JPH10199913A - Wire-bonding method - Google Patents

Wire-bonding method

Info

Publication number
JPH10199913A
JPH10199913A JP9014531A JP1453197A JPH10199913A JP H10199913 A JPH10199913 A JP H10199913A JP 9014531 A JP9014531 A JP 9014531A JP 1453197 A JP1453197 A JP 1453197A JP H10199913 A JPH10199913 A JP H10199913A
Authority
JP
Japan
Prior art keywords
electrode
wire
ball
capillary
flat
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP9014531A
Other languages
Japanese (ja)
Inventor
Riyouji Iwaki
量次 岩城
Tatsuya Nishimura
辰也 西村
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sanken Electric Co Ltd
Original Assignee
Sanken Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sanken Electric Co Ltd filed Critical Sanken Electric Co Ltd
Priority to JP9014531A priority Critical patent/JPH10199913A/en
Publication of JPH10199913A publication Critical patent/JPH10199913A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies
    • H01L24/78—Apparatus for connecting with wire connectors
    • H—ELECTRICITY
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    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
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    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144—Gold (Au) as principal constituent
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    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
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    • H01L2224/732—Location after the connecting process
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    • H01L2224/73265—Layer and wire connectors
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    • H01L2224/7825—Means for applying energy, e.g. heating means
    • H01L2224/783—Means for applying energy, e.g. heating means by means of pressure
    • H01L2224/78301—Capillary
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    • H01L2224/85009—Pre-treatment of the connector or the bonding area
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    • H01L2224/8503—Reshaping, e.g. forming the ball or the wedge of the wire connector
    • H01L2224/85035—Reshaping, e.g. forming the ball or the wedge of the wire connector by heating means, e.g. "free-air-ball"
    • H01L2224/85045—Reshaping, e.g. forming the ball or the wedge of the wire connector by heating means, e.g. "free-air-ball" using a corona discharge, e.g. electronic flame off [EFO]
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Abstract

PROBLEM TO BE SOLVED: To avoid damages of wire connection parts by forming a ball-like part of a metal wire fed from a capillary and flattening and pressing this ball- like part. SOLUTION: A metal thin wire is fed from a capillary 7, and a ball-like part is formed at the top of this wire by a discharge spark. The capillary 7 is lowered to an empty region 1a of a support board 1, where a semiconductor element 3 is not fixed, until the ball-like part of the wire to empty region 1a is slightly pressed, thereby deforming it into a flat body 11a with the lower face flat. The capillary 7 is lowered to an electrode 5 on the semiconductor element 3 to bond through thermocompression the flat lower face of the body 11a to a flat face of the electrode 5, thereby connecting one end of the wire to the electrode 5. The pressing load is not concentrated on a small surface area of the electrode 5, thereby relatively relaxing the pressure applied to the electrode 5 and hence never causing damages, such as deformation of the electrode 5 and cracking of a semiconductor substrate 4.

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【０００１】[0001]

【産業上の利用分野】本発明は半導体素子の電極等の金
属導体に金属ワイヤをボールボンディング法又はネイル
ヘッドボンディング法と呼ばれている方法でボンディン
グする方法に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for bonding a metal wire to a metal conductor such as an electrode of a semiconductor device by a method called a ball bonding method or a nail head bonding method.

【０００２】[0002]

【従来の技術】半導体素子の電極にワイヤ（金属細線）
をボールボンディング又はネイルヘッドボンディングと
称されるワイヤボンディング方法で接続する時には、ワ
イヤボンダ（自動ワイヤボンディング装置）のキャピラ
リの先端から金属細線を導出し、その先端を水素トーチ
の火炎又は放電スパーク等により溶融してボール状部分
を形成し、このボール状部分を半導体素子の電極に対し
てキャピラリで押し当て、ボール状部分を釘頭状（ネイ
ルヘッド状）にして接続する。このネイルヘッドボンデ
ィング方法は、キャピラリの引き回し方向に制限を受け
ないため、金属細線をネイルヘッドボンディング部分を
中心として３６０度いずれの方向にも張り渡せるという
利点を有する。2. Description of the Related Art Wires (fine metal wires) are used for electrodes of semiconductor devices.
Is connected by a wire bonding method called ball bonding or nail head bonding, a thin metal wire is drawn out from the tip of a capillary of a wire bonder (automatic wire bonding device), and the tip is melted by a flame of a hydrogen torch or a discharge spark. Then, a ball-shaped portion is formed, and the ball-shaped portion is pressed against an electrode of the semiconductor element by a capillary, and the ball-shaped portion is connected to a nail head (nail head). This nail head bonding method has an advantage that a thin metal wire can be stretched in any direction by 360 degrees around the nail head bonding part because there is no limitation on the direction in which the capillary is drawn.

