JP2005230845A - Ultrasonic joining apparatus, and method for producing electronic device - Google Patents

Ultrasonic joining apparatus, and method for producing electronic device Download PDF

Info

Publication number
JP2005230845A
JP2005230845A JP2004041696A JP2004041696A JP2005230845A JP 2005230845 A JP2005230845 A JP 2005230845A JP 2004041696 A JP2004041696 A JP 2004041696A JP 2004041696 A JP2004041696 A JP 2004041696A JP 2005230845 A JP2005230845 A JP 2005230845A
Authority
JP
Japan
Prior art keywords
heater
ultrasonic
vibration
unit
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2004041696A
Other languages
Japanese (ja)
Inventor
Tomokazu Sakamoto
朝和 坂本
Takuya Oga
琢也 大賀
Toshihiro Iwasaki
俊寛 岩崎
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Renesas Technology Corp
Original Assignee
Renesas Technology Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Renesas Technology Corp filed Critical Renesas Technology Corp
Priority to JP2004041696A priority Critical patent/JP2005230845A/en
Publication of JP2005230845A publication Critical patent/JP2005230845A/en
Pending legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies
    • H01L24/75—Apparatus for connecting with bump connectors or layer connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73201—Location after the connecting process on the same surface
    • H01L2224/73203—Bump and layer connectors
    • H01L2224/73204—Bump and layer connectors the bump connector being embedded into the layer connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/75—Apparatus for connecting with bump connectors or layer connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/75—Apparatus for connecting with bump connectors or layer connectors
    • H01L2224/7525—Means for applying energy, e.g. heating means
    • H01L2224/75252—Means for applying energy, e.g. heating means in the upper part of the bonding apparatus, e.g. in the bonding head
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/8319—Arrangement of the layer connectors prior to mounting
    • H01L2224/83192—Arrangement of the layer connectors prior to mounting wherein the layer connectors are disposed only on another item or body to be connected to the semiconductor or solid-state body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01006—Carbon [C]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01033—Arsenic [As]

Abstract

<P>PROBLEM TO BE SOLVED: To provide an ultrasonic joining apparatus capable of sufficiently heating the object to be joined without exerting influence on ultrasonic vibration, and to provide a method for producing an electronic device. <P>SOLUTION: In the ultrasonic joining apparatus, ultrasonic vibration is applied to join a chip 12 and a substrate 9. The apparatus is provided with: a joining stage 8 to be mounted with the substrate 9; an ultrasonic vibrator 2 generating ultrasonic vibration; an ultrasonic horn 1 connected to ultrasonic vibrator 2 and transmitting ultrasonic vibration generated in the ultrasonic vibrator 2 to the chip 12; a heater 3 heating the ultrasonic horn 1; and a moving mechanism realizing a state where the ultrasonic horn 1 and the heater 3 are contacted and a state where the ultrasonic horn 1 and the heater 3 are separated. <P>COPYRIGHT: (C)2005,JPO&NCIPI

Description

本発明は、超音波接合装置および電子デバイスの製造方法に関し、特に、電子部品と基板とを接合する超音波接合装置および電子デバイスの製造方法に関する。   The present invention relates to an ultrasonic bonding apparatus and an electronic device manufacturing method, and more particularly to an ultrasonic bonding apparatus and an electronic device manufacturing method for bonding an electronic component and a substrate.

電子部品と基板とを接合するための装置として、超音波接合装置が従来から用いられている。   An ultrasonic bonding apparatus has been conventionally used as an apparatus for bonding an electronic component and a substrate.

たとえば特許第３０７８２３１号公報（従来例１）においては、超音波振動子の出力端に結合された共振器とこれに相対峙して配置された載荷台との一方または両方を互いに近づく方向に移動させ、それらの間で重ね合わせれた複数の被接合部材を加圧保持し、振動子から共振器に伝達された超音波振動により、複数の被接合部材を互いに接合する超音波接合装置であって、共振器を加熱するためのヒータを、該共振器の最小振幅点に配置したものが開示されている。   For example, in Japanese Patent No. 3078231 (conventional example 1), one or both of the resonator coupled to the output end of the ultrasonic transducer and the loading table disposed so as to face the resonator are moved in a direction approaching each other. An ultrasonic bonding apparatus that pressurizes and holds a plurality of members to be bonded between them and bonds the members to be bonded to each other by ultrasonic vibration transmitted from a vibrator to a resonator. A heater in which a heater for heating the resonator is arranged at the minimum amplitude point of the resonator is disclosed.

また、特開２００３−２８２６４４号公報（従来例２）においては、超音波振動発生手段と、該超音波振動発生手段と結合された共振体と、共振体に埋設されたヒータ（加熱手段）とを備えた超音波ヘッドが開示されている。   In JP 2003-282644 A (conventional example 2), an ultrasonic vibration generating means, a resonator coupled to the ultrasonic vibration generating means, and a heater (heating means) embedded in the resonator. An ultrasonic head comprising:

また、特開２００３−１４５２８２号公報（従来例３）においては、超音波発振子と、該超音波発振子に接続された超音波ホーンと、超音波ホーンに取付けられたヒータと、超音波ホーンを冷却する冷却部とを備えた超音波接合装置が開示されている。   In JP 2003-145282 A (conventional example 3), an ultrasonic oscillator, an ultrasonic horn connected to the ultrasonic oscillator, a heater attached to the ultrasonic horn, and an ultrasonic horn An ultrasonic bonding apparatus including a cooling unit that cools the liquid is disclosed.

さらに、特開平９−１６８８７６号公報（従来例４）においては、超音波ホーンと対向するアンビル（ベース）にヒータを挿入し、該ヒータによりアンビルを加熱し、加熱されたアンビルの熱を被接合物に伝達するようにした超音波接合装置が開示されている。
特許第３０７８２３１号公報 特開２００３−２８２６４４号公報 特開２００３−１４５２８２号公報 特開平９−１６８８７６号公報 Furthermore, in JP-A-9-168876 (conventional example 4), a heater is inserted into an anvil (base) facing the ultrasonic horn, the anvil is heated by the heater, and the heat of the heated anvil is joined. An ultrasonic bonding apparatus adapted to transmit to an object is disclosed.
Japanese Patent No. 3078231 JP 2003-282644 A JP 2003-145282 A JP-A-9-168876

しかしながら、上記のような超音波接合装置においては、以下のような問題があった。   However, the ultrasonic bonding apparatus as described above has the following problems.

