JPH1012669A - Connection of flip chip - Google Patents
Connection of flip chipInfo
- Publication number
- JPH1012669A JPH1012669A JP16160596A JP16160596A JPH1012669A JP H1012669 A JPH1012669 A JP H1012669A JP 16160596 A JP16160596 A JP 16160596A JP 16160596 A JP16160596 A JP 16160596A JP H1012669 A JPH1012669 A JP H1012669A
- Authority
- JP
- Japan
- Prior art keywords
- flip chip
- bump
- connection
- substrate
- bumps
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
- H01L2224/75—Apparatus for connecting with bump connectors or layer connectors
- H01L2224/7525—Means for applying energy, e.g. heating means
- H01L2224/75251—Means for applying energy, e.g. heating means in the lower part of the bonding apparatus, e.g. in the apparatus chuck
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
- H01L2224/75—Apparatus for connecting with bump connectors or layer connectors
- H01L2224/7525—Means for applying energy, e.g. heating means
- H01L2224/75252—Means for applying energy, e.g. heating means in the upper part of the bonding apparatus, e.g. in the bonding head
Landscapes
- Wire Bonding (AREA)
Abstract
Description
【0001】[0001]
【発明の属する技術分野】本発明はフリップチップの接
続方法に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for connecting flip chips.
【0002】[0002]
【従来の技術】半導体素子の実装技術として、半導体素
子チップ(フリップチップ)を配線基板にフェースダウ
ン方式でボンディング(実装)することが知られてい
る。すなわち、半導体装置を形成(構成)する有効な手
段として、所要の被接続端子群が設けられている基板面
に、半導体素子チップの対応する電極群を対向させ、か
つ被接続端子面もしくは電極面に設けたバンブを介して
圧着し、電気的および機械的な接続を行う方式が採られ
つつある。このフリップチップ接続方式は、従来の一般
的なワイヤボンディング方式に比べて、フリップチップ
の電極群および対応する基板の被接続端子群を一括的に
接続できるので、生産性(もしくは量産性)の点ですぐ
れている。2. Description of the Related Art As a semiconductor element mounting technique, it is known to bond (mount) a semiconductor element chip (flip chip) to a wiring board by a face-down method. That is, as an effective means for forming (constructing) a semiconductor device, a corresponding electrode group of a semiconductor element chip is opposed to a substrate surface on which a required connected terminal group is provided, and a connected terminal surface or an electrode surface is provided. A method of performing crimping via a bump provided in the above and making electrical and mechanical connection is being adopted. The flip-chip connection method can collectively connect the flip-chip electrode group and the connected terminal group of the corresponding substrate, as compared with the conventional general wire bonding method, thereby improving productivity (or mass productivity). Is excellent.
【0003】ところで、フリップチップの接続に当たっ
ては、その電気的および機械的な接続の信頼性を得るう
えで、接続の主体を成すバンブの表面酸化層(酸化膜)
の除去が重要であり、一般的に、次のような処理が施さ
れている。In connection with flip chip connection, in order to obtain the reliability of the electrical and mechanical connection, the surface oxide layer (oxide film) of the bump which forms the connection main body.
Is important, and the following treatment is generally performed.
【0004】(1)フラックスの使用 予めバンブまたは基板の被接続端子に、ロジン系もしく
は水溶性のフラックスを印刷法やディスペンスなどで塗
布しておき、基板にフリップチップをマウントした後、
たとえば窒素ガスなどの不活性雰囲気中でリフローする
ことによって、バンブ面または基板の被接続端子面の酸
化層を除去する一方、所要の接続を行う。 (2)物理的
な除去 たとえばアルゴンや六フッ化硫黄などのガスを用いて、
バンブ面または基板の被接続端子面の酸化層をスパッタ
で除去する。(1) Use of flux A rosin-based or water-soluble flux is previously applied to a bump or a terminal to be connected to a substrate by a printing method or dispensing, and a flip chip is mounted on the substrate.
For example, by performing reflow in an inert atmosphere such as a nitrogen gas, an oxide layer on the bump surface or the connected terminal surface of the substrate is removed, and required connection is performed. (2) Physical removal For example, using a gas such as argon or sulfur hexafluoride,
The oxide layer on the bump surface or the connected terminal surface of the substrate is removed by sputtering.
