JPH10256299A - Wire-bonding method and device thereof - Google Patents

Wire-bonding method and device thereof

Info

Publication number
JPH10256299A
JPH10256299A JP9059526A JP5952697A JPH10256299A JP H10256299 A JPH10256299 A JP H10256299A JP 9059526 A JP9059526 A JP 9059526A JP 5952697 A JP5952697 A JP 5952697A JP H10256299 A JPH10256299 A JP H10256299A
Authority
JP
Japan
Prior art keywords
wire
bonding
hole
capillary
suction
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP9059526A
Other languages
Japanese (ja)
Inventor
Shigeo Sasaki
栄夫 佐々木
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP9059526A priority Critical patent/JPH10256299A/en
Publication of JPH10256299A publication Critical patent/JPH10256299A/en
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/74Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies
    • H01L24/78Apparatus for connecting with wire connectors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/44Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001Core members of the connector
    • H01L2224/45099Material
    • H01L2224/451Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144Gold (Au) as principal constituent
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481Disposition
    • H01L2224/48151Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484Connecting portions
    • H01L2224/4847Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/78Apparatus for connecting with wire connectors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/78Apparatus for connecting with wire connectors
    • H01L2224/7825Means for applying energy, e.g. heating means
    • H01L2224/783Means for applying energy, e.g. heating means by means of pressure
    • H01L2224/78301Capillary
    • H01L2224/78302Shape
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/78Apparatus for connecting with wire connectors
    • H01L2224/7825Means for applying energy, e.g. heating means
    • H01L2224/783Means for applying energy, e.g. heating means by means of pressure
    • H01L2224/78313Wedge
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/78Apparatus for connecting with wire connectors
    • H01L2224/7825Means for applying energy, e.g. heating means
    • H01L2224/783Means for applying energy, e.g. heating means by means of pressure
    • H01L2224/78313Wedge
    • H01L2224/78314Shape
    • H01L2224/78317Shape of other portions
    • H01L2224/78318Shape of other portions inside the capillary
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/78Apparatus for connecting with wire connectors
    • H01L2224/787Means for aligning
    • H01L2224/78743Suction holding means
    • H01L2224/78745Suction holding means in the upper part of the bonding apparatus, e.g. in the capillary or wedge
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01004Beryllium [Be]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10Details of semiconductor or other solid state devices to be connected
    • H01L2924/11Device type
    • H01L2924/14Integrated circuits

Abstract

PROBLEM TO BE SOLVED: To prevent overlap of minute faces to be connected by positioning a bonding wire in a prescribed direction by a suction or spray operation by a hole communicated with the almost central part of a capillary press-fitting face and press-fitting and connecting the wire to the connected part. SOLUTION: The tip part of a bonding wire 3 which is inserted and supplied through a wire passing hole 2 is sucked and acquired by a press-fitting face 4 of a main body 1 by the suction operation of a suction hole 8 in the capillary main body 1. Since the suction hole 8 opens to the almost central part of the press-fitting face 4, it is sucked and acquired along the supply extension line of the wire 3 by the suction operation of the suction hole 8. Even if the direction of the wire 3 which is inserted and supplied through the passing hole 2 is shifted slightly, it is forcibly sucked and acquired along the almost central line of the press-fitting face 4, and it is press-fitted and connected on the connected part face. Thus, shorting by a wire bonding between the adjacent connected parts can be avoided completely.

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【0001】[0001]

【発明の属する技術分野】本発明は、ワイヤボンディン
グ方法およびワイヤボンディング装置の改良に関する。
The present invention relates to a wire bonding method and a wire bonding apparatus.

【0002】[0002]

【従来の技術】リードフレームもしくは配線基板面に、
IC素子などの半導体チップを搭載・実装して構成される
半導体装置は、電子部品ないし回路素子として広く実用
に供されている。そして、この種半導体装置の構成にお
いては、リードフレームや配線基板の所定位置に、半導
体チップをマウントするとともに、一方では、前記半導
体チップをマウントする領域周辺に予め配置・形設され
ているボンディングパッド面と、半導体チップ面の電極
端子との間を、Al線もしくはAu線でボンディング(接
続)している。
2. Description of the Related Art On a lead frame or wiring board surface,
2. Description of the Related Art A semiconductor device configured by mounting and mounting a semiconductor chip such as an IC element is widely and practically used as an electronic component or a circuit element. In the structure of this type of semiconductor device, a semiconductor chip is mounted at a predetermined position on a lead frame or a wiring board, and, on the other hand, bonding pads previously arranged and formed around a region where the semiconductor chip is mounted. The surface and the electrode terminals on the semiconductor chip surface are bonded (connected) with an Al wire or an Au wire.

