JPH09181491A - Method and structure for mounting semiconductor device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To reduce the man-hours for mounting a semiconductor device, in which an anisotropic conductive film with the same area as that of the semiconductor device is provided without using an insulating resin for sealing the outside of the semiconductor device. SOLUTION: In a first step, a given face 61 of a semiconductor device 60 is joined by thermal pressure to an anisotropic conductive film 70 having an area a little larger than that of the face 61. In this way, the anisotropic conductive film 70 is bonded to the given face 61 of the semiconductor device 60. In a second step the other face 75 than the bonded face 61 in the semiconductor device 60 is bonded by thermocompression to the part mounting face 51 of the board.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor device mounting method and structure for mounting a semiconductor device on a substrate using an anisotropic conductive film.

[0002]

2. Description of the Related Art As one of methods for mounting a semiconductor device on a substrate, there is a flip chip mounting method using an anisotropic conductive film. A conventional technique of this mounting method will be described with reference to FIGS.

A plurality of wiring patterns 22 are formed of a conductive material on a component mounting surface 21 of a substrate 20 on which a bare IC chip 10 which is a semiconductor device is mounted, and each wiring pattern 22 has a tip end surface. Is plated with gold to form an electrode 23. Further, each wiring pattern 22 is covered with a solder resist 24 except for the electrode 23.

The bare IC chip 10 has an A on the predetermined surface 11.
a plurality of electrodes 12 formed of a conductive material such as
Bumps 13 are formed on the surface of each electrode 12, respectively. Bump 13 is Au
Alternatively, it is made of a metal material such as Sn—Pb alloy.

The anisotropic conductive film 30 used for mounting the bare IC chip 10 has an insulating resin 31 and conductive particles 32.
Are formed in a mixed manner. The anisotropic conductive film 30 is formed in a tape shape having a width larger than the width of the predetermined surface 11 of the bare IC chip 10, and one surface is covered with a protective tape and the other surface is covered with a peeling tape. It is wound around a reel (not shown).

When the bare IC chip 10 is mounted, first, the protective tape is peeled off from the anisotropic conductive film 30 wound on the reel to expose one surface of the anisotropic conductive film 30 to a desired length. Then, the anisotropic conductive film 30 is placed on the component mounting surface 21 of the substrate 20 with the exposed one surface side facing the substrate 20, and the anisotropic conductive film 30 is pressed from the release tape side, The anisotropic conductive film 30 is temporarily bonded by heating (80 ° C., about 2 seconds). In this case, the anisotropic conductive film 30 is adhered to the place where the bare IC chip 10 is mounted so as to cover the wiring pattern 22 and the electrodes 23 of the substrate 20.
Considering the positional deviation of the anisotropic conductive film 30 with respect to 0, the area of the anisotropic conductive film 30 is set to be about twice the area of the predetermined surface 11 of the bare IC chip 10.

Next, the release tape of the anisotropic conductive film 30 adhered to the substrate 20 is peeled off, and the predetermined surface 11 of the bare IC chip 10 is set to face the other surface of the anisotropic conductive film 30. The bare IC chip 10 is placed on the anisotropic conductive film 30, and the anisotropic conductive film 30 is pressed and heated (180 ° C., 20 ° C.).
After about 2 seconds), the bare IC chip 10 is permanently bonded. Thus, the component mounting surface 21 of the substrate 20 and the predetermined surface 11 side of the bare IC chip 10 are separated from each other by the insulating resin 31 of the anisotropic conductive film 30.
Are joined through. Further, since the conductive particles 32 of the anisotropic conductive film 30 are pressed against the electrodes 23 of the substrate 20 by the bumps 13, the substrate 20 and the bare IC chip 10 are also electrically connected.

