JP2007266062A - Process for manufacturing semiconductor device - Google Patents

Process for manufacturing semiconductor device Download PDF

Info

Publication number
JP2007266062A
JP2007266062A JP2006085472A JP2006085472A JP2007266062A JP 2007266062 A JP2007266062 A JP 2007266062A JP 2006085472 A JP2006085472 A JP 2006085472A JP 2006085472 A JP2006085472 A JP 2006085472A JP 2007266062 A JP2007266062 A JP 2007266062A
Authority
JP
Japan
Prior art keywords
wire
bonding
bump
bonding tool
ball
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
JP2006085472A
Other languages
Japanese (ja)
Inventor
Katsuhiro Ishida
勝広 石田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP2006085472A priority Critical patent/JP2007266062A/en
Publication of JP2007266062A publication Critical patent/JP2007266062A/en
Withdrawn legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies
    • H01L24/78—Apparatus for connecting with wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/4501—Shape
    • H01L2224/45012—Cross-sectional shape
    • H01L2224/45015—Cross-sectional shape being circular
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144—Gold (Au) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48095—Kinked
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/4847—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond
    • H01L2224/48471—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond the other connecting portion not on the bonding area being a ball bond, i.e. wedge-to-ball, reverse stitch
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/48475—Connecting portions connected to auxiliary connecting means on the bonding areas, e.g. pre-ball, wedge-on-ball, ball-on-ball
    • H01L2224/48476—Connecting portions connected to auxiliary connecting means on the bonding areas, e.g. pre-ball, wedge-on-ball, ball-on-ball between the wire connector and the bonding area
    • H01L2224/48477—Connecting portions connected to auxiliary connecting means on the bonding areas, e.g. pre-ball, wedge-on-ball, ball-on-ball between the wire connector and the bonding area being a pre-ball (i.e. a ball formed by capillary bonding)
    • H01L2224/48478—Connecting portions connected to auxiliary connecting means on the bonding areas, e.g. pre-ball, wedge-on-ball, ball-on-ball between the wire connector and the bonding area being a pre-ball (i.e. a ball formed by capillary bonding) the connecting portion being a wedge bond, i.e. wedge on pre-ball
    • H01L2224/48479—Connecting portions connected to auxiliary connecting means on the bonding areas, e.g. pre-ball, wedge-on-ball, ball-on-ball between the wire connector and the bonding area being a pre-ball (i.e. a ball formed by capillary bonding) the connecting portion being a wedge bond, i.e. wedge on pre-ball on the semiconductor or solid-state body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/485—Material
    • H01L2224/48505—Material at the bonding interface
    • H01L2224/48599—Principal constituent of the connecting portion of the wire connector being Gold (Au)
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/78—Apparatus for connecting with wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/78—Apparatus for connecting with wire connectors
    • H01L2224/7825—Means for applying energy, e.g. heating means
    • H01L2224/783—Means for applying energy, e.g. heating means by means of pressure
    • H01L2224/78301—Capillary
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/78—Apparatus for connecting with wire connectors
    • H01L2224/7825—Means for applying energy, e.g. heating means
    • H01L2224/783—Means for applying energy, e.g. heating means by means of pressure
    • H01L2224/78301—Capillary
    • H01L2224/78302—Shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/85009—Pre-treatment of the connector or the bonding area
    • H01L2224/85051—Forming additional members, e.g. for "wedge-on-ball", "ball-on-wedge", "ball-on-ball" connections
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/8512—Aligning
    • H01L2224/85148—Aligning involving movement of a part of the bonding apparatus
    • H01L2224/85169—Aligning involving movement of a part of the bonding apparatus being the upper part of the bonding apparatus, i.e. bonding head, e.g. capillary or wedge
    • H01L2224/8518—Translational movements
    • H01L2224/85186—Translational movements connecting first outside the semiconductor or solid-state body, i.e. off-chip, reverse stitch
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/852—Applying energy for connecting
    • H01L2224/85201—Compression bonding
    • H01L2224/85205—Ultrasonic bonding
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/85986—Specific sequence of steps, e.g. repetition of manufacturing steps, time sequence
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01004—Beryllium [Be]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01006—Carbon [C]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01029—Copper [Cu]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01033—Arsenic [As]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01075—Rhenium [Re]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01079—Gold [Au]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01082—Lead [Pb]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/095—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00 with a principal constituent of the material being a combination of two or more materials provided in the groups H01L2924/013 - H01L2924/0715
    • H01L2924/097—Glass-ceramics, e.g. devitrified glass
    • H01L2924/09701—Low temperature co-fired ceramic [LTCC]

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Wire Bonding (AREA)

Abstract

<P>PROBLEM TO BE SOLVED: To decrease breaking tenacity of a wire by reducing the breaking area of the wire during tail cut operation in the process for forming a bump or the stitch bonding process. <P>SOLUTION: A ball is formed at the tip of a wire 12, supported by a bonding tool 11 and compressed onto an electrode 6 of a semiconductor element 4 and bonded. While sustaining a pressed state of the compressed ball (bump 14), a bonding tool 11 is moved in the horizontal direction. After a tail is formed by raising the bonding tool 11, the wire 12 is pulled up under clamped state and then cut. In the stitch bonding process, the bonding tool 11 is moved in the horizontal direction, while sustaining the pressed state of the wire stitch bonded to the bump, and then formation of rail and cutting of wire are performed. <P>COPYRIGHT: (C)2008,JPO&INPIT

Description

本発明は半導体素子への接続にワイヤボンディングを適用した半導体装置の製造方法に関する。   The present invention relates to a method for manufacturing a semiconductor device in which wire bonding is applied to connection to a semiconductor element.

回路基板やリードフレーム等の回路基材と半導体素子とをワイヤボンディング接続するにあたって、半導体素子の小型・高精細化やそれを用いた半導体装置の薄型化等を実現するために、リバースボンディングの適用が増加している（特許文献１，２等参照）。リバースボンディングはワイヤループ高さが低く、さらに隣接するワイヤ間の接触の抑制に効果を発揮するというような利点を有する。   Applying reverse bonding to realize the miniaturization and high-definition of semiconductor elements and the thinning of semiconductor devices using them when connecting circuit elements such as circuit boards and lead frames to semiconductor elements by wire bonding. (See Patent Documents 1 and 2, etc.). Reverse bonding has such advantages that the wire loop height is low and that it is effective in suppressing contact between adjacent wires.

リバースボンディングにおいては、まず回路基材の接続パッドに対してボールボンディングした後、ワイヤを繰り出してワイヤリングしつつ、ボンディングツールを半導体素子の電極パッド上に移動させてステッチボンディングする。この際、半導体素子の電極パッド上には予めバンプを形成しておいて、この電極パッド上に形成されたバンプに対してステッチボンディングする。ここで、電極パッド上へのバンプの形成工程およびバンプへのステッチボンディング工程では、いずれもテールカット動作が生じる。   In reverse bonding, first, ball bonding is performed on the connection pads of the circuit substrate, and then the wire is fed and wired, and the bonding tool is moved onto the electrode pads of the semiconductor element to perform stitch bonding. At this time, bumps are formed in advance on the electrode pads of the semiconductor element, and stitch bonding is performed on the bumps formed on the electrode pads. Here, in both the bump formation process on the electrode pad and the stitch bonding process to the bump, a tail cut operation occurs.

