JP2002184810A - Bonding method and device and packaging board - Google Patents

Abstract

PROBLEM TO BE SOLVED: To obtain sufficient junction strength with a simple configuration, to maintain nearly the circular crimp bump shape, at the same time, to eliminate board dependency, and to reduce junction temperature. SOLUTION: A bonding stage 2 is heated to approximately normal temperature to 200 deg.C by a heater section 13. An electronic component 3 is heated to approximately 100 to 500 deg.C by the ceramic heater of a bonding tool 4. Immediately before the electronic component 3 is brought into contact with a specific connection position on a board 1, ultrasonic vibration is applied onto the board 1 by an ultrasonic oscillator 24 and an ultrasonic vibrator 24. At a site where the electronic component 3 heated to high temperature is brought into contact with the board 1, the ultrasonic vibration and heat are applied, an oxide film interposed between the junction sections is evenly removed, and both of them are firmly connected by diffusion due to heat.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

[0001] 1. Field of the Invention [0002] The present invention relates to a bonding method, a bonding apparatus, and a mounting substrate for flip-chip bonding electronic components such as semiconductor elements.

[0002]

2. Description of the Related Art Flip-chip bonding, in which electrodes of an electronic component and an electrode of a substrate are joined via bumps, has the features of a small mounting area and a short circuit wiring length. Suitable for implementation. In particular, those using gold ball bumps, whose formation process is relatively easy, have been widely put to practical use.

[0003] An outline of these processes will be described with reference to FIG. First, the gold bump 83 is formed on the electrode of the electronic component 81 in advance. The electronic component 81 on which the gold bump 83 is formed is sucked by a bonding tool attached to the ultrasonic horn with the bump forming surface facing down.

On the other hand, a ceramic substrate plated with gold for electrodes is placed on a bonding stage heated to about 200 ° C. After the electronic component 81 and the ceramic substrate are positioned by a camera or the like, the bonding tool descends and presses and joins the electronic component 81 while applying ultrasonic waves to the ceramic substrate.

[0005] Such a bonding step is usually performed in two stages. That is, the gold bump 83 as the first stage
And a step of ultrasonically bonding the gold bumps 83 to the electrodes of the ceramic substrate.

Therefore, first, ultrasonic vibration is applied at a low output of about 0.5 W for 800 msec, and then ultrasonic waves are applied at 2.0 W for 800 msec. At this time, since the bonding tools operate in the same state, the ultrasonic vibration is in the same direction (see arrow 84 in FIG. 7).

[0007]

Generally, in flip chip bonding in which thermocompression is performed together with ultrasonic waves,
In order to obtain a sufficient bonding strength, it is necessary to apply ultrasonic waves to the bumps at a high output for a long time as compared with wire bonding. As a result, not only does the production efficiency drop significantly, but also the gold bump 83 that was circular before bonding (see the dotted line in FIG. 7) becomes an elliptical shape in which the ultrasonic vibration direction 91 has a longer diameter after bonding. Deforms (see the solid line in FIG. 7).

In this case, since the electrodes on the ceramic substrate are square, the gold bumps 83 with respect to the size of the electrodes are provided.
Is determined by the major axis of the ellipse, which causes a problem that the appropriate range of the bonding condition is narrowed. For example, in the conventional method, while the short diameter is 90 μm, the long diameter reaches 120 μm, and it is difficult to apply the method to an electrode pad having one side of 120 μm.

As another connection method, for example,
In Japanese Patent Application Laid-Open No. 10-503059, there is a method of heating and connecting a semiconductor component and a substrate by pressure and heat. However, in this method, due to the difference in the coefficient of thermal expansion between the substrate and the semiconductor component, a shift occurs when the connected portion returns to normal temperature, and the joint is peeled off.

Further, for example, Japanese Patent Application Laid-Open No. H11-28402
8. In Japanese Patent Application Laid-Open No. Hei 7-115109, a method is considered in which ultrasonic oscillating portions are provided on the semiconductor component side and the substrate side, and bonding is performed by applying both heating and ultrasonic waves. However, in this method, since the ultrasonic horn and the heater section are provided above and below, the equipment becomes complicated and the purchase price increases. In addition, it is difficult to use the existing FC bonder, and new equipment development is required, resulting in high development costs. further,
When an ultrasonic horn and a heating function are provided on the head side, not only the head part becomes large and complicated, but also a design that considers the thermal expansion of the horn is required, and the horn needs to be replaced every time the set temperature is changed The man-hour for this is also a big problem.

