JPH08153758A - Device and method for ultrasonic wire bonding - Google Patents
Device and method for ultrasonic wire bondingInfo
- Publication number
- JPH08153758A JPH08153758A JP29284894A JP29284894A JPH08153758A JP H08153758 A JPH08153758 A JP H08153758A JP 29284894 A JP29284894 A JP 29284894A JP 29284894 A JP29284894 A JP 29284894A JP H08153758 A JPH08153758 A JP H08153758A
- Authority
- JP
- Japan
- Prior art keywords
- bonding
- wire
- horn
- ultrasonic
- vibrator
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies
- H01L24/78—Apparatus for connecting with wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
- H01L2224/4847—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
- H01L2224/78—Apparatus for connecting with wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
- H01L2224/78—Apparatus for connecting with wire connectors
- H01L2224/7825—Means for applying energy, e.g. heating means
- H01L2224/783—Means for applying energy, e.g. heating means by means of pressure
- H01L2224/78313—Wedge
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
- H01L2224/852—Applying energy for connecting
- H01L2224/85201—Compression bonding
- H01L2224/85205—Ultrasonic bonding
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01082—Lead [Pb]
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Wire Bonding (AREA)
Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明は、半導体チップ上の電極
とリードとを超音波エネルギを用いてＡｌワイヤで接合
する超音波ワイヤボンディング装置及び方法に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an ultrasonic wire bonding apparatus and method for bonding electrodes and leads on a semiconductor chip with Al wires using ultrasonic energy.
【０００２】[0002]
【従来の技術】従来の超音波ワイヤボンディング装置と
しては、例えば特開平５−２３５１１６号公報がある。
図２にその構造を示す。ホーン１の先端にウェッギ３が
取り付けられており、ホーン１の後部にホーン取付部７
が取り付けられている。ホーン取付部７には超音波振動
子２が取り付けられている。この超音波振動子２に出力
トランス８から所定の高周波電力が印加されると一定の
周波数で振動が発生し、ホーン１を介してウェッジ３を
微小振動させ、ウェッジ３の先端でＡｌワイヤ（図示
略）を加圧振動させる。2. Description of the Related Art As a conventional ultrasonic wire bonding apparatus, there is, for example, JP-A-5-235116.
The structure is shown in FIG. A weggie 3 is attached to the tip of the horn 1, and a horn attachment portion 7 is attached to the rear of the horn 1.
Is attached. The ultrasonic vibrator 2 is mounted on the horn mounting portion 7. When a predetermined high frequency power is applied to the ultrasonic oscillator 2 from the output transformer 8, vibration is generated at a constant frequency, the wedge 3 is slightly vibrated via the horn 1, and the Al wire (shown in the figure) is attached at the tip of the wedge 3. (Omitted) is vibrated under pressure.
【０００３】この加圧振動により、ワイヤとこのワイヤ
が当接する電極パッドまたはリードとの境界面の酸化膜
が破壊され、真相金属面接触が生じ、すべりによる摩擦
熱で金属拡散を促進し、これらの強固な接合が得られ
る。このとき、ワイヤに加わるせん断力によりワイヤは
塑性変形する。通常、Ａｌワイヤとして、直径２５〜４
０μｍの１％Ｓｉ−Ａｌワイヤが用いられ、超音波周波
数としては６０〜６５〔ＫＨZ 〕の超音波が用いられて
おり、ワイヤの変形は、ワイヤ径の１．７〜２．０倍
（直径３０μｍの場合、５０〜６０μｍ）になる。ワイ
ヤと電極パッドおよびワイヤとリードは同一周波数の超
音波でワイヤボンディングしている。Due to this pressure vibration, the oxide film at the interface between the wire and the electrode pad or lead with which the wire abuts is destroyed, and true-phase metal surface contact occurs, and metal friction is promoted by frictional heat due to slippage. A strong joint can be obtained. At this time, the wire is plastically deformed by the shearing force applied to the wire. Usually, the diameter is 25 to 4 as Al wire.
1% Si-Al wire 0μm is used, have been used ultrasound 60-65 [KH Z] is a ultrasonic frequency, wire deformation, 1.7 to 2.0 times the wire diameter ( In the case of a diameter of 30 μm, it becomes 50 to 60 μm). The wire and the electrode pad and the wire and the lead are wire-bonded by ultrasonic waves of the same frequency.
