JP2015056426A - Bonding tool, bonding device, and semiconductor device - Google Patents

Bonding tool, bonding device, and semiconductor device Download PDF

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JP2015056426A
JP2015056426A JP2013187131A JP2013187131A JP2015056426A JP 2015056426 A JP2015056426 A JP 2015056426A JP 2013187131 A JP2013187131 A JP 2013187131A JP 2013187131 A JP2013187131 A JP 2013187131A JP 2015056426 A JP2015056426 A JP 2015056426A
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bonding
wire
terminal
region
pressing
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隆章 赤羽
Takaaki Akabane
隆章 赤羽
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Toshiba Corp
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Toshiba Corp
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Priority to JP2013187131A priority Critical patent/JP2015056426A/en
Priority to TW102146996A priority patent/TWI527137B/en
Priority to CN201310716788.1A priority patent/CN104425311A/en
Publication of JP2015056426A publication Critical patent/JP2015056426A/en
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  • Engineering & Computer Science (AREA)
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  • Wire Bonding (AREA)
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Abstract

PROBLEM TO BE SOLVED: To provide a bonding method or a semiconductor device having a high reliability by suppressing disconnection or peeling of a bonding wire.SOLUTION: A bonding tool includes a terminal 3, a terminal 4, and a bonding wire 5 which includes a connection 11 connected to the terminal 3 and a connection part 12 connected to the terminal 4, for electrically connecting the terminal 3 and the terminal 4. The connection part 11 includes a junction region 31 where a part of the bonding wire 5 is press-fitted, and a junction region 32 where a part of the bonding wire 5 is press-fitted at a position closer to the terminal 12 than to the junction region 31. The thickness of the bonding wire 5 in the junction region 32 is thicker than the thickness of the bonding wire 5 in the junction region 31.

Description

本発明の実施形態は、ボンディング用ツール、ボンディング装置、および半導体装置に関する。   Embodiments described herein relate generally to a bonding tool, a bonding apparatus, and a semiconductor device.

半導体チップと他のチップまたは基板とを電気的に接続する技術としてワイヤボンディングが知られている。ワイヤボンディングは、ボンディング装置を用い、キャピラリ−と呼ばれるボンディング用ツールによりボンディングワイヤを送出しながら、ボンディングワイヤの一端を半導体チップの端子に圧着させ、他端を他のチップまたは基板の端子に圧着させることにより行われる。   Wire bonding is known as a technique for electrically connecting a semiconductor chip to another chip or a substrate. In wire bonding, a bonding tool is used to send a bonding wire with a bonding tool called a capillary, and one end of the bonding wire is crimped to a terminal of a semiconductor chip, and the other end is crimped to a terminal of another chip or a substrate. Is done.

さらに、ワイヤボンディングの一例としてウェッジボンディングが挙げられる。ウェッジボンディングは、ボールボンディングのようにワイヤの先端にボールを形成することなく、ワイヤの先端を超音波により圧着させる方式である。ウェッジボンディングは、ワイヤ先端のボールを熱圧着等により圧着させる方式と比較して低温での圧着が可能である。また、半導体チップ側に異種金属化合物が形成されにくく、また狭ピッチでのワイヤボンディングが可能である等の利点がある。   Furthermore, wedge bonding is an example of wire bonding. Wedge bonding is a method in which the tip of a wire is crimped by ultrasonic waves without forming a ball at the tip of the wire unlike ball bonding. Wedge bonding enables crimping at a low temperature as compared with a method in which a ball at the tip of a wire is crimped by thermocompression bonding or the like. In addition, there is an advantage that a dissimilar metal compound is hardly formed on the semiconductor chip side and wire bonding with a narrow pitch is possible.

ウェッジボンディングでは、ボンディング用ツールを用いてボンディングワイヤの一端を押圧しつつ超音波振動させて端子に圧着させることが好ましい。その後ワイヤの塑性変形を行いボンディングワイヤが他の端子に接続しないように湾曲部を形成することが好ましい。しかしながら、塑性変形時にボンディングワイヤの接続点と湾曲部との間に応力が発生し、ボンディングワイヤが断線または剥離することがある。   In wedge bonding, it is preferable to ultrasonically vibrate one end of the bonding wire using a bonding tool and press it to the terminal. Thereafter, it is preferable to form a curved portion so that the bonding wire is not connected to other terminals by plastic deformation of the wire. However, stress may be generated between the connection point of the bonding wire and the curved portion during plastic deformation, and the bonding wire may be disconnected or peeled off.

特開２０１２−１５２６３号公報JP 2012-15263 A

本発明が解決しようとする課題は、ボンディングワイヤの断線または剥離を抑制するボンディング方法または半導体装置を提供することである。   The problem to be solved by the present invention is to provide a bonding method or a semiconductor device that suppresses disconnection or peeling of a bonding wire.

実施形態のボンディング用ツールは、ボンディングワイヤを長さ方向に順次送出するワイヤ送出部と、ワイヤ送出部から送出されたボンディングワイヤの一部を押圧するワイヤ押圧部と、を備え、ワイヤ押圧部は、第１の凸部と、第１の凸部とワイヤ送出部との間に設けられ、高さが第１の凸部よりも低い第２の凸部と、を有する。   The bonding tool according to the embodiment includes a wire sending portion that sequentially sends bonding wires in the length direction, and a wire pressing portion that presses a part of the bonding wire sent from the wire sending portion, and the wire pressing portion is And a first convex portion, and a second convex portion that is provided between the first convex portion and the wire sending portion and has a height lower than that of the first convex portion.