【0003】すなわち、予め、所定領域面にマウント剤
などを塗布・被着したリードフレームや配線基板に、た
とえばIC素子などの半導体チップをマウントする一方、
ボンディングステージ面に載置・固定する。次いで、い
わゆるボンディング装置のボンディングツール(キャピ
ラリー)の動作によって、ボンディングワイヤの供給・
位置決めを行うとともに、キャピラリーの圧着面でボン
ディングワイヤを被接続面に圧着(圧接)・切断する。
この圧着・切断の反復的な動作によって、前記リードフ
レームや配線基板のボンディングパッドと、対応する半
導体チップの電極端子との間を、ワイヤボンディングし
て電気的な接続を行っている。
That is, a semiconductor chip such as an IC element is mounted on a lead frame or a wiring board in which a mounting agent or the like is previously applied to and adhered to a predetermined area surface.
Place and fix on the bonding stage surface. Then, by the operation of the bonding tool (capillary) of the so-called bonding apparatus, the supply of the bonding wire
Positioning is performed, and the bonding wire is pressed (pressed) and cut on the surface to be connected on the crimping surface of the capillary.
By the repetitive operation of the pressure bonding / cutting, wire bonding is performed between the bonding pads of the lead frame or the wiring board and the corresponding electrode terminals of the semiconductor chip to perform electrical connection.

【0004】なお、図5 (a)は、上記ワイヤボンディン
グに使用されているキャピラリーの圧着面側の構成を示
す斜視図、図5 (b)は、ワイヤボンディングの態様を模
式的に示す斜視図である。図5 (a), (b)において、1
はキャピラリー本体、2は前記キャピラリー本体1に設
けられ、ボンディングワイヤ3をガイドするワイヤ通り
孔、4は前記ワイヤ通り孔2を介して供給されるボンデ
ィングワイヤ3を被接続面に、キャピラリー本体1の荷
重および超音波(もしくは加熱)により圧着する圧着面
である。ここで、キャピラリー本体1の圧着面4は、ボ
ンディングワイヤ3を被接続面に折り曲げ圧着するとと
もに、ボンディングワイヤ3をクランプして供給側4aで
切断する。
FIG. 5A is a perspective view showing the configuration of the capillary used for the wire bonding on the crimping surface side, and FIG. 5B is a perspective view schematically showing the mode of wire bonding. It is. In FIGS. 5 (a) and 5 (b), 1
Is a capillary main body, 2 is provided in the capillary main body 1, and a wire passage hole for guiding the bonding wire 3, and 4 is a bonding surface of the capillary body 1 to which the bonding wire 3 supplied through the wire passage hole 2 is connected. This is a crimping surface to be crimped by a load and ultrasonic waves (or heating). Here, the crimping surface 4 of the capillary body 1 bends and bonds the bonding wire 3 to the surface to be connected, clamps the bonding wire 3 and cuts it at the supply side 4a.

【0005】[0005]

【発明が解決しようとする課題】しかしながら、上記ワ
イヤボンディング手段においては、実用上次のような問
題がある。すなわち、上記ワイヤボンディングは、図6
(a)〜 (f)に、その実施態様を模式的に示すごとく行わ
れている。先ず、図6 (a)に側面的に示すように、たと
えば配線基板5面に、半導体チップ6のマウント後、そ
の半導体チップ6の電極パッド6a(被接続面)に対し
て、ワイヤボンディング装置を駆動し、キャピラリー本
体1の圧着面4を位置決めする。そして、一方では、ク
ランプ7によってボンディングワイヤ3をクランプした
状態で、ワイヤ通り孔2をガイド・供給されるボンディ
ングワイヤ3の先端部をキャピラリー本体1の荷重およ
び超音波(もしくは加熱)によって電極パッド6a面に圧
着する。
However, the above-mentioned wire bonding means has the following practical problems. That is, the wire bonding is performed in accordance with FIG.
In (a) to (f), the embodiment is performed as schematically shown. First, as shown in a side view in FIG. 6A, after mounting a semiconductor chip 6 on, for example, a wiring board 5, a wire bonding apparatus is applied to an electrode pad 6a (a surface to be connected) of the semiconductor chip 6. It drives and positions the crimping surface 4 of the capillary main body 1. On the other hand, in a state where the bonding wire 3 is clamped by the clamp 7, the tip of the bonding wire 3 guided / supplied through the through-hole 2 is applied to the electrode pad 6 a by the load of the capillary body 1 and ultrasonic waves (or heating). Crimp on the surface.

