JPS61117846A - Manufacture of bonding metallic projection - Google Patents
Manufacture of bonding metallic projectionInfo
- Publication number
- JPS61117846A JPS61117846A JP59238463A JP23846384A JPS61117846A JP S61117846 A JPS61117846 A JP S61117846A JP 59238463 A JP59238463 A JP 59238463A JP 23846384 A JP23846384 A JP 23846384A JP S61117846 A JPS61117846 A JP S61117846A
- Authority
- JP
- Japan
- Prior art keywords
- bonding
- wire
- metal wire
- electrode
- pressure
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/10—Bump connectors ; Manufacturing methods related thereto
- H01L24/11—Manufacturing methods
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/11—Manufacturing methods
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
- H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
- H01L2224/13001—Core members of the bump connector
- H01L2224/13099—Material
- H01L2224/131—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/13138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/13144—Gold [Au] as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45144—Gold (Au) as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01078—Platinum [Pt]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01079—Gold [Au]
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Wire Bonding (AREA)
Abstract
Description
【発明の詳細な説明】 〔発明の分野〕 この発明は接合用金属突起の製造方法に関する。[Detailed description of the invention] [Field of invention] The present invention relates to a method of manufacturing a metal protrusion for joining.
〔発明の技術的背景およびその問題点〕半導体ペレット
を印刷回路基板上にマウントした後半導体ペレットの電
極パッドと印刷回路基板の電極パッドとをワイヤボンデ
ィングにより接続することが行なわれている。このワイ
ヤボンディングは量産工程においてマウンタ１台に対し
てワイヤボンディング装置８含程度の割合で長時間を要
する工程となっており、ワイヤレスポンディンｆ （Ｄ
例、ｔばフェースボンディングなどの実用化が強く要
望されている。[Technical Background of the Invention and Problems Therewith] After mounting a semiconductor pellet on a printed circuit board, the electrode pads of the semiconductor pellet and the electrode pads of the printed circuit board are connected by wire bonding. This wire bonding is a process that requires a long time in the mass production process, as one mounter requires about 8 wire bonding devices, and wireless bonding f (D
For example, there is a strong demand for practical use of face bonding.
半導体素子を直接外部導体に接続するワイヤレスボンデ
ィング方法では、半導体の電極パッドあるいは外部導体
にバンプなどの突起を設けて接続することが多い。突起
を設ける方法には、金属を蒸着やめっきで盛シ上げる方
法や、はんだボールを溶融接合する方法などが公知であ
る。またワイ−？ Ｍ ７ ｆインク装置を用いて、ボ
ールボンディングを行なった後、金線を切断して突起を
設ける方法も知られている。あるいはまた、糸はんだを
供給し、その先端を溶融して、はんだ突起を設ける方法
も知られている。In a wireless bonding method in which a semiconductor element is directly connected to an external conductor, protrusions such as bumps are often provided on the electrode pads of the semiconductor or the external conductor for connection. Known methods for providing the protrusions include a method of depositing metal by vapor deposition or plating, and a method of melting and joining solder balls. Wai again? A method is also known in which protrusions are provided by cutting the gold wire after performing ball bonding using an M 7 f ink device. Alternatively, a method is known in which solder projections are provided by supplying a solder thread and melting the tip thereof.
しかしながら金属蒸着やめっき法で突起を設ける方法は
、ワイヤボンディングに用いる半導体チップや外部導体
の製造工程に加えて、蒸着やめっきの加工工程を加える
ために歩留シの低下なども含めて、比較的に高価なもの
となる。またはんだボールを溶融接合する方法や、糸は
んだを溶融接合する方法は、一般にワイヤボンディング
に用いる半導体の電極材料がアルミニウムであるために
。However, the method of providing protrusions using metal vapor deposition and plating methods requires a process of vapor deposition and plating in addition to the manufacturing process of the semiconductor chip and external conductor used for wire bonding, resulting in a reduction in yield. It becomes expensive. The methods of melting solder balls and melting wire solder are generally used for wire bonding because the semiconductor electrode material used in wire bonding is aluminum.
このアルミニウム電極上にはんだと接合しゃすい金属膜
を蒸着やめりきで形成するので、やはりコスト高なもの
となる。さらにまた、糸はんだで供給されるはんだを溶
融して突起を設ける方法は。Since a metal film that is bondable to solder is formed on the aluminum electrode by vapor deposition or plating, the cost is also high. Furthermore, there is a method for forming protrusions by melting solder supplied as thread solder.
