball is pressed onto the ball by the tip surface of the capillary. Because of the welding, the thickness of the portion of the wire pressed by the tip end face of the capillary is reduced. For this reason, in the wire breaking step, the wire is broken at the position pressed by the tip end face of the capillary, and the breaking position of the wire can be specified. Therefore, the length of the wire (whisker) remaining on the bump after breaking and the shape of the bump can be stabilized, and the length of the wire (tail) remaining on the capillary side after breaking can be stabilized. In addition, since the ball welded to the bump formation target in the first bond process is pressed and welded again in the second bond process, the bondability of the bump to the bump formation target can be improved. Therefore, it is possible to form a stable bump with high bondability to a bump formation target. As a result, productivity can be improved.
請求項２に記載の発明は、前記キャピラリの先端面は、外側に向かうほど基端側に傾斜することをその要旨とする。
本発明によれば、キャピラリの先端面は外側に向かうほど基端側に傾斜するため、セカンドボンド工程において、ボールの直上のワイヤを押圧して溶着させる際に溶融したボール若しくはワイヤは、キャピラリの外側であってボールの中心側へ押圧される。このため、溶融したボール若しくはワイヤがバンプの中心に集められ肉厚が確保されるので、バンプとワイヤとの接合性を向上させることができる。
The gist of the invention described in claim 2 is that the distal end surface of the capillary is inclined toward the proximal end as it goes outward.
According to the present invention, since the tip end surface of the capillary is inclined toward the base end as it goes outward, in the second bonding step, the molten ball or wire when the wire just above the ball is pressed and welded is The outer side is pressed toward the center of the ball. For this reason, since the melted ball or wire is collected at the center of the bump and the thickness is secured, the bonding property between the bump and the wire can be improved.
請求項３に記載の発明は、前記キャピラリの先端面における前記挿通孔の周囲には、面取り部が形成されたことをその要旨とする。
本発明によれば、セカンドボンド工程においてキャピラリの先端面における挿通孔の周囲に形成された面取り部で押圧されることにより、該面取り部で押圧された部分が肉厚となりワイヤの強度が確保される。このため、ワイヤ破断工程においてワイヤを引っ張る前にワイヤが破断してしまうことを好適に防止することが可能となり、キャピラリ側にボールを形成する際に必要なワイヤの長さを十分確保することが可能となり、バンプ形成対象に対する接合性が高く安定したバンプをより確実に連続して形成することができる。
The gist of the invention described in claim 3 is that a chamfered portion is formed around the insertion hole in the tip surface of the capillary.
According to the present invention, in the second bonding step, the chamfered portion formed around the insertion hole in the distal end surface of the capillary is pressed, so that the portion pressed by the chamfered portion becomes thick and the strength of the wire is secured. The For this reason, it becomes possible to suitably prevent the wire from being broken before the wire is pulled in the wire breaking step, and it is possible to sufficiently secure the length of the wire necessary for forming the ball on the capillary side. This makes it possible to form a stable bump with a high bondability to a bump formation target in a more reliable manner.
請求項４に記載の発明は、前記バンプ形成対象は、前記第１接続端子又は前記第２接続端子を含むことをその要旨とする。
本発明によれば、接合性が高く安定したバンプを接続対象としての第１接続端子又は第２接続端子に形成することにより、生産性を低下させることなく、ワイヤと第１接続端子又は第２接続端子との接続部分の電気的信頼性や機械的強度を向上させることができる。
The gist of the invention described in claim 4 is that the bump formation target includes the first connection terminal or the second connection terminal.
According to the present invention, by forming a highly-bondable and stable bump on the first connection terminal or the second connection terminal as a connection target, the wire and the first connection terminal or the second connection can be performed without reducing productivity. The electrical reliability and mechanical strength of the connection portion with the connection terminal can be improved.
本発明によれば、接合性が高く安定したバンプを形成することが可能なバンプ形成方法を提供することができる。 According to the present invention, it is possible to provide a bump forming method capable of forming a highly stable and stable bump.
以下、本発明を具体化した一実施の形態を図面に従って説明する。
図１（ａ）に示すように、ワイヤボンディング装置１のキャピラリ２は、先端側（図１（ａ）中、下側）に向かって次第に細くなる略円錐台状に形成されている。キャピラリ２は、駆動装置（図示略）に駆動されて３次元方向へ移動する。図１（ｂ）に示すように、キャピラリ２は、その先端側と基端側とに開口する挿通孔２ａを備えている。キャピラリ２の先端面２ｂは、外側に向かうほどキャピラリ２の基端側に傾斜するテーパ面とされている。また、キャピラリの先端面２ｂにおける挿通孔２ａの周囲には、面取り部２ｃがすり鉢状に形成されている。図１（ａ）に示すように、挿通孔２ａには、ワイヤ３が挿通されている。ワイヤ３は、キャピラリ２の上方に設けられたワイヤスプール４から引き出されている。キャピラリ２とワイヤスプール４との間には、ワイヤ３をクランプ・アンクランプ可能なクランパ５が配設されている。クランパ５は、前記駆動装置に駆動されてキャピラリ２と共に移動する。
DESCRIPTION OF EXEMPLARY EMBODIMENTS Hereinafter, an embodiment of the invention will be described with reference to the drawings.
