JPS6178128A - Bonding tool for manufacture of semiconductor device - Google Patents

Bonding tool for manufacture of semiconductor device

Info

Publication number
JPS6178128A
JPS6178128A JP59199579A JP19957984A JPS6178128A JP S6178128 A JPS6178128 A JP S6178128A JP 59199579 A JP59199579 A JP 59199579A JP 19957984 A JP19957984 A JP 19957984A JP S6178128 A JPS6178128 A JP S6178128A
Authority
JP
Japan
Prior art keywords
wire
bonding
capillary
bonding tool
chip
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP59199579A
Other languages
Japanese (ja)
Inventor
Shiro Oba
大場　四郎
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP59199579A priority Critical patent/JPS6178128A/en
Publication of JPS6178128A publication Critical patent/JPS6178128A/en
Pending legal-status Critical Current

Links

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies
    • H01L24/78—Apparatus for connecting with wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H—ELECTRICITY
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    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
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    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
    • H—ELECTRICITY
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    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
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    • H01L2224/484—Connecting portions
    • H01L2224/4845—Details of ball bonds
    • H01L2224/48451—Shape
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    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
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    • H01L2224/484—Connecting portions
    • H01L2224/48455—Details of wedge bonds
    • H—ELECTRICITY
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    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
    • H01L2224/48465—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/4847—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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    • H01L2224/78—Apparatus for connecting with wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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    • H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/78—Apparatus for connecting with wire connectors
    • H01L2224/7825—Means for applying energy, e.g. heating means
    • H01L2224/783—Means for applying energy, e.g. heating means by means of pressure
    • H01L2224/78301—Capillary
    • H01L2224/78302—Shape
    • H—ELECTRICITY
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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    • H01L2224/78—Apparatus for connecting with wire connectors
    • H01L2224/7825—Means for applying energy, e.g. heating means
    • H01L2224/783—Means for applying energy, e.g. heating means by means of pressure
    • H01L2224/78313—Wedge
    • H—ELECTRICITY
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    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/78—Apparatus for connecting with wire connectors
    • H01L2224/7825—Means for applying energy, e.g. heating means
    • H01L2224/783—Means for applying energy, e.g. heating means by means of pressure
    • H01L2224/78313—Wedge
    • H01L2224/78314—Shape
    • H01L2224/78317—Shape of other portions
    • H01L2224/78318—Shape of other portions inside the capillary
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    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H—ELECTRICITY
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    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/852—Applying energy for connecting
    • H01L2224/85201—Compression bonding
    • H01L2224/85205—Ultrasonic bonding
    • H—ELECTRICITY
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    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/91—Methods for connecting semiconductor or solid state bodies including different methods provided for in two or more of groups H01L2224/80 - H01L2224/90
    • H01L2224/92—Specific sequence of method steps
    • H01L2224/922—Connecting different surfaces of the semiconductor or solid-state body with connectors of different types
    • H01L2224/9222—Sequential connecting processes
    • H01L2224/92242—Sequential connecting processes the first connecting process involving a layer connector
    • H01L2224/92247—Sequential connecting processes the first connecting process involving a layer connector the second connecting process involving a wire connector
    • H—ELECTRICITY
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01082—Lead [Pb]

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Wire Bonding (AREA)

Abstract

PURPOSE:To improve the bondability while extending the life of bonding tool by a method wherein a ring type groove is provided concentrically with a guide hole guiding a wire on the edge of capillary. CONSTITUTION:A capillary 9 is provided with a guide hole 10 for inserting a wire 6 thereinto while a compression plane 11 rubbing against the wire 6 by vibration is flattened to break down the wire 6 effectively besides the compression plane 11 is provided with a ring type groove 12 concentrically with the guide hole 10. In such a constitution of the capillary 9, the bonding part may be fixed on two points to hold the wire 6 securely by two recessions 12 efficiently transmitting the ultrasonic vibration from the capillary 9 to the wire 6. Resultantly, the ultrasonic output (amplitude) may be reduced to extend the service life of capillary 9.