【0005】(3)還元除去 たとえば窒素−水素系雰囲気中、もしくは一酸化炭素ガ
ス雰囲気中に放置して、バンブ面の酸化層を化学反応
(還元反応)によって除去する。(3) Removal by reduction For example, the oxide layer on the surface of the bump is removed by a chemical reaction (reduction reaction) by leaving it in a nitrogen-hydrogen atmosphere or a carbon monoxide gas atmosphere.
【0006】[0006]
【発明が解決しようとする課題】しかしながら、上記の
酸化層除去手段を含むフリップチップの接続方法は、な
お、以下に示すような問題があって実用上十分でない。However, the flip chip connection method including the oxide layer removing means has the following problems and is not practically sufficient.
【0007】先ず、 (1)フラックス使用の場合は、塗布
量によってバンブのオープン/ショートの接続不良が発
生し易いので、塗布量を高精度に制御する必要がある。
また、接続操作後において、フラックスが付着・残存し
ていると腐食の原因となって、接続の信頼性が損なわれ
るので、フラックスを洗浄除去する必要がある。これら
フラックス塗布量の制御およびフラックスの洗浄除去
は、接続操作の煩雑化となって、量産性という特長を損
なうことになる。First, (1) in the case of using a flux, connection failure of open / short of the bump is likely to occur depending on the amount of application, so it is necessary to control the amount of application with high precision.
Further, after the connection operation, if the flux adheres or remains, it causes corrosion and the reliability of the connection is impaired. Therefore, it is necessary to wash and remove the flux. The control of the flux application amount and the cleaning and removal of the flux complicate the connection operation and impair the feature of mass productivity.
【0008】次に、 (2)物理的な除去の場合は、スパッ
タ雰囲気の管理やスパッタ直後の処置が煩雑で、実施面
で問題がある。たとえばアルゴンガススパッタの場合、
スパッタ直後のバンブは酸化層が除去されているが、ア
ルゴン雰囲気から大気に一瞬でも触れた時点で、再度酸
化層が形成される。したがって、スパッタ−マウント−
リフローまでの工程をアルゴンガス雰囲気中で行う必要
があり、結果的に装置,設備費が膨大となるなどの問題
がある。一方、六フッ化硫黄ガススパッタの場合も、雰
囲気管理が難しくて実用性が劣る。Next, (2) in the case of physical removal, the management of the sputtering atmosphere and the treatment immediately after the sputtering are complicated, and there is a problem in terms of implementation. For example, in the case of argon gas sputtering,
Although the oxide layer has been removed from the bump immediately after sputtering, the oxide layer is formed again when the bump comes into contact with the air from the argon atmosphere even for a moment. Therefore, spatter-mount-
It is necessary to perform the process up to the reflow in an argon gas atmosphere, resulting in a problem that the equipment and facility costs are enormous. On the other hand, also in the case of sulfur hexafluoride gas sputtering, the atmosphere management is difficult and the practicality is poor.
【0009】さらに、 (3)還元除去の場合も雰囲気管理
の点に問題がある。たとえば窒素−水素系雰囲気での還
元処理では、酸素ガス濃度を1ppm以下,露点−60℃以
下,水素ガス分圧および露点管理が重要なファクターを
成している。したがって、効果的ないし効率的な還元処
理は、これらの適正な条件・制御が前提となるが、適正
な条件・制御の選択・設定は事実上困難である。また、
窒素−水素系雰囲気では、窒素ガスと水素ガスとの混合
比率が 4: 1, 1: 1で、水素ガスの比率が比較的高い
ため、取扱操作上の危険性も懸念される。一方、一酸化
炭素ガスは、還元雰囲気や放置時間の制御が困難で、実
用性が劣るといえる。Further, (3) also in the case of reduction removal, there is a problem in the point of atmosphere control. For example, in a reduction treatment in a nitrogen-hydrogen atmosphere, important factors are an oxygen gas concentration of 1 ppm or less, a dew point of -60 ° C. or less, and a hydrogen gas partial pressure and dew point management. Therefore, effective or efficient reduction processing is based on these appropriate conditions and controls, but it is practically difficult to select and set appropriate conditions and controls. Also,
In a nitrogen-hydrogen atmosphere, the mixing ratio of nitrogen gas and hydrogen gas is 4: 1, 1: 1 and the ratio of hydrogen gas is relatively high, so there is concern about danger in handling operations. On the other hand, it is difficult to control the reducing atmosphere and the standing time of carbon monoxide gas, and it can be said that the utility is inferior.