溶融したはんだが流れ出さないようダムを電極周囲に加
工する必要がある。さらにまた、ワイヤボンディング後
金ボール上の金線を切断する方法では（例え：ｉ特開昭
５０−８７２７８号）、金が変形しやすいため金線を高
さをそろえてうまく切断することが難かしく、また切断
し死傷や線をきれいに成形することが困難で、相手材料
と接合する品質もばらつくなどの欠点がありた。It is necessary to create a dam around the electrode to prevent molten solder from flowing out. Furthermore, in the method of cutting the gold wire on the gold ball after wire bonding (for example, JP-A-50-87278), it is difficult to properly cut the gold wire with the same height because the gold easily deforms. It was difficult to cut and form lines neatly, and the quality of bonding with the mating material varied.
この発明は上記点に鑑みなされたもので、突起電極形成
後成形工程を設けなくとも直ちにフェースボンディング
が可能で、突起電極の製造容易な接合用金属突起の製造
方法を提供するものである。The present invention has been made in view of the above points, and provides a method for manufacturing metal protrusions for bonding, which allows face bonding to be performed immediately without a molding step after forming the protruding electrodes, and which facilitates the production of protruding electrodes.
この発明は、第１の回路部品とｇ２の回路部品とを接合
するための少なくとも一方の接合部上に接合用金属線を
上記接合部に対して斜方からワイヤ案内管によシ案内し
た状態でボンディングツールによシ加圧接合する工程と
、この工程中又は加圧接合後上記案内管による金属線の
案内方向と異なる方向に上記金属線を引張る工程とを設
けた接合用金属突起の製造方法を得るものである。This invention provides a state in which a metal wire for joining is guided by a wire guide tube on at least one joint portion for joining the first circuit component and the g2 circuit component from an angle with respect to the joint portion. manufacturing a metal protrusion for bonding, which includes a step of pressure bonding with a bonding tool; and a step of pulling the metal wire in a direction different from the direction in which the metal wire is guided by the guide tube during or after pressure bonding. This is how you get it.
次に本発明方法の実施例を図面を参照して説明する。 Next, embodiments of the method of the present invention will be described with reference to the drawings.
第１の回路部品例えば半導体素子として最も接合用電極
パッド数の多いＩＣ素子（１）の電極パッド（２）に接
合用金属突起を設ける場合の実施例である。This is an example in which bonding metal protrusions are provided on electrode pads (2) of a first circuit component, such as an IC element (1) that has the largest number of bonding electrode pads among semiconductor devices.
電極パッド（２）上に接合用金属線例えば、金ワイヤ（
３）の先端を載置する。この金ワイヤ（３）の案内手段
はワイヤ案内管例えばワイヤフィーダ（４）により電極
パッド（２）の面に対して斜方向例えば約３０度の方向
から案内する。そして金ワイヤ（３）の載置方向は何れ
でもよいが電極パッドの長手方向に対して垂直方向に載
置すると１位置ずれに対して製造上効果が大きい。この
ようＫして、電極バット責２）上に金ワイヤ（３）を載
置した状態で電極パッド（２）に対して垂直方向上方向
からボンディングツール（５）を落下させ、押圧するこ
とにより加圧接合する。この加圧接合によりｉ極パッド
（２）と金ワイヤ（３）とを接合して接合用金属突起（
６）を形成する。この加圧接合はサーモニックボンディ
ング、超音波による加圧接合でもよい。この場合ボンデ
ィングツール（５）の支持アームに超音波発振器を設置
すれば良い。A bonding metal wire, for example, a gold wire (
Place the tip of 3). The gold wire (3) is guided by a wire guide tube such as a wire feeder (4) in an oblique direction, for example, at an angle of approximately 30 degrees to the surface of the electrode pad (2). The gold wire (3) may be placed in any direction, but if it is placed perpendicular to the longitudinal direction of the electrode pad, it will be more effective in manufacturing against one positional deviation. In this way, with the gold wire (3) placed on the electrode pad (2), the bonding tool (5) is dropped from above in a vertical direction to the electrode pad (2) and pressed. Pressure join. By this pressure bonding, the i-pole pad (2) and the gold wire (3) are bonded to each other, and the bonding metal protrusion (
6) Form. This pressure bonding may be thermonic bonding or ultrasonic pressure bonding. In this case, an ultrasonic oscillator may be installed on the support arm of the bonding tool (5).
また熱圧着法を用いても金ワイヤ（３）と電極バット（
２）とが加圧接合されれば何れの方法でもよい。Furthermore, even if thermocompression bonding is used, the gold wire (3) and the electrode batt (
2) Any method may be used as long as they are joined together under pressure.
この加圧接合後、ボンディングツール（５）によシ突起
（６）を加圧状態でワイヤフィーダ（４）を、ワイヤ（
３）の電極バット（２）上に載置した方向と異なる方向
例えば逆方向に引張って突起（６）の付は根部分から切
断して接合用金属突起（６）を形成する。After this pressure bonding, the bonding tool (5) presses the wire feeder (4) while pressing the protrusion (6).