すなわち、バンプの形成工程においては、まずワイヤの先端に形成したボールを半導体素子の電極パッド上に圧接し、さらにボンディングツールで荷重と超音波を加えてボールと電極パッドとを接合した後、ボンディングツールを上昇させてワイヤを一定量繰り出す。この繰り出されたワイヤをテールと呼ぶ。テールを形成したワイヤをカットクランパでクランプした後、カットクランパを上昇させてワイヤをバンプから切り離す。これをテールカット動作と呼ぶ。バンプへのステッチボンディング工程においても、バンプ上にワイヤをステッチボンディングした後、ワイヤを一定量繰り出してテールを形成し、同様なテールカット動作を行う。   That is, in the bump formation process, the ball formed at the tip of the wire is first pressed onto the electrode pad of the semiconductor element, and the ball and the electrode pad are bonded by applying a load and an ultrasonic wave with a bonding tool, and then bonding. Raise the tool and feed a certain amount of wire. This drawn-out wire is called a tail. After the wire having the tail formed thereon is clamped by the cut clamper, the cut clamper is raised to separate the wire from the bump. This is called a tail cut operation. Also in the stitch bonding process to the bump, after a wire is stitch-bonded on the bump, a certain amount of the wire is drawn out to form a tail, and a similar tail cutting operation is performed.

このように、バンプの形成工程やバンプへのステッチボンディング工程におけるテールカット動作は、いずれもバンプ上でのテールカットとなる。バンプ上でのテールカット動作では、ワイヤの破断面にバンプが影響を及ぼすことから、ワイヤの破断面積が大きくなる。ワイヤ破断部の破断面積が大きくなることで、テールカット時の破断強度が大きくなることから、カットクランパより下部のワイヤ（テール部を含む）に座屈（ワイヤの曲り）が発生しやすくなる。この座屈したワイヤは、次に実施されるボンディングワイヤに現れることで、隣接した異電位ボンディングワイヤとの間でショートの発生原因となる。   As described above, the tail cut operation in the bump forming process or the stitch bonding process to the bump is a tail cut on the bump. In the tail cut operation on the bump, the bump affects the fracture surface of the wire, so that the broken area of the wire increases. Since the breaking area of the wire breaking portion is increased, the breaking strength at the time of tail cutting is increased. Therefore, buckling (bending of the wire) is likely to occur in the wire (including the tail portion) below the cut clamper. The buckled wire appears in a bonding wire to be executed next, and causes a short circuit between adjacent different potential bonding wires.

バンプの形成工程では例えば特許文献３に記載されているように、ボールを電極パッド上に圧着した後に、ボンディングツールを一旦上昇させてエッジ側に移動させ、ボンディングツールを再度ボールに押し付ける場合もある。このような場合にも、ワイヤの下部には圧着されたボール（バンプ）が存在するため、ワイヤがバンプと圧接されることによって、テールカット時のワイヤの破断面積を十分に小さくすることはできない。バンプへのステッチボンディング工程も同様であり、ボンディングツールをバンプのエッジ側に押し付けたとしても、バンプと圧接されることでワイヤの破断面積が大きくなる。
特開2002-280412号公報 特開2004-056021号公報 特開2004-247674号公報 In the bump formation process, for example, as described in Patent Document 3, after bonding the ball onto the electrode pad, the bonding tool may be temporarily raised and moved to the edge side, and the bonding tool may be pressed against the ball again. . Even in such a case, since there is a pressure-bonded ball (bump) at the lower part of the wire, the broken area of the wire at the time of tail cutting cannot be made sufficiently small by pressing the wire against the bump. . The stitch bonding process to the bump is the same, and even if the bonding tool is pressed against the edge side of the bump, the broken area of the wire is increased by being pressed against the bump.
Japanese Patent Laid-Open No. 2002-280412 JP 2004-056021 A Japanese Patent Laid-Open No. 2004-247674

本発明の目的は、バンプの形成工程やバンプへのステッチボンディング工程におけるテールカット動作時に、ワイヤの破断面積を小さくしてワイヤの破断強度を低下させることを可能にした半導体装置の製造方法を提供することにある。   An object of the present invention is to provide a semiconductor device manufacturing method capable of reducing the breaking strength of the wire by reducing the breaking area of the wire during the tail cut operation in the bump formation process or the stitch bonding process to the bump. There is to do.

本発明の一態様に係る半導体装置の製造方法は、ボンディングツールに支持されたワイヤの先端にボールを形成する工程と、前記ワイヤの先端に形成された前記ボールを回路基材または半導体素子のボンディングパッド上に圧着して接合する工程と、前記ボンディングパッド上に接合された前記ボールへの加圧状態を維持しつつ、前記ボンディングツールを水平方向に移動させる工程と、前記ボンディングツールを上昇させて前記ワイヤを繰り出す工程と、前記ワイヤをクランプした状態で引き上げて切断し、前記ボンディングパッド上にバンプを形成する工程とを具備することを特徴としている。   A method of manufacturing a semiconductor device according to an aspect of the present invention includes a step of forming a ball at a tip of a wire supported by a bonding tool, and bonding the ball formed at the tip of the wire to a circuit substrate or a semiconductor element. A step of pressing and bonding on the pad, a step of moving the bonding tool in a horizontal direction while maintaining a pressure state on the ball bonded on the bonding pad, and raising the bonding tool. The method includes a step of feeding the wire, and a step of pulling and cutting the wire in a clamped state to form a bump on the bonding pad.

本発明の他の態様に係る半導体装置の製造方法は、半導体素子のボンディングパッド上にバンプを形成する工程と、ボンディングツールに支持されたワイヤの先端にボールを形成する工程と、前記ワイヤの先端に形成されたボールを、回路基材のボンディングパッド上にボールボンディングする工程と、前記ワイヤを繰り出してワイヤリングしつつ、前記ボンディングツールを前記バンプ上に移動させる工程と、前記ワイヤを前記バンプにステッチボンディングする工程と、前記バンプにステッチボンディングされた前記ワイヤへの加圧状態を維持しつつ、前記ボンディングツールを水平方向に移動させる工程と、前記ボンディングツールを上昇させて前記ワイヤを繰り出す工程と、前記ワイヤをクランプした状態で引き上げて切断する工程とを具備することを特徴としている。   A method of manufacturing a semiconductor device according to another aspect of the present invention includes a step of forming a bump on a bonding pad of a semiconductor element, a step of forming a ball at the tip of a wire supported by a bonding tool, and a tip of the wire. A step of ball bonding the ball formed on the bonding pad of the circuit substrate, a step of moving the bonding tool onto the bump while feeding and wiring the wire, and stitching the wire to the bump A step of bonding, a step of moving the bonding tool in a horizontal direction while maintaining a pressurized state to the wire stitch-bonded to the bump, a step of raising the bonding tool and feeding the wire, A process of lifting and cutting the wire in a clamped state It is characterized by having a.

本発明の態様に係る半導体装置の製造方法によれば、バンプ上でのテールカット動作時にワイヤの破断面積を小さくすることができる。これによって、ワイヤの破断強度が低下するため、例えばワイヤの座屈やそれに基づくボンディングワイヤ間でのショート等を抑制することが可能となる。   According to the method for manufacturing a semiconductor device according to the aspect of the present invention, the broken area of the wire can be reduced during the tail cut operation on the bump. As a result, the breaking strength of the wire is reduced, so that it is possible to suppress, for example, the buckling of the wire and a short circuit between bonding wires based on the buckling.

以下、本発明を実施するための形態について、図面を参照して説明する。なお、以下では本発明の実施形態を図面に基づいて説明するが、それらの図面は図解のために提供されるものであり、本発明はそれらの図面に限定されるものではない。   Hereinafter, embodiments for carrying out the present invention will be described with reference to the drawings. In addition, although embodiment of this invention is described based on drawing below, those drawings are provided for illustration and this invention is not limited to those drawings.