Description

【発明の詳細な説明】 （技術分野〕 本発明は半導体装置およびその製造において用いるボン
ディングツールに関する。DETAILED DESCRIPTION OF THE INVENTION (Technical Field) The present invention relates to a semiconductor device and a bonding tool used in its manufacture.

〔背景技術〕[Background technology]

半導体装置等の電子部品は種々の構造があるが、その一
つの構造とし、てリードフレームのタブと呼ばれる支持
板上にチップが固定（チップボンディング）され、この
チップの電極とタブの周辺に内端を臨ませるリードの内
端とがワイヤで接続（ワイヤボンディング）された構造
が知られている。Electronic components such as semiconductor devices have various structures, but in one structure, a chip is fixed (chip bonding) on a support plate called a tab of a lead frame, and internal bonding is performed around the electrodes of the chip and the tab. A structure is known in which the inner ends of the leads are connected with wires (wire bonding).

前記ワイヤボンディングは、たとえば、株式会社プレス
ジャーナル発行「月刊Ｓｅｍ１ｃｏｎｄｕ−ｃｔｏｒ　
　ＷｏｒｌｄＪ　１９８２年１１月号、昭和５８年ｌＯ
月１５日発行、Ｐ４０〜Ｐ４５にも記載されているよう
に、熱圧着、超音波ボンディング、サーモソニック（超
音波付加熱圧着）による方法が知られている。The wire bonding is described, for example, in "Monthly Sem1condu-ctor" published by Press Journal Co., Ltd.
WorldJ November 1982 issue, 1982 lO
As described in P40 to P45, published on May 15, methods using thermocompression bonding, ultrasonic bonding, and thermosonic (thermocompression bonding with ultrasonic waves) are known.

そして、前記文献にも記載されているように、上記のよ
うなボンダ（ボンディング装置）にとっては、ボンダビ
リティおよび結線後のワイヤの形（ループ形状）が良い
ことが臨まれる。これは、半導体装置の信幀度向上およ
び製造歩留りの向上を図るための必須条件である。また
、同文献には、前記ループ形状の良否に対してボンディ
ングツール（たとえば、Ｆｌｉａりが影響することも指
摘されている。As described in the above-mentioned literature, the above-mentioned bonder (bonding device) is required to have good bondability and the shape of the wire after connection (loop shape). This is an essential condition for improving reliability and manufacturing yield of semiconductor devices. The same document also points out that the quality of the loop shape is influenced by the bonding tool (for example, FIA).

一方、ボンディングツール、特にワイヤボンディング用
のボンディングツールは、たとえば、江業調査会発行［
を子材料Ｊ　１９８１年８月号、昭和５７年８月１日発
行、Ｐ６８〜Ｐ７０に記載されているように、ガラス、
セラミックガラス、超硬（ＷＣ，ＴａＣ）、セラミック
（アルミナ）。On the other hand, bonding tools, especially bonding tools for wire bonding, are available for example in [
Glass,
Ceramic glass, carbide (WC, TaC), ceramic (alumina).

ルビー（溶融アルミナ）等によって形成されているが、
より高いボンディング耐用回数が希求されている。　と
ころで、本願の検討により下記のことがあきらかとなっ
た。すなわち、バイブリフトＩＣの組立におけるボンデ
ィングは、セラミック基板の主面に設けられた導体層は
スクリーン印刷等によって形成されるため、その導体層
の平坦度は必ずしも良好であるとは言えず、導体層への
ボンダビリティを常に良好に維持することは難しい。It is formed from ruby (molten alumina), etc.
Higher bonding durability is desired. By the way, the following has become clear through consideration of this application. In other words, in the bonding process for assembling the VibeLift IC, the conductor layer provided on the main surface of the ceramic substrate is formed by screen printing, etc., so the flatness of the conductor layer is not necessarily good. It is difficult to always maintain good bondability.