As shown in FIG. 1A, the capillary 2 of the wire bonding apparatus 1 is formed in a substantially truncated cone shape that gradually becomes thinner toward the tip side (the lower side in FIG. 1A). The capillary 2 is driven by a driving device (not shown) and moves in a three-dimensional direction. As shown in FIG. 1B, the capillary 2 includes an insertion hole 2a that opens to the distal end side and the proximal end side. The distal end surface 2b of the capillary 2 is a tapered surface that inclines toward the proximal end side of the capillary 2 toward the outside. Further, a chamfered portion 2c is formed in a mortar shape around the insertion hole 2a in the distal end surface 2b of the capillary. As shown in FIG. 1A, the wire 3 is inserted through the insertion hole 2a. The wire 3 is drawn from a wire spool 4 provided above the capillary 2. A clamper 5 capable of clamping and unclamping the wire 3 is disposed between the capillary 2 and the wire spool 4. The clamper 5 is driven by the driving device and moves together with the capillary 2.
また、ワイヤボンディング装置１は、キャピラリ２の先端から突出するワイヤ３との間で放電を行うための手段として電気トーチ６を備えている。電気トーチ６は、退避位置からキャピラリ２の先端面２ｂにおける挿通孔２ａの近傍へ移動しうるように構成されている。また、ワイヤボンディング装置１は、キャピラリ２に超音波振動を与えるための振動付与手段（図示略）及びワイヤ３のテンションを一定に保つためのエアーテンション（図示略）を備えている。 Further, the wire bonding apparatus 1 includes an electric torch 6 as a means for performing discharge with the wire 3 protruding from the tip of the capillary 2. The electric torch 6 is configured to be able to move from the retracted position to the vicinity of the insertion hole 2a in the distal end surface 2b of the capillary 2. The wire bonding apparatus 1 also includes vibration applying means (not shown) for applying ultrasonic vibration to the capillary 2 and air tension (not shown) for keeping the tension of the wire 3 constant.
また、ワイヤボンディング装置１は、接続対象としての半導体素子７の第１接続端子８が配置されるファーストボンド位置Ｐ１、及び、半導体素子７が搭載される接続対象としての基板９の第２接続端子１０が配置されるセカンドボンド位置Ｐ２、並びに、前記振動付与手段の出力等を設定するための入力装置（図示略）を備えている。なお、前記入力装置を通じて、基板９が載置されるステージを加熱するヒータ（図示略）の出力も設定できるようになっている。半導体素子７には、複数の第１接続端子８が設けられており、基板９には、複数の第１接続端子８に対応する複数の第２接続端子１０が設けられている。ワイヤボンディング装置１は、入力装置を通じて予め設定されたファーストボンド位置Ｐ１にある第１接続端子８及びセカンドボンド位置Ｐ２にある第２接続端子１０にワイヤ３を押圧し溶着させることで、第１接続端子８と第２接続端子１０とを電気的に接続する（図６参照）。 Further, the wire bonding apparatus 1 includes a first bond position P1 where the first connection terminal 8 of the semiconductor element 7 as a connection target is disposed, and a second connection terminal of the substrate 9 as a connection target on which the semiconductor element 7 is mounted. And an input device (not shown) for setting the second bond position P2 where 10 is disposed, the output of the vibration applying means, and the like. The output of a heater (not shown) for heating the stage on which the substrate 9 is placed can be set through the input device. The semiconductor element 7 is provided with a plurality of first connection terminals 8, and the substrate 9 is provided with a plurality of second connection terminals 10 corresponding to the plurality of first connection terminals 8. The wire bonding apparatus 1 presses and welds the wire 3 to the first connection terminal 8 at the first bond position P1 and the second connection terminal 10 at the second bond position P2 which are set in advance through the input device. The terminal 8 and the second connection terminal 10 are electrically connected (see FIG. 6).
次に、第１接続端子８及び第２接続端子１０をワイヤ３にて接続する場合のワイヤボンディング装置１の動作（ワイヤボンディングサイクル）を説明する。
まず、ワイヤボンディング装置１は、図１（ａ）に２点鎖線で示されるように、キャピラリ２の先端側に電気トーチ６を移動させ、挿通孔２ａからキャピラリ２の先端側に突出したワイヤ３と電気トーチ６との間で高圧放電させ、該ワイヤ３の先端部を溶融させてボール１１を形成する。そして、図２に示すように、ワイヤボンディング装置１は、前記駆動装置の駆動によりキャピラリ２をファーストボンド位置Ｐ１の直上に移動させる。これにより、キャピラリ２の中心が、半導体素子７の第１接続端子８上に配置される。次に、ワイヤボンディング装置１は、前記駆動装置の駆動によりキャピラリ２を下方へ移動させ、ボール１１を第１接続端子８に押圧する。このとき、ワイヤボンディング装置１は、前記振動付与手段によって押圧状態のボール１１に超音波を加える（ファーストボンド工程）。これにより、ボール１１が、第１接続端子８に接合される。
Next, the operation (wire bonding cycle) of the wire bonding apparatus 1 when the first connection terminal 8 and the second connection terminal 10 are connected by the wire 3 will be described.
