WO2008066190A1 - Wire bonding method and wire bonding apparatus - Google Patents

Wire bonding method and wire bonding apparatus Download PDF

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Publication number
WO2008066190A1
WO2008066190A1 PCT/JP2007/073265 JP2007073265W WO2008066190A1 WO 2008066190 A1 WO2008066190 A1 WO 2008066190A1 JP 2007073265 W JP2007073265 W JP 2007073265W WO 2008066190 A1 WO2008066190 A1 WO 2008066190A1
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WIPO (PCT)
Prior art keywords
bonding
wire
point
bonding point
chirality
Prior art date
Application number
PCT/JP2007/073265
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French (fr)
Japanese (ja)
Inventor
Susumu Majima
Original Assignee
Kaijo Corporation
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Publication date
Application filed by Kaijo Corporation filed Critical Kaijo Corporation
Publication of WO2008066190A1 publication Critical patent/WO2008066190A1/en

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    • H01L24/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K20/00—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating
    • B23K20/002—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating specially adapted for particular articles or work
    • B23K20/004—Wire welding
    • B23K20/005—Capillary welding
    • B23K20/007—Ball bonding
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Definitions

  • the present invention relates to a wire bonding method and a wire bonding apparatus, and more particularly, to a wire bonding method in which the bonding strength of a second bonding point and a light is improved by performing a bonding operation a plurality of times at the second bonding point. In addition, it is related to wire bonding equipment.
  • FIG. 8 is a cross-sectional view showing a conventional semiconductor device.
  • FIG. 9 is a diagram schematically showing a conventional wire bonding method.
  • the conventional semiconductor device has a frame 1 having leads 1 a, and a semiconductor chip 2 is mounted on the frame 1.
  • a pad 2 a is formed on the active surface of the semiconductor chip 2, and the pad 2 a and the lead l a are electrically connected by a wire 3.
  • the wire 3 has a triangular loop shape with a ridge 3a, and the first bonding point (1st bonding point) of the wire is located on the pad 2a, and the first bonding point of the wire 2 Bonding point (2nd bonding point) is located on lead 1a.
  • the triangular shape of the wire 3 shown in FIG. 8 is formed by the wire bonding process shown in FIG. That is, as shown in FIG. 9 (a), after forming a pole at the tip of the wire 3 fed out from the carrier 4, the carrier 4 is lowered to bond the pole to the first bonding point A, and then Raise the wire 4 to point B and feed the wire 3. Next, as shown in FIG. 9 (b), the slide 4 is moved to the point C in the direction opposite to the second bonding point G. In this way, move 4 to the opposite direction to the second bonding point G. This is generally called reverse operation. As a result, the wire 3 is inclined from the point A to the point C, and a wire 3 a is attached to the wire 3. Next, as shown in FIG.
  • Patent Document 1 Japanese Unexamined Patent Publication No. 2000-260808 (Fig. 7)
  • bonding is performed once at the second bonding point (2nd bonding point) G on the lead la.
  • 2nd bonding point 2nd bonding point
  • one bonding is performed. In joining, there may be cases where sufficient joint strength cannot be obtained, and a good shape of the j-height part (part formed by 2nd bonding) cannot be obtained.
  • the lead width at the 2nd bonding point is narrow, the lead will move easily, so if ultrasonic vibration is applied during bonding, the lead will move. However, there is a problem that the ultrasonic vibration is not sufficiently transmitted to the lead, and as a result, the bonding strength is lowered.
  • the present invention has been made in consideration of the above circumstances, and its purpose is as follows.
  • An object of the present invention is to provide a wire bonding method and a wire bonding apparatus in which the bonding strength of a wire at a 2nd bonding point is improved by performing a bonding operation a plurality of times at the 2nd bonding point.
  • a wire bonding method includes forming a ball at a tip of a wire fed from a pillar, bonding the ball to a 1 st bonding point,
  • the wire is bonded to the 2nd bonding point by moving the capillary to a 2nd bonding point and performing a plurality of bonding operations by the chirality.
  • the plurality of bonding operations may be performed without bringing the wire to break without bringing the wire into contact with the second bonding point and applying ultrasonic vibration. It is preferable to have an operation of raising and lowering, bringing the capillary into contact with the 2nd bonding point again, and applying ultrasonic vibration. As a result, ultrasonic vibration is applied several times even when ultrasonic vibration having a lower output than in the prior art is used, so that the bonding strength can be improved without causing wire cutting.
  • a wire bonding method includes: a first step of forming a ball at a tip of a carrier fed out from a carrier, and bonding the ball to a first bonding point;
  • a second step of bonding the wire to the second bonding point by moving the chirality to a second bonding point and applying ultrasonic vibration from the chirality to the second bonding point;
  • the wire bonding apparatus is a wire bonding apparatus for connecting a 1 st bonding point and a 2 n d bonding point by a wire,
  • a vibration mechanism for applying ultrasonic vibrations to the above-mentioned beam
  • a control unit that controls the bonding of the wire to the 2nd bonding point by moving the chirality to the 2nd bonding point and performing a plurality of bonding operations by the chirality;
  • the plurality of bonding operations performed when the control unit performs control to bond the wire to the 2nd bonding point After applying ultrasonic vibration by the vibration mechanism in contact with a point, the above-mentioned capillary is raised and lowered, and the capillary is again brought into contact with the 2nd bonding point and ultrasonic vibration is applied by the vibration mechanism. It is preferable that it has.
  • a wire bonding apparatus that connects the first bonding point and the second bonding point with a wire
  • a vibration mechanism for applying ultrasonic vibrations to the above-mentioned beam
  • the wire After moving the above-mentioned beam to the second bonding point and applying ultrasonic vibration from the above-mentioned beam to the second bonding point by the vibration mechanism, the wire is bonded to the second bonding point.
  • the carrier is raised and lowered, and the carrier is moved to the third bonding point at a position overlapping the stitch portion formed by bonding to the second bonding point.
  • a control unit that controls the ultrasonic vibration to be applied by the vibration mechanism by contacting the wall;
  • a wire bonding method and a wire bonding apparatus are provided in which the bonding strength with the wire at the 2nd bonding point is improved by performing the bonding operation at the 2nd bonding point multiple times. can do.
  • FIG. 1 is a configuration diagram showing a wire bonding apparatus according to Embodiment 1 of the present invention.
  • FIG. 2 is a diagram schematically showing the wire bonding method according to the first embodiment of the present invention.
  • FIG. 3 (a) is a diagram showing a state where 2nd bonding is performed
  • FIG. 3 (b) is a diagram illustrating a state where 2nd bonding is performed.
  • FIG. 4 (a) to 4 (c) show details of the 2nd bonding shown in FIG. 3 (b), and are enlarged views of the region 14.
  • FIG. 4 (a) to 4 (c) show details of the 2nd bonding shown in FIG. 3 (b), and are enlarged views of the region 14.
  • Figures 5 (A) and 5 (B) are photographs showing the 2nd bonding shape of the first embodiment.
  • FIG. 6 is a diagram schematically showing the wire bonding method according to the second embodiment of the present invention.
  • FIG. 7 is a diagram schematically showing the wire bonding method according to the third embodiment of the present invention.
  • FIG. 8 is a cross-sectional view showing a conventional semiconductor device.
  • FIG. 9 is a diagram schematically showing a conventional wire bonding method.
  • FIGS 10 (A) and (B) are photographs showing the 2nd bonding shape of the conventional method. [Explanation of symbols]
  • FIG. 1 is a configuration diagram showing a wire bonding apparatus according to Embodiment 1 of the present invention.
  • the wire bonding equipment shown in Fig. 1 has an XY stage 5, Z axis 6, and vibrator 7, an ultrasonic horn 8, a parallax 4, a motor control circuit 9, an ultrasonic control circuit 10 and a bonding control circuit 11.
  • a cab 1 On the distal end side of the ultrasonic horn 8, a cab 1 is arranged, and on the proximal end side of the ultrasonic horn 8, a vibrator 7 that generates ultrasonic vibrations is connected.
  • the carrier 4, the ultrasonic horn 8, and the vibrator 7 are attached to the Z axis 6, and the Z axis 6 is mounted on the XY stage 5.
  • the Z-axis 6 is composed of a mechanism that drives the fly 4, the ultrasonic horn 8, and the vibrator 7 to move up and down.
  • This mechanism has a motor (not shown), and can move the mechanical 4 and the ultrasonic horn 8 in the vertical direction (Z-axis direction) by the driving force of the motor.
  • the XY stage 5 is capable of moving the wheel 4 and the ultrasonic horn 8 along the Z axis 6 in the X and Y directions.