【0006】次いで、キャピラリー本体1を配線基板5
面の接続パッド5a(被接続面)に移動させ、キャピラリ
ー本体1の圧着面4を接続パッド5aに位置決めする、一
方、クランプ7によってボンディングワイヤ3をクラン
プした状態で、ワイヤ通り孔2をガイド・供給されるボ
ンディングワイヤ3をキャピラリー本体1の荷重および
超音波(もしくは加熱)によって接続パッド5a面に圧着
する。
Next, the capillary body 1 is connected to the wiring board 5.
Is moved to the connection pad 5a (the surface to be connected), and the crimping surface 4 of the capillary body 1 is positioned on the connection pad 5a. On the other hand, while the bonding wire 3 is clamped by the clamp 7, the wire passing hole 2 is guided and guided. The supplied bonding wire 3 is pressed against the surface of the connection pad 5a by the load of the capillary body 1 and ultrasonic waves (or heating).

【0007】その後、図6 (b)に側面的に示すように、
接続パッド5a面に圧着・接続したボンディングワイヤ3
を切り離し、図6 (c)に側面的に示すように、ボンディ
ングワイヤ3の切断端部をキャピラリー本体1の圧着面
4側に繰出し供給する一方、そのキャピラリー本体1の
圧着面4を、前記半導体チップ6の他の電極パッド6aに
位置合わせして圧着する工程などを繰り返している。
After that, as shown in FIG.
Bonding wire 3 crimped and connected to connection pad 5a surface
6C, the cut end of the bonding wire 3 is fed out to the crimping surface 4 side of the capillary body 1, and the crimping surface 4 of the capillary body 1 is connected to the semiconductor as shown in FIG. The step of aligning the chip 6 with another electrode pad 6a and crimping the chip is repeated.

【0008】ところで、前記接続パッド5a面に圧着・接
続・切り離し後、ボンディングワイヤ3の切断端部をキ
ャピラリー本体1の圧着面4側に繰出し供給したとき、
そのボンディングワイヤ3の切断端(先端)部が、図6
(d)に平面的に示すように、キャピラリー本体1の圧着
面4中央部に位置していればよいが、図6 (e), (f)に
それぞれ平面的に示すように、位置ズレする場合がしば
しば起こる。ここで、被接続面5a,6aに位置ズレのまま
圧着すると、圧着部の異常変形や被接続面5a,6aからの
食み出し・接続などを発生するため、被接続面5a,6aの
微細化もしくは微小化などにおいて問題になる。つま
り、半導体チップなどの小形化や高容量化に伴う被接続
面5a,6aの微小化、狭ピッチ化などにおいては、接続の
信頼性が損なわれる恐れがあり、十分に対応できる手段
とはいえない。
When the cut end of the bonding wire 3 is fed out to the crimping surface 4 side of the capillary body 1 after crimping, connecting and disconnecting the connection pad 5a,
The cut end (tip) of the bonding wire 3 is shown in FIG.
As shown in the plan view of FIG. 6D, it is sufficient that the capillary body 1 is located at the center of the crimping surface 4 of the capillary body 1. However, as shown in plan views of FIGS. Cases often happen. If the crimping is performed on the connected surfaces 5a and 6a while the positions are misaligned, abnormal deformation of the crimped portion and protrusion or connection from the connected surfaces 5a and 6a may occur. It becomes a problem in miniaturization or miniaturization. In other words, when the connected surfaces 5a and 6a are miniaturized and the pitch is reduced due to the miniaturization and high capacity of the semiconductor chip or the like, the reliability of the connection may be impaired. Absent.

【0009】本発明はこのような事情に対処してなされ
たもので、量産的で、かつ信頼性の高い半導体装置の構
成が可能なワイヤボンディング方法およびワイヤボンデ
ィング装置の提供を目的とする。
The present invention has been made in view of such circumstances, and has as its object to provide a wire bonding method and a wire bonding apparatus capable of mass-producing a highly reliable semiconductor device.

【0010】[0010]

【課題を解決するための手段】請求項1の発明は、ワイ
ヤ通り孔を介してボンディングワイヤを被接続面に供給
する工程と、前記被接続面に供給されたボンディングワ
イヤを圧着面のほぼ中央に連通する孔の吸引・吸着もし
くは気体吹き付け作用で位置決めする工程と、前記位置
決めされたボンディングワイヤを被接続面に圧着する工
程とを有することを特徴とするワイヤボンディング方法
である。
According to a first aspect of the present invention, there is provided a method for supplying a bonding wire to a surface to be connected through a wire-passing hole, and bonding the bonding wire supplied to the surface to be connected to substantially the center of the crimping surface. A wire bonding method comprising the steps of: positioning by suction / suction or gas blowing of a hole communicating with a hole; and crimping the positioned bonding wire to a surface to be connected.