Next, in order to protect the bare IC chip 10, an insulating resin 40 is sealed on the anisotropic conductive film 30 so as to surround the bare IC chip 10. However, in this conventional mounting method, the anisotropic conductive film 30 cut to a desired length is placed on the component mounting surface 21 of the substrate 20 to perform temporary adhesion by thermocompression bonding, and then the release tape is peeled off. After that, the bare IC chip 10 is formed on the anisotropic conductive film 30.
It is necessary to carry out the main bonding by placing the substrate and thermocompression bonding, and the dedicated tool for thermocompression bonding for temporarily bonding the anisotropic conductive film 30 to the substrate 20 and the bare IC chip 10 are anisotropic conductive film. 2 with a dedicated tool for thermocompression bonding for full adhesion to 30
Bare IC chip 1
The number of man-hours required for mounting 0 was very large. In addition, an attempt to mount the bare IC chip 10 using an automatic machine requires a very large-scale device.

Further, the bare IC chip 1 is attached to the anisotropic conductive film 30 adhered to the substrate 20 by thermocompression bonding.
The bare IC chip 10 has a structure for performing thermocompression bonding of 0.
Is insufficiently bonded to the anisotropic conductive film 30, and
There is also a disadvantage that the insulating resin 40 must be sealed on the anisotropic conductive film 30 so as to surround the bare IC chip 10.

Furthermore, the area of the anisotropic conductive film 30 is about twice as large as the area of the predetermined surface 11 of the bare IC chip 10, and the anisotropic conductive film 30 is made of the insulating resin 40. Since it is covered with, it is difficult to mount other electronic components around the bare IC chip 10, and therefore, the electronic component mounting efficiency of the substrate is reduced.

[0011]

As described above, in the method of mounting a semiconductor device described above, the number of man-hours required for mounting the semiconductor device becomes very large, and it is difficult to mount the semiconductor device using an automatic machine. A large-scale device was needed.

In addition, there is a problem that the semiconductor device and the anisotropic conductive film are not sufficiently bonded to each other, and therefore the insulating resin must be sealed on the anisotropic conductive film so as to surround the semiconductor device. It was

Further, the area of the anisotropic conductive film is wider than the area of the semiconductor device, and since the anisotropic conductive film is covered with the insulating resin, other electrons are provided around the semiconductor device. There is also a problem that it is difficult to mount components, and thus the efficiency of mounting electronic components on the board is reduced.

The present invention has been made to solve the above-mentioned conventional drawbacks, and it is possible to reduce the number of work steps for mounting a semiconductor device, and to easily mount the semiconductor device by using an automatic machine. Another object of the present invention is to provide a method of mounting a semiconductor device, in which the area of the anisotropic conductive film can be set to be about the area of the semiconductor device and it is not necessary to cover the periphery of the semiconductor device with an insulating resin.

[0015]

The invention according to claim 1 is
A predetermined surface of the semiconductor device is bonded by heating the predetermined surface of the semiconductor device to the component mounting surface of the substrate with the anisotropic conductive film in which conductive particles are mixed in the insulating resin interposed. And the component mounting surface of the substrate with the insulating resin, the bump formed on the predetermined surface of the semiconductor device and the electrode formed on the component mounting surface of the substrate facing the bump, the conductive particles. In a method of mounting a semiconductor device electrically connected via a semiconductor device, in a first step, a predetermined surface of the semiconductor device is formed on one surface of an anisotropic conductive film having an area slightly larger than a predetermined surface of the semiconductor device. Of the anisotropic conductive film bonded to the semiconductor device in a second step by thermocompression bonding the surface side of the semiconductor device to the predetermined surface of the semiconductor device and the peripheral side surface of the predetermined surface side. The other surface side of the conductive film is the component part of the board. Wherein the thermocompression bonding to the surface.

According to the first aspect of the invention, since the semiconductor device is first thermocompression-bonded to the flexible anisotropic conductive film which is not thermocompression-bonded to the substrate, the anisotropic conductive film is formed. The semiconductor device can be reliably brought into close contact with the predetermined surface and the peripheral side surface on the predetermined surface side. Moreover, since the semiconductor device can be thermocompression bonded by positioning the anisotropic conductive film itself at a predetermined position, the semiconductor device can be accurately positioned at a predetermined position of the anisotropic conductive film. Further, in the first step, the semiconductor device may be thermocompression bonded to the anisotropic conductive film, and in the second step, the semiconductor device having the anisotropic conductive film bonded thereto may be thermocompression bonded to the substrate.
The number of man-hours is reduced, and these works can be performed only by the dedicated tool of the semiconductor device.