First, as shown by a two-dot chain line in FIG. 1A, the wire bonding apparatus 1 moves the electric torch 6 to the distal end side of the capillary 2 and protrudes from the insertion hole 2a to the distal end side of the capillary 2. And the electric torch 6 are subjected to high-pressure discharge, and the tip of the wire 3 is melted to form the ball 11. Then, as shown in FIG. 2, the wire bonding apparatus 1 moves the capillary 2 directly above the first bond position P1 by driving the driving apparatus. As a result, the center of the capillary 2 is disposed on the first connection terminal 8 of the semiconductor element 7. Next, the wire bonding apparatus 1 moves the capillary 2 downward by driving the driving apparatus and presses the ball 11 against the first connection terminal 8. At this time, the wire bonding apparatus 1 applies an ultrasonic wave to the pressed ball 11 by the vibration applying means (first bonding step). Thereby, the ball 11 is joined to the first connection terminal 8.
次に、図３に示すように、ワイヤボンディング装置１は、クランパ５を開いたアンクランプ状態で、前記駆動装置の駆動を通じてキャピラリ２を上方へ移動させた後、図４に示すように、同キャピラリ２をセカンドボンド位置Ｐ２の直上に移動させる。これにより、キャピラリ２の中心が、第２接続端子１０上に配置される。なお、このとき、ワイヤボンディング装置１は、ワイヤ３のループ形状を最適な状態にするべく、前記エアーテンションでワイヤ３のテンションを一定に保ちながらキャピラリ２を特殊な軌道で移動させ、ワイヤ３に屈曲部（くせ）３ａを形成するループ動作を行う。 Next, as shown in FIG. 3, the wire bonding apparatus 1 moves the capillary 2 upward through driving of the driving device in the unclamped state where the clamper 5 is opened, and then, as shown in FIG. The capillary 2 is moved immediately above the second bond position P2. As a result, the center of the capillary 2 is arranged on the second connection terminal 10. At this time, the wire bonding apparatus 1 moves the capillary 2 in a special orbit while keeping the tension of the wire 3 constant with the air tension so that the loop shape of the wire 3 is optimized. A loop operation for forming the bent portion (skin) 3a is performed.
そして、図５（ａ）に示すように、ワイヤボンディング装置１は、前記駆動装置の駆動によりキャピラリ２を下方へ移動させ、ワイヤ３を第２接続端子１０に押圧する。このとき、ワイヤボンディング装置１は、前記振動付与手段によって押圧状態のワイヤ３に超音波を加える（セカンドボンド工程）。これにより、図５（ｂ）に示すように、ワイヤ３に、キャピラリ２の先端面２ｂで押圧されることで第２接続端子１０に接合される部分であるステッチボンドＢ１と、キャピラリ２の面取り部２ｃで押圧されることで第２接続端子１０に（暫定的に）接合される部分であるテイルボンドＢ２とが形成される。 Then, as shown in FIG. 5A, the wire bonding apparatus 1 moves the capillary 2 downward by driving the driving apparatus and presses the wire 3 against the second connection terminal 10. At this time, the wire bonding apparatus 1 applies ultrasonic waves to the pressed wire 3 by the vibration applying means (second bonding step). Accordingly, as shown in FIG. 5B, the stitch bond B <b> 1 that is a portion joined to the second connection terminal 10 by being pressed against the wire 3 by the tip surface 2 b of the capillary 2, and the chamfering of the capillary 2. By being pressed by the portion 2c, a tail bond B2 which is a portion to be (temporarily) joined to the second connection terminal 10 is formed.
次に、図６に示すように、ワイヤボンディング装置１は、クランパ５を開いたアンクランプ状態でキャピラリ２を上方へ移動させ、キャピラリ２の先端側に一定の長さのワイヤ３を突出させた後、クランパ５を閉じたクランプ状態でキャピラリ２をさらに上方へ移動させる（ワイヤ破断工程）。ワイヤ３は上方へ引っ張られることにより、テイルボンドＢ２の部分で破断し、ステッチボンドＢ１から切り離される。以上で、第１接続端子８と第２接続端子１０とをワイヤ３にて電気的に接続する１回のワイヤボンディングサイクルが終了する。ワイヤボンディング装置１は、ワイヤ破断工程においてワイヤ３を破断した後にキャピラリ２の先端側に残ったワイヤ（テイル）３と電気トーチ６との間で高圧放電させ、該ワイヤ３を溶融させて、次のワイヤボンディングサイクルの為のボール１１を形成する。ワイヤボンディング装置１は、次の第１接続端子８及び第２接続端子１０に対するワイヤボンディングサイクルを連続して実行する。 Next, as shown in FIG. 6, the wire bonding apparatus 1 moves the capillary 2 upward in an unclamped state in which the clamper 5 is opened, and causes the wire 3 having a certain length to protrude from the tip side of the capillary 2. Thereafter, the capillary 2 is further moved upward with the clamper 5 closed (wire breaking step). When the wire 3 is pulled upward, the wire 3 is broken at the tail bond B2 and separated from the stitch bond B1. Thus, one wire bonding cycle for electrically connecting the first connection terminal 8 and the second connection terminal 10 with the wire 3 is completed. The wire bonding apparatus 1 performs high-pressure discharge between the wire (tail) 3 remaining on the tip side of the capillary 2 and the electric torch 6 after breaking the wire 3 in the wire breaking step, and melts the wire 3 Balls 11 for the wire bonding cycle are formed. The wire bonding apparatus 1 continuously executes wire bonding cycles for the next first connection terminal 8 and second connection terminal 10.
