JPS62276841A - Wire bonding - Google Patents

Wire bonding

Info

Publication number
JPS62276841A
JPS62276841A JP61119228A JP11922886A JPS62276841A JP S62276841 A JPS62276841 A JP S62276841A JP 61119228 A JP61119228 A JP 61119228A JP 11922886 A JP11922886 A JP 11922886A JP S62276841 A JPS62276841 A JP S62276841A
Authority
JP
Japan
Prior art keywords
wire
bonding
ball
bonded
pad
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP61119228A
Other languages
Japanese (ja)
Inventor
Makoto Nakajima
誠 中嶋
Toshio Chuma
中馬　俊夫
Yoshio Ohashi
芳雄 大橋
Kazuo Hatori
羽鳥　和夫
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP61119228A priority Critical patent/JPS62276841A/en
Publication of JPS62276841A publication Critical patent/JPS62276841A/en
Pending legal-status Critical Current

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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/02—Bonding areas ; Manufacturing methods related thereto
    • H01L24/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L24/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H—ELECTRICITY
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    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/0212—Auxiliary members for bonding areas, e.g. spacers
    • H01L2224/02122—Auxiliary members for bonding areas, e.g. spacers being formed on the semiconductor or solid-state body
    • H01L2224/02163—Auxiliary members for bonding areas, e.g. spacers being formed on the semiconductor or solid-state body on the bonding area
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    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/04042—Bonding areas specifically adapted for wire connectors, e.g. wirebond pads
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    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
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    • H01L2224/481—Disposition
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    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
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    • H01L2224/484—Connecting portions
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    • H01L2224/48453—Shape of the interface with the bonding area
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    • H01L2224/484—Connecting portions
    • H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
    • H01L2224/48465—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
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    • H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/78—Apparatus for connecting with wire connectors
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    • H01L2224/78251—Means for applying energy, e.g. heating means in the lower part of the bonding apparatus, e.g. in the apparatus chuck
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    • H01L2224/783—Means for applying energy, e.g. heating means by means of pressure
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    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
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    • H01L2224/85148—Aligning involving movement of a part of the bonding apparatus
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    • H01L2224/852—Applying energy for connecting
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    • H01L2224/85205—Ultrasonic bonding
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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Wire Bonding (AREA)

Abstract

PURPOSE:To improve bondability while bonding damages are being suppressed by a method wherein, after a wire is pressed against a part to be bonded, the wire and the part to be bonded are relatively moved back and forth. CONSTITUTION:A capillary 14 is descended by a bonding head 9 and a ball 5a formed at the tip of a wire 5 is pressed against the pad 2a of a pellet 2 gradually. At that time, an ultrasonic oscillator 12 oscillates and applies an ultrasonic energy to the ball 5a through an oscillator 13, a horn 11 and a capillary 14 to move the wire 5 and the pad 2a back and forth relatively with a small oscillation amplitude. By moving an X-Y table 8 reciprocally, the ball 5a is moved back and forth in parallel against the pad 2a with a large operation amplitude. With this constitution, oxide films or the like formed on the junction surfaces of the wire and the part to be bonded are easily broken and clean surfaces under the films can be exposed so that the part to be bonded is bonded with the wire satisfactorily.

Description

【発明の詳細な説明】 ３、発明の詳細な説明 Ｃ産業上の利用分野〕 本発明は、ワイヤボンディング技術、特に、ボンダビリ
ティ−の改良に関し、例えば、半導体装五の製造工程に
おいて、ベレットとリードとを電気的に接続するのに利
用して斉劾な技術に関する。Detailed Description of the Invention 3. Detailed Description of the Invention C Industrial Field of Application The present invention relates to wire bonding technology, particularly to improvement of bondability. This article relates to a technique that can be used to electrically connect leads.

〔従来の技術〕[Conventional technology]

半導体装置の製造工程において、ベレットのボンディン
グパノドとワイヤとを電気的に接続するワイヤボンディ
ング方法として、ボンディングツールとしてのキャピラ
リーに挿通されたワイヤの先端部に放電電照等を用いた
加熱熔融作用によりボールを形成させた後、このボール
を被ボンディング部であるペレットのボンディングバン
ドに加””ＭＴｌｌＴｌ１８−ｔ６　Ｌ　、！＝　ｂｂ
＝、＋−ｐｅ’ｒ’Ｊ　−’ｃｍ。In the manufacturing process of semiconductor devices, a wire bonding method that electrically connects the bonding panod of a pellet and a wire is performed by heating and melting the tip of the wire inserted into a capillary as a bonding tool using electrical discharge light, etc. After forming a ball, this ball is added to the bonding band of the pellet, which is the part to be bonded. = bb
=, +-pe'r'J-'cm.