従来例１〜３に示すように、超音波振動を伝達するための伝達部材にヒータを取付けて超音波振動による接合を行なう場合、伝達部材に取付けられたヒータによる超音波振動への影響を完全に排除することができない。また、ヒータと伝達部材とを非接触の状態にして加熱する場合、加熱効率が低下するという問題がある。   As shown in Conventional Examples 1 to 3, when a heater is attached to a transmission member for transmitting ultrasonic vibration and joining by ultrasonic vibration is performed, the influence on the ultrasonic vibration by the heater attached to the transmission member is completely eliminated. Can not be excluded. Further, when heating the heater and the transmission member in a non-contact state, there is a problem that the heating efficiency is lowered.

また、従来例４に示すように、ベース側のみにヒータを設けた場合、伝達部材（超音波ホーンなど）側の加熱が不十分となる場合がある。この結果、被接合部材を接合する際に、固定樹脂などの接合部材の粘度が変化し、接合条件が安定しにくいという問題がある。   Moreover, as shown in Conventional Example 4, when a heater is provided only on the base side, heating on the transmission member (such as an ultrasonic horn) side may be insufficient. As a result, when the members to be joined are joined, there is a problem that the viscosity of the joining member such as the fixing resin changes, and the joining conditions are difficult to stabilize.

本発明は、上記のような問題に鑑みてなされたものであり、本発明の目的は、超音波振動に影響を与えることなく被接合物を十分に加熱することができる超音波接合装置および電子デバイスの製造方法を提供することにある。   The present invention has been made in view of the above problems, and an object of the present invention is to provide an ultrasonic bonding apparatus and an electronic device capable of sufficiently heating an object to be bonded without affecting ultrasonic vibration. It is to provide a device manufacturing method.

本発明に係る超音波接合装置は、超音波振動を加えて電子部品と基板とを接合する超音波接合装置であって、基板が載置されるテーブルと、超音波振動を発生させる発振部と、発振部に接続され、発振部において発生した超音波振動を電子部品に伝達する振動伝達部と、振動伝達部を加熱するヒータと、振動伝達部とヒータとが接する状態と振動伝達部とヒータとが離間した状態とを実現する移動機構とを備える。   An ultrasonic bonding apparatus according to the present invention is an ultrasonic bonding apparatus that applies ultrasonic vibration to bond an electronic component and a substrate, and includes a table on which the substrate is placed, an oscillation unit that generates ultrasonic vibration, The vibration transmitting unit connected to the oscillating unit and transmitting ultrasonic vibration generated in the oscillating unit to the electronic component, the heater for heating the vibration transmitting unit, the state in which the vibration transmitting unit and the heater are in contact, the vibration transmitting unit and the heater And a moving mechanism that realizes a separated state.

本発明に係る電子デバイスの製造方法は、電子部品と基板とを有する電子デバイスの製造方法であって、基板をテーブル上に載置する工程と、超音波発振部からの超音波振動を電子部品に伝達する振動伝達部で電子部品を保持する工程と、電子部品を保持した振動伝達部をヒータにより加熱する工程と、振動伝達部とヒータとを離間させる工程と、振動伝達部とヒータとを離間させた後に、電子部品に伝達された超音波振動により電子部品と基板とを接合する工程とを備える。   An electronic device manufacturing method according to the present invention is an electronic device manufacturing method having an electronic component and a substrate, the step of placing the substrate on a table, and ultrasonic vibration from an ultrasonic oscillation unit. A step of holding the electronic component by the vibration transmission unit transmitting to the step, a step of heating the vibration transmission unit holding the electronic component by the heater, a step of separating the vibration transmission unit and the heater, and the vibration transmission unit and the heater. A step of joining the electronic component and the substrate by ultrasonic vibration transmitted to the electronic component after the separation.

本発明によれば、超音波振動を加えて電子部品と基板とを接合する超音波接合において、超音波振動に影響を与えることなく被接合物を十分に加熱することができる。   ADVANTAGE OF THE INVENTION According to this invention, in the ultrasonic bonding which joins an electronic component and a board | substrate by applying ultrasonic vibration, a to-be-joined object can fully be heated, without affecting ultrasonic vibration.

以下に、本発明に基づく超音波接合装置および電子デバイスの製造方法の実施の形態について、図１から図１１を用いて説明する。   Embodiments of an ultrasonic bonding apparatus and an electronic device manufacturing method according to the present invention will be described below with reference to FIGS.

（実施の形態１）
図１，図２は、実施の形態１に係る超音波接合装置を示した図である。 (Embodiment 1)
1 and 2 are diagrams showing an ultrasonic bonding apparatus according to the first embodiment.

本実施の形態に係る超音波接合装置は、超音波振動を加えてチップ１２（電子部品）と基板９とを接合する超音波接合装置であって、図１に示すように、基板９が載置される接合ステージ８（テーブル）と、超音波振動を発生させる超音波振動子２（発振部）と、超音波振動子２に接続され、超音波振動子２において発生した超音波振動をチップ１２に伝達する超音波ホーン１（振動伝達部）と、超音波ホーン１を加熱するヒータ３と、超音波ホーン１とヒータ３とが接する状態と、超音波ホーン１とヒータ３とが離間した状態とを実現する移動機構とを備える。   The ultrasonic bonding apparatus according to the present embodiment is an ultrasonic bonding apparatus that applies ultrasonic vibration to bond the chip 12 (electronic component) and the substrate 9, and the substrate 9 is mounted as shown in FIG. 1. The joining stage 8 (table) to be placed, the ultrasonic vibrator 2 (oscillator) for generating ultrasonic vibration, and the ultrasonic vibration generated in the ultrasonic vibrator 2 connected to the ultrasonic vibrator 2 are chipped. 12, the ultrasonic horn 1 (vibration transmission part) which transmits to 12, the heater 3 which heats the ultrasonic horn 1, the state where the ultrasonic horn 1 and the heater 3 are in contact, and the ultrasonic horn 1 and the heater 3 are separated from each other. And a moving mechanism for realizing the state.

