JP2002164379A - Apparatus and method for wire bonding and semiconductor device - Google Patents

Apparatus and method for wire bonding and semiconductor device

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Publication number
JP2002164379A
JP2002164379A JP2000360165A JP2000360165A JP2002164379A JP 2002164379 A JP2002164379 A JP 2002164379A JP 2000360165 A JP2000360165 A JP 2000360165A JP 2000360165 A JP2000360165 A JP 2000360165A JP 2002164379 A JP2002164379 A JP 2002164379A
Authority
JP
Japan
Prior art keywords
capillary
bonding
wire
electrode
tip
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
JP2000360165A
Other languages
Japanese (ja)
Inventor
Makoto Owaki
真 大脇
Mamoru Suwa
守 諏訪
Ken Imai
研 今井
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP2000360165A priority Critical patent/JP2002164379A/en
Publication of JP2002164379A publication Critical patent/JP2002164379A/en
Withdrawn legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies
    • H01L24/78—Apparatus for connecting with wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
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    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H—ELECTRICITY
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    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
    • H01L2224/48465—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/78—Apparatus for connecting with wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/78—Apparatus for connecting with wire connectors
    • H01L2224/7825—Means for applying energy, e.g. heating means
    • H01L2224/783—Means for applying energy, e.g. heating means by means of pressure
    • H01L2224/78301—Capillary
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/78—Apparatus for connecting with wire connectors
    • H01L2224/7825—Means for applying energy, e.g. heating means
    • H01L2224/783—Means for applying energy, e.g. heating means by means of pressure
    • H01L2224/78301—Capillary
    • H01L2224/78302—Shape
    • H—ELECTRICITY
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
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    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/852—Applying energy for connecting
    • H01L2224/85201—Compression bonding
    • H01L2224/85205—Ultrasonic bonding
    • H—ELECTRICITY
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    • H01L2924/01—Chemical elements
    • H01L2924/01004—Beryllium [Be]
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    • H01L2924/01—Chemical elements
    • H01L2924/01005—Boron [B]
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    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/14—Integrated circuits

Abstract

PROBLEM TO BE SOLVED: To provide an apparatus and a method for wire bonding, capable of dealing with a narrow electrode pitch at a first bonded part and obtaining a sufficient bonding strength at a second bonded part. SOLUTION: The method for wire bonding comprises the steps of forming the first bonded part by an inside capillary 12, having a distal end 12a of a fine diameter, relatively movably providing an outside capillary 14 in the longitudinal axial direction at the outside of the capillary 12, and simultaneously, forming a second bonded part, by using both the capillary 12 and the capillary 14.

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【０００１】[0001]

【発明の属する技術分野】本発明はワイヤボンディング
装置及び方法に係わり、特に、ＩＣチップ等の電子部品
の外部接続端子と実装基板の端子との間をワイヤボンデ
ィングするためのワイヤボンディング装置及び方法、及
びそのような装置により製造された半導体装置に関す
る。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a wire bonding apparatus and method, and more particularly to a wire bonding apparatus and method for wire bonding between external connection terminals of electronic components such as IC chips and terminals of a mounting board. And a semiconductor device manufactured by such a device.

【０００２】近年、ＩＣチップの高密度化に伴い、ＩＣ
チップを外部回路に接続するための外部接続端子のピッ
チは益々狭まる傾向にある。このような狭いピッチの外
部接続端子にボンディングワイヤを接合するために、ワ
イヤボンダに設けられるキャピラリの先端も、直径の細
いものが使用されている。In recent years, with the increase in the density of IC chips, IC
The pitch of external connection terminals for connecting a chip to an external circuit tends to be narrower. In order to bond a bonding wire to such an external connection terminal having a narrow pitch, the tip of a capillary provided in a wire bonder also has a small diameter.

【０００３】[0003]

【従来の技術】図１は従来のワイヤボンディング工程の
一例を説明するための図である。図１に示すワイヤボン
ディングは、まず被実装部品としてのＩＣチップ１の外
部接続電極１ａに対して、例えば金ワイヤよりなるボン
ディングワイヤ２の一端を接合する（図１（ａ）及び図
１（ｂ））。この際、ボンディングワイヤ２の先端部に
は予めボールが形成されており、キャピラリ３の先端で
ボールをＩＣチップの電極１ａに押圧することによりボ
ンディングワイヤの一端を電極１ａに接合する。この接
合は外部ヒーターによる加熱及びキャピラリ３による押
圧により行われる。また、キャピラリによる押圧と同時
に超音波を印加する場合もある。この接合又は接合部分
を第１ボンドと称する。2. Description of the Related Art FIG. 1 is a view for explaining an example of a conventional wire bonding process. In the wire bonding shown in FIG. 1, first, one end of a bonding wire 2 made of, for example, a gold wire is bonded to an external connection electrode 1a of an IC chip 1 as a mounted component (FIGS. 1A and 1B). )). At this time, a ball is previously formed at the tip of the bonding wire 2, and one end of the bonding wire is joined to the electrode 1 a by pressing the ball against the electrode 1 a of the IC chip with the tip of the capillary 3. This joining is performed by heating by an external heater and pressing by the capillary 3. In some cases, an ultrasonic wave is applied simultaneously with the pressing by the capillary. This bonding or bonding portion is referred to as a first bond.

【０００４】つぎに、キャピラリ３を、ＩＣチップ１と
接続すべきリードフレーム又は実装基板の電極（端子）
４の上へと移動する（図１（ｃ））。このとき、ボンデ
ィングワイヤ２はキャピラリ３の中心の貫通孔を通過し
てキャピラリ３の先端から繰り出される。Next, the capillary 3 is connected to an electrode (terminal) of a lead frame or a mounting substrate to be connected to the IC chip 1.
4 (FIG. 1 (c)). At this time, the bonding wire 2 passes through the through hole at the center of the capillary 3 and is drawn out from the tip of the capillary 3.

【０００５】キャピラリ３が電極４の上に移動した後、
キャピラリ３の先端を電極４に押圧することによりボン
ディングワイヤ２を電極４に接合する（図４（ｄ））。
この際、外部ヒーターにより加熱しながらキャピラリ３
で押圧することによりボンディングワイヤ２を電極４に
接合する。キャピラリの押圧と同時に超音波を印加する
場合もある。そして、接合時の押圧力によりボンディン
グワイヤ２を切断して、ワイヤボンディングが終了す
る。この接合又は接合部分を第２ボンドと称する。After the capillary 3 has moved over the electrode 4,
The bonding wire 2 is joined to the electrode 4 by pressing the tip of the capillary 3 against the electrode 4 (FIG. 4D).
At this time, the capillary 3 is heated while being heated by an external heater.
The bonding wire 2 is bonded to the electrode 4 by pressing. Ultrasonic waves may be applied simultaneously with the pressing of the capillary. Then, the bonding wire 2 is cut by the pressing force at the time of joining, and the wire bonding is completed. This bonding or bonding part is called a second bond.