【0010】なお、物理的な除去および還元除去の場
合、いずれもマウント時には基板にフリップチップを載
置した状態であるため、微小な振動でも位置ズレを起こ
し易いので、マウントからリフローまでの取扱が難しい
という問題もある。In both physical removal and reduction removal, the flip chip is mounted on the substrate at the time of mounting, so that even small vibrations can easily cause a positional shift. There is also a problem that it is difficult.
【0011】本発明は、上記事情に対処してなされたも
ので、工程の簡略化を図る一方、歩留まりよく、かつ信
頼性の高い接続が行われるフリップチップの接続方法の
提供を目的とする。SUMMARY OF THE INVENTION The present invention has been made in view of the above circumstances, and has as its object to provide a flip-chip connection method capable of simplifying the process while achieving a high-yield and highly reliable connection.
【0012】[0012]
【課題を解決するための手段】請求項1の発明は、基板
面の被接続端子群に、バンプを介してフリップチップ面
の対応する電極群を接続するに当たって、前記バンブに
超音波振動を付与し、バンブ面の酸化膜除去および摩擦
による接続を行うことを特徴とするフリップチップの接
続方法である。According to a first aspect of the present invention, in connecting a corresponding electrode group on a flip chip surface to a connected terminal group on a substrate surface via a bump, an ultrasonic vibration is applied to the bump. In addition, a flip chip connection method is characterized in that an oxide film on the bump surface is removed and connection is performed by friction.
【0013】請求項2の発明は、基板面の被接続端子群
に、フリップチップ面の対応する電極面に設けたバンプ
を対接する工程と、前記基板およびフリップチップの少
なくともいずれか一方に超音波振動を付与し、バンブ面
の酸化膜除去および摩擦による接続を行う工程とを有す
ることを特徴とするフリップチップの接続方法である。
請求項3の発明は、フリップチップ面の電極群に、基
板面の対応する被接続端子面に設けたバンプを対接する
工程と、前記フリップチップおよび基板の少なくともい
ずれか一方に超音波振動を付与し、バンブ面の酸化膜除
去および摩擦による接続を行う工程とを有することを特
徴とするフリップチップの接続方法である。 すなわ
ち、これらの発明は、フリップチップボンダーのマウン
トヘッドもしくは基板ステージの少なくともいずれか一
方に、超音波出力用の振動子を具備・装着しておき、フ
リップチップ接続のためにバンブと電極端子もしくは基
板の被接続端子とを位置合わせし、バンブを介して電極
端子と被接続端子とを対接させた状態で、マウントヘッ
ドに荷重を加えた後に超音波振動子を動作させる。つま
り、前記バンブが対接する電極端子部もしくはバンブが
対接する被接続端子部に、所要の超音波振動を与えるこ
とを骨子としている。According to a second aspect of the present invention, there is provided a step of bringing a bump provided on a corresponding electrode surface of a flip chip surface into contact with a group of connected terminals on a substrate surface, and an ultrasonic wave being applied to at least one of the substrate and the flip chip. Applying vibration to remove the oxide film on the bump surface and performing connection by friction.
The invention according to claim 3 is a step of bringing a bump provided on a corresponding connected terminal surface of a substrate surface into contact with an electrode group on the flip chip surface, and applying ultrasonic vibration to at least one of the flip chip and the substrate. And removing the oxide film from the bump surface and performing connection by friction. That is, in these inventions, a vibrator for ultrasonic output is provided and mounted on at least one of the mount head of the flip chip bonder and the substrate stage, and a bump and an electrode terminal or a substrate are connected for flip chip connection. The ultrasonic vibrator is operated after a load is applied to the mount head in a state where the electrode terminal and the connected terminal are brought into contact with each other via the bumps. In other words, the essential point is to apply a required ultrasonic vibration to the electrode terminal portion with which the bump contacts or the connected terminal portion with which the bump contacts.