移動機構は、ヒータ３を超音波ホーン１に接する位置から超音波ホーン１と離間する位置に移動させるヒータ移動手段４と、電子部品１２をそれぞれθ方向（Ｚ軸まわりの回転方向）、Ｚ軸方向、ＸＹ平面方向に移動させるθ方向移動手段５、Ｚ方向移動手段６、ＸＹ方向移動手段７とを有する。   The moving mechanism includes a heater moving means 4 that moves the heater 3 from a position in contact with the ultrasonic horn 1 to a position that is separated from the ultrasonic horn 1, and the electronic component 12 in the θ direction (rotating direction around the Z axis) and the Z axis, respectively. Direction moving means 5 for moving in the XY plane direction, Z direction moving means 6, and XY direction moving means 7.

接合ステージ８は、ベース１４上に設けられる。接合ステージ８上に被接合物である基板９が載置される。接合ステージ８には加熱手段（図示せず）が設けられ、基板９および基板９上の固定樹脂１１を加熱している。   The joining stage 8 is provided on the base 14. A substrate 9, which is an object to be bonded, is placed on the bonding stage 8. The joining stage 8 is provided with heating means (not shown) to heat the substrate 9 and the fixing resin 11 on the substrate 9.

ベース１４Ａ上にはＸＹ方向移動手段７が設けられ、ＸＹ方向移動手段７から支柱１６が立ち上がる。支柱１６の先端側にはＺ方向移動手段６が設けられ、Ｚ方向移動手段６から支柱１６と交差する方向にアーム１７が立ち上がる。アーム１７の先端側にはθ方向移動手段５を介してブラケット１５が取り付けられる。ブラケット１５の一端側にはヒータ移動手段４を介してヒータ３が取付けられ、ブラケット１５の他端側には超音波振動子２が取付けられる。すなわち、ヒータ３は、ヒータ移動手段４を介して超音波振動子２に接続されている。   An XY direction moving means 7 is provided on the base 14 </ b> A, and the support column 16 rises from the XY direction moving means 7. The Z direction moving means 6 is provided at the tip end side of the column 16, and the arm 17 rises from the Z direction moving unit 6 in a direction intersecting the column 16. A bracket 15 is attached to the distal end side of the arm 17 via the θ-direction moving means 5. The heater 3 is attached to one end side of the bracket 15 via the heater moving means 4, and the ultrasonic transducer 2 is attached to the other end side of the bracket 15. That is, the heater 3 is connected to the ultrasonic transducer 2 via the heater moving means 4.

被接続物であるチップ１２は、超音波ホーン１に保持される。超音波ホーン１は、超音波振動子２に接続されており、超音波振動子２において発生した超音波振動をチップ１２に伝達する。   The chip 12 that is a connected object is held by the ultrasonic horn 1. The ultrasonic horn 1 is connected to the ultrasonic vibrator 2 and transmits the ultrasonic vibration generated in the ultrasonic vibrator 2 to the chip 12.

上記の移動手段の動作について、超音波接合の手順と併せて以下に説明する。   The operation of the moving means will be described below together with the procedure of ultrasonic bonding.

図１を参照して、ヒータ３は超音波ホーン１に接触しており、ヒータ３によって超音波ホーン１が加熱される。この状態で、θ方向移動手段５およびＸＹ方向移動手段７を作動させ、チップ１２の電極１３と基板９上の電極１０との位置合わせを行なう。   Referring to FIG. 1, heater 3 is in contact with ultrasonic horn 1, and ultrasonic horn 1 is heated by heater 3. In this state, the θ-direction moving means 5 and the XY-direction moving means 7 are operated to align the electrode 13 on the chip 12 with the electrode 10 on the substrate 9.

図１の状態から、Ｚ方向移動手段６によって超音波ホーン１を下降させ、図２に示すように、固定樹脂１１を介して基板９とチップ１２とを接続、加圧する。この際、ヒータ移動手段４を作動させ、ヒータ３を超音波ホーン１から離間させる。   From the state of FIG. 1, the ultrasonic horn 1 is lowered by the Z-direction moving means 6, and the substrate 9 and the chip 12 are connected and pressurized via the fixing resin 11 as shown in FIG. 2. At this time, the heater moving means 4 is operated to separate the heater 3 from the ultrasonic horn 1.

この状態で、超音波振動子２を作動させ、超音波ホーン１を超音波振動させる。以上の工程の実施により、電極１０，１３が互いに接続され、基板９とチップ１２とを有する電子デバイスが作製される。   In this state, the ultrasonic vibrator 2 is operated and the ultrasonic horn 1 is ultrasonically vibrated. By performing the above steps, the electrodes 10 and 13 are connected to each other, and an electronic device having the substrate 9 and the chip 12 is manufactured.

本実施の形態に係る電子デバイスの製造方法について要約すると、以下のようになる。本実施の形態に係る電子デバイスの製造方法は、基板９を接合ステージ８（テーブル）上に載置する工程と、超音波振動子２（超音波発振部）からの超音波振動をチップ１２（電子部品）に伝達する超音波ホーン１（振動伝達部）でチップ１２を保持する工程と、チップ１２を保持した超音波ホーン１をヒータ３により加熱する工程と、超音波ホーン１とヒータ３とを離間させる工程と、超音波ホーン１とヒータ３とを離間させた後に、チップ１２に伝達された超音波振動によりチップ１２と基板９とを電気的に接続（接合）する工程とを備える。   A summary of the electronic device manufacturing method according to the present embodiment is as follows. In the method of manufacturing an electronic device according to the present embodiment, the step of placing the substrate 9 on the bonding stage 8 (table) and the ultrasonic vibration from the ultrasonic vibrator 2 (ultrasonic oscillator) are performed on the chip 12 ( A step of holding the chip 12 by the ultrasonic horn 1 (vibration transmission unit) that transmits to the electronic component, a step of heating the ultrasonic horn 1 holding the chip 12 by the heater 3, the ultrasonic horn 1 and the heater 3, And a step of electrically connecting (bonding) the chip 12 and the substrate 9 by ultrasonic vibration transmitted to the chip 12 after the ultrasonic horn 1 and the heater 3 are separated from each other.