According to a second aspect of the present invention, in the first aspect of the present invention, the anisotropic conductive film has a plurality of regions each having a notch formed in an area slightly larger than a predetermined surface of the semiconductor device. One of the plurality of regions is bonded to a predetermined surface of the semiconductor device.

Therefore, by positioning a predetermined surface of the semiconductor device in a desired region of the anisotropic conductive film and thermocompressing the anisotropic conductive film, the desired region portion of the anisotropic conductive film is formed. Can be closely attached to the predetermined surface and the peripheral side surface on the predetermined surface side.

The invention according to claim 3 is the invention according to claim 2, characterized in that the anisotropic conductive film is formed on a release sheet. Therefore, when the predetermined surface of the semiconductor device is positioned in a desired region of the anisotropic conductive film and thermocompression-bonded to the anisotropic conductive film, only the desired region portion of the anisotropic conductive film is removed from the release sheet. It is peeled off and adheres to a predetermined surface of the semiconductor device and a peripheral side surface on the predetermined surface side.

A mounting structure of a semiconductor device according to claim 4 is
The predetermined surface of the semiconductor device and the peripheral side surface on the predetermined surface side are adhered to one surface of the anisotropic conductive film in which conductive particles are mixed in the insulating resin, and the other surface of the anisotropic conductive film The side is adhered to the component mounting surface of the substrate.

According to the invention of claim 4, since the anisotropic conductive film is adhered to the predetermined surface of the semiconductor device and the peripheral side surface on the predetermined surface side, the periphery of the semiconductor device is made of the insulating resin. No need to cover.

[0022]

FIG. 1 is a block diagram showing an embodiment of the present invention.
It will be described in detail with reference to FIGS. 1 is a diagram showing a state in which an anisotropic conductive film bonded to a semiconductor device is thermocompression bonded to a substrate, and FIG. 2 is a diagram showing a state in which a semiconductor device is thermocompression bonded to an anisotropic conductive film. FIG. 3 is a diagram showing a semiconductor device in which an anisotropic conductive film is bonded, FIG. 4 is a diagram showing a semiconductor device and a substrate bonded via an anisotropic conductive film, and FIG. 5 is a cut. 6 is a plan view of the anisotropic conductive film, FIG. 6 is a side view of the anisotropic conductive film of FIG. 5, and FIG. 7 is a mounting process diagram of the semiconductor device.

The substrate 50 according to the embodiment of the present invention is formed of glass epoxy resin or the like, and as shown in FIG. 1, the component mounting surface 51 on which the bare IC chip 60, which is a semiconductor device, is mounted is mounted. The plurality of wiring patterns 52 are formed of a conductive material. Further, the surface of the tip of each wiring pattern 52 is plated with gold to form an electrode 53,
Moreover, each wiring pattern 52 is covered with a solder resist 54 except for the electrode 53.

The bare IC chip 60 has a predetermined surface 61
a plurality of electrodes 62 formed of a conductive material such as
Bumps 63 are formed on the surface of each electrode 62. Bump 63 is Au
Alternatively, it is made of a metal material such as Sn—Pb alloy.

The anisotropic conductive film 70 used for mounting the bare IC chip 60 includes an insulating resin 71, conductive particles 7 and the like.
It is formed by mixing two. This anisotropic conductive film 70
As shown in FIGS. 5 and 6, has a sheet shape with a large area and is attached to the release sheet 73. Further, a cut 76 is formed in the anisotropic conductive film 70 from the upper surface (one surface) 74 to the lower surface (the other surface) 75, and the portion of the anisotropic conductive film 70 surrounded by the cut 76. 7
01 has the same shape as the predetermined surface 61 of the bare IC chip 60, and its area is slightly larger than the area of the predetermined surface 61 (about 1.05 times in this embodiment).

