JPH1012618A - Method and device for forming solder bump - Google Patents

Method and device for forming solder bump

Info

Publication number
JPH1012618A
JPH1012618A JP8158253A JP15825396A JPH1012618A JP H1012618 A JPH1012618 A JP H1012618A JP 8158253 A JP8158253 A JP 8158253A JP 15825396 A JP15825396 A JP 15825396A JP H1012618 A JPH1012618 A JP H1012618A
Authority
JP
Japan
Prior art keywords
solder
semiconductor element
solder ball
forming
terminals
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP8158253A
Other languages
Japanese (ja)
Inventor
Yoshihiro Ono
善宏 小野
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Priority to JP8158253A priority Critical patent/JPH1012618A/en
Publication of JPH1012618A publication Critical patent/JPH1012618A/en
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10Bump connectors; Manufacturing methods related thereto
    • H01L2224/11Manufacturing methods
    • H01L2224/113Manufacturing methods by local deposition of the material of the bump connector
    • H01L2224/1133Manufacturing methods by local deposition of the material of the bump connector in solid form
    • H01L2224/1134Stud bumping, i.e. using a wire-bonding apparatus
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00Apparatus or processes for manufacturing printed circuits
    • H05K3/30Assembling printed circuits with electric components, e.g. with resistor
    • H05K3/32Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits
    • H05K3/34Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by soldering
    • H05K3/3457Solder materials or compositions; Methods of application thereof
    • H05K3/3478Applying solder preforms; Transferring prefabricated solder patterns

Abstract

PROBLEM TO BE SOLVED: To inexpensively form solder bumps having high connection qualities without requiring any reducing gas and taking the surface oxidation of solder balls into consideration by thermocompression bonding the solder balls to the electrode terminals of a semiconductor device by using ultrasonic waves. SOLUTION: At the time of forming solder bumps 15a on the electrode terminals 9a of a semiconductor device 9, solder balls 10 are thermocompression bonded to the terminals 9a by using ultrasonic waves. For example, a bonding head section 1 is moved to a solder ball supplying section 8 by means of an X-Y table 5 and the solder balls 10 are stuck to the front end of a jig 4 by suction. Then the head section 1 is moved to a semiconductor device fixing section 6 and the balls 10 are stuck to the terminals 9a of the element 9 heated on a heating stage 7 by means of the jig 4 by using an ultrasonic thermocompression bonding system. The solder bumps 15a are formed on all terminals 9a by repeating the above-mentioned operations.

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【0001】[0001]

【発明の属する技術分野】本発明ははんだバンプ形成方
法および装置に関する。
The present invention relates to a method and an apparatus for forming solder bumps.

【0002】[0002]

【従来の技術】この種の技術について記載されている例
としては、材料開発ジャーナル,1992.8,VO
L.8,NO.8,pp22−26.がある。上記文献
においては、還元ガス供給口を備えるボールボンディン
グ装置によるはんだワイヤを用いたはんだバンプ形成方
法について詳細に説明している。
2. Description of the Related Art Examples of this type of technology are described in Journal of Materials Development, 1992.8, VO
L. 8, NO. 8, pp22-26. There is. In the above document, a method of forming a solder bump using a solder wire by a ball bonding apparatus having a reducing gas supply port is described in detail.

【0003】従来の還元ガス供給口を備えるボールボン
ディング装置によるはんだバンプ形成方法について、図
面を参照して説明する。
A conventional method of forming a solder bump by a ball bonding apparatus having a reducing gas supply port will be described with reference to the drawings.

【0004】図3(a)〜(d)は従来の一例を説明す
るための動作工程図である。
FIGS. 3A to 3D are operation process diagrams for explaining an example of the related art.

【0005】図3(a)に示す如くはんだワイヤ10の
先端をトーチロッド13によるアーク放電により溶解し
てはんだボール11bを形成する。この際、ボールの酸
化を防ぐため、還元ガス供給口14よりワイヤ先端近傍
に水素ガス等の還元ガスを供給する。
As shown in FIG. 3A, the tip of the solder wire 10 is melted by an arc discharge by the torch rod 13 to form a solder ball 11b. At this time, a reducing gas such as hydrogen gas is supplied from the reducing gas supply port 14 to the vicinity of the wire tip in order to prevent oxidation of the ball.