【０００３】[0003]

【発明が解決しようとする課題】上記のネイルヘッドボ
ンディング方法において、半導体素子の電極に金属細線
を接続する時には、ボール状部分を電極に強く押圧しな
ければならない。ところが、半導体素子の半導体基体は
例えばシリコン単結晶等の割れ易い材料から成り、ま
た、電極もＡｕ等の比較的変形し易い材料から成るの
で、キャピラリによってボール状部分を電極に強く押圧
すると、電極が変形し、また半導体基体にクラックが生
じることがある。このような問題はＡｕ（金）よりも硬
度が大きいＣｕ（銅）の金属細線をボンディングする時
に発生し易い。In the above-described nail head bonding method, when connecting a thin metal wire to the electrode of the semiconductor element, the ball-shaped portion must be strongly pressed against the electrode. However, the semiconductor substrate of the semiconductor element is made of a material that is easily broken, such as silicon single crystal, and the electrode is also made of a material that is relatively easily deformed, such as Au. May be deformed and cracks may occur in the semiconductor substrate. Such a problem is likely to occur when bonding a thin metal wire of Cu (copper) having a higher hardness than Au (gold).

【０００４】そこで、本発明は、ワイヤを接続する部分
の損傷を防止することができるワイヤボンディング方法
を提供することを目的とする。Accordingly, an object of the present invention is to provide a wire bonding method capable of preventing damage to a portion for connecting a wire.

【０００５】[0005]

【課題を解決するための手段】上記課題を解決し、上記
目的を達成するための本発明は、金属導体に対して金属
ワイヤをボールボンディング法で接続する方法であっ
て、ワイヤボンディング装置のキャピラリから金属ワイ
ヤを繰り出し、この金属ワイヤにボール状部分を形成す
る工程と、前記キャピラリによって前記ボール状部分を
前記金属導体とは別の部分に押し当てて扁平体に変形す
る工程と、前記扁平体に変形された部分を前記金属導体
の平坦面にボンディングする工程とを備えていることを
特徴とするワイヤボンディング方法に係わるものであ
る。SUMMARY OF THE INVENTION In order to solve the above problems and to achieve the above object, the present invention relates to a method of connecting a metal wire to a metal conductor by a ball bonding method. Drawing out a metal wire from the metal wire, forming a ball-shaped portion on the metal wire, pressing the ball-shaped portion against a portion different from the metal conductor by the capillary to deform the metal wire into a flat body, Bonding the deformed portion to the flat surface of the metal conductor.

【０００６】[0006]

【発明の作用及び効果】本発明によればボール状部分を
そのまま金属導体に押圧しないで、予め扁平体に変形し
てから押圧する。扁平体に変形した部分は従来のボール
状部分よりも金属導体（被ボンディング部分）に対して
広い面積で接触するので、金属導体における押圧荷重の
集中が緩和され、金属導体の変形及びこの下の物体（例
えば半導体）の損傷を防ぐことができる。また、本発明
ではボール状部分の扁平化をキャピラリを使用して行う
ので、工程及び装置の複雑化を伴なわないで扁平体を得
ることができる。According to the present invention, the ball-shaped portion is not pressed against the metal conductor as it is, but is deformed into a flat body before being pressed. Since the flat deformed portion comes into contact with the metal conductor (bonded portion) in a wider area than the conventional ball-shaped portion, concentration of the pressing load on the metal conductor is reduced, and the deformation of the metal conductor and the lower portion thereof are reduced. The object (for example, a semiconductor) can be prevented from being damaged. Further, in the present invention, since the flattening of the ball-shaped portion is performed using a capillary, a flat body can be obtained without complicating the process and the apparatus.