Further, since the horn depends on the temperature, the limit of the bonding head portion is about 200 ° C. by constant heat. The reason for this is that ultrasonic transmitters usually
A piezoelectric element is used, but this part is vulnerable to heat, 50 ° C
Since the function does not function as described above, the temperature of 200 ° C. is attained by separating the transmitting section from the heater section. Naturally, in this case, the head becomes very large. When bonding is to be performed at a temperature of 200 ° C. or lower (however, the temperature of the bonding portion substantially rises only about 150 ° C. because heat escapes to the periphery), it is necessary to sufficiently apply ultrasonic waves to the bonding portion. It is necessary to firmly fix the substrate, and only the ceramic substrate can be used. Further, since bonding is performed mainly by ultrasonic waves, the bonding head is worn out every time bonding is performed, and the horn needs to be replaced every time 10,000 chips are bonded, which increases the cost and the number of steps.

As described above, when bonding is performed by applying ultrasonic waves and heating only to the bonding head, an appropriate range of bonding conditions is extremely restricted.
It is difficult to cope with the case where the electrode pad is miniaturized. Further, when ultrasonic waves are applied to the semiconductor component and the substrate at the same time, the cost of equipment and the workability are reduced, and in two cases, the problem is that the substrate type is limited to only ceramics. was there.

Therefore, the present invention has been made in view of the above circumstances, and can obtain a sufficient bonding strength with a simple configuration, and can keep the pressure bonding bump shape substantially circular.
Further, it is an object of the present invention to provide a bonding method, a bonding apparatus, and a mounting substrate that can eliminate the dependency on the substrate and can lower the bonding temperature.

[0014]

According to a first aspect of the present invention, there is provided a bonding method for connecting an electrode on an electronic component to an electrode on a substrate. And a crimping step of crimping an electrode on the electronic component and a bump formed on an electrode of the substrate while applying ultrasonic waves to the substrate.

In a preferred embodiment, in the bonding method according to the first aspect, the electronic component and the substrate may be heated in the pressing step.

According to a third aspect of the present invention, there is provided a bonding method for connecting an electrode on an electronic component to an electrode on a substrate, wherein a bump is formed on the electrode of the electronic component. The method includes a bump forming step and a pressure bonding step of pressing the bump formed on the electrode on the electronic component and the electrode on the substrate while applying ultrasonic waves to the substrate.

In a preferred aspect, in the bonding method according to the third aspect, the electronic component and the substrate may be heated in the pressing step.

According to another aspect of the present invention, there is provided a bonding apparatus for connecting an electrode on an electronic component and an electrode on a substrate, wherein the ultrasonic generator applies ultrasonic waves to the substrate. Means, and crimping means for crimping an electrode on the electronic component and a bump formed on an electrode on the substrate.

In a preferred aspect, the bonding apparatus according to the fifth aspect is configured such that the first heating means for heating the electronic component during the pressure bonding by the pressure bonding means; Second heating means for heating the substrate at the time of pressure bonding may be provided.

According to another aspect of the present invention, there is provided a bonding apparatus for connecting an electrode on an electronic component to an electrode on a substrate, wherein the ultrasonic generator applies ultrasonic waves to the substrate. Means, and crimping means for crimping a bump formed on an electrode on the electronic component and an electrode on the substrate.

In a preferred embodiment, the bonding apparatus according to the seventh aspect includes a first heating unit that heats the electronic component at the time of pressing by the pressing unit, Second heating means for heating the substrate at the time of pressure bonding may be provided.

According to a ninth aspect of the present invention, there is provided a mounting board for mounting an electronic component by connecting an electrode on the electronic component to an electrode of the board. An electronic component that is electrically connected is mounted by pressing an electrode on the electronic component to a bump formed on an electrode of the substrate while applying a sound wave.

In a preferred embodiment, for example, in the mounting board according to the ninth aspect,
The electronic component and the substrate may be heated during pressure bonding.

According to another aspect of the present invention, there is provided a mounting board for mounting an electronic component by connecting an electrode on the electronic component to an electrode of the board. An electronic component that is electrically connected is mounted by pressing a bump formed on an electrode of the electronic component onto an electrode of the substrate while applying a sound wave.

In a preferred embodiment, the electronic component and the substrate may be heated at the time of pressure bonding.

