JPS59208844A - Face-down bonder - Google Patents

Face-down bonder

Info

Publication number
JPS59208844A
JPS59208844A JP8265283A JP8265283A JPS59208844A JP S59208844 A JPS59208844 A JP S59208844A JP 8265283 A JP8265283 A JP 8265283A JP 8265283 A JP8265283 A JP 8265283A JP S59208844 A JPS59208844 A JP S59208844A
Authority
JP
Japan
Prior art keywords
semiconductor element
face
bonding
materials
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP8265283A
Other languages
Japanese (ja)
Inventor
Ken Okuya
謙 奥谷
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP8265283A priority Critical patent/JPS59208844A/en
Publication of JPS59208844A publication Critical patent/JPS59208844A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies
    • H01L24/75—Apparatus for connecting with bump connectors or layer connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161—Disposition
    • H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/75—Apparatus for connecting with bump connectors or layer connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/75—Apparatus for connecting with bump connectors or layer connectors
    • H01L2224/7525—Means for applying energy, e.g. heating means
    • H01L2224/753—Means for applying energy, e.g. heating means by means of pressure
    • H01L2224/75301—Bonding head
    • H01L2224/75302—Shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/75—Apparatus for connecting with bump connectors or layer connectors
    • H01L2224/7525—Means for applying energy, e.g. heating means
    • H01L2224/753—Means for applying energy, e.g. heating means by means of pressure
    • H01L2224/75301—Bonding head
    • H01L2224/75302—Shape
    • H01L2224/75303—Shape of the pressing surface
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/75—Apparatus for connecting with bump connectors or layer connectors
    • H01L2224/757—Means for aligning
    • H01L2224/75743—Suction holding means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01013—Aluminum [Al]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01029—Copper [Cu]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01079—Gold [Au]

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Wire Bonding (AREA)
  • Die Bonding (AREA)

Abstract

PURPOSE:To use even materials except solder as bump materials by bonding a semiconductor element with a substrate while being given an ultrasonic vibration. CONSTITUTION:A face-down bonded semiconductor element 6 is sucked into the opening section 5 of the lower surface of a vacuum suction nozzle 4 under vacuum, and positioned so that bump materials 7 for the semiconductor element 6 are positioned at the position of bonding of a substrate 9. When an ultrasonic vibration from a vibrator 1 is transmitted over the semiconductor element 6 through a horn 2 and the vacuum suction nozzle 4 under the state, the bump materials 7 for said semiconductor element 6 are bonded at the predetermined position of bonding by the ultrasonic vibration action. Accordingly, the semiconductor element 6 is face-down bonded on the substrate 9 through the bump materials 7. Materials, such as aluminum, gold, copper, etc. are also used besides solder as a material for the bump materials.

Description

【発明の詳細な説明】 ［技術分野］ 本発明はボンディング技術、特に半導体素子をフェイス
ダウンボンディングにより基板上に実装するのに有効な
ボンディング技術に関するものである。DETAILED DESCRIPTION OF THE INVENTION [Technical Field] The present invention relates to bonding technology, and particularly to a bonding technology effective for mounting semiconductor elements on a substrate by face-down bonding.

［背景技術］ 半導体素子をフェイスダウンボンディングにより基板上
に実装する場合、半導体素子のボンディング面側に突設
した半田バンプを加熱して溶融させることにより、半導
体素子を基板上にボンディングすることが考えられる。[Background Art] When mounting a semiconductor element on a substrate by face-down bonding, it is considered that the semiconductor element is bonded onto the substrate by heating and melting solder bumps protruding from the bonding surface side of the semiconductor element. It will be done.

しかしながら、このフェイスダウンボンディング方式で
は、加熱時の熱応力により半田が疲労破壊を起こし、信
頼性の低下を来す原因になる等の問題がある。However, this face-down bonding method has problems such as fatigue failure of the solder due to thermal stress during heating, which causes a decrease in reliability.

［発明の目的］ 本発明の目的は、フェイスダウンボンディング用のバン
プ材として半田以外の材料も使用できるフェイスダウン
ボンディング技術を提供することにある。[Object of the Invention] An object of the present invention is to provide a face-down bonding technique that allows the use of materials other than solder as a bump material for face-down bonding.

本発明の他の目的は、ボンディング時の熱応力に起因す
る信頼性の低下を防止することのできるフェイスダウン
ボンディング技術を提供することにある。Another object of the present invention is to provide a face-down bonding technique that can prevent reliability from decreasing due to thermal stress during bonding.