Next, the mounting process of the bare IC chip 60 will be described with reference to FIG. In the first step, the anisotropic conductive film 70 is transferred to the side of the bare IC chip 60 on which the bumps 63 are formed on the predetermined surface 61. In this step,
As shown in FIG. 2, the upper surface 64 side of the bare IC chip 60 is adsorbed by a dedicated heater chip 81 having a shape corresponding to the bare IC chip 60, the bare IC chip 60 is heated, and the bare IC chip 60 is positioned at a predetermined position. The heater chip 81 holding the bare IC chip 60 is positioned on the transfer portion 701 of the anisotropic conductive film 70. Then, the heater chip 81 is lowered to press the predetermined surface 61 side of the bare IC chip 60 against one surface 74 of the anisotropic conductive film 70 to pressurize and heat the anisotropic conductive film 70 (80 ° C., Then, the portion 701 of the anisotropic conductive film 70 is transferred to the bare IC chip 60.

In this case, the portion 70 of the anisotropic conductive film 70 is formed.
The area of 1 is only slightly larger than the area of the predetermined surface 61 of the bare IC chip 60, but the anisotropic conductive film 70 is accurately positioned at the predetermined position. The bare IC chip 60 does not protrude from the portion 701 of the conductive film 70. Further, since the bare IC chip 60 is first thermocompression-bonded to the highly flexible anisotropic conductive film 70 which is not thermocompression-bonded to the substrate 50, as shown in FIG. Securely adheres to the predetermined surface 61 of the bare IC chip 60 and the peripheral side surface 65 on the side of the predetermined surface 61. By raising the heater chip 81,
A portion 701 of the anisotropic conductive film 70 adhered to the bare IC chip 60 is peeled off from the peeling sheet 73.

In the second step, the bare IC chip 60 is used.
The other surface 75 of the anisotropic conductive film 70 adhered to the substrate 50 is adhered to the substrate 50. In this step, as shown in FIG. 1, the substrate 50 is set on the heater stage 82 and heated. Then, the heater chip 81 holding the bare IC chip 60 is positioned at a predetermined position on the substrate 50, the heater chip 81 is lowered, and the other surface 75 of the anisotropic conductive film 70 bonded to the bare IC chip 60 is placed. The board 50
Then, the anisotropic conductive film 70 is pressed and heated (180 ° C., about 20 seconds).

Then, as shown in FIG. 4, the component mounting surface 51 side of the substrate 50 and the predetermined surface 61 side of the bare IC chip 60 are bonded together via the insulating resin 71 of the anisotropic conductive film 70. It Further, since the conductive particles 72 of the anisotropic conductive film 70 are pressed against the electrodes 53 of the substrate 50 by the bumps 63, the substrate 5
0 and the bare IC chip 60 are also electrically connected. In this case, as described above, the anisotropic conductive film 70 is bare I.
The C chip 60 is firmly attached to the predetermined surface 61 and the peripheral side surface 65 on the side of the predetermined surface 61. Therefore, it is not necessary to seal the periphery of the bare IC chip 60 with an insulating resin. Also,
In the mounting method according to the present embodiment, the bare IC chip 60 is thermocompression-bonded to the portion 701 of the anisotropic conductive film 70 on the release sheet 73, and the bare IC chip 60 to which the anisotropic conductive film 70 is bonded is formed on the substrate. Since the bare IC chip 60 can be mounted on the substrate 50 with a simple operation of thermocompression bonding to the substrate 50 and with a small number of working steps, automation of this working process can be easily performed.

[0030]

As described above, according to the semiconductor device mounting method of the first aspect, the semiconductor device is thermocompression-bonded to the anisotropic conductive film in the first step, and anisotropic in the second step. It suffices to thermocompress the semiconductor device with the conductive conductive film adhered to the substrate, and since these operations can be performed only with the dedicated tool for the semiconductor device, it is possible to reduce the man-hours for mounting the semiconductor device. The semiconductor device can be easily mounted using an automatic machine. Further, since the semiconductor device can be accurately positioned on the anisotropic conductive film, the area of the anisotropic conductive film can be reduced to about the area of the semiconductor device. Therefore, by mounting the semiconductor device on the substrate, The electronic component mounting efficiency of does not decrease. Further, since the anisotropic conductive film surely adheres to the predetermined surface of the semiconductor device and the peripheral side surface on the predetermined surface side, it is not necessary to cover the periphery of the semiconductor device with another insulating resin.