実施形態のボンディング装置は、ボンディングワイヤを長さ方向に順次送出するワイヤ送出部と前記ワイヤ送出部から送出された前記ボンディングワイヤの一部を押圧するワイヤ押圧部とを備えるボンディング用ツールと、前記ボンディング用ツールの動作を制御する制御部と、を具備し、前記制御部は、前記ボンディング用ツールを移動し、前記ワイヤ送出部から前記ボンディングワイヤの一部を送出して端子上に前記ボンディングワイヤの一部を配置する動作と、前記ワイヤ押圧部により第１の圧力で前記ボンディングワイヤの一部を押圧しつつ超音波振動させて圧着することにより第１の接合領域を形成する動作と、前記ボンディング用ツールを移動し、前記ワイヤ送出部から前記ボンディングワイヤの一部を送出して前記端子の前記第１の接合領域と異なる位置に前記ボンディングワイヤの一部を配置する動作と、前記ワイヤ押圧部により前記第１の圧力よりも低い第２の圧力で前記ボンディングワイヤの一部を押圧しつつ超音波振動させて圧着することにより第２の接合領域を形成する動作と、の実行を制御する。   The bonding apparatus according to the embodiment includes a bonding tool including a wire sending unit that sequentially sends bonding wires in a length direction, and a wire pressing unit that presses a part of the bonding wire sent from the wire sending unit, A control unit that controls the operation of the bonding tool, and the control unit moves the bonding tool, sends a part of the bonding wire from the wire sending unit, and sends the bonding wire onto a terminal. An operation of arranging a part of the bonding wire, an operation of forming a first bonding region by ultrasonically vibrating and pressing a part of the bonding wire while pressing a part of the bonding wire with the first pressure by the wire pressing part, Move the bonding tool, send out a part of the bonding wire from the wire delivery part, and An operation of disposing a part of the bonding wire at a position different from the one bonding region, and an ultrasonic wave while pressing a part of the bonding wire with a second pressure lower than the first pressure by the wire pressing portion. The operation of forming the second bonding region by controlling the vibration and pressure bonding is controlled.

実施形態の半導体装置は、第１の端子と、第２の端子と、前記第１の端子に接続された第１の接続部と前記第２の端子に接続された第２の接続部とを有し、前記第１の端子と前記第２の端子とを電気的に接続するボンディングワイヤと、を具備し、前記第１の接続部は、前記ボンディングワイヤの一部が圧着された第１の接合領域と、前記第１の接合領域よりも前記第２の端子に近い位置に前記ボンディングワイヤの一部が圧着された第２の接合領域と、を有し、前記第２の接合領域における前記ボンディングワイヤの厚さは、前記第１の接合領域における前記ボンディングワイヤの厚さよりも厚い。   The semiconductor device of the embodiment includes a first terminal, a second terminal, a first connection portion connected to the first terminal, and a second connection portion connected to the second terminal. And a bonding wire that electrically connects the first terminal and the second terminal, and the first connection portion includes a first wire to which a part of the bonding wire is crimped. A bonding region; and a second bonding region in which a part of the bonding wire is crimped at a position closer to the second terminal than the first bonding region, and the second bonding region The thickness of the bonding wire is greater than the thickness of the bonding wire in the first bonding region.

第１の実施形態における半導体装置を示す断面図である。It is sectional drawing which shows the semiconductor device in 1st Embodiment. 第１の実施形態における半導体装置の他の例を示す断面図である。It is sectional drawing which shows the other example of the semiconductor device in 1st Embodiment. 第１の実施形態におけるボンディング装置を示す模式図である。It is a schematic diagram which shows the bonding apparatus in 1st Embodiment. 第１の実施形態におけるボンディング装置を用いた半導体装置のボンディングを示す断面図である。It is sectional drawing which shows the bonding of the semiconductor device using the bonding apparatus in 1st Embodiment. 第２の実施形態におけるボンディング用ツールにおける先端部の拡大図である。It is an enlarged view of the front-end | tip part in the tool for bonding in 2nd Embodiment. 第２の実施形態におけるボンディング装置を用いた半導体装置のウェッジボンディングを示す断面図である。It is sectional drawing which shows the wedge bonding of the semiconductor device using the bonding apparatus in 2nd Embodiment.

以下、実施形態の半導体装置について、図面を参照して説明する。   The semiconductor device of the embodiment will be described below with reference to the drawings.

（第１の実施形態）   (First embodiment)

図１（Ａ）は、実施形態の半導体装置を示す断面図である。図１に示す半導体装置は、半導体チップ１と、基板２と、半導体チップ１に設けられた端子３と、基板２に設けられた端子４と、端子３と端子４とを電気的に接続するボンディングワイヤ５と、を具備する。ボンディングワイヤ５は、端子３に接続される接続部１１と端子４に接続される接続部１２とを有する。   FIG. 1A is a cross-sectional view illustrating the semiconductor device of the embodiment. The semiconductor device shown in FIG. 1 electrically connects the semiconductor chip 1, the substrate 2, the terminals 3 provided on the semiconductor chip 1, the terminals 4 provided on the substrate 2, and the terminals 3 and 4. And a bonding wire 5. The bonding wire 5 has a connection part 11 connected to the terminal 3 and a connection part 12 connected to the terminal 4.

半導体チップ１には、例えばシリコン基板に設けられた半導体素子を用いる。半導体チップ１は、例えば接着層を介して基板上に形成される。基板２としては、例えば配線等が形成された回路基板等を用いることができる。端子３および端子４は、例えばアルミニウム、銅、金等を用いて形成される。ボンディングワイヤ５の径は、特に限定されないが例えば５０μｍ程度とすることができる。ボンディングワイヤ５としては、例えば金、アルミニウム等のワイヤを用いることができる。好ましくは、例えば端子３または端子４と同じ材料を用いることにより、同一材料間での接合となるため、接触抵抗を小さくすることができる。   For the semiconductor chip 1, for example, a semiconductor element provided on a silicon substrate is used. The semiconductor chip 1 is formed on a substrate via an adhesive layer, for example. As the substrate 2, for example, a circuit substrate on which wirings or the like are formed can be used. The terminals 3 and 4 are formed using, for example, aluminum, copper, gold or the like. The diameter of the bonding wire 5 is not particularly limited, but can be, for example, about 50 μm. As the bonding wire 5, for example, a wire such as gold or aluminum can be used. Preferably, for example, by using the same material as that of the terminal 3 or the terminal 4, bonding between the same materials is performed, so that the contact resistance can be reduced.