【０００６】図２は従来のワイヤボンディングに使用さ
れるキャピラリの側面図であり、（ａ）は一般的なキャ
ピラリを示し、（ｂ）はボトルネック型のキャピラリを
示している。FIG. 2 is a side view of a capillary used for conventional wire bonding. FIG. 2A shows a general capillary, and FIG. 2B shows a bottleneck type capillary.

【０００７】図２（ａ）に示すキャピラリは先端部にテ
ーパが付けられて円錐形状となっており、端面が所定の
面積となるように構成されている。この形状のキャピラ
リは、電極間のピッチが比較的大きい従来のＩＣチップ
に対して使用されていた。The capillary shown in FIG. 2A has a conical shape with a tapered end, and is configured such that the end face has a predetermined area. Capillaries of this shape have been used for conventional IC chips where the pitch between the electrodes is relatively large.

【０００８】一方、図２（ｂ）に示すボトルネック型の
キャピラリは、同様に端部が円錐形状に形成されている
が、円錐形状部分の先が細い外形の円柱形状に形成され
ている。このような形状のキャピラリは、電極間ピッチ
の狭いＩＣチップに対して使用される。すなわち、ＩＣ
チップの電極間ピッチが狭くなると、図２（ａ）に示す
従来のキャピラリでは、隣接する電極に接続されたボン
ディングワイヤにキャピラリの側部が接触するおそれが
あるためである。図２（ｂ）に示すボトルネック型のキ
ャピラリであれば、先端の細い円柱形状部分により、隣
接する電極のボンディングワイヤとの間の距離を確保す
ることができる。On the other hand, the capillary of the bottleneck type shown in FIG. 2 (b) has a conical end similarly, but the conical portion is formed in a cylindrical shape with a tapered outer shape. A capillary having such a shape is used for an IC chip having a narrow pitch between electrodes. That is, IC
This is because, when the pitch between the electrodes of the chip is reduced, in the conventional capillary shown in FIG. 2A, there is a possibility that the side of the capillary contacts a bonding wire connected to an adjacent electrode. In the case of the bottleneck type capillary shown in FIG. 2B, the distance between the bonding wire of the adjacent electrode can be ensured by the thin cylindrical portion at the tip.

【０００９】[0009]

【発明が解決しようとする課題】図３（ａ）は、上述の
図２（ａ）に示すキャピラリを使用してワイヤボンディ
ングを行った場合の第２ボンド部分を上から見た図であ
る。円形の部分３ａはキャピラリにより切断されたボン
ディングワイヤ２の断面であり、その上の三日月型の部
分３ｂは、ボンディングワイヤ２がキャピラリの押圧に
より潰された部分に相当する。FIG. 3A is a top view of a second bonding portion when wire bonding is performed using the capillary shown in FIG. 2A. The circular portion 3a is a cross section of the bonding wire 2 cut by the capillary, and the crescent-shaped portion 3b thereon corresponds to a portion where the bonding wire 2 is crushed by pressing the capillary.

【００１０】一方、図３（ｂ）は、図２（ｂ）に示すボ
トルネック型キャピラリによりワイヤボンディングを行
った場合の第２ボンド部分を上から見た図である。図３
（ａ）と同様に、円形の部分３ａはボトルネック型キャ
ピラリにより切断されたボンディングワイヤ２の断面で
あり、その上の三日月型の部分３ｂは、ボンディングワ
イヤ２がボトルネック型キャピラリの押圧により潰され
た部分に相当する。On the other hand, FIG. 3B is a top view of a second bond portion when wire bonding is performed by the bottleneck type capillary shown in FIG. 2B. FIG.
As in (a), the circular portion 3a is a cross section of the bonding wire 2 cut by the bottleneck type capillary, and the crescent-shaped portion 3b thereon is crushed by the pressing of the bonding wire 2 by the bottleneck type capillary. It corresponds to the part which was done.

【００１１】ここで、ボンディングワイヤ２が回路基板
の電極４と接合される部分は潰された部分３ａである。
図３（ａ）に示す潰された部分３ｂは、キャピラリの先
端の外径に対応して大きな面積を有するが、図３（ｂ）
に示す潰された部分３ｂは、キャピラリの外径が小さい
ため、図３（ａ）に示す潰された部分３ｂよりかなり小
さくなっている。Here, a portion where the bonding wire 2 is bonded to the electrode 4 of the circuit board is a crushed portion 3a.
The crushed portion 3b shown in FIG. 3A has a large area corresponding to the outer diameter of the tip of the capillary.
The crushed portion 3b shown in FIG. 3 is considerably smaller than the crushed portion 3b shown in FIG. 3A because the outer diameter of the capillary is small.

【００１２】上述のように、狭い電極ピッチのＩＣチッ
プのワイヤボンディングにボトルネック型キャピラリを
使用した場合、第２ボンド部分でのボンディングワイヤ
の接合面積が小さくなり、接合強度を十分に得ることが
できないといった問題があった。As described above, when a bottleneck type capillary is used for wire bonding of an IC chip having a narrow electrode pitch, the bonding area of the bonding wire at the second bonding portion is reduced, and sufficient bonding strength can be obtained. There was a problem that it could not be done.

【００１３】上述の問題を解決するために、例えば特開
昭６１−１２１３４４号公報には、第２ボンド部分をボ
ンディング後に再度押圧してボンディングワイヤの圧着
面積を増大して接合強度を増大する方法が提案されてい
る。In order to solve the above-mentioned problem, for example, Japanese Patent Application Laid-Open No. 61-121344 discloses a method in which the second bonding portion is pressed again after bonding to increase the bonding area of the bonding wire to increase the bonding strength. Has been proposed.

【００１４】また、第２ボンド部分のボンディング終了
後に別工程において第２ボンド部分の上から更にボール
を圧着する方法も提案されている。A method has also been proposed in which a ball is further pressed from above the second bond portion in a separate step after the bonding of the second bond portion is completed.

【００１５】しかし、これらの方法は、第２ボンド終了
後に更に押圧工程を別の工程として行う必要があるた
め、押圧する位置の位置ずれが生じるおそれがある。ま
た、ボンディングワイヤの最初に接合された部分へスト
レスが加わるといった問題もある。さらに、別工程で再
度押圧することによる工程時間の増大といった問題もあ
る。However, in these methods, since the pressing step needs to be further performed as a separate step after the end of the second bond, there is a possibility that the pressing position is displaced. There is also a problem that a stress is applied to a portion where the bonding wire is first joined. Furthermore, there is a problem that the process time is increased by pressing again in another process.