本発明の前記ならびにその他の目的と新規な特徴は、本
明細書の記述および添付図面から明らかになるであろう
。The above and other objects and novel features of the present invention will become apparent from the description of this specification and the accompanying drawings.

［発明の概要］ 本願において開示される発明のうち代表的なものの概要
を簡単に説明すれば、次の通りである。[Summary of the Invention] A brief overview of typical inventions disclosed in this application is as follows.

すなわち、半導体素子に超音波振動を与えることにより
、半田以外の材料をバンプ材として使用できるようにし
、また半田の溶融に要求されるような高熱を必要とする
ことなくボンディングを行うことができ、熱応力に起因
する信頼性の低下を防止できるフェイスダウンボンディ
ング技術を得るものである。That is, by applying ultrasonic vibration to a semiconductor element, materials other than solder can be used as bump materials, and bonding can be performed without the need for high heat required to melt solder. The present invention provides face-down bonding technology that can prevent reliability degradation caused by thermal stress.

［実施例１］ 第１図は本発明の一実施例であるフェイスダウンボンダ
ーの概略を部分的に示す説明図である。[Example 1] FIG. 1 is an explanatory diagram partially showing an outline of a face-down bonder that is an example of the present invention.

この実施例において、超音波振動発生用の発振子１はホ
ーン２の基端側に設けられている。このホーン２の基端
側は図示しないＸＹテーブルの上に支持され、上下動用
カム３によりホーン２の先端を上下動させることができ
る。In this embodiment, an oscillator 1 for generating ultrasonic vibrations is provided on the base end side of a horn 2. The proximal end of the horn 2 is supported on an XY table (not shown), and the tip of the horn 2 can be moved up and down by a vertical movement cam 3.

一方、ホーン２の先端には、真空吸着ノズル４が垂直方
向に向けて配設されている。この真空吸着ノズル４はそ
の下面の開口部５内に、フェイスダウンボンディング用
のハンプ材７を下面に有する半導体素子６のパッケージ
を真空吸着することができる。この真空吸着を可能にす
るため、真空吸着ノズル４の上端には、真空吸引ホース
８が接続されている。On the other hand, at the tip of the horn 2, a vacuum suction nozzle 4 is arranged vertically. This vacuum suction nozzle 4 is capable of vacuum suctioning a package of a semiconductor element 6 having a hump material 7 for face-down bonding on its lower surface into an opening 5 on its lower surface. To enable this vacuum suction, a vacuum suction hose 8 is connected to the upper end of the vacuum suction nozzle 4.

次に、本実施例の作用について説明する。Next, the operation of this embodiment will be explained.

フェイスダウンボンディングされる半導体素子６は真空
吸着ノズル４の下面の開口部５内に真空吸着され、第２
図に示すように、その半導体素子６のバンプ材７が基板
９のボンディング位置に来るように位置決めされる。The semiconductor element 6 to be face-down bonded is vacuum suctioned into the opening 5 on the lower surface of the vacuum suction nozzle 4, and the second
As shown in the figure, the bump material 7 of the semiconductor element 6 is positioned at the bonding position of the substrate 9.

この状態で発振子ｌからの超音波振動をホーン２、真空
吸着ノズル４を介して半導体素子６に与えると、その超
音波振動作用により該半導体素子６のバンプ材７は基板
９の所定ボンディング位置に接合される。In this state, when ultrasonic vibration from the oscillator l is applied to the semiconductor element 6 via the horn 2 and the vacuum suction nozzle 4, the bump material 7 of the semiconductor element 6 is moved to a predetermined bonding position on the substrate 9 by the ultrasonic vibration action. is joined to.

それによって、半導体素子６はバンプ材７を介して基板
９上にフェイスダウンボンディングされる。Thereby, the semiconductor element 6 is face-down bonded onto the substrate 9 via the bump material 7.

本実施例においては、超音波振動を用いたフェイスダウ
ンボンディングであるため、バンプ材７の材料としては
、半田の他に、アルミニウム、金、銅等の材料も使用で
きる。In this embodiment, since face-down bonding is performed using ultrasonic vibration, materials such as aluminum, gold, copper, etc. can be used in addition to solder as the material for the bump material 7.