【0014】ここで、超音波振動はフリップチップもし
くは基板を介して、バンブ−電極端子の対接面もしくは
バンブ−被接続端子の対接面に到達する。この伝達され
た超音波振動によって、前記バンブ−電極端子の対接面
もしくはバンブ−被接続端子の両対接面の酸化層が破壊
され、露出した新生面同士の接触となって仮付けが同時
に行われる。そして、その後の不活性雰囲気中でのリフ
ローによって、前記バンブを介した電極端子と被接続端
子との最終的な接続が終了する。Here, the ultrasonic vibration reaches the contact surface of the bump-electrode terminal or the contact surface of the bump-connected terminal via the flip chip or the substrate. Due to the transmitted ultrasonic vibration, the oxide layer on the contact surface of the bump-electrode terminal or on both contact surfaces of the bump-connecting terminal is destroyed, and the exposed new surfaces come into contact with each other, so that the tacking is performed simultaneously. Will be Then, the final connection between the electrode terminal and the connected terminal via the bump is completed by reflow in an inert atmosphere.
【0015】[0015]
【発明の実施の形態】以下図1および図2 (a)〜 (e)を
参照して実施例を説明する。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS An embodiment will be described below with reference to FIGS. 1 and 2 (a) to 2 (e).
【0016】図1はこの実施例において使用した接続装
置(ボンディング装置)の接続部構成の概略を示す断面
図である。図1において、1は第1の超音波振動子2aを
内蔵した基板ステージで、所要の被接続端子3a群を一主
面に有する基板3を位置決めセット(載置)するもので
ある。4は第2の超音波振動子2bを内蔵し、かつフリッ
プチップ5を先端面に真空吸着するマウントヘッドで、
前記基板ステージ1の基板3載置面に対向して配置され
ている。また、図示を省略したが、前記基板ステージ1
およびマウントヘッド4は、図示を省略した機構によっ
て相対的に離接するとともに、両超音波振動子2a,2bを
作動する電源回路などを具備している。次に、上記接続
装置によるフリップチップの接続方法の実施似ついて説
明する。図2 (a)〜 (e)は、フリップチップの接続工程
の順に、その実施態様の要部を模式的に示した断面図で
ある。先ず、図2 (a)に示すごとく、前記基板ステージ
1に被接続端子3a群を一主面に有する基板3を移載する
一方、マウントヘッド4に吸着保持させたフリップチッ
プ5を対向させて位置合わせを行う。ここで、フリップ
チップ5は、前記被接続端子3a群に対応する電極端子群
を一主面に有し、かつ各電極端子面にバンブ5aが設けら
れており、このバンブ5a群を対応する被接続端子3a群と
位置合わせすることになる。なお、この位置合わせは、
バンブ5a群および対応する被接続端子3aパターンをボン
ダーで確認し、微調整を行って、バンブ5aと被接続端子
3aとのセンターを合わせる。FIG. 1 is a sectional view schematically showing the structure of the connecting portion of the connecting device (bonding device) used in this embodiment. In FIG. 1, reference numeral 1 denotes a substrate stage having a built-in first ultrasonic transducer 2a for positioning (placing) a substrate 3 having a required group of connected terminals 3a on one main surface. Reference numeral 4 denotes a mount head which incorporates the second ultrasonic vibrator 2b and vacuum-adsorbs the flip chip 5 to the front end surface.
The substrate stage 1 is arranged so as to face the substrate 3 mounting surface. Although not shown, the substrate stage 1
The mount head 4 is relatively separated from and connected to the mount head 4 by a mechanism (not shown), and includes a power supply circuit for operating the ultrasonic transducers 2a and 2b. Next, a description will be given of an embodiment of a flip chip connection method using the connection device. 2 (a) to 2 (e) are cross-sectional views schematically showing main parts of the embodiment in the order of flip chip connection steps. First, as shown in FIG. 2A, a substrate 3 having a group of connected terminals 3a on one main surface is transferred onto the substrate stage 1, while a flip chip 5 sucked and held by a mount head 4 is opposed to the substrate. Perform positioning. Here, the flip chip 5 has an electrode terminal group corresponding to the connected terminal group 3a on one main surface, and a bump 5a is provided on each electrode terminal surface. It will be aligned with the connection terminal group 3a. In addition, this alignment
Check the bump 5a group and the corresponding connected terminal 3a pattern with a bonder, make fine adjustments, and
Align the center with 3a.