また、ボンディング状況が一定となり難いことから、ボ
ンディングツールも摩耗し、易くなり、ボンディングツ
ールの寿命も短くなる傾向になり易く、ボンディングツ
ールの交換も多くなり、作業性の向上の妨げとなってい
る。特に、圧着と振動（ｉｌｌり付けも含む）動作によ
るサーモソニックボンディングの場合はボンディングツ
ールがより摩耗し易くなるため、ボンダビリティおよび
ループ形状を良好に維持できるボンディング回数が減少
し、ボンディングツールの寿命が短（なる０本発明は上
記にかんがみなされたものである。In addition, since the bonding condition is difficult to maintain constant, the bonding tool also tends to wear out and become easy to wear, which tends to shorten the life of the bonding tool, which increases the need for replacement of the bonding tool, which hinders the improvement of work efficiency. . In particular, in the case of thermosonic bonding due to crimping and vibration (including illumination) operations, the bonding tool is more likely to wear out, which reduces the number of bonding operations that can maintain good bondability and loop shape, and reduces the lifespan of the bonding tool. is short (0) The present invention is conceived in view of the above.

〔発明の目的〕[Purpose of the invention]

本発明の目的はボンディングの信顛度の高い半導体装置
を提供することにある。An object of the present invention is to provide a semiconductor device with high bonding reliability.

本発明の他の目的はボンダビリティが良好にできるボン
ディングツールを提供することにある。Another object of the present invention is to provide a bonding tool with good bondability.

本発明の他の目的は寿命が長くできるボンディングツー
ルを提供することにある。Another object of the present invention is to provide a bonding tool that has a long service life.

本発明の前記ならびにそのほかの目的と新規な特徴は、
本明細書の記述および添付図面からあきらかになるであ
ろう。The above and other objects and novel features of the present invention include:
It will become clear from the description of this specification and the accompanying drawings.

〔発明の１既要〕 本願において開示される発明のうち代表的なものの概要
を簡単に説明すれば、下記のとおりである。[1 Summary of the Invention] A brief summary of typical inventions disclosed in this application is as follows.

すなわち、本発明にあっては、ワイヤを保持するキャピ
ラリの先端面にワイヤを案内するガイド孔に同心的にリ
ング状の溝を設け、ワイヤボンディング時にはこの溝内
にワイヤの一部が入り込むようにすることによって、ワ
イヤを確実に保持できるため、キャピラリからの超音波
振動のワイヤに対する伝達効率が高くなり、前記溝の内
周側および外周側の部分で良好な接着ができるようにな
ヮていることから、ボンダビリティ、が向上する。That is, in the present invention, a ring-shaped groove is provided concentrically in the guide hole that guides the wire on the tip surface of the capillary that holds the wire, and a part of the wire enters into this groove during wire bonding. By doing so, the wire can be held securely, so that the transmission efficiency of ultrasonic vibrations from the capillary to the wire is increased, and good adhesion can be achieved at the inner and outer peripheral sides of the groove. Therefore, bondability is improved.

また、超音波振動の伝達効率が高くできることによって
、超音波出力（振幅）を小さくすることができ、ボンデ
ィングツールの長寿命化も達成できる。Further, by increasing the transmission efficiency of ultrasonic vibrations, the ultrasonic output (amplitude) can be reduced, and the life of the bonding tool can be extended.

（実施例〕 第１図は本発明の一実施例によるバイブリフトＩＣの一
部を示す断面図、第２図は同じくワイヤが張られた状態
を示す部分的な平面図、第３図は同じ（ワイヤボンディ
ング状態を示すワイヤボンディング装置の概要を示す正
面図、第４０は同じくキャピラリの先端部分を示す断面
図、第５図は同じくチップの電極にワイヤを接続する最
初の状態を示す断面図、第６図は同じくチップの電極に
ワイヤを接続した状態を示す断面図、第７図は同じく導
体層上にワイヤを接続した状態を示す断面図である。(Example) Fig. 1 is a cross-sectional view showing a part of a Vibelift IC according to an embodiment of the present invention, Fig. 2 is a partial plan view showing a state in which the wire is stretched, and Fig. 3 is the same. (A front view showing an outline of the wire bonding apparatus showing the wire bonding state, No. 40 is a cross-sectional view showing the tip of the capillary, and FIG. 5 is a cross-sectional view showing the initial state of connecting the wire to the electrode of the chip. FIG. 6 is a sectional view similarly showing a state in which wires are connected to the electrodes of the chip, and FIG. 7 is a sectional view similarly showing a state in which wires are connected to a conductor layer.