【００１６】本発明は上記の点に鑑みてなされたもので
あり、第１ボンド部分では狭い電極ピッチにも対応で
き、第２ボンド部分において十分な接合強度を得ること
のできるワイヤボンディング装置及びワイヤボンディン
グ方法を提供することを目的とする。The present invention has been made in view of the above points, and a wire bonding apparatus and a wire which can cope with a narrow electrode pitch in a first bond portion and obtain a sufficient bonding strength in a second bond portion. An object of the present invention is to provide a bonding method.

【００１７】[0017]

【課題を解決するための手段】上記の課題を解決するた
めに本発明では、次に述べる各手段を講じたことを特徴
とするものである。Means for Solving the Problems In order to solve the above problems, the present invention is characterized by taking the following means.

【００１８】請求項１記載の発明は、被実装部品の電極
と、実装基板の電極との間をキャピラリを使用してボン
ディングワイヤにより接続するワイヤボンディング装置
であって、前記キャピラリは、中心にボンディングワイ
ヤ供給用の貫通孔を有し、先端部分がボンディングワイ
ヤを押圧して接合するような形状に形成された内側キャ
ピラリと、前記内側キャピラリを収容する貫通孔を有
し、前記内側キャピラリの前記先端部分の外径より大き
な外径を有する先端部を備えた外側キャピラリとを有し
ており、前記内側キャピラリは前記外側キャピラリの前
記貫通孔内で移動可能に配置され、前記内側キャピラリ
の前記先端部分が前記外側キャピラリの先端部から所定
距離突出した状態でボンディングを行うことができ、且
つ前記外側キャピラリを前記内側キャピラリに対して相
対移動することにより前記内側キャピラリと前記外側キ
ャピラリの両方で同時にボンディングを行うことができ
ることを特徴とするものである。According to a first aspect of the present invention, there is provided a wire bonding apparatus for connecting an electrode of a component to be mounted and an electrode of a mounting board by a bonding wire using a capillary, wherein the capillary is bonded at a center. An inner capillary having a through-hole for supplying a wire, a tip portion formed into a shape such that the tip portion presses and joins a bonding wire, and a through-hole for accommodating the inner capillary, wherein the tip of the inner capillary is An outer capillary with a tip having an outer diameter greater than the outer diameter of the portion, wherein the inner capillary is movably disposed within the through hole of the outer capillary, and wherein the tip of the inner capillary is Can be bonded while projecting a predetermined distance from the tip of the outer capillary, and the outer capillary can be bonded. The is characterized in that it is possible to perform simultaneously bonding at both the outer capillary and the inner capillary by relative movement with respect to the inner capillary.

【００１９】また、請求項２記載の発明は、請求項１記
載のワイヤボンディング装置であって、前記内側キャピ
ラリと前記外側キャピラリとを接続して、前記外側キャ
ピラリに作用する外力を前記内側キャピラリに伝達する
弾性部材を更に有し、外力が作用していない状態におい
て、前記内側キャピラリの前記先端部分は前記外側キャ
ピラリの先端部から所定距離突出していることを特徴と
するものである。According to a second aspect of the present invention, there is provided the wire bonding apparatus according to the first aspect, wherein the inner capillary and the outer capillary are connected to each other to apply an external force acting on the outer capillary to the inner capillary. It further has an elastic member for transmitting, and when no external force is applied, the tip portion of the inner capillary projects a predetermined distance from the tip portion of the outer capillary.

【００２０】また、請求項３記載の発明は、請求項１記
載のワイヤボンディング装置であって、前記外側キャピ
ラリは第１のアームにより支持され、第１のアームを移
動することによって移動可能であり、前記内側キャピラ
リは第２のアームにより支持され第２のアームを移動す
ることによって外側キャピラリとは独立して移動可能で
あることを特徴とするものである。According to a third aspect of the present invention, in the wire bonding apparatus according to the first aspect, the outer capillary is supported by a first arm, and is movable by moving the first arm. The inner capillary is supported by a second arm and is movable independently of the outer capillary by moving the second arm.

【００２１】また、請求項４記載の発明は、被実装部品
の電極と、実装基板の電極との間をボンディングワイヤ
により接続するワイヤボンディング方法であって、内側
キャピラリの先端部分によりボンディングワイヤを被実
装部品の電極に押圧して接合する工程と、ワイヤボンデ
ィングを前記内側キャピラリの先端から繰り出しながら
前記内側キャピラリを実装基板の電極上に移動する工程
と、前記内側キャピラリの先端部分によりボンディング
ワイヤを実装基板の電極に押圧して接合するとともに、
前記内側キャピラリを包囲するように設けられた外側キ
ャピラリを前記内側キャピラリに対して相対移動して、
前記外側キャピラリの先端によりボンディグワイヤを実
装基板の電極に押圧して接合する工程とを有することを
特徴とするものである。According to a fourth aspect of the present invention, there is provided a wire bonding method for connecting an electrode of a component to be mounted and an electrode of a mounting board with a bonding wire, wherein the bonding wire is covered by a tip portion of the inner capillary. A step of pressing and bonding to an electrode of a mounted component, a step of moving the inner capillary onto an electrode of a mounting board while extending wire bonding from a tip of the inner capillary, and mounting a bonding wire by a tip portion of the inner capillary. Pressing and joining to the electrode of the substrate,
The outer capillary provided so as to surround the inner capillary is relatively moved with respect to the inner capillary,
Pressing the bonding wire against the electrode of the mounting board with the tip of the outer capillary to join the bonding wire.

【００２２】また、請求項５記載の発明は、被実装部品
が実装基板に実装された半導体装置であって、前記被実
装部品の電極は前記実装基板の電極に対してボンディン
グワイヤにより接続されており、前記実装基板の電極に
おけるボンディングワイヤの接合部分は、内側接合部分
と該内側接合部分の周囲に位置する外側接合部分とを含
み、該外側接合部分は該内側接合部分に対して位置ずれ
無く形成されていることを特徴とするものである。上記
した各手段は、次のように作用する。According to a fifth aspect of the present invention, there is provided a semiconductor device having a mounted component mounted on a mounting board, wherein the electrodes of the mounted component are connected to the electrodes of the mounting board by bonding wires. The bonding portion of the bonding wire in the electrode of the mounting board includes an inner bonding portion and an outer bonding portion located around the inner bonding portion, and the outer bonding portion does not shift with respect to the inner bonding portion. It is characterized by being formed. Each of the means described above operates as follows.

【００２３】請求項１及び４記載の発明によれば、内側
キャピラリに加えて外径の大きい外側キャピラリによっ
てもボンディングワイヤが押圧されて接合されるため、
大きな接合面積を得ることができ、十分な接合強度を得
ることができる。According to the first and fourth aspects of the present invention, the bonding wire is pressed and joined not only by the inner capillary but also by the outer capillary having a large outer diameter.
A large bonding area can be obtained, and sufficient bonding strength can be obtained.