【0017】次いで、マウントヘッド4を下降させ、衝
撃がかからない状態で、図2 (b)に示すごとく、対応す
るバンブ5aと被接続端子3aとを対接(接触)させる。そ
の後、図2 (c)に示すごとく、マウントヘッド4に所要
の荷重(たとえば 程度)を加え、前記対応するバ
ンブ5aと被接続端子3aとを十分に対接させる。なお、こ
こでの荷重は、フリップチップ5にダメージが入らない
程度に設定する。Next, the mount head 4 is lowered, and the corresponding bump 5a and the connected terminal 3a are brought into contact with each other in a state where no impact is applied, as shown in FIG. 2B. Thereafter, as shown in FIG. 2 (c), a required load (for example, about) is applied to the mount head 4, and the corresponding bump 5a and the connected terminal 3a are sufficiently brought into contact with each other. The load here is set to such an extent that the flip chip 5 is not damaged.
【0018】次に、前記対応するバンブ5aと被接続端子
3aに一定の荷重を加えた状態で、図2 (d)に示すごと
く、たとえばマウントヘッド4に内蔵された第2の超音
波振動子2bを作動させる。この第2の超音波振動子2bの
作動により、超音波振動がマウントヘッド4→フリップ
チップ5→バンプ5aの順に伝わって、基板3面の被接続
端子3aとフリップチップ5面のバンプ5aとが接触する領
域で摩擦が起こる。この局部的な摩擦発生によって、前
記被接続端子3a表面およびバンプ5a表面に形成されてい
た酸化層(酸化膜)を破壊し、新生面同士の接触に変わ
り、さらに、超音波振動の続行によって、新生面同士が
接触した被接続端子3aとバンプ5aとは、前記接触点で結
合し、フリップチップ5は基板3に仮付けされた状態に
なる。Next, the corresponding bump 5a and the connected terminal
In a state where a constant load is applied to 3a, as shown in FIG. 2D, for example, the second ultrasonic vibrator 2b built in the mount head 4 is operated. By the operation of the second ultrasonic vibrator 2b, the ultrasonic vibration is transmitted in the order of the mount head 4, the flip chip 5, and the bump 5a, so that the connected terminal 3a on the substrate 3 and the bump 5a on the flip chip 5 are connected. Friction occurs in the area of contact. Owing to this local friction, the oxide layer (oxide film) formed on the surface of the connected terminal 3a and the surface of the bump 5a is destroyed, and the new surface is changed into contact with each other. The connected terminal 3a and the bump 5a, which are in contact with each other, are connected at the contact point, and the flip chip 5 is temporarily attached to the substrate 3.
【0019】前記対応する各被接続端子3aとバンプ5aの
新生面同士の結合後、マウントヘッド4はフリッブチッ
プ5のの真空吸着を解除し、上昇することによってマウ
ントが終了する。このマウント終了後、前記フリップチ
ップ5を仮付した基板3は、たとえば窒素雰囲気化され
ているリフ炉を通過することにより、バンブ5a全体が溶
融し、図2 (e)に示すごとく、フリップチップ5の電気
的および機械的な所要の接続がなされる。After the corresponding connected terminals 3a and the new surfaces of the bumps 5a have been joined together, the mount head 4 releases the vacuum suction of the flip chip 5 and rises to complete the mounting. After completion of the mounting, the substrate 3 to which the flip chip 5 has been temporarily attached is passed through, for example, a riff furnace in a nitrogen atmosphere, whereby the entire bump 5a is melted, and as shown in FIG. The required 5 electrical and mechanical connections are made.
【0020】たとえば、上記において、一主面の周辺部
に被接続端子3aが 程度のピッチで設けられている基
板3に、対応する電極端子面にバンブ5aが設けられてい
るフリップチップ5をマウントおよび接続した実装回路
部品について、その接続の信頼性などを評価・検討した
ところ、従来の接続方法に比べて大幅に向上していた。
なお、上記フリップチップ5の基板3に対する接続に
おいて、マウントヘッド4が内蔵する第2の超音波振動
子2bを動作させ、所要の超音波振動をバンブ5aと被接続
端子3aとの接触部に付与したが、基板ステージ1内蔵す
る第1の超音波振動子2aを動作させ、所要の超音波振動
をバンブ5aと被接続端子3aとの接触部に付与しても、あ
るいは第1の超音波振動子2a第2の超音波振動子2bを同
時に動作させても同様の作用,効果が認められた。ま
た、前記では、電極端子面にバンブ5aを設けたフリップ
チップ5の接続例を示したが、被接続端子3a面にバンブ
を設けた基板3に、電極端子面にバンブを設けてないフ
リップチップを接続した場合も、同様の作用,効果が認
められた。For example, in the above, the flip chip 5 in which the bumps 5a are provided on the corresponding electrode terminal surfaces is mounted on the substrate 3 on which the connected terminals 3a are provided on the periphery of one main surface at a small pitch. When the reliability of the connection and the like of the connected mounted circuit components were evaluated and examined, it was found to be greatly improved as compared with the conventional connection method.
