JP4208867B2 - Manufacturing method of semiconductor device - Google Patents

Description

  The present invention relates to a method for manufacturing a semiconductor device, and more particularly to a method for manufacturing a semiconductor device in which a protruding electrode provided on a semiconductor chip is bonded to a pad provided on a mounted member.

  In recent years, along with a demand for downsizing electronic devices represented by portable terminal devices, there is a strong demand for downsizing and weight reduction of semiconductor devices mounted on them. In order to satisfy this requirement, a flip chip bonding method is used as a semiconductor chip mounting method, and a structure in which a plurality of semiconductor chips are stacked in one package is employed.

  1 and 2 show an example of a semiconductor device that meets the demand for miniaturization. Each of the semiconductor devices 1A and 1B shown in FIGS. 1 and 2 has a structure in which daughter chips 2A and 2B and mother chips 3A and 3B are stacked (laminated) in one sealing resin 10.

  A semiconductor device 1A shown in FIG. 1 has a configuration in which a mother chip 3A is flip-chip bonded to an interposer 4. That is, the bumps 8A formed on the mother chip 3A are flip-chip bonded to the electrode portions 9 formed on the interposer 4. A die attach resin 5 is disposed between the mother chip 3 </ b> A and the interposer 4.

  The daughter chip 2A is configured to be mounted on the mother chip 3A using the adhesive 6. The daughter chip 2A and the interposer 4 are connected using a wire 7A.

  The wire 7 </ b> A and the bump 8 </ b> A are connected to the electrode portion 9 formed on the interposer 4. A through hole is formed at a position where the electrode portion 9 is formed, and a solder ball 11 serving as an external connection terminal is connected to the electrode portion 9 through the through hole.

  On the other hand, the semiconductor device 1B shown in FIG. 2 is configured such that the daughter chip 2B is flip-chip bonded to the mother chip 3B. That is, the bump 8B formed on the daughter chip 2B is flip-chip bonded to an electrode (not shown) formed on the mother chip 3B.

  The mother chip 3B is configured to be fixed on the interposer 4 using an adhesive. Further, the mother chip 3B and the interposer 4 are connected using a wire 7B. Further, the wires 7B and the bumps 8B are connected to the solder balls 11 serving as external connection terminals through through holes formed in the interposer 4 as in the semiconductor device 1A shown in FIG. .

  As described above, the semiconductor device 1A shown in FIG. 1 has the mother chip 3A (the semiconductor chip located in the lower part is called the mother chip) flip-chip bonded to the interposer, and the semiconductor device 1B shown in FIG. 2 is the daughter chip 2B (upper part). The semiconductor chip located at (5) is called a daughter chip) and is flip-chip bonded to the mother chip 3B. Various apparatuses and methods for performing the flip chip bonding have been proposed as disclosed in Patent Documents 1 to 5, for example.

  FIG. 3 shows a semiconductor manufacturing apparatus 12 which is an example of an apparatus for performing flip chip bonding. FIG. 3 shows an example in which the daughter chip 2B and the mother chip 3B are flip-chip bonded in the manufacturing process of the semiconductor device 1B.

  The semiconductor manufacturing apparatus 12 is generally composed of an ultrasonic horn 13 and a chip suction stage 14. The ultrasonic horn 13 generates ultrasonic vibration, and a suction chuck 16 is disposed below the ultrasonic horn 13.

  The suction chuck 16 is configured integrally with the ultrasonic horn 13 and thus performs ultrasonic vibration. The arrows shown in FIG. 3 indicate the amplitude direction of the ultrasonic vibration. Further, the suction chuck 16 is connected to a suction means (not shown). Therefore, the daughter chip 2B is sucked to the suction chuck 16 by this suction force.

  On the other hand, the chip suction stage 14 is disposed below the suction chuck 16, and the mother chip 3 </ b> B is placed thereon. The chip suction stage 14 is connected to a suction means (not shown). Therefore, the mother chip 3B is sucked to the chip suction stage 14 by this suction force.