また、超音波振動によるフェイスダウンボンディングで
あるので、加熱を行う必要がなく、低温プロセスとして
ボンディング作業を行うことができ加熱時の熱応力に起
因する信頼性の低下の如き問題を生じることがない。In addition, since face-down bonding is performed using ultrasonic vibration, there is no need for heating, and the bonding work can be performed as a low-temperature process, eliminating problems such as reduced reliability caused by thermal stress during heating. .

［実施例２］ 第３図は本発明の他の実施例の−っであるフェイスダウ
ンボンダーを示す概略説明図である。[Embodiment 2] FIG. 3 is a schematic explanatory diagram showing a face-down bonder according to another embodiment of the present invention.

この実施例では、ホーン２と発振子１を真空吸着ノズル
４の上端部に設け、真空吸引ホース８を真空吸着ノズル
４の側部に接続し、さらに該真空吸着ノズル４を半導体
素子６の移送用のアーム１０で保持している。In this embodiment, a horn 2 and an oscillator 1 are provided at the upper end of a vacuum suction nozzle 4, a vacuum suction hose 8 is connected to a side of the vacuum suction nozzle 4, and the vacuum suction nozzle 4 is used for transferring a semiconductor element 6. It is held by an arm 10.

この実施例の場合にも、発振子１の超音波振動を利用し
て良好なフェイスダウンボンディングを行うことができ
る。Also in the case of this embodiment, good face-down bonding can be performed using the ultrasonic vibration of the oscillator 1.

［効果］ （１）、超音波振動を用いてフェイスダウンボンディン
グを行うので、半導体素子のバンプ材の材料として、半
田の他に、アルミニウム、金、銅等の様々な材料を使用
することができる。[Effects] (1) Since face-down bonding is performed using ultrasonic vibration, various materials such as aluminum, gold, copper, etc. can be used in addition to solder as bump materials for semiconductor devices. .

（２）、超音波振動を用いたフェイスダウンボンディン
グであるので、加熱を必要とせず、低温プロセスとして
ボンディングを行うことができ、加熱による熱応力に起
因する信頼性の低下等を起こすことが防止される。(2) Since face-down bonding uses ultrasonic vibration, bonding can be performed as a low-temperature process without the need for heating, which prevents reliability degradation caused by thermal stress caused by heating. be done.

以上本発明者によってなされた発明を実施例に基づき具
体的に説明したが、本発明は前記実施例に限定されるも
のではなく、その要旨を逸脱しない範囲で種々変更可能
であることはいうまでもない。Although the invention made by the present inventor has been specifically explained above based on Examples, it goes without saying that the present invention is not limited to the Examples and can be modified in various ways without departing from the gist thereof. Nor.

たとえば、フェイスダウンボンディングされる半導体素
子を保持する手段としては、前記実施例における真空吸
着ノズル以外のものを使用することもできる。For example, as a means for holding a semiconductor element to be face-down bonded, it is also possible to use something other than the vacuum suction nozzle in the above embodiment.

［利用分野］ 以上の説明では主として本発明者によってなされた発明
をその背景となった利用分野である半導体素子の基板へ
のフェイスダウンボンディングに適用した場合について
説明したが、それに限定されるものではな（、たとえば
、１つの半導体素子を他の半導体素子の上にフェイスダ
ウンボンディングする場合等にも広く適用できる。[Field of Application] In the above explanation, the invention made by the present inventor was mainly applied to the field of application which is the background thereof, which is face-down bonding of a semiconductor element to a substrate, but the present invention is not limited thereto. (For example, it can be widely applied to cases where one semiconductor element is face-down bonded to another semiconductor element.)

【図面の簡単な説明】[Brief explanation of the drawing]

第１図は本発明の一実施例であるフェイスダウンボンダ
ーを示す概略的部分説明図、 第２図は半導体素子の基板接合状態を示す拡大部分断面
図、 第３図は本発明の他の実施例の一つであるフェイスダウ
ンボンダーの概略的部分説明図である。FIG. 1 is a schematic partial explanatory diagram showing a face-down bonder that is an embodiment of the present invention, FIG. 2 is an enlarged partial cross-sectional view showing a state in which a semiconductor element is bonded to a substrate, and FIG. 3 is another embodiment of the present invention. FIG. 2 is a schematic partial explanatory diagram of a face-down bonder, which is one example.