【００２４】また、内側キャピラリと外側キャピラリと
は相対的に上下移動するだけで水平方向の位置関係は変
わることはない。したがって、内側キャピラリによる押
圧部分（接合部分）と、その外側に形成される外側キャ
ピラリによる押圧部分（接合部分）とは常に同じ位置関
係を維持しており、位置ずれを起こすことはない。した
がって、全ての接合部分において正確で一様な接合強度
を得ることができる。Further, the positional relationship in the horizontal direction does not change only by moving the inner capillary and the outer capillary up and down relatively. Therefore, the pressed portion (joined portion) by the inner capillary and the pressed portion (joined portion) by the outer capillary formed outside thereof always maintain the same positional relationship, and no positional displacement occurs. Therefore, accurate and uniform joining strength can be obtained at all joining portions.

【００２５】また、外側キャピラリによる押圧（接合）
は内側キャピラリによる押圧（接合）と同じ工程におい
てほぼ同時に行われるので、ボンディング時間も通常の
ボンディング時間より長くなることはない。Pressing (joining) by the outer capillary
Is performed almost simultaneously in the same step as pressing (bonding) by the inner capillary, so that the bonding time does not become longer than the normal bonding time.

【００２６】また、請求項２記載の発明によれば、内側
キャピラリと外側キャピラリとを弾性部材により接続し
て、外側キャピラリを接合する部分に対して移動するだ
けで、内側キャピラリを接合部分に押圧することができ
る。したがって、簡単な構造により内側キャピラリと外
側キャピラリの両方のボンディング動作を行うことがで
きる。According to the second aspect of the present invention, the inner capillary and the outer capillary are connected by the elastic member, and the inner capillary is pressed against the joint by simply moving the outer capillary with respect to the joint. can do. Therefore, the bonding operation of both the inner capillary and the outer capillary can be performed with a simple structure.

【００２７】また、請求項３記載の発明によれば、被実
装部品の電極に対する接合のための押圧力と実装基板の
電極に対する接合のための押圧力とを独立して任意に調
整することができ、最適な押圧力による確実な接合を達
成することができる。また、内側キャピラリを支持する
第１のア−ム及び外側キャピラリを支持する第２のアー
ムを超音波ホーンとして形成すれば、内側キャピラリ及
び外側キャピラリの両方に独立して超音波を印加するこ
とができ、被実装部品及び実装基板共に最適な超音波に
よる確実な接合を達成することができる。According to the third aspect of the present invention, the pressing force for joining the component to be mounted to the electrode and the pressing force for joining the mounting substrate to the electrode can be independently and arbitrarily adjusted. As a result, reliable bonding with optimal pressing force can be achieved. If the first arm supporting the inner capillary and the second arm supporting the outer capillary are formed as ultrasonic horns, it is possible to independently apply ultrasonic waves to both the inner capillary and the outer capillary. As a result, it is possible to achieve optimal bonding of both the component to be mounted and the mounting board by optimal ultrasonic waves.

【００２８】また、請求項５記載の発明によれば、内側
接合部分と外側接合部分とは常に同じ位置関係で形成さ
れるので、実装基板の全ての電極に対して一様な接合強
度を得ることができ、半導体装置の信頼性が向上する。According to the fifth aspect of the present invention, since the inner joint portion and the outer joint portion are always formed in the same positional relationship, uniform joining strength is obtained for all the electrodes of the mounting board. And the reliability of the semiconductor device is improved.

【発明の実施の形態】次に、本発明の実施の形態につい
て図面と共に説明する。Next, embodiments of the present invention will be described with reference to the drawings.

【００２９】図４は本発明の第１の実施の形態によるワ
イヤボンディング装置に設けられるキャピラリ１０の一
部断面側面図である。FIG. 4 is a partial sectional side view of the capillary 10 provided in the wire bonding apparatus according to the first embodiment of the present invention.

【００３０】キャピラリ１０は内側キャピラリ１２と外
側キャピラリ１４とよりなる。外側キャピラリ１４は、
図３（ａ）に示す従来のキャピラリと同様な外形を有し
ており、長手方向中心軸に沿って貫通孔１４ａが形成さ
れている。貫通孔１４ａは、内側キャピラリ１２の外形
に合わせて形成されており、内側キャピラリ１２は貫通
孔１４ａの中で軸方向に移動可能である。なお、図４に
おいて、外側キャピラリ１４は断面として示されてい
る。The capillary 10 includes an inner capillary 12 and an outer capillary 14. The outer capillary 14 is
It has the same outer shape as the conventional capillary shown in FIG. 3A, and has a through hole 14a formed along the central axis in the longitudinal direction. The through hole 14a is formed in accordance with the outer shape of the inner capillary 12, and the inner capillary 12 is movable in the axial direction in the through hole 14a. In FIG. 4, the outer capillary 14 is shown as a cross section.

【００３１】内側キャピラリ１２は図３（ｂ）に示すボ
トルネック型キャピラリと同様な外形を有しており、そ
の細い直径の先端部分１２ａは外側キャピラリ１４の先
端から突出している。The inner capillary 12 has an outer shape similar to that of the bottleneck type capillary shown in FIG. 3B, and a distal end portion 12a having a small diameter protrudes from the distal end of the outer capillary 14.

【００３２】内側キャピラリ１２の先端部分１２ａの反
対側の端部には、フランジ部１２ｂが形成されている。
フランジ部１２ｂの外径は外側キャピラリ１４の外形と
ほぼ同一である。A flange portion 12b is formed at the end of the inner capillary 12 opposite to the tip portion 12a.
The outer diameter of the flange portion 12b is substantially the same as the outer shape of the outer capillary 14.

【００３３】内側キャピラリ１２のフランジ部１２ｂと
外側キャピラリ１４の端部との間にはコイルスプリング
１６が設けられている。すなわち、コイルスプリング１
６の一端は内側キャピラリ１２のフランジ部１２ｂに固
定され、他端は外側フランジ１４の端部に固定されてい
る。A coil spring 16 is provided between the flange 12 b of the inner capillary 12 and the end of the outer capillary 14. That is, the coil spring 1
One end of 6 is fixed to the flange 12 b of the inner capillary 12, and the other end is fixed to the end of the outer flange 14.

【００３４】ボンディングワイヤ２は、図４には示して
いないが、内側キャピラリ１２の中心に設けられた貫通
孔１２ｃにフランジ部１２側から挿入され、先端部分１
２ａから延出してボンディングに供される。Although not shown in FIG. 4, the bonding wire 2 is inserted from the flange 12 side into a through hole 12c provided at the center of the inner capillary 12, and the tip 1
It extends from 2a and is used for bonding.

