JPH04334035A - Soldering wire and formation of soldering bump using the wire - Google Patents
Soldering wire and formation of soldering bump using the wireInfo
- Publication number
- JPH04334035A JPH04334035A JP3105303A JP10530391A JPH04334035A JP H04334035 A JPH04334035 A JP H04334035A JP 3105303 A JP3105303 A JP 3105303A JP 10530391 A JP10530391 A JP 10530391A JP H04334035 A JPH04334035 A JP H04334035A
- Authority
- JP
- Japan
- Prior art keywords
- wire
- solder
- soldering
- ball
- bump
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 230000015572 biosynthetic process Effects 0.000 title abstract description 6
- 238000005476 soldering Methods 0.000 title abstract 11
- 229910000679 solder Inorganic materials 0.000 claims abstract description 87
- 238000002844 melting Methods 0.000 claims abstract description 13
- 230000008018 melting Effects 0.000 claims abstract description 13
- 238000000034 method Methods 0.000 claims abstract description 12
- 229910052751 metal Inorganic materials 0.000 claims abstract description 5
- 239000002184 metal Substances 0.000 claims abstract description 5
- 238000007493 shaping process Methods 0.000 claims abstract description 3
- 230000000881 depressing effect Effects 0.000 abstract 1
- 238000001125 extrusion Methods 0.000 abstract 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 7
- 229910052802 copper Inorganic materials 0.000 description 3
- 239000010949 copper Substances 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 238000007747 plating Methods 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000009713 electroplating Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000012808 vapor phase Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/10—Bump connectors ; Manufacturing methods related thereto
- H01L24/11—Manufacturing methods
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/11—Manufacturing methods
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/30—Assembling printed circuits with electric components, e.g. with resistor
- H05K3/32—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits
- H05K3/34—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by soldering
- H05K3/3457—Solder materials or compositions; Methods of application thereof
- H05K3/3478—Applying solder preforms; Transferring prefabricated solder patterns
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Wire Bonding (AREA)
- Lead Frames For Integrated Circuits (AREA)
Abstract
Description
【０００１】0001
【産業上の利用分野】本発明は半田バンプを形成するた
めのワイヤと、そのワイヤを使用した半田バンプの形成
方法に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a wire for forming solder bumps and a method of forming solder bumps using the wire.
【０００２】0002
【従来の技術】従来、半導体チップや回路基板等のパッ
ドに半田バンプを形成する方法として、半田めっき，半
田ボールの接合，ワイヤボンダーを利用する等の方式が
ある。ワイヤボンダーを利用し半田ワイヤよりバンプを
連続的に形成する方式は、半田ワイヤの先端に半田ボー
ルを形成し、その半田ボールをパッドに押圧して接合し
、半田ワイヤを引き上げて半田ワイヤと半田ボールとの
接続部で切断させる。しかるのち、パッドに接合させた
ことで変形した半田ボールを整形せしめ、半田バンプの
形成が完了する。2. Description of the Related Art Conventionally, methods for forming solder bumps on pads of semiconductor chips, circuit boards, etc. include methods such as solder plating, solder ball bonding, and the use of a wire bonder. The method of continuously forming bumps from solder wire using a wire bonder is to form a solder ball at the tip of the solder wire, press the solder ball against the pad to bond it, and then pull up the solder wire and bond it to the solder wire. Cut it at the connection with the ball. Thereafter, the solder ball, which has been deformed by being bonded to the pad, is reshaped and the formation of the solder bump is completed.
【０００３】半田バンプの形成に使用する従来の半田ワ
イヤは半田成分のみにてなる。そして、半田バンプの形
成に使用するワイヤボンダーの操作は、金ワイヤのボン
ディングとほぼ同じ条件であり、工程の簡易性， 生産
性， 確実性において、半田めっき方式および半田ボー
ルの接合方式より優れる。Conventional solder wire used to form solder bumps consists only of a solder component. The operation of the wire bonder used to form solder bumps is almost the same as for gold wire bonding, and is superior to solder plating and solder ball bonding methods in terms of process simplicity, productivity, and reliability.