本発明の半導体装置は第１図および第２図の要部図面で
示すように、セラミック板ｌからなる配線基板２の主面
に固定されたチップ３の電極４と、導体層（リード）５
の内端とは、ワイヤ６で接続されている。前記チップ３
は配［５板２の主面にあらかじめ設けられた導体層７に
半田、銀ペースト等の接合材８によって固定されている
。なお、前記導体層（リード）５および導体層７はセラ
ミック板ｌの主面に印刷によって同時に形成される。As shown in the main part drawings of FIGS. 1 and 2, the semiconductor device of the present invention includes an electrode 4 of a chip 3 fixed to the main surface of a wiring board 2 made of a ceramic plate 1, and a conductor layer (lead) 5.
is connected to the inner end of the wire 6 by a wire 6. The chip 3
is fixed to a conductor layer 7 previously provided on the main surface of the board 2 with a bonding material 8 such as solder or silver paste. Note that the conductor layer (lead) 5 and the conductor layer 7 are simultaneously formed on the main surface of the ceramic plate 1 by printing.

ところで、前記チップ３の電極４とリード５を結線する
ワイヤ６は金線からなり、かつ第４図で示されるような
特別の構造を有するキャピラリ９によって接続されてい
る。Incidentally, the wire 6 connecting the electrode 4 of the chip 3 and the lead 5 is made of gold wire, and is connected by a capillary 9 having a special structure as shown in FIG.

キャピラリ９は中心に数十μｍの直径のワイヤ６が挿入
されるガイド孔１０を存している。また、キャピラリ９
の先端、すなわち、前記ワイヤ６を押し付け、振動によ
って擦り付ける押圧面１１は平坦となってワイヤ６の押
し潰しが有効に行えるようになっているとともに、その
押圧面１１には、前記ガイド孔１０と同心円的に設けら
れたリング状の溝（冨み）　１２が設けられている。前
記窪み１２は直径が１８０〜２００μｍの押圧面１１の
略中間に沿って設けられている。また、前記窪み１２は
その幅が１０μｍ前後、深さが１５〜２０μｍ程度とな
っている。これは、ワイヤ６の押し付は振動時に押圧部
分から外れたワイヤ６部分がこの窪み１２部分に入るこ
とによって、ワイヤ６カキヤビラリ９により確実に保持
されるための寸法であり、かつ磨滅によって生じたワイ
ヤ屑が窪み１２に溜まり難い寸法でもある。また、前記
キャピラリ９は一般に使用されているセラミック。The capillary 9 has a guide hole 10 in its center into which a wire 6 having a diameter of several tens of micrometers is inserted. Also, capillary 9
The tip of the wire 6, that is, the pressing surface 11 on which the wire 6 is pressed and rubbed by vibration is flat so that the wire 6 can be crushed effectively, and the pressing surface 11 has the guide hole 10 and A ring-shaped groove (thickness) 12 is provided concentrically. The depression 12 has a diameter of 180 to 200 μm and is provided approximately along the middle of the pressing surface 11 . Further, the recess 12 has a width of about 10 μm and a depth of about 15 to 20 μm. This is because when the wire 6 is pressed, the part of the wire 6 that comes off from the pressed part when it vibrates enters the recess 12 and is securely held by the cavity 9 of the wire 6. It is also dimensioned to prevent wire debris from accumulating in the recess 12. Further, the capillary 9 is made of a commonly used ceramic.

ルビー等によって形成されていて、材質面からみてもボ
ンディング使用回数が長くなるように配慮されている。It is made of ruby or the like, and considering the material, consideration has been given to increasing the number of bonding uses.