【０００７】[0007]

【実施例】次に、図１〜図６を参照して本発明の一実施
例に係わる半導体素子に対するワイヤの接続方法を説明
する。本実施例でリード細線としての金属細線をワイヤ
ボンディングする半導体装置は、金属製支持板１の上に
半田２で固着された半導体素子３を有する。半導体素子
３はＰＮ接合を含むシリコン単結晶から成る半導体基体
４とこの上面に形成された例えば金から成る金属導体と
しての金属電極５を有する。半導体素子３は更に別の電
極及び絶縁膜等を含むが、これ等の図示は省略されてい
る。支持板１はインナーリード６と共にリードフレーム
に構成されている。Next, a method of connecting wires to a semiconductor device according to an embodiment of the present invention will be described with reference to FIGS. In this embodiment, a semiconductor device for wire bonding a thin metal wire as a thin lead wire has a semiconductor element 3 fixed on a metal support plate 1 with solder 2. The semiconductor element 3 has a semiconductor substrate 4 made of a silicon single crystal including a PN junction and a metal electrode 5 formed on the upper surface thereof as a metal conductor made of, for example, gold. The semiconductor element 3 further includes another electrode, an insulating film, and the like, but these are not shown. The support plate 1 is formed on a lead frame together with the inner leads 6.

【０００８】電極５とインナーリード６とをワイヤ（金
属細線）で接続する時には、周知のワイヤボンディング
装置を用意する。ワイヤボンディング装置は、周知のキ
ャピラリ７、移動及び加圧装置８、ボール状部分形成手
段としての周知の放電電極（電気トーチ）又は水素トー
チ、加熱手段、超音波振動手段等を有する。これ等は周
知であるので詳しい説明を省略する。キャピラリ７の孔
９には電極５よりも硬い金属であるＣｕ（銅）から成る
金属細線１０が挿通されている。なお、キャピラリ７は
電極５及び金属細線１０よりも硬い材料で形成されてい
る。When connecting the electrode 5 and the inner lead 6 with a wire (a thin metal wire), a known wire bonding apparatus is prepared. The wire bonding apparatus has a well-known capillary 7, a moving and pressing device 8, a well-known discharge electrode (electric torch) or hydrogen torch as a ball-shaped portion forming means, a heating means, an ultrasonic vibration means, and the like. Since these are well known, detailed description is omitted. A fine metal wire 10 made of Cu (copper), which is a metal harder than the electrode 5, is inserted into the hole 9 of the capillary 7. The capillary 7 is formed of a material harder than the electrode 5 and the thin metal wire 10.

【０００９】Ｃｕから成る金属細線１０をボンディング
する時には、まず、キャピラリ７より金属細線１０を繰
り出し、この先端に放電スパーク又は水素トーチにより
ボール状部分１１を形成する。このボール状部分１１は
比較的硬度が大きく、これをボール状のまま電極５に押
圧すると、半導体基体４にクラックが生じるおそれ及び
電極５が変形するおそれがある。When bonding the metal wire 10 made of Cu, the metal wire 10 is first drawn out from the capillary 7, and a ball-shaped portion 11 is formed at the tip of the metal wire 10 by a discharge spark or a hydrogen torch. The ball-shaped portion 11 has a relatively high hardness. If the ball-shaped portion 11 is pressed against the electrode 5 in a ball shape, a crack may be generated in the semiconductor substrate 4 and the electrode 5 may be deformed.

【００１０】次に、このボール状部分１１の形成された
金属細線１０を伴なったキャピラリ７を、支持板１の半
導体素子３が固着されていない空き領域１ａの上方に移
動する。なお、キャピラリ７を空き領域１ａの上方に移
動させた後に、金属細線１０にボール状部分１１を形成
してもよい。Next, the capillary 7 with the thin metal wire 10 on which the ball-shaped portion 11 is formed is moved to a position above the empty area 1a of the support plate 1 where the semiconductor element 3 is not fixed. Note that the ball-shaped portion 11 may be formed on the thin metal wire 10 after the capillary 7 is moved above the empty region 1a.