【０００４】近年、半導体チップの高機能化、高集積化
の進展に伴い、半導体チップ上の電極パッドの小型化、
狭ピッチ化が進み、ワイヤ変形が小さく、かつ、接合強
度の高いワイヤボンディング技術が必要になってきた。
この問題に対する解決策として、超音波の高周波化があ
る。電子通信学会技報ＩＣＤ９２−１２８（１９９２年
１２月）に１２０〔ＫＨZ 〕の超音波によるワイヤボン
ディングについて示されている。この文献によると、高
周波化により超音波エネルギの伝達効率がよくなり、ワ
イヤ変形量が少なくても良好な接合が得られることが示
されている。１２０〔ＫＨZ 〕の場合、変形量１．３以
上で十分な強度が得られる。[0004] In recent years, with the advancement of high functionality and high integration of semiconductor chips, downsizing of electrode pads on the semiconductor chips,
As the pitch has been narrowed, a wire bonding technique which has a small wire deformation and a high bonding strength has been required.
As a solution to this problem, there is an increase in the frequency of ultrasonic waves. Are shown for wire bonding using ultrasonic waves 120 in Electronics and Communication Engineers Technical Report ICD92-128 (12 May 1992) [KH Z]. According to this document, it has been shown that the transmission efficiency of ultrasonic energy is improved by increasing the frequency, and good bonding can be obtained even with a small amount of wire deformation. In the case of 120 [KH Z ], a sufficient strength can be obtained with a deformation amount of 1.3 or more.
【０００５】[0005]
【発明が解決しようとする課題】しかしながら、従来の
超音波ワイヤボンディング装置を用いて、高周波で超音
波ワイヤボンディングを行うと以下のような問題があ
る。However, when ultrasonic wire bonding is performed at a high frequency using a conventional ultrasonic wire bonding apparatus, there are the following problems.
【０００６】第一の問題点は、調整作業工数が増大する
点である。６０〔ＫＨZ 〕の低周波においては、超音波
パワー、ボンディング荷重、超音波発振時間等のボンデ
ィング条件の適用範囲が広いため、調整が容易である。
しかし、高周波化により、超音波エネルギの伝達効率が
向上する反面、ボンディング条件範囲が極めて狭くなる
ため、調整作業が困難になり、調整作業工数が大幅に増
大する。また、接合面の状態の影響を受け易くなるた
め、電極側、リード側の条件出しを、各々、行う必要が
あり、さらに、工数増になる。The first problem is that the man-hours for adjustment work increase. At a low frequency of 60 KHz, adjustment is easy because the applicable range of bonding conditions such as ultrasonic power, bonding load, and ultrasonic oscillation time is wide.
However, as the frequency becomes higher, the transmission efficiency of ultrasonic energy is improved, but on the other hand, the bonding condition range becomes extremely narrow, so that the adjustment work becomes difficult and the number of adjustment work steps increases significantly. In addition, since it is easily affected by the state of the bonding surface, it is necessary to determine the conditions on the electrode side and the lead side, respectively, which further increases the number of steps.
【０００７】第二の問題点は、製品の品質のばらつきの
状態によっては、狭いボンディング条件内ではワイヤボ
ンディングできない場合が生じ、不良率が増加する点で
ある。The second problem is that depending on the state of variation in product quality, wire bonding may not be possible under narrow bonding conditions, increasing the defect rate.
【０００８】[0008]
【課題を解決するための手段】本発明の超音波ワイヤボ
ンディング装置は、先端部にウェッジを設けたホーン
と、このホーンの後部に設けられた互いに発振周波数の
異なる第一振動子及び第二振動子と、前記ホーンを支持
するホルダとを備え、ホーンの後部は内側の軸端部を外
輪が囲んだ二重リング構造をなし、前記内側の軸端部に
第一振動子を取り付け、前記外輪に第二振動子を取り付
けた構造とすることができる。SUMMARY OF THE INVENTION An ultrasonic wire bonding apparatus of the present invention comprises a horn having a wedge at its tip and a first oscillator and a second oscillator provided at the rear of the horn and having different oscillation frequencies. And a holder for supporting the horn, the rear part of the horn has a double ring structure in which an outer ring surrounds an inner shaft end, and a first vibrator is attached to the inner shaft end to form the outer ring. The second vibrator may be attached to the structure.