このようなキャピラリ９によれば、ボンディング部分は
２箇所でそれぞれ固定される。すなわち、ボンディング
は圧着と超音波振動とによるサーモソニックボンディン
グによることおよびワイヤ６の一部がキャピラリ９に直
接押圧されないでキャピラリ９の窪み１２内に逃げるこ
とから、チップ３の電極４におけるボンディング部分で
は、第１図および第２図ならびに第４図に示されるよう
に、ａ、ｂなる幅のリング状の接合面によって接合され
る（第２図においてクロスハンチングが施された部分が
リング状接合部１３となる。）。また、リード５側では
、第２図に示されるように、ワイヤ６はクロスハツチン
グで示された２条の接合部１４で接合されている。なお
、キャピラリ９の窪み１２に対応するワイヤ６部分は全
く接合されないわけではなく、前記リング状接合部１３
や接合部１４の接合強度よりは接合強度が小さいことを
意味するだけである。According to such a capillary 9, the bonding portions are fixed at two locations. That is, since the bonding is thermosonic bonding using crimping and ultrasonic vibration, and a part of the wire 6 escapes into the recess 12 of the capillary 9 without being directly pressed against the capillary 9, the bonding part of the electrode 4 of the chip 3 , as shown in FIGS. 1 and 2, and FIG. 13). Further, on the lead 5 side, as shown in FIG. 2, the wire 6 is joined at two joints 14 shown by cross hatching. Note that the portion of the wire 6 corresponding to the recess 12 of the capillary 9 is not bonded at all, and the ring-shaped bonded portion 13
This simply means that the bonding strength is smaller than that of the bonding portion 14 or the bonding portion 14 .

ここで、サーモソニックポンディング装置についてＰｊ
Ｌｌに説明する。サーモソニックボンディング装置は、
振動をワイヤ６に印可する必要があることから、方向性
がある。そこで、サーモソニックボンディング装置の本
体Ｉ５は、第３図に示されるように、ＸＹテーブル１６
（ＸＹ平行移動可能）上に支持されるとともに、昇降す
るようになっている。また、本体１５からはアーム１７
が延在し、その先端には第４図に示されるキャピラリ９
が取付けられている。キャピラリ９はアーム１７の延び
る方向に振動（たとえば、１μｍ以下の振幅で超音波振
動する）する。特に、本発明のサーモソニックボンディ
ング装置は、キャピラリ９の窪み１２の存在効果によっ
てワイヤ６が確実に保持され、ワイヤ６へのキャピラリ
９がらの超音波振動の伝達効率が高いことから、超音波
出力（振幅）を小さくすることができるため、キャピラ
リ９の寿命が長くなる。また、キャピラリ９の寿命の点
で言えば、キャピラリ９に設けられた窪み１２の幅、深
さが適度の寸法となっていることがら、ワイヤ６の屑が
溜まり難く、常にキャピラリ９はワイヤ６を確実に保持
しながらワイヤボンディングができるため、キャピラリ
９の長寿命化が維持できると言える。Here, regarding the thermosonic pounding device, Pj
Explain to Ll. Thermosonic bonding equipment is
Since it is necessary to apply vibration to the wire 6, there is directionality. Therefore, as shown in FIG. 3, the main body I5 of the thermosonic bonding apparatus is
(XY translation possible) It is supported above and can be moved up and down. Also, from the main body 15, the arm 17
extends, and at its tip there is a capillary 9 shown in FIG.
is installed. The capillary 9 vibrates in the direction in which the arm 17 extends (eg, vibrates ultrasonically with an amplitude of 1 μm or less). In particular, in the thermosonic bonding device of the present invention, the wire 6 is reliably held due to the effect of the presence of the recess 12 in the capillary 9, and the transmission efficiency of ultrasonic vibrations from the capillary 9 to the wire 6 is high, so that the ultrasonic output is (amplitude) can be made small, so the life of the capillary 9 is extended. In addition, in terms of the life of the capillary 9, since the width and depth of the recess 12 provided in the capillary 9 are appropriate, it is difficult for debris from the wire 6 to accumulate, and the capillary 9 is always connected to the wire 6. Since wire bonding can be performed while reliably holding the capillary 9, it can be said that the life of the capillary 9 can be maintained for a long time.

また、配線基板２等の被処理物をａ置するテーブル１８
は支軸１９によって支持される。この結果、ＸＹテーブ
ル１６の平面のＸＹ方向の移動操作によってキャピラリ
９は配線基板２の所望の位置に正確に移動することがで
きる。Also, a table 18 on which a workpiece such as a wiring board 2 is placed.
is supported by a support shaft 19. As a result, the capillary 9 can be accurately moved to a desired position on the wiring board 2 by moving the plane of the XY table 16 in the XY directions.