本実施の形態においては、ヒータ３により超音波ホーン１を加熱することで、チップ１２が加熱されるので、チップ１２と固定樹脂１１とが接触した際に、固定樹脂１１の温度および粘度が変化するのを抑制することができる。また、超音波振動によりチップ１２と基板９と接合する際に超音波ホーン１とヒータ３とを離間させることで、ヒータ３による超音波振動への影響を抑制することができる。以上により、安定した接合条件を実現することができる。   In this embodiment, since the chip 12 is heated by heating the ultrasonic horn 1 with the heater 3, the temperature and viscosity of the fixed resin 11 change when the chip 12 and the fixed resin 11 come into contact with each other. Can be suppressed. Moreover, when the chip | tip 12 and the board | substrate 9 are joined by ultrasonic vibration, the influence on the ultrasonic vibration by the heater 3 can be suppressed by separating the ultrasonic horn 1 and the heater 3 from each other. As described above, stable bonding conditions can be realized.

（実施の形態２）
図３，図４は、実施の形態２に係る超音波接合装置を示した図である。なお、図３は、ヒータ３により超音波ホーン１を加熱している状態を示す図であり、図４は、ヒータ３を超音波ホーン１から離間させた後に、超音波振動によりチップ１２と基板９とを接合している状態を示す図である。 (Embodiment 2)
3 and 4 are diagrams showing an ultrasonic bonding apparatus according to the second embodiment. 3 is a diagram showing a state in which the ultrasonic horn 1 is heated by the heater 3, and FIG. 4 is a diagram in which the heater 12 is separated from the ultrasonic horn 1 and then the chip 12 and the substrate are subjected to ultrasonic vibration. 9 is a diagram showing a state in which 9 is joined.

本実施の形態に係る超音波接合装置は、実施の形態１に係る超音波接合装置の変形例であって、図３，図４に示すように、ベース１４Ｂ上にθ方向移動手段５とＸＹ方向移動手段７とを設けた点で、実施の形態１と異なる。   The ultrasonic bonding apparatus according to the present embodiment is a modification of the ultrasonic bonding apparatus according to the first embodiment. As shown in FIGS. 3 and 4, the θ-direction moving means 5 and the XY are placed on the base 14B. The difference from the first embodiment is that the direction moving means 7 is provided.

本実施の形態においては、ベース１４から支柱１６が立ち上がる。支柱１６の先端側にはＺ方向移動手段６が設けられ、Ｚ方向移動手段６から支柱１６と交差する方向にアーム１７が立ち上がる。アーム１７の先端側にはブラケット１５が取り付けられる。ブラケット１５の一端側にはヒータ移動手段４を介してヒータ３が取付けられ、ブラケット１５の他端側には超音波振動子２が取付けられる。すなわち、ヒータ３は、ヒータ移動手段４を介して超音波振動子２に接続されている。   In this embodiment, the support column 16 rises from the base 14. The Z direction moving means 6 is provided at the tip end side of the column 16, and the arm 17 rises from the Z direction moving unit 6 in a direction intersecting the column 16. A bracket 15 is attached to the distal end side of the arm 17. The heater 3 is attached to one end side of the bracket 15 via the heater moving means 4, and the ultrasonic transducer 2 is attached to the other end side of the bracket 15. That is, the heater 3 is connected to the ultrasonic transducer 2 via the heater moving means 4.

以上の構成により、実施の形態１と同様の移動機構を実現することができる。したがって、本実施の形態においても、実施の形態１と同様の効果を奏する。   With the above configuration, a moving mechanism similar to that of the first embodiment can be realized. Therefore, the present embodiment has the same effect as the first embodiment.

なお、本実施の形態において、実施の形態１と同様の事項については、詳細な説明は繰り返さない。   In the present embodiment, detailed description of the same matters as in the first embodiment will not be repeated.

（実施の形態３）
図５，図６は、実施の形態３に係る超音波接合装置を示した図である。なお、図５は、ヒータ３により超音波ホーン１を加熱している状態を示す図であり、図６は、ヒータ３を超音波ホーン１から離間させた後に、超音波振動によりチップ１２と基板９とを接合している状態を示す図である。 (Embodiment 3)
5 and 6 are diagrams showing an ultrasonic bonding apparatus according to the third embodiment. 5 is a diagram showing a state in which the ultrasonic horn 1 is heated by the heater 3, and FIG. 6 is a diagram illustrating a state where the heater 3 is separated from the ultrasonic horn 1 and then the chip 12 and the substrate by ultrasonic vibration. 9 is a diagram showing a state in which 9 is joined.

本実施の形態に係る超音波接合装置は、上述した各実施の形態に係る超音波接合装置の変形例であって、図５，図６に示すように、ヒータ３をベース１４に接続して固定した点で、上述した各実施の形態と異なる。   The ultrasonic bonding apparatus according to the present embodiment is a modification of the ultrasonic bonding apparatus according to each of the above-described embodiments, and includes a heater 3 connected to a base 14 as shown in FIGS. It differs from the above-described embodiments in that it is fixed.

本実施の形態においては、ベース１４Ａ上にＸＹ方向移動手段７が設けられ、ＸＹ方向移動手段７から支柱１６が立ち上がる。支柱１６の先端側にはＺ方向移動手段６が設けられ、Ｚ方向移動手段６から支柱１６と交差する方向にアーム１７が立ち上がる。アーム１７の先端側にはθ方向移動手段５を介してブラケット１５が取り付けられる。ブラケット１５には超音波振動子２が取付けられる。また、ヒータ３は、ベース１４に接続されている。   In the present embodiment, the XY direction moving means 7 is provided on the base 14 </ b> A, and the column 16 rises from the XY direction moving means 7. The Z direction moving means 6 is provided at the tip end side of the column 16, and the arm 17 rises from the Z direction moving unit 6 in a direction intersecting the column 16. A bracket 15 is attached to the distal end side of the arm 17 via the θ-direction moving means 5. The ultrasonic transducer 2 is attached to the bracket 15. The heater 3 is connected to the base 14.

