JP2565009B2 - Wire bonding method - Google Patents

Wire bonding method

Info

Publication number
JP2565009B2
JP2565009B2 JP7134391A JP7134391A JP2565009B2 JP 2565009 B2 JP2565009 B2 JP 2565009B2 JP 7134391 A JP7134391 A JP 7134391A JP 7134391 A JP7134391 A JP 7134391A JP 2565009 B2 JP2565009 B2 JP 2565009B2
Authority
JP
Japan
Prior art keywords
wire
bonding
inner lead
bonding method
amplitude
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP7134391A
Other languages
Japanese (ja)
Other versions
JPH04307748A (en
Inventor
敦 高橋
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Electric Co Ltd filed Critical Nippon Electric Co Ltd
Priority to JP7134391A priority Critical patent/JP2565009B2/en
Publication of JPH04307748A publication Critical patent/JPH04307748A/en
Application granted granted Critical
Publication of JP2565009B2 publication Critical patent/JP2565009B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies
    • H01L24/78—Apparatus for connecting with wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554—External layer
    • H01L2224/0555—Shape
    • H01L2224/05552—Shape in top view
    • H01L2224/05554—Shape in top view being square
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491—Disposition
    • H01L2224/4912—Layout
    • H01L2224/49171—Fan-out arrangements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491—Disposition
    • H01L2224/4912—Layout
    • H01L2224/49171—Fan-out arrangements
    • H01L2224/49173—Radial fan-out arrangements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/78—Apparatus for connecting with wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/78—Apparatus for connecting with wire connectors
    • H01L2224/7825—Means for applying energy, e.g. heating means
    • H01L2224/783—Means for applying energy, e.g. heating means by means of pressure
    • H01L2224/78301—Capillary
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/78—Apparatus for connecting with wire connectors
    • H01L2224/788—Means for moving parts
    • H01L2224/78801—Lower part of the bonding apparatus, e.g. XY table
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/8512—Aligning
    • H01L2224/85148—Aligning involving movement of a part of the bonding apparatus
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/852—Applying energy for connecting
    • H01L2224/85201—Compression bonding
    • H01L2224/85205—Ultrasonic bonding
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01039—Yttrium [Y]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01082—Lead [Pb]

Description

【発明の詳細な説明】Detailed Description of the Invention

【０００１】[0001]

【産業上の利用分野】本発明は半導体装置の製造方法に
おいて、熱と超音波振動を併用して行うワイヤボンディ
ング方法に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a wire bonding method in which heat and ultrasonic vibration are used in combination in a semiconductor device manufacturing method.

【０００２】[0002]

【従来の技術】従来、半導体装置の組立工程において、
図５の部分平面図に示すように、半導体素子８上のボン
ディングパッド１１と内部リード２とをワイヤ１により
接続しているが、この接続には熱と超音波とを併用して
行う方法が広く用いられている。このとき超音波は、図
４のボンディング装置の構成図に示すように、キャピラ
リー３にボンディングアーム５を介して作用させるが、
超音波の振動方向１０は、図のようにボンディングアー
ムの延びている方向と同一方向である。そして、内部リ
ード２にワイヤを接続するときは、キャピラリー３にボ
ンディングアーム５を介して加重を１００〜１５０ｇ加
え、ボンディングステージ上の温度は２００〜２５０℃
に設定し、超音波を１０〜３０ｍｓｅｃ程度発振させて
図５のようにワイヤ１と内部リード２とを接着固定して
いる。2. Description of the Related Art Conventionally, in the process of assembling a semiconductor device,
As shown in the partial plan view of FIG. 5, the bonding pad 11 on the semiconductor element 8 and the internal lead 2 are connected by the wire 1. However, this connection is performed by using heat and ultrasonic waves together. Widely used. At this time, the ultrasonic wave acts on the capillary 3 via the bonding arm 5 as shown in the configuration diagram of the bonding apparatus in FIG.
The ultrasonic vibration direction 10 is the same direction as the direction in which the bonding arm extends, as shown in the figure. When connecting the wire to the inner lead 2, a weight of 100 to 150 g is applied to the capillary 3 via the bonding arm 5, and the temperature on the bonding stage is 200 to 250 ° C.
The ultrasonic wave is oscillated for about 10 to 30 msec, and the wire 1 and the inner lead 2 are bonded and fixed as shown in FIG.