  • the XY stage 5 has a motor (not shown) so that the mechanical force 4 and the ultrasonic horn 8 can be moved by the driving force of the motor.
  • a wire 3 is threaded through the inside of the pillar 4 (see Fig. 3), and the wire 3 is fed out from the pillar 4.
  • a wire clamper 1 2 having a mechanism for grasping the wire 3 is arranged on the pillar 4. By clamping the wire 3 with the wire clamper 1 2, the length of the wire 3 fed out from the cab 4 is adjusted.
  • the ultrasonic control circuit 10 is connected to the vibrator 7 and is a circuit that controls the ultrasonic vibration generated from the vibrator 7 toward the ultrasonic horn 8.
  • the motor control circuit 9 is connected to each of the Z axis 6 and the XY stage 5, and is a circuit for controlling the motor of each of the Z axis 6 and the XY stage 5.
  • the bonding control circuit unit 1 1 is connected to the ultrasonic control circuit 10 and the motor control circuit 9 respectively, and controls the ultrasonic control circuit 10 and the motor control circuit 9 respectively to control the entire wire bonding process. It is a circuit that controls.
  • This wire bonding process is a process for realizing a wire bonding method described later. Next, a method of performing wire bonding using the wire bonding apparatus of FIG. 1 will be described with reference to FIGS.
  • FIG. 2 is a diagram schematically showing the wire bonding method according to the first embodiment of the present invention.
  • FIG. 3 (a) is a diagram showing a state where 2nd bonding is performed
  • FIG. 3 (b) is a diagram illustrating a state where 2nd bonding is performed.
  • FIGS. 4A to 4C show details of performing the 2nd bonding shown in FIG. 3B, and are enlarged views of the region 14.
  • FIG. 4A to 4C show details of performing the 2nd bonding shown in FIG. 3B, and are enlarged views of the region 14.
  • a ball 13 is formed at the tip of the wire 3 that is fed out from the carrier 4, and the carrier 4 is lowered to be on the pad 2 a of the semiconductor chip 2.
  • 1st bonding point (1st bonding point) Ball 1 3 is bonded to A.
  • pressure and ultrasonic vibration are applied to the ball 13 from the pillar 4. In this way, the wire 3 is bonded to the pad 2a.
  • the slide 4 is moved in the direction opposite to the second bonding point C (repurse operation). This attaches ⁇ 3 b to wire 3 (see Fig. 3 (a)).
  • the cable 4 is lowered and the wire 3 is bonded to the second bonding point C. At this time, ultrasonic vibration and pressure are applied to the wire 3.
  • wire 3 is bonded to the second bonding point C.
  • pressure 4 is applied to the second bonding point C as shown by arrow 1 8 and ultrasonic vibration is applied as shown by arrow 15. Perform this operation for a specified time.
  • the lift 4 is raised as shown by an arrow 17.
  • the joint in the region 16 of the second bonding point C is strengthened by the ultrasonic vibration.
  • the ultrasonic vibration is generally increased. However, if the ultrasonic vibration is set too high, the wire is cut during bonding, and the bonding operation is interrupted. If the ultrasonic vibration is lowered so as not to cause the wire to be cut, turning may occur or sufficient bonding strength may not be obtained.
  • the bonding area can be increased, and as a result, the bonding strength can be improved. For this reason, it is possible to suppress the turning of the stitch portion that occurs when the bonding strength is weak. Therefore, it is effective for devices that are prone to wire cutting and turning.
  • wire bonding is performed on the pads (first bonding points) and leads (second bonding points) along the four sides of the planar rectangular semiconductor chip using the wire bonding method according to the first embodiment.
  • a tensile test was conducted to measure the load at which the wire (gold wire) was broken by breaking.
  • wire bonding is performed on the pad (first bonding point) and the lead (second bonding point) using the wire bonding method according to the prior art.
  • a tensile test was also performed on (gold wire). Table 1 shows the results of these tests.
  • the conventional method is a conventional wire bonding method in which 2nd bonding is performed with only one bonding operation.
  • the ultrasonic vibration during the bonding operation of 2nd bonding was performed under the usual conditions.
  • DSB double stitch bonding
  • 2nd bonding is performed by two bonding operations.
  • the ultrasonic vibration during the first bonding operation of 2nd bonding was set lower than the normal condition
  • the ultrasonic vibration during the second bonding operation was set higher than the normal condition. Bonding conditions other than the ultrasonic vibration values shown here were the same for both the conventional method and DSB.
  • the right side is a wire with 1st bonding as the pad along the right side of the semiconductor chip.
  • the upper side is a wire with the pad along the upper side of the semiconductor chip as 1st bonding.
  • the left side is the left side of the semiconductor chip The pad along the 1st bonding is a wire.
  • the lower side is a wire with the pad along the lower side of the semiconductor chip as the 1st bonding.
  • the wire bonding method (DSB) according to the first embodiment has higher bonding strength than the conventional method.
  • Fig. 5 (A) is a photograph showing the 2nd bonding shape of the lower side of the DSB shown in Table 1
  • Fig. 5 (B) is a photograph showing the 2nd bonding shape of the right side of the DSB shown in Table 1.
  • FIGS. 5 (A) and 5 (B) in the wire bonding method according to Embodiment 1, no turn-up phenomenon was observed.
  • Fig. 10 (A) is a photograph showing the 2nd bonding shape of the conventional method shown in Table 1
  • Fig. 10 (B) is a photograph showing the 2nd bonding shape of the conventional method shown in Table 1.
  • the turning phenomenon 19 is observed, and the appearance of the stitch part is observed. It was also confirmed that the bonding state was poor.
  • FIG. 6 is a diagram schematically showing the wire bonding method according to the second embodiment of the present invention, and the same parts as those in FIG.
  • 2nd bonding is performed by three bonding operations.
  • the process of performing 1st bonding at the first bonding point A, and the process of bonding at the second bonding point C and the third bonding point E This is the same as shown in Fig. 2.
  • the lift 4 is raised to the F point of the arbitrarily set height, and the arbitrarily set amount (several microns) ) Only when moving the 4 in the rubbing direction (opposite to the first bonding point A), lowering the pressure while applying pressure to the fourth bonding point G and lower than that of the conventional single bonding operation. Ultrasonic vibration is applied and this operation is performed for a predetermined time. In this way, the bonding strength at the 2nd bonding point is improved by performing the bonding operation three times at the C point, the E point and the G point.
  • the distance between the third bonding point E and the fourth bonding point G is narrow, and it is preferable that the distance be such that the third bonding point and the fourth bonding point overlap the stitch portion of the 2nd bonding.
  • the output of the ultrasonic vibration at each bonding operation can be made lower than that in the first embodiment. In this case, the occurrence of wire cutting can be further suppressed.
  • FIG. 7 schematically shows a wire bonding method according to Embodiment 3 of the present invention.
  • the same parts as those in FIG. 6 are denoted by the same reference numerals, and only different parts will be described.
  • This embodiment differs from the second embodiment in the positions of the third bonding point and the fourth bonding point.
  • the lift is raised to the point D of the arbitrarily set height, and the direction arbitrarily set by the arbitrarily set amount (several microns) (other than the rubbing direction)
  • the direction includes the entire range of 360 degrees, but the rubbing direction is shown as an example in Fig. 7), and is moved downward while applying the vibration and pressure to the third bonding point E.
  • the present invention is not limited to the above-described embodiment, and various modifications can be made without departing from the spirit of the present invention.
  • the force S in which 2nd bonding is performed by three bonding operations, and the 2nd bonding can be performed in four or more bonding operations.
  • Embodiments 1 to 3 described above when performing a plurality of bonding operations in 2nd bonding, lower ultrasonic vibration is applied than in the case of a single bonding operation of the prior art. Compared to the single bonding operation of the technology, a lower bonding load can be applied, and the output of ultrasonic vibration can be the same as that of the conventional technology, and both ultrasonic vibration and bonding load can be reduced.

Abstract

Provided are a wire bonding method and a wire bonding apparatus by which bonding strength of a second bonding point with a wire is improved by performing bonding operation a plurality of times to the second bonding point. The wire bonding method is provided with a first step of forming a ball at the tip of a wire fed from a capillary and bonding the ball on the first bonding point (A); a second step of shifting the capillary to a second bonding point (C), applying ultrasonic oscillation to the second bonding point (C) from the capillary and bonding the wire to the second bonding point (C); and a third step of bringing up and down the capillary to have the capillary in contact with a third bonding point (E) at a position overlapping a switch section formed in the second step.