また、本実施の形態では、ワイヤ３と第２接続端子１０との接続部分の電気的信頼性や機械的強度を向上させるべく、上述したワイヤボンディングに先立ち、第２接続端子１０上にバンプを形成する。次に、このワイヤボンディング装置１によるバンプ形成方法（バンプ形成サイクル）について説明する。 In the present embodiment, bumps are formed on the second connection terminals 10 prior to the above-described wire bonding in order to improve the electrical reliability and mechanical strength of the connection portions between the wires 3 and the second connection terminals 10. Form. Next, a bump forming method (bump forming cycle) by the wire bonding apparatus 1 will be described.
＜バンプ形成方法＞
このバンプ形成方法においては、前記入力装置を通じて、セカンドボンド工程におけるセカンドボンド位置Ｐ２を、ファーストボンド工程におけるファーストボンド位置Ｐ１から、ボール１１の径方向に挿通孔２ａの面取り部２ｃの先端側の半径Ｒよりも大きな距離Ｒ１ずらした位置に設定する（図７参照）。
<Bump formation method>
In this bump forming method, the second bond position P2 in the second bond process is changed from the first bond position P1 in the first bond process to the tip side of the chamfered portion 2c of the insertion hole 2a in the radial direction of the ball 11 through the input device. A position shifted by a distance R1 larger than R is set (see FIG. 7).
図１（ａ）に示すように、ワイヤボンディング装置１は、第２接続端子１０にバンプを形成する場合、まず、前記ワイヤボンディングサイクルと同様に、キャピラリ２の先端側に電気トーチ６を移動させ、挿通孔２ａからキャピラリ２の先端側に突出したワイヤ３と電気トーチ６との間で高圧放電させ、該ワイヤ３の先端部を溶融させてボール１１を形成する。そして、図２に示すように、ワイヤボンディング装置１は、前記駆動装置の駆動によりキャピラリ２をファーストボンド位置Ｐ１の直上に移動させる。これにより、キャピラリ２の中心が、図２において括弧書きで示すバンプ形成対象である第２接続端子１０上に配置される。次に、ワイヤボンディング装置１は、前記駆動装置の駆動によりキャピラリ２を下方へ移動させ、ボール１１を第２接続端子１０に押圧する。このとき、ワイヤボンディング装置１は、前記振動付与手段によって押圧状態のボール１１に超音波を加える（ファーストボンド工程）。これにより、ボール１１が、第２接続端子１０に接合される。 As shown in FIG. 1A, when forming a bump on the second connection terminal 10, the wire bonding apparatus 1 first moves the electric torch 6 to the tip side of the capillary 2 as in the wire bonding cycle. Then, a high-pressure discharge is performed between the wire 3 protruding from the insertion hole 2a toward the tip of the capillary 2 and the electric torch 6, and the tip of the wire 3 is melted to form the ball 11. Then, as shown in FIG. 2, the wire bonding apparatus 1 moves the capillary 2 directly above the first bond position P1 by driving the driving apparatus. As a result, the center of the capillary 2 is arranged on the second connection terminal 10 which is a bump formation target indicated by parentheses in FIG. Next, the wire bonding apparatus 1 moves the capillary 2 downward by driving the driving apparatus, and presses the ball 11 against the second connection terminal 10. At this time, the wire bonding apparatus 1 applies an ultrasonic wave to the pressed ball 11 by the vibration applying means (first bonding step). Thereby, the ball 11 is joined to the second connection terminal 10.
次に、図３に示すように、ワイヤボンディング装置１は、クランパ５を開いたアンクランプ状態で、前記駆動装置の駆動を通じてキャピラリ２を上方へ移動させた後、図７に示すように、同キャピラリ２を、セカンドボンド位置Ｐ２の直上に移動させる。これにより、キャピラリ２の中心が、ボール１１の径方向にキャピラリ２の挿通孔２ａの半径Ｒよりも大きい距離Ｒ１ずれた位置に配置される。なお、このとき、ワイヤボンディング装置１は、キャピラリ２を特殊な軌道で移動させるループ動作を行うが、例えば、ワイヤ３に前記屈曲部３ａが形成されないよう、また、前記エアーテンションによりワイヤ３がキャピラリ２の挿通孔２ａ内に適切に引き込まれるよう、ループ動作の条件を設定して、バンプの形状に影響がないようにする。 Next, as shown in FIG. 3, the wire bonding apparatus 1 moves the capillary 2 upward through driving of the driving device in the unclamped state where the clamper 5 is opened, and then, as shown in FIG. The capillary 2 is moved immediately above the second bond position P2. Thereby, the center of the capillary 2 is arranged at a position shifted in the radial direction of the ball 11 by a distance R1 larger than the radius R of the insertion hole 2a of the capillary 2. At this time, the wire bonding apparatus 1 performs a loop operation for moving the capillary 2 along a special trajectory. For example, the wire 3 is connected to the capillary by the air tension so that the bent portion 3a is not formed. The conditions of the loop operation are set so as to be properly drawn into the second insertion hole 2a so that the shape of the bump is not affected.