図５を参照して、超音波ホーン１はヒータ３と接触し、ヒータ３により超音波ホーン１が加熱されている。この状態から、θ方向移動手段５およびＸＹ方向移動手段７を作動させ、固定樹脂１１を介して基板９とチップ１２とを接続、加圧する。この際、ヒータ３は固定されているので、超音波ホーン１とヒータ３とが離間する。   Referring to FIG. 5, ultrasonic horn 1 is in contact with heater 3, and ultrasonic horn 1 is heated by heater 3. From this state, the θ direction moving means 5 and the XY direction moving means 7 are operated to connect and pressurize the substrate 9 and the chip 12 via the fixing resin 11. At this time, since the heater 3 is fixed, the ultrasonic horn 1 and the heater 3 are separated from each other.

以上の構成により、上述した各実施の形態と同様の移動機構を実現することができる。したがって、本実施の形態においても、上述した各実施の形態と同様の効果を奏する。   With the above configuration, a moving mechanism similar to that of each of the above-described embodiments can be realized. Therefore, also in this embodiment, the same effects as those of the above-described embodiments can be obtained.

なお、本実施の形態において、上述した各実施の形態と同様の事項については、詳細な説明は繰り返さない。   In the present embodiment, detailed description of the same matters as those of the above-described embodiments will not be repeated.

（実施の形態４）
図７，図８は、実施の形態４に係る超音波接合装置を示した図である。なお、図７は、ヒータ３により超音波ホーン１を加熱している状態を示す図であり、図８は、ヒータ３を超音波ホーン１から離間させた後に、超音波振動によりチップ１２と基板９とを接合している状態を示す図である。 (Embodiment 4)
7 and 8 are diagrams showing an ultrasonic bonding apparatus according to the fourth embodiment. 7 is a diagram showing a state in which the ultrasonic horn 1 is heated by the heater 3, and FIG. 8 is a diagram in which the heater 12 is separated from the ultrasonic horn 1 and then the chip 12 and the substrate are subjected to ultrasonic vibration. 9 is a diagram showing a state in which 9 is joined.

本実施の形態に係る超音波接合装置は、上述した各実施の形態に係る超音波接合装置の変形例であって、図７，図８に示すように、ヒータ３をベース１４Ｂ上のＸＹ方向移動手段７に接続した点で、上述した各実施の形態と異なる。   The ultrasonic bonding apparatus according to the present embodiment is a modification of the ultrasonic bonding apparatus according to each of the above-described embodiments. As shown in FIGS. 7 and 8, the heater 3 is placed in the XY directions on the base 14B. It is different from the above-described embodiments in that it is connected to the moving means 7.

本実施の形態においては、ベース１４から支柱１６が立ち上がる。支柱１６の先端側にはＺ方向移動手段６が設けられ、Ｚ方向移動手段６から支柱１６と交差する方向にアーム１７が立ち上がる。アーム１７の先端側にはブラケット１５が取り付けられる。ブラケット１５には超音波振動子２が取付けられる。ベース１４Ｂ上にはＸＹ方向移動手段７およびθ方向移動手段５が設けられる。さらに、θ方向移動手段５上に接合ステージ８が設けられる。また、ヒータ３は、ＸＹ方向移動手段７を介してベース１４Ｂに接続されている。   In this embodiment, the support column 16 rises from the base 14. The Z direction moving means 6 is provided at the tip end side of the column 16, and the arm 17 rises from the Z direction moving unit 6 in a direction intersecting the column 16. A bracket 15 is attached to the distal end side of the arm 17. The ultrasonic transducer 2 is attached to the bracket 15. An XY direction moving means 7 and a θ direction moving means 5 are provided on the base 14B. Further, a joining stage 8 is provided on the θ direction moving means 5. The heater 3 is connected to the base 14 </ b> B via the XY direction moving means 7.

図７を参照して、超音波ホーン１はヒータ３と接触し、ヒータ３により超音波ホーン１が加熱されている。この状態から、θ方向移動手段５およびＸＹ方向移動手段７を作動させ、固定樹脂１１を介して基板９とチップ１２とを接続、加圧する。この際、超音波ホーン１はＸＹ平面方向には移動しないが、ヒータ３は接合ステージ８と連動してＸＹ平面方向に移動する。すなわち、本実施の形態においては、ＸＹ方向移動手段７がヒータ移動手段としても機能している。この結果、超音波ホーン１とヒータ３とが離間する。   Referring to FIG. 7, ultrasonic horn 1 is in contact with heater 3, and ultrasonic horn 1 is heated by heater 3. From this state, the θ direction moving means 5 and the XY direction moving means 7 are operated to connect and pressurize the substrate 9 and the chip 12 via the fixing resin 11. At this time, the ultrasonic horn 1 does not move in the XY plane direction, but the heater 3 moves in the XY plane direction in conjunction with the bonding stage 8. That is, in the present embodiment, the XY direction moving unit 7 also functions as a heater moving unit. As a result, the ultrasonic horn 1 and the heater 3 are separated from each other.

以上の構成により、上述した各実施の形態と同様の移動機構を実現することができる。したがって、本実施の形態においても、上述した各実施の形態と同様の効果を奏する。   With the above configuration, a moving mechanism similar to that of each of the above-described embodiments can be realized. Therefore, also in this embodiment, the same effects as those of the above-described embodiments can be obtained.

なお、本実施の形態において、上述した各実施の形態と同様の事項については、詳細な説明は繰り返さない。   In the present embodiment, detailed description of the same matters as those of the above-described embodiments will not be repeated.