て超音波エネルギを付勢することにより、ワイヤをパッ
ドに熱圧着させる超音波熱圧着式ワイヤボンディング方
法がある。There is an ultrasonic thermocompression wire bonding method in which a wire is thermocompression bonded to a pad by applying ultrasonic energy to the pad.

なお、ワイヤボンディング技術を述べである例としては
、株式会社工業調査会発行「電子材料１９８１年１１月
号別冊」昭和５６年１１月１０日発行　Ｐ１５６〜Ｐ１
６２、がある。An example that describes wire bonding technology is "Electronic Materials November 1981 Special Issue" published by Kogyo Research Association Co., Ltd., published on November 10, 1981, P156-P1.
There is 62.

〔発明が解決しようとする問題点〕[Problem that the invention seeks to solve]

しかし、このような超音波熱圧着式ワイヤボンディング
方法においては、ポリイミド樹脂膜を外周囲に形成処理
されたボンディングバンドに銅系材料を用いたワイヤを
ボンディングする場合、次のような問題点が発生すると
いう問題点があることが、本発明者によって明らかにさ
れた。However, in this ultrasonic thermocompression wire bonding method, the following problems occur when bonding a wire made of a copper-based material to a bonding band that has been treated to form a polyimide resin film around its outer periphery. The inventor of the present invention has discovered that there is a problem in that.

＋１１　　熱圧着後のボンディング部におけるボール形
状が不通正になる。+11 The shape of the ball at the bonding part becomes irregular after thermocompression bonding.

（２）ボンディング部の機械的強度が低下する。(2) The mechanical strength of the bonding portion is reduced.

（３）ボンディング強度を高めるため、超音波エネルギ
を増強させると、ボンディングダメージが発生する。(3) If the ultrasonic energy is increased in order to increase the bonding strength, bonding damage will occur.

本発明の目的は、ボンディングダメージを抑制しつつポ
ンダビリティ−を高めることができるワイヤボンディン
グ技術を提供することにある。An object of the present invention is to provide a wire bonding technique that can increase bondability while suppressing bonding damage.

本発明の前記ならびにその他の目的と新規な特徴は、本
明細書の記述および添付図面から明らかになるであろう
。The above and other objects and novel features of the present invention will become apparent from the description of this specification and the accompanying drawings.

Ｃ問題点を解決するための手段〕 本願において開示される発明のうち代表的なものの概要
を説明すれば、次の通りである。Means for Solving Problem C] Representative inventions disclosed in this application will be summarized as follows.

すなわち、ワイヤを被ボンディング部に押接させた後、
ワイヤが挿通されているボンディングツールと被ボンデ
ィング部とを動作幅の異なる少なくとも２つの動作振幅
で相対的に往復動させるようにしたものである。That is, after pressing the wire against the bonded part,
The bonding tool through which the wire is inserted and the part to be bonded are relatively reciprocated with at least two operating amplitudes having different operating widths.

〔作用〕[Effect]

前述した手段によれば、熱圧着された後のワイヤと被ボ
ンディング部との大きな動作Ｉ！ｉ幅の相対的往復動に
よって、ワイヤと被ボンディング部との接合面に酸化な
いし汚染されていない清浄面が形成されるため、小さな
動作振幅の超音波エネルギの付勢であっても良好なポン
ダビリティ−をもって、ボンディングダメージのない適
正なボンディングを実現させることができる。According to the above-mentioned means, there is a large movement I! between the wire and the bonded part after thermocompression bonding. Due to the relative reciprocating movement of i width, a clean surface that is not oxidized or contaminated is formed at the bonding surface between the wire and the bonded part, so that a good bonder can be obtained even when energized by ultrasonic energy with a small operating amplitude. With this ability, proper bonding without bonding damage can be realized.

〔実施例〕〔Example〕

第１図は本発明の一実施例であるワイヤボンディング方
法に使用される装置を示す概略正面図、第２図（ａｌ、
（ｂｌ、（Ｃ）はその作用を説明するための各線図、第
３図は同しく拡大部分断面図、第４図は同じく第３図■
邪の拡大部分断面図である。FIG. 1 is a schematic front view showing an apparatus used in a wire bonding method according to an embodiment of the present invention, and FIG.
(bl, (C) are each diagram for explaining the action, Figure 3 is an enlarged partial sectional view, Figure 4 is also Figure 3)
It is an enlarged partial sectional view of evil.