そして、図８（ａ）に示すように、ワイヤボンディング装置１は、前記駆動装置の駆動によりキャピラリ２を下方へ移動させ、ワイヤ３を第２接続端子１０に押圧する。このとき、ワイヤボンディング装置１は、前記振動付与手段によって押圧状態のワイヤ３に超音波を加える（セカンドボンド工程）。これにより、図８（ｂ）に示すように、ボール１１の直上のワイヤ３がキャピラリ２の先端面２ｂで押圧されて溶着される（一体となる）とともに、ワイヤ３においてキャピラリ２の先端面２ｂで押圧された部分の肉厚が薄くなりテイルボンドＢ２が形成される。このとき、ファーストボンド工程で溶着したボール１１が、セカンドボンド工程で再度押圧されて溶着する。このため、バンプ１２の第２接続端子１０に対する接合性が向上する。また、キャピラリ２の先端面２ｂは、外側に向かうほど基端側に傾斜するため、ボール１１の直上のワイヤ３を押圧して溶着させる際に溶融したボール１１若しくはワイヤ３は、キャピラリ２の外側であってボール１１の中心側へ押圧される。このため、溶融したボール１１若しくはワイヤ３がバンプ１２の中心に集められ、バンプ１２の肉厚が確保されるので、後のワイヤボンディングサイクルにおけるバンプ１２とワイヤ３との接合性が向上する。 Then, as shown in FIG. 8A, the wire bonding apparatus 1 moves the capillary 2 downward by driving the driving apparatus and presses the wire 3 against the second connection terminal 10. At this time, the wire bonding apparatus 1 applies ultrasonic waves to the pressed wire 3 by the vibration applying means (second bonding step). As a result, as shown in FIG. 8B, the wire 3 immediately above the ball 11 is pressed and welded (integrated) by the distal end surface 2b of the capillary 2, and the distal end surface 2b of the capillary 2 in the wire 3 is welded. The thickness of the pressed portion is reduced and the tail bond B2 is formed. At this time, the ball 11 welded in the first bond process is pressed and welded again in the second bond process. For this reason, the bondability of the bump 12 to the second connection terminal 10 is improved. Further, since the distal end surface 2b of the capillary 2 is inclined toward the proximal end toward the outside, the ball 11 or the wire 3 melted when the wire 3 immediately above the ball 11 is welded by pressing is welded to the outside of the capillary 2. Thus, the ball 11 is pressed toward the center side. For this reason, the melted ball 11 or the wire 3 is collected at the center of the bump 12 and the thickness of the bump 12 is secured, so that the bondability between the bump 12 and the wire 3 in the subsequent wire bonding cycle is improved.
次に、図９（ａ）に示すように、ワイヤボンディング装置１は、クランパ５を開いたアンクランプ状態でキャピラリ２を上方へ移動させ、キャピラリ２の先端側に一定の長さのワイヤ３を突出させた後、クランパ５を閉じたクランプ状態でキャピラリ２をさらに上方へ移動させる（ワイヤ破断工程）。ワイヤ３は上方へ引っ張られることにより、ワイヤ３においてキャピラリ２の先端面２ｂで押圧されたテイルボンドＢ２の位置で破断し、ボール１１から切り離される。以上で、１回のバンプ形成サイクルが終了する。すなわち、図９（ｂ）に示されるように、ワイヤ３の破断位置が特定され、バンプ１２のひげの長さ及びバンプ１２の形状が安定するとともに、破断後にキャピラリ２側に残るワイヤ３の長さが安定する。また、セカンドボンド工程においてキャピラリ２の先端面２ｂに形成されたテーパ状の面取り部２ｃで押圧されることにより、該面取り部２ｃで押圧されてなるテイルボンドＢ２が肉厚となりワイヤ３の強度が確保される。このため、ワイヤ破断工程においてワイヤ３を引っ張る前にワイヤ３が破断してしまうことを好適に防止することが可能となり、キャピラリ２側に次のバンプ形成サイクルでボール１１を形成する際に必要なワイヤ３の長さを十分確保することができる。 Next, as shown in FIG. 9A, the wire bonding apparatus 1 moves the capillary 2 upward in an unclamped state in which the clamper 5 is opened, and puts a wire 3 of a certain length on the tip side of the capillary 2. After the protrusion, the capillary 2 is further moved upward with the clamper 5 closed (wire breaking step). When the wire 3 is pulled upward, the wire 3 is broken at the position of the tail bond B <b> 2 pressed by the tip end surface 2 b of the capillary 2 and is separated from the ball 11. Thus, one bump formation cycle is completed. That is, as shown in FIG. 9B, the break position of the wire 3 is specified, the whisker length of the bump 12 and the shape of the bump 12 are stabilized, and the length of the wire 3 remaining on the capillary 2 side after the break Is stable. Further, in the second bonding step, the tail bond B2 pressed by the chamfered portion 2c is thickened by being pressed by the tapered chamfered portion 2c formed on the tip surface 2b of the capillary 2, and the strength of the wire 3 is increased. Secured. For this reason, it becomes possible to suitably prevent the wire 3 from breaking before the wire 3 is pulled in the wire breaking step, which is necessary when the ball 11 is formed on the capillary 2 side in the next bump forming cycle. A sufficient length of the wire 3 can be secured.