Description

ワイヤボンディング方法及びワイヤポンディング装置 1 . 技術分野  Wire bonding method and wire bonding apparatus 1. Technical Field
本発明は、ワイヤボンディング方法及びワイヤボンディング装置に係わり、 特に、 2 n dボンディング点に複数回のボンディング動作を行うことにより 2 n dボンディング点のワイヤと明の接合強度を向上させたワイヤボンディン グ方法及びワイヤボンディング装置に糸 1田関する。  The present invention relates to a wire bonding method and a wire bonding apparatus, and more particularly, to a wire bonding method in which the bonding strength of a second bonding point and a light is improved by performing a bonding operation a plurality of times at the second bonding point. In addition, it is related to wire bonding equipment.
2 . 背景技術 2. Background art
図 8は、 従来の半導体装置を示す断面図である。 図 9は、 従来のワイヤボ ンディング方法を模式的に示す図である。  FIG. 8 is a cross-sectional view showing a conventional semiconductor device. FIG. 9 is a diagram schematically showing a conventional wire bonding method.
図 8に示すように、 従来の半導体装置はリード 1 aを備えたフレーム 1を 有しており、 このフレーム 1には半導体チップ 2がマウントされている。 半 導体チップ 2の能動面にはパッド 2 aが形成されており、 このパッド 2 aと リード l aとはワイヤ 3によって電気的に接続されている。 このワイヤ 3は 図 8に示すように癖 3 aを備えた三角形のループ形状を有しており、 ワイヤ の第 1ボンディング点（ 1 s tボンディング点）はパッド 2 a上に位置され、 ワイヤの第 2ボンディング点 （ 2 n dボンディング点） はリード 1 a上に位 置されている。  As shown in FIG. 8, the conventional semiconductor device has a frame 1 having leads 1 a, and a semiconductor chip 2 is mounted on the frame 1. A pad 2 a is formed on the active surface of the semiconductor chip 2, and the pad 2 a and the lead l a are electrically connected by a wire 3. As shown in FIG. 8, the wire 3 has a triangular loop shape with a ridge 3a, and the first bonding point (1st bonding point) of the wire is located on the pad 2a, and the first bonding point of the wire 2 Bonding point (2nd bonding point) is located on lead 1a.
図 8に示すワイヤ 3の三角形状は、 図 9に示すワイヤボンディング工程に より形成される。 すなわち、 図 9 ( a ) に示すように、 キヤビラリ 4から繰 り出されたワイヤ 3の先端にポールを形成した後に、 キヤビラリ 4を下降し て第 1ボンディング点 Aに前記ポールをボンディングし、 その後、 キヤビラ リ 4を B点まで上昇させてワイヤ 3を繰り出す。 次に、 図 9 ( b ) に示すよ うに、 キヤビラリ 4を第 2ボンディング点 Gと反対方向に C点まで移動させ る。 このようにキヤビラリ 4を第 2ボンディング点 Gと反対方向に移動させ ることを一般にリバース動作という。 これにより、 ワイヤ 3は A点から C点 まで傾斜した形状となり、 ワイヤ 3に癖 3 aが付けられる。 次に、 図 9 (c) に示すように、 キヤビラリ 4を F点まで上昇させ、 図 8に示す傾斜部分 （癖 3 aから第 2ボンディング点 Gまでの部分）だけワイヤ 3を繰り出す。次に、 図 9 (d)、 (e) に示すように、 キヤビラリ 4を下降させて第 2ボンディン グ点 Gにワイヤ 3をボンディングする （例えば特許文献 1参照）。 The triangular shape of the wire 3 shown in FIG. 8 is formed by the wire bonding process shown in FIG. That is, as shown in FIG. 9 (a), after forming a pole at the tip of the wire 3 fed out from the carrier 4, the carrier 4 is lowered to bond the pole to the first bonding point A, and then Raise the wire 4 to point B and feed the wire 3. Next, as shown in FIG. 9 (b), the slide 4 is moved to the point C in the direction opposite to the second bonding point G. In this way, move 4 to the opposite direction to the second bonding point G. This is generally called reverse operation. As a result, the wire 3 is inclined from the point A to the point C, and a wire 3 a is attached to the wire 3. Next, as shown in FIG. 9 (c), the lift 4 is raised to the point F, and the wire 3 is fed out only by the inclined part (the part from the flange 3a to the second bonding point G) shown in FIG. Next, as shown in FIGS. 9D and 9E, the cavity 4 is lowered and the wire 3 is bonded to the second bonding point G (see, for example, Patent Document 1).
[特許文献 1] 特開 2000— 260 808号公報 （図 7 )  [Patent Document 1] Japanese Unexamined Patent Publication No. 2000-260808 (Fig. 7)
3. 発明の開示 3. Disclosure of the invention
上述したように従来のワイヤボンディング方法では、 リード l a上の第 2ボンディング点 （2 n dボンディング点） Gに 1回のボンディング接合を 行っているが、 リードの材料や表面状態によっては 1回のボンディング接合 では十分な接合強度ゃステ、j チ部 （2 n dボンディングによって形成された 部分） の良好な形状が得られない場合がある。  As described above, in the conventional wire bonding method, bonding is performed once at the second bonding point (2nd bonding point) G on the lead la. However, depending on the lead material and surface condition, one bonding is performed. In joining, there may be cases where sufficient joint strength cannot be obtained, and a good shape of the j-height part (part formed by 2nd bonding) cannot be obtained.
1回のボンディング接合で接合強度を向上させるには、 ボンディング時に 印加される超音波振動の出力を高くしたり、 ボンディング時に加えられる荷 重を重くすることが考えられる。 しかし、 超音波出力を高く したり、 荷重を 重くするとボンディング時にワイヤが切断されるワイヤ力ッ トの不具合が生 じやすくなる。  In order to improve the bonding strength by one bonding, it is conceivable to increase the output of ultrasonic vibration applied during bonding or increase the load applied during bonding. However, if the ultrasonic output is increased or the load is increased, a problem with the wire force that breaks the wire during bonding tends to occur.
一方、 ワイヤカットを抑制するには、 超音波出力を低くしたり、 ボンディ ング時の荷重を下げることが考えられる。しかし、超音波出力を低く したり、 ボンディング時の荷重を軽くすると、図 1 0 (A)、 (B)に示すようにステツ チ部にめくれ現象 1 9が発生しやすくなる。 めくれ現象 1 9は、 ボンディン グの接合状態が悪いときに発生するものである。  On the other hand, to suppress wire cuts, it is conceivable to lower the ultrasonic output or lower the load during bonding. However, if the ultrasonic output is lowered or the bonding load is lightened, the turning phenomenon 19 tends to occur in the stitch portion as shown in FIGS. 10 (A) and (B). The turnover phenomenon 1 9 occurs when the bonding state of the bonding is poor.
このようなことから、 超音波振動の出力条件及びボンディング時の荷重の 条件を設定するのに手間がかかり長時間を要することがある。  For this reason, setting the output condition of the ultrasonic vibration and the condition of the load at the time of bonding takes time and may take a long time.
また、 2 n dボンディング点のリードの幅が細いものでは、 リードが動き やすいため、 ボンディング時に超音波振動を印加するとリードが動いて.しま い、 その超音波振動がリードに十分に伝達されず、 その結果、 接合強度が低 下する問題がある。 In addition, if the lead width at the 2nd bonding point is narrow, the lead will move easily, so if ultrasonic vibration is applied during bonding, the lead will move. However, there is a problem that the ultrasonic vibration is not sufficiently transmitted to the lead, and as a result, the bonding strength is lowered.
本発明は上記のような事情を考慮してなされたものであり、 その目的は、 The present invention has been made in consideration of the above circumstances, and its purpose is as follows.
2 n dボンディング点に複数回のボンディング動作を行うことにより 2 n d ボンディング点のワイヤとの接合強度を向上させたワイヤボンディング方法 及びワイヤボンディング装置を提供することにある。 An object of the present invention is to provide a wire bonding method and a wire bonding apparatus in which the bonding strength of a wire at a 2nd bonding point is improved by performing a bonding operation a plurality of times at the 2nd bonding point.
上記課題を解決するため、 本発明に係るワイヤボンディング方法は、 キヤ ビラリから繰り出されたワイヤの先端にボールを形成し、 前記ボールを 1 s tボンディング点にボンデイングし、  In order to solve the above-described problem, a wire bonding method according to the present invention includes forming a ball at a tip of a wire fed from a pillar, bonding the ball to a 1 st bonding point,
前記キヤビラリを 2 n dボンディング点に移動させ、 前記キヤビラリに よって複数回のボンディング動作を行うことにより前記 2 n dボンディング 点に前記ワイヤをボンディングすることを特徴とする。  The wire is bonded to the 2nd bonding point by moving the capillary to a 2nd bonding point and performing a plurality of bonding operations by the chirality.