【００１１】次に、図２に示すように、キャピラリ７を
支持板１の空き領域１ａに向って下降させて、金属細線
１０のボール状部分１１を空き領域１ａに軽く押圧さ
せ、ボール状部分１１を図２に示すように、下面が平坦
な扁平体１１ａに変形する。この時、扁平体１１ａの厚
みＴ1 を図４に示す最終的な扁平体１１ｂの厚みＴ2 に
比べて若干厚くする。Next, as shown in FIG. 2, the capillary 7 is lowered toward the empty area 1a of the support plate 1, and the ball-shaped portion 11 of the thin metal wire 10 is lightly pressed against the empty area 1a. As shown in FIG. 2, 11 is deformed into a flat body 11a having a flat lower surface. At this time, the thickness T1 of the flat body 11a is made slightly thicker than the final thickness T2 of the flat body 11b shown in FIG.

【００１２】次に、図３に示すように、扁平体１１ａを
有する金属細線１０を伴なってキャピラリ７を半導体素
子３の電極５上に移動する。Next, as shown in FIG. 3, the capillary 7 is moved onto the electrode 5 of the semiconductor element 3 with the thin metal wire 10 having the flat body 11a.

【００１３】次に、図４に示すように、キャピラリ７を
半導体素子３上の電極５に向って下降させ、扁平体１１
ａの平坦な下面を電極５の平坦面に熱圧着して金属細線
１０の一端を電極５に接続する。即ち、扁平体１１ａの
下面を電極５の平坦面に当接させた後、キャピラリ７の
下面で扁平体１１ａを電極５に対して押圧し、厚さＴ2
の釘頭形状（ネイルヘッド形状）の扁平体１１ｂにして
電極５に熱圧着する。この扁平体１１ａを電極５に押圧
する時は、支持板１と共に電極５を加熱しておく。な
お、この押圧の際に、キャピラリ７を電極５の上面と平
行する方向に超音波振動させる場合もある。Next, as shown in FIG. 4, the capillary 7 is lowered toward the electrode 5 on the semiconductor element 3, and
The flat lower surface of “a” is thermocompression-bonded to the flat surface of the electrode 5 and one end of the fine metal wire 10 is connected to the electrode 5. That is, after the lower surface of the flat body 11a is brought into contact with the flat surface of the electrode 5, the flat body 11a is pressed against the electrode 5 by the lower surface of the capillary 7 to have a thickness T2.
The flat body 11b having a nail head shape (nail head shape) is thermocompression-bonded to the electrode 5. When the flat body 11a is pressed against the electrode 5, the electrode 5 is heated together with the support plate 1. At this time, the capillary 7 may be ultrasonically vibrated in a direction parallel to the upper surface of the electrode 5 in some cases.

【００１４】金属細線１０の一端の接続を終えたら、図
５に示すように、キャピラリ７から金属細線１０を繰り
出しながら、キャピラリ７をインナーリード６のボンデ
ィングパッド部分６ａの上方に移動させる。続いて、図
６に示すように、金属細線１０の他端をボンディングパ
ッド部分６ａに対してステッチボンディングする。即
ち、キャピラリ７の下面で金属細線１０を径方向に押圧
し、金属細線１０をボンディングパッド部分６ａの上面
に熱圧着する。金属細線１０をボンディングパッド部分
６ａに押圧する時は、ボンディングパッド部分６ａを加
熱しておく。なお、この押圧の際に、キャピラリ７をボ
ンディングパッド部分６ａの上面と平行する方向に超音
波振動させる場合もある。After the connection of one end of the thin metal wire 10 is completed, as shown in FIG. 5, the capillary 7 is moved above the bonding pad portion 6a of the inner lead 6 while feeding out the thin metal wire 10 from the capillary 7. Subsequently, as shown in FIG. 6, the other end of the thin metal wire 10 is stitch-bonded to the bonding pad portion 6a. That is, the thin metal wire 10 is pressed radially on the lower surface of the capillary 7, and the thin metal wire 10 is thermocompression-bonded to the upper surface of the bonding pad portion 6a. When pressing the thin metal wire 10 against the bonding pad portion 6a, the bonding pad portion 6a is heated. At this time, the capillary 7 may be ultrasonically vibrated in a direction parallel to the upper surface of the bonding pad portion 6a.