【０００３】[0003]

【発明が解決しようとする課題】超音波方式を用いるワ
イヤボンディング方法は、超音波の振動方向が一方向で
あり、超音波の強度を強くすると、図５のように、ワイ
ヤ１をボンディングパッド１１から内部リード２へと結
線する方向が超音波の発振方向１０と異なるとき、すな
わちワイヤ変形を起こし易い部分９のボンディングパッ
ドから内部リード２へ向かうときに、ワイヤにワイヤ変
形が発生する。In the wire bonding method using the ultrasonic method, the vibration direction of the ultrasonic wave is one direction. When the strength of the ultrasonic wave is increased, the wire 1 is bonded to the bonding pad 11 as shown in FIG. Wire deformation occurs in the wire when the direction of connection from the to the internal lead 2 is different from the oscillation direction 10 of the ultrasonic wave, that is, when the bonding pad of the portion 9 where the wire deformation easily occurs goes to the internal lead 2.

【０００４】これは、超音波により内部リードが振動す
るためであり、リードが細くなってリードの強度が弱く
なるほど発生しやすくなる。例えば、内部リードの厚さ
が１５０μｍでリード幅が８０μｍ、ワイヤに径３０μ
ｍの金線を使用し、ボンディング方向と超音波の振動方
向とが約３０度以上異なるとき、ワイヤ変形を発生させ
ない最大ワイヤ長は３．５ｍｍ程度である。This is because the internal leads vibrate due to ultrasonic waves, and the thinner the leads and the weaker the strength of the leads, the more likely they are to occur. For example, the inner lead has a thickness of 150 μm, the lead width is 80 μm, and the wire has a diameter of 30 μm.
When using a gold wire of m and the bonding direction and the vibration direction of ultrasonic waves differ by about 30 degrees or more, the maximum wire length that does not cause wire deformation is about 3.5 mm.

【０００５】[0005]

【課題を解決するための手段】本発明はワイヤボンディ
ング方法は、内部リードに超音波を作用させてワイヤを
ボンディングするとき、キャピラリーの先端のワイヤが
内部リードに接触した直後にボンディングヘッドをワイ
ヤの結線方向に振動させ、ボンディングヘッドの振動が
キャピラリー先端に伝わるようにしている。According to the wire bonding method of the present invention, when a wire is bonded by applying ultrasonic waves to the inner lead, the bonding head is moved to the wire immediately after the wire at the tip of the capillary comes into contact with the inner lead. The vibration of the bonding head is transmitted to the tip of the capillary by vibrating in the connecting direction.

【０００６】[0006]

【実施例】次に本発明を図面を参照して説明する。図１
は本発明の第１実施例の内部リードにワイヤーが接触し
ているときのＸＹステージの振幅を説明する図で、同図
（ａ）はタイミングを示す図、同図（ｂ）はその振幅状
態を説明する図である。また、図３はワイヤが内部リー
ドに接触したときの状態を示す部分断面図である。図３
に示すように、キャピラリー３を用いて内部リード２に
ワイヤ１をボンディングする際、図４におけるボンディ
ングヘッド６は、ＸＹステージを動かすことにより振動
し、このボンディングヘッド６の振動はボンディングア
ーム５を介してキャピラリー３に伝わり、この振動がワ
イヤと内部リードの接合部４に伝わるようにしている。The present invention will be described below with reference to the drawings. FIG.
6A and 6B are diagrams for explaining the amplitude of the XY stage when the wire is in contact with the internal lead according to the first embodiment of the present invention. FIG. 7A is a timing diagram, and FIG. It is a figure explaining. Further, FIG. 3 is a partial cross-sectional view showing a state in which the wire comes into contact with the inner lead. FIG.
As shown in FIG. 4, when the wire 1 is bonded to the inner lead 2 using the capillary 3, the bonding head 6 in FIG. 4 vibrates by moving the XY stage, and the vibration of the bonding head 6 passes through the bonding arm 5. Is transmitted to the capillary 3 and this vibration is transmitted to the joint portion 4 between the wire and the inner lead.