（実施の形態５）
図９，図１０は、実施の形態５に係る超音波接合装置を示した図である。なお、図９は、ヒータ３により超音波ホーン１を加熱している状態を示す図であり、図１０は、ヒータ３を超音波ホーン１から離間させた後に、超音波振動によりチップ１２と基板９とを接合している状態を示す図である。 (Embodiment 5)
9 and 10 are diagrams showing an ultrasonic bonding apparatus according to the fifth embodiment. 9 is a diagram showing a state in which the ultrasonic horn 1 is heated by the heater 3, and FIG. 10 is a diagram in which the heater 12 is separated from the ultrasonic horn 1 and then the chip 12 and the substrate are subjected to ultrasonic vibration. 9 is a diagram showing a state in which 9 is joined.

本実施の形態に係る超音波接合装置は、上述した各実施の形態に係る超音波接合装置の変形例であって、図９，図１０に示すように、ヒータ３をヒータ移動手段４を介してベース１４に接続した点で、上述した各実施の形態と異なる。   The ultrasonic bonding apparatus according to the present embodiment is a modification of the ultrasonic bonding apparatus according to each of the above-described embodiments. As shown in FIGS. 9 and 10, the heater 3 is connected via the heater moving means 4. The point of connection to the base 14 is different from the above-described embodiments.

本実施の形態においては、ベース１４から支柱１６が立ち上がる。支柱１６の先端側にはＺ方向移動手段６が設けられ、Ｚ方向移動手段６から支柱１６と交差する方向にアーム１７が立ち上がる。アーム１７の先端側にはブラケット１５が取り付けられる。ブラケット１５には超音波振動子２が取付けられる。ベース１４Ｂ上にはＸＹ方向移動手段７およびθ方向移動手段５が設けられる。さらに、θ方向移動手段５上に接合ステージ８が設けられる。また、ヒータ３は、ヒータ移動手段４を介してベース１４に接続されている。   In this embodiment, the support column 16 rises from the base 14. The Z direction moving means 6 is provided at the tip end side of the column 16, and the arm 17 rises from the Z direction moving unit 6 in a direction intersecting the column 16. A bracket 15 is attached to the distal end side of the arm 17. The ultrasonic transducer 2 is attached to the bracket 15. An XY direction moving means 7 and a θ direction moving means 5 are provided on the base 14B. Further, a joining stage 8 is provided on the θ direction moving means 5. The heater 3 is connected to the base 14 via the heater moving means 4.

図９を参照して、超音波ホーン１はヒータ３と接触し、ヒータ３により超音波ホーン１が加熱されている。この状態から、θ方向移動手段５およびＸＹ方向移動手段７を作動させ、固定樹脂１１を介して基板９とチップ１２とを接続、加圧する。この際、ヒータ移動手段４を作動させ、ヒータ３を超音波ホーン１から離間させる。   Referring to FIG. 9, ultrasonic horn 1 is in contact with heater 3, and ultrasonic horn 1 is heated by heater 3. From this state, the θ direction moving means 5 and the XY direction moving means 7 are operated to connect and pressurize the substrate 9 and the chip 12 via the fixing resin 11. At this time, the heater moving means 4 is operated to separate the heater 3 from the ultrasonic horn 1.

以上の構成により、上述した各実施の形態と同様の移動機構を実現することができる。したがって、本実施の形態においても、上述した各実施の形態と同様の効果を奏する。   With the above configuration, a moving mechanism similar to that of each of the above-described embodiments can be realized. Therefore, also in this embodiment, the same effects as those of the above-described embodiments can be obtained.

なお、本実施の形態において、上述した各実施の形態と同様の事項については、詳細な説明は繰り返さない。   In the present embodiment, detailed description of the same matters as those of the above-described embodiments will not be repeated.

（実施の形態６）
図１１は、実施の形態６に係る超音波接合装置における超音波ホーンとヒータとの接触部を示した図である。 (Embodiment 6)
FIG. 11 is a diagram showing a contact portion between the ultrasonic horn and the heater in the ultrasonic bonding apparatus according to the sixth embodiment.

本実施の形態に係る超音波接合装置は、図１１に示すように、ヒータ３と超音波ホーン１との間に、空気よりも熱伝導率が大きく、ヒータ３および超音波ホーン１よりも硬度が小さいシート１８（伝熱部）を備える。   As shown in FIG. 11, the ultrasonic bonding apparatus according to the present embodiment has a thermal conductivity higher than that of air between the heater 3 and the ultrasonic horn 1, and has a hardness higher than that of the heater 3 and the ultrasonic horn 1. Is provided with a small sheet 18 (heat transfer section).

シート１８に用いる素材としては、たとえばシリコンを含むものなどが考えられる。   As a material used for the sheet 18, for example, a material containing silicon can be considered.

なお、シート１８は、上述した各実施の形態に係る超音波接合装置において、すべて適用可能である。図１１においては、図示および説明の便宜上、超音波ホーン１およびヒータ３以外の構成の図示は行なわない。   The sheet 18 can be applied to all the ultrasonic bonding apparatuses according to the above-described embodiments. In FIG. 11, for convenience of illustration and description, the configuration other than the ultrasonic horn 1 and the heater 3 is not illustrated.

上述したシート１８を設けることで、超音波ホーン１とヒータ３とを接触させた際に、それらの間に生じる空隙の大きさを小さくすることができる。したがって、超音波ホーン１とヒータ３との間の接触熱抵抗を低減することができ、ヒータ３による超音波ホーン１の加熱を効率よく行なうことができる。この結果、加熱に要する時間を短縮することなどが可能となる。   By providing the sheet 18 described above, when the ultrasonic horn 1 and the heater 3 are brought into contact with each other, the size of the gap generated between them can be reduced. Therefore, the contact thermal resistance between the ultrasonic horn 1 and the heater 3 can be reduced, and the ultrasonic horn 1 can be efficiently heated by the heater 3. As a result, the time required for heating can be shortened.

なお、本実施の形態において、上述した各実施の形態と同様の事項については、詳細な説明は繰り返さない。   In the present embodiment, detailed description of the same matters as those of the above-described embodiments will not be repeated.