図１（Ｂ）は、接続部１１の拡大図である。接続部１１は、ボンディングワイヤ５の一部が圧着された接合領域３１と、接合領域３１とは異なる位置にボンディングワイヤ５の一部が圧着された接合領域３２と、を有する。このとき、接合領域３２は、接合領域３１よりも端子４に近い位置に設けられている。換言すると、接合領域３２から接続部１２までのボンディングワイヤ５の長さは、接合領域３１から接続部１２までのボンディングワイヤ５の長さよりも短い。さらに、接合領域３２におけるボンディングワイヤ５の厚さＴ２は接合領域３１におけるボンディングワイヤ５の厚さＴ１よりも厚い。例えば、接合領域３１は、ボンディングワイヤ５を第１の変形量で変形させた厚さを有し、接合領域３２は、ボンディングワイヤ５を第２の変形量で変形させた厚さを有する。接合領域３１および接合領域３２は、例えばボンディング装置によりボンディングワイヤ５の一部を端子３に押圧しつつ超音波振動させて圧着することにより形成される。このとき、例えば接合領域３２を形成するときにボンディングワイヤ５を押圧する圧力を接合領域３１の形成時よりも低くする、すなわち第２の変形量を第１の変形量よりも小さくすることにより、Ｔ２＞Ｔ１とすることができる。さらに、接合領域３２を形成するときにボンディングワイヤ５を超音波振動させる場合の超音波の周波数を接合領域３１の形成時よりも低くしてもよい。なお、ここで厚さＴ１およびＴ２の「厚さ」とは、ボンディングワイヤの接合領域３１および３２側を基準とした場合において、接合領域３１および３２における最も厚さが小さい部分の厚さを指す。   FIG. 1B is an enlarged view of the connection portion 11. The connection portion 11 includes a bonding region 31 in which a part of the bonding wire 5 is pressure-bonded and a bonding region 32 in which a part of the bonding wire 5 is pressure-bonded at a position different from the bonding region 31. At this time, the bonding region 32 is provided at a position closer to the terminal 4 than the bonding region 31. In other words, the length of the bonding wire 5 from the bonding region 32 to the connection portion 12 is shorter than the length of the bonding wire 5 from the bonding region 31 to the connection portion 12. Furthermore, the thickness T2 of the bonding wire 5 in the bonding region 32 is thicker than the thickness T1 of the bonding wire 5 in the bonding region 31. For example, the bonding region 31 has a thickness obtained by deforming the bonding wire 5 with the first deformation amount, and the bonding region 32 has a thickness obtained by deforming the bonding wire 5 with the second deformation amount. The bonding region 31 and the bonding region 32 are formed, for example, by pressing a part of the bonding wire 5 against the terminal 3 while being ultrasonically vibrated and pressing with a bonding apparatus. At this time, for example, when the bonding region 32 is formed, the pressure for pressing the bonding wire 5 is made lower than that at the time of forming the bonding region 31, that is, the second deformation amount is made smaller than the first deformation amount. T2> T1 can be satisfied. Further, when the bonding region 32 is formed, the frequency of ultrasonic waves when the bonding wire 5 is ultrasonically vibrated may be lower than that at the time of forming the bonding region 31. Here, the “thickness” of the thicknesses T1 and T2 refers to the thickness of the smallest thickness in the bonding regions 31 and 32 when the bonding regions 31 and 32 side of the bonding wire is used as a reference. .

接合領域３２を設けることにより、ボンディングワイヤ５の断線や剥離を抑制することができるため、半導体装置の信頼性を向上させることができる。例えば、接続部１１を形成した後にボンディングワイヤ５を湾曲させるが、このとき接続部１１近傍に強いストレス（応力）が発生する。このとき、接合領域３１の圧着力は接合領域３２よりも高く、薄く潰れた状態であるため、仮に接合領域３２が無い構成で接合領域３１近傍に上記ストレスがかかるとボンディングワイヤ５が断線または剥離しやすい。しかしながら、接合領域３２を設ける場合、上記ストレスが接合領域３２近傍にかかることになるが、接合領域３２の圧着力は接合領域３１よりも低いため、接合領域３１近傍に上記ストレスがかかる場合と比較して上記ストレスを緩和することができる。また、ボンディングワイヤ５を湾曲させる際の応力で仮に接合領域３２が剥離しても、接合領域３１で端子３の電気的な接続が維持される。よって、接続部１１におけるボンディングワイヤ５の断線や剥離が抑制されるため半導体装置の信頼性を向上させることができる。   By providing the bonding region 32, disconnection and peeling of the bonding wire 5 can be suppressed, so that the reliability of the semiconductor device can be improved. For example, the bonding wire 5 is bent after the connection portion 11 is formed. At this time, a strong stress (stress) is generated in the vicinity of the connection portion 11. At this time, since the bonding force of the bonding region 31 is higher than that of the bonding region 32 and is in a thinly crushed state, if the stress is applied in the vicinity of the bonding region 31 without the bonding region 32, the bonding wire 5 is disconnected or peeled off. It's easy to do. However, when the bonding region 32 is provided, the stress is applied in the vicinity of the bonding region 32. However, since the bonding force of the bonding region 32 is lower than that of the bonding region 31, the stress is applied in the vicinity of the bonding region 31. Thus, the stress can be alleviated. Further, even if the bonding region 32 is peeled off due to the stress when the bonding wire 5 is bent, the electrical connection of the terminal 3 is maintained in the bonding region 31. Therefore, since the disconnection and peeling of the bonding wire 5 in the connection part 11 are suppressed, the reliability of the semiconductor device can be improved.