【００１５】次に、キャピラリ７をボンディングパッド
部分６ａの上面から離間させる方向に移動させ且つ金属
細線１０をステッチボンディング部分１２の延長部分で
切断する。Next, the capillary 7 is moved in a direction away from the upper surface of the bonding pad portion 6a, and the thin metal wire 10 is cut at an extension of the stitch bonding portion 12.

【００１６】本実施例は次の作用効果を有する。 （イ） ボール状部分１１を扁平体１１ａに予め変形
し、この下面を平坦にした後に、これを電極５に押圧し
て圧着するので、扁平体１１ａと電極５との圧着面積が
十分に大きくなる。このため、扁平体１１ａの押圧荷重
が電極５の小面積部分に集中して加わらず、電極５の受
ける圧力を相対的に緩和でき、金属細線１０がＣｕのよ
うに比較的硬い材料であるにも拘らず、Ｃｕよりも柔ら
かい材料から成る電極５の変形が少なくなるのみでな
く、半導体基体４にクラック等の損傷を生じさせない。 （ロ） ボール状部分１１を半導体素子３が固着されて
いる支持板１に押圧して扁平化するので、キャピラリ７
の一連の上下動作のみでボール状部分１１の扁平化が図
れる。このため、実質的に工程を増加させることなく、
扁平体１１ａを容易に得ることができる。This embodiment has the following functions and effects. (A) The ball-shaped portion 11 is deformed into a flat body 11a in advance, and after flattening the lower surface thereof, it is pressed against the electrode 5 to be pressed, so that the crimping area between the flat body 11a and the electrode 5 is sufficiently large. Become. For this reason, the pressing load of the flat body 11a is not concentrated on the small area portion of the electrode 5, the pressure applied to the electrode 5 can be relatively relaxed, and the thin metal wire 10 is a relatively hard material such as Cu. Nevertheless, not only is the deformation of the electrode 5 made of a material softer than Cu reduced, but also the semiconductor substrate 4 is not damaged such as cracks. (B) Since the ball-shaped portion 11 is pressed against the support plate 1 to which the semiconductor element 3 is fixed and flattened, the capillary 7
The flattening of the ball-shaped portion 11 can be achieved only by a series of vertical movements. Therefore, without substantially increasing the number of steps,
The flat body 11a can be easily obtained.

【００１７】[0017]

【変形例】本発明は上述の実施例に限定されるものでな
く、例えば次の変形が可能なものである。 （１） 図７に示すように自動ワイヤボンディング装置
に上面が平坦な扁平体形成用部材１３を設け、駆動装置
１４によってこの扁平体形成用部材１３を選択的にボー
ル状部分１１の下に配置し、この扁平体形成用部材１３
の上にボール状部分１１を押圧して扁平体に変形するこ
とができる。 （２） 金属細線をＣｕ細線に限ることなく、Ａｕ細線
とすることができる。 （３） 半導体素子に限ることなく、集積回路装置、及
び他の電子部品におけるワイヤボンディングにも本発明
を適用し得る。[Modifications] The present invention is not limited to the above-described embodiment, and for example, the following modifications are possible. (1) As shown in FIG. 7, a flat body forming member 13 having a flat upper surface is provided in an automatic wire bonding apparatus, and the flat body forming member 13 is selectively disposed below the ball-shaped portion 11 by a driving device 14. The flat body forming member 13
The ball-shaped portion 11 can be deformed into a flat body by pressing the ball-shaped portion 11 on the top. (2) The Au thin wire can be used instead of the Cu thin wire. (3) The present invention can be applied not only to semiconductor elements but also to wire bonding in integrated circuit devices and other electronic components.

【図面の簡単な説明】[Brief description of the drawings]

【図１】本発明の実施例に従う半導体装置におけるワイ
ヤボンディングの最初の工程を示す断面図である。FIG. 1 is a cross-sectional view showing a first step of wire bonding in a semiconductor device according to an embodiment of the present invention.