また、 本発明に係るワイヤボンディング方法において、 前記複数回のボン ディング動作は、 前記キヤビラリを前記 2 n dボンディング点に接触させて 超音波振動を加えた後に、 ワイヤを破断させることなく、 前記キヤビラリを 上昇及び下降させ、 前記 2 n dボンディング点に前記キヤピラリを再び接触 させて超音波振動を加える動作を有するものであることが好ましい。 これに より、 従来技術に比べて低い出力の超音波振動を用いても複数回超音波振動 を加えるため、 ワイヤ切断を起こすことなく接合強度を向上させることがで きる。  In the wire bonding method according to the present invention, the plurality of bonding operations may be performed without bringing the wire to break without bringing the wire into contact with the second bonding point and applying ultrasonic vibration. It is preferable to have an operation of raising and lowering, bringing the capillary into contact with the 2nd bonding point again, and applying ultrasonic vibration. As a result, ultrasonic vibration is applied several times even when ultrasonic vibration having a lower output than in the prior art is used, so that the bonding strength can be improved without causing wire cutting.
本発明に係るワイヤボンディング方法は、 キヤビラリから繰り出されたヮ ィャの先端にボールを形成し、 前記ボールを第 1ボンディング点にボンディ ングする第 1工程と、  A wire bonding method according to the present invention includes: a first step of forming a ball at a tip of a carrier fed out from a carrier, and bonding the ball to a first bonding point;
前記キヤビラリを第 2ボンディング点に移動させ、 前記キヤビラリから前 記第 2ボンディング点に超音波振動を加えることにより前記第 2ポンディン グ点に前記ワイヤをボンディングする第 2工程と、  A second step of bonding the wire to the second bonding point by moving the chirality to a second bonding point and applying ultrasonic vibration from the chirality to the second bonding point;
前記キヤビラリを上昇及ぴ下降させ、 前記第 2工程によって形成されたス テツチ部に重なる位置の第 3ボンディング点に前記キヤビラリを接触させて 超音波振動を加える第 3工程と、 Raising and lowering the above-mentioned beam, bringing the above-mentioned beam into contact with the third bonding point at the position overlapping the stitch portion formed by the above-mentioned second step. A third step of applying ultrasonic vibration,
を具備することを特徴とする。 It is characterized by comprising.
本発明に係るワイヤボンディング装置は、 1 s tボンディング点と 2 n d ボンディング点をワイヤによって接続するワイヤボンディング装置において、 前記ワイヤを繰り出すキヤビラリと、  The wire bonding apparatus according to the present invention is a wire bonding apparatus for connecting a 1 st bonding point and a 2 n d bonding point by a wire,
前記キヤビラリを移動させる移動機構と、  A moving mechanism for moving the above-mentioned beam;
前記キヤビラリに超音波振動を加える振動機構と、  A vibration mechanism for applying ultrasonic vibrations to the above-mentioned beam;
前記キヤビラリを前記 2 n dボンディング点に移動させ、 前記キヤビラリ によって複数回のボンディング動作を行うことにより前記 2 n dボンディン グ点に前記ワイヤをボンディングするように制御する制御部と、  A control unit that controls the bonding of the wire to the 2nd bonding point by moving the chirality to the 2nd bonding point and performing a plurality of bonding operations by the chirality;
を具備することを特徴とする。 It is characterized by comprising.
また、 本発明に係るワイヤボンディング装置は、 前記制御部において前記 2 n dボンディング点に前記ワイヤをボンディングするように制御する際に 行われる前記複数回のボンディング動作は、 前記キヤビラリを前記 2 n dポ ンデイング点に接触させて前記振動機構により超音波振動を加えた後に、 前 記キヤピラリを上昇及び下降させ、 前記 2 n dボンディング点に前記キヤピ ラリを再び接触させて前記振動機構により超音波振動を加える動作を有する ものであることが好ましい。  In the wire bonding apparatus according to the present invention, the plurality of bonding operations performed when the control unit performs control to bond the wire to the 2nd bonding point. After applying ultrasonic vibration by the vibration mechanism in contact with a point, the above-mentioned capillary is raised and lowered, and the capillary is again brought into contact with the 2nd bonding point and ultrasonic vibration is applied by the vibration mechanism. It is preferable that it has.
本発明に係るワイヤボンディング装置は、 第 1ボンディング点と第 2ボン ディング点をワイヤによって接続するワイヤボンディング装置において、 前記ワイヤを繰り出すキヤビラリと、  In the wire bonding apparatus according to the present invention, a wire bonding apparatus that connects the first bonding point and the second bonding point with a wire,
前記キヤビラリを移動させる移動機構と、  A moving mechanism for moving the above-mentioned beam;
前記キヤビラリに超音波振動を加える振動機構と、  A vibration mechanism for applying ultrasonic vibrations to the above-mentioned beam;
前記キヤビラリを第 2ボンディング点に移動させ、 前記キヤビラリから前 記第 2ボンディング点に前記振動機構によつて超音波振動を加えることによ り前記第 2ボンディング点に前記ワイヤをボンディングした後に、 前記キヤ ビラリを上昇及び下降させ、 前記第 2ボンディング点へのボンディングに よつて形成されたステツチ部に重なる位置の第 3ボンディング点に前記キャ ビラリを接触させて前記振動機構によって超音波振動を加えるように制御す る制御部と、 After moving the above-mentioned beam to the second bonding point and applying ultrasonic vibration from the above-mentioned beam to the second bonding point by the vibration mechanism, the wire is bonded to the second bonding point. The carrier is raised and lowered, and the carrier is moved to the third bonding point at a position overlapping the stitch portion formed by bonding to the second bonding point. A control unit that controls the ultrasonic vibration to be applied by the vibration mechanism by contacting the wall;
を具備することを特徴とする。 It is characterized by comprising.
以上説明したように本発明によれば、 2 n dボンディング点に複数回のポ ンディング動作を行うことにより 2 n dボンディング点のワイヤとの接合強 度を向上させたワイヤボンディング方法及びワイヤボンディング装置を提供 することができる。  As described above, according to the present invention, a wire bonding method and a wire bonding apparatus are provided in which the bonding strength with the wire at the 2nd bonding point is improved by performing the bonding operation at the 2nd bonding point multiple times. can do.
4. 図面の簡単な説明 4. Brief description of the drawings
図 1は、 本発明の実施の形態 1によるワイヤボンディング装置を示す構成 図である。  FIG. 1 is a configuration diagram showing a wire bonding apparatus according to Embodiment 1 of the present invention.
図 2は、 本発明の実施の形態 1によるワイヤボンディング方法を模式的に 示す図である。  FIG. 2 is a diagram schematically showing the wire bonding method according to the first embodiment of the present invention.
図 3 (a) は、 2 n dボンディングを行う様子を示す図であり、 図 3 (b) は、 2 n dボンディングを行っている様子を示す図である。  FIG. 3 (a) is a diagram showing a state where 2nd bonding is performed, and FIG. 3 (b) is a diagram illustrating a state where 2nd bonding is performed.
図 4 (a) 〜 （c) は、 図 3 (b) に示す 2 n dボンディングを行う詳細 を示すものであって領域 14を拡大した図である。  4 (a) to 4 (c) show details of the 2nd bonding shown in FIG. 3 (b), and are enlarged views of the region 14. FIG.
図 5 (A)， (B) は、 実施の形態 1の 2 n dボンディング形状を示す写真 である。  Figures 5 (A) and 5 (B) are photographs showing the 2nd bonding shape of the first embodiment.
図 6は、 本発明の実施の形態 2によるワイヤボンディング方法を模式的に 示す図である。  FIG. 6 is a diagram schematically showing the wire bonding method according to the second embodiment of the present invention.
図 7は、 本発明の実施の形態 3によるワイヤボンディング方法を模式的に 示す図である。  FIG. 7 is a diagram schematically showing the wire bonding method according to the third embodiment of the present invention.
図 8は、 従来の半導体装置を示す断面図である。  FIG. 8 is a cross-sectional view showing a conventional semiconductor device.
図 9は、 従来のワイヤボンディング方法を模式的に示す図である。  FIG. 9 is a diagram schematically showing a conventional wire bonding method.