つぎに、このようなサーモソニノクポンディング装置に
よるワイヤボンディングについて、第５図〜第７図を参
照しながら簡単に説明する。Next, wire bonding using such a thermosonic bonding device will be briefly explained with reference to FIGS. 5 to 7.

最初に、金からなるワイヤ６をガイド孔ｌＯ内に保持し
たキャピラリ９は、第５図に示されるように、キャピラ
リ９の先端から突出した部分が電気トーチによって加熱
され、金ボール２０とされる。そして、このキャピラリ
９は第１ボンディング位置であるチップ３の所定の電極
４の真上に移動される。First, as shown in FIG. 5, the capillary 9 holding the gold wire 6 in the guide hole 10 is heated by an electric torch to form the gold ball 20. . Then, this capillary 9 is moved directly above a predetermined electrode 4 of the chip 3, which is the first bonding position.

つぎに、第６図に示されるように、キャピラリ９は降下
して金ボール２０を熱圧着および超音波振動によって押
し潰してワイヤ６を電極４に接続する。Next, as shown in FIG. 6, the capillary 9 descends and crushes the gold ball 20 by thermocompression bonding and ultrasonic vibration to connect the wire 6 to the electrode 4.

金ポール２０部分の電極４に対する接続が終了すると、
前記キャピラリ９は第７図の矢印に示されるように、上
昇、水平移動、降下と連続的に移動して、第２ボンディ
ング位置であるリード５上にワイヤ６の途中部分を熱圧
着しかつ超音波振動によって固定する。その後、キャピ
ラリ９は上昇しかつワイヤ６は図示しないクランパーに
よって引っ張られて第２ボンディング部分近傍で分断さ
れる。なお、キャピラリ９が第１ボンディング位置から
第２ボンディング位置に移動する際、キャピラリ９の押
圧面１１が汚れていないことから、ガイド孔ｌＯから繰
り出されるワイヤ６は良好に引き出されるため、ワイヤ
ループ形状は最も好ましい形状となり、不所望の部分に
垂れ下がって接触したりするようなことはない。When the connection of the gold pole 20 part to the electrode 4 is completed,
As shown by the arrows in FIG. 7, the capillary 9 continuously moves upward, horizontally, and downward to thermocompress the middle part of the wire 6 onto the lead 5, which is the second bonding position. Fixed by sonic vibration. Thereafter, the capillary 9 rises, and the wire 6 is pulled by a clamper (not shown) and separated near the second bonding portion. Note that when the capillary 9 moves from the first bonding position to the second bonding position, since the pressing surface 11 of the capillary 9 is not dirty, the wire 6 fed out from the guide hole IO is pulled out well, so that the wire loop shape is has the most desirable shape, and does not hang down and come into contact with undesired areas.

このようにして、順次必要箇所のワイヤボンディングが
行われる。In this way, wire bonding is performed at the necessary locations one after another.

〔効果〕〔effect〕

＋１１本発明によれば、キャピラリ９の押圧面１１に設
けられた窪み１２の存在効果によって、キャピラリから
のワイヤに対する超音波振動の伝達効率が高（なるため
、ボンダビリティが向上し、ボンディングの信超度向上
が達成できるという効果が得られる。+11 According to the present invention, due to the effect of the presence of the depression 12 provided on the pressing surface 11 of the capillary 9, the transmission efficiency of ultrasonic vibration from the capillary to the wire is high (therefore, bondability is improved and bonding reliability is improved). The effect is that a super-improvement can be achieved.

（２）上記＋１）から、本発明によれば、超音波振動の
伝達効率が高くできることによって、超音波出力（振幅
）を小さくすることができ、ボンディングツールの長寿
命化が達成できるという効果が得られる。(2) From +1) above, according to the present invention, by increasing the transmission efficiency of ultrasonic vibration, the ultrasonic output (amplitude) can be reduced, and the life of the bonding tool can be extended. can get.

（３）上記（１）から、本発明によればボンディングの
歩留りが向上するという効果が得られる。(3) From the above (1), according to the present invention, the effect of improving the bonding yield can be obtained.