According to the present invention, in the bump forming step,
A bump is formed on the electrode of the substrate, and in the pressing step, the electrode on the electronic component is pressed against the bump formed on the electrode of the substrate while applying ultrasonic waves to the substrate. In other words, when connecting the bump electrodes of the electronic component to the substrate by thermocompression bonding, ultrasonic vibration is applied only to the substrate side, so that sufficient bonding strength can be obtained with a simple configuration. This makes it possible to keep the shape of the pressure-bonding bump substantially circular, to eliminate the dependence on the substrate, and to lower the bonding temperature.

[0027]

Embodiments of the present invention will be described below with reference to the drawings.

A. 1. Configuration of Embodiment FIG. 1 is a side view showing a configuration of a bonding apparatus according to an embodiment of the present invention. The bonding apparatus includes a cylindrical bonding stage 2 made of a material such as stainless steel copper and holding a substrate 1. A vacuum source 42 for sucking and fixing the substrate 1 is connected to the bonding stage 2. In addition, bonding
The stage 2 is provided with an ultrasonic vibrator 24 for applying ultrasonic waves to the substrate 1 in contact therewith. Ultrasonic transducer 24
Is ultrasonically oscillated by the ultrasonic oscillation unit 9 at a predetermined timing at a predetermined frequency for a predetermined time. The bonding stage 2 has a heater 13 for heating the substrate 1 therein.

A bonding tool 4 that can detachably hold the electronic component 3 and can be heated is disposed directly above the bonding stage 2. The bonding tool 4 is supported by a lifting drive 6 that drives the bonding tool 4 up and down (arrow Z). The lifting drive unit 6
Is mounted on an XY stage 41 that moves in the XY directions.

The bonding control section 40 controls the elevation drive section 6, the vacuum source 7, the ultrasonic oscillation section 9 and the bonding stage 2 based on a preset program, and performs a series of bonding operations.

For example, as shown in FIG. 2, the electronic component 3 has an outer dimension of 6. Omm, width 6.0 mm, thickness 0.4 mm, and one main surface is made of, for example, 60 aluminum (specifically, Ai-Si, Al-Cu, A
An electrode 10 of (l-Si-Cu) is formed by a sputter method. The shape of each of these electrodes 10 is, for example, a square having a side of 90 μm, and the thickness is 0.5 μm. Each electrode 10 has a diameter of 70 μm and a height of 30 to 1
A gold bump 11 of 00 μm is formed.

On the other hand, the substrate 1 has, for example, a square shape with an outer dimension of 8 mm on a side and a thickness of, for example, 0.1 mm.
mm. Then, an electrode 12 to which the gold bump 11 is connected is formed on the substrate 1 (see FIG. 2). The electrode 12 has a layered structure of Cu / nickel (Ni) / gold (Au), and the uppermost gold layer has a thickness of 0.1 μm or more by an electroplating method (electroless plating may be used). Is formed. As the substrate material, a glass epoxy substrate, a polyimide tape, or the like can be used. Also, a ceramic substrate can be used. In this case, the electrode 12
It has a layered structure of nickel (Ni) / gold (Au), and the uppermost gold layer is formed to a thickness of 0.4 μm by electroless plating.

The heater section 13 provided inside the bonding stage 2 is made of a heating means such as a nichrome wire, and is set so as to heat the substrate 1 to, for example, about 200 ° C. The temperature of the heater unit 13 is controlled by the bonding control unit 40 described above.

On the other hand, the bonding tool 4 has a ceramic heater (not shown) which can be heated by forming a wiring in the ceramic and passing an electric current. The ceramic heater is held by a holder 15, and the holder 15 is supported by a support 16. The holding portion 15 has a main surface of, for example, a 10 mm square and a thickness of, for example, 5 mm, and is made of a material having low thermal conductivity (heat insulating material). As this material, a porous metal material or the like can be considered. The holding unit 15 and the bonding tool 4 (ceramic heater)
A suction hole 17 having an inner diameter of, for example, 0.8 mm is formed. A vacuum source 17 is connected to the suction hole 17 via a pipe.

It is to be noted that the ultrasonic drive block 6 to which the ultrasonic vibrator 24 is fixed is mounted on the XY stage 41 without the lifting drive unit 6 being mounted on the XY stage 41,
It is also possible to move the bonding tool part only in the Z direction by moving it in the Y direction.