【０００９】本発明の超音波ワイヤボンディング方法
は、半導体チップ上の電極パッドヘワイヤをボンディン
グする第一ボンディングと、リードへワイヤをボンディ
ングする第二ボンディングとを異なる周波数の超音波を
用いて行うことを特徴とし、第一ボンディングは１２０
〔ＫＨZ 〕の高い周波数の超音波を用い、第二ボンディ
ングは６０〔ＫＨZ 〕の周波数の超音波を用いるように
できる。The ultrasonic wire bonding method of the present invention is characterized in that the first bonding for bonding the wires to the electrode pads on the semiconductor chip and the second bonding for bonding the wires to the leads are carried out using ultrasonic waves of different frequencies. And the first bonding is 120
Using ultrasound frequency high [KH Z], the second bonding can be to use the ultrasonic frequency of 60 [KH Z].
【００１０】[0010]
【実施例】次に、本発明について図面を参照して説明す
る。Next, the present invention will be described with reference to the drawings.
【００１１】図１は本発明の一実施例の超音波ワイヤボ
ンディング装置の側面図である。ホーン１の後部に第一
振動子２ａと第二振動子２ｂを設ける。ホーン１の後部
は内側の軸端部を外輪が囲んだ二重リング構造をなして
おり、内輪側の軸端部に第一振動子２ａを、外輪に第二
振動子２ｂを取り付ける。ホーン１の先端には、ウェッ
ジ３を取り付ける。ホーン１は、ホルダ４を介して、支
点５に取り付ける。図には細かな構造を省略してある
が、ホルダ４とホーン１との間には緩衝用のプラスチッ
ク部材が設けられている。Ａｌワイヤ６はホーン１に設
けた穴とウェッジ３に設けた穴を通っている。第一振動
子２ａと第二振動子２ｂは、各々、異なる周波数で超音
波発振を行い、ウェッジ３の先端がπ／２または３π／
２の定在波となるようにウェッジ３までの距離を設定し
てある。本実施例では、第一振動子２ａの発振周波数を
１２０〔ＫＨZ 〕、第二振動子２ｂの発振周波数を６０
〔ＫＨZ 〕とした。FIG. 1 is a side view of an ultrasonic wire bonding apparatus according to one embodiment of the present invention. A first vibrator 2a and a second vibrator 2b are provided at the rear of the horn 1. The rear part of the horn 1 has a double ring structure in which the inner shaft end is surrounded by an outer ring, and the first vibrator 2a is mounted on the inner ring side shaft end, and the second vibrator 2b is mounted on the outer ring. A wedge 3 is attached to the tip of the horn 1. The horn 1 is attached to a fulcrum 5 via a holder 4. Although a detailed structure is omitted in the figure, a buffering plastic member is provided between the holder 4 and the horn 1. The Al wire 6 passes through a hole provided in the horn 1 and a hole provided in the wedge 3. The first vibrator 2a and the second vibrator 2b respectively oscillate ultrasonic waves at different frequencies, and the tip of the wedge 3 has a π / 2 or 3π /
The distance to the wedge 3 is set so as to be the standing wave 2. In this embodiment, the oscillation frequency of the first vibrator 2a 120 [KH Z], the oscillation frequency of the second transducer 2b 60
[KH Z ].