【００３５】上述の構成のキャピラリ１０において、外
側キャピラリ１４をアーム１８により支持して、アーム
を上下移動（あるいは旋回）することによりボンディン
グ動作を行う。外側キャピラリ１４を長手方向が垂直と
なるように支持した場合、内側キャピラリは図４に示す
ような位置となるように構成されている。すなわち、内
側キャピラリ１２の先端部分１２ａが外側キャピラリ１
４の先端から大きく突出した状態となる。In the capillary 10 having the above-described structure, the bonding operation is performed by supporting the outer capillary 14 with the arm 18 and moving the arm up and down (or turning). When the outer capillary 14 is supported so that the longitudinal direction is vertical, the inner capillary is configured to be at a position as shown in FIG. That is, the tip portion 12a of the inner capillary 12 is
4 protrudes greatly from the tip.

【００３６】なお、本実施の形態によるワイヤボンディ
ング装置は、上述のキャピラリ１０の他にアーム１８を
移動する機構、ボンディングワイヤ２を供給する機構、
ボンディングワイヤ２にボールを形成する機構等が設け
られるが、これらの機構は従来と同様な構成であり、そ
の図示は省略する。The wire bonding apparatus according to the present embodiment includes a mechanism for moving the arm 18 in addition to the above-described capillary 10, a mechanism for supplying the bonding wire 2,
Although a mechanism for forming a ball on the bonding wire 2 is provided, these mechanisms have the same configuration as that of the related art, and are not shown.

【００３７】次に、図４に示すキャピラリ１０を用いた
場合のボンディング動作について、図５乃至図７を参照
しながら説明する。図５（ａ）は第１ボンドを形成する
際のキャピラリ１０の状態を示しており、図５（ｂ）は
第２ボンド部分を形成する際のキャピラリ１０の状態を
示している。なお、図５において、ボンディングワイヤ
２及び内側キャピラリ１２を透視した状態が示されてい
る。Next, a bonding operation using the capillary 10 shown in FIG. 4 will be described with reference to FIGS. FIG. 5A shows a state of the capillary 10 when forming the first bond, and FIG. 5B shows a state of the capillary 10 when forming the second bond portion. FIG. 5 shows a state in which the bonding wire 2 and the inner capillary 12 are seen through.

【００３８】本実施の形態によるキャピラリ１０を用い
たワイヤボンディング装置において、第１ボンドの形成
は内側キャピラリ１２のみを使用しておこない、第２ボ
ンドの形成では内側キャピラリ１２に加えて外側キャピ
ラリ１４も使用する。通常、第１ボンド形成時における
キャピラリによる押圧力は、第２ボンドにおけるキャピ
ラリの押圧力より小さい。そこで、本実施の形態では、
第１ボンドに使用する内側キャピラリ１２への押圧力は
アーム１８から外側キャピラリ１４及びコイルスプリン
グ１６を介して内側キャピラリ１２に加えられる。In the wire bonding apparatus using the capillary 10 according to the present embodiment, the first bond is formed using only the inner capillary 12, and the second bond is formed using the outer capillary 14 in addition to the inner capillary 12. use. Usually, the pressing force of the capillary at the time of forming the first bond is smaller than the pressing force of the capillary at the time of the second bond. Therefore, in the present embodiment,
The pressing force on the inner capillary 12 used for the first bond is applied from the arm 18 to the inner capillary 12 via the outer capillary 14 and the coil spring 16.

【００３９】図５（ａ）に示す状態は、キャピラリ１０
により第１ボンドを形成している状態であり、内側キャ
ピラリ１２の先端部分１２ａだけがボンディングワイヤ
２の先端に形成されたボールを被実装部品としてのＩＣ
チップ１の電極１ａに対して押圧している。図６は図５
（ａ）の状態における第１ボンド部分を拡大して示す図
である。この状態ではコイルスプリング１６は僅かに引
っ張られた状態であり、コイルスプリング１６の力によ
り内側キャピラリ１２に押圧力が加えられている。な
お、第１ボンド形成の際、従来と同様にボンディングワ
イヤ２の先端にボールが形成され、第１ボンドの際には
加圧と同時に外部ヒータによる加熱が行われる。FIG. 5A shows the state of the capillary 10.
Is formed, and only the tip portion 12a of the inner capillary 12 has a ball formed at the tip of the bonding wire 2 as an IC as a component to be mounted.
The electrode 1a of the chip 1 is pressed. FIG. 6 shows FIG.
It is a figure which expands and shows the 1st bond part in the state of (a). In this state, the coil spring 16 is slightly pulled, and a pressing force is applied to the inner capillary 12 by the force of the coil spring 16. At the time of forming the first bond, a ball is formed at the tip of the bonding wire 2 as in the related art, and at the time of the first bond, heating is performed by an external heater simultaneously with pressurization.

【００４０】図５（ａ）に示す状態では、内側キャピラ
リ１２の先端部１２ａは僅かに外側キャピラリ１４内に
入りこむが、未だ外側キャピラリ１４の先端からは大き
く突出している。このため、隣接したボンディング部分
のボンディングワイヤに外側キャピラリ１４が接触する
ことはない。すなわち、第１ボンドの形成は外径の小さ
い内側キャピラリ１２の先端部分１２ａのみで行われる
ので、狭い電極間ピッチのＩＣチップであっても、隣接
したボンディング部のボンディングワイヤに接触するこ
となく、ボンディングを確実に行うことができる。In the state shown in FIG. 5A, the tip 12a of the inner capillary 12 slightly enters the outer capillary 14, but still protrudes greatly from the tip of the outer capillary 14. Therefore, the outer capillary 14 does not come into contact with the bonding wire of the adjacent bonding portion. That is, since the first bond is formed only at the distal end portion 12a of the inner capillary 12 having a small outer diameter, even an IC chip having a narrow pitch between electrodes does not come into contact with a bonding wire of an adjacent bonding portion. Bonding can be performed reliably.

【００４１】第１ボンドの形成が終了すると、キャピラ
リ１０は上方へ移動されて第２ボンドの形成位置へと移
動される。キャピラリ１０が第２ボンド形成位置に到達
すると、アーム１８が下降して、まず内側キャピラリ１
２によりボンディングワイヤ２が実装基板の電極４に押
圧される。引き続きアーム１８を下方に移動することに
より、外側キャピラリ１４が下方に移動し、最終的に図
５（ｂ）及び図７に示すような状態となる。すなわち、
内側キャピラリ１２の先端部分１２ａにより押圧されて
はみ出したボンディングパッド３の一部が外側キャピラ
リ１４により押圧される。なお、第２ボンド形成の際、
従来と同様に加圧と同時に外部ヒーターによる加熱が行
われる。また、アーム１８を超音波ホーンとして機能す
るように形成し、超音波を同時に印加することとしても
よい。When the formation of the first bond is completed, the capillary 10 is moved upward to the position where the second bond is formed. When the capillary 10 reaches the second bond forming position, the arm 18 descends, and first, the inner capillary 1
2, the bonding wire 2 is pressed against the electrode 4 of the mounting board. By continuing to move the arm 18 downward, the outer capillary 14 moves downward, and finally reaches the state shown in FIG. 5B and FIG. That is,
A part of the bonding pad 3 protruding by being pushed by the tip portion 12a of the inner capillary 12 is pushed by the outer capillary 14. In forming the second bond,
Heating by an external heater is performed simultaneously with pressurization as in the related art. Further, the arm 18 may be formed so as to function as an ultrasonic horn, and ultrasonic waves may be applied simultaneously.