【０００４】0004
【発明が解決しようとする課題】半田バンプに対し、最
近は低融点（例えば １８０℃以下） 化に対する要望
が高まるようになった。そこで、例えば３０μｍ ×３
０μｍ の面積であるパッドに適量の半田バンプを形成
するには、直径５０μｍ 程度以下の低融点半田ワイヤ
が必要になる。しかし、低融点半田はその機械的強度が
不足し切れ易いため、直径５０μｍ のワイヤにするこ
とが困難であった。[Problem to be Solved by the Invention] Recently, there has been an increasing demand for solder bumps to have a low melting point (for example, 180° C. or lower). Therefore, for example, 30 μm × 3
In order to form an appropriate amount of solder bumps on a pad with an area of 0 μm, a low melting point solder wire with a diameter of about 50 μm or less is required. However, since low melting point solder lacks mechanical strength and easily breaks, it has been difficult to make wires with a diameter of 50 μm.
【０００５】[0005]
【課題を解決するための手段】本発明による半田ワイヤ
は、ボンディングワイヤとして使用される金属の心線２
に半田３を被覆させたことを特徴とする。そして、本発
明による半田バンプの形成方法は、ワイヤ１の先端を溶
融させてワイヤ１に接続する半田ボール６を形成し、半
田ボール６をパッド９に押圧して接合せしめ、半田ボー
ル６とワイヤ１との接続部を切断したのち、該押圧によ
り変形した半田ボール６を加熱・溶融時の表面張力を利
用しほぼ球状に整形することを特徴とする。[Means for Solving the Problems] A solder wire according to the present invention is a metal core wire 2 used as a bonding wire.
It is characterized in that it is coated with solder 3. The method for forming a solder bump according to the present invention involves melting the tip of the wire 1 to form a solder ball 6 to be connected to the wire 1, pressing the solder ball 6 against a pad 9 to join it, and bonding the solder ball 6 with the wire. 1, the solder ball 6 deformed by the pressure is shaped into a substantially spherical shape using surface tension during heating and melting.
【０００６】[0006]
【作用】上記手段によれば、バンプ形成用半田ワイヤを
心線入りとしたことによって、低融点半田を使用し５０
μｍ 以下の細い半田ワイヤが形成可能となる。そのよ
うな半田ワイヤは、ワイヤボンディング装置を使用する
方式、即ち半田ボールの形成，半田ボールの接合，半田
ワイヤと半田ボールとの接続部の切断，接合半田ボール
の整形によって、半田バンプの形成を可能にする。[Operation] According to the above means, since the solder wire for bump formation is made of a core wire, a low melting point solder is used.
It becomes possible to form solder wires as thin as μm or less. Such solder wires can be used to form solder bumps by using a wire bonding device, that is, by forming solder balls, bonding the solder balls, cutting the connection between the solder wire and the solder balls, and shaping the bonded solder balls. enable.
【０００７】[0007]
【実施例】図１は本発明の実施例による半田ワイヤの構
成を示す拡大図（イ）と、その半田ワイヤを使用した半
田バンプ形成工程の説明図（ロ） 〜（ホ） である。DESCRIPTION OF THE PREFERRED EMBODIMENTS FIG. 1 is an enlarged view (a) showing the structure of a solder wire according to an example of the present invention, and explanatory views (b) to (e) of a solder bump forming process using the solder wire.
【０００８】図１（イ） において、半田ワイヤ１はボ
ンディングワイヤとして使用される金属、例えば銅（ま
たはアルミニウム）の心線２に低融点半田３を被覆した
ものである。銅の心線２は例えば直径が１５μｍ であ
り、直径が例えば５０μｍ である被覆半田３は、銅心
線２に電気めっきで形成したり、心線２より太い銅線に
被覆半田３より肉厚の半田を被覆したのち、ダイスを通
す線引き加工する等によって製造される。In FIG. 1A, a solder wire 1 is a core wire 2 of a metal used as a bonding wire, such as copper (or aluminum), coated with a low melting point solder 3. The copper core wire 2 has a diameter of, for example, 15 μm, and the coated solder 3 having a diameter of, for example, 50 μm may be formed on the copper core wire 2 by electroplating, or coated with a thicker coated solder 3 on a copper wire that is thicker than the core wire 2. After coating with solder, it is manufactured by drawing a wire through a die.