本実施例において、ワイヤポンディング装置は半導体装
￥ｔｌにおけるペレット２の電極バッド２ａとリードフ
レーム３のリード４とにワイヤ５をそれぞれボンディン
グすることにより、ペレット２と各リード４とを電気的
に接続するように構成されており、ペレット２がボンデ
ィングされたリードフレーム３をボンディングステージ
に供給するためのフィーダ６を備えている。フィーダ６
にはヒートブロック７がリードフレーム３を加熱し得る
ように設備されている。In this embodiment, the wire bonding device electrically connects the pellet 2 and each lead 4 by bonding the wire 5 to the electrode pad 2a of the pellet 2 and the lead 4 of the lead frame 3 in the semiconductor device. A feeder 6 is provided for feeding the lead frame 3 to which the pellets 2 are bonded to the bonding stage. Feeder 6
A heat block 7 is installed to heat the lead frame 3.

フィーダ６の片脇におけるポンディングステージに対応
する位置にはＸＹテーブル８が設備されており、ＸＹテ
ーブル８はＸＹ方向の運動を行うように構成されている
。ＸＹテーブル８上にはボンティングヘッド９が搭載さ
れており、ボンディングヘッド９はアーム１０に上下運
動を与えるように構成されている。アーム１０はボンデ
ィングヘッド９のフィーダ６側に突設されており、アー
ム１０にはホーン１１がその一端において略水平に支持
されている。アーム１０には超音波発振装置１２の発振
子１３が配設されており、発振子１３はホーン１１に超
音波振動を付勢するようになっている。An XY table 8 is installed at a position corresponding to the pounding stage on one side of the feeder 6, and the XY table 8 is configured to move in the XY directions. A bonding head 9 is mounted on the XY table 8, and the bonding head 9 is configured to give the arm 10 vertical movement. The arm 10 projects from the feeder 6 side of the bonding head 9, and a horn 11 is supported substantially horizontally at one end of the arm 10. An oscillator 13 of an ultrasonic oscillator 12 is disposed on the arm 10, and the oscillator 13 applies ultrasonic vibration to the horn 11.

示−７１１の先端部にはボンディングツールとしてのキ
ャピラリー１４が略垂直に垂下されて支持されており、
キャピラリー１４の下端部近傍位置には放電電極等から
なるトーチ１５がキャピラリー１４の下端から突出した
ワイヤ５の先端部を熔融し得るように設備されている。A capillary 14 as a bonding tool is suspended and supported approximately vertically from the tip of the figure 711.
A torch 15 made of a discharge electrode or the like is installed near the lower end of the capillary 14 so as to melt the tip of the wire 5 protruding from the lower end of the capillary 14 .

ワイヤ５はリール１６に繰り出し可能に巻装されており
、ワイヤ５に気体を吹き付けることによりバックテンシ
ョンを付勢せしめるノズル１７、ガイド１８およびクラ
ンパ１９を介してキャピラリー１４に走行可能に挿通さ
れている。The wire 5 is wound around a reel 16 so that it can be unwound, and is movably inserted into the capillary 14 via a nozzle 17, a guide 18, and a clamper 19 that apply back tension by blowing gas onto the wire 5. .

次に、第２図を参照して前記構成にかかるワイヤボンデ
ィング装置による本発明の一実施例であるワイヤボンデ
ィング方法を説明する。Next, a wire bonding method according to an embodiment of the present invention using the wire bonding apparatus having the above structure will be described with reference to FIG.

なお、第２図（ａ＋はキャピラリーの上下動を経時的に
示す線図、第２図（ｂｌは超音波発１辰装置のボンディ
ング時における発振を示す線図、第２図（Ｃ１はボンデ
ィング部における動きを模式的に示す線図である。In addition, FIG. 2 (a+ is a diagram showing the vertical movement of the capillary over time, FIG. 2 (bl is a diagram showing the oscillation during bonding of the ultrasonic generator), FIG. 2 (C1 is a diagram showing the bonding part FIG. 2 is a diagram schematically showing movements in FIG.