図１は本発明の実施形態による製造方法を適用して作製した半導体装置の構成例を示す断面図である。同図に示す半導体装置１は、素子搭載用の回路基材２を有している。素子搭載用の回路基材２は半導体素子を搭載することが可能で、かつ回路を有するものであればよい。このような回路基材２としては、絶縁基板や半導体基板等の表面や内部に回路を形成した回路基板、あるいはリードフレームのような素子搭載部と回路部とを一体化した基材等を用いることができる。   FIG. 1 is a cross-sectional view showing a configuration example of a semiconductor device manufactured by applying a manufacturing method according to an embodiment of the present invention. A semiconductor device 1 shown in the figure has a circuit substrate 2 for mounting elements. The circuit substrate 2 for element mounting may be any element that can mount a semiconductor element and has a circuit. As such a circuit base material 2, a circuit board in which a circuit is formed on the surface or inside of an insulating substrate or a semiconductor substrate, or a base material in which an element mounting portion such as a lead frame and a circuit portion are integrated is used. be able to.

図１に示す積層型半導体装置１は、素子搭載用回路基材２として回路基板を有している。回路基板２を構成する基板には、樹脂基板、セラミックス基板、ガラス基板等の絶縁基板、あるいは半導体基板等、各種の材料からなる基板を適用することができる。樹脂基板を適用した回路基板としては、一般的な多層銅張積層板（多層プリント配線板）等が挙げられる。回路基板２の上面（素子搭載面）側には、ワイヤボンディング時のボンディングパッドとなる接続パッド３が設けられている。   A stacked semiconductor device 1 shown in FIG. 1 has a circuit board as an element mounting circuit base 2. As the substrate constituting the circuit board 2, substrates made of various materials such as a resin substrate, a ceramic substrate, an insulating substrate such as a glass substrate, or a semiconductor substrate can be applied. Examples of the circuit board to which the resin substrate is applied include a general multilayer copper-clad laminate (multilayer printed wiring board). On the upper surface (element mounting surface) side of the circuit board 2, connection pads 3 are provided as bonding pads at the time of wire bonding.

このような回路基板２の上面には、半導体素子４が接着材層５を介して接着されている。半導体素子４の上面側にはボンディングパッドとなる電極パッド６が設けられており、この電極パッド６はリバースボンディングを適用したボンディングワイヤ７を介して回路基板２の接続パッド３と電気的に接続されている。   The semiconductor element 4 is bonded to the upper surface of the circuit board 2 through the adhesive layer 5. An electrode pad 6 serving as a bonding pad is provided on the upper surface side of the semiconductor element 4, and this electrode pad 6 is electrically connected to the connection pad 3 of the circuit board 2 through a bonding wire 7 to which reverse bonding is applied. ing.

ボンディングワイヤ７にリバースボンディングを適用するにあたって、半導体素子４の電極パッド６上には予めバンプ８が形成されている。ボンディングワイヤ７は回路基板２の接続パッド３上にボールボンディングされた後、電極パッド６上に形成されたバンプ８にステッチボンディングされている。図１において、７ａはボールボンディング部を示しており、７ｂはステッチボンディング部を示している。   When reverse bonding is applied to the bonding wire 7, bumps 8 are formed in advance on the electrode pads 6 of the semiconductor element 4. The bonding wires 7 are ball-bonded on the connection pads 3 of the circuit board 2 and then stitch-bonded to the bumps 8 formed on the electrode pads 6. In FIG. 1, reference numeral 7a denotes a ball bonding portion, and 7b denotes a stitch bonding portion.

上述した実施形態の半導体装置１は、例えば以下のようにして作製される。まず、回路基板２上に接着材層５を用いて半導体素子４を接着する。続いて、リバースボンディング工程を実施して、ボンディングワイヤ７で回路基板２の接続パッド３と半導体素子４の電極パッド６とを電気的に接続する。本発明の第１の実施形態による半導体装置の製造方法を適用したリバースボンディング工程について、以下に詳述する。まず、図２Ａないし図２Ｆを参照して、電極パッド６上へのバンプ８の形成工程について説明する。   The semiconductor device 1 according to the above-described embodiment is manufactured as follows, for example. First, the semiconductor element 4 is bonded onto the circuit board 2 using the adhesive layer 5. Subsequently, a reverse bonding process is performed to electrically connect the connection pads 3 of the circuit board 2 and the electrode pads 6 of the semiconductor element 4 with the bonding wires 7. The reverse bonding process to which the semiconductor device manufacturing method according to the first embodiment of the present invention is applied will be described in detail below. First, with reference to FIG. 2A thru | or FIG. 2F, the formation process of the bump 8 on the electrode pad 6 is demonstrated.

図２Ａに示すように、ボンディングツール（キャピラリ）１１に支持されたＡｕワイヤ等のワイヤ１２の先端に、Ａｕボール等のボール１３を形成する。次いで、図２Ｂに示すようにボール１３を電極パッド６に圧接し、さらにボール１３に荷重と超音波振動を加えて電極パッド６と接合（圧着）する。このように、ボール１３を電極パッド６に圧着することによってバンプ１４を形成する。ここで、ボンディングツール１１の先端にはチャンファ部１１ａが設けられており、このチャンファ部１１ａをボール１３に押し付けることでバンプ１４の形状（圧着されたボール１３の潰れ形状）等が制御される。   As shown in FIG. 2A, a ball 13 such as an Au ball is formed at the tip of a wire 12 such as an Au wire supported by a bonding tool (capillary) 11. Next, as shown in FIG. 2B, the ball 13 is pressed against the electrode pad 6, and further, a load and ultrasonic vibration are applied to the ball 13 to join (crimp) the electrode pad 6. Thus, the bumps 14 are formed by pressing the balls 13 to the electrode pads 6. Here, a chamfer part 11 a is provided at the tip of the bonding tool 11, and by pressing the chamfer part 11 a against the ball 13, the shape of the bump 14 (the collapsed shape of the pressure-bonded ball 13) and the like are controlled.

次に、図２Ｃに示すように、ボンディングツール１１を一旦上昇させてバンプ１４（圧着されたボール１３）のエッジ側に移動させた後、ボンディングツール１１をバンプ１４に押し付ける。このボンディングツール１１によるバンプ１４の加圧工程（圧着されたボール１３の再加圧工程）は、例えばバンプ１４に傾斜面を形成してリバースボンディング性等を高める工程であり、必要に応じて実施されるものである。従って、バンプ１４の加圧工程を実施することなく、後述するテールカット工程を実施してもよい。   Next, as shown in FIG. 2C, the bonding tool 11 is once raised and moved to the edge side of the bump 14 (crimped ball 13), and then the bonding tool 11 is pressed against the bump 14. The pressurizing step of the bump 14 by the bonding tool 11 (repressurizing step of the pressure-bonded ball 13) is, for example, a step of forming an inclined surface on the bump 14 to improve reverse bonding property and the like. It is what is done. Therefore, a tail cut process described later may be performed without performing the pressing process of the bumps 14.

上記したバンプ１４の加圧工程を実施しても、ワイヤ１２の下部にはバンプ１４が存在しているため、ワイヤ１２がバンプ１４に圧接されることによって、テールカット動作時におけるワイヤ１２の破断面積を十分に小さくすることはできない。図３にバンプ１４の加圧工程を実施した後のバンプ１４とワイヤ１２との接続部分を平面方向に切断した断面図を示す。図３において、領域Ｘ1はバンプ１４とワイヤ１２との接続面積、すなわちテールカット動作時のワイヤ１２の破断に要する面積（要破断面積）を示している。   Even when the above-described pressing process of the bump 14 is performed, the bump 14 exists under the wire 12, so that the wire 12 is pressed against the bump 14, thereby breaking the wire 12 during the tail cut operation. The area cannot be made sufficiently small. FIG. 3 shows a cross-sectional view in which the connecting portion between the bump 14 and the wire 12 after the bump 14 pressing step is cut in the plane direction. In FIG. 3, a region X1 indicates a connection area between the bump 14 and the wire 12, that is, an area required for breaking the wire 12 during the tail cutting operation (required breaking area).