Claims (1)

【特許請求の範囲】 １、フェイスダウンボンディング用のバンプを有する半
導体素子を基板上に実装するフェイスダウンボンダーに
おいて、半導体素子に超音波振動を与えて基板に接合す
ることを特徴とするフェイスダウンボンダー。 ２、半導体素子への超音波振動は、発振子を設けたホー
ンの先端に取り付けられた真空吸着ノズルを介して与え
られることを特徴とする特許請求の範囲第１項記載のフ
ェイスダウンボンダー。[Claims] 1. A face-down bonder for mounting a semiconductor element having bumps for face-down bonding on a substrate, characterized in that the semiconductor element is bonded to the substrate by applying ultrasonic vibrations to the semiconductor element. . 2. The face-down bonder according to claim 1, wherein the ultrasonic vibrations to the semiconductor element are applied through a vacuum suction nozzle attached to the tip of a horn provided with an oscillator.
JP8265283A 1983-05-13 1983-05-13 Face-down bonder Pending JPS59208844A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8265283A JPS59208844A (en) 1983-05-13 1983-05-13 Face-down bonder

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8265283A JPS59208844A (en) 1983-05-13 1983-05-13 Face-down bonder

Publications (1)

Publication Number Publication Date
JPS59208844A true JPS59208844A (en) 1984-11-27

Family

ID=13780357

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8265283A Pending JPS59208844A (en) 1983-05-13 1983-05-13 Face-down bonder

Country Status (1)

Country Link
JP (1) JPS59208844A (en)

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1011127A2 (en) * 1998-12-14 2000-06-21 TDK Corporation Chip junction nozzle
WO2001024963A1 (en) * 1999-10-04 2001-04-12 Matsushita Electric Industrial Co., Ltd. Method and device for frictional connection, and holding tool used for the frictional connection device
JP2002329751A (en) * 2002-04-30 2002-11-15 Matsushita Electric Ind Co Ltd Bonding tool for electronic parts
JP2002329750A (en) * 2002-04-30 2002-11-15 Matsushita Electric Ind Co Ltd Bonding tool for electronic parts
US6762537B1 (en) 1998-12-02 2004-07-13 Seiko Epson Corporation Piezoelectric device and method for manufacture thereof
US6885522B1 (en) 1999-05-28 2005-04-26 Fujitsu Limited Head assembly having integrated circuit chip covered by layer which prevents foreign particle generation
EP1394839A3 (en) * 2002-08-29 2005-08-17 Murata Manufacturing Co., Ltd. Ultrasonic bonding method and device
US7394163B2 (en) 2000-04-25 2008-07-01 Fujitsu Limited Method of mounting semiconductor chip

Cited By (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6762537B1 (en) 1998-12-02 2004-07-13 Seiko Epson Corporation Piezoelectric device and method for manufacture thereof
US6189760B1 (en) 1998-12-14 2001-02-20 Tdk Corporation Chip junction nozzle
EP1011127A2 (en) * 1998-12-14 2000-06-21 TDK Corporation Chip junction nozzle
EP1011127A3 (en) * 1998-12-14 2001-08-22 TDK Corporation Chip junction nozzle
US6382495B2 (en) 1998-12-14 2002-05-07 Tdk Corporation Chip junction nozzle
US6885522B1 (en) 1999-05-28 2005-04-26 Fujitsu Limited Head assembly having integrated circuit chip covered by layer which prevents foreign particle generation
US7347347B2 (en) 1999-05-28 2008-03-25 Fujitsu Limited Head assembly, disk unit, and bonding method and apparatus
US6706130B1 (en) 1999-10-04 2004-03-16 Matsushita Electric Industrial Co., Ltd. Method and device for frictional connection and holding tool used for the frictional connection device
WO2001024963A1 (en) * 1999-10-04 2001-04-12 Matsushita Electric Industrial Co., Ltd. Method and device for frictional connection, and holding tool used for the frictional connection device
US7394163B2 (en) 2000-04-25 2008-07-01 Fujitsu Limited Method of mounting semiconductor chip
JP2002329750A (en) * 2002-04-30 2002-11-15 Matsushita Electric Ind Co Ltd Bonding tool for electronic parts
JP2002329751A (en) * 2002-04-30 2002-11-15 Matsushita Electric Ind Co Ltd Bonding tool for electronic parts
EP1394839A3 (en) * 2002-08-29 2005-08-17 Murata Manufacturing Co., Ltd. Ultrasonic bonding method and device
US7017791B2 (en) 2002-08-29 2006-03-28 Murata Manufacturing Co., Ltd. Ultrasonic bonding method and device

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