ベレット２をボンディングされているリードフレーム３
がフィーダ６におけるボンディングステージに供給され
ると、ＸＹテーブル８がＸＹ方向に適宜移動される。一
方、キャピラリー１４においては、トーチ１５によりワ
イヤ５の先端部にボール５ａが熔融形成される。Lead frame 3 to which pellet 2 is bonded
When the bonding stage of the feeder 6 is supplied, the XY table 8 is appropriately moved in the XY directions. On the other hand, in the capillary 14, a ball 5a is melted and formed at the tip of the wire 5 by a torch 15.

続いて、キャピラリー１４がボンディングヘッド９によ
り下降されてワイヤ５の先端部に形成されたボール５ａ
をベレット２のパッド２ａに徐々に埋着させる。このと
き、第２図（ｂｌに示されているように、超音波発振装
置１２が発振して超音波エネルギを発ノ辰子１３、ホー
ン１１、キャピラリー１４を通じてボールに付勢させ、
小さい動作振幅でワイヤ５とパッド２ａを相対的に往復
動させる。同時に、本実施例においては、ＸＹテーブル
８が往復動されることにより、第３図に示されているよ
うに、ボール５ａがパッド２ａに対して平行に大きな動
作振幅で往復動（以下、スクライブという。）される。Subsequently, the capillary 14 is lowered by the bonding head 9 to form a ball 5a at the tip of the wire 5.
is gradually embedded in the pad 2a of the pellet 2. At this time, as shown in FIG. 2 (bl), the ultrasonic oscillator 12 oscillates to apply ultrasonic energy to the ball through the oscillator 13, the horn 11, and the capillary 14,
The wire 5 and the pad 2a are relatively reciprocated with a small operating amplitude. At the same time, in this embodiment, as the XY table 8 is reciprocated, as shown in FIG. ) to be done.

したがって、ボール５ａおよびパッド２ａの相対的な動
きは第２図ｔｃ＋に示す通り異なる２つの動作振幅で行
われることになる。Therefore, the relative movement of the ball 5a and the pad 2a is performed with two different motion amplitudes as shown in FIG. 2 tc+.

尚、２つの異なる動作振幅は同図に示されるように異な
る周波数で付勢するのがパ・７ド２ａやワイヤ５の表面
に形成された酸化膜ないし汚れを除去するのに良い。ま
た、異なる動作速度で相対的往復動させても良いことは
いうまでもない。第２図ｆＣ１中、縦軸は水平方向の振
幅を示している。以上、第２図のｔ　Ｏ＝　ｔ　１間参
照。Incidentally, it is better to apply the two different operating amplitudes at different frequencies as shown in the figure in order to remove the oxide film or dirt formed on the surface of the pad 7 and the wire 5. Moreover, it goes without saying that relative reciprocating motion may be performed at different operating speeds. In FIG. 2 fC1, the vertical axis indicates the amplitude in the horizontal direction. For the above, refer to the interval t O = t 1 in Fig. 2.

第１ボンディング部が形成された後、キャビラＩＪ　−
１４がＸＹテーブル８およびボンディングヘッド９によ
り３次元的に相対移動され、所定のリード４にワイヤ５
の中間部を圧接させる。以上、第２図の【１〜ｔ２間参
照。After the first bonding part is formed, the cab IJ -
14 is relatively moved three-dimensionally by the XY table 8 and the bonding head 9, and the wire 5 is attached to a predetermined lead 4.
press the middle part of the For the above, refer to the period [1 to t2 in FIG. 2].

ここで、キャピラリー１４が第１ボンディング部から第
２ボンディング部に移動する間に、ワイヤ５はキャピラ
リー１４から相対的に繰り出され、このワイヤの繰り出
し量により、ベレット２とリード４との間に架橋される
ボンディングワイヤのループ形状が現定される。Here, while the capillary 14 is moving from the first bonding part to the second bonding part, the wire 5 is relatively paid out from the capillary 14, and the amount of wire paid out creates a bridge between the pellet 2 and the lead 4. The loop shape of the bonding wire to be used is defined.

ワイヤ５の中間部がリード４に埋着されると、第２図＋
ｂｌおよび（ｃｌに示されているように、超音波発振装
置１２が発１辰して超音波エネルギを発振子ｚ３、ホー
ン１１、キャピラリー１４を通してワイヤ５とリード４
とに付勢させる。これにより、ワイヤ５はリード・ｔに
第２ボンデイングされる。When the middle part of the wire 5 is embedded in the lead 4, as shown in FIG.
As shown in bl and (cl), the ultrasonic oscillator 12 emits ultrasonic energy to the wire 5 and lead 4 through the oscillator z3, the horn 11, and the capillary 14.
energize it. Thereby, the wire 5 is second bonded to the lead t.