【００４２】以上のように、上述の第２ボンド形成で
は、内側キャピラリ１２に加えて外径の大きい外側キャ
ピラリ１４によってもボンディングワイヤ２が押圧され
て接合されるため、大きな接合面積を得ることができ、
十分な接合強度を得ることができる。As described above, in the above-described second bond formation, the bonding wire 2 is pressed and bonded not only by the inner capillary 12 but also by the outer capillary 14 having a large outer diameter, so that a large bonding area can be obtained. Can,
Sufficient bonding strength can be obtained.

【００４３】また、内側キャピラリ１２と外側キャピラ
リ１４とは相対的に上下にスライドするだけで水平方向
の位置関係は変わることはない。したがって、内側キャ
ピラリ１２による押圧部分（接合部分）と、その外側に
形成される外側キャピラリ１４による押圧部分（接合部
分）とは常に同じ位置関係を維持しており、位置ずれを
起こすことはない。したがって、全ての接合部分におい
て正確で一様な接合強度を得ることができる。Further, the inner capillary 12 and the outer capillary 14 merely slide relatively up and down, and the positional relationship in the horizontal direction does not change. Therefore, the pressed portion (joined portion) by the inner capillary 12 and the pressed portion (joined portion) by the outer capillary 14 formed outside thereof always maintain the same positional relationship, and no positional displacement occurs. Therefore, accurate and uniform joining strength can be obtained at all joining portions.

【００４４】また、第２ボンド形成における外側キャピ
ラリ１４による押圧（接合）は内側キャピラリによる押
圧（接合）と同じ工程においてほぼ同時に行われるの
で、ボンディング時間も通常のボンディング時間より長
くなることはない。Since the pressing (joining) by the outer capillary 14 in the formation of the second bond is performed almost simultaneously with the pressing (joining) by the inner capillary, the bonding time does not become longer than the normal bonding time.

【００４５】また、本実施の形態によるキャピラリ１０
は、内側キャピラリ１２と外側キャピラリとをコイルス
プリング１６により接続して、外側キャピラリを移動す
るだけで、内側キャピラリにも押圧力を加えることがで
きる。したがって、簡単な構造により内側キャピラリ１
２と外側キャピラリ１４の両方ボンディング動作を行う
ことができる。なお、コイルスプリング１６は、適当な
引っ張り力を発生することのできる弾性部材であればよ
く、例えば、金属板ばねやゴム材等を使用することがで
きる。In addition, the capillary 10 according to the present embodiment
By connecting the inner capillary 12 and the outer capillary with the coil spring 16 and moving the outer capillary, a pressing force can be applied to the inner capillary. Therefore, the inner capillary 1 has a simple structure.
The bonding operation of both the outer capillary 14 and the outer capillary 14 can be performed. The coil spring 16 may be any elastic member that can generate an appropriate tensile force. For example, a metal plate spring or a rubber material can be used.

【００４６】次に、本発明の第２の実施の形態について
説明する。図８は本発明の第２の実施の形態によるワイ
ヤボンディング装置に設けられるキャピラリ及びアーム
の側面図である。Next, a second embodiment of the present invention will be described. FIG. 8 is a side view of a capillary and an arm provided in the wire bonding apparatus according to the second embodiment of the present invention.

【００４７】図８に示すキャピラリ２０は、上述のキャ
ピラリ１０と同じ構成であるが、コイルスプリング１６
が設けられていない点が異なる。本実施の形態では、コ
イルスプリング１６を設ける代わりに、内側キャピラリ
１２をアーム２２に取り付けている。すなわち、内側キ
ャピラリ１２の移動をアーム２２により行うことによ
り、内側キャピラリ１２と外側キャピラリ１４とを独立
して上下移動することができる。The capillary 20 shown in FIG. 8 has the same configuration as the above-described capillary 10 except that the coil spring 16 is used.
Is not provided. In the present embodiment, the inner capillary 12 is attached to the arm 22 instead of providing the coil spring 16. That is, by moving the inner capillary 12 by the arm 22, the inner capillary 12 and the outer capillary 14 can be independently moved up and down.

【００４８】このような構成によれば、第１ボンド形成
時の押圧力と第２ボンド形成時の押圧力とを任意に調整
することができ、第１ボンド及び第２ボンド共に最適な
押圧力による確実な接合を達成することができる。According to such a configuration, the pressing force at the time of forming the first bond and the pressing force at the time of forming the second bond can be arbitrarily adjusted, and the optimum pressing force for both the first bond and the second bond can be adjusted. Reliable bonding can be achieved.

【００４９】また、ア−ム１８及びアーム２０を超音波
ホーンとして形成すれば、内側キャピラリ１２及び外側
キャピラリ１４の両方に独立して超音波を印加すること
ができ、第１ボンド及び第２ボンド共に最適な超音波に
よる確実な接合を達成することができる。If the arm 18 and the arm 20 are formed as ultrasonic horns, ultrasonic waves can be independently applied to both the inner capillary 12 and the outer capillary 14, and the first bond and the second bond can be applied. In both cases, it is possible to achieve reliable bonding by optimal ultrasonic waves.

【００５０】上述の実施の形態によるワイヤボンディン
グ装置を用いて製造された半導体装置は、被実装部品
（ＩＣチップ）の電極に対するボンディング（第１ボン
ド）は先端の細い内側キャピラリを使用して行うため、
狭い電極ピッチであっても確実にボンディングを行うこ
とができる。また、実装基板の電極に対するボンディン
グ（第２ボンド）は、先端の細いキャピラリに加えてそ
の外側に設けられた太い径の外側キャピラリを同時に使
用して行われるため、実装基板の電極に対しては大きな
接合面積を得ることができ、確実な接合が達成される。
内側キャピラリによる接合部分と外側キャピラリによる
接合部分とは常に同じ位置関係で形成されるので、実装
基板の全ての電極に対して一様な接合強度を得ることが
でき、半導体装置の信頼性が向上する。In the semiconductor device manufactured by using the wire bonding apparatus according to the above-described embodiment, the bonding (first bonding) to the electrodes of the component to be mounted (IC chip) is performed using the inner capillary having a thin tip. ,
Bonding can be performed reliably even with a narrow electrode pitch. Further, the bonding (second bond) to the electrode of the mounting substrate is performed simultaneously using the thin capillary at the tip and the outer capillary having a large diameter provided outside thereof, so that the electrode of the mounting substrate is not used. A large bonding area can be obtained, and reliable bonding is achieved.
Since the joints formed by the inner capillaries and the joints formed by the outer capillaries are always formed in the same positional relationship, uniform bonding strength can be obtained for all the electrodes on the mounting board, and the reliability of the semiconductor device is improved. I do.