図３から明らかなように、バンプ１４の加圧工程を実施しただけでは、ワイヤ１２の要破断面積を十分に小さくすることはできない。さらに、テールカット動作時のワイヤ１２の要破断面積はボンディングツール１１のチャンファ部１１ａの位置と密接に関係していることが分かる。そこで、この実施形態においては、図２Ｄおよび図４に示すように、ボンディングツール１１によるバンプ１４への加圧状態を維持しつつ、ボンディングツール１１を水平方向に移動させる。ボンディングツール１１はワイヤ１２をバンプ１４から遠ざける方向、すなわちチャンファ部１１ａがバンプ１４から遠ざかる方向（バンプ１４のエッジ方向もしくはエッジの外側方向）に移動させる。   As is clear from FIG. 3, the required breaking area of the wire 12 cannot be sufficiently reduced only by performing the pressing process of the bumps 14. Furthermore, it can be seen that the required breaking area of the wire 12 during the tail-cut operation is closely related to the position of the chamfer portion 11 a of the bonding tool 11. Therefore, in this embodiment, as shown in FIGS. 2D and 4, the bonding tool 11 is moved in the horizontal direction while maintaining the pressure applied to the bumps 14 by the bonding tool 11. The bonding tool 11 moves the wire 12 in a direction away from the bump 14, that is, a direction in which the chamfer portion 11 a moves away from the bump 14 (the edge direction of the bump 14 or the outer side of the edge).

上述したように、バンプ１４への加圧状態を維持したままボンディングツール１１を水平方向に移動させることによって、ワイヤ１２の要破断面積（図４における領域Ｘ2の面積）を小さくすることが可能となる。ワイヤ１２の要破断面積を減少させるにあたって、バンプ１４（もしくはボール１３）をボンディングツール１１で加圧した後、ボンディングツール１１を垂直方向に移動させることなく水平移動させることが重要である。ボンディングツール１１を一旦上昇させて水平移動させた後に加圧しても、ワイヤ１２を再度バンプ１４に押し付けることになるため、バンプ１４の水平方向への変形に基づいてワイヤ１２の要破断面積を十分に小さくすることができない。   As described above, by moving the bonding tool 11 in the horizontal direction while maintaining the pressure applied to the bumps 14, it is possible to reduce the required breaking area of the wire 12 (area X2 in FIG. 4). Become. In order to reduce the required breaking area of the wire 12, it is important that the bump 14 (or the ball 13) is pressed by the bonding tool 11 and then moved horizontally without moving the bonding tool 11 in the vertical direction. Even if the bonding tool 11 is raised and moved horizontally and then pressed, the wire 12 is pressed against the bump 14 again, so that the required breaking area of the wire 12 is sufficiently large based on the deformation of the bump 14 in the horizontal direction. Cannot be made smaller.

これに対して、バンプ１４への加圧状態を維持したままボンディングツール１１を水平方向に移動させることで、ワイヤ１２とバンプ１４との接続部分を直接的に変形させることができるため、ワイヤ１２の要破断面積（バンプ１４との接続面積）を減少させることが可能となる。ボンディングツール１１の水平移動方向は、ワイヤ１２の要破断面積を小さくする方向であれば特に限定されるものではなく、例えば図５に示すようにボンディングツール１１を斜め方向に水平移動させてもよい。   On the other hand, the connecting portion between the wire 12 and the bump 14 can be directly deformed by moving the bonding tool 11 in the horizontal direction while maintaining the pressure applied to the bump 14. It is possible to reduce the required breaking area (connection area with the bump 14). The horizontal movement direction of the bonding tool 11 is not particularly limited as long as the required breaking area of the wire 12 is reduced. For example, the bonding tool 11 may be moved horizontally in an oblique direction as shown in FIG. .

図４はバンプ１４とチャンファ部１１ａの中心を通る直線に対してチャンファ部１１ａを平行に水平移動させた状態を示している。図５はバンプ１４とチャンファ部１１ａの中心を通る直線に対してチャンファ部１１ａを斜め45°方向に水平移動させた状態を示している。このように、ボンディングツール１１の水平移動方向は、ワイヤ１２の要破断面積を小さくする方向（例えばバンプ１４とチャンファ部１１ａの中心を通る直線を基準とした場合、その直線の両側にそれぞれ90°の範囲内）であればよい。また、ボンディングツール１１を水平方向に移動させるにあたって、高さ方向の動作制御は荷重設定制御および高さ位置設定制御のいずれによって実施してもよい。   FIG. 4 shows a state in which the chamfer portion 11a is horizontally moved parallel to a straight line passing through the bump 14 and the center of the chamfer portion 11a. FIG. 5 shows a state in which the chamfer 11a is horizontally moved in a 45 ° oblique direction with respect to a straight line passing through the center of the bump 14 and the chamfer 11a. As described above, the horizontal movement direction of the bonding tool 11 is the direction in which the required breaking area of the wire 12 is reduced (for example, when a straight line passing through the center of the bump 14 and the chamfer portion 11a is used as a reference, 90 ° on both sides of the straight line). Within the range). Further, when the bonding tool 11 is moved in the horizontal direction, the operation control in the height direction may be performed by either load setting control or height position setting control.

ワイヤ１２の要破断面積の減少量は、ボンディングツール１１の移動量、具体的にはチャンファ部１１ａの水平方向への移動量に対応する。チャンファ部１１ａの移動量を大きくするほどワイヤ１２の要破断面積は小さくなるが、チャンファ部１１ａがバンプ１４の外周から外れるほど移動させると、その時点でワイヤ１２が破断してテールの形成が困難になるおそれがある。このため、ボンディングツール１１の水平方向への移動量は、チャンファ部１１ａの一部がバンプ１４と重なった状態を維持するように設定することが好ましい。この範囲内であればワイヤ１２の径等に応じて適宜に設定可能である。   The amount of reduction in the required breaking area of the wire 12 corresponds to the amount of movement of the bonding tool 11, specifically, the amount of movement of the chamfer portion 11a in the horizontal direction. As the amount of movement of the chamfer portion 11a is increased, the required breaking area of the wire 12 is reduced. However, if the chamfer portion 11a is moved away from the outer periphery of the bump 14, the wire 12 is broken at that time and it is difficult to form a tail. There is a risk of becoming. For this reason, it is preferable that the amount of movement of the bonding tool 11 in the horizontal direction is set so as to maintain a state where a part of the chamfer portion 11 a overlaps the bump 14. Within this range, it can be set appropriately according to the diameter of the wire 12 and the like.

さらに、ボンディングツール１１の水平移動工程を実施するにあたって、図２Ｄに示したようにワイヤ１２を一旦クランパ１５でクランプし、この状態でボンディングツール１１を水平方向に移動させることが好ましい。このように、ワイヤ１２をクランパ１５でクランプした状態でボンディングツール１１を水平移動させることによって、この水平移動時にワイヤ１２が繰り出されることがないため、ワイヤ１２とバンプ１４との接続部分をより確実に変形させることができる。すなわち、ワイヤ１２の要破断面積をより確実に小さくすることが可能となる。   Furthermore, when performing the horizontal movement process of the bonding tool 11, it is preferable that the wire 12 is once clamped by the clamper 15 as shown in FIG. 2D and the bonding tool 11 is moved in the horizontal direction in this state. In this way, by horizontally moving the bonding tool 11 while the wire 12 is clamped by the clamper 15, the wire 12 is not drawn out during the horizontal movement, so that the connection portion between the wire 12 and the bump 14 can be more reliably provided. Can be transformed into That is, the required breaking area of the wire 12 can be more reliably reduced.