なお、端子３および端子４は、本実施形態の半導体装置はこれに限定されない。例えば、図２（Ａ）及び図２（Ｂ）は、半導体装置の他の例を示す断面図である。   Note that the terminals 3 and 4 are not limited to the semiconductor device of this embodiment. For example, FIGS. 2A and 2B are cross-sectional views illustrating other examples of the semiconductor device.

図２（Ａ）に示す半導体装置は、図１（Ａ）に示す半導体装置と比較して、基板２に設けられた端子４上に、接合領域３１および接合領域３２を有する接続部１１を備え、端子３に接続部１２を備える点が異なる。図１（Ａ）に示す半導体装置と同じ部分については図１（Ａ）に示す半導体装置の説明を援用する。図２（Ａ）に示すように、基板２の端子３上に接合領域３１および接合領域３２を有する接続部１１を設けてもよい。   The semiconductor device illustrated in FIG. 2A includes a connection portion 11 having a bonding region 31 and a bonding region 32 over a terminal 4 provided on the substrate 2 as compared with the semiconductor device illustrated in FIG. The difference is that the terminal 3 is provided with a connecting portion 12. The description of the semiconductor device illustrated in FIG. 1A is referred to for the same portion as the semiconductor device illustrated in FIG. As shown in FIG. 2A, a connection portion 11 having a bonding region 31 and a bonding region 32 may be provided on the terminal 3 of the substrate 2.

また、図２（Ｂ）に示す半導体装置は、図１（Ａ）に示す半導体装置と比較して、半導体チップ１ａに設けられた端子３上に、接合領域３１および接合領域３２を有する接続部１１を備え、半導体チップ１ｂに設けられた端子４上に接続部１２を備える点が異なる。半導体チップ１ａ及び半導体チップ１ｂは、積層されている。図１（Ａ）に示す半導体装置と同じ部分については図１（Ａ）に示す半導体装置の説明を援用する。図２（Ｂ）に示すように、半導体チップ１ｂに設けられた端子４上に接続部１２を設け、半導体チップ１ｂ上に積層された半導体チップ１ａに設けられた端子３上に接続部１１を設けてもよい。反対に、半導体チップ１ｂに設けられた端子４上に接続部１１を設け、半導体チップ１ｂ上に積層された半導体チップ１ａに設けられた端子３上に接続部１２を設けてもよい。また、基板２の代わりにリードフレーム等を用いてもよい。   In addition, the semiconductor device shown in FIG. 2B has a junction region 31 and a junction region 32 on the terminal 3 provided on the semiconductor chip 1a, as compared with the semiconductor device shown in FIG. 11 and the connection part 12 is provided on the terminal 4 provided on the semiconductor chip 1b. The semiconductor chip 1a and the semiconductor chip 1b are stacked. The description of the semiconductor device illustrated in FIG. 1A is referred to for the same portion as the semiconductor device illustrated in FIG. As shown in FIG. 2B, the connection portion 12 is provided on the terminal 4 provided on the semiconductor chip 1b, and the connection portion 11 is provided on the terminal 3 provided on the semiconductor chip 1a stacked on the semiconductor chip 1b. It may be provided. On the contrary, the connection part 11 may be provided on the terminal 4 provided on the semiconductor chip 1b, and the connection part 12 may be provided on the terminal 3 provided on the semiconductor chip 1a stacked on the semiconductor chip 1b. Further, a lead frame or the like may be used instead of the substrate 2.

次に、図１に示す半導体装置のウェッジボンディングが可能なボンディング装置の例について図３を参照して説明する。   Next, an example of a bonding apparatus capable of wedge bonding of the semiconductor device shown in FIG. 1 will be described with reference to FIG.

図３（Ａ）は、ボンディング装置を示す模式図である。図３（Ａ）に示すボンディング装置は、ボンディング用ツール５１と、ボンディング用ツール５１の動作を制御する制御部５２と、を具備する。なお、ボンディングワイヤ５の送出・固定を制御するためにボンディング装置にクランプを設けてもよい。また、ボンディングワイヤ５を超音波振動させるためにボンディング装置に超音波発振器を設けてもよい。超音波発振器としては、例えば圧電素子を用いることができる。また、ボンディングワイヤ５を加熱する場合にはボンディング装置に加熱器を設けてもよい。   FIG. 3A is a schematic diagram showing a bonding apparatus. The bonding apparatus shown in FIG. 3A includes a bonding tool 51 and a control unit 52 that controls the operation of the bonding tool 51. Note that a clamp may be provided in the bonding apparatus in order to control the feeding / fixing of the bonding wire 5. Further, an ultrasonic oscillator may be provided in the bonding apparatus in order to ultrasonically vibrate the bonding wire 5. As the ultrasonic oscillator, for example, a piezoelectric element can be used. Further, when the bonding wire 5 is heated, a heater may be provided in the bonding apparatus.

ボンディング用ツール５１は、縦方向（Ｘ方向）、横方向（Ｙ方向）、高さ方向（Ｚ方向）に移動が可能である。ボンディング用ツール５１には、例えばタングステンやチタンなどの金属またはセラミックスなどの絶縁材料を用いる。   The bonding tool 51 is movable in the vertical direction (X direction), the horizontal direction (Y direction), and the height direction (Z direction). For the bonding tool 51, for example, a metal such as tungsten or titanium or an insulating material such as ceramics is used.

制御部５２は、例えばボンディング用ツール５１の移動、ボンディングワイヤ５の送出、およびボンディングワイヤ５に対する超音波の印加等の動作を制御する。制御部５２は、例えばプロセッサ等を用いたハードウェアを用いる。なお、各動作は、動作プログラムとしてメモリ等のコンピュータ読み取りが可能な記録媒体に保存しておき、ハードウェアにより記録媒体に記憶された動作プログラムを適宜読み出すことで各動作を実行してもよい。   The controller 52 controls operations such as movement of the bonding tool 51, delivery of the bonding wire 5, and application of ultrasonic waves to the bonding wire 5, for example. The control unit 52 uses hardware using a processor or the like, for example. Each operation may be stored as an operation program in a computer-readable recording medium such as a memory, and each operation may be executed by appropriately reading out the operation program stored in the recording medium by hardware.