【0006】図3(b)に示す如くはんだボール11b
を半導体素子9の電極端子9aにボールボンディング用
キャピラリ12により超音波熱圧着方式で接合する。
[0006] As shown in FIG.
Is bonded to the electrode terminal 9a of the semiconductor element 9 by an ultrasonic thermocompression bonding method using a ball bonding capillary 12.

【0007】図3(c)に示す如くはんだワイヤ10を
引き上げはんだワイヤ10とはんだボール11bとの接
続部で切断する。
As shown in FIG. 3 (c), the solder wire 10 is pulled up and cut at the connection between the solder wire 10 and the solder ball 11b.

【0008】図3(d)に示す如く整形する。[0008] The shaping is performed as shown in FIG.

【0009】以上の動作を繰り返すことにより半導体素
子9の多数の電極端子9a上にはんだバンプ15を形成
する。
By repeating the above operation, solder bumps 15 are formed on many electrode terminals 9a of semiconductor element 9.

【0010】[0010]

【発明が解決しようとする課題】上述した従来のはんだ
バンプ形成方法および装置は、はんだワイヤの先端にボ
ールを形成する際、ボールの酸化を防ぐため、ワイヤ先
端近傍に水素ガス等の還元ガスを供給する必要があり、
製造コストが増加するという問題点があった。また、還
元ガスを供給し、ワイヤの先端にボールを形成した場合
でも、必ずしもボール表面が酸化せず良好な素状とはな
らないことがあり、接合性が良くないという問題点があ
った。
In the above-described conventional method and apparatus for forming a solder bump, when a ball is formed at the tip of a solder wire, a reducing gas such as hydrogen gas is supplied near the tip of the wire to prevent oxidation of the ball. Need to supply,
There is a problem that the manufacturing cost increases. Further, even when a reducing gas is supplied and a ball is formed at the tip of the wire, the ball surface is not always oxidized and may not be in a good shape, and there is a problem that the bonding property is poor.

【0011】[0011]

【課題を解決するための手段】第1の発明のはんだバン
プ形成方法は、フリップチップ等の半導体素子の電極端
子間を接続するはんだバンプを前記半導体素子の電極端
子上に形成するはんだバンプ形成方法において、前記は
んだボールを前記半導体素子の電極端子上に超音波を併
用して熱圧着する。
According to a first aspect of the present invention, there is provided a solder bump forming method for forming a solder bump for connecting between electrode terminals of a semiconductor element such as a flip chip on the electrode terminal of the semiconductor element. In the method, the solder balls are thermocompression-bonded onto the electrode terminals of the semiconductor element together with ultrasonic waves.

【0012】第2の発明のはんだバンプ形成装置は、
(A) 複数のはんだボールを収納するはんだボール供給部
と、(B) 半導体素子を固定加熱するための加熱ステージ
と、(C) XYテーブルに搭載され、前記はんだボール供
給部にあるはんだボールを吸着して、前記加熱ステージ
に取り付けられた前記半導体素子の電極端子に接合する
ボンデイングヘッド部と、を含んで構成される。
According to a second aspect of the present invention, there is provided a solder bump forming apparatus.
(A) a solder ball supply unit for accommodating a plurality of solder balls, (B) a heating stage for fixedly heating a semiconductor element, and (C) a solder ball mounted on an XY table and provided in the solder ball supply unit. And a bonding head that is attracted and joined to an electrode terminal of the semiconductor element attached to the heating stage.

【0013】第3の発明のはんだバンプ形成装置は、第
2の発明において、前記ボンデイングヘッド部が、先端
部にはんだボールを吸着するための吸着孔を有するはん
だボール圧着治具を装着した超音波ホーンと、前記超音
波ホーンを揺動させる揺動機構とを含んで構成される。
According to a third aspect of the present invention, there is provided the solder bump forming apparatus according to the second aspect, wherein the bonding head is provided with an ultrasonic ball crimping jig having a suction hole at a tip end for sucking a solder ball. A horn and a swing mechanism for swinging the ultrasonic horn.

【0014】[0014]

【発明の実施の形態】次に、本発明について図面を参照
して詳細に説明する。
Next, the present invention will be described in detail with reference to the drawings.