以上、第２図のむ２〜ｔ３参膿。The above is Fig. 2 Nomu 2 to t3 pus.

第２ボンデイングが終了すると、クランパＩ９がワイヤ
５を把持し、クランパ１９はキャピラリー１４と共に第
２ボンディング部に相対的に離反移動される。この離反
移動により、ワイヤ５は第２ボンディング部から引き千
切られる。その後、クランパ１９がワイヤ５の把持を解
除するとともに、キャピラリー１４が若干上昇すること
により、ワイヤ５の先端部が前記ボール５ａの成形に必
要な長さだけ突き出される（テール出し）。以上、第２
図のし３〜ｔ４間参照。When the second bonding is completed, the clamper I9 grips the wire 5, and the clamper 19 is moved away from the capillary 14 relative to the second bonding portion. This separation movement causes the wire 5 to be torn off from the second bonding portion. Thereafter, the clamper 19 releases its grip on the wire 5, and the capillary 14 rises slightly, so that the tip of the wire 5 is protruded by a length necessary to form the ball 5a (tail extension). That’s all, Part 2
See between 3 and t4 in the figure.

ところで、第３図に示されているように、ベレット２に
保護膜としてのポリイミド樹脂膜２１がリンシリコンガ
ラス（ｐｓｃ）膜２ｏ上に被着された場合、銅を用いた
ワイヤ５をボンディングすると、ボンダビリティ−が低
下するという問題点があることが、本発明者によって明
らかにされた。By the way, as shown in FIG. 3, when the polyimide resin film 21 as a protective film is deposited on the phosphorus silicon glass (PSC) film 2o of the pellet 2, bonding the wire 5 made of copper The inventor of the present invention has revealed that there is a problem in that bondability is reduced.

この原因の一つは、ボンディングの前工程において、ベ
レット２のパッド２ａ上に被着したポリイミド樹脂膜２
１を二ノチング処理により除去してパッド２ａ面を露出
させるが、この際、ポリイミド系樹脂膜２１のエツチン
グ時にポリイミド系樹脂ｙＩ２１から不純物ガスまたは
不純物物質が発生し、アルミニュームを用いて形成され
たバッド２ａの表面が荒れるとともに、表面に酸化膜な
いしは不純物膜が比較的厚く形成されるため、バッド２
ａのボンディング面において清浄面が出にくくなり、そ
の結果、ボンダビリティ−が低下することにあると、考
えられる。One of the reasons for this is that the polyimide resin film 2 deposited on the pad 2a of the pellet 2 in the pre-bonding process.
1 is removed by a double notching process to expose the surface of the pad 2a, but at this time, impurity gas or impurity substances are generated from the polyimide resin yI 21 during etching of the polyimide resin film 21, and the pad 2a is formed using aluminum. The surface of the pad 2a becomes rough and a relatively thick oxide film or impurity film is formed on the surface.
It is thought that this is due to the fact that it becomes difficult for a clean surface to appear on the bonding surface of a, resulting in a decrease in bondability.

また、原因の他の一つは、銅は酸化ないし変質され易い
ため、銅ワイヤ５の先端に溶融形成されるボール５ａの
表面に酸化膜ないしは不純物膜（以下、バンド側の膜を
含めて酸化膜２２という。Another reason is that copper is easily oxidized or altered, so the surface of the ball 5a that is melted and formed at the tip of the copper wire 5 has an oxide film or an impurity film (hereinafter, oxidized film including the band side film). It is called a membrane 22.

）が、金ワイヤ等の場合に比べて比較的厚（形成される
ため、ワイヤ側においても清浄面が出にくくなり、その
結果、ボンダビリティ−が低下することにあると、考え
られる。) is formed relatively thicker than in the case of gold wire, etc., so it is difficult to expose a clean surface on the wire side, and as a result, it is thought that bondability deteriorates.