ワイヤボンディング装置１は、ワイヤ３を破断した後にキャピラリ２の先端側に残ったワイヤ３と電気トーチ６との間で高圧放電させ、該ワイヤ３の先端部を溶融させて、第１接続端子８にワイヤを接合するためのボール１１を形成し、第１及び第２接続端子８，１０を接続するワイヤボンディングサイクルを連続して実行する。 The wire bonding apparatus 1 discharges the high pressure between the wire 3 remaining on the distal end side of the capillary 2 after breaking the wire 3 and the electric torch 6, melts the distal end portion of the wire 3, and the first connection terminal 8. A ball 11 for bonding wires is formed on the wire, and a wire bonding cycle for connecting the first and second connection terminals 8 and 10 is continuously executed.
次に、上記実施の形態の作用効果を以下に記載する。
（１）セカンドボンド工程におけるセカンドボンド位置Ｐ２（キャピラリ２の中心位置）を、ファーストボンド工程におけるファーストボンド位置Ｐ１（キャピラリ２の中心位置）からボール１１の径方向に挿通孔２ａの半径Ｒよりも大きい距離Ｒ１ずらした位置に設定した。このため、ボール１１の直上のワイヤ３がキャピラリ２の先端面２ｂで押圧されてボール１１に溶着されるとともに、ワイヤ３においてキャピラリ２の先端面２ｂで押圧された部分の肉厚が薄くなりテイルボンドＢ２が形成される。従って、ワイヤ破断工程において、ワイヤ３は、ワイヤ３においてキャピラリ２の先端面２ｂで押圧されたテイルボンドＢ２の位置で破断することとなり、ワイヤ３の破断位置を特定することができる。よって、破断後にバンプ１２に残るワイヤ（ひげ）の長さ及びバンプ１２の形状を安定させることができるとともに、破断後にキャピラリ２側に残るワイヤ（テイル）３の長さを安定させることができる。また、ファーストボンド工程で第２接続端子１０に溶着したボール１１を、セカンドボンド工程で再度押圧して溶着させるため、第２接続端子１０に対するバンプ１２の接合性を向上させることができる。よって、第２接続端子１０に対する接合性が高く安定したバンプ１２を形成することができる。その結果、生産性を向上させることができる。
Next, the operational effects of the above embodiment will be described below.
(1) The second bond position P2 (center position of the capillary 2) in the second bond process is set to be larger than the radius R of the insertion hole 2a in the radial direction of the ball 11 from the first bond position P1 (center position of the capillary 2) in the first bond process. The position was shifted by a large distance R1. For this reason, the wire 3 immediately above the ball 11 is pressed by the tip surface 2b of the capillary 2 and welded to the ball 11, and the thickness of the portion of the wire 3 pressed by the tip surface 2b of the capillary 2 is reduced. Bond B2 is formed. Therefore, in the wire breaking step, the wire 3 is broken at the position of the tail bond B2 pressed by the distal end surface 2b of the capillary 2 in the wire 3, and the breaking position of the wire 3 can be specified. Therefore, the length of the wire (whisker) remaining on the bump 12 after breaking and the shape of the bump 12 can be stabilized, and the length of the wire (tail) 3 remaining on the capillary 2 side after breaking can be stabilized. In addition, since the ball 11 welded to the second connection terminal 10 in the first bond process is pressed and welded again in the second bond process, the bondability of the bumps 12 to the second connection terminal 10 can be improved. Therefore, it is possible to form the bump 12 having a high bondability to the second connection terminal 10 and stable. As a result, productivity can be improved.
（２）また、ワイヤボンディング装置１によって第２接続端子１０に対する接合性が高く安定したバンプ１２を形成することができるため、同一の装置でバンプ形成サイクルとワイヤボンディングサイクルとを連続して実行することが可能となり、生産性をより向上させることができる。 (2) Further, since the wire bonding apparatus 1 can form a stable bump 12 having high bondability to the second connection terminal 10, the bump forming cycle and the wire bonding cycle are continuously executed by the same apparatus. And productivity can be further improved.
（３）キャピラリ２の先端面２ｂは外側に向かうほど基端側に傾斜するため、セカンドボンド工程において、ボール１１の直上のワイヤ３を押圧して溶着させる際に溶融したボール１１若しくはワイヤ３は、キャピラリ２の外側であってボール１１の中心側へ押圧される。このため、溶融したボール１１若しくはワイヤ３がバンプ１２の中心に集められ肉厚が確保されるので、バンプ１２とワイヤ３との接合性を向上させることができる。 (3) Since the distal end surface 2b of the capillary 2 is inclined toward the proximal end as it goes outward, in the second bonding step, the molten ball 11 or the wire 3 is pressed when the wire 3 immediately above the ball 11 is pressed and welded. The outer surface of the capillary 2 is pressed toward the center of the ball 11. For this reason, the melted ball 11 or the wire 3 is collected at the center of the bump 12 and the thickness is secured, so that the bondability between the bump 12 and the wire 3 can be improved.