Then, the daughter chip 2B and the mother chip 3B are brought close to each other with the daughter chip 2B adsorbed to the adsorption chuck 16 and the mother chip 3B adsorbed to the chip adsorption stage 14. Then, the ultrasonic horn 13 is driven in a state where the bumps 8B are in contact with the mother chip 3B. Thereby, ultrasonic vibration is applied to the bumps 8B, and the bumps 8B are melted and bonded to the mother chip 3B.
JP 2001-338951 A Japanese Patent Laid-Open No. 11-284028 JP-A-10-125734 JP 2001-308141 A JP 2001-291742 A

  By the way, as semiconductor devices become smaller, lighter, faster, and more functional, bumps 8A, 8B formed on semiconductor chips 2B, 3A tend to be miniaturized and the arrangement pitch tends to be narrower. . As described above, when the pitch of the bumps 8A and 8B is reduced, the bumps 8A and 8B are crushed at the time of ultrasonic bonding between the daughter chips 2A and 2B and the mother chips 3A and 3B, and between the adjacent bumps 8A and 8B. There is a problem that a short circuit occurs.

  A specific example will be described with reference to FIG. In the figure, an example in which the bump 8B is ultrasonically bonded is shown.

  When the bump 8B is ultrasonically bonded, if the amplitude direction of the ultrasonic wave is a direction along the longitudinal direction as indicated by an arrow in the figure, the bump 8B melted by application of ultrasonic vibration is shown in FIG. Thus, the shape extends in the direction of the amplitude of the ultrasonic wave (the direction indicated by the arrow in the figure). In other words, at the time of ultrasonic bonding, the bump 8B has an elliptical shape having a major axis in the amplitude direction of the ultrasonic wave.

  Therefore, as shown in FIG. 6, when the daughter chip 2 </ b> B and the mother chip 3 </ b> B are joined, a short circuit occurs between the adjacent bumps 8 </ b> B, specifically between the adjacent bumps 8 </ b> B in the ultrasonic amplitude direction. End up. This phenomenon also occurs in the semiconductor device 1A shown in FIG. The occurrence of a short circuit between the adjacent bumps 8A and 8B becomes a serious problem when the pitch between the bumps is 60 μm or less.

  The present invention has been made in view of the above points, and an object of the present invention is to provide a method of manufacturing a semiconductor device in which a short circuit does not occur between protruding electrodes even when the pitch between protruding electrodes is narrowed. .

In order to solve the above-described problems, in the present invention, a method of manufacturing a semiconductor device includes a step of ultrasonically bonding a protruding electrode provided on a semiconductor chip to a pad provided on a mounted member on which the semiconductor chip is mounted. In
The arrangement pitch of the plurality of first pads arranged in the same direction as the amplitude direction of the ultrasonic wave is equal to the arrangement pitch of the plurality of second pads arranged in the direction orthogonal to the amplitude direction of the ultrasonic wave. It is characterized by a long setting.

  As described above, according to the present invention, there is no possibility of short circuit even if the arrangement pitch is narrow, and therefore it is possible to prevent a short circuit from occurring between adjacent protruding electrodes.

  Next, the best mode for carrying out the present invention will be described with reference to the drawings.

7 to 9 are views for explaining a semiconductor manufacturing apparatus and a semiconductor device manufacturing method according to a first reference example of the present invention. In the following description of each reference example , an example of manufacturing the semiconductor device 1B shown in FIG. 2 will be described. However, the application of the present invention is not limited to the manufacture of the semiconductor device 1B shown in FIG. The present invention can be widely applied to mounting processes using bump electrodes (bumps and the like).

The semiconductor manufacturing apparatus according to this reference example forms bumps 8B on the daughter chip 2B. In this reference example , the bumps 8B are stud bumps, and the bumps 8B are formed using a wire bonding technique.