【００１２】次に、本実施例の超音波ワイヤボンディン
グ装置を用いたワイヤボンディング方法について説明す
る。まず、ウェッジ３を半導体チップ上に移動させ、ウ
ェッジ３に所定のボンディング荷重が発生する状態でウ
ェッジ３を先端のＡｌワイヤ６が半導体チップの電極パ
ッドに接触するまで下げる。Ａｌワイヤ６が電極パッド
に接触したら第一振動子２ａを１２０〔ＫＨZ 〕で発振
させ、ウェッジ３でＡｌワイヤ６を加圧振動し、第一ボ
ンディングを行う。次に、ウェッジ３を上昇させ、Ａｌ
ワイヤ６をリード上のボンディング位置まで引き回し、
ウェッジ３を先端のＡｌワイヤ６がリード面に接触する
まで下げ、第二振動子２ｂを６０〔ＫＨZ 〕で発振さ
せ、ウェッジ３でＡｌワイヤ６を加圧振動し、第二ボン
ディングを行う。Next, a wire bonding method using the ultrasonic wire bonding apparatus of the present embodiment will be described. First, the wedge 3 is moved onto the semiconductor chip, and the wedge 3 is lowered under the condition that a predetermined bonding load is generated on the wedge 3 until the Al wire 6 at the tip contacts the electrode pad of the semiconductor chip. When the Al wire 6 comes into contact with the electrode pad, the first vibrator 2a is oscillated at 120 [KH Z ], and the wedge 3 presses and vibrates the Al wire 6 to perform first bonding. Next, the wedge 3 is raised, and Al
Route the wire 6 to the bonding position on the lead,
Lower the wedge 3 to the Al wire 6 of the tip comes into contact with the leading surface, the second transducer 2b to oscillate at 60 [KH Z], the pressure vibration of Al wire 6 in the wedge 3, performs second bonding.
【００１３】なお、ホーン１の後部を二重リング構造に
する代わりに他の構造、例えば、２本の軸端部に枝分か
れさせ、１本の軸端部に第一振動子２ａを取り付け、他
の軸端部に第二振動子２ｂを取り付けるようにしてもよ
い。In addition, instead of the rear part of the horn 1 having a double ring structure, another structure, for example, branching to two shaft ends, attaching the first vibrator 2a to one shaft end, and The second vibrator 2b may be attached to the end of the shaft.
【００１４】[0014]
【発明の効果】本発明においては、半導体チップ上の電
極パッド側の第一ボンディングを例えば１２０〔ＫＨZ
〕の高い周波数で行い、リード側の第二ボンディング
を例えば６０〔ＫＨZ 〕で行っているため、両者とも高
い周波数でボンディングする場合に比べ、第二ボンディ
ングの調整作業が容易になり、コストが低減できると共
に、第二ボンディングの不良発生率を低減できるという
効果がある。しかも、半導体チップ上の電極パッドへの
ボンディングでは、ワイヤ変形を小さくでき、狭ピッチ
ボンディングが可能となる。According to the present invention, the first bonding on the electrode pad side on the semiconductor chip is performed, for example, at 120 KHz.
], And the second bonding on the lead side is performed at, for example, 60 KHz. Therefore, the adjustment work of the second bonding becomes easier and the cost is reduced as compared with the case where both are bonded at a high frequency. In addition to this, there is an effect that the rate of occurrence of defects in the second bonding can be reduced. Moreover, in bonding to the electrode pads on the semiconductor chip, wire deformation can be reduced, and narrow pitch bonding can be performed.
【図１】本発明の一実施例の超音波ワイヤボンディング
装置の側面図である。FIG. 1 is a side view of an ultrasonic wire bonding apparatus according to an embodiment of the present invention.
【図２】従来の超音波ワイヤボディング装置の構成図で
ある。FIG. 2 is a configuration diagram of a conventional ultrasonic wire bodging device.
１ ホーン ２ 超音波振動子 ２ａ 第一振動子 ２ｂ 第二振動子 ３ ウェッジ ４ ホルダ ５ 支点 ６ Ａｌワイヤ ７ ホーン取付部 Reference Signs List 1 horn 2 ultrasonic transducer 2a first transducer 2b second transducer 3 wedge 4 holder 5 fulcrum 6 Al wire 7 horn mounting part
Claims (4)
のホーンの後部に設けられた互いに発振周波数の異なる
第一振動子及び第二振動子と、前記ホーンを支持するホ
ルダとを含むことを特徴とする超音波ワイヤボンディン
グ装置。1. A horn having a wedge at its tip, a first oscillator and a second oscillator provided at the rear of the horn and having different oscillation frequencies, and a holder for supporting the horn. Characteristic ultrasonic wire bonding equipment.