（４）上記（１）より、本発明によれば、キャピラリ９
の押圧面に窪みがあることより、リード側でのボンディ
ングは２点ボンディングとなり、信頼度の高い半導体装
置が得られる。(4) From (1) above, according to the present invention, the capillary 9
Since there is a depression on the pressing surface, bonding on the lead side is a two-point bonding, and a highly reliable semiconductor device can be obtained.

（５）上記＋１）〜（４）により、本発明によればボン
ディングの信頼度が高い半導体装置をより低度に提供す
ることができるという相乗効果が得られる。(5) According to the above +1) to (4), according to the present invention, a synergistic effect can be obtained in that a semiconductor device with high bonding reliability can be provided at a lower bonding reliability.

以上本発明者によってなされた発明を実施例に基つき具
体的に説明したが、本発明は上記実施例に限定されるも
のではなく、その要旨を逸脱しない範囲で種々変更可能
であることはいうまでもない、たとえば、第８図に示す
ように、超音波ワイヤボンディング装置におけるボンデ
ィングツールであるウェッジ２１に前記実施例同様に窪
み１２を設ければ、第９図に示すように２状の接合部１
４が形成でき、前記実施例同様な効果が得られる。Although the invention made by the present inventor has been specifically explained based on Examples above, the present invention is not limited to the above Examples, and it should be noted that various changes can be made without departing from the gist of the invention. For example, as shown in FIG. 8, if a wedge 21, which is a bonding tool in an ultrasonic wire bonding apparatus, is provided with a recess 12 in the same way as in the embodiment described above, a two-shaped bond can be formed as shown in FIG. Part 1
4 can be formed, and the same effects as in the previous embodiment can be obtained.

〔利用分野〕[Application field]

以上の説明では主として本発明者によってなされた発明
をその背景となった利用分野であるサーモソニックボン
ディング技術に通用した場合について説明したが、それ
に限定されるものではなく、たとえば、熱圧着技術など
に適用できる。In the above explanation, the invention made by the present inventor was mainly applied to thermosonic bonding technology, which is the background application field, but it is not limited to this, and for example, it can be applied to thermosonic bonding technology, etc. Applicable.

本発明は少な（とも接続には適用できる。The present invention can be applied to a small number of connections.

【図面の簡単な説明】[Brief explanation of the drawing]

第１図は本発明の一実施例によるハイブリッドＩＣの一
部を示す断面図、 第２図は同じくワイヤが張られた状態を示す部分的な平
面図、 第３図は同じくワイヤボンディング状態を示すワイヤボ
ンディング装置の概要を示す正面図、第４図は同じくキ
ャピラリの先端部分を示す断面図、 第５図は同じくチップの電極にワイヤを接続する最初の
状態を示す断面図、 第６図は同じくチア・プの電極にワイヤを接続した状態
を示す断面図、 第７図は同じく導体層上にワイヤを接続した状態を示す
断面図、 第８図は本発明の他の実施例によるウェッジの先端部分
を示す断面図、 第９図は同じくウェッジによるボンディング部分を示す
平面図である。 ｌ・・・セラミック板、２・・・配線基板、３・・・チ
ップ、４・・・電極、５・・・リード、６・・・ワイヤ
、７・・・導体層、８・・・接合材、９・・・キャピラ
リ、１０・・・ガイド孔、１１・・・押圧面、１２・・
・窪み、１３・・・リング状接合部、１４・・・接合部
、１５・・・本体、１６・・・ＸＹテーブル、１７・・
・アーム、１８・・・テーブル、１９・・・支軸、２０
　　。 第　　１　　図 第　　２　　図 第　　３　　図 ／デ 第　　４　　図 第　　５　　図 第　　６　　図FIG. 1 is a cross-sectional view showing a part of a hybrid IC according to an embodiment of the present invention, FIG. 2 is a partial plan view showing a wire-strung state, and FIG. 3 is a wire-bonding state. 4 is a sectional view showing the tip of the capillary, 5 is a sectional view showing the initial state of connecting the wire to the electrode of the chip, and 6 is the same. FIG. 7 is a cross-sectional view showing a wire connected to a conductor layer, and FIG. 8 is a tip of a wedge according to another embodiment of the present invention. FIG. 9 is a plan view showing the bonding portion using a wedge. l... Ceramic plate, 2... Wiring board, 3... Chip, 4... Electrode, 5... Lead, 6... Wire, 7... Conductor layer, 8... Bonding Material, 9... Capillary, 10... Guide hole, 11... Pressing surface, 12...
- Hollow, 13... Ring-shaped joint, 14... Joint, 15... Main body, 16... XY table, 17...
・Arm, 18...Table, 19...Spindle, 20
. Figure 1 Figure 2 Figure 3/D Figure 4 Figure 5 Figure 6