B. Next, an operation of the bonding apparatus according to the above-described embodiment will be described. First, the vacuum source 7 is activated based on a control signal from the bonding control unit 40, and the bonding
The electronic component 3 is attracted to the holding portion 15 of the tool 4. Then, the substrate 1 is placed on the bonding stage 2, and the vacuum suction source 42 is turned on to fix the substrate by vacuum suction. on the other hand,
By energizing the heater unit 13 based on a control signal from the bonding control unit 40, the bonding stage 2 is heated to room temperature to about 200 ° C.

Next, the elevation drive unit 6 and the XY stage 41 are activated based on a control signal from the bonding control unit 40, and the bonding tool 4 is lowered with respect to the substrate 1 mounted on the bonding stage 2. Then, the electronic component 3 sucked by the bonding tool 4 is brought into contact with a predetermined connection position of the substrate 1. At this time, the ceramic heater is energized under the control of the bonding control unit 40 to heat the bonding tool 4 and the electronic component 3. The heating start time may be before the substrate 1 and the electronic component 3 come into contact with each other. Further, the heating method may be such that heating is always performed. The heating temperature is about 100C to 500C. The contact causes the gold bump 11 of the electronic component 3 to be pressed against the corresponding electrode 12. The positioning between the electronic component 3 and the substrate 1 is performed by operating the XY table 41 by a control signal applied from the bonding control unit 40 using an imaging device (not shown).

Immediately before the gold bump 11 abuts on the electrode 12, a control signal is applied from the bonding control unit 40 to the ultrasonic oscillator 24, and the ultrasonic vibrator 24 is set to 10.
Vibration is performed at a frequency of KHz to 130 KHz for about 10 to 200 msec (see arrow 52 in FIG. 3). The output at this time is preferably, for example, 10 mW to 5 W.

However, as described above, ultrasonic vibration and heat are applied to the contact portion between the gold bump 11 and the electrode 12 which are heated to a high temperature, and the ultrasonic vibration and heat are applied between the gold bump 11 and the electrode 12. The remaining oxide film is evenly removed. Further, the two are firmly bonded by heat diffusion. When such bonding is completed, the electronic component 3
Is released, and a control signal is applied from the bonding control unit 40 to the lifting / lowering drive unit 6 so that the bonding
The tool 4 is raised.

In order to examine the bonding strength between the bonded substrate 1 and the electronic component 3 in this manner, the shear strength shown in FIG.
When the shear strength was measured by moving the tool in the horizontal direction (arrow 53), a sufficient bonding strength of 30 gf was obtained.

On the other hand, when the diameter of the pressure-bonding bump was measured with a microscope, the gold bump 11 was deformed while maintaining a substantially circular shape, as shown in FIG. That is, the gold bump 11
The crimp diameter after deformation is 70 μm, and one side is 100 μm.
Of the pad electrode 12 forming a square is sufficient.
In FIG. 6, the circle shown by the dotted line is the bump shape before bonding.

In the above embodiment, the bump is formed on the semiconductor component side. However, the present invention is not limited to this, and the gold bump 11 may be formed on the substrate 1 as shown in FIG. In this case, the electrode 10 and the gold bump 11 which are heated to a high temperature
Ultrasonic vibration and heat are applied to the abutting portion, and the oxide film interposed between the gold bump 11 and the electrode 10 is evenly removed, and the two are firmly bonded by diffusion by heat.

In the above-described embodiment, the ultrasonic waves are applied immediately before the gold bumps 11 come into contact with the electrodes 12, but good bonding can be obtained at the time of applying the ultrasonic waves. There is no restriction on the timing as long as the prerequisites are satisfied.

Further, a pressure sensor is incorporated in the bonding tool 4, and the pressure load on the electrode 12 of the gold bump 11 detected by the pressure sensor is, for example, 1 kgf.
The ultrasonic vibration may be applied at the same time as the time has reached.

Further, in the above-described embodiment, a gold bump is used as the bump of the electronic component 3, but for example, a Ni (nickel) bump, a Cu bump, or the like may be used. Further, plating such as Au plating may be performed on these bumps. Further, the present invention can be extendedly applied to the manufacture of general semiconductor devices.

According to the above-described embodiment, when the bump electrode of the electronic component is connected to the substrate by thermocompression bonding, the ultrasonic vibration is applied only to the substrate side. With the simple modification of the FC bonder that has been used, not only can sufficient bonding strength be obtained, but also the pressure bonding bump shape can be kept almost circular, so that bonding can be performed without protruding to the corresponding pad electrode. Become. In addition, since bonding is performed mainly by heat, a strong hold of the substrate is not required, there is no problem in fixing by vacuum suction, and there is little dependence on the substrate.