ボンディングする第一ボンディングと、リードへワイヤ
をボンディングする第二ボンディングとを異なる周波数
の超音波を用いて行うことを特徴とする超音波ワイヤボ
ンディング方法。2. An ultrasonic wire bonding method, wherein the first bonding for bonding a wire to an electrode pad on a semiconductor chip and the second bonding for bonding a wire to a lead are carried out by using ultrasonic waves of different frequencies.
んだ二重リング構造をなし、前記内側の軸端部に第一振
動子を取り付け、前記外輪に第二振動子を取り付けた請
求項１記載の超音波ワイヤボンディング装置。3. The rear part of the horn has a double ring structure in which an outer ring surrounds an inner shaft end, a first oscillator is attached to the inner shaft end, and a second oscillator is attached to the outer ring. The ultrasonic wire bonding apparatus according to claim 1.
高い周波数の超音波を用い、第二ボンディングは６０
〔ＫＨZ 〕の周波数の超音波を用いる請求項２記載の超
音波ワイヤボンディング方法。4. The first bonding uses ultrasonic waves with a high frequency of 120 [KH Z ] and the second bonding uses 60.
The ultrasonic wire bonding method according to claim 2, wherein ultrasonic waves having a frequency of [KH Z ] are used.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6292848A JP2576428B2 (en) | 1994-11-28 | 1994-11-28 | Ultrasonic wire bonding equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6292848A JP2576428B2 (en) | 1994-11-28 | 1994-11-28 | Ultrasonic wire bonding equipment |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH08153758A true JPH08153758A (en) | 1996-06-11 |
| JP2576428B2 JP2576428B2 (en) | 1997-01-29 |
Family
ID=17787154
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP6292848A Expired - Lifetime JP2576428B2 (en) | 1994-11-28 | 1994-11-28 | Ultrasonic wire bonding equipment |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2576428B2 (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2007053130A (en) * | 2005-08-15 | 2007-03-01 | Matsushita Electric Ind Co Ltd | Connection structure and connection method |
| JP2007220822A (en) * | 2006-02-15 | 2007-08-30 | Matsushita Electric Ind Co Ltd | Connection structure and its fabrication process |
| US7523775B2 (en) | 2004-07-01 | 2009-04-28 | Fujitsu Limited | Bonding apparatus and method of bonding for a semiconductor chip |
| JP2020047876A (en) * | 2018-09-21 | 2020-03-26 | 超音波工業株式会社 | Wedge bonding device |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01184841A (en) * | 1988-01-13 | 1989-07-24 | Hitachi Ltd | Wire bonding equipment |
| JPH03124039A (en) * | 1989-10-06 | 1991-05-27 | Mitsubishi Electric Corp | Wire bonding |
| JPH0555311A (en) * | 1991-08-23 | 1993-03-05 | Matsushita Electric Ind Co Ltd | Bonding device |
| JPH0645411A (en) * | 1992-07-22 | 1994-02-18 | Rohm Co Ltd | Wire bonding method |
-
1994
- 1994-11-28 JP JP6292848A patent/JP2576428B2/en not_active Expired - Lifetime
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01184841A (en) * | 1988-01-13 | 1989-07-24 | Hitachi Ltd | Wire bonding equipment |
| JPH03124039A (en) * | 1989-10-06 | 1991-05-27 | Mitsubishi Electric Corp | Wire bonding |
| JPH0555311A (en) * | 1991-08-23 | 1993-03-05 | Matsushita Electric Ind Co Ltd | Bonding device |
| JPH0645411A (en) * | 1992-07-22 | 1994-02-18 | Rohm Co Ltd | Wire bonding method |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7523775B2 (en) | 2004-07-01 | 2009-04-28 | Fujitsu Limited | Bonding apparatus and method of bonding for a semiconductor chip |
| JP2007053130A (en) * | 2005-08-15 | 2007-03-01 | Matsushita Electric Ind Co Ltd | Connection structure and connection method |
| US8012869B2 (en) | 2005-08-15 | 2011-09-06 | Panasonic Corporation | Bonded structure and bonding method |
| JP2007220822A (en) * | 2006-02-15 | 2007-08-30 | Matsushita Electric Ind Co Ltd | Connection structure and its fabrication process |
| JP2020047876A (en) * | 2018-09-21 | 2020-03-26 | 超音波工業株式会社 | Wedge bonding device |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2576428B2 (en) | 1997-01-29 |
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