しかし、本実施例においては、前述したように第１ポン
デイングが実施される際、ワイヤ５のボール５ａがバッ
ド２ａに押着されると、超音波エネルギの付勢の初期に
おいてボール５ａがスクライブされるため、ポリイミド
膜２１が形成されたペレット２であっても、そのバッド
２ａに銅ワイヤ５のボール５ａが良好なボンダビリティ
−をもってボンディングされることになる。However, in this embodiment, when the first pounding is performed as described above, when the ball 5a of the wire 5 is pressed against the pad 2a, the ball 5a is scribed in the initial stage of the application of ultrasonic energy. Therefore, even if the pellet 2 has the polyimide film 21 formed thereon, the ball 5a of the copper wire 5 can be bonded to the pad 2a with good bondability.

すなわち、第４図に示されているように、バッド２ａと
銅ワイヤ５のボール５ａとの接合面に比較的厚く形成さ
れた酸化膜２２は、ボール５ａにスクライブを加えられ
ることにより、容易に崩壊されるため、接合面には酸化
膜２２下の清浄面２３が露出されることになる。そして
、この清浄面２３は金属結合性がきわめて良好であるた
め、アルミニュームのバッド２ａと洞ワイヤ５のボール
５ａとはきわめて容易かつ強固に結合することになる。That is, as shown in FIG. 4, the relatively thick oxide film 22 formed on the bonding surface between the pad 2a and the ball 5a of the copper wire 5 is easily removed by scribing the ball 5a. Since it is destroyed, the clean surface 23 under the oxide film 22 is exposed at the bonding surface. Since this clean surface 23 has extremely good metal bonding properties, the aluminum pad 2a and the ball 5a of the hollow wire 5 are bonded very easily and firmly.

ここで、前記酸化膜２２を崩壊させる手段として、超音
波エネルギを増強させることが一般的に考えられるが、
超音波エネルギを増強させると、ボンディング後のボー
ルの形状が悪くなったり、ボンディングダメージが大き
くなってペレットのバッド付近にクランク等の損傷が発
生する。Here, as a means to collapse the oxide film 22, it is generally considered that the ultrasonic energy is increased.
If the ultrasonic energy is increased, the shape of the ball after bonding will deteriorate, and bonding damage will increase, causing damage such as a crank near the butt of the pellet.

本実施例においては、ワイヤのボールをスクライブさせ
ることにより、酸化膜２２を崩壊させるため、ボンディ
ングダメージが過大化することは回避することができ、
その結果、ペレットのｔｆＡ　（１；の発生やボールの
変形等を防止することができる。In this embodiment, the oxide film 22 is destroyed by scribing the ball of the wire, so it is possible to avoid excessive bonding damage.
As a result, it is possible to prevent the occurrence of tfA (1;) in the pellet and deformation of the ball.

前記実施例によれば次の効果が得られる。According to the embodiment described above, the following effects can be obtained.

（１）第１ボンデイングが実施される際、ワイヤのボー
ルがバッドに押着された後、超音波エネルギの付勢初期
にボールをスクライブさせることにより、バッドとワイ
ヤのボールとの接合面に比較的厚く形成された酸化膜を
容易に崩壊させて酸化膜下の清浄面を露出させることが
できるため、ワイヤとバンドとを良好なボンダビリティ
−をもってボンディングさせることができる。(1) When performing the first bonding, after the ball of the wire is pressed against the pad, the ball is scribed at the beginning of the application of ultrasonic energy, so that the bonding surface between the pad and the ball of the wire is compared. Since a thickly formed oxide film can be easily collapsed to expose a clean surface under the oxide film, the wire and band can be bonded with good bondability.

（２）比較的厚く形成された酸化膜を崩壊させて適正な
ボンディングを実施させることができるため、ペレット
にポリイミド膜が形成されて、酸化膜が厚く形成された
アルミニュームバンドについても、酸化膜が厚く形成さ
れた銅ワイヤのボールを、良好なボンダビリティ−をも
ってボンディングすることができ、その結果、銅ワイヤ
の使用によりコストを低減化させることができるととも
に、ポリイミド膜の被着によりペレットを確実に保護さ
せることができる。(2) Since it is possible to disintegrate a relatively thick oxide film and perform proper bonding, a polyimide film is formed on the pellet, and even on an aluminum band with a thick oxide film, the oxide film can be removed. It is possible to bond balls of copper wire formed with a thick layer with good bondability.As a result, the cost can be reduced by using copper wire, and the pellet can be secured by coating with polyimide film. can be protected by

（３）　ボールをスクライブさせることによって酸化膜
の崩壊を促進させるものであるため、超音波エネルギの
パワーを抑制することができ、その結果、ペレットの損
傷やボールの不正変形の発生等を防止することができる
。(3) By scribing the ball, the collapse of the oxide film is promoted, so the power of the ultrasonic energy can be suppressed, and as a result, damage to the pellet and improper deformation of the ball can be prevented. be able to.