【０００７】図１（ａ），（ｂ）に示すように、本実施
例ではワイヤが内部リードに接触した直後にＸＹステー
ジ７をワイヤの結線方向に振動させ、その後超音波を発
振させる。ＸＹテーブルの振幅は、振幅量２〜８μｍ
で、振幅回数は１〜３回とする。このＸＹテーブルの振
幅により、超音波の強度をＸＹテーブルの振幅を行なわ
なかったときと比べて約１／２〜１／４程度としても、
ワイヤと内部リードとの密着強度は従来例と同レベルに
得られる。As shown in FIGS. 1 (a) and 1 (b), in this embodiment, the XY stage 7 is vibrated in the wire connecting direction immediately after the wire comes into contact with the inner lead, and then ultrasonic waves are oscillated. The amplitude of the XY table is 2 to 8 μm.
Therefore, the number of times of amplitude is 1 to 3 times. According to the amplitude of the XY table, even if the intensity of the ultrasonic wave is set to about 1/2 to 1/4 as compared with the case where the amplitude of the XY table is not performed,
The adhesion strength between the wire and the inner lead can be obtained at the same level as the conventional example.

【０００８】さらにワイヤ変形を発生させないようにす
るために、従来の方向では径３０μｍの金線でリード厚
さ１５０μｍ，リード幅が８０μｍのとき、ワイヤ長
３．５ｍｍが限界であったが、本実施例では、５．０ｍ
ｍまでワイヤ変形のないボンディングが可能となり、ま
た、ワイヤ変形がないことから、半導体素子上のパッド
間隔やリード間隔を縮めてもワイヤ同士が接触する恐れ
がないため、半導体素子の設計の自由度が増し設計しや
すくなる。Further, in order to prevent wire deformation, in the conventional direction, when the lead thickness is 150 μm and the lead width is 80 μm with a gold wire having a diameter of 30 μm, the wire length is 3.5 mm. In the example, 5.0 m
Bonding without wire deformation up to m is possible, and since there is no wire deformation, there is no risk of wires coming into contact with each other even if the pad spacing or lead spacing on the semiconductor element is shortened. And the design becomes easier.

【０００９】また、図２は本発明の第２の実施例を説明
する図で、ボンディングヘッドの振幅方向とワイヤの結
線方向の領域との関係を示しており、図のようにワイヤ
の結線方向がＡの領域のときボンディングヘッドの振幅
方向はイ，Ｂのときはロ，Ｃのときはハ，Ｄのときはニ
とすることにより、ＸＹテーブルの振幅方向を単純化し
ている。このようにしても、ワイヤの結線方向とボンデ
ィングヘッドの振幅方向とでなす角は最大約２３度のた
め、ワイヤーの変形は発生しない。FIG. 2 is a diagram for explaining the second embodiment of the present invention, showing the relationship between the amplitude direction of the bonding head and the region in the wire connecting direction. As shown in FIG. In the region of A, the amplitude direction of the bonding head is a, the case of B is b, the case of c is c, and the case of d is d, so that the amplitude direction of the XY table is simplified. Even in this case, since the angle formed by the wire connection direction and the amplitude direction of the bonding head is about 23 degrees at the maximum, the wire is not deformed.

【００１０】また、第２の実施例では、ワイヤの結線方
向によって、ＸＹテーブルをＸ方向，Ｙ方向またはＸＹ
同時に動作させれば良いので、ワイヤボンディング装置
の制御がしやすくなる。In the second embodiment, the XY table is moved in the X direction, the Y direction or the XY table depending on the wire connecting direction.
Since it suffices to operate them at the same time, it becomes easy to control the wire bonding apparatus.

【００１１】[0011]

【発明の効果】以上説明したように本発明は、キャピラ
リーの先端のワイヤが、内部リードに接触した直後にボ
ンディングヘッドをワイヤーの結線方向に振動させるこ
とにより、超音波の発振強度をボンディングヘッドの振
動がないときに比べ１／２〜１／４以下としても、超音
波のみのときと同レベルのワイヤと内部リードとの密着
強度が得られるため、超音波の発振強度を小さくでき、
ワイヤの結線方向が超音波の発振方向と違っていてもワ
イヤの変形を発生させないようにすることができる。ま
たＸＹステージの振動は、超音波の発振に比べ安定して
いるので、ワイヤと内部リードとの密着が安定して、こ
の部分でのワイヤと内部リードとの剥れを少なくするこ
とができる。As described above, the present invention vibrates the bonding head in the wire connecting direction immediately after the wire at the tip of the capillary comes into contact with the internal lead, so that the ultrasonic oscillation intensity of the bonding head is increased. Even if it is set to 1/2 to 1/4 or less as compared with the case where there is no vibration, the same level of adhesion strength between the wire and the inner lead as that obtained only with ultrasonic waves can be obtained, so the ultrasonic wave oscillation strength can be reduced,
Even if the wire connecting direction is different from the ultrasonic wave oscillating direction, it is possible to prevent the wire from being deformed. Further, since the vibration of the XY stage is more stable than the oscillation of ultrasonic waves, the adhesion between the wire and the inner lead is stable, and the peeling of the wire and the inner lead at this portion can be reduced.