【０００９】図１（ロ） において、ワイヤボンダーの
キャピラリ４を貫通する半田ワイヤ１の先端をトーチ５
で加熱して溶かし、半田ワイヤ１の先端に接続する半田
ボール６を形成させる。その際、銅心線２の先端も溶か
され、半田ボール６内に銅ボール７が形成される。In FIG. 1(b), the tip of the solder wire 1 passing through the capillary 4 of the wire bonder is touched with a torch 5.
The solder ball 6 is heated and melted to form a solder ball 6 to be connected to the tip of the solder wire 1. At this time, the tip of the copper core wire 2 is also melted, and a copper ball 7 is formed inside the solder ball 6.
【００１０】次いで、図１（ハ） に示す如くキャピラ
リ４にて半田ボール６を基板８のパッド９に押圧すると
、半田ボール６は押し潰されてパッド９に接合する。そ
こで、ワイヤボンダーのクランパ１０で半田ワイヤ１を
クランプし、キャピラリ４と共にクランパ１０を引き上
げると図１（ニ） に示す如く、半田ワイヤ１は半田ボ
ール６との接続部で切断される。Next, as shown in FIG. 1C, when the solder ball 6 is pressed against the pad 9 of the substrate 8 by the capillary 4, the solder ball 6 is crushed and joined to the pad 9. Therefore, when the solder wire 1 is clamped by the clamper 10 of the wire bonder and the clamper 10 is pulled up together with the capillary 4, the solder wire 1 is cut at the connection part with the solder ball 6, as shown in FIG. 1(d).
【００１１】以下、同様に半田ボール６の形成，半田ボ
ール６の接合，半田ボール６の切断を繰り返して、同一
基板８に形成した複数のパッド９に半田ボール６を接合
せしめる。Thereafter, the formation of the solder balls 6, the joining of the solder balls 6, and the cutting of the solder balls 6 are repeated in the same manner to join the solder balls 6 to a plurality of pads 9 formed on the same substrate 8.
【００１２】次いで、基板８をベーパーフェーズ装置ま
たは窒素リフロー装置等に挿入し、押し潰された半田ボ
ール６を適当な温度で加熱し溶融させると、溶けた半田
ボール６はその表面張力によってほぼ球形となり、例え
ば３０μｍ×３０μｍ の金パッド９の上面には図１（
ホ） に示す如く、銅ボール７を収容し直径が約 １０
０μｍ の球形バンプ１１が形成されるようになる。Next, the substrate 8 is inserted into a vapor phase device, a nitrogen reflow device, etc., and the crushed solder balls 6 are heated and melted at an appropriate temperature, and the melted solder balls 6 are shaped into an almost spherical shape due to their surface tension. For example, the top surface of the gold pad 9 of 30 μm x 30 μm is shown in FIG.
e) As shown in Fig. 2, the copper ball 7 is accommodated and the diameter is approximately 10 mm.
A spherical bump 11 of 0 μm is now formed.
【００１３】[0013]
【発明の効果】以上説明したように本発明によれば、ボ
ンディングワイヤとして使用される金属心線を使用し、
その心線に低融点半田を被覆せしめたことによって、５
０μｍ 以下の細い低融点半田ワイヤが形成可能となる
。そして、そのような半田ワイヤはワイヤボンディング
装置を使用する方式の適用によって、低融点半田バンプ
が形成可能となり、低融点半田バンプに対する要望に応
じ得た効果がある。[Effects of the Invention] As explained above, according to the present invention, a metal core wire used as a bonding wire is used,
By coating the core wire with low melting point solder, 5
It becomes possible to form a thin low melting point solder wire of 0 μm or less. By applying such a solder wire to a method using a wire bonding device, it is possible to form a low melting point solder bump, which is effective in meeting the demand for low melting point solder bumps.