次に、図２Ｅに示すように、ワイヤ１２のクランパ１５によるクランプ状態を一旦解除した後、ボンディングツール１１を上昇させてワイヤ１２を一定量繰り出すことによってテール部１２ａを形成する。この後、図２Ｆに示すように、ワイヤ１２をクランパ１５でクランプした状態で引き上げることによって、ワイヤ１２を切断してバンプ１４（８）を形成する。上述したように、ワイヤ１２とバンプ１４との接続面積、すなわちワイヤ１２の要破断面積はボンディングツール１１の水平移動工程に基づいて十分に減少されているため、ワイヤ１２の破断強度を低下させることができる。   Next, as shown in FIG. 2E, after the clamp state of the wire 12 by the clamper 15 is once released, the bonding tool 11 is raised and the wire 12 is fed out by a predetermined amount to form the tail portion 12a. Thereafter, as shown in FIG. 2F, the wire 12 is pulled up with the wire 12 clamped by the clamper 15, thereby cutting the wire 12 to form the bump 14 (8). As described above, the connection area between the wire 12 and the bump 14, that is, the required breaking area of the wire 12 is sufficiently reduced based on the horizontal movement process of the bonding tool 11, thereby reducing the breaking strength of the wire 12. Can do.

このように、ワイヤ１２のテールカット動作時の直前に破断面積を減少させることによって、テールカット動作時におけるワイヤ１２の破断強度を低下させることができる。これによって、バンプ１４からのワイヤ１２の破断強度がクランパ１５より下方に位置するワイヤ１２やバンプ１４に及ぼす悪影響を抑制することが可能となる。具体的には、テール部１２ａを含むワイヤ１２の座屈（ワイヤ１２の曲がり）やそれに基づく後工程での不良発生等を抑制することができる。   Thus, by reducing the breaking area immediately before the tail cutting operation of the wire 12, the breaking strength of the wire 12 during the tail cutting operation can be reduced. Thereby, it is possible to suppress the adverse effect of the breaking strength of the wire 12 from the bump 14 on the wire 12 and the bump 14 positioned below the clamper 15. Specifically, buckling of the wire 12 including the tail portion 12a (bending of the wire 12), occurrence of defects in a subsequent process based on the buckling, and the like can be suppressed.

なお、ここでは本発明の実施形態をリバースボンディングに使用するバンプ８の形成に適用した例について説明したが、本発明はこれに限られるものではなく、ワイヤのテールカット動作を伴う各種バンプの形成に適用することができる。また、バンプの形成位置は半導体素子の電極パッド（ボンディングパッド）上に限られるものではなく、回路基材のボンディングパッド上であってもよい。さらに、バンプの形状は1層構造に限らず、複数のバンプを多段に積み重ねた多段バンプ等であってもよい。   Here, the example in which the embodiment of the present invention is applied to the formation of the bump 8 used for the reverse bonding has been described. However, the present invention is not limited to this, and various bump formations involving the tail cut operation of the wire are performed. Can be applied to. The bump formation position is not limited to the electrode pad (bonding pad) of the semiconductor element, but may be on the bonding pad of the circuit substrate. Furthermore, the shape of the bump is not limited to a single layer structure, and may be a multi-stage bump in which a plurality of bumps are stacked in multiple stages.

次に、半導体素子４の電極パッド６上に形成したバンプ８を利用したリバースボンディング工程について、図６Ａおよび図６Ｂを参照して説明する。ここでは本発明の第２の実施形態による半導体装置の製造方法を適用したリバースボンディング工程について詳述する。まず、図２Ａと同様にして、ボンディングツール１１に支持されたワイヤ１２の先端にボール１３を形成し、これを回路基板２の接続パッド３上にボールボンディングする。ボールボンディング工程は通常工程と同様に荷重と超音波振動を加えて実施する。   Next, the reverse bonding process using the bumps 8 formed on the electrode pads 6 of the semiconductor element 4 will be described with reference to FIGS. 6A and 6B. Here, the reverse bonding process to which the semiconductor device manufacturing method according to the second embodiment of the present invention is applied will be described in detail. First, in the same manner as in FIG. 2A, a ball 13 is formed on the tip of a wire 12 supported by a bonding tool 11, and this is ball-bonded on the connection pad 3 of the circuit board 2. The ball bonding process is performed by applying a load and ultrasonic vibration as in the normal process.

続いて、ボンディングツール１１からワイヤ１２を繰り出してワイヤリングしつつ、ボンディングツール１１を電極パッド６上のバンプ８の上方に移動させる。次いで、図６Ａに示すように、ワイヤ１２をバンプ８にステッチボンディングする。ステッチボンディングは通常工程と同様に荷重と超音波振動を加えて実施する。ここで、ワイヤ１２をステッチボンディングするにあたって、ボンディングツール１１をバンプ８のエッジ側に加圧したとしても、前述したバンプ１４（８）の形成工程と同様に、ワイヤ１２の要破断面積を十分に小さくすることはできない。   Subsequently, the bonding tool 11 is moved above the bump 8 on the electrode pad 6 while the wire 12 is drawn out from the bonding tool 11 and wired. Next, as shown in FIG. 6A, the wire 12 is stitch bonded to the bump 8. Stitch bonding is performed by applying a load and ultrasonic vibration as in the normal process. Here, even when the bonding tool 11 is pressed to the edge side of the bump 8 when the wire 12 is stitch-bonded, the required breaking area of the wire 12 can be sufficiently increased as in the bump 14 (8) forming process described above. It cannot be made smaller.

すなわち、ワイヤ１２の下部にはバンプ８が存在しているため、ステッチボンディング時にボンディングツール１１でワイヤ１２を加圧すると、バンプ８自体の形状が変形する。このため、ワイヤ１２の要破断面積を十分に小さくすることはできない。図７にステッチボンディング工程後のバンプ８とワイヤ１２との接合部を一部断面で示す。図７において、領域Ｙ1はテールカット動作時のワイヤ１２の要破断面積を示している。このように、ボンディングツール１１をバンプ８のエッジ側に加圧したとしても、ワイヤ１２をバンプ８にステッチボンディングしただけでは、ワイヤ１２の要破断面積は大きくなる。   That is, since the bumps 8 are present under the wires 12, when the wires 12 are pressed with the bonding tool 11 during stitch bonding, the shape of the bumps 8 themselves is deformed. For this reason, the required breaking area of the wire 12 cannot be made sufficiently small. FIG. 7 is a partial cross-sectional view showing a joint portion between the bump 8 and the wire 12 after the stitch bonding process. In FIG. 7, a region Y1 indicates a required breaking area of the wire 12 during the tail cut operation. As described above, even if the bonding tool 11 is pressed to the edge side of the bump 8, the required breaking area of the wire 12 increases only by stitch bonding the wire 12 to the bump 8.

そこで、この実施形態においては、図６Ｂおよび図８に示すように、ボンディングツール１１によるワイヤ１２への加圧状態を維持しつつ、ボンディングツール１１のチャンファ部１１ａを水平方向に移動させる。ボンディングツール１１はワイヤリングしたワイヤ１２（ボンディングワイヤ７）とは反対方向、すなわちワイヤ１２をワイヤリングした方向に沿って移動させる。このように、ワイヤ１２への加圧状態を維持したままボンディングツール１１を水平方向に移動させることによって、ワイヤ１２の要破断面積（図８における領域Ｙ2の面積）を十分に小さくすることが可能となる。   Therefore, in this embodiment, as shown in FIGS. 6B and 8, the chamfer portion 11 a of the bonding tool 11 is moved in the horizontal direction while maintaining the pressure applied to the wire 12 by the bonding tool 11. The bonding tool 11 moves in the direction opposite to the wired wire 12 (bonding wire 7), that is, along the direction in which the wire 12 is wired. In this way, by moving the bonding tool 11 in the horizontal direction while maintaining the pressure applied to the wire 12, the required breaking area of the wire 12 (area Y2 in FIG. 8) can be made sufficiently small. It becomes.