  The semiconductor manufacturing apparatus has a capillary 20A shown in FIG. The capillary 20A is connected to an ultrasonic generator (not shown) and is configured to perform ultrasonic vibration. The capillary 20A has an insertion hole 24 through which the gold wire 18 is inserted.

Furthermore, in the semiconductor manufacturing apparatus according to this reference example , a protrusion 21A is formed at the tip of the capillary 20A. The protrusion 21A is a circular protrusion having the same height, and thus a recess (hereinafter, this recess is referred to as a molding recess 22A) is relatively formed at the tip of the capillary 20A. Yes. The molding recess 22A functions as a mold for molding the bumps 8B, as will be described later.

  In order to form the bumps 8B on the daughter chip 2B using the semiconductor manufacturing apparatus having the above-described configuration, first, the gold wire 18 is extended from the capillary 20A, and a gold ball is discharged to the tip thereof by an electric torch (not shown). Form. Then, the gold ball is positioned at the bump forming position on the daughter chip 2B by moving the capillary 20A.

  Then, the gold ball is ultrasonically bonded to the daughter chip 2B by ultrasonically vibrating the capillary 20A. At this time, the ultrasonic bonding is performed with the protrusion 21A formed on the tip of the capillary 20A being pressed by the daughter chip 2B. In this way, the protrusion 21A is pressed against the daughter chip 2B, so that the molding recess 22A becomes a closed space during ultrasonic bonding. Further, the gold ball is melted by ultrasonic waves inside the molding recess 22A which is the closed space.

  Accordingly, it is possible to prevent the molten gold ball from protruding (leaking) out of the capillary 20A by the protrusion 21A. That is, the bumps 8B formed by the capillary 20A all have the same shape corresponding to the shape of the molding recess 22A. Thereby, the shape of the bumps 8B formed by the capillaries 20A can be aligned with a predetermined shape with high accuracy, and therefore it is possible to prevent a short circuit from occurring between the adjacent bumps 8B.

In this reference example , as described above, the protrusion 21A is integrally formed on the capillary 20A on which the bump 8B is formed, so that the capillary 20A also has a function as a forming jig for forming the bump 8B. It is said. Thereby, compared with the structure which makes a shaping | molding jig | tool and capillary 20A separate, simplification of the structure of a semiconductor manufacturing apparatus can be achieved. In addition, since the formation process of the bumps 8B and the forming process of the bumps 8B can be performed at the same time, the processing time can be shortened.

In this reference example , the protrusion 21A has a circular shape as shown in FIG. 8, but the shape of the protrusion is not limited to a circle. Specifically, as shown in FIG. 9, a configuration may be adopted in which a rectangular projection 21B is formed at the tip of the capillary 20B, and other shapes such as an ellipse may be used although not shown.

Next, a method for manufacturing a semiconductor device, which is a second reference example of the present invention, will be described.

10 and 11 are views for explaining a method of manufacturing a semiconductor device as a second reference example . In this reference example , in order to ultrasonically bond the bump 8B formed on the daughter chip 2B and the pad 15B formed on the mother chip 3B, the variable shape bonding material 23 is disposed on the bump 8B, and this variable shape is formed. The bump 8B and the pad 15 are ultrasonically bonded through the bonding material 23.

  For the deformable bonding material 23, a material that is softer than the bumps 8B and the pads 15 and that can be deformed during ultrasonic bonding is selected. As a specific example, when the bumps 8B and the pads 15 are formed of nickel, it is conceivable to use gold that is softer and deformable than nickel as the deformable bonding material 23.

  FIG. 11 shows a state where the bump 8B is bonded to the pad 15. As shown in the figure, the bumps 8 </ b> B and the pads 15 are joined via a deformable joining material 23. At this time, as described above, the variable shape bonding material 23 is softer than the bumps 8B and the pads 15 and can be deformed at the time of bonding. Therefore, the bumps 8B and the pads 15 are not deformed at the time of bonding. Only the material 23 is deformed and joined.