【図１】 本発明の実施例による半田ワイヤとそのワ
イヤを使用した半田バンプの形成例の主要工程の説明図
である。FIG. 1 is an explanatory diagram of a solder wire according to an embodiment of the present invention and main steps of an example of forming a solder bump using the wire.
１は半田ワイヤ ２は半田より硬質の心線 ３は心線に被覆させた半田 ６は半田ボール ９は半田バンプを形成せしめるパッド １１は半田バンプ 1 is solder wire 2 is a core wire that is harder than solder 3 is solder coated on the core wire 6 is solder ball 9 is a pad for forming solder bumps 11 is solder bump
Claims (2)
金属の心線（２） に半田（３） を被覆させたことを
特徴とする半田ワイヤ。1. A solder wire characterized in that a metal core wire (2) used as a bonding wire is coated with solder (3).
を溶融させて該ワイヤ（１）に接続する半田ボール（６
） を形成し、該半田ボール（６）を基板上のパッド（
９） に押圧して該パッド（９） に接合せしめ、該ワ
イヤ（１） を引き上げて該半田ボール（６） と該ワ
イヤ（１） との接続部を切断したのち、該押圧により
変形した該半田ボール（６） を加熱・溶融せしめた時
の表面張力を利用しほぼ球状に整形することを特徴とし
た半田バンプの形成方法。2. A solder ball (6) which is connected to the wire (1) by melting the tip of the wire (1) according to claim 1.
) and attach the solder ball (6) to the pad (
9) to bond it to the pad (9), pull up the wire (1) and cut the connection between the solder ball (6) and the wire (1), and then remove the wire that has been deformed by the pressure. A method for forming solder bumps, which is characterized by shaping a solder ball (6) into an almost spherical shape by utilizing surface tension when heated and melted.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3105303A JPH04334035A (en) | 1991-05-10 | 1991-05-10 | Soldering wire and formation of soldering bump using the wire |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3105303A JPH04334035A (en) | 1991-05-10 | 1991-05-10 | Soldering wire and formation of soldering bump using the wire |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH04334035A true JPH04334035A (en) | 1992-11-20 |
Family
ID=14403934
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP3105303A Withdrawn JPH04334035A (en) | 1991-05-10 | 1991-05-10 | Soldering wire and formation of soldering bump using the wire |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH04334035A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6455785B1 (en) | 1998-10-28 | 2002-09-24 | International Business Machines Corporation | Bump connection with stacked metal balls |
| JP2013232676A (en) * | 2006-09-22 | 2013-11-14 | Stats Chippac Inc | System and method of fusible input/output interconnection for flip-chip packaging, which use stud bumps attached to substrate |
| US9847309B2 (en) | 2006-09-22 | 2017-12-19 | STATS ChipPAC Pte. Ltd. | Semiconductor device and method of forming vertical interconnect structure between semiconductor die and substrate |
-
1991
- 1991-05-10 JP JP3105303A patent/JPH04334035A/en not_active Withdrawn
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6455785B1 (en) | 1998-10-28 | 2002-09-24 | International Business Machines Corporation | Bump connection with stacked metal balls |
| US7021521B2 (en) | 1998-10-28 | 2006-04-04 | International Business Machines Corporation | Bump connection and method and apparatus for forming said connection |
| JP2013232676A (en) * | 2006-09-22 | 2013-11-14 | Stats Chippac Inc | System and method of fusible input/output interconnection for flip-chip packaging, which use stud bumps attached to substrate |
| US9847309B2 (en) | 2006-09-22 | 2017-12-19 | STATS ChipPAC Pte. Ltd. | Semiconductor device and method of forming vertical interconnect structure between semiconductor die and substrate |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A300 | Application deemed to be withdrawn because no request for examination was validly filed |
Free format text: JAPANESE INTERMEDIATE CODE: A300 Effective date: 19980806 |