図 1 0 (A)， (B) は、 従来法の 2 n dボンディング形状を示す写真であ る。 [符号の説明] Figures 10 (A) and (B) are photographs showing the 2nd bonding shape of the conventional method. [Explanation of symbols]
1 …フレ一ム  1… Frame
1 a…リード 1 a … Lead
2 …半導体チップ  2… Semiconductor chip
2 a…パッ ド  2 a… pad
3 …ワイヤ  3… Wire
3 a…癖  3 a… 癖
3 b…癖  3 b… 癖
4 …キヤビラリ  4…
5 —X Yステージ  5 —X Y stage
6 '■'Z軸  6 '■' Z-axis
7 …振動子  7… vibrator
8 …超音波ホーン  8 ... Ultrasonic horn
9 …モータ制御回路  9… Motor control circuit
1 0 …超音波制御回路  1 0 ... Ultrasonic control circuit
1 1 …ボンディング制御回路  1 1… Bonding control circuit
1 2 …ワイヤクランパ  1 2… Wire clamper
1 3 …ボール  1 3… Ball
1 4 ， 1 6…領域  1 4, 1 6 ... area
1 5 , 17, 18…矢印  1 5, 17, 18… arrow
1 9 …めくれ現象  1 9… Turning phenomenon
5. 発明を実施するための最良の形態 5. BEST MODE FOR CARRYING OUT THE INVENTION
以下、 図面を参照して本発明の実施の形態について説明する。  Embodiments of the present invention will be described below with reference to the drawings.
(実施の形態 1)  (Embodiment 1)
図 1は、 本発明の実施の形態 1によるワイヤボンディング装置を示す構成 図である。  FIG. 1 is a configuration diagram showing a wire bonding apparatus according to Embodiment 1 of the present invention.
図 1に示すワイヤボンディング装置は、 XYステージ 5、 Z軸 6、 振動子 7、超音波ホーン 8、キヤビラリ 4、モータ制御回路 9、超音波制御回路 1 0及 ぴボンディング制御回路 1 1を有している。 The wire bonding equipment shown in Fig. 1 has an XY stage 5, Z axis 6, and vibrator 7, an ultrasonic horn 8, a parallax 4, a motor control circuit 9, an ultrasonic control circuit 10 and a bonding control circuit 11.
超音波ホーン 8の先端側にはキヤビラリ 1が配置されており、 超音波ホー ン 8の基端側には超音波振動を発生させる振動子 7が接続されている。 キヤ ビラリ 4、 超音波ホーン 8及び振動子 7は Z軸 6に取り付けられており、 こ の Z軸 6は X Yステージ 5上に搭載されている。  On the distal end side of the ultrasonic horn 8, a cab 1 is arranged, and on the proximal end side of the ultrasonic horn 8, a vibrator 7 that generates ultrasonic vibrations is connected. The carrier 4, the ultrasonic horn 8, and the vibrator 7 are attached to the Z axis 6, and the Z axis 6 is mounted on the XY stage 5.
Z軸 6はキヤビラリ 4、 超音波ホーン 8及び振動子 7を上下移動させるた めに駆動する機構から構成されている。 この機構はモータ （図示せず） を有 しており、 モータの駆動力によってキヤビラリ 4及ぴ超音波ホーン 8を上下 方向 （Z軸方向） に移動させることができるようになつている。  The Z-axis 6 is composed of a mechanism that drives the fly 4, the ultrasonic horn 8, and the vibrator 7 to move up and down. This mechanism has a motor (not shown), and can move the mechanical 4 and the ultrasonic horn 8 in the vertical direction (Z-axis direction) by the driving force of the motor.
X Yステージ 5は Z軸 6とともにキヤビラリ 4及び超音波ホーン 8を X Y 方向に移動可能となっている。 X Yステージ 5はモータ （図示せず） を有し ており、 モータの駆動力によってキヤビラリ 4及ぴ超音波ホーン 8を移動さ せることができるようになっている。  The XY stage 5 is capable of moving the wheel 4 and the ultrasonic horn 8 along the Z axis 6 in the X and Y directions. The XY stage 5 has a motor (not shown) so that the mechanical force 4 and the ultrasonic horn 8 can be moved by the driving force of the motor.
キヤビラリ 4の内部にはワイヤ 3が揷通されており （図 3参照）、 ワイヤ 3がキヤビラリ 4から繰り出されるようになつている。 キヤビラリ 4の上に はワイヤ 3をつかむ機構を持つワイヤクランパ 1 2が配置されている。 この ワイヤクランパ 1 2によってワイヤ 3をクランプすることによりキヤビラリ 4から繰り出されるワイヤ 3の長さが調整される。  A wire 3 is threaded through the inside of the pillar 4 (see Fig. 3), and the wire 3 is fed out from the pillar 4. A wire clamper 1 2 having a mechanism for grasping the wire 3 is arranged on the pillar 4. By clamping the wire 3 with the wire clamper 1 2, the length of the wire 3 fed out from the cab 4 is adjusted.
超音波制御回路 1 0は、 振動子 7に接続されており、 超音波ホーン 8に向 けて振動子 7から発生させる超音波振動を制御する回路である。 モータ制御 回路 9は、 Z軸 6及び X Yステージ 5それぞれに接続されており、 Z軸 6及 び X Yステージ 5それぞれのモータを制御する回路である。  The ultrasonic control circuit 10 is connected to the vibrator 7 and is a circuit that controls the ultrasonic vibration generated from the vibrator 7 toward the ultrasonic horn 8. The motor control circuit 9 is connected to each of the Z axis 6 and the XY stage 5, and is a circuit for controlling the motor of each of the Z axis 6 and the XY stage 5.
ボンディング制御回路部 1 1は、 超音波制御回路 1 0及びモータ制御回路 9それぞれに接続されており、 超音波制御回路 1 0及びモータ制御回路 9そ れぞれを制御することによりワイヤボンディング工程全体を制御する回路で ある。 このワイヤボンディング工程は、 後述するワイヤボンディング方法を 実現する工程である。 次に、 図 1のワイヤボンディング装置を用いてワイヤボンディングを行う 方法について図 2〜図 4を参照しつつ説明する。 The bonding control circuit unit 1 1 is connected to the ultrasonic control circuit 10 and the motor control circuit 9 respectively, and controls the ultrasonic control circuit 10 and the motor control circuit 9 respectively to control the entire wire bonding process. It is a circuit that controls. This wire bonding process is a process for realizing a wire bonding method described later. Next, a method of performing wire bonding using the wire bonding apparatus of FIG. 1 will be described with reference to FIGS.
図 2は、 本発明の実施の形態 1によるワイヤボンディング方法を模式的に 示す図である。 図 3 ( a ) は、 2 n dボンディングを行う様子を示す図であ り、 図 3 ( b ) は、 2 n dボンディングを行っている様子を示す図である。 図 4 ( a ) 〜 （c ) は、 図 3 ( b ) に示す 2 n dボンディングを行う詳細を 示すものであって領域 1 4を拡大した図である。  FIG. 2 is a diagram schematically showing the wire bonding method according to the first embodiment of the present invention. FIG. 3 (a) is a diagram showing a state where 2nd bonding is performed, and FIG. 3 (b) is a diagram illustrating a state where 2nd bonding is performed. FIGS. 4A to 4C show details of performing the 2nd bonding shown in FIG. 3B, and are enlarged views of the region 14. FIG.
まず、 図 3 ( a ) 及び図 2に示すように、 キヤビラリ 4から繰り,出された ワイヤ 3の先端にボール 1 3を形成し、 キヤビラリ 4を下降させて半導体 チップ 2のパッド 2 a上の第 1ボンディング点 （1 s tボンディング点） A にボール 1 3をボンディングする。 この際、 キヤビラリ 4からボール 1 3に 圧力及び超音波振動が加えられる。 このようにしてパッド 2 a上にワイヤ 3がボンディング接合される。  First, as shown in FIG. 3 (a) and FIG. 2, a ball 13 is formed at the tip of the wire 3 that is fed out from the carrier 4, and the carrier 4 is lowered to be on the pad 2 a of the semiconductor chip 2. 1st bonding point (1st bonding point) Ball 1 3 is bonded to A. At this time, pressure and ultrasonic vibration are applied to the ball 13 from the pillar 4. In this way, the wire 3 is bonded to the pad 2a.