この際、バンプ１４（８）の形成工程と同様に、ボンディングツール１１でワイヤ１２を加圧した後、垂直方向に移動させることなく水平移動させることが重要である。これによって、ワイヤ１２とバンプ８との接合部を直接的に変形させることができるため、ワイヤ１２の要破断面積を減少させることが可能となる。ステッチボンディング後におけるボンディングツール１１の水平移動方向は、ワイヤ１２の要破断面積を小さくする方向であれば特に限定されるものではなく、例えば図９に示すようにボンディングツール１１を斜め方向に水平移動させてもよい。   At this time, as in the bump 14 (8) formation process, it is important that the wire 12 is pressed with the bonding tool 11 and then moved horizontally without moving in the vertical direction. As a result, the joint between the wire 12 and the bump 8 can be directly deformed, so that the required breaking area of the wire 12 can be reduced. The horizontal movement direction of the bonding tool 11 after the stitch bonding is not particularly limited as long as the required breaking area of the wire 12 is reduced. For example, as shown in FIG. 9, the bonding tool 11 is moved horizontally in an oblique direction. You may let them.

図８はバンプ８とチャンファ部１１ａの中心を通る直線に対してチャンファ部１１ａを平行に水平移動させた状態を示している。図９はバンプ８とチャンファ部１１ａの中心を通る直線に対してチャンファ部１１ａを斜め45°方向に水平移動させた状態を示している。このように、ボンディングツール１１の水平移動方向は、ワイヤ１２の要破断面積を小さくする方向（例えばバンプ８とチャンファ部１１ａの中心を通る直線を基準とした場合、その直線の両側にそれぞれ90°の範囲内）であればよい。また、ボンディングツール１１を水平方向に移動させるにあたって、高さ方向の動作制御はバンプ８の形成工程と同様に、荷重設定制御および高さ位置設定制御のいずれによって実施してもよい。   FIG. 8 shows a state in which the chamfer portion 11a is horizontally moved in parallel with a straight line passing through the bump 8 and the center of the chamfer portion 11a. FIG. 9 shows a state in which the chamfer portion 11a is horizontally moved in a 45 ° oblique direction with respect to a straight line passing through the bump 8 and the center of the chamfer portion 11a. As described above, the horizontal movement direction of the bonding tool 11 is the direction in which the required breaking area of the wire 12 is reduced (for example, 90 ° on both sides of the straight line passing through the center of the bump 8 and the chamfer portion 11a). Within the range). Further, when the bonding tool 11 is moved in the horizontal direction, the operation control in the height direction may be performed by either load setting control or height position setting control, as in the bump 8 forming process.

ワイヤ１２の要破断面積の減少量は、ボンディングツール１１の移動量、具体的にはチャンファ部１１ａの水平方向への移動量に対応する。チャンファ部１１ａの移動量を大きくするほどワイヤ１２の要破断面積は小さくなるが、チャンファ部１１ａがバンプ８の外周から外れるほど移動させると、その時点でワイヤ１２が破断してテールの形成が困難になるおそれがある。このため、ボンディングツール１１の水平方向への移動量は、チャンファ部１１ａの一部がバンプ８と重なった状態を維持するように設定することが好ましい。この範囲内であればワイヤ１２の径等に応じて適宜に設定可能である。   The amount of reduction in the required breaking area of the wire 12 corresponds to the amount of movement of the bonding tool 11, specifically, the amount of movement of the chamfer portion 11a in the horizontal direction. As the amount of movement of the chamfer portion 11a is increased, the required breaking area of the wire 12 is reduced. However, if the chamfer portion 11a is moved away from the outer periphery of the bump 8, the wire 12 is broken at that time and it is difficult to form a tail. There is a risk of becoming. For this reason, the amount of movement of the bonding tool 11 in the horizontal direction is preferably set so as to maintain a state in which a part of the chamfer portion 11 a overlaps the bump 8. Within this range, it can be set appropriately according to the diameter of the wire 12 and the like.

さらに、ボンディングツール１１の水平移動工程を実施するにあたって、図６Ｂに示したようにワイヤ１２を一旦クランパ１５でクランプし、この状態でボンディングツール１１を水平方向に移動させることが好ましい。このように、ワイヤ１２をクランパ１５でクランプした状態でボンディングツール１１を水平方向に移動させることによって、この水平移動時にワイヤ１２が繰り出されることがないため、ワイヤ１２の要破断面積をより確実に減少させることが可能となる。   Furthermore, when performing the horizontal movement process of the bonding tool 11, it is preferable that the wire 12 is temporarily clamped by the clamper 15 as shown in FIG. 6B and the bonding tool 11 is moved in the horizontal direction in this state. In this way, by moving the bonding tool 11 in the horizontal direction with the wire 12 clamped by the clamper 15, the wire 12 is not drawn out during this horizontal movement, so that the required breaking area of the wire 12 is more reliably secured. It becomes possible to decrease.

次に、バンプ８の形成工程と同様に、ワイヤ１２のクランパ１５によるクランプ状態を一旦解除した後、ボンディングツール１１を上昇させてワイヤ１２を一定量繰り出してテール部を形成する。この後、ワイヤ１２をクランパ１５でクランプした状態で引き上げることによって、ワイヤ１２を切断してボンディングワイヤ７を形成する。上述したように、ワイヤ１２の要破断面積はボンディングツール１１の水平移動工程に基づいて十分に減少しているため、テールカット動作時におけるワイヤ１２の破断強度を低下させることができる。従って、ワイヤ１２の破断強度がクランパ１５より下方に位置するワイヤ１２に及ぼす悪影響を抑制することが可能となる。   Next, as in the bump 8 formation process, after the clamp state of the wire 12 by the clamper 15 is once released, the bonding tool 11 is raised and the wire 12 is fed out by a predetermined amount to form the tail portion. Thereafter, the wire 12 is pulled up in a state of being clamped by the clamper 15 to cut the wire 12 to form the bonding wire 7. As described above, since the required breaking area of the wire 12 is sufficiently reduced based on the horizontal movement process of the bonding tool 11, the breaking strength of the wire 12 during the tail cut operation can be reduced. Therefore, it is possible to suppress the adverse effect of the breaking strength of the wire 12 on the wire 12 positioned below the clamper 15.

具体的には、テール部を含むワイヤ１２の座屈を抑制することができる。クランパ１５より下方のワイヤ１２に座屈が生じると、この座屈による曲がりが次のボンディングワイヤに現れるため、隣接した異電位ボンディングワイヤとの間でショートが生じやすくなる。この実施形態ではワイヤ１２の破断面積を小さくして破断強度を低下させているため、ワイヤ１２に座屈を生じさせるおそれが大幅に減少する。従って、ワイヤ１２の座屈によるボンディングワイヤ７間でのショート等を有効に抑制することが可能となる。   Specifically, buckling of the wire 12 including the tail portion can be suppressed. When the wire 12 below the clamper 15 is buckled, bending due to this buckling appears in the next bonding wire, so that a short circuit is likely to occur between adjacent different potential bonding wires. In this embodiment, since the breaking area of the wire 12 is reduced to reduce the breaking strength, the possibility of causing buckling of the wire 12 is greatly reduced. Accordingly, it is possible to effectively suppress a short circuit between the bonding wires 7 due to the buckling of the wire 12.