【0011】請求項2の発明は、請求項1記載のワイヤ
ボンディング方法において、ボンディングワイヤを位置
決めする工程は、ボンディングワイヤの強度によって吸
引・吸着もしくは気体吹き付けの強度を最適化して行う
ことを特徴とする。
According to a second aspect of the present invention, in the wire bonding method of the first aspect, the step of positioning the bonding wire is performed by optimizing the strength of suction / suction or gas blowing depending on the strength of the bonding wire. I do.

【0012】請求項3の発明は、ボンディングワイヤを
ガイドするワイヤ通り孔と、前記ワイヤ通り孔を介して
供給されるボンディングワイヤを被接続面に圧着する圧
着面と、前記圧着面のほぼ中央部に連通し、かつボンデ
ィングワイヤを吸着もしくは吹き付けする孔とを備えた
キャピラリーを有することを特徴とするワイヤボンディ
ング装置である。
According to a third aspect of the present invention, there is provided a wire through hole for guiding a bonding wire, a crimping surface for crimping a bonding wire supplied through the wire through hole to a surface to be connected, and a substantially central portion of the crimping surface. And a hole provided with a hole for adsorbing or blowing a bonding wire.

【0013】請求項4の発明は、請求項3記載のワイヤ
ボンディング装置において、キャピラリーのボンディン
グワイヤを吸着もしくは吹き付けする孔は、ワイヤ通り
孔を介して供給されるボンディングワイヤの延長方向に
対し、所定の長さを有することを特徴とする。
According to a fourth aspect of the present invention, in the wire bonding apparatus according to the third aspect, the hole for sucking or blowing the bonding wire of the capillary is provided in a predetermined direction with respect to the extending direction of the bonding wire supplied through the wire passage hole. Having a length of

【0014】上記発明において、ボンディングワイヤを
吸引・吸着する孔の開口は、ボンディングワイヤを十分
に吸着する程度の大きさでよく、また、その開口面形状
は、円形、楕円形、角型、菱形などのいずれでもよい
が、なるべくボンディングワイヤが延出・供給される線
に沿った長楕円形や長方形などが好ましい。さらに、前
記開口面に接続する吸引孔もしくは気体吹き出し孔は、
キャピラリー本体の軸方向に沿って延設されていてもよ
いし、あるいはキャピラリー本体の側面側に導出した構
成を採ってもよい。
In the above invention, the opening of the hole for sucking / sucking the bonding wire may have a size enough to sufficiently suck the bonding wire, and the opening shape thereof is circular, elliptical, square, or rhombic. Any of these may be used, but an elliptical shape, a rectangular shape, or the like along a line through which the bonding wire is extended and supplied is preferable. Further, a suction hole or a gas blowing hole connected to the opening surface,
It may be extended along the axial direction of the capillary main body, or may be configured to be led out to the side of the capillary main body.

【0015】請求項1および2の発明では、キャピラリ
ー圧着面のほぼ中央部に連通する孔によって、ボンディ
ングワイヤが一定の方向に吸着もしくは吹き付け・位置
決めされて、被接続部に圧着・接続するため、微小な被
接続面に対して食み出しなどを招来することなく、容易
に、所要のワイヤボンディングを行うことができる。す
なわち、微細なピッチで、かつ微小な電極パッドや接続
パッドを対象にして、信頼性の高い電気的な接続を常
時、かつ量産的に行うことができる。
According to the first and second aspects of the present invention, since the bonding wire is sucked or blown and positioned in a certain direction by the hole communicating with the substantially central portion of the capillary crimping surface, and is crimped and connected to the portion to be connected. Necessary wire bonding can be easily performed without causing protrusion or the like to a minute connected surface. That is, highly reliable electrical connection can be performed constantly and mass-produced with a fine pitch and for a fine electrode pad or connection pad.

【0016】請求項3および4の発明では、微細なピッ
チで、かつ微小な電極パッドや接続パッドを対象に、信
頼性の高い電気的な接続が可能となることに伴って、歩
留まりよく、半導体装置などを量産することができる。
According to the third and fourth aspects of the present invention, a highly reliable electrical connection can be made to a fine pitch and a fine electrode pad or connection pad, and the semiconductor device can be manufactured with high yield. Equipment can be mass-produced.

【0017】[0017]

【発明の実施の形態】以下、図1 (a)〜 (c)、図2
(a), (b)、図3および図4を参照して本発明を説明す
る。
DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, FIGS. 1A to 1C and FIG.
The present invention will be described with reference to (a) and (b) and FIGS.