次いで、 図 2に示すように、 キヤビラリ 4を上昇させてワイヤ 3を繰り出 した後に、キヤビラリ 4を第 2ボンディング点 Cと反対方向に移動させる（リ パース動作）。 これにより、 ワイヤ 3には癖 3 bが付けられる （図 3 ( a ) 参 照）。 次に、 キヤビラリ 4を斜め上方向に B点まで上昇させ、 図 3 ( b ) に示 す癖 3 bから第 2ボンディング点までのワイヤ 3を繰り出す。 次に、 図 2に 示すように、 キヤビラリ 4を下降させて第 2ボンディング点 Cにワイヤ 3を ボンディングする。この際、ワイヤ 3には超音波振動及び圧力が加えられる。 次に、 キヤビラリ 4を任意に設定した高さの D点まで上昇させ、 任意に設定 した量 （数ミクロン） だけルービング方向 （第 1ボンディング点 Aと反対方 向） にキヤビラリ 4を移動させながら下降させ、 第 3ボンディング点 Eに超 音波振動及ぴ圧力を加える。 このように C点及ぴ E点に 2回のボンディング 動作を行うことにより、 2 n dボンディング点の接合強度を向上させる。 上述した第 2ボンディング点 C及ぴ第 3ボンディング点 Eにワイヤ 3をボ ンディングする方法について図 4を参照しつつ詳細に説明する。  Next, as shown in FIG. 2, after moving the lift 4 and feeding the wire 3, the slide 4 is moved in the direction opposite to the second bonding point C (repurse operation). This attaches 癖 3 b to wire 3 (see Fig. 3 (a)). Next, lift 4 and raise the wire 4 diagonally upward to point B, and feed out wire 3 from 癖 3 b to the second bonding point shown in Fig. 3 (b). Next, as shown in FIG. 2, the cable 4 is lowered and the wire 3 is bonded to the second bonding point C. At this time, ultrasonic vibration and pressure are applied to the wire 3. Next, raise the 4 to the point D of the arbitrarily set height, and move down the 4 while moving the 4 in the rubbing direction (the direction opposite to the first bonding point A) by the arbitrarily set amount (several microns). Apply ultrasonic vibration and pressure to the third bonding point E. In this way, the bonding strength at the 2nd bonding point is improved by performing the bonding operation twice at the C point and the E point. The method for bonding the wire 3 to the second bonding point C and the third bonding point E will be described in detail with reference to FIG.
図 4 ( a ) に示すように、 ワイヤ 3を第 2ボンディング点 Cにボンディン グする際、 キヤビラリ 4によって矢印 1 8のように第 2ボンディング点 Cに 圧力を加えるとともに矢印 1 5のように超音波振動を加える。 この動作を所 定時間行う。 As shown in Fig. 4 (a), wire 3 is bonded to the second bonding point C. When pressing, pressure 4 is applied to the second bonding point C as shown by arrow 1 8 and ultrasonic vibration is applied as shown by arrow 15. Perform this operation for a specified time.
次に、 図 4 ( b ) に示すように、 キヤビラリ 4を矢印 1 7のように上昇さ せる。 このとき、 第 2ボンディング点 Cの領域 1 6の接合部は前記超音波振 動によって強化されている。 次いで、 矢印 1 7のように数ミクロン程度ルー ビング方向にキヤビラリ 4を移動させながら下降させる。  Next, as shown in FIG. 4 (b), the lift 4 is raised as shown by an arrow 17. At this time, the joint in the region 16 of the second bonding point C is strengthened by the ultrasonic vibration. Next, as shown by the arrow 17, move the cab 4 down in the rubbing direction for a few microns.
次に、 図 4 ( c ) に示すように、 キヤビラリ 4によって矢印 1 8のように 第 3ボンディング点 Eに圧力を加えるとともに矢印 1 5のように超音波振動 を加える。 この動作を所定時間行う。 このように C点及び E点に 2回のボン ディング動作を行うことにより、 2 n dボンディング点の接合強度を向上さ せる。 尚、 第 2ボンディング点 Cと第 3ボンディング点 Eとの間隔は狭く、 第 2ボンディング点へのボンディング動作によって形成されたステッチ部に 第 3ボンディング点 Eが重なる程度の狭い間隔が好ましい。  Next, as shown in FIG. 4 (c), pressure is applied to the third bonding point E as indicated by an arrow 18 by the spring 4 and ultrasonic vibration is applied as indicated by an arrow 15. This operation is performed for a predetermined time. In this way, the bonding strength at the 2nd bonding point is improved by performing the bonding operation twice at the C point and the E point. It should be noted that the distance between the second bonding point C and the third bonding point E is narrow, and a narrow distance such that the third bonding point E overlaps with the stitch portion formed by the bonding operation to the second bonding point is preferable.
接合強度を上げるには超音波振動を高くするのが一般的である。 しかし、 超音波振動を高く しすぎるとボンディング中にワイヤが切断されてしまい、 ボンディング動作が中断される。 また、 ワイヤの切断を発生させないように 超音波振動を低くすると、 めくれが発生したり、 十分な接合強度が得られな くなることがある。  In order to increase the bonding strength, the ultrasonic vibration is generally increased. However, if the ultrasonic vibration is set too high, the wire is cut during bonding, and the bonding operation is interrupted. If the ultrasonic vibration is lowered so as not to cause the wire to be cut, turning may occur or sufficient bonding strength may not be obtained.
これに対し、 図 4 ( a ) 〜 （c ) に示すように C点及び E点に 2回のボン ディング動作を行う場合は次のように制御する。 1回目のボンディング動作 で接合強度を十分に確保する必要がないので、 従来技術の 1回だけのボンデ ィング動作の場合に比べて低い超音波振動を印加することが可能となる。 そ して、 2回目のボンディング動作時に、 キヤビラリ 4を斜めに下降させ、 第 3ボンディング点 Eにタツチさせることによりワイヤを切断させやすくする とともに、 従来技術の 1回だけのボンディング動作の場合に比べて低い超音 波振動をキヤビラリ 4から印加する。 このように従来技術の 1回だけのボン ディング動作の場合に比べて低い超音波振動を 2回のボンディング動作に よって加えることによりワイヤ切断を抑制することができる。これとともに、On the other hand, as shown in Fig. 4 (a) to (c), when bonding is performed twice at point C and point E, control is performed as follows. Since it is not necessary to secure sufficient bonding strength in the first bonding operation, it is possible to apply lower ultrasonic vibration than in the case of the single bonding operation of the prior art. And, at the time of the second bonding operation, the wire 4 is lowered obliquely and touched to the third bonding point E to make it easier to cut the wire, as compared to the case of the conventional single bonding operation. Apply low supersonic vibrations from the Cavity 4. In this way, compared to the conventional single bonding operation, the ultrasonic vibration is low and the bonding operation is performed twice. Therefore, wire cutting can be suppressed by adding. With this,
C点及び E点に 2回のボンディング動作を行うことにより、 接合面積を増や すことができ、 その結果、 接合強度を向上させることが可能となる。 このた め、 接合強度が弱い時に発生するステッチ部のめくれを抑制することができ る。 従って、 ワイヤ切断やめくれが発生しやすいデバイスに対して有効であ る。 By performing bonding operations twice at points C and E, the bonding area can be increased, and as a result, the bonding strength can be improved. For this reason, it is possible to suppress the turning of the stitch portion that occurs when the bonding strength is weak. Therefore, it is effective for devices that are prone to wire cutting and turning.
次に、 上記実施の形態 1によるワイヤボンディング方法を用いて、 平面四 角形の半導体チップの 4辺に沿ったパッド （第 1ボンディング点） とリード (第 2ボンディング点）にワイヤボンディングを行い、それぞれのワイヤ（金 線） を引っ張って破断する荷重を測定する引張試験を行った。 上記実施の形 態 1によるワイヤボンディング方法と比較するために、 従来技術によるワイ ャボンディング方法を用いて、 パッド （第 1ボンディング点） とリード （第 2ボンディング点） にワイヤボンディングを行い、 それぞれのワイヤ （金線） についても引張試験を行った。 これらの試験結果を表 1に示す。  Next, wire bonding is performed on the pads (first bonding points) and leads (second bonding points) along the four sides of the planar rectangular semiconductor chip using the wire bonding method according to the first embodiment. A tensile test was conducted to measure the load at which the wire (gold wire) was broken by breaking. In order to compare with the wire bonding method according to the first embodiment, wire bonding is performed on the pad (first bonding point) and the lead (second bonding point) using the wire bonding method according to the prior art. A tensile test was also performed on (gold wire). Table 1 shows the results of these tests.
表 1において、 従来法は、 従来技術によるワイヤボンディング方法であつ て、 2 n dボンディングを 1回だけのボンディング動作で行ったものである。 この場合の 2 n dボンディングのボンディング動作時の超音波振動は従来か らある通常条件とした。  In Table 1, the conventional method is a conventional wire bonding method in which 2nd bonding is performed with only one bonding operation. In this case, the ultrasonic vibration during the bonding operation of 2nd bonding was performed under the usual conditions.
D S B (ダブルステッチボンディング） は、 上記実施の形態 1によるワイ ャボンディング方法であって、 2 n dボンディングを 2回のボンディング動 作で行ったものである。 この場合の 2 n dボンディングの 1回目のボンディ ング動作時の超音波振動は前記通常条件より低い設定とし、 2回目のボンデ イング動作時の超音波振動は前記通常条件より高い設定とした。 ここで示し た超音波振動の値以外のボンディング条件は、 従来法、 D S Bともに同様の ものとした。  DSB (double stitch bonding) is a wire bonding method according to the first embodiment, in which 2nd bonding is performed by two bonding operations. In this case, the ultrasonic vibration during the first bonding operation of 2nd bonding was set lower than the normal condition, and the ultrasonic vibration during the second bonding operation was set higher than the normal condition. Bonding conditions other than the ultrasonic vibration values shown here were the same for both the conventional method and DSB.