【発明の効果】上述の如く本発明によれば、次に述べる
種々の効果を実現することができる。請求項１及び４記
載の発明によれば、内側キャピラリに加えて外径の大き
い外側キャピラリによってもボンディングワイヤが押圧
されて接合されるため、大きな接合面積を得ることがで
き、十分な接合強度を得ることができる。According to the present invention as described above, the following various effects can be realized. According to the first and fourth aspects of the present invention, since the bonding wire is pressed and bonded by the outer capillary having a large outer diameter in addition to the inner capillary, a large bonding area can be obtained, and sufficient bonding strength can be obtained. Obtainable.

【００５１】また、内側キャピラリと外側キャピラリと
は相対的に上下移動するだけで水平方向の位置関係は変
わることはない。したがって、内側キャピラリによる押
圧部分（接合部分）と、その外側に形成される外側キャ
ピラリによる押圧部分（接合部分）とは常に同じ位置関
係を維持しており、位置ずれを起こすことはない。した
がって、全ての接合部分において正確で一様な接合強度
を得ることができる。Further, the positional relationship in the horizontal direction does not change only by moving the inner capillary and the outer capillary relatively vertically. Therefore, the pressed portion (joined portion) by the inner capillary and the pressed portion (joined portion) by the outer capillary formed outside thereof always maintain the same positional relationship, and no positional displacement occurs. Therefore, accurate and uniform joining strength can be obtained at all joining portions.

【００５２】また、外側キャピラリによる押圧（接合）
は内側キャピラリによる押圧（接合）と同じ工程におい
てほぼ同時に行われるので、ボンディング時間も通常の
ボンディング時間より長くなることはない。Pressing (joining) by the outer capillary
Is performed almost simultaneously in the same step as pressing (bonding) by the inner capillary, so that the bonding time does not become longer than the normal bonding time.

【００５３】また、請求項２記載の発明によれば、内側
キャピラリと外側キャピラリとを弾性部材により接続し
て、外側キャピラリを接合する部分に対して移動するだ
けで、内側キャピラリを接合部分に押圧することができ
る。したがって、簡単な構造により内側キャピラリと外
側キャピラリの両方のボンディング動作を行うことがで
きる。According to the second aspect of the present invention, the inner capillary and the outer capillary are connected by an elastic member, and the inner capillary is pressed against the joint by simply moving the outer capillary relative to the joint. can do. Therefore, the bonding operation of both the inner capillary and the outer capillary can be performed with a simple structure.

【００５４】また、請求項３記載の発明によれば、被実
装部品の電極に対する接合のための押圧力と実装基板の
電極に対する接合のための押圧力とを独立して任意に調
整することができ、最適な押圧力による確実な接合を達
成することができる。また、内側キャピラリを支持する
第１のア−ム及び外側キャピラリを支持する第２のアー
ムを超音波ホーンとして形成すれば、内側キャピラリ及
び外側キャピラリの両方に独立して超音波を印加するこ
とができ、被実装部品及び実装基板共に最適な超音波に
よる確実な接合を達成することができる。According to the third aspect of the present invention, the pressing force for joining the component to be mounted to the electrode and the pressing force for joining the mounting substrate to the electrode can be independently and arbitrarily adjusted. As a result, reliable bonding with optimal pressing force can be achieved. If the first arm supporting the inner capillary and the second arm supporting the outer capillary are formed as ultrasonic horns, it is possible to independently apply ultrasonic waves to both the inner capillary and the outer capillary. As a result, it is possible to achieve optimal bonding of both the component to be mounted and the mounting board by optimal ultrasonic waves.

【００５５】また、請求項５記載の発明によれば、内側
接合部分と外側接合部分とは常に同じ位置関係で形成さ
れるので、実装基板の全ての電極に対して一様な接合強
度を得ることができ、半導体装置の信頼性が向上する。According to the fifth aspect of the present invention, since the inner joint portion and the outer joint portion are always formed in the same positional relationship, uniform joining strength is obtained for all the electrodes of the mounting board. And the reliability of the semiconductor device is improved.

【図面の簡単な説明】[Brief description of the drawings]

【図１】従来のワイヤボンディング工程の一例を説明す
るための図である。FIG. 1 is a view for explaining an example of a conventional wire bonding step.

【図２】従来のワイヤボンディングに使用されるキャピ
ラリの側面図であり、（ａ）は一般的なキャピラリを示
し、（ｂ）はボトルネック型のキャピラリを示す。FIG. 2 is a side view of a capillary used for conventional wire bonding, in which (a) shows a general capillary and (b) shows a bottleneck type capillary.

【図３】第２ボンド部分の平面図であり、（ａ）は図２
（ａ）に示すキャピラリを使用した場合を示し、（ｂ）
は、図２（ｂ）に示すボトルネック型キャピラリを使用
した場合を示す。3A is a plan view of a second bond portion, and FIG.
The case where the capillary shown in (a) is used is shown, and (b)
Shows a case where the bottleneck type capillary shown in FIG. 2B is used.

【図４】本発明の第１の実施の形態によるワイヤボンデ
ィング装置に設けられるキャピラリの一部断面側面図で
ある。FIG. 4 is a partial cross-sectional side view of a capillary provided in the wire bonding apparatus according to the first embodiment of the present invention.

【図５】（ａ）は第１ボンドを形成する際のキャピラリ
の状態を示し、（ｂ）は第２ボンド部分を形成する際の
キャピラリの状態を示す図である。5A is a diagram illustrating a state of a capillary when a first bond is formed, and FIG. 5B is a diagram illustrating a state of a capillary when forming a second bond portion.

【図６】図５（ａ）の状態における第１ボンド部分を拡
大して示す図である。FIG. 6 is an enlarged view showing a first bond portion in the state of FIG. 5A.

【図７】図５（ｂ）の状態における第２ボンド部分を拡
大して示す図である。FIG. 7 is an enlarged view showing a second bond portion in the state of FIG. 5 (b).

【図８】本発明の第２の実施の形態によるワイヤボンデ
ィング装置に設けられるキャピラリ及びアームの側面図
である。FIG. 8 is a side view of a capillary and an arm provided in a wire bonding apparatus according to a second embodiment of the present invention.