図３（Ｂ）は、ボンディング用ツール５１における先端部の拡大図である。ボンディング用ツール５１は、ワイヤ送出部６１と、ワイヤ押圧部６２と、を備える。   FIG. 3B is an enlarged view of the tip portion of the bonding tool 51. The bonding tool 51 includes a wire sending part 61 and a wire pressing part 62.

ワイヤ送出部６１では、ボンディングワイヤ５を長さ方向に順次送出する。ボンディングワイヤ５の送出は、例えば制御部５２によりクランプを制御することにより調整することができる。ワイヤ送出部６１は、例えば貫通孔であることが好ましい。上記貫通孔は、ボンディングワイヤ５のガイドとしても機能する。   The wire sending unit 61 sends the bonding wires 5 sequentially in the length direction. The delivery of the bonding wire 5 can be adjusted by controlling the clamp by the control unit 52, for example. It is preferable that the wire delivery part 61 is a through-hole, for example. The through hole also functions as a guide for the bonding wire 5.

ワイヤ押圧部６２は、凸部となっており、凸部によりワイヤ送出部６１から送出されたボンディングワイヤ５の一部を押圧することができる。なお、凸部の角に丸みを持たせることにより、押圧時にボンディングワイヤ５の断線を抑制してもよい。   The wire pressing part 62 is a convex part, and a part of the bonding wire 5 sent from the wire sending part 61 can be pressed by the convex part. In addition, you may suppress the disconnection of the bonding wire 5 at the time of a press by giving the corner | angular part of a convex part roundness.

次に、図１（Ａ）に示す半導体装置のボンディングの例について、図４（Ａ）ないし図４（Ｄ）を参照して説明する。図４（Ａ）ないし図４（Ｄ）は、ボンディング装置を用いた半導体装置のウェッジボンディングを示す断面図である。なお、各動作については、制御部５２により制御するものとする。   Next, an example of bonding of the semiconductor device illustrated in FIG. 1A will be described with reference to FIGS. 4A to 4D are cross-sectional views illustrating wedge bonding of a semiconductor device using a bonding apparatus. Each operation is controlled by the control unit 52.

まず、図４（Ａ）に示すように、ボンディング用ツール５１を移動し、ワイヤ送出部６１からボンディングワイヤ５の一部を送出して端子３上にボンディングワイヤ５の一部を配置する。さらに、ワイヤ押圧部６２により第１の圧力でボンディングワイヤ５の一部を押圧しつつ第１の周波数で超音波振動させて圧着することにより、接合領域３１を形成する。   First, as shown in FIG. 4A, the bonding tool 51 is moved, a part of the bonding wire 5 is sent out from the wire sending part 61, and a part of the bonding wire 5 is arranged on the terminal 3. Further, the bonding region 31 is formed by pressing the part of the bonding wire 5 with the first pressure by the wire pressing part 62 and ultrasonically vibrating the first bonding wire 5 at the first frequency.

次に、図４（Ｂ）に示すように、ボンディング用ツール５１を移動し、ワイヤ送出部６１からボンディングワイヤ５の一部を送出して端子３上にボンディングワイヤ５の一部を配置する。さらに、ワイヤ押圧部６２により、第１の圧力よりも低い第２の圧力でボンディングワイヤ５の一部を押圧しつつ第１の周波数よりも低い第２の周波数で超音波振動させて圧着することにより、接合領域３２を形成する。なお、第２の周波数に限定されず、第１の周波数としてもよい。このとき、接合領域３２におけるボンディングワイヤ５の変形量は、接合領域３１におけるボンディングワイヤ５の変形量よりも小さくなるため、接合領域３２におけるボンディングワイヤ５の厚さは、接合領域３１におけるボンディングワイヤ５の厚さよりも厚くなる。   Next, as shown in FIG. 4B, the bonding tool 51 is moved, a part of the bonding wire 5 is sent out from the wire sending part 61, and a part of the bonding wire 5 is arranged on the terminal 3. Further, the wire pressing unit 62 presses a part of the bonding wire 5 with a second pressure lower than the first pressure, and ultrasonically vibrates at a second frequency lower than the first frequency to perform pressure bonding. Thus, the junction region 32 is formed. Note that the first frequency is not limited to the second frequency. At this time, since the deformation amount of the bonding wire 5 in the bonding region 32 is smaller than the deformation amount of the bonding wire 5 in the bonding region 31, the thickness of the bonding wire 5 in the bonding region 32 is equal to the bonding wire 5 in the bonding region 31. It will be thicker than

次に、図４（Ｃ）に示すように、ボンディング用ツール５１を移動し、ボンディングワイヤ５を塑性変形させてボンディングワイヤ５を湾曲させる。   Next, as shown in FIG. 4C, the bonding tool 51 is moved, and the bonding wire 5 is plastically deformed to bend the bonding wire 5.

このとき、接合領域３２近傍にストレスがかかる。しかしながら、接合領域３２は、接合領域３１に比べて低い圧力でボンディングワイヤ５を圧着させているため、接合領域３２を形成しない場合の接合領域３１近傍にかかるストレスに比べて接合領域３２近傍にかかるストレスを緩和することができる。よって、接合領域３２近傍においてボンディングワイヤ５の断線または剥離が抑制されるため半導体装置の信頼性を向上させることができる。   At this time, stress is applied in the vicinity of the junction region 32. However, since the bonding region 32 is bonded to the bonding wire 5 with a pressure lower than that of the bonding region 31, the bonding region 32 is applied near the bonding region 32 compared to the stress applied to the bonding region 31 when the bonding region 32 is not formed. Can relieve stress. Therefore, since the disconnection or peeling of the bonding wire 5 is suppressed in the vicinity of the bonding region 32, the reliability of the semiconductor device can be improved.