When bumps are formed on the substrate side,
Since the heat of the semiconductor component is less likely to be transmitted to the substrate side, it is possible to join the electrode 10 and the gold bump 11 by lowering the temperature of the joint while preventing thermal expansion due to heating of the substrate.
In particular, when an electrode of a semiconductor component is formed of Al-Cu or Al-Cu-Si, bonding is more difficult than Al or Al-Si, and thus lowering the bonding temperature is important (too high a temperature). In this case, there is a problem that the connection of the bumps is broken due to a difference in thermal expansion between the semiconductor component and the substrate when the substrate side thermally expands and returns to room temperature.)

[0048]

According to the first aspect of the present invention, after a bump is formed on an electrode of the substrate by a bump forming step, a pressure is applied to the electronic component while applying an ultrasonic wave to the substrate. Of the electrodes and the bumps formed on the electrodes of the substrate, so that with a simple configuration,
Sufficient bonding strength can be obtained, the pressure-bonding bump shape can be kept substantially circular, the dependency on the substrate can be eliminated, and the bonding temperature can be lowered. .

According to the second aspect of the present invention, in the pressing step, the electronic component and the substrate are heated, so that sufficient bonding strength can be obtained with a simple configuration. Advantageously, the pressure-bonding bump shape can be kept substantially circular, the dependence on the substrate can be eliminated, and the joining temperature can be lowered.

According to the third aspect of the present invention, after forming a bump on an electrode of the electronic component by a bump forming step, the electronic component is applied while applying ultrasonic waves to the substrate by a pressure bonding step. Since the bump formed on the upper electrode and the electrode on the substrate are crimped, with a simple configuration, sufficient bonding strength can be obtained, and the crimp bump shape can be kept substantially circular, and This has the advantage that substrate dependence can be eliminated.

According to the fourth aspect of the present invention, in the pressing step, the electronic component and the substrate are heated, so that a sufficient bonding strength can be obtained with a simple configuration. The advantage is obtained that the pressure-bonding bump shape can be kept substantially circular and the dependence on the substrate can be eliminated.

According to the fifth aspect of the present invention, while applying ultrasonic waves to the substrate by the ultrasonic wave generating means,
Since the crimping means presses the electrode on the electronic component and the bump formed on the electrode on the substrate,
With a simple configuration, sufficient bonding strength can be obtained, the pressure-bonding bump shape can be kept substantially circular, the dependence on the substrate can be eliminated, and the bonding temperature can be reduced. The advantage is obtained.

According to the sixth aspect of the present invention, the first
The above-mentioned heating means heats the electronic component at the time of crimping by the crimping means, and the second heating means heats the substrate at the time of crimping by the crimping means. , The pressure-bonding bump shape can be kept substantially circular, the dependence on the substrate can be eliminated, and the joining temperature can be lowered.

According to the seventh aspect of the present invention, while applying ultrasonic waves to the substrate by the ultrasonic wave generating means,
Since the crimping means crimps the bump formed on the electrode on the electronic component and the electrode on the substrate,
With a simple configuration, it is possible to obtain an advantage that sufficient bonding strength can be obtained, the pressure-bonding bump shape can be kept substantially circular, and dependency on the substrate can be eliminated.

According to the eighth aspect of the present invention, the first
The above-mentioned heating means heats the electronic component at the time of crimping by the crimping means, and the second heating means heats the substrate at the time of crimping by the crimping means. , The pressure-bonding bump shape can be kept substantially circular, and the dependency on the substrate can be eliminated.

According to the ninth aspect of the present invention, while applying ultrasonic waves to the substrate, an electrode on the electronic component is pressure-bonded to a bump formed on an electrode on the substrate, thereby providing electrical connection. Since the connected electronic components are mounted, sufficient bonding strength can be obtained with a simple configuration, the crimping bump shape can be kept almost circular, and the dependence on the board can be eliminated. In addition, there is an advantage that the joining temperature can be reduced.

According to the tenth aspect of the present invention, since the electronic component and the substrate are heated at the time of pressing, sufficient bonding strength can be obtained with a simple structure, and the pressure bonding bump can be obtained. The advantage is that the shape can be kept substantially circular, the dependence on the substrate can be eliminated, and the joining temperature can be lowered.