Claims (1)

【特許請求の範囲】 １、チップと、このチップの周辺に内端を臨ませるリー
ドと、前記チップの電極とリード内端とを接続するワイ
ヤと、を有する半導体装置であって、前記電極およびリ
ードとワイヤとの接続部分は多条の圧着部を有している
ことを特徴とする半導体装置。 ２、ワイヤを保持したボンディングツールでボンディン
グ位置にワイヤを押し付けて擦り付け、第１ボンディン
グ位置と第２ボンディング位置とをワイヤで電気的に接
続するワイヤボンディング装置におけるボンディングツ
ールであって、前記ボンディングツールのワイヤを圧着
する圧着面には窪みが設けられていることを特徴とする
ボンディングツール。 ３、前記窪みはワイヤを繰り出すガイド孔の外周に同心
円的に溝条となって設けられていることを特徴とする特
許請求の範囲第２項記載のボンディングツール。 ４、前記窪みはボンディングツールの平坦な圧着面に設
けられていることを特徴とする特許請求の範囲第１項ま
たは第２項記載のボンディングツール。[Claims] 1. A semiconductor device comprising a chip, a lead whose inner end faces the periphery of the chip, and a wire connecting the electrode of the chip and the inner end of the lead, the electrode and A semiconductor device characterized in that a connection portion between a lead and a wire has a multi-striped crimping portion. 2. A bonding tool in a wire bonding apparatus that presses and rubs a wire against a bonding position with a bonding tool holding a wire to electrically connect a first bonding position and a second bonding position with a wire, the bonding tool comprising: A bonding tool characterized in that a crimping surface for crimping a wire is provided with a depression. 3. The bonding tool according to claim 2, wherein the depression is provided in the form of a groove concentrically around the outer periphery of the guide hole through which the wire is fed out. 4. The bonding tool according to claim 1 or 2, wherein the recess is provided on a flat crimping surface of the bonding tool.
JP59199579A 1984-09-26 1984-09-26 Bonding tool for manufacture of semiconductor device Pending JPS6178128A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP59199579A JPS6178128A (en) 1984-09-26 1984-09-26 Bonding tool for manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59199579A JPS6178128A (en) 1984-09-26 1984-09-26 Bonding tool for manufacture of semiconductor device

Publications (1)

Publication Number Publication Date
JPS6178128A true JPS6178128A (en) 1986-04-21

Family

ID=16410187

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59199579A Pending JPS6178128A (en) 1984-09-26 1984-09-26 Bonding tool for manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS6178128A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4886200A (en) * 1988-02-08 1989-12-12 Mitsubishi Denki Kabushiki Kaisha Capillary tip for bonding a wire
US5172851A (en) * 1990-09-20 1992-12-22 Matsushita Electronics Corporation Method of forming a bump electrode and manufacturing a resin-encapsulated semiconductor device
US11756919B2 (en) 2018-02-07 2023-09-12 Mitsubishi Electric Corporation Wedge tool, bonding device, and bonding inspection method

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4886200A (en) * 1988-02-08 1989-12-12 Mitsubishi Denki Kabushiki Kaisha Capillary tip for bonding a wire
US5172851A (en) * 1990-09-20 1992-12-22 Matsushita Electronics Corporation Method of forming a bump electrode and manufacturing a resin-encapsulated semiconductor device
US11756919B2 (en) 2018-02-07 2023-09-12 Mitsubishi Electric Corporation Wedge tool, bonding device, and bonding inspection method

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