【図２】ボール状部分を扁平体に変形する工程を示す断
面図である。FIG. 2 is a cross-sectional view showing a step of transforming a ball-shaped portion into a flat body.

【図３】電極に扁平体を圧着する直前の状態を示す断面
図である。FIG. 3 is a cross-sectional view showing a state immediately before a flat body is pressure-bonded to an electrode.

【図４】扁平体を電極に熱圧着した状態を示す断面図で
ある。FIG. 4 is a cross-sectional view showing a state where a flat body is thermocompression-bonded to an electrode.

【図５】熱圧着が終了した後の状態を示す断面図であ
る。FIG. 5 is a cross-sectional view showing a state after the completion of thermocompression bonding.

【図６】ボンディングパッド部分に金属細線をステッチ
ボンディングした状態を示す断面図である。FIG. 6 is a cross-sectional view showing a state where a fine metal wire is stitch-bonded to a bonding pad portion.

【図７】扁平体を形成する変形例を示す断面図である。FIG. 7 is a cross-sectional view showing a modification for forming a flat body.

【符号の説明】[Explanation of symbols]

１ 支持板 ３ 半導体素子 ５ 電極 ７ キャピラリ １０ 金属細線 １１ ボール状部分 １１ａ 扁平体 DESCRIPTION OF SYMBOLS 1 Support plate 3 Semiconductor element 5 Electrode 7 Capillary 10 Fine metal wire 11 Ball-shaped part 11a Flat body

Claims (1)

【特許請求の範囲】[Claims] 【請求項１】 金属導体に対して金属ワイヤをボールボ
ンディング法で接続する方法であって、 ワイヤボンディング装置のキャピラリから金属ワイヤを
繰り出し、この金属ワイヤにボール状部分を形成する工
程と、 前記キャピラリによって前記ボール状部分を前記金属導
体とは別の部分に押し当てて扁平体に変形する工程と、 前記扁平体に変形された部分を前記金属導体の平坦面に
ボンディングする工程とを備えていることを特徴とする
ワイヤボンディング方法。1. A method of connecting a metal wire to a metal conductor by a ball bonding method, comprising: feeding a metal wire from a capillary of a wire bonding apparatus to form a ball-shaped portion on the metal wire; Pressing the ball-shaped portion against a portion different from the metal conductor to deform the flat portion into a flat body, and bonding the portion deformed into the flat body to a flat surface of the metal conductor. A wire bonding method characterized by the above-mentioned.
JP9014531A 1997-01-10 1997-01-10 Wire-bonding method Pending JPH10199913A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP9014531A JPH10199913A (en) 1997-01-10 1997-01-10 Wire-bonding method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9014531A JPH10199913A (en) 1997-01-10 1997-01-10 Wire-bonding method

Publications (1)

Publication Number Publication Date
JPH10199913A true JPH10199913A (en) 1998-07-31

Family

ID=11863735

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9014531A Pending JPH10199913A (en) 1997-01-10 1997-01-10 Wire-bonding method

Country Status (1)

Country Link
JP (1) JPH10199913A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2007010510A2 (en) * 2006-04-03 2007-01-25 Michael Mayer Method and device for wire bonding with low mechanical stress
WO2015170738A1 (en) * 2014-05-08 2015-11-12 ローム株式会社 Method for manufacturing wire bonding structure, wire bonding structure, and electronic device

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2007010510A2 (en) * 2006-04-03 2007-01-25 Michael Mayer Method and device for wire bonding with low mechanical stress
WO2007010510A3 (en) * 2006-04-03 2007-06-07 Michael Mayer Method and device for wire bonding with low mechanical stress
WO2015170738A1 (en) * 2014-05-08 2015-11-12 ローム株式会社 Method for manufacturing wire bonding structure, wire bonding structure, and electronic device
JPWO2015170738A1 (en) * 2014-05-08 2017-04-20 ローム株式会社 Wire bonding structure manufacturing method, wire bonding structure, and electronic device
US10115699B2 (en) 2014-05-08 2018-10-30 Rohm Co., Ltd. Method for manufacturing wire bonding structure, wire bonding structure, and electronic device

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