（４）セカンドボンド工程ではキャピラリ２の先端面２ｂにおける挿通孔２ａの周囲に形成された面取り部２ｃで押圧されることにより、該面取り部２ｃで押圧されたテイルボンドＢ２が肉厚となりワイヤ３の強度が確保される。このため、ワイヤ破断工程においてワイヤ３を引っ張る前にワイヤ３が破断してしまうことを好適に防止することが可能となり、キャピラリ２側にボール１１を形成する際に必要なワイヤ３の長さを十分確保することができる。よって、第２接続端子１０に対する接合性が高く安定したバンプ１２をより確実に連続して形成することができる。 (4) In the second bonding step, the tail bond B2 pressed by the chamfered portion 2c is thickened by being pressed by the chamfered portion 2c formed around the insertion hole 2a in the distal end surface 2b of the capillary 2, and the wire 3 The strength of the is secured. For this reason, it becomes possible to suitably prevent the wire 3 from being broken before the wire 3 is pulled in the wire breaking step, and the length of the wire 3 necessary for forming the ball 11 on the capillary 2 side can be reduced. Enough can be secured. Therefore, the stable bump 12 having a high bondability to the second connection terminal 10 can be formed more reliably and continuously.
（５）接合性が高く安定したバンプ１２を接続対象としての第２接続端子１０に形成することにより、生産性を低下させることなく、ワイヤ３と第２接続端子１０との接続部分の電気的信頼性や機械的強度を向上させることができる。 (5) By forming the bump 12 having a high bondability and stability on the second connection terminal 10 as a connection target, the electrical connection portion of the wire 3 and the second connection terminal 10 is electrically connected without lowering the productivity. Reliability and mechanical strength can be improved.
尚、本実施の形態は、以下のように変更してもよい。
・上記実施の形態では、先端面２ｂが外側に向かうほど基端側に傾斜したキャピラリ２を用いたが、先端面２ｂが傾斜していないキャピラリを用いてもよい。
In addition, you may change this Embodiment as follows.
In the above embodiment, the capillary 2 that is inclined toward the proximal end as the distal end surface 2b is directed outward is used. However, a capillary that is not inclined at the distal end surface 2b may be used.
・上記実施の形態では、ワイヤボンディング装置１でバンプ１２を形成した後、ワイヤボンディングを行うようにしたが、ワイヤボンディングを行った後、第１接続端子８や第２接続端子１０にバンプを形成するようにしてもよい。また、上記実施の形態では、同一のワイヤボンディング装置１でバンプ１２の形成とワイヤボンディングとを行うようにしたが、別々の装置で行うようにしてもよい。 In the above embodiment, the wire bonding apparatus 1 forms the bumps 12 and then performs the wire bonding. However, after the wire bonding, the bumps are formed on the first connection terminals 8 and the second connection terminals 10. You may make it do. Moreover, in the said embodiment, although formation of the bump 12 and wire bonding were performed with the same wire bonding apparatus 1, you may make it perform with a separate apparatus.
・上記実施の形態では、基板９の第２接続端子１０にバンプ１２を形成したが、半導体素子７の第１接続端子８にバンプ１２を形成してもよい。
・上記実施の形態では、半導体素子７の第１接続端子８と基板９の第２接続端子１０とをワイヤ３にて接続したが、基板９等の同一の部材に設けられた複数の接続端子をワイヤにて接続してもよい。
In the above embodiment, the bumps 12 are formed on the second connection terminals 10 of the substrate 9, but the bumps 12 may be formed on the first connection terminals 8 of the semiconductor element 7.
In the above embodiment, the first connection terminal 8 of the semiconductor element 7 and the second connection terminal 10 of the substrate 9 are connected by the wire 3, but a plurality of connection terminals provided on the same member such as the substrate 9 May be connected by a wire.
・上記実施の形態では、セカンドボンド工程におけるセカンドボンド位置Ｐ２を、ファーストボンド工程におけるファーストボンド位置Ｐ１から、ボール１１の径方向に挿通孔２ａの面取り部２ｃの先端側の半径Ｒよりも大きな距離Ｒ１ずらしたが、ずらし量は挿通孔２ａの半径以上であれば適宜変更可能である。 In the above embodiment, the second bond position P2 in the second bond process is larger than the radius R on the tip side of the chamfered portion 2c of the insertion hole 2a in the radial direction of the ball 11 from the first bond position P1 in the first bond process. Although R1 is shifted, the shift amount can be appropriately changed as long as it is equal to or larger than the radius of the insertion hole 2a.
・上記実施の形態において、ワイヤボンディング装置１に、キャピラリ２を加熱するヒータを設け、ワイヤ３若しくはボール１１を接合する際に、前記振動付与手段及びヒータによってワイヤ３若しくはボール１１に直接、超音波及び熱を加えるようにしてもよい。 In the above embodiment, the wire bonding apparatus 1 is provided with a heater for heating the capillary 2, and when the wire 3 or the ball 11 is joined, the ultrasonic wave is directly applied to the wire 3 or the ball 11 by the vibration applying means and the heater. In addition, heat may be applied.
１…ワイヤボンディング装置、２…キャピラリ、２ａ…挿通孔、２ｂ…先端面、２ｃ…面取り部、３…ワイヤ、７…接続対象としての半導体素子、８…第１接続端子、９…接続対象としての基板、１０…バンプ形成対象としての第２接続端子、１１…ボール、１２…バンプ、Ｒ…挿通孔の半径、Ｐ１…ファーストボンド位置、Ｐ２…セカンドボンド位置。 DESCRIPTION OF SYMBOLS 1 ... Wire bonding apparatus, 2 ... Capillary, 2a ... Insertion hole, 2b ... Tip surface, 2c ... Chamfering part, 3 ... Wire, 7 ... Semiconductor element as connection object, 8 ... 1st connection terminal, 9 ... As connection object 10 ... second connection terminals as bump formation targets, 11 ... balls, 12 ... bumps, R ... radius of insertion hole, P1 ... first bond position, P2 ... second bond position.