上述した本発明の実施形態によれば、半導体素子４の電極パッド６上へのバンプ８の形成工程やリバースボンディングにおけるバンプ８へのステッチボンディング工程等のバンプ８上でのテールカット動作を伴う工程において、テールカット時のワイヤ１２の破断面積を小さくして破断強度を低下させているため、ワイヤ１２を適切な引張り力で切断することができる。従って、テールカット動作に伴うワイヤ１２の座屈等を抑制することができ、半導体装置１の製造歩留りや信頼性等を高めることが可能となる。   According to the embodiment of the present invention described above, a process involving a tail cut operation on the bump 8 such as a process of forming the bump 8 on the electrode pad 6 of the semiconductor element 4 or a stitch bonding process to the bump 8 in reverse bonding. In FIG. 2, since the breaking area of the wire 12 at the tail cut is reduced to reduce the breaking strength, the wire 12 can be cut with an appropriate tensile force. Therefore, buckling or the like of the wire 12 accompanying the tail cut operation can be suppressed, and the manufacturing yield and reliability of the semiconductor device 1 can be improved.

なお、ここでは本発明の半導体装置の製造方法を、リバースボンディングを適用した半導体装置の製造に適用した実施形態について説明したが、本発明はこれに限られるものではなく、半導体素子や回路基材のボンディングパッド上へのバンプの形成工程やバンプへのステッチボンディング工程のようなバンプ上でのテールカット動作を伴う工程を含む半導体装置の製造工程に適用可能である。また、半導体装置の構成も特に限定されるものではなく、複数の半導体素子を積層して構成した半導体装置の製造工程等にも、本発明を適用可能であることは言うまでもない。さらに、本発明の実施形態は本発明の技術的思想の範囲内で拡張もしくは変更することができ、この拡張、変更した実施形態も本発明の技術的範囲に含まれるものである。   Here, the embodiment in which the method for manufacturing a semiconductor device of the present invention is applied to the manufacture of a semiconductor device to which reverse bonding is applied has been described. However, the present invention is not limited to this, and a semiconductor element or circuit substrate is used. The present invention can be applied to a semiconductor device manufacturing process including a process involving tail-cut operation on a bump such as a bump forming process on the bonding pad and a stitch bonding process to the bump. Further, the configuration of the semiconductor device is not particularly limited, and it is needless to say that the present invention can be applied to a manufacturing process of a semiconductor device configured by stacking a plurality of semiconductor elements. Furthermore, the embodiments of the present invention can be expanded or modified within the scope of the technical idea of the present invention, and these expanded and modified embodiments are also included in the technical scope of the present invention.

本発明の実施形態による製造方法を適用して作製した半導体装置の構成を示す図である。It is a figure which shows the structure of the semiconductor device produced by applying the manufacturing method by embodiment of this invention. 図１に示す半導体装置の製造工程を示す図であって、ワイヤ先端へのボール形成工程を示す断面図である。It is a figure which shows the manufacturing process of the semiconductor device shown in FIG. 1, Comprising: It is sectional drawing which shows the ball | bowl formation process to the wire tip. 図１に示す半導体装置の製造工程を示す図であって、電極パッド上へのボールの圧着工程を示す断面図である。It is a figure which shows the manufacturing process of the semiconductor device shown in FIG. 1, Comprising: It is sectional drawing which shows the crimping | compression-bonding process of the ball | bowl on an electrode pad. 図１に示す半導体装置の製造工程を示す図であって、圧着したボールの再加圧工程を示す断面図である。It is a figure which shows the manufacturing process of the semiconductor device shown in FIG. 1, Comprising: It is sectional drawing which shows the re-pressurization process of the pressure-bonded ball | bowl. 図１に示す半導体装置の製造工程を示す図であって、ボンディングツールの水平移動工程を示す断面図である。It is a figure which shows the manufacturing process of the semiconductor device shown in FIG. 1, Comprising: It is sectional drawing which shows the horizontal movement process of a bonding tool. 図１に示す半導体装置の製造工程を示す図であって、ワイヤのテール形成工程を示す断面図である。FIG. 3 is a diagram showing a manufacturing process of the semiconductor device shown in FIG. 1 and a cross-sectional view showing a wire tail forming process. 図１に示す半導体装置の製造工程を示す図であって、ワイヤの切断工程を示す断面図である。It is a figure which shows the manufacturing process of the semiconductor device shown in FIG. 1, Comprising: It is sectional drawing which shows the cutting process of a wire. 圧着ボールの再加圧工程後におけるワイヤの要破断面積を示す図である。It is a figure which shows the required fracture area of the wire after the re-pressurization process of a press-bonded ball. バンプ形成工程におけるボンディングツールの水平移動工程および工程後のワイヤの要破断面積を示す図である。It is a figure which shows the horizontal movement process of the bonding tool in a bump formation process, and the fracture required area of the wire after a process. 図４に示すボンディングツールの水平移動工程の変形例を示す図である。It is a figure which shows the modification of the horizontal movement process of the bonding tool shown in FIG. 図１に示す半導体装置の製造工程を示す図であって、バンプ上へのワイヤのステッチボンディング工程を示す断面図である。It is a figure which shows the manufacturing process of the semiconductor device shown in FIG. 1, Comprising: It is sectional drawing which shows the stitch bonding process of the wire on a bump. 図１に示す半導体装置の製造工程を示す図であって、ボンディングツールの水平移動工程を示す断面図である。It is a figure which shows the manufacturing process of the semiconductor device shown in FIG. 1, Comprising: It is sectional drawing which shows the horizontal movement process of a bonding tool. ワイヤのステッチボンディング工程後におけるワイヤの要破断面積を示す図である。It is a figure which shows the breakable area required of the wire after the stitch bonding process of a wire. ステッチボンディング工程におけるボンディングツールの水平移動工程および工程後のワイヤの要破断面積を示す図である。It is a figure which shows the horizontal movement process of the bonding tool in a stitch bonding process, and the breakable area of the wire after a process. 図８に示すボンディングツールの水平移動工程の変形例を示す図である。It is a figure which shows the modification of the horizontal movement process of the bonding tool shown in FIG.

符号の説明Explanation of symbols

１…半導体装置、２…回路基板、３…接続パッド、４…半導体素子、６…電極パッド、７…ボンディングワイヤ、８，１４…バンプ、１１…ボンディングツール、１１ａ…チャンファ部、１２…ワイヤ、１２ａ…テール部、１３…ボール、１５…クランパ。   DESCRIPTION OF SYMBOLS 1 ... Semiconductor device, 2 ... Circuit board, 3 ... Connection pad, 4 ... Semiconductor element, 6 ... Electrode pad, 7 ... Bonding wire, 8, 14 ... Bump, 11 ... Bonding tool, 11a ... Chamfer part, 12 ... Wire, 12a ... tail part, 13 ... ball, 15 ... clamper.

Claims (5)