The protrusion (6) is pulled in a direction different from the direction in which it is placed on the electrode butt (2) in step 3, for example, in the opposite direction, and the base of the protrusion (6) is cut off to form a joining metal protrusion (6).
このワイヤ切断工程は加圧接合と同時にワイヤ（２）を
引張るとワイヤ（３）の付は根部分からきれいに切断さ
れる効果がある。さらにワイヤの切断工程はボンディン
グツール（５）で加圧接合後、ボンディングツール（５
）を形成した接合用突起（６）から離した状態で、ワイ
ヤ（３）を引張って切断するようにしてもよい。この場
合引張シ試験も兼ねることができる。このような接合用
突起（６）の形成工程は各ボンディング用電極パッドに
ついて、頴次実行する。In this wire cutting process, if the wire (2) is pulled at the same time as pressure bonding, the wire (3) is effectively cut cleanly from the root portion. Furthermore, the wire cutting process is performed after pressure bonding with the bonding tool (5).
) The wire (3) may be pulled and cut while being separated from the joining protrusion (6) on which the wire (3) is formed. In this case, it can also serve as a tensile test. This step of forming the bonding protrusion (6) is performed one after another for each bonding electrode pad.
この工程はＩＣ素子（１）載置テーブルを移動させても
よいし１位置認識技術と併用してワイヤフィーダ（３）
およびボンディングツール（５）を移動させて金属突起
を形成してもよい。This process may be performed by moving the IC element (1) mounting table or by using a wire feeder (3) in combination with position recognition technology.
The bonding tool (5) may also be moved to form the metal protrusion.
このようにして突起電極の形成されたＩＣ素子（１）と
対向する回路部品例えば外部導体である配線パターン上
にフェースボンディングを行うととくよシワイヤレスボ
ンディングを実行できる。When face bonding is performed on a circuit component, for example, a wiring pattern that is an external conductor, facing the IC element (1) on which the protruding electrode is formed in this manner, wireless bonding can be performed in particular.
以上説明したようＫこの実施例によれば次の効果がある
。As explained above, this embodiment has the following effects.
以上の方法と装置を用いるとワイヤボンディングに用い
るのと同様の半導体のアルミニウム電極の上に、蒸着や
めつきなどの加工工程を追加することなく、容易に安価
にワイヤレスボンディング用の金属突起を設けることが
できる。By using the above method and apparatus, metal protrusions for wireless bonding can be easily and inexpensively provided on semiconductor aluminum electrodes similar to those used for wire bonding, without adding processing steps such as vapor deposition or plating. I can do it.
突起は、はんだ材料より融点の高い金でできているので
、はんだを盛シ上げた突起のように、溶融して流失する
ことを防止する必要がない。Since the protrusions are made of gold, which has a higher melting point than the solder material, there is no need to prevent them from melting and being washed away, unlike protrusions made of solder.
まな、ワイヤボンディング後金線を切断する方法のよう
に突起の上部に金線が残ったシしないし、ボンディング
ツールの中央に穴のあいたキャピラリを用いていないの
で、穴に相当する部分に小さい突起が残らない。Also, unlike the method of cutting the gold wire after wire bonding, the gold wire does not remain on the top of the protrusion, and since the capillary with a hole in the center of the bonding tool is not used, there is a small protrusion in the part corresponding to the hole. There is no leftover.
上記実施例の方法では、ツールの先端形状に倣って、金
属突起が形成されるので、突起の先端形状を、外部導体
と接合しやすい台形にすることが容易である。In the method of the above embodiment, since the metal protrusion is formed following the shape of the tip of the tool, it is easy to make the tip of the protrusion into a trapezoid shape that is easy to bond to the external conductor.
以上のように蒸着やめつきなどの加工工程゛を用いない
ので突起を設けるために、電気エネルギや洗浄水などを
用いないので省エネルギとなる。また、外部導体と接合
するときに突起形状のばらつきによる接合歩留シの低下
の問題も解消することができた。As described above, since processing steps such as vapor deposition and plating are not used, electrical energy and cleaning water are not used to provide the protrusions, resulting in energy savings. Furthermore, the problem of reduced bonding yield due to variations in the shape of the protrusions when bonded to the external conductor could be solved.
上記実施例では、半導体の電極パッドに突起を接合して
設けたが、半導体を接続する。リードフレームや印刷配
線板の外部導体（１）のうえに金属突起を設けることも
可能である。In the above embodiment, the protrusion was bonded to the electrode pad of the semiconductor, but the semiconductor is connected. It is also possible to provide metal protrusions on the outer conductor (1) of the lead frame or printed wiring board.
Ｂ１やこれらの金属と他の金属との合金であってもよい
。B1 or an alloy of these metals and other metals may be used.