さらに、図４（Ｄ）に示すように、ボンディング用ツール５１を移動し、ワイヤ送出部６１からボンディングワイヤ５の一部を送出して端子４上にボンディングワイヤ５の一部を配置する。さらに、ワイヤ押圧部６２によりボンディングワイヤ５の一部を押圧しつつ超音波振動させて圧着して接合領域を形成することにより、接続部１２を形成する。その後、クランプにより固定されているボンディングワイヤ５を引っ張ることで切断する。以上により半導体装置のボンディングを行うことができる。   Further, as shown in FIG. 4D, the bonding tool 51 is moved, and a part of the bonding wire 5 is sent out from the wire sending part 61 to place a part of the bonding wire 5 on the terminal 4. Further, the connecting portion 12 is formed by pressing the part of the bonding wire 5 while being pressed by the wire pressing portion 62 and ultrasonically vibrating and pressing to form a bonding region. Then, it cut | disconnects by pulling the bonding wire 5 currently fixed with the clamp. Thus, bonding of the semiconductor device can be performed.

（第２の実施形態）   (Second Embodiment)

図３（Ａ）および図３（Ｂ）に示すボンディング用ツール５１の代わりに別のボンティング用ツールを用いることができる。図５は、ボンディング用ツールのおける先端部の拡大図である。図５に示すボンディング用ツール７１は、ワイヤ送出部８１と、ワイヤ押圧部８２と、を備える。   Instead of the bonding tool 51 shown in FIGS. 3A and 3B, another bonding tool can be used. FIG. 5 is an enlarged view of the tip of the bonding tool. A bonding tool 71 shown in FIG. 5 includes a wire delivery part 81 and a wire pressing part 82.

ボンディング用ツール７１は、縦方向（Ｘ方向）、横方向（Ｙ方向）、高さ方向（Ｚ方向）に移動が可能である。ボンディング用ツール７１には、例えばタングステンやチタンなどの金属またはセラミックスなどの絶縁材料を用いる。   The bonding tool 71 is movable in the vertical direction (X direction), the horizontal direction (Y direction), and the height direction (Z direction). For the bonding tool 71, for example, a metal such as tungsten or titanium or an insulating material such as ceramics is used.

ワイヤ送出部８１は、図３（Ｂ）に示すワイヤ送出部６１と同じであるため、ワイヤ送出部６１の説明を援用する。ワイヤ押圧部８２は、凸部９１と、凸部９２と、を有する。凸部９２は、凸部９１とワイヤ送出部８１との間に設けられ、高さが凸部９１よりも低い。換言すると、ボンディングワイヤ５の進行方向側の凸部９１が反対側の凸部９２よりも高くなっている。   Since the wire sending unit 81 is the same as the wire sending unit 61 shown in FIG. 3B, the description of the wire sending unit 61 is cited. The wire pressing portion 82 has a convex portion 91 and a convex portion 92. The convex portion 92 is provided between the convex portion 91 and the wire sending portion 81, and the height is lower than that of the convex portion 91. In other words, the convex portion 91 on the traveling direction side of the bonding wire 5 is higher than the convex portion 92 on the opposite side.

このとき、押圧時の凸部９２の圧力は、凸部９１の高さと凸部９２の高さとの差によっても変化する。例えば、凸部９１の高さと凸部９２の高さとの差は、圧着する前のボンディングワイヤ５の径よりも小さいことが好ましい。凸部９１の高さと凸部９２の高さとの差がボンディングワイヤ５の径よりも大きいと凸部９１の押圧時の圧力が凸部９２の押圧時の圧力よりも高すぎて凸部９１によりボンディングワイヤ５が断線しやすくなる。よって、凸部９１の高さと凸部９２の高さとの差をボンディングワイヤ５の径よりも小さくして凸部９１の押圧時の圧力と凸部９２の押圧時の圧力を調整することにより、ボンディングワイヤ５の断線を抑制することができ、半導体装置の信頼性を向上させることができる。また、凸部９１および凸部９２のそれぞれの角に丸みを持たせることにより、押圧時にボンディングワイヤ５の断線を抑制することもできる。   At this time, the pressure of the convex portion 92 at the time of pressing also changes depending on the difference between the height of the convex portion 91 and the height of the convex portion 92. For example, the difference between the height of the convex portion 91 and the height of the convex portion 92 is preferably smaller than the diameter of the bonding wire 5 before crimping. If the difference between the height of the convex portion 91 and the height of the convex portion 92 is larger than the diameter of the bonding wire 5, the pressure when the convex portion 91 is pressed is too high than the pressure when the convex portion 92 is pressed. The bonding wire 5 is easily broken. Therefore, by adjusting the pressure at the time of pressing the convex portion 92 and the pressure at the time of pressing the convex portion 92 by adjusting the difference between the height of the convex portion 91 and the height of the convex portion 92 to be smaller than the diameter of the bonding wire 5, The disconnection of the bonding wire 5 can be suppressed, and the reliability of the semiconductor device can be improved. Further, by rounding the corners of the convex portion 91 and the convex portion 92, it is possible to suppress the disconnection of the bonding wire 5 during pressing.

図５に示すように、ワイヤ押圧部８２に高さの異なる複数の凸部を設けることにより、同一工程で複数の領域においてボンディングワイヤ５を圧着することができるため、製造工程数を減らすことができる。さらに、同一工程で圧着力の異なる複数の接合領域を形成することができる。   As shown in FIG. 5, by providing a plurality of convex portions having different heights on the wire pressing portion 82, the bonding wire 5 can be crimped in a plurality of regions in the same process, thereby reducing the number of manufacturing steps. it can. Furthermore, a plurality of joining regions having different crimping forces can be formed in the same process.