【図面の簡単な説明】[Brief description of drawings]

【図１】本発明の第１の実施例のＸＹステージの振幅を
説明する図で、同図（ａ）はタイミング図，同図（ｂ）
はＸＹステージの振幅状態の説明図である。FIG. 1 is a diagram for explaining the amplitude of an XY stage according to a first embodiment of the present invention, in which FIG. 1 (a) is a timing diagram and FIG. 1 (b).
FIG. 6 is an explanatory diagram of an amplitude state of the XY stage.

【図２】本発明の第２の実施例のワイヤの結線方向とボ
ンディングヘッドの振幅方向との関係を示す説明図であ
る。FIG. 2 is an explanatory diagram showing a relationship between a wire connecting direction and a bonding head amplitude direction according to a second embodiment of the present invention.

【図３】ワイヤが内部リードに接触したときの状態を示
す部分断面図である。FIG. 3 is a partial cross-sectional view showing a state when a wire contacts an inner lead.

【図４】ワイヤボンディング装置の構成図である。FIG. 4 is a configuration diagram of a wire bonding device.

【図５】従来のワイヤボンディング方法を説明するため
の半導体装置の部分平面図である。FIG. 5 is a partial plan view of a semiconductor device for explaining a conventional wire bonding method.

【符号の説明】[Explanation of symbols]

１ ワイヤ ２ 内部リード ３ キャピラリ ４ ワイヤと内部リードとの接合部 ５ ボンディングアーム ６ ボンディングヘッド ７ ＸＹテーブル ８ 半導体素子 ９ ワイヤ変形を起こし易い部分 １０ 超音波の発振方向 １１ ボンディングパッド 1 Wire 2 Inner Lead 3 Capillary 4 Joint between Wire and Inner Lead 5 Bonding Arm 6 Bonding Head 7 XY Table 8 Semiconductor Element 9 Wire Deformable Area 10 Ultrasonic Oscillation Direction 11 Bonding Pad

Claims (1)

(57)【特許請求の範囲】(57) [Claims] 【請求項１】 半導体素子と内部リードとを超音波を作
用させてワイヤによって結線するワイヤボンディング方
法において、キャピラリーの先端のワイヤが内部リード
に接触した直後にＸＹステージを作動させてボンディン
グヘッドをワイヤの結線方向に振動させ、その後超音波
を発振させてボンディングヘッドを振動させることを特
徴とするワイヤボンディング方法。1. A wire bonding method in which a semiconductor element and an internal lead are connected by a wire by applying ultrasonic waves, and an XY stage is actuated immediately after a wire at the tip of a capillary comes into contact with the internal lead to bond. > Vibrate the head in the wire connection direction and then
A wire bonding method characterized by oscillating a wire to vibrate a bonding head .
JP7134391A 1991-04-04 1991-04-04 Wire bonding method Expired - Fee Related JP2565009B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP7134391A JP2565009B2 (en) 1991-04-04 1991-04-04 Wire bonding method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7134391A JP2565009B2 (en) 1991-04-04 1991-04-04 Wire bonding method

Publications (2)

Publication Number Publication Date
JPH04307748A JPH04307748A (en) 1992-10-29
JP2565009B2 true JP2565009B2 (en) 1996-12-18

Family

ID=13457759

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7134391A Expired - Fee Related JP2565009B2 (en) 1991-04-04 1991-04-04 Wire bonding method

Country Status (1)

Country Link
JP (1) JP2565009B2 (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH09199549A (en) * 1996-01-22 1997-07-31 Denso Corp Wire bonding method

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6484727A (en) * 1987-09-28 1989-03-30 Nec Corp Manufacture of semiconductor device
JPH02301146A (en) * 1989-05-16 1990-12-13 Hitachi Ltd Wire bonding method

Also Published As

Publication number Publication date
JPH04307748A (en) 1992-10-29

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