According to a second aspect of the invention, in the invention according to the first aspect, the anisotropic conductive film has a plurality of regions each having a notch formed in an area slightly larger than a predetermined surface of the semiconductor device. The semiconductor device has a desired area portion of the anisotropic conductive film only by positioning a predetermined surface of the semiconductor device in a desired area of the anisotropic conductive film and thermocompressing the anisotropic conductive film. Since it can be closely attached to the predetermined surface and the peripheral side surface on the predetermined surface side, the workability of the first step is improved.

According to a third aspect of the invention, in the invention according to the second aspect, the anisotropic conductive film is formed on a release sheet, and a predetermined surface of the semiconductor device is provided with the anisotropic conductive film. When positioned in the area of and thermocompression bonded to the anisotropic conductive film,
Since only the desired region of the anisotropic conductive film is peeled off from the release sheet and adheres to the predetermined surface of the semiconductor device and the peripheral side surface of the predetermined surface side, the workability of the first step is further improved.

According to the invention of claim 4, since the anisotropic conductive film is adhered to the predetermined surface of the semiconductor device and the peripheral side surface of the predetermined surface side, the periphery of the semiconductor device is made of the insulating resin. No need to cover.

[Brief description of the drawings]

FIG. 1 is a diagram according to an embodiment of the present invention, showing a state in which an anisotropic conductive film bonded to a semiconductor device is thermocompression bonded to a substrate.

FIG. 2 is a diagram according to an embodiment of the present invention, showing a state in which a semiconductor device is thermocompression bonded to an anisotropic conductive film.

FIG. 3 is a diagram according to an embodiment of the present invention, showing a semiconductor device with an anisotropic conductive film bonded thereto.

FIG. 4 is a diagram according to an embodiment of the present invention, showing a semiconductor device and a substrate bonded to each other through an anisotropic conductive film.

FIG. 5 is a view according to the embodiment of the present invention, which is a plan view of an anisotropic conductive film in which a notch is formed.

6 is a side view of the anisotropic conductive film of FIG.

FIG. 7 is a mounting process diagram of the semiconductor device according to the embodiment of the present invention.

FIG. 8 is a view showing a conventional example of a semiconductor device and a substrate bonded via an anisotropic conductive film.

FIG. 9 is a mounting process diagram of a conventional semiconductor device.

[Explanation of symbols]

 50 substrate 51 component mounting surface 53 electrode 60 semiconductor device (bare IC chip) 61 predetermined surface 63 bump 65 peripheral side surface 70 anisotropic conductive film 71 insulating resin 72 conductive particles

Claims (4)

[Claims] 1. The semiconductor according to claim 1, wherein a predetermined surface of a semiconductor device is pressure-bonded to a component mounting surface of a substrate under heating with an anisotropic conductive film in which conductive particles are mixed in an insulating resin. A predetermined surface of the device and a component mounting surface of the substrate are joined with the insulating resin, and a bump formed on the predetermined surface of the semiconductor device and an electrode formed on the component mounting surface of the substrate facing the bump. In the method for mounting a semiconductor device, wherein is electrically connected to each other via the conductive particles, in the first step, one surface of the anisotropic conductive film having an area slightly larger than a predetermined surface of the semiconductor device is attached. The predetermined surface side of the semiconductor device is thermocompression bonded to bond the anisotropic conductive film to the predetermined surface of the semiconductor device and the peripheral side surface of the predetermined surface side, and
In the step, the other surface side of the anisotropic conductive film adhered to the semiconductor device is thermocompression-bonded to the component mounting surface of the substrate. 2. The anisotropic conductive film has a plurality of regions each having a notch formed in an area slightly larger than a predetermined surface of the semiconductor device, and one region portion of the plurality of regions is formed. The method for mounting a semiconductor device according to claim 1, wherein is bonded to a predetermined surface of the semiconductor device. 3. The method for mounting a semiconductor device according to claim 2, wherein the anisotropic conductive film is formed on a release sheet. 4. A predetermined surface of a semiconductor device and a peripheral side surface on the predetermined surface side are adhered to one surface of an anisotropic conductive film in which conductive particles are mixed in an insulating resin, and the anisotropic conductive film is formed. A mounting structure of a semiconductor device, wherein the other surface side of the film is adhered to a component mounting surface of a substrate.