図５に示すボンディング用ツール７１を用いた場合の図１（Ａ）に示す半導体装置のボンディングについて図６（Ａ）および図６（Ｂ）を参照して説明する。図６（Ａ）および図６（Ｂ）はボンディング装置を用いた半導体装置のウェッジボンディングを示す断面図である。なお、各動作は、図３（Ａ）に示す制御部５２により制御されるものとする。   Bonding of the semiconductor device shown in FIG. 1A when the bonding tool 71 shown in FIG. 5 is used will be described with reference to FIGS. 6A and 6B. 6A and 6B are cross-sectional views illustrating wedge bonding of a semiconductor device using a bonding apparatus. Each operation is controlled by the control unit 52 shown in FIG.

図６（Ａ）に示すように、ボンディング用ツール７１を移動し、ワイヤ送出部８１からボンディングワイヤ５の一部を送出して端子３上にボンディングワイヤ５を配置する。さらに、凸部９１でボンディングワイヤ５の一部を押圧しつつ超音波振動させて圧着することにより接合領域３１を形成すると共に、接合領域３１と異なる位置において凸部９２でボンディングワイヤ５の一部を押圧しつつ超音波振動させて圧着することにより接合領域３２を形成する。このとき、凸部９２による圧力は凸部９１による圧力よりも低くなる。これにより、接合領域３２におけるボンディングワイヤ５の圧着力は、接合領域３１におけるボンディングワイヤ５の圧着力よりも小さくなり、接合領域３２におけるボンディングワイヤ５の厚さは接合領域３１におけるボンディングワイヤ５の厚さよりも厚くなる。接合領域３２を設けることにより、ボンディングワイヤ５の断線または剥離を抑制することができ半導体装置の信頼性を向上させることができる。また、ボンディング用ツール７１を用いることにより、接合領域３１および接合領域３２を同一工程で形成することができる。   As shown in FIG. 6A, the bonding tool 71 is moved, a part of the bonding wire 5 is sent out from the wire sending part 81, and the bonding wire 5 is arranged on the terminal 3. Further, the bonding region 31 is formed by ultrasonically vibrating and pressing the part of the bonding wire 5 with the convex part 91 to form a bonding region 31, and a part of the bonding wire 5 with the convex part 92 at a position different from the bonding region 31. The joining area | region 32 is formed by carrying out ultrasonic vibration, pressing, and crimping | bonding. At this time, the pressure by the convex part 92 becomes lower than the pressure by the convex part 91. Thereby, the crimping force of the bonding wire 5 in the bonding region 32 is smaller than the crimping force of the bonding wire 5 in the bonding region 31, and the thickness of the bonding wire 5 in the bonding region 32 is the thickness of the bonding wire 5 in the bonding region 31. It becomes thicker than this. By providing the bonding region 32, disconnection or peeling of the bonding wire 5 can be suppressed, and the reliability of the semiconductor device can be improved. Further, by using the bonding tool 71, the bonding region 31 and the bonding region 32 can be formed in the same process.

その後、端子４にボンディングワイヤ５の一部を圧着させる場合には、第１の実施形態と同様にボンディング用ツール７１を移動し、ボンディングワイヤ５を塑性変形させてボンディングワイヤ５を湾曲させる。さらに、ボンディング用ツール７１を移動し、ワイヤ送出部８１からボンディングワイヤ５の一部を送出して端子４上にボンディングワイヤ５の一部を配置する。さらに、ワイヤ押圧部８２によりボンディングワイヤ５の一部を押圧しつつ超音波振動させて圧着して接合領域を形成することにより、図６（Ｂ）に示すように接続部１２を形成する。その後、クランプにより固定されているボンディングワイヤ５を引っ張ることで切断する。以上により半導体装置のボンディングを行うことができる。   Thereafter, when a part of the bonding wire 5 is pressure-bonded to the terminal 4, the bonding tool 71 is moved as in the first embodiment, and the bonding wire 5 is plastically deformed to bend the bonding wire 5. Further, the bonding tool 71 is moved, a part of the bonding wire 5 is sent out from the wire sending part 81, and a part of the bonding wire 5 is arranged on the terminal 4. Furthermore, the connecting portion 12 is formed as shown in FIG. 6B by forming a bonding region by pressing the part of the bonding wire 5 with the wire pressing portion 82 and ultrasonically oscillating it to form a bonding region. Then, it cut | disconnects by pulling the bonding wire 5 currently fixed with the clamp. Thus, bonding of the semiconductor device can be performed.

なお、本発明のいくつかの実施形態を説明したが、これらの実施形態は例として提示したものであり、発明の範囲を限定することは意図していない。これら新規な実施形態は、その他の様々な形態で実施し得るものであり、発明の要旨を逸脱しない範囲で、種々の省略、置き換え、変更を行うことができる。これら実施形態やその変形は、発明の範囲や要旨に含まれると共に、特許請求の範囲に記載された発明とその均等の範囲に含まれる。   In addition, although several embodiment of this invention was described, these embodiment is shown as an example and is not intending limiting the range of invention. These novel embodiments can be implemented in various other forms, and various omissions, replacements, and changes can be made without departing from the scope of the invention. These embodiments and modifications thereof are included in the scope and gist of the invention, and are included in the invention described in the claims and the equivalents thereof.

１…半導体チップ、１ａ…半導体チップ、１ｂ…半導体チップ、２…基板、３…端子、４…端子、５…ボンディングワイヤ、１１…接続部、１２…接続部、３１…接合領域、３２…接合領域、３３…接合領域、５１…ボンディング用ツール、５２…制御部、６１…ワイヤ送出部、６２…ワイヤ押圧部、７１…ボンディング用ツール、８１…ワイヤ送出部、８２…ワイヤ押圧部、９１…凸部、９２…凸部   DESCRIPTION OF SYMBOLS 1 ... Semiconductor chip, 1a ... Semiconductor chip, 1b ... Semiconductor chip, 2 ... Board | substrate, 3 ... Terminal, 4 ... Terminal, 5 ... Bonding wire, 11 ... Connection part, 12 ... Connection part, 31 ... Joining area, 32 ... Joining Region 33, Bonding region 51, Bonding tool 52, Control unit 61, Wire sending unit 62, Wire pressing unit 71, Bonding tool 81, Wire sending unit 82, Wire pressing unit 91 Convex part, 92 ... convex part