以上、本発明の実施の形態について説明したが、上述した各実施の形態の特徴部分を適宜組み合わせることは、当初から予定されている。また、今回開示された実施の形態は全ての点で例示であって制限的なものではないと考えられるべきである。本発明の範囲は特許請求の範囲によって示され、特許請求の範囲と均等の意味および範囲内での全ての変更が含まれることが意図される。   Although the embodiments of the present invention have been described above, it is planned from the beginning to appropriately combine the characteristic portions of the above-described embodiments. Moreover, it should be thought that embodiment disclosed this time is an illustration and restrictive at no points. The scope of the present invention is defined by the terms of the claims, and is intended to include any modifications within the scope and meaning equivalent to the terms of the claims.

本発明の実施の形態１に係る超音波接合装置を示した図である。It is the figure which showed the ultrasonic bonding apparatus which concerns on Embodiment 1 of this invention. 図１に示す超音波接合装置を用いて電子部品と基板とを接合する工程を示した図である。It is the figure which showed the process of joining an electronic component and a board | substrate using the ultrasonic bonding apparatus shown in FIG. 本発明の実施の形態２に係る超音波接合装置を示した図である。It is the figure which showed the ultrasonic bonding apparatus which concerns on Embodiment 2 of this invention. 図３に示す超音波接合装置を用いて電子部品と基板とを接合する工程を示した図である。It is the figure which showed the process of joining an electronic component and a board | substrate using the ultrasonic bonding apparatus shown in FIG. 本発明の実施の形態３に係る超音波接合装置を示した図である。It is the figure which showed the ultrasonic bonding apparatus which concerns on Embodiment 3 of this invention. 図５に示す超音波接合装置を用いて電子部品と基板とを接合する工程を示した図である。It is the figure which showed the process of joining an electronic component and a board | substrate using the ultrasonic bonding apparatus shown in FIG. 本発明の実施の形態４に係る超音波接合装置を示した図である。It is the figure which showed the ultrasonic bonding apparatus which concerns on Embodiment 4 of this invention. 図７に示す超音波接合装置を用いて電子部品と基板とを接合する工程を示した図である。It is the figure which showed the process of joining an electronic component and a board | substrate using the ultrasonic bonding apparatus shown in FIG. 本発明の実施の形態５に係る超音波接合装置を示した図である。It is the figure which showed the ultrasonic bonding apparatus which concerns on Embodiment 5 of this invention. 図９に示す超音波接合装置を用いて電子部品と基板とを接合する工程を示した図である。It is the figure which showed the process of joining an electronic component and a board | substrate using the ultrasonic bonding apparatus shown in FIG. 本発明の実施の形態６に係る超音波接合装置における超音波ホーンとヒータとの接触部を示した図である。It is the figure which showed the contact part of the ultrasonic horn and heater in the ultrasonic bonding apparatus which concerns on Embodiment 6 of this invention.

符号の説明Explanation of symbols

１ 超音波ホーン、２ 超音波振動子、３ ヒータ、４ ヒータ移動手段、５ θ方向移動手段、６ Ｚ方向移動手段、７ ＸＹ方向移動手段、８ 接合ステージ、９ 基板、１０，１３ 電極、１１ 固定樹脂、１２ チップ、１４，１４Ａ，１４Ｂ ベース、１５ ブラケット、１６ 支柱、１７ アーム、１８ シート。   DESCRIPTION OF SYMBOLS 1 Ultrasonic horn, 2 Ultrasonic vibrator, 3 Heater, 4 Heater moving means, 5 (theta) direction moving means, 6 Z direction moving means, 7 XY direction moving means, 8 Bonding stage, 9 Substrate, 10, 13 Electrode, 11 Fixed resin, 12 chips, 14, 14A, 14B base, 15 bracket, 16 struts, 17 arms, 18 sheets.

Claims (5)

超音波振動を加えて電子部品と基板とを接合する超音波接合装置であって、
前記基板が載置されるテーブルと、
前記超音波振動を発生させる発振部と、
前記発振部に接続され、該発振部において発生した前記超音波振動を前記電子部品に伝達する振動伝達部と、
前記振動伝達部を加熱するヒータと、
前記振動伝達部と前記ヒータとが接する状態と、前記振動伝達部と前記ヒータとが離間した状態とを実現する移動機構とを備えた超音波接合装置。 An ultrasonic bonding apparatus for bonding an electronic component and a substrate by applying ultrasonic vibration,
A table on which the substrate is placed;
An oscillating unit for generating the ultrasonic vibration;
A vibration transmission unit that is connected to the oscillation unit and transmits the ultrasonic vibration generated in the oscillation unit to the electronic component;
A heater for heating the vibration transmitting unit;
An ultrasonic bonding apparatus comprising: a moving mechanism that realizes a state in which the vibration transmission unit and the heater are in contact with each other and a state in which the vibration transmission unit and the heater are separated from each other. 前記ヒータは、該ヒータを前記振動伝達部に接する位置から前記振動伝達部と離間する位置に移動させるヒータ移動手段を介して前記発振部に接続される、請求項１に記載の超音波接合装置。   The ultrasonic bonding apparatus according to claim 1, wherein the heater is connected to the oscillating unit via a heater moving unit that moves the heater from a position in contact with the vibration transmitting unit to a position separated from the vibration transmitting unit. . 前記テーブルはベース上に設けられ、
前記ヒータは、該ヒータを前記振動伝達部に接する位置から前記振動伝達部と離間する位置に移動させるヒータ移動手段を介して前記ベースに接続される、請求項１に記載の超音波接合装置。 The table is provided on a base;
2. The ultrasonic bonding apparatus according to claim 1, wherein the heater is connected to the base via a heater moving unit that moves the heater from a position in contact with the vibration transmission unit to a position apart from the vibration transmission unit. 前記ヒータと前記振動伝達部との間に、空気よりも熱伝導率が大きく、前記ヒータおよび前記振動伝達部よりも硬度が小さい伝熱部を備えた、請求項１から請求項３のいずれかに記載の超音波接合装置。   4. The heat transfer unit according to claim 1, further comprising a heat transfer unit having a heat conductivity larger than that of air and having a hardness lower than that of the heater and the vibration transfer unit between the heater and the vibration transfer unit. The ultrasonic bonding apparatus described in 1. 電子部品と基板とを有する電子デバイスの製造方法であって、
前記基板をテーブル上に載置する工程と、
超音波発振部からの超音波振動を前記電子部品に伝達する振動伝達部で前記電子部品を保持する工程と、
前記電子部品を保持した振動伝達部をヒータにより加熱する工程と、
前記振動伝達部と前記ヒータとを離間させる工程と、
前記振動伝達部と前記ヒータとを離間させた後に、前記電子部品に伝達された前記超音波振動により前記電子部品と前記基板とを接合する工程とを備えた電子デバイスの製造方法。 A method of manufacturing an electronic device having an electronic component and a substrate,
Placing the substrate on a table;
Holding the electronic component in a vibration transmitting unit that transmits ultrasonic vibration from an ultrasonic oscillator to the electronic component;
Heating the vibration transmission unit holding the electronic component with a heater;
Separating the vibration transmitting unit and the heater;
A method of manufacturing an electronic device comprising: a step of bonding the electronic component and the substrate by the ultrasonic vibration transmitted to the electronic component after separating the vibration transmitting unit and the heater.
JP2004041696A 2004-02-18 2004-02-18 Ultrasonic joining apparatus, and method for producing electronic device Pending JP2005230845A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2004041696A JP2005230845A (en) 2004-02-18 2004-02-18 Ultrasonic joining apparatus, and method for producing electronic device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2004041696A JP2005230845A (en) 2004-02-18 2004-02-18 Ultrasonic joining apparatus, and method for producing electronic device