【0018】図1 (a)〜 (c)は、一実施例に係るワイヤ
ボンディング装置が具備するキャピラリーの要部構成を
示すもので、図1 (a)は正面図、図1 (b)は圧着面側の
構成を示す斜視図、図1 (c)は、ボンディングワイヤの
供給態様を模式的に示す斜視図である。図1 (a)〜 (c)
において、1はキャピラリー本体、2は前記キャピラリ
ー本体1に設けられ、直径20〜 100μm 程度のボンディ
ングワイヤ3(たとえばAu線,Al線)をガイドする直径
50〜 150μm 程度のワイヤ通り孔である。また、4は前
記ワイヤ通り孔2を介して供給されるボンディングワイ
ヤ3を被接続面に、キャピラリー本体1の荷重および超
音波(もしくは加熱)により圧着する圧着面、8は一端
が前記キャピラリー本体圧着面4のほぼ中央部に、他端
が真空系(もしくは減圧系)に連通する直径20〜 150μ
m 程度の吸引孔である。
FIGS. 1 (a) to 1 (c) show a main part of a capillary provided in a wire bonding apparatus according to one embodiment. FIG. 1 (a) is a front view, and FIG. FIG. 1 (c) is a perspective view schematically showing a configuration of the crimping surface side, and FIG. 1 (c) is a perspective view schematically showing a bonding wire supply mode. Fig. 1 (a)-(c)
In the figure, reference numeral 1 denotes a capillary main body, 2 denotes a diameter provided on the capillary main body 1 and guides a bonding wire 3 (for example, an Au wire or an Al wire) having a diameter of about 20 to 100 μm.
It is a through-hole of about 50 to 150 μm. Reference numeral 4 denotes a crimping surface for press-bonding the bonding wire 3 supplied through the wire-through hole 2 to the surface to be connected by the load of the capillary body 1 and ultrasonic (or heating), and 8 denotes one end of the crimping of the capillary body. At the approximate center of the surface 4, the other end communicates with a vacuum system (or a reduced pressure system) with a diameter of 20 to 150μ
The suction hole is about m.

【0019】ここで、キャピラリー本体1の圧着面4
は、前記吸引孔8の真空吸着作用によって、供給された
ボンディングワイヤ3を一定の方向に、吸着・位置決め
補足するとともに、ボンディングワイヤ3をクランプし
た後に、被接続面に折り曲げ圧着し、要すれば、ボンデ
ィングワイヤ3を供給側4aで切断する作用を有する。
Here, the crimping surface 4 of the capillary body 1
Is to suck and position the supplied bonding wire 3 in a certain direction by the vacuum suction action of the suction hole 8 and, after clamping the bonding wire 3, bend and press-bond it to the surface to be connected. Has the function of cutting the bonding wire 3 on the supply side 4a.

【0020】次に、上記キャピラリー(ボンディングヘ
ッド)を具備したワイヤボンディング装置によるワイヤ
ボンディング例を説明する。
Next, an example of wire bonding by a wire bonding apparatus having the above-mentioned capillary (bonding head) will be described.

【0021】図2 (a), (b)は、たとえば半導体チップ
の電極パッド面に、Au線をワイヤボンディングする実施
態様を模式的にしめすもので、先ず、キャピラリー本体
1の圧着面4に、ワイヤ通り孔2を挿通・供給されたAu
線3の先端部は、キャピラリー本体1の吸引孔8の吸引
作用によって、キャピラリー本体1の圧着面4に吸引・
補足される。このとき、吸引孔8は、キャピラリー本体
1の圧着面4のほぼ中央部に開口しているため、吸引孔
8の吸引作用によって、Au線3の供給延長線に沿って吸
引・補足される。
FIGS. 2A and 2B schematically show an embodiment in which an Au wire is wire-bonded to an electrode pad surface of a semiconductor chip, for example. Au inserted and supplied through wire hole 2
The distal end of the wire 3 is attracted to the crimping surface 4 of the capillary body 1 by the suction action of the suction hole 8 of the capillary body 1.
Supplemented. At this time, since the suction hole 8 is opened substantially at the center of the crimping surface 4 of the capillary body 1, the suction operation of the suction hole 8 causes the suction and supplement along the supply extension line of the Au wire 3.