In connecting the flip chip 5 to the substrate 3, the second ultrasonic vibrator 2b built in the mount head 4 is operated to apply required ultrasonic vibration to the contact portion between the bump 5a and the terminal 3a to be connected. However, the first ultrasonic vibrator 2a built in the substrate stage 1 is operated to apply the required ultrasonic vibration to the contact portion between the bump 5a and the connected terminal 3a, or the first ultrasonic vibration Similar operations and effects were observed when the second ultrasonic transducer 2b was simultaneously operated with the second transducer 2a. Further, in the above description, the connection example of the flip chip 5 having the bump 5a on the electrode terminal surface is shown. However, the flip chip without the bump on the electrode terminal surface is provided on the substrate 3 having the bump 3 on the connected terminal 3a surface. The same operation and effect were also observed when was connected.
【0021】この発明は、上記実施例に限定されるもの
でなく、発明の趣旨を逸脱しない範囲でいろいろの変形
を採ることができる。The present invention is not limited to the above embodiment, and various modifications can be made without departing from the spirit of the invention.
【0022】[0022]
【発明の効果】上記説明したように、本発明のフリップ
チップの接続方法によれば、被接続部の酸化層など容易
に除去でき、信頼性の高い電気的な接続など行うことが
できる。すなわち、煩雑な操作や、微妙な工程管理など
を要することなく、バンブ面などの酸化膜が除去され、
新生面によって電気的および機械的な接続を行うことが
できるので、信頼性の高い半導体実装装置(もしくは半
導体実装回路装置)を、歩留まりよく、また、量産的に
提供できる。As described above, according to the flip chip connection method of the present invention, an oxide layer at a portion to be connected can be easily removed, and highly reliable electrical connection can be performed. In other words, the oxide film such as the bump surface is removed without complicated operations or delicate process control,
Since the electrical and mechanical connection can be performed by the new surface, a highly reliable semiconductor mounting device (or a semiconductor mounting circuit device) can be provided with high yield and mass production.
【図1】実施例において使用した接続装置の要部を示す
断面図。FIG. 1 is a sectional view showing a main part of a connection device used in an embodiment.
【図2】フリップチップの接続方法の実施態様例を模式
的に示したもので、 (a)は対応する被接続端子とバンブ
との位置合わせ状態の断面図、 (b)は位置合わせした被
接続端子とバンブとの対接状態の断面図、 (c)は対接被
接続端子とバンブに荷重をかけた状態の断面図、 (d)は
超音波振動を併用して仮付けした状態の断面図、(e)は
リフロー処理した接続終了状態の断面図。FIGS. 2A and 2B schematically show an embodiment of a flip chip connection method, in which FIG. 2A is a cross-sectional view of a state in which a corresponding connected terminal and a bump are aligned, and FIG. Sectional view of the contact state between the connection terminal and the bump, (c) is a cross-sectional view of the state where a load is applied to the connection-to-be-connected terminal and the bump, and (d) is the state of temporary attachment using ultrasonic vibration. FIG. 3E is a cross-sectional view showing a connection end state after the reflow processing.
1……基板ステージ 2a,2b……超音波振動子 3……基板 3a……被接続端子 4……マウントヘッド 5……フリップチップ 5a……バンブ DESCRIPTION OF SYMBOLS 1 ... Substrate stage 2a, 2b ... Ultrasonic transducer 3 ... Substrate 3a ... Connected terminal 4 ... Mount head 5 ... Flip chip 5a ... Bump
Claims (3)
てフリップチップ面の対応する電極群を接続するに当た
って、 前記バンブに超音波振動を付与し、バンブ面の酸化膜除
去および摩擦による接続を行うことを特徴とするフリッ
プチップの接続方法。When connecting a corresponding electrode group on a flip chip surface to a connected terminal group on a substrate surface via a bump, an ultrasonic vibration is applied to the bump to remove an oxide film on the bump surface and friction. A connection method for a flip chip, wherein connection is performed.