ボンディングツールに支持されたワイヤの先端にボールを形成する工程と、
前記ワイヤの先端に形成された前記ボールを回路基材または半導体素子のボンディングパッド上に圧着して接合する工程と、
前記ボンディングパッド上に接合された前記ボールへの加圧状態を維持しつつ、前記ボンディングツールを水平方向に移動させる工程と、
前記ボンディングツールを上昇させて前記ワイヤを繰り出す工程と、
前記ワイヤをクランプした状態で引き上げて切断し、前記ボンディングパッド上にバンプを形成する工程と
を具備することを特徴とする半導体装置の製造方法。 Forming a ball at the tip of the wire supported by the bonding tool;
A step of crimping and bonding the ball formed on the tip of the wire onto a bonding pad of a circuit substrate or a semiconductor element;
Moving the bonding tool in a horizontal direction while maintaining a pressure state on the ball bonded on the bonding pad;
Raising the bonding tool and feeding the wire;
And a step of forming a bump on the bonding pad by pulling up and cutting the wire in a clamped state. 請求項１記載の半導体装置の製造方法において、
前記ボールの圧着工程後に前記ボンディングツールを一旦上昇させて前記ボールのエッジ側に移動させ、前記ボンディングツールを前記ボールに押し付けた後、この加圧状態を維持しつつ前記ボンディングツールの水平移動工程を実施することを特徴とする半導体装置の製造方法。 In the manufacturing method of the semiconductor device according to claim 1,
After the bonding step of the ball, the bonding tool is temporarily raised and moved to the edge side of the ball, and after the bonding tool is pressed against the ball, the bonding tool is horizontally moved while maintaining the pressure state. A method for manufacturing a semiconductor device, comprising: 請求項１または請求項２記載の半導体装置の製造方法において、
前記バンプを前記半導体素子のボンディングパッド上に形成する工程と、
前記ボンディングツールに支持された前記ワイヤの先端にボールを形成する工程と、
前記ワイヤの先端に形成された前記ボールを、前記回路基材のボンディングパッド上にボールボンディングする工程と、
前記ワイヤを繰り出してワイヤリングしつつ、前記ボンディングツールを前記バンプ上に移動させる工程と、
前記ワイヤを前記バンプにステッチボンディングする工程と、
前記バンプにステッチボンディングされた前記ワイヤへの加圧状態を維持しつつ、前記ボンディングツールを水平方向に移動させる工程と、
前記ボンディングツールを上昇させて前記ワイヤを繰り出す工程と、
前記ワイヤをクランプした状態で引き上げて切断する工程と
を具備することを特徴とする半導体装置の製造方法。 In the manufacturing method of the semiconductor device of Claim 1 or Claim 2,
Forming the bump on a bonding pad of the semiconductor element;
Forming a ball at the tip of the wire supported by the bonding tool;
Ball bonding the ball formed at the tip of the wire onto a bonding pad of the circuit substrate;
Moving the bonding tool onto the bumps while unwinding and wiring the wire; and
Stitch bonding the wire to the bump;
The step of moving the bonding tool in a horizontal direction while maintaining a pressure state on the wire stitch-bonded to the bump,
Raising the bonding tool and feeding the wire;
And a step of pulling and cutting the wire in a clamped state. 半導体素子のボンディングパッド上にバンプを形成する工程と、
ボンディングツールに支持されたワイヤの先端にボールを形成する工程と、
前記ワイヤの先端に形成されたボールを、回路基材のボンディングパッド上にボールボンディングする工程と、
前記ワイヤを繰り出してワイヤリングしつつ、前記ボンディングツールを前記バンプ上に移動させる工程と、
前記ワイヤを前記バンプにステッチボンディングする工程と、
前記バンプにステッチボンディングされた前記ワイヤへの加圧状態を維持しつつ、前記ボンディングツールを水平方向に移動させる工程と、
前記ボンディングツールを上昇させて前記ワイヤを繰り出す工程と、
前記ワイヤをクランプした状態で引き上げて切断する工程と
を具備することを特徴とする半導体装置の製造方法。 Forming a bump on a bonding pad of a semiconductor element;
Forming a ball at the tip of the wire supported by the bonding tool;
Ball bonding the ball formed on the tip of the wire on the bonding pad of the circuit substrate;
Moving the bonding tool onto the bumps while unwinding and wiring the wire; and
Stitch bonding the wire to the bump;
The step of moving the bonding tool in a horizontal direction while maintaining a pressure state on the wire stitch-bonded to the bump,
Raising the bonding tool and feeding the wire;
And a step of pulling and cutting the wire in a clamped state. 請求項１ないし請求項４のいずれか１項記載の半導体装置の製造方法において、
前記ワイヤをクランプした状態で前記ボンディングツールの水平移動工程を実施し、前記ワイヤのクランプを解除した後に前記ボンディングツールを上昇させて前記ワイヤを繰り出すことを特徴とする半導体装置の製造方法。 In the manufacturing method of the semiconductor device of any one of Claims 1 thru | or 4,
A method of manufacturing a semiconductor device, comprising: performing a horizontal movement step of the bonding tool in a state where the wire is clamped, lifting the bonding tool and releasing the wire after releasing the clamp of the wire.
JP2006085472A 2006-03-27 2006-03-27 Process for manufacturing semiconductor device Withdrawn JP2007266062A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2006085472A JP2007266062A (en) 2006-03-27 2006-03-27 Process for manufacturing semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2006085472A JP2007266062A (en) 2006-03-27 2006-03-27 Process for manufacturing semiconductor device

Publications (1)

Publication Number Publication Date
JP2007266062A true JP2007266062A (en) 2007-10-11

Family

ID=38638803

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2006085472A Withdrawn JP2007266062A (en) 2006-03-27 2006-03-27 Process for manufacturing semiconductor device

Country Status (1)

Country Link
JP (1) JP2007266062A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010067786A (en) * 2008-09-10 2010-03-25 Kaijo Corp Wire bonding method, wire bonding apparatus, and wire bonding control program
JP2011222813A (en) * 2010-04-12 2011-11-04 Denso Corp Wire bonding method
JP2012523118A (en) * 2009-04-01 2012-09-27 クリック アンド ソッファ インダストリーズ、インク． Conductive bumps, wire loops, and methods of forming them

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010067786A (en) * 2008-09-10 2010-03-25 Kaijo Corp Wire bonding method, wire bonding apparatus, and wire bonding control program
JP4625858B2 (en) * 2008-09-10 2011-02-02 株式会社カイジョー Wire bonding method, wire bonding apparatus, and wire bonding control program
JP2012523118A (en) * 2009-04-01 2012-09-27 クリック アンド ソッファ インダストリーズ、インク． Conductive bumps, wire loops, and methods of forming them
TWI511209B (en) * 2009-04-01 2015-12-01 Kulicke & Soffa Ind Inc Conductive bumps, wire loops, and methods of forming the same
JP2011222813A (en) * 2010-04-12 2011-11-04 Denso Corp Wire bonding method

Similar Documents

Publication Publication Date Title
JP4823089B2 (en) Manufacturing method of stacked semiconductor device
JP4298665B2 (en) Wire bonding method
JP4397408B2 (en) Semiconductor device and wire bonding method
JP5714195B2 (en) Manufacturing method of semiconductor device
JP4860128B2 (en) Wire bonding method
US7808116B2 (en) Semiconductor device and wire bonding method
JP2003243436A (en) Bump forming method, bump attached semiconductor element and manufacturing method thereof, semiconductor device and manufacturing method thereof, substrate and electronic device
US20060216863A1 (en) Method of manufacturing semiconductor device
WO2010050078A1 (en) Wire-bonding method, and semiconductor device
JP2003243442A (en) Semiconductor device and manufacturing method thereof, circuit substrate and electronic apparatus
JP2009010064A (en) Semiconductor device and wire bonding method
JP2003243441A (en) Semiconductor device and manufacturing method thereof, circuit substrate and electronic apparatus
WO2014077044A1 (en) Flip-chip bonding method and solid-state image pickup device manufacturing method characterized in including flip-chip bonding method
JP2007266062A (en) Process for manufacturing semiconductor device
JP2008066331A (en) Manufacturing method of semiconductor device
JP5018420B2 (en) Wire bonding method and wire bonding structure
JP4369401B2 (en) Wire bonding method
JP2010123817A (en) Wire bonding method, electronic apparatus, and method of manufacturing the same
WO2008066190A1 (en) Wire bonding method and wire bonding apparatus
JP2010073747A (en) Wire bonding method and semiconductor device
JP2007035863A (en) Semiconductor device
JP2006032875A (en) Wire bonding method, apparatus therefor, and bump forming method
JP2008085094A (en) Manufacturing method of semiconductor device
JP4616924B2 (en) Semiconductor device
JP4959174B2 (en) Semiconductor mounting method

Legal Events

Date Code Title Description
A300 Application deemed to be withdrawn because no request for examination was validly filed

Free format text: JAPANESE INTERMEDIATE CODE: A300

Effective date: 20090602