Publications (1)

Publication Number Publication Date
JP2005230845A true JP2005230845A (en) 2005-09-02

Family

ID=35014322

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2004041696A Pending JP2005230845A (en) 2004-02-18 2004-02-18 Ultrasonic joining apparatus, and method for producing electronic device

Country Status (1)

Country Link
JP (1) JP2005230845A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010036513A (en) * 2008-08-07 2010-02-18 Shigeru Co Ltd Attachment method and apparatus of assembly
KR100950980B1 (en) * 2007-10-18 2010-04-01 (주)창조엔지니어링 Half-wavelength ultrasonic welder of horizontal vibration type, and ultrasonic bonding apparatus having the same
KR100950977B1 (en) * 2007-10-18 2010-04-01 (주)창조엔지니어링 Full-wavelength ultrasonic welder of horizontal vibration type, and ultrasonic bonding apparatus having the same
KR20230156521A (en) * 2022-05-06 2023-11-14 김훈 Ultrasonic heating pressing apparatus for particle alignment densification of laminating sheet or slurry sheet

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100950980B1 (en) * 2007-10-18 2010-04-01 (주)창조엔지니어링 Half-wavelength ultrasonic welder of horizontal vibration type, and ultrasonic bonding apparatus having the same
KR100950977B1 (en) * 2007-10-18 2010-04-01 (주)창조엔지니어링 Full-wavelength ultrasonic welder of horizontal vibration type, and ultrasonic bonding apparatus having the same
JP2010036513A (en) * 2008-08-07 2010-02-18 Shigeru Co Ltd Attachment method and apparatus of assembly
KR20230156521A (en) * 2022-05-06 2023-11-14 김훈 Ultrasonic heating pressing apparatus for particle alignment densification of laminating sheet or slurry sheet
KR102636544B1 (en) * 2022-05-06 2024-02-13 김훈 Ultrasonic heating pressing apparatus for particle alignment densification of laminating sheet or slurry sheet

Similar Documents

Publication Publication Date Title
JP5334843B2 (en) Electronic component mounting apparatus and electronic component mounting method
KR101135335B1 (en) Bonding tool and electronic component mounting apparatus and method
JP2013135008A (en) Wedge tool for wire bonding, bonding device, wire bonding method, and method of manufacturing semiconductor device
TW201830542A (en) Systems and methods for bonding semiconductor elements
WO2007129700A1 (en) Electronic part mounting head, electronic part mounting apparatus, and electronic part mounting method
JP2014072270A (en) Connection method
JP2005230845A (en) Ultrasonic joining apparatus, and method for producing electronic device
JP2009147185A (en) Wire bonding method and wire bonding device
JPH08153759A (en) Single-point bonder and manufacture of semiconductor device
JP2008296161A (en) Ultrasonic horn and ultrasonic bonding device
JPH11284028A (en) Bonding method and its device
JP4210269B2 (en) Ultrasonic flip chip mounting equipment
JP3942738B2 (en) Bump bonding apparatus and method, and semiconductor component manufacturing apparatus
JP4884936B2 (en) Ultrasonic vibration bonding equipment
JP4056276B2 (en) Component mounting method and apparatus
JP3560584B2 (en) Ultrasonic welding equipment
JP2007043086A (en) Ic tag, method for manufacturing ic tag, device for manufacturing ic tag, interposer, method for manufacturing interposer and device for manufacturing interposer
JP2000357705A (en) Electronic component connection method
JP2005199301A (en) Joining auxiliary mechanism
JP2002289644A (en) Method for joining semiconductor element and joining apparatus
JP2003282632A (en) Method and system for packaging electronic component
JPH08340176A (en) Connecting method of lead wire
JP2002184810A (en) Bonding method and device and packaging board
JPH1050766A (en) Method and apparatus for face down bonding
JP2006120724A (en) Method of ultrasonic packaging, and ultrasonic packaging apparatus used therefor

Legal Events

Date Code Title Description
A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20070131

A977 Report on retrieval

Effective date: 20090210

Free format text: JAPANESE INTERMEDIATE CODE: A971007

A131 Notification of reasons for refusal

Effective date: 20090217

Free format text: JAPANESE INTERMEDIATE CODE: A131

A02 Decision of refusal

Effective date: 20090623

Free format text: JAPANESE INTERMEDIATE CODE: A02