【0015】図1(a),(b)は本発明の一実施形態
を示す側面図および部分拡大断面図である。図1
(a),(b)に示すはんだバンプ形成装置は、ボンデ
ィングヘッド部1と半導体素子固定部6と、はんだボー
ル供給部8から構成される。ボンディングヘッド部1
は、超音波ホーン2と超音波ホーン揺動機構3とXY軸
テーブル5から構成される。さらに、超音波ホーン2
は、先端部にはんだボール10を吸着するための吸着孔
4aを含むはんだボール圧着治具4を具備している。半
導体素子固定部6は、半導体素子9を固定・加熱するた
めの加熱ステージ7を含んでいる。
FIGS. 1A and 1B are a side view and a partially enlarged sectional view showing an embodiment of the present invention. FIG.
The solder bump forming apparatus shown in FIGS. 1A and 1B includes a bonding head unit 1, a semiconductor element fixing unit 6, and a solder ball supply unit 8. Bonding head part 1
Comprises an ultrasonic horn 2, an ultrasonic horn swinging mechanism 3, and an XY-axis table 5. In addition, ultrasonic horn 2
Is provided with a solder ball crimping jig 4 including a suction hole 4a for sucking the solder ball 10 at the tip. The semiconductor element fixing section 6 includes a heating stage 7 for fixing and heating the semiconductor element 9.

【0016】図2(a),(b)は、本発明のはんだバ
ンプ形成方法の動作を説明するための動作工程図であ
る。
FIGS. 2A and 2B are operation process diagrams for explaining the operation of the solder bump forming method of the present invention.

【0017】まず、図2(a)に示す如く、ボンディン
グヘッド部1がXY軸テーブル5によりはんだボール供
給部8まで移動し、治具4先端にはんだボール10を真
空吸着する。
First, as shown in FIG. 2A, the bonding head unit 1 is moved to the solder ball supply unit 8 by the XY axis table 5, and the solder ball 10 is vacuum-adsorbed to the tip of the jig 4.

【0018】次に図2(b)に示す如く、ボンディング
ヘッド部1は半導体素子固定部6まで移動し、加熱ステ
ージ7により加熱された半導体素子9の電極端子9a上
にはんだボール10を治具4により超音波熱圧着方式に
て接合する。
Next, as shown in FIG. 2B, the bonding head unit 1 moves to the semiconductor element fixing unit 6, and the solder ball 10 is mounted on the electrode terminals 9a of the semiconductor element 9 heated by the heating stage 7. 4. Bonding is performed by an ultrasonic thermocompression bonding method.

【0019】以上の動作を繰り返すことにより、全ての
電極端子9a上にはんだバンプ15aを形成する。
By repeating the above operation, solder bumps 15a are formed on all the electrode terminals 9a.

【0020】[0020]

【発明の効果】本発明のはんだバンプ形成方法および装
置は、はんだボールを超音波熱圧着して半導体素子の電
極端子上に接続してはんだバンプ形成を行うことから、
十分な接続強度が得られリフローの必要性がない、リフ
ローの必要性がないことから、フラックスレス化が可能
であり、はんだボールを一個づつ半導体素子の電極端子
に接続してゆくので、パッケージに対する汎用性があり
特に多品種小量生産に適し、はんだボールを用いてはん
だ供給を行うことから、安定したはんだ供給量を得ら
れ、はんだを溶融してはんだボールを形成する必要がな
いことから、還元ガスを必要とせず、かつボール表面の
酸化を考慮する必要もなく、製造コストが安くかつ接続
品質が高くなるという効果を有する。
According to the method and apparatus for forming a solder bump of the present invention, a solder ball is formed by ultrasonic thermocompression bonding and connected to an electrode terminal of a semiconductor element to form a solder bump.
Since sufficient connection strength is obtained and there is no need for reflow, there is no need for reflow, so fluxlessness is possible, and solder balls are connected one by one to the electrode terminals of the semiconductor element, so that the package It is versatile and is particularly suitable for large-mix low-volume production.Solder is supplied using solder balls, so a stable amount of solder can be obtained, and there is no need to melt solder to form solder balls. There is no need for a reducing gas, and there is no need to consider oxidation of the ball surface, which has the effect of reducing the manufacturing cost and increasing the connection quality.

【図面の簡単な説明】[Brief description of the drawings]

【図1】(a),(b)は本発明の一実施形態を示す側
面図および部分拡大断面図である。
FIGS. 1A and 1B are a side view and a partially enlarged sectional view showing an embodiment of the present invention.

【図2】(a),(b)は、本発明のはんだバンプ形成
方法の動作を説明するための動作工程図である。
FIGS. 2A and 2B are operation process diagrams for explaining the operation of the solder bump forming method of the present invention.