表 1において、 右辺は、 半導体チップの右辺に沿ったパッドを 1 s tボン デイングとしてワイヤである。 上辺は、 半導体チップの上辺に沿ったパッド を 1 s tボンディングとしてワイヤである。 左辺は、 半導体チップの左辺に 沿ったパッドを 1 s tボンディングとしてワイヤである。下辺は、半導体チッ プの下辺に沿ったパッドを 1 s tボンディングとしてワイヤである。 In Table 1, the right side is a wire with 1st bonding as the pad along the right side of the semiconductor chip. The upper side is a wire with the pad along the upper side of the semiconductor chip as 1st bonding. The left side is the left side of the semiconductor chip The pad along the 1st bonding is a wire. The lower side is a wire with the pad along the lower side of the semiconductor chip as the 1st bonding.
[表 1]  [table 1]
Figure imgf000012_0001
表 1に示すように、 上記実施の形態 1によるワイヤボンディング方法 （D SB) は、 従来法に比べて高い接合強度を有することが確認された。
Figure imgf000012_0001
As shown in Table 1, it was confirmed that the wire bonding method (DSB) according to the first embodiment has higher bonding strength than the conventional method.
図 5 (A) は、 表 1に示す D SBの下辺の 2 n dボンディング形状を示す 写真であり、 図 5 (B) は、 表 1に示す D S Bの右辺の 2 n dボンディング 形状を示す写真である。 図 5 (A), (B) に示すように、 実施の形態 1によ るワイヤボンディング方法では、 めくれ現象の発生は見られなかった。 図 10 (A) は、 表 1に示す従来法の 2 n dボンディング形状を示す写真 であり、 図 10 (B) は、 表 1に示す従来法の 2 n dボンディング形状を示 す写真である。 図 10 (A)， (B) に示すように、 従来法によるワイヤボン ディング方法では、 めくれ現象 19の発生が見られ、 ステッチ部の外観から も接合状態が悪いことが確認された。 Fig. 5 (A) is a photograph showing the 2nd bonding shape of the lower side of the DSB shown in Table 1, and Fig. 5 (B) is a photograph showing the 2nd bonding shape of the right side of the DSB shown in Table 1. . As shown in FIGS. 5 (A) and 5 (B), in the wire bonding method according to Embodiment 1, no turn-up phenomenon was observed. Fig. 10 (A) is a photograph showing the 2nd bonding shape of the conventional method shown in Table 1, and Fig. 10 (B) is a photograph showing the 2nd bonding shape of the conventional method shown in Table 1. As shown in Fig. 10 (A) and (B), in the wire bonding method by the conventional method, the turning phenomenon 19 is observed, and the appearance of the stitch part is observed. It was also confirmed that the bonding state was poor.
(実施の形態 2 )  (Embodiment 2)
図 6は、 本発明の実施の形態 2によるワイヤボンディング方法を模式的に 示す図であり、 図 2と同一部分については同一符号を付す。  FIG. 6 is a diagram schematically showing the wire bonding method according to the second embodiment of the present invention, and the same parts as those in FIG.
本実施の形態によるワイヤボンディング方法は、 2 n dボンディングを 3回のボンディング動作によって行うものである。  In the wire bonding method according to the present embodiment, 2nd bonding is performed by three bonding operations.
詳細には、 実施の形態 1と同様のワイヤボンディング装置を用い、 第 1ポ ンデイング点 Aに 1 s tボンディングを行う工程、 第 2ボンディング点 C及 び第 3ボンディング点 Eにボンディングを行う工程までは図 2に示すものと 同様である。 本実施の形態では、 図 6に示すように、 第 3ボンディング点 E にボンディング動作を行った後に、 キヤビラリ 4を任意に設定した高さの F 点まで上昇させ、 任意に設定した量 （数ミクロン） だけルービング方向 （第 1ボンディング点 Aと反対方向）にキヤビラリ 4を移動させながら下降させ、 第 4ボンディング点 Gに圧力を加えるとともに従来技術の 1回だけのボンデ ィング動作の場合に比べて低い超音波振動を加え、この動作を所定時間行う。 このように C点、 E点及び G点に 3回のボンディング動作を行うことにより、 2 n dボンディング点の接合強度を向上させる。  Specifically, using the same wire bonding apparatus as in the first embodiment, the process of performing 1st bonding at the first bonding point A, and the process of bonding at the second bonding point C and the third bonding point E This is the same as shown in Fig. 2. In the present embodiment, as shown in FIG. 6, after performing the bonding operation at the third bonding point E, the lift 4 is raised to the F point of the arbitrarily set height, and the arbitrarily set amount (several microns) ) Only when moving the 4 in the rubbing direction (opposite to the first bonding point A), lowering the pressure while applying pressure to the fourth bonding point G and lower than that of the conventional single bonding operation. Ultrasonic vibration is applied and this operation is performed for a predetermined time. In this way, the bonding strength at the 2nd bonding point is improved by performing the bonding operation three times at the C point, the E point and the G point.
尚、 第 3ボンディング点 Eと第 4ボンディング点 Gとの間隔は狭く、 2 n dボンディングのステッチ部に第 3ボンディング点と第 4ボンディング点が 重なる程度の狭い間隔が好ましい。  Note that the distance between the third bonding point E and the fourth bonding point G is narrow, and it is preferable that the distance be such that the third bonding point and the fourth bonding point overlap the stitch portion of the 2nd bonding.
上記実施の形態 2においても実施の形態 1と同様の効果を得ることができ る。  In the second embodiment, the same effect as in the first embodiment can be obtained.
また、 上記実施の形態 2では、 2 n dボンディングを 3回のボンディング 動作で行っているため、 各々のボンディング動作時の超音波振動の出力を実 施の形態 1の場合より低くすることも可能であり、 この場合はワイヤ切断の 発生をより抑制することができる。  In the second embodiment, since the 2nd bonding is performed by three bonding operations, the output of the ultrasonic vibration at each bonding operation can be made lower than that in the first embodiment. In this case, the occurrence of wire cutting can be further suppressed.
(実施の形態 3 )  (Embodiment 3)
図 7は、 本発明の実施の形態 3によるワイヤボンディング方法を模式的に 示す図であり、 図 6と同一部分については同一符号を付し、 異なる部分につ いてのみ説明する。 FIG. 7 schematically shows a wire bonding method according to Embodiment 3 of the present invention. The same parts as those in FIG. 6 are denoted by the same reference numerals, and only different parts will be described.
本実施の形態は、 上記実施の形態 2とは第 3ボンディング点及ぴ第 4ボン デイング点の位置が異なっている。 すなわち、 第 3ボンディング点 Cにボン ディングを行った後、キヤビラリを任意に設定した高さの D点まで上昇させ、 任意に設定した量 （数ミクロン） だけ任意に設定した方向 （ルービング方向 以外の方向は 3 6 0度の範囲の全てを含むが、 図 7ではルービング方向を例 示している） にキヤビラリを移動させながら下降させ、 第 3ボンディング点 Eに超音波振動及び圧力を加える。 次に、 キヤビラリを任意に設定した高さ の F点まで上昇させ、 任意に設定した量 （数ミクロン） だけ任意に設定した 方向 （ルービング方向以外の方向は 3 6 0度の範囲の全てを含むが、 図 7で はル一ビング方向と反対方向を例示している） にキヤビラリを移動させなが ら下降させ、 第 4ボンディング点 Gに超音波振動及ぴ圧力を加える。 このよ うに C点、 E点及ぴ G点に 3回のボンディング動作を行うことにより、 2 n dボンディング点の接合強度を向上させる。  This embodiment differs from the second embodiment in the positions of the third bonding point and the fourth bonding point. In other words, after bonding to the third bonding point C, the lift is raised to the point D of the arbitrarily set height, and the direction arbitrarily set by the arbitrarily set amount (several microns) (other than the rubbing direction) The direction includes the entire range of 360 degrees, but the rubbing direction is shown as an example in Fig. 7), and is moved downward while applying the vibration and pressure to the third bonding point E. Next, lift the fly up to point F of the arbitrarily set height, and set the direction arbitrarily by the amount (several microns) set arbitrarily (directions other than the rubbing direction include all of the 360 ° range) However, in Fig. 7, the direction opposite to the rubbing direction is shown as an example.) While moving the slide, lower it and apply ultrasonic vibration and pressure to the fourth bonding point G. In this way, the bonding strength of the 2nd bonding point is improved by performing the bonding operation three times at the C point, the E point and the G point.