プ面の対応する電極面に設けたバンプを対接する工程
と、 前記基板およびフリップチップの少なくともいずれか一
方に超音波振動を付与し、バンブ面の酸化膜除去および
摩擦による接続を行う工程とを有することを特徴とする
フリップチップの接続方法。2. A step of bringing a bump provided on a corresponding electrode surface of a flip chip surface into contact with a group of connected terminals on a substrate surface, and applying ultrasonic vibration to at least one of the substrate and the flip chip. Removing the oxide film from the bump surface and performing connection by friction.
対応する被接続端子面に設けたバンプを対接する工程
と、 前記フリップチップおよび基板の少なくともいずれか一
方に超音波振動を付与し、バンブ面の酸化膜除去および
摩擦による接続を行う工程とを有することを特徴とする
フリップチップの接続方法。3. A step of bringing a bump provided on a corresponding connected terminal surface of a substrate surface into contact with an electrode group on a flip chip surface, and applying ultrasonic vibration to at least one of the flip chip and the substrate; Removing the oxide film from the bump surface and performing connection by friction.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP16160596A JPH1012669A (en) | 1996-06-21 | 1996-06-21 | Connection of flip chip |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP16160596A JPH1012669A (en) | 1996-06-21 | 1996-06-21 | Connection of flip chip |
Publications (1)
Publication Number | Publication Date |
---|---|
JPH1012669A true JPH1012669A (en) | 1998-01-16 |
Family
ID=15738343
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP16160596A Pending JPH1012669A (en) | 1996-06-21 | 1996-06-21 | Connection of flip chip |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH1012669A (en) |
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP1209736A2 (en) * | 2000-11-17 | 2002-05-29 | Sony Corporation | Semiconductor device and method of fabricating semiconductor device |
EP1195806A3 (en) * | 2000-10-04 | 2002-06-12 | Sony Corporation | Method for underfilling a flip-chip semiconductor device |
JP2002184810A (en) * | 2000-12-19 | 2002-06-28 | Sony Corp | Bonding method and device and packaging board |
US6509206B2 (en) | 2000-12-11 | 2003-01-21 | Mitsubishi Denki Kabushiki Kaisha | Method and apparatus for manufacturing semiconductor device, and semiconductor device manufactured by the method |
JP2005159356A (en) * | 2003-11-25 | 2005-06-16 | Ja-Uk Koo | Flip chip joining method whose bonding capacity in flip chip packaging process improves, and metal laminate structure of substrate for it |
JP2009206353A (en) * | 2008-02-28 | 2009-09-10 | Denso Corp | Mounting method for semiconductor device |
US8939346B2 (en) | 2011-02-15 | 2015-01-27 | International Business Machines Corporation | Methods and systems involving soldering |
-
1996
- 1996-06-21 JP JP16160596A patent/JPH1012669A/en active Pending
Cited By (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP1195806A3 (en) * | 2000-10-04 | 2002-06-12 | Sony Corporation | Method for underfilling a flip-chip semiconductor device |
EP1209736A2 (en) * | 2000-11-17 | 2002-05-29 | Sony Corporation | Semiconductor device and method of fabricating semiconductor device |
EP1209736A3 (en) * | 2000-11-17 | 2002-07-24 | Sony Corporation | Semiconductor device and method of fabricating semiconductor device |
US6509206B2 (en) | 2000-12-11 | 2003-01-21 | Mitsubishi Denki Kabushiki Kaisha | Method and apparatus for manufacturing semiconductor device, and semiconductor device manufactured by the method |
JP2002184810A (en) * | 2000-12-19 | 2002-06-28 | Sony Corp | Bonding method and device and packaging board |
JP2005159356A (en) * | 2003-11-25 | 2005-06-16 | Ja-Uk Koo | Flip chip joining method whose bonding capacity in flip chip packaging process improves, and metal laminate structure of substrate for it |
JP2009206353A (en) * | 2008-02-28 | 2009-09-10 | Denso Corp | Mounting method for semiconductor device |
US8939346B2 (en) | 2011-02-15 | 2015-01-27 | International Business Machines Corporation | Methods and systems involving soldering |
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