【図3】(a)〜(d)は従来の一例を説明するための
動作工程図である。
3 (a) to 3 (d) are operation process diagrams for explaining an example of the related art.

【符号の説明】[Explanation of symbols]

1 ボンディングヘッド部 2 超音波ホーン 3 超音波ホーン揺動機構 4 はんだボール圧着治具 4a 吸着孔 5 XYテーブル 6 半導体素子固定部 7 加熱ステージ 8 はんだボール供給部 9 半導体素子 9a 電極端子 10 はんだボール 11 はんだワイヤ 11a はんだボール 12 ボールボンディング用キャピラリ 13 トーチロッド 14 還元ガス供給口 15 はんだバンプ DESCRIPTION OF SYMBOLS 1 Bonding head part 2 Ultrasonic horn 3 Ultrasonic horn rocking mechanism 4 Solder ball crimping jig 4a Suction hole 5 XY table 6 Semiconductor element fixing part 7 Heating stage 8 Solder ball supply part 9 Semiconductor element 9a Electrode terminal 10 Solder ball 11 Solder wire 11a Solder ball 12 Capillary for ball bonding 13 Torch rod 14 Reduction gas supply port 15 Solder bump

Claims (3)

【特許請求の範囲】[Claims] 【請求項1】 フリップチップ等の半導体素子の電極端
子間を接続するはんだバンプを前記半導体素子の電極端
子上に形成するはんだバンプ形成方法において、前記は
んだボールを前記半導体素子の電極端子上に超音波を併
用して熱圧着すること特徴とするはんだバンプ形成方
法。
1. A method of forming a solder bump on an electrode terminal of a semiconductor element such as a flip chip, the method comprising: forming a solder bump on an electrode terminal of the semiconductor element; A method for forming solder bumps, which comprises performing thermocompression bonding using sound waves together.
【請求項2】(A) 複数のはんだボールを収納するはんだ
ボール供給部と、(B) 半導体素子を固定加熱するための
加熱ステージと、(C) XYテーブルに搭載され、前記は
んだボール供給部にあるはんだボールを吸着して、前記
加熱ステージに取り付けられた前記半導体素子の電極端
子に接合するボンデイングヘッド部と、を含むことを特
徴とするはんだバンプ形成装置。
(A) a solder ball supply unit for accommodating a plurality of solder balls; (B) a heating stage for fixedly heating a semiconductor element; and (C) a solder ball supply unit mounted on an XY table. And a bonding head for adsorbing the solder ball and joining the electrode to the electrode terminal of the semiconductor element mounted on the heating stage.
【請求項3】 前記ボンデイングヘッド部が、先端部に
はんだボールを吸着するための吸着孔を有するはんだボ
ール圧着治具を装着した超音波ホーンと、前記超音波ホ
ーンを揺動させる揺動機構とを含む請求項2記載のはん
だバンプ形成装置。
3. An ultrasonic horn in which the bonding head has a solder ball crimping jig having a suction hole for adsorbing a solder ball at a tip thereof, and a swing mechanism for swinging the ultrasonic horn. The solder bump forming apparatus according to claim 2, comprising:
JP8158253A 1996-06-19 1996-06-19 Method and device for forming solder bump Pending JPH1012618A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8158253A JPH1012618A (en) 1996-06-19 1996-06-19 Method and device for forming solder bump

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8158253A JPH1012618A (en) 1996-06-19 1996-06-19 Method and device for forming solder bump

Publications (1)

Publication Number Publication Date
JPH1012618A true JPH1012618A (en) 1998-01-16

Family

ID=15667597

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8158253A Pending JPH1012618A (en) 1996-06-19 1996-06-19 Method and device for forming solder bump

Country Status (1)

Country Link
JP (1) JPH1012618A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007027155A (en) * 2005-07-12 2007-02-01 Nichicon Corp Solder supply method to minute soldering land
JP2007128982A (en) * 2005-11-01 2007-05-24 Nec Corp Semiconductor bump connection structure and its manufacturing method

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007027155A (en) * 2005-07-12 2007-02-01 Nichicon Corp Solder supply method to minute soldering land
JP2007128982A (en) * 2005-11-01 2007-05-24 Nec Corp Semiconductor bump connection structure and its manufacturing method
JP4720438B2 (en) * 2005-11-01 2011-07-13 日本電気株式会社 Flip chip connection method

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