Claims (5)

ボンディングワイヤを長さ方向に順次送出するワイヤ送出部と、
前記ワイヤ送出部から送出された前記ボンディングワイヤの一部を押圧するワイヤ押圧部と、を備え、
前記ワイヤ押圧部は、
第１の凸部と、
前記第１の凸部と前記ワイヤ送出部との間に設けられ、高さが前記第１の凸部よりも低い第２の凸部と、を有することを特徴とするボンディング用ツール。 A wire sending section for sending the bonding wires sequentially in the length direction;
A wire pressing part that presses a part of the bonding wire sent from the wire sending part,
The wire pressing part is
A first convex portion;
A bonding tool comprising: a second convex portion provided between the first convex portion and the wire feeding portion and having a height lower than that of the first convex portion. 請求項１に記載のボンディング用ツールと、
前記ボンディング用ツールの動作を制御する制御部と、を具備し、
前記制御部は、
前記ボンディング用ツールを移動し、前記ワイヤ送出部から前記ボンディングワイヤの一部を送出して端子上に前記ボンディングワイヤを配置する動作と、
前記第１の凸部で前記ボンディングワイヤの一部を押圧しつつ超音波振動させて圧着することにより第１の接合領域を形成しつつ、前記第２の凸部で前記第１の接合領域と異なる位置に前記ボンディングワイヤの一部を押圧しつつ超音波振動させて圧着することにより第２の接合領域を形成する動作と、の実行を制御することを特徴とするボンディング装置。 A bonding tool according to claim 1;
A controller for controlling the operation of the bonding tool,
The controller is
An operation of moving the bonding tool, sending a part of the bonding wire from the wire sending unit, and placing the bonding wire on a terminal;
While forming a first bonding region by ultrasonically vibrating and pressing a part of the bonding wire while pressing a part of the bonding wire with the first protrusion, the second protrusion and the first bonding region A bonding apparatus that controls execution of an operation of forming a second bonding region by pressing ultrasonic waves while pressing a part of the bonding wire at different positions and pressing the bonding wires. ボンディングワイヤを長さ方向に順次送出するワイヤ送出部と、前記ワイヤ送出部から送出された前記ボンディングワイヤの一部を押圧するワイヤ押圧部と、を備えるボンディング用ツールと、
前記ボンディング用ツールの動作を制御する制御部と、を具備し、
前記制御部は、
前記ボンディング用ツールを移動し、前記ワイヤ送出部から前記ボンディングワイヤの一部を送出して端子上に前記ボンディングワイヤの一部を配置する動作と、
前記ワイヤ押圧部により第１の圧力で前記ボンディングワイヤの一部を押圧しつつ超音波振動させて圧着することにより第１の接合領域を形成する動作と、
前記ボンディング用ツールを移動し、前記ワイヤ送出部から前記ボンディングワイヤの一部を送出して前記端子の前記第１の接合領域と異なる位置に前記ボンディングワイヤの一部を配置する動作と、
前記ワイヤ押圧部により前記第１の圧力よりも低い第２の圧力で前記ボンディングワイヤの一部を押圧しつつ超音波振動させて圧着することにより第２の接合領域を形成する動作と、の実行を制御することを特徴とするボンディング装置。 A bonding tool comprising: a wire sending part that sends out bonding wires sequentially in the length direction; and a wire pressing part that presses a part of the bonding wire sent from the wire sending part;
A controller for controlling the operation of the bonding tool,
The controller is
An operation of moving the bonding tool, sending a part of the bonding wire from the wire sending unit, and placing a part of the bonding wire on a terminal;
An operation of forming a first bonding region by ultrasonically vibrating and pressing a part of the bonding wire with a first pressure by the wire pressing portion;
An operation of moving the bonding tool, sending a part of the bonding wire from the wire sending unit, and placing a part of the bonding wire at a position different from the first joining region of the terminal;
An operation of forming a second bonding region by ultrasonically vibrating and pressing a part of the bonding wire while pressing a part of the bonding wire at a second pressure lower than the first pressure by the wire pressing portion. A bonding apparatus characterized by controlling the temperature. 第１の端子と、
第２の端子と、
前記第１の端子に接続された第１の接続部と前記第２の端子に接続された第２の接続部とを有し、前記第１の端子と前記第２の端子とを電気的に接続するボンディングワイヤと、を具備し、
前記第１の接続部は、
前記ボンディングワイヤの一部が圧着された第１の接合領域と、
前記第１の接合領域よりも前記第２の端子に近い位置に前記ボンディングワイヤの一部が圧着された第２の接合領域と、を有し、
前記第２の接合領域における前記ボンディングワイヤの厚さは、前記第１の接合領域における前記ボンディングワイヤの厚さよりも厚いことを特徴とする半導体装置。 A first terminal;
A second terminal;
A first connection portion connected to the first terminal and a second connection portion connected to the second terminal, wherein the first terminal and the second terminal are electrically connected to each other; A bonding wire to be connected,
The first connection portion is
A first bonding region where a part of the bonding wire is crimped;
A second bonding region in which a part of the bonding wire is crimped at a position closer to the second terminal than the first bonding region;
The semiconductor device according to claim 1, wherein a thickness of the bonding wire in the second bonding region is thicker than a thickness of the bonding wire in the first bonding region. 前記第１の接合領域は、前記ボンディングワイヤの一部を第１の変形量で変形させた厚さを有し、
前記第２の接合領域は、前記ボンディングワイヤの一部を前記第１の変形量よりも小さい第２の変形量で変形させた厚さを有する請求項４に記載の半導体装置。 The first bonding region has a thickness obtained by deforming a part of the bonding wire by a first deformation amount;
The semiconductor device according to claim 4, wherein the second bonding region has a thickness obtained by deforming a part of the bonding wire with a second deformation amount that is smaller than the first deformation amount.
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