上記実施の形態 3においても実施の形態 2と同様の効果を得ることができ る。  In the third embodiment, the same effect as in the second embodiment can be obtained.
尚、 本発明は上記実施の形態に限定されず、 本発明の主旨を逸脱しない範 囲内で種々変更して実施することが可能である。例えば、上記実施の形態 2， 3では、 2 n dボンディングを 3回のボンディング動作で行っている力 S、 2 n dボンディングを 4回以上のボンディング動作で行うことも可能である。 また、 上記実施の形態 1〜 3では、 2 n dボンディングにおいて複数回の ボンディング動作を行う際、 従来技術の 1回だけのボンディング動作の場合 に比べて低い超音波振動を印加しているが、 従来技術の 1回だけのボンディ ング動作の場合に比べて低いボンディング荷重を加え、 超音波振動の出力は 従来技術と同様とすることも可能であり、 また、 超音波振動及びボンディン グ荷重の両方を従来技術の 1回だけのボンディング動作の場合に比べて低く することも可能であり、 また 2 n dボンディングにおいて 1回目のボンディ ング動作で通常よりもワイヤを切断されにくい状態にすることができるため、 2回目以降のボンディング動作を行う際に超音波振動及びボンディング荷重 の両方を従来技術の 1回だけのボンディング動作に比べて高くすることも可 能である。 これらの場合においても上記実施の形態 1〜3と同様の効果を得 ることができる。 Note that the present invention is not limited to the above-described embodiment, and various modifications can be made without departing from the spirit of the present invention. For example, in the second and third embodiments, the force S in which 2nd bonding is performed by three bonding operations, and the 2nd bonding can be performed in four or more bonding operations. Further, in Embodiments 1 to 3 described above, when performing a plurality of bonding operations in 2nd bonding, lower ultrasonic vibration is applied than in the case of a single bonding operation of the prior art. Compared to the single bonding operation of the technology, a lower bonding load can be applied, and the output of ultrasonic vibration can be the same as that of the conventional technology, and both ultrasonic vibration and bonding load can be reduced. Compared to the conventional one-time bonding operation, it can be lowered, and the first bond in the 2nd bonding is possible. Since the wire can be made more difficult to cut the wire than usual during the bonding operation, both the ultrasonic vibration and the bonding load during the second and subsequent bonding operations are compared to the one-time bonding operation of the prior art. It can be raised. In these cases, the same effects as those of the first to third embodiments can be obtained.

Claims

請 求 の 範 囲 The scope of the claims
1 . キヤビラリから繰り出されたワイヤの先端にボールを形成し、 前記ボー ルを 1 s tボンディング点にボンディングし、 1. Form a ball at the tip of the wire drawn from the girder, bond the ball to the 1 st bonding point,
前記キヤビラリを 2 n dボンディング点に移動させ、 前記キヤビラリに よって複数回のボンディング動作を行うことにより前記 2 n dボンディング 点に前記ワイヤをボンディングすることを特徴とするワイヤボンディング方 法。  A wire bonding method characterized in that the wire is bonded to the 2nd bonding point by moving the chirality to a 2nd bonding point and performing a plurality of bonding operations with the chirality.
2 . 前記複数回のボンディング動作は、 前記キヤビラリを前記 2 n dボンデ ィング点に接触させて超音波振動を加えた後に、 前記キヤビラリを上昇及び 下降させ、 前記 2 n dボンディング点に前記キヤビラリを再び接触させて超 音波振動をカロえる動作を有するものであることを特徴とする請求項 1に記載 のワイヤボンディング方法。 2. In the plurality of bonding operations, after the ultrasonic wave is applied by bringing the capillary into contact with the 2nd bonding point, the capillary is lifted and lowered, and the capillary is again brought into contact with the 2nd bonding point. The wire bonding method according to claim 1, wherein the wire bonding method has an operation of generating ultrasonic vibrations.
3 . キヤビラリから繰り出されたワイヤの先端にポールを形成し、 前記ボー ルを第 1ボンディング点にポンデイングする第 1工程と、 3. a first step of forming a pole at the tip of the wire fed from the carrier and ponding the ball to the first bonding point;
前記キヤビラリを第 2ボンディング点に移動させ、 前記キヤビラリから前 記第 2ボンディング点に超音波振動を加えることにより前記第 2ボンディン グ点に前記ワイヤをボンディングする第 2工程と、  A second step of bonding the wire to the second bonding point by moving the chirality to a second bonding point and applying ultrasonic vibration from the chirality to the second bonding point;
前記キヤビラリを上昇及ぴ下降させ、 前記第 2工程によって形成されたス テツチ部に重なる位置の第 3ボンディング点に前記キヤビラリを接触させて 超音波振動を加える第 3工程と、  A third step of raising and lowering the above-mentioned chirality, bringing the above-mentioned chirality into contact with a third bonding point at a position overlapping the stitch portion formed in the above-mentioned second step, and applying ultrasonic vibration;
を具備することを特徴とするワイヤボンディング方法。 A wire bonding method comprising:
4 . 1 s tボンディング点と 2 n dボンディング点をワイヤによって接続す るワイヤボンディング装置において、 4.1 In wire bonding equipment that connects 1st bonding point and 2nd bonding point by wire,
前記ワイヤを繰り出すキヤビラリと、 前記キヤビラリを移動させる移動機構と、 A chain that feeds out the wire; A moving mechanism for moving the above-mentioned beam;
前記キヤビラリに超音波振動を加える振動機構と、  A vibration mechanism for applying ultrasonic vibrations to the above-mentioned beam;
前記キヤビラリを前記 2 n dボンディング点に移動させ、 前記キヤビラリ によって複数回のボンディング動作を行うことにより前記 2 n dボンディン グ点に前記ワイヤをボンディングするように制御する制御部と、  A control unit that controls the bonding of the wire to the 2nd bonding point by moving the chirality to the 2nd bonding point and performing a plurality of bonding operations by the chirality;
を具備することを特徴とするワイヤボンディング装置。  A wire bonding apparatus comprising:
5 . 前記制御部において前記 2 n dボンディング点に前記ワイヤをボンディ ングするように制御する際に行われる前記複数回のボンディング動作は、 前 記キヤビラリを前記 2 n dボンディング点に接触させて前記振動機構により 超音波振動を加えた後に、 前記キヤビラリを上昇及び下降させ、 前記 2 n d ボンディング点に前記キヤビラリを再び接触させて前記振動機構により超音 波振動を加える動作を有するものであることを特徴とする請求項 4に記載の ワイヤボンディング装置。 5. The plurality of bonding operations performed when the control unit performs control to bond the wire to the 2nd bonding point, and the vibration mechanism is brought into contact with the second bonding point. After the ultrasonic vibration is applied, the above-described operation is performed by raising and lowering the above-mentioned chirality, bringing the above-mentioned chirality into contact with the above-mentioned 2nd bonding point again, and applying the ultrasonic vibration by the vibration mechanism. The wire bonding apparatus according to claim 4.
6 . 第 1ボンディング点と第 2ボンディング点をワイヤによって接続するヮ ィャボンディング装置において、 6. In a wire bonding apparatus for connecting the first bonding point and the second bonding point by a wire,
前記ワイヤを繰り出すキヤビラリと、  A chain that feeds out the wire;
前記キヤビラリを移動させる移動機構と、  A moving mechanism for moving the above-mentioned beam;
前記キヤビラリに超音波振動を加える振動機構と、  A vibration mechanism for applying ultrasonic vibrations to the above-mentioned beam;
前記キヤビラリを第 2ポンディング点に移動させ、 前記キヤビラリから前 記第 2ボンディング点に前記振動機構によつて超音波振動を加えることによ - り前記第 2ボンディング点に前記ワイヤをボンディングした後に、 前記キャ ビラリを上昇及び下降させ、 前記第 2ボンディング点へのボンディングに よって形成されたステッチ部に重なる位置の第 3ボンディング点に前記キヤ ビラリを接触させて前記振動機構によって超音波振動を加えるように制御す る制御部と、  After bonding the wire to the second bonding point by moving the above-mentioned chirality to the second bonding point and applying ultrasonic vibration from the above-mentioned chirality to the above-mentioned second bonding point by the vibration mechanism. Raising and lowering the cavity, bringing the cavity into contact with the third bonding point at a position overlapping the stitch portion formed by bonding to the second bonding point, and applying ultrasonic vibration by the vibration mechanism A control unit for controlling
を具備することを特徴とするワイヤボンディング装置。  A wire bonding apparatus comprising:
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