Claims (4)
前記ファーストボンド位置を特定のバンプ形成対象のバンプ形成位置に設定し、前記キャピラリの先端側に突出した前記ワイヤを溶融させて形成したボールを該バンプ形成位置に押圧して接合するファーストボンド工程と、
前記セカンドボンド位置を前記ファーストボンド位置から前記ボールの径方向に前記挿通孔の半径以上ずらした位置に設定し、前記キャピラリの先端面で前記ボールの直上のワイヤを押圧し前記ボールに溶着させるセカンドボンド工程と、
前記ワイヤを引っ張って破断させるワイヤ破断工程と
を備えたことを特徴とするバンプ形成方法。 A wire inserted through an insertion hole that opens to the tip end side of the capillary is a first connection terminal at a first bond position set as a connection target in the capillary, and the connection target or the connection corresponding to the first connection terminal Wire bonding for electrically connecting the first connection terminal and the second connection terminal by sequentially pressing and welding to the second connection terminal at the second bond position set as another connection target different from the target A bump forming method for forming a bump by an apparatus,
A first bond step in which the first bond position is set as a bump formation position of a specific bump formation target, and a ball formed by melting the wire protruding to the tip side of the capillary is pressed and bonded to the bump formation position; ,
The second bond position is set to a position shifted from the first bond position in the radial direction of the ball by a radius equal to or greater than the radius of the insertion hole, and the wire immediately above the ball is pressed by the tip end surface of the capillary to be welded to the ball The bonding process;
A bump forming method comprising: a wire breaking step of pulling and breaking the wire.
前記キャピラリの先端面は、外側に向かうほど基端側に傾斜することを特徴とするバンプ形成方法。 The bump forming method according to claim 1,
A bump forming method, wherein a tip end face of the capillary is inclined toward a base end side toward an outer side.
前記キャピラリの先端面における前記挿通孔の周囲には、面取り部が形成されたことを特徴とするバンプ形成方法。 In the bump forming method according to claim 1 or 2,
A bump forming method, wherein a chamfered portion is formed around the insertion hole in the tip surface of the capillary.
前記バンプ形成対象は、前記第１接続端子又は前記第２接続端子を含むことを特徴とするバンプ形成方法。 In the bump formation method according to any one of claims 1 to 3,
The bump forming method includes the first connection terminal or the second connection terminal.
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| JP2007222681A JP2009054950A (en) | 2007-08-29 | 2007-08-29 | Bump forming method |
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| JP2007222681A JP2009054950A (en) | 2007-08-29 | 2007-08-29 | Bump forming method |
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| JP2009054950A true JP2009054950A (en) | 2009-03-12 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2007222681A Pending JP2009054950A (en) | 2007-08-29 | 2007-08-29 | Bump forming method |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2011222813A (en) * | 2010-04-12 | 2011-11-04 | Denso Corp | Wire bonding method |
| WO2022269772A1 (en) * | 2021-06-22 | 2022-12-29 | 株式会社新川 | Bump-forming device, bump-forming method, and bump-forming program |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH10335368A (en) * | 1997-05-30 | 1998-12-18 | Sanyo Electric Co Ltd | Wire-bonding structure and semiconductor device |
| JP2000106381A (en) * | 1998-09-28 | 2000-04-11 | Sanyo Electric Co Ltd | Manufacture of semiconductor device |
| JP2003243436A (en) * | 2002-02-19 | 2003-08-29 | Seiko Epson Corp | Bump forming method, bump attached semiconductor element and manufacturing method thereof, semiconductor device and manufacturing method thereof, substrate and electronic device |
| JP2004088005A (en) * | 2002-08-29 | 2004-03-18 | Rohm Co Ltd | Capillary for wire bonding and wire-bonding method using same |
-
2007
- 2007-08-29 JP JP2007222681A patent/JP2009054950A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH10335368A (en) * | 1997-05-30 | 1998-12-18 | Sanyo Electric Co Ltd | Wire-bonding structure and semiconductor device |
| JP2000106381A (en) * | 1998-09-28 | 2000-04-11 | Sanyo Electric Co Ltd | Manufacture of semiconductor device |
| JP2003243436A (en) * | 2002-02-19 | 2003-08-29 | Seiko Epson Corp | Bump forming method, bump attached semiconductor element and manufacturing method thereof, semiconductor device and manufacturing method thereof, substrate and electronic device |
| JP2004088005A (en) * | 2002-08-29 | 2004-03-18 | Rohm Co Ltd | Capillary for wire bonding and wire-bonding method using same |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2011222813A (en) * | 2010-04-12 | 2011-11-04 | Denso Corp | Wire bonding method |
| WO2022269772A1 (en) * | 2021-06-22 | 2022-12-29 | 株式会社新川 | Bump-forming device, bump-forming method, and bump-forming program |
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