According to the eleventh aspect of the present invention, while applying ultrasonic waves to the substrate, the bumps formed on the electrodes of the electronic component are pressure-bonded to the electrodes of the substrate, thereby providing electrical connection. Since the connected electronic components are mounted, sufficient bonding strength can be obtained with a simple configuration, the pressure bonding bump shape can be kept substantially circular, and the dependence on the substrate can be eliminated. The advantage is obtained.

According to the twelfth aspect of the present invention, since the electronic component and the substrate are heated at the time of pressing, sufficient bonding strength can be obtained with a simple structure, and the pressing bump can be obtained. The advantage is obtained that the shape can be kept substantially circular and the dependence on the substrate can be eliminated.

[Brief description of the drawings]

FIG. 1 is a side view showing a configuration of a bonding apparatus according to an embodiment of the present invention.

FIG. 2 is a side view for explaining a joint portion between an electronic component and a substrate.

FIG. 3 is a top view for explaining application of ultrasonic vibration.

FIG. 4 is a side view for explaining a test method for examining the bonding strength between the bonded substrate 1 and the electronic component 3 using a shear tool.

FIG. 5 is a top view for explaining the shape of the pressure bonding bump formed by the bonding device according to the present embodiment.

FIG. 6 is a side view for explaining a bonding step when a gold bump is formed on a substrate side.

FIG. 7 is a top view for explaining flip chip bonding according to the prior art.

[Explanation of symbols]

DESCRIPTION OF SYMBOLS 1 ... board | substrate, 2 ... bonding stage, 3 ... electronic components, 4 ... bonding tool (crimping means, 1st
Heating means), 6... Elevating drive unit, 7... Vacuum source, 9.
... Ultrasonic oscillator (Ultrasonic generator), 10 ... Electrode, 1
1 ... gold bump, 13 ... heater part (second heating means), 24 ... ultrasonic vibrator (ultrasonic wave generating means), 40
... Bonding control unit, 41 XY stage, 42
...... Vacuum source

Claims (12)

[Claims] 1. A bonding method for connecting an electrode on an electronic component and an electrode on a substrate, comprising: a bump forming step of forming a bump on the electrode on the substrate; A bonding method comprising: a pressing step of pressing an upper electrode and a bump formed on an electrode of the substrate. 2. The bonding method according to claim 1, wherein, in the pressing step, the electronic component and the substrate are heated. 3. A bonding method for connecting an electrode on an electronic component to an electrode on a substrate, comprising: a bump forming step of forming a bump on an electrode of the electronic component; A bonding method, comprising: a pressing step of pressing a bump formed on an electrode on a component and an electrode on the substrate. 4. The bonding method according to claim 3, wherein, in the pressing step, the electronic component and the substrate are heated. 5. A bonding apparatus for connecting an electrode on an electronic component to an electrode on a substrate, comprising: an ultrasonic generator for applying an ultrasonic wave to the substrate; and an ultrasonic generator formed on the electrode on the electronic component and the electrode on the substrate. And a crimping means for crimping the set bumps. 6. A method according to claim 1, further comprising: first heating means for heating said electronic component at the time of pressure bonding by said pressure bonding means; and second heating means for heating said substrate at the time of pressure bonding by said pressure bonding means. Item 6. The bonding apparatus according to Item 5. 7. A bonding apparatus for connecting an electrode on an electronic component to an electrode on a substrate, wherein: an ultrasonic generator for applying an ultrasonic wave to the substrate; and a bump formed on the electrode on the electronic component and the substrate. A bonding device comprising: a pressure bonding means for pressing the upper electrode. 8. The apparatus according to claim 1, further comprising: a first heating unit that heats the electronic component during the pressing by the pressing unit; and a second heating unit that heats the substrate during the pressing by the pressing unit. Item 8. The bonding apparatus according to Item 7. 9. A mounting board on which an electronic component is mounted by connecting an electrode on the electronic component and an electrode on a substrate, wherein an ultrasonic wave is applied to the substrate while a bump formed on the electrode on the substrate is An electronic component which is electrically connected by crimping an electrode on the electronic component. 10. The mounting board according to claim 9, wherein the electronic component and the board are heated during pressure bonding. 11. A mounting board on which an electronic component is mounted by connecting an electrode on the electronic component and an electrode on a substrate, wherein the electrode of the electronic component is placed on the electrode of the substrate while applying ultrasonic waves to the substrate. A mounting board, on which electronic components electrically connected to each other are mounted by crimping bumps formed thereon. 12. The mounting board according to claim 11, wherein the electronic component and the board are heated during pressure bonding.