（４）良好なボンダビリティ−を実現することにより、
ボンディングの品質および信頼性を高めることができる
ため、製品歩留りを高めることができる。(4) By achieving good bondability,
Since bonding quality and reliability can be improved, product yield can be increased.

以上本発明者によってなされた発明を実施例に基づき具
体的に説明したが、本発明は前記実施例に限定されるも
のではなく、その要旨を逸脱しない範囲で種々変更可能
であることはいうまでもない。Although the invention made by the present inventor has been specifically explained above based on Examples, it goes without saying that the present invention is not limited to the Examples and can be modified in various ways without departing from the gist thereof. Nor.

例えば、超音波エネルギの付勢中にスクライブさせるに
躍らず、第５図に示されているように、超音波エネルギ
が付勢される直前にスクライブさせるようにしてもよい
。For example, instead of scribing while the ultrasonic energy is applied, the scribing may be performed immediately before the ultrasonic energy is applied, as shown in FIG.

ボール側をスクライブさせるに限らず、ペレットのバッ
ド（則をスクライブさせてもよく、要は、ボールとペレ
ットとが相対的にスクライブされればよい。It is not limited to scribing the ball side, but it is also possible to scribe the bad part of the pellet. In short, it is sufficient if the ball and the pellet are scribed relatively to each other.

以上の説明では主として本発明者によってなされた発明
をその背景となった利用分野である半導体装置に対する
ワイヤボンディング方法に通用した場合について説明し
たが、それに限定されるものではな（、その他の電子部
品や電子機器等に対するワイヤボンディング方法全般に
通用することができる。In the above explanation, the invention made by the present inventor was mainly applied to a wire bonding method for semiconductor devices, which is the background field of application, but is not limited thereto (and other electronic components). The present invention can be applied to all wire bonding methods for electronic devices, electronic devices, and the like.

〔発明の効果〕〔Effect of the invention〕

本願において開示される発明のうち代表的なものによっ
て得られる効果を簡単に説明すれば、次の通りである。A brief explanation of the effects obtained by typical inventions disclosed in this application is as follows.

ワイヤが被ボンディング部に挿着された後、超音波エネ
ルギの付勢以前にワイヤおよび被ボンディング部を相対
的にスクライブさせることにより、ワイヤと被ボンディ
ング部との接合面に形成された酸化膜等を容易に崩壊さ
せて膜下のｌｎ浄面を露出させることができるため、ワ
イヤと被ボンディング部とを適正にボンディングさせる
ことができる。After the wire is inserted into the bonding target part, by scribing the wire and the bonding target relatively before applying ultrasonic energy, an oxide film etc. is formed on the bonding surface between the wire and the bonding target part. The wire can be easily collapsed to expose the ln clean surface under the film, so that the wire and the bonding target part can be properly bonded.

【図面の簡単な説明】[Brief explanation of the drawing]

第１図は本発明の一実施例であるワイヤボンディング方
法に使用される装置を示す順路正面図、第２図ｔａ＋、
（ｂｌ、（Ｃ１はその作用を説明するための各線図、 第３図は同じく拡大部分断面図、 第４図は同しく第３図■部の拡大部分断面図である。 第５図（ａｌ、（ｂｌ、ＦＣ＋は本発明の他の実施例を
示す第２図に相当する各線図である。 １・・・半導体装置、２・・・ペレット、２ａ・・・ポ
ンディングパッド、３・・・リードフレーム、４・・・
リード、５・・・ワイヤ、５ａ・・・ボール、６・・・
フィーダ、７・・・ヒートブロック、８・・・Ｘｙ子テ
ーブル９・・・ボンディングヘッド、１０・・・アーム
、ＩＩ・・・ホーン、１２・・・超音波発振装置、１３
・・・発振子、１４・・・キャピラリー（ボンディング
ツール）、１５・・・トーチ、１６・・・リール、１７
・・・ノズル、１８・・・ガイド、１９・・・クランパ
、２０・・・ＰＳＧＩ９！、２１・・・ポリイミド樹脂
膜、２２・・・酸化膜、２３・・・清浄面。 ７′ 第　　２　　図FIG. 1 is a front view showing a device used in a wire bonding method according to an embodiment of the present invention, FIG.
(bl, (C1 is each diagram for explaining the action, FIG. 3 is an enlarged partial cross-sectional view, and FIG. 4 is an enlarged partial cross-sectional view of the part ■ in FIG. 3. , (bl, FC+ are diagrams corresponding to FIG. 2 showing other embodiments of the present invention. 1... Semiconductor device, 2... Pellet, 2a... Bonding pad, 3...・Lead frame, 4...
Lead, 5...wire, 5a...ball, 6...
Feeder, 7... Heat block, 8... Xy child table 9... Bonding head, 10... Arm, II... Horn, 12... Ultrasonic oscillator, 13
...Resonator, 14... Capillary (bonding tool), 15... Torch, 16... Reel, 17
...Nozzle, 18...Guide, 19...Clamper, 20...PSGI9! , 21... Polyimide resin film, 22... Oxide film, 23... Clean surface. 7' Fig. 2