【0022】つまり、ワイヤ通り孔2を挿通・供給され
たAu線3の方向が若干ズレていても、図3に平面的に示
すごとく、キャピラリー本体1の圧着面4のほぼ中央線
に沿って強制的に吸引・補足されて、被接続部5a,6a面
に圧着・接続されることになる。このように、位置ズレ
など起こさずAu線3を被接続部5a,6a面に圧着・接続で
きので、隣接する被接続部5aもしくは6a同士間のワイヤ
ボンディングによる短絡が全面的に回避・解消される。
That is, even if the direction of the Au wire 3 inserted / supplied through the hole 2 through the wire is slightly shifted, as shown in a plan view in FIG. It is forcibly sucked / supplemented and crimped / connected to the surfaces to be connected 5a and 6a. As described above, the Au wire 3 can be crimped and connected to the surfaces of the connected portions 5a and 6a without causing a displacement or the like, so that a short circuit due to wire bonding between the adjacent connected portions 5a or 6a can be completely avoided or eliminated. You.

【0023】このワイヤボンディングによる被接続部5a
もしくは6a同士の短絡が、全面的に回避・解消されるこ
とは、信頼性の高い半導体装置の提供、信頼性の高い半
導体装置の歩留まり向上や生産性の向上となり、特に、
被接続部5a,6a面の微小化や被接続部5a,6aの微小ピッ
チ化においては、大きな利点をもたらすことになる。た
とえば、位置ズレ(尻振り)による短絡などの不良率発
生、微細化による多被接続部化について、従来のワイヤ
ボンディング方法(もしくはワイヤボンディング装置)
によるワイヤボンディング、この発明に係るワイヤボン
ディング方法(もしくはワイヤボンディング装置)によ
るワイヤボンディングを対比したところ、表1および表
2にそれぞれ示すごとくであった。
The connected part 5a by this wire bonding
Or that the short circuit between 6a is completely avoided or eliminated, providing a highly reliable semiconductor device, improving the yield and productivity of the highly reliable semiconductor device, and in particular,
A great advantage is brought about in the miniaturization of the surfaces of the connected parts 5a and 6a and the fine pitch of the connected parts 5a and 6a. For example, a conventional wire bonding method (or a wire bonding apparatus) is used for the generation of a defective rate such as a short circuit due to a positional shift (tail swing) and for a large number of connected parts due to miniaturization.
Table 1 and Table 2 show the comparison between the wire bonding according to the present invention and the wire bonding according to the wire bonding method (or the wire bonding apparatus) according to the present invention.

【0024】 図4は、上記結果を曲線で示したもので、位置ズレ(尻
振り)による短絡などの不良率発生を曲線A(実施例)
および曲線a(従来例)で、また、微細化による多被接
続部化を曲線B(実施例)および曲線b(従来例)でそ
れぞれ示す。
[0024] FIG. 4 shows the above results in a curve, and shows the occurrence of a defective rate such as a short circuit due to a displacement (tail swing) by a curve A (Example).
And a curve a (conventional example), and a curve B (example) and a curve b (conventional example) respectively show the formation of multiple connected parts by miniaturization.

【0025】本発明は、上記実施例に限定されるもので
なく、発明の趣旨を逸脱しない範囲で、いろいろの変形
を採ることができる。たとえば被接続部面サイズや被接
続部のピッチ、あるいはボンディングワイヤの材質をAu
からAlに変えても同様な作用・効果がえられる。
The present invention is not limited to the above embodiment, and various modifications can be made without departing from the spirit of the invention. For example, the surface size of the connected part, the pitch of the connected part, or the material of the bonding wire is Au.
Similar functions and effects can be obtained by changing from Al to Al.

【0026】なお、上記ワイヤボンディング装置の構成
において、一端がキャピラリー本体圧着面4のほぼ中央
部に円形に開口し、他端が空気圧縮系に連通する直径20
〜 100μm 程度の空気吹き出し孔とした以外は、同様の
構成とした場合も、同様に精度よく信頼性の高いワイヤ
ボンディングが可能であった。つまり、この実施形態で
は、吹き出される空気のベルヌーイ作用によって、キャ
ピラリー本体圧着面4に供給・導出されたボンディング
ワイヤが空気吹き出し開口の中心部に吸い寄せられ、所
定位置に容易にボンディングすることができる。
In the configuration of the wire bonding apparatus, one end has a circular opening substantially at the center of the crimping surface 4 of the capillary body, and the other end has a diameter of 20 mm communicating with the air compression system.
Except for using an air blowout hole of about 100 μm, even when the same configuration was adopted, highly accurate and highly reliable wire bonding was possible. That is, in this embodiment, the bonding wire supplied and led out to the capillary main body crimping surface 4 is attracted to the center of the air blowing opening by the Bernoulli action of the blown air, and can be easily bonded to a predetermined position. .