【符号の説明】[Explanation of symbols]

１ ＩＣチップ １ａ，４ 電極 ２ ボンディングワイヤ ３，１０，２０ キャピラリ １２ 内側キャピラリ １２ａ 先端部分 １２ｂ フランジ部 １２ｃ 貫通孔 １４ 外側キャピラリ １４ａ 貫通孔 １６ コイルスプリング １８，２２ アーム DESCRIPTION OF SYMBOLS 1 IC chip 1a, 4 electrode 2 Bonding wire 3,10,20 Capillary 12 Inner capillary 12a Tip part 12b Flange part 12c Through hole 14 Outer capillary 14a Through hole 16 Coil spring 18,22 Arm

───────────────────────────────────────────────────── フロントページの続き (72)発明者 今井 研 愛知県春日井市高蔵寺町二丁目1844番２ 富士通ヴィエルエスアイ株式会社内 Ｆターム(参考） 5F044 AA01 AA02 BB01  ────────────────────────────────────────────────── ─── Continued on the front page (72) Inventor Ken Imai 2-1844-2 Kozoji-cho, Kasugai-shi, Aichi F-term in Fujitsu VSI Ltd. (reference) 5F044 AA01 AA02 BB01

Claims (5)

【特許請求の範囲】[Claims] 【請求項１】 被実装部品の電極と、実装基板の電極と
の間をキャピラリを使用してボンディングワイヤにより
接続するワイヤボンディング装置であって、 前記キャピラリは、 中心にボンディングワイヤ供給用の貫通孔を有し、先端
部分がボンディングワイヤを押圧して接合するような形
状に形成された内側キャピラリと、 前記内側キャピラリを収容する貫通孔を有し、前記内側
キャピラリの前記先端部分の外径より大きな外径を有す
る先端部を備えた外側キャピラリとを有しており、 前記内側キャピラリは前記外側キャピラリの前記貫通孔
内で移動可能に配置され、前記内側キャピラリの前記先
端部分が前記外側キャピラリの先端部から所定距離突出
した状態でボンディングを行うことができ、且つ前記外
側キャピラリを前記内側キャピラリに対して相対移動す
ることにより前記内側キャピラリと前記外側キャピラリ
の両方で同時にボンディングを行うことができることを
特徴とするワイヤボンディング装置。1. A wire bonding apparatus for connecting an electrode of a component to be mounted and an electrode of a mounting board by a bonding wire using a capillary, wherein the capillary has a through hole for supplying a bonding wire at a center thereof. Having an inner capillary formed in a shape such that a distal end portion presses and joins a bonding wire, and a through hole for accommodating the inner capillary, which is larger than an outer diameter of the distal end portion of the inner capillary. An outer capillary provided with a tip having an outer diameter, wherein the inner capillary is movably disposed in the through hole of the outer capillary, and the tip of the inner capillary is a tip of the outer capillary. Bonding can be performed in a state where the outer capillary protrudes from the inner capillary by a predetermined distance and Wire bonding apparatus characterized by capable of simultaneously bonding at both the outer capillary and the inner capillary by moving relative to Li. 【請求項２】 請求項１記載のワイヤボンディング装置
であって、 前記内側キャピラリと前記外側キャピラリとを接続し
て、前記外側キャピラリに作用する外力を前記内側キャ
ピラリに伝達する弾性部材を更に有し、外力が作用して
いない状態において、前記内側キャピラリの前記先端部
分は前記外側キャピラリの先端部から所定距離突出して
いることを特徴とするワイヤボンディング装置。2. The wire bonding apparatus according to claim 1, further comprising an elastic member that connects the inner capillary and the outer capillary and transmits an external force acting on the outer capillary to the inner capillary. And a wire bonding apparatus wherein the tip of the inner capillary projects a predetermined distance from the tip of the outer capillary when no external force is applied. 【請求項３】 請求項１記載のワイヤボンディング装置
であって、 前記外側キャピラリは第１のアームにより支持され、第
１のアームを移動することによって移動可能であり、前
記内側キャピラリは第２のアームにより支持され第２の
アームを移動することによって外側キャピラリとは独立
して移動可能であることを特徴とするワイヤボンディン
グ装置。3. The wire bonding apparatus according to claim 1, wherein the outer capillary is supported by a first arm, is movable by moving the first arm, and the inner capillary is a second capillary. A wire bonding apparatus, wherein the wire bonding apparatus is supported by an arm and is movable independently of an outer capillary by moving a second arm. 【請求項４】 被実装部品の電極と、実装基板の電極と
の間をボンディングワイヤにより接続するワイヤボンデ
ィング方法であって、 内側キャピラリの先端部分によりボンディングワイヤを
被実装部品の電極に押圧して接合する工程と、 ワイヤボンディングを前記内側キャピラリの先端から繰
り出しながら前記内側キャピラリを実装基板の電極上に
移動する工程と、 前記内側キャピラリの先端部分によりボンディングワイ
ヤを実装基板の電極に押圧して接合するとともに、前記
内側キャピラリを包囲するように設けられた外側キャピ
ラリを前記内側キャピラリに対して相対移動して、前記
外側キャピラリの先端によりボンディグワイヤを実装基
板の電極に押圧して接合する工程とを有することを特徴
とするワイヤボンディング方法。4. A wire bonding method for connecting an electrode of a component to be mounted and an electrode of a mounting board with a bonding wire, wherein the bonding wire is pressed against the electrode of the component by a tip of an inner capillary. Joining, and moving the inner capillary onto the electrode of the mounting board while extending wire bonding from the tip of the inner capillary; pressing the bonding wire to the electrode of the mounting board with the tip of the inner capillary to join the wire. And moving the outer capillary provided so as to surround the inner capillary relative to the inner capillary, and pressing and bonding the bonding wire to the electrode of the mounting board by the tip of the outer capillary. A wire bonding method comprising: 【請求項５】 被実装部品が実装基板に実装された半導
体装置であって、 前記被実装部品の電極は前記実装基板の電極に対してボ
ンディングワイヤにより接続されており、前記実装基板
の電極におけるボンディングワイヤの接合部分は、内側
接合部分と該内側接合部分の周囲に位置する外側接合部
分とを含み、該外側接合部分は該内側接合部分に対して
位置ずれの無い位置であることを特徴とする半導体装
置。5. A semiconductor device in which a mounted component is mounted on a mounting board, wherein an electrode of the mounted component is connected to an electrode of the mounting board by a bonding wire. The bonding portion of the bonding wire includes an inner bonding portion and an outer bonding portion located around the inner bonding portion, and the outer bonding portion is a position without displacement with respect to the inner bonding portion. Semiconductor device.
JP2000360165A 2000-11-27 2000-11-27 Apparatus and method for wire bonding and semiconductor device Withdrawn JP2002164379A (en)

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Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2000360165A JP2002164379A (en) 2000-11-27 2000-11-27 Apparatus and method for wire bonding and semiconductor device

Publications (1)

Publication Number Publication Date
JP2002164379A true JP2002164379A (en) 2002-06-07

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Family Applications (1)

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Country Link
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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7017794B2 (en) * 2003-01-14 2006-03-28 Seiko Epson Corporation Wire bonding method and wire bonding apparatus

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7017794B2 (en) * 2003-01-14 2006-03-28 Seiko Epson Corporation Wire bonding method and wire bonding apparatus

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