また他の方法としてはウェッジボンダーを用すて一点を
接合する毎にワイヤを切断して、金属突起を設ける方法
でもよい。Another method is to use a wedge bonder and cut the wire each time it is bonded to provide a metal protrusion.
〔他の実施例〕
上記実施例ではワイヤの切断を加圧接合後実施した例に
ついて説明したが、加圧接合中に切断工程を実施しても
よい。これはボンディングツールにより加圧しているの
で、ツールにより保護された形で切断されるためである
。[Other Embodiments] In the above embodiments, an example was described in which the wire was cut after pressure bonding, but the cutting step may be performed during pressure bonding. This is because the pressure is applied by the bonding tool, so the cutting is done while being protected by the tool.
以上説明し丸ように本発明方法によれば、突起電極形成
後ワイヤを引張って切断するだけで成形工程を設けなく
てもワイヤレスボンディング出来る効果がある。As described above, the method of the present invention has the advantage that wireless bonding can be performed by simply pulling and cutting the wire after forming the protruding electrodes, without requiring a forming process.
第１図は本発明方法の実施例を説明するための略図であ
る。
１・・・ＩＣ素子 ２・・・電極パット３・
・・ワ イ ヤ ４・・・ワイヤツイータ′
５・・・ボンディングツール ６・・・突起電極第１
図FIG. 1 is a schematic diagram for explaining an embodiment of the method of the present invention. 1... IC element 2... Electrode pad 3.
...Wire 4...Wire tweeter'
5... Bonding tool 6... Protruding electrode 1st
figure
Claims (4)
めの少なくとも一方の接合部上に接合用金属線を上記接
合部に対して斜方からワイヤ案内管により案内した状態
でボンディングツールにより加圧接合する工程と、この
工程中又は加圧接合後上記案内管による金属線の案内方
向と異なる方向に上記金属線を引張る工程とを具備して
なることを特徴とする接合用金属突起の製造方法。(1) Bonding a first circuit component and a second circuit component onto at least one of the joints with the metal wire guided diagonally to the joint by a wire guide tube. A bonding metal characterized by comprising a step of pressure bonding with a tool, and a step of pulling the metal wire in a direction different from the direction in which the metal wire is guided by the guide tube during or after the pressure bonding step. Method of manufacturing protrusions.
る特許請求の範囲第１項記載の接合用突起電極の製造方
法。(2) The method of manufacturing a protruding electrode for bonding according to claim 1, wherein the bonding portion of the circuit element is an electrode pad of a semiconductor element.
金属線の加圧接合完了と同時に金属線を引張ることを特
徴とする特許請求の範囲第１項記載の接合用突起電極の
製造方法。(3) The method for manufacturing a protruding electrode for bonding according to claim 1, characterized in that the timing of pulling the metal wire after pressure bonding of the metal wire is to pull the metal wire at the same time as the completion of pressure bonding of the metal wire. .
線を接合部上に案内した方向と逆方向に引張ることを特
徴とする特許請求の範囲第１項記載の接合用突起電極の
製造方法。(4) The protruding electrode for bonding according to claim 1, wherein the direction in which the metal wire is pulled after pressure bonding is the opposite direction to the direction in which the metal wire was guided onto the bonding portion. manufacturing method.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59238463A JPS61117846A (en) | 1984-11-14 | 1984-11-14 | Manufacture of bonding metallic projection |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59238463A JPS61117846A (en) | 1984-11-14 | 1984-11-14 | Manufacture of bonding metallic projection |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS61117846A true JPS61117846A (en) | 1986-06-05 |
Family
ID=17030601
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP59238463A Pending JPS61117846A (en) | 1984-11-14 | 1984-11-14 | Manufacture of bonding metallic projection |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS61117846A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH02111029A (en) * | 1988-10-20 | 1990-04-24 | Matsushita Electric Ind Co Ltd | Formation of bump and apparatus therefor |
| JPH02273945A (en) * | 1989-04-17 | 1990-11-08 | Shinkawa Ltd | Bump forming method |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS53116072A (en) * | 1977-03-18 | 1978-10-11 | Mitsubishi Electric Corp | Electrode forming method for semiconductor device |
-
1984
- 1984-11-14 JP JP59238463A patent/JPS61117846A/en active Pending
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS53116072A (en) * | 1977-03-18 | 1978-10-11 | Mitsubishi Electric Corp | Electrode forming method for semiconductor device |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH02111029A (en) * | 1988-10-20 | 1990-04-24 | Matsushita Electric Ind Co Ltd | Formation of bump and apparatus therefor |
| JPH02273945A (en) * | 1989-04-17 | 1990-11-08 | Shinkawa Ltd | Bump forming method |
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