【0027】[0027]

【発明の効果】請求項1の本発明によれば、微小な被接
続面に対してはみ出しなどを招来することなく、容易
に、所要のワイヤボンディングを行うことができる。す
なわち、微細なピッチ、微小な電極パッドや接続パッド
などを対象にし、信頼性の高い電気的な接続を容易に、
かつ量産的に行うことができる。
According to the first aspect of the present invention, required wire bonding can be easily performed without incurring protrusion or the like to a minute connected surface. In other words, a highly reliable electrical connection can be easily performed with a fine pitch, fine electrode pads and connection pads, etc.
And it can be performed in mass production.

【0028】請求項2の発明によれば、微細なピッチ、
微小な電極パッドや接続パッドなどを対象にし、信頼性
の高い電気的な接続などが容易に行われるため、歩留ま
りよく、高性能の半導体装置などを量産できる。
According to the second aspect of the present invention, fine pitch,
Since highly reliable electrical connection or the like is easily performed for minute electrode pads or connection pads, high-performance semiconductor devices with high yield can be mass-produced.

【図面の簡単な説明】[Brief description of the drawings]

【図1】この発明に係るワイヤボンディング装置が具備
するキャピラリーの要部構成例を示すもので、 (a)は正
面図、 (b)は斜視図、 (c)はボンディングワイヤを供給
する態様を示す斜視図。
FIG. 1 shows an example of a configuration of a main part of a capillary provided in a wire bonding apparatus according to the present invention, wherein (a) is a front view, (b) is a perspective view, and (c) is a mode in which a bonding wire is supplied. FIG.

【図2】図1に図示したキャピラリーによるワイヤボン
ディング方法の実施態様例を模式的に示すもので、 (a)
はボンディングワイヤの供給開始時の状態を示す側面
図、 (b)はボンディングワイヤの先端部を圧着面に吸引
補足する状態を示す側面図。
FIG. 2 schematically shows an embodiment of the wire bonding method using the capillary shown in FIG. 1;
FIG. 4B is a side view showing a state at the time of starting the supply of the bonding wire, and FIG. 4B is a side view showing a state in which the tip end of the bonding wire is suction-supplied to the crimping surface.

【図3】図1に図示したキャピラリーの圧着面にボンデ
ィングワイヤの先端部を吸引補足した状態を示す平面
図。
FIG. 3 is a plan view showing a state in which a tip end of a bonding wire is suction-supplied to a crimping surface of the capillary shown in FIG. 1;

【図4】この発明に係るワイヤボンディング方法および
従来のワイヤボンディング方法による被接続部サイズと
接続不良発生率の関係、被接続部サイズとピッチとの関
係をされぞれ示す特性図。
FIG. 4 is a characteristic diagram showing a relationship between a connection portion size and a connection failure occurrence rate and a relationship between a connection portion size and a pitch by the wire bonding method according to the present invention and the conventional wire bonding method, respectively.

【図5】従来のワイヤボンディング装置が具備するキャ
ピラリーの要部構成を示すもので、 (a)は斜視図、 (b)
はボンディングワイヤを供給する態様を示す斜視図。
FIGS. 5A and 5B show a main configuration of a capillary provided in a conventional wire bonding apparatus, wherein FIG. 5A is a perspective view, and FIG.
FIG. 3 is a perspective view showing a mode of supplying a bonding wire.

【図6】従来のワイヤボンディング装置による実施態様
を模式的に示すもので、 (a)電極パッド面および接続パ
ッド面にワイヤボンディングする状態の側面図、 (b)は
ボンディングワイヤを圧着後に切断する状態の側面図、
(c)はボンディングワイヤを繰り出す状態の側面図、
(d)は被接続部面にボンディングワイヤ先端部が定位置
に位置合わせされた状態の側面図、 (e)および (f)は被
接続部面にボンディングワイヤ先端部が定位置に位置合
わせされなかった状態の側面図。
FIG. 6 schematically shows an embodiment using a conventional wire bonding apparatus, in which (a) a side view showing a state in which wire bonding is performed on an electrode pad surface and a connection pad surface, and (b) cutting after bonding a bonding wire; Side view of the state,
(c) is a side view of the state in which the bonding wire is extended,
(d) is a side view of the state where the tip of the bonding wire is aligned with the connected part surface in a fixed position, and (e) and (f) are the positions where the tip of the bonding wire is aligned with a fixed position on the connected part surface. The side view of the state which did not exist.