Claims (1)

【特許請求の範囲】 １、ワイヤを被ボンディング部に押接させた後、前記ワ
イヤが挿通されているボンディングツールと前記被ボン
ディング部とを動作幅の異なる少なくとも２つの動作振
幅で相対的に往復動させることを特徴とするワイヤボン
ディング方法。 ２、前記２つの異なる振幅幅が、異なる周波数であるこ
とを特徴とする特許請求の範囲第１項記載のワイヤボン
ディング方法。 ３、前記２つの異なる動作振幅の内の１つの動作振幅が
超音波エネルギによって生じ、その動作振幅は他の１つ
の動作振幅より小さいことを特徴とする特許請求の範囲
第１項記載のボンディング方法。 ４、相対的往復動が、超音波エネルギの付勢中に行われ
ることを特徴とする特許請求の範囲第１項記載のワイヤ
ボンディング方法。 ５、相対的往復動が、超音波エネルギ付勢時よりも前に
行われることを特徴とする特許請求の範囲第１項記載の
ワイヤボンディング方法。 ６、前記ワイヤと被ボンディング部との押接時に、上記
ワイヤと上記被ボンディング部とが加熱されていること
を特徴とする特許請求の範囲第１項から第５項のいずれ
かに記載のボンディング方法。[Claims] 1. After pressing the wire against the bonding target part, the bonding tool through which the wire is inserted and the bonding target part are relatively reciprocated at at least two operating amplitudes having different operating widths. A wire bonding method characterized by moving the wire. 2. The wire bonding method according to claim 1, wherein the two different amplitude widths are different frequencies. 3. The bonding method according to claim 1, wherein one of the two different operating amplitudes is caused by ultrasonic energy, and the operating amplitude is smaller than the other one of the operating amplitudes. . 4. The wire bonding method according to claim 1, wherein the relative reciprocating movement is performed during application of ultrasonic energy. 5. The wire bonding method according to claim 1, wherein the relative reciprocating movement is performed before the ultrasonic energy is applied. 6. The bonding according to any one of claims 1 to 5, wherein the wire and the bonded part are heated when the wire and the bonded part are pressed together. Method.
JP61119228A 1986-05-26 1986-05-26 Wire bonding Pending JPS62276841A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP61119228A JPS62276841A (en) 1986-05-26 1986-05-26 Wire bonding

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP61119228A JPS62276841A (en) 1986-05-26 1986-05-26 Wire bonding

Publications (1)

Publication Number Publication Date
JPS62276841A true JPS62276841A (en) 1987-12-01

Family

ID=14756129

Family Applications (1)

Application Number Title Priority Date Filing Date
JP61119228A Pending JPS62276841A (en) 1986-05-26 1986-05-26 Wire bonding

Country Status (1)

Country Link
JP (1) JPS62276841A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5340010A (en) * 1991-04-16 1994-08-23 Kabushiki Kaisha Shinkawa Bonding apparatus
CN106158798A (en) * 2016-07-11 2016-11-23 中航（重庆）微电子有限公司 A kind of chip structure and method for packing thereof
JP2017168735A (en) * 2016-03-17 2017-09-21 豊田合成株式会社 Wire bonding method

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5340010A (en) * 1991-04-16 1994-08-23 Kabushiki Kaisha Shinkawa Bonding apparatus
JP2017168735A (en) * 2016-03-17 2017-09-21 豊田合成株式会社 Wire bonding method
CN106158798A (en) * 2016-07-11 2016-11-23 中航（重庆）微电子有限公司 A kind of chip structure and method for packing thereof

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