【符号の説明】[Explanation of symbols]

1……キャピラリー本体 2……ワイヤ通り孔(ガイド孔) 3……ボンディングワイヤ 4……圧着面 4a……ボンディングワイヤ供給側 5……配線基板 5a……接続パッド 6……半導体チップ 6a……電極パッド 7……クランプ 8……吸着孔 DESCRIPTION OF SYMBOLS 1 ... Capillary main body 2 ... Wire through hole (guide hole) 3 ... Bonding wire 4 ... Crimp surface 4a ... Bonding wire supply side 5 ... Wiring board 5a ... Connection pad 6 ... Semiconductor chip 6a ... Electrode pad 7 ... Clamp 8 ... Suction hole

Claims (4)

【特許請求の範囲】[Claims] 【請求項1】 ワイヤ通り孔を介してボンディングワイ
ヤを被接続面に供給する工程と、 前記被接続面に供給されたボンディングワイヤを圧着面
のほぼ中央に連通する孔の吸引・吸着もしくは気体吹き
付け作用で位置決めする工程と、 前記位置決めされたボンディングワイヤを被接続面に圧
着する工程とを有することを特徴とするワイヤボンディ
ング方法。
1. A step of supplying a bonding wire to a surface to be connected through a wire passing hole, and suctioning / adsorbing or blowing a gas through a hole communicating the bonding wire supplied to the surface to be connected to substantially the center of the crimping surface. A wire bonding method, comprising: positioning by an action; and crimping the positioned bonding wire to a surface to be connected.
【請求項2】 ボンディングワイヤを位置決めする工程
は、ボンディングワイヤの強度によって吸引・吸着もし
くは気体吹き付けの強度を最適化して行うことを特徴と
する請求項1記載のワイヤボンディング方法。
2. The wire bonding method according to claim 1, wherein the step of positioning the bonding wire is performed by optimizing the strength of suction / suction or gas blowing depending on the strength of the bonding wire.
【請求項3】 ボンディングワイヤをガイドするワイヤ
通り孔と、 前記ワイヤ通り孔を介して供給されるボンディングワイ
ヤを被接続面に圧着する圧着面と、 前記圧着面のほぼ中央部に連通し、かつボンディングワ
イヤを吸着もしくは吹き付けする孔とを備えたキャピラ
リーを有することを特徴とするワイヤボンディング装
置。
3. A wire passing hole for guiding a bonding wire, a crimping surface for crimping a bonding wire supplied through the wire passing hole to a surface to be connected, and a substantially central portion of the crimping surface, and A wire bonding apparatus comprising: a capillary having a hole for sucking or blowing a bonding wire.
【請求項4】 キャピラリーのボンディングワイヤを吸
着もしくは吹き付けする孔は、ワイヤ通り孔を介して供
給されるボンディングワイヤの延長方向に対し、所定の
長さを有することを特徴とする請求項3記載のワイヤボ
ンディング装置。
4. The capillary according to claim 3, wherein the hole for sucking or blowing the bonding wire of the capillary has a predetermined length in the extending direction of the bonding wire supplied through the wire passage hole. Wire bonding equipment.
JP9059526A 1997-03-13 1997-03-13 Wire-bonding method and device thereof Pending JPH10256299A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP9059526A JPH10256299A (en) 1997-03-13 1997-03-13 Wire-bonding method and device thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9059526A JPH10256299A (en) 1997-03-13 1997-03-13 Wire-bonding method and device thereof

Publications (1)

Publication Number Publication Date
JPH10256299A true JPH10256299A (en) 1998-09-25

Family

ID=13115818

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9059526A Pending JPH10256299A (en) 1997-03-13 1997-03-13 Wire-bonding method and device thereof

Country Status (1)

Country Link
JP (1) JPH10256299A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6564989B2 (en) 2000-08-22 2003-05-20 Mitsubishi Denki Kabushiki Kaisha Wire bonding method and wire bonding apparatus
JP2015056426A (en) * 2013-09-10 2015-03-23 株式会社東芝 Bonding tool, bonding device, and semiconductor device
JP6138332B1 (en) * 2016-12-22 2017-05-31 ハイソル株式会社 Vacuum transfer method
JP7263633B1 (en) * 2022-06-10 2023-04-24 株式会社カイジョー Wiring device

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6564989B2 (en) 2000-08-22 2003-05-20 Mitsubishi Denki Kabushiki Kaisha Wire bonding method and wire bonding apparatus
JP2015056426A (en) * 2013-09-10 2015-03-23 株式会社東芝 Bonding tool, bonding device, and semiconductor device
JP6138332B1 (en) * 2016-12-22 2017-05-31 ハイソル株式会社 Vacuum transfer method
JP2018107195A (en) * 2016-12-22 2018-07-05 ハイソル株式会社 Adsorption conveying method
JP7263633B1 (en) * 2022-06-10 2023-04-24 株式会社カイジョー Wiring device
WO2023238390A1 (en) * 2022-06-10 2023-12-14 株式会社カイジョー Wiring device

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