As described above, in the manufacturing method according to this reference example , the bumps 8B and the pads 15 are not deformed at the time of ultrasonic bonding. Therefore, even if the pitch is narrowed, no short circuit occurs between the adjacent bumps 8B and the pads 15.

  At the time of this joining, since the deformable joining material 23 is pressed at the time of ultrasonic joining, it can be considered that it protrudes slightly outside. However, the arrangement amount of the variable shape bonding material 23 is small with respect to the volume of the bump 8B, and hence the amount of protrusion is small, so that a short circuit does not occur between the adjacent variable shape bonding materials 23.

In the above-described reference example , the variable shape bonding material 23 is provided on the bump 8B. However, the variable shape bonding material 23 may be provided on the pad 15 or on both the bump 8B and the pad 15. It is good also as a provided structure.

Next, a semiconductor device manufacturing method which is a third reference example of the present invention will be described.

12 and 13 are views for explaining a method of manufacturing a semiconductor device which is a third reference example . In this reference example , similarly to the second reference example described above, in order to ultrasonically bond the bumps 8B formed on the daughter chip 2B and the pads 15B formed on the mother chip 3B, the deformable bonding material 23 is used. Via ultrasonic bonding. However, in the second reference example , the plurality of formed bumps 8B and the pads 15 have the same height, whereas in this reference example , the heights of the adjacent bumps 8B are different. .

  Specifically, as shown in FIG. 12, the bump 8B-1 is higher than the bump 8B-2 adjacent thereto. Correspondingly, the pad 15-1 bonded to the bump 8B-1 has a lower configuration than the pad 15-2 bonded to the bump 8B-2. Thus, by making the heights of the adjacent bumps 8B-1 and 8B-2 different, as shown in FIG. 13, the height of the deformable bonding material 23 after the ultrasonic bonding is also set to each bump 8B-1. It becomes different height between 8B-2.

As described above, the deformable bonding material 23 deforms and protrudes to the side when the bumps 8B (bumps 8B-1 and 8B-2) and the pads 15 (pads 15-1 and 15-2) are bonded. there is a possibility. However, as in this reference example , the height of the adjacent bumps 8B is changed, and the height of the deformable member 23 is changed accordingly. It is possible to prevent a short circuit from occurring. Therefore, the configuration of this reference example can further reduce the pitch of the bumps 8B.
Next, a semiconductor device manufacturing method which is a fourth reference example of the present invention will be described.

14 to 16 are views for explaining a method of manufacturing a semiconductor device which is a fourth reference example . In this reference example , the pitch of the bumps 8B can be narrowed by improving the positioning accuracy between the bumps 8B and the pads 15.

  Normally, the semiconductor devices 1A and 1B are subjected to a predetermined reliability test before mounting the semiconductor chips 2A, 2B, 3A and 3B. As shown in FIG. 14, this reliability test is performed using a plurality of probes 25 (only one is shown in the figure for convenience). The probe 25 is connected to a test apparatus (not shown) and is configured to supply a predetermined test signal.

  In order to perform the reliability test on the mother chip 3B, the probe 25 is pierced into the pad 15 of the mother chip 3B, whereby the test is performed by electrically connecting the probe 25 and the pad 15. When the probe 25 is pierced into the pad 15, a recess is formed in the pad 15.

The position at which the probe 25 is connected to the pad 15 has not been particularly accurate in the prior art, and has been set to a relatively low accuracy sufficient for the probe 25 to be always connected to the pad 15. On the other hand, in this reference example , the position where the probe 25 is connected to the pad 15 is configured with high accuracy.

  Specifically, when the probe 25 is configured to move, the moving accuracy of the moving device of the probe 25 is set high, and when the stage supporting the mother chip 3B moves, The moving accuracy is set high. With this configuration, the probe 25 can be connected (pierced) to a predetermined position on the pad 15 with high accuracy. Further, along with this, it is possible to improve the positional accuracy of the recess formed in the pad 15 by piercing the probe 25. The recess formed with such a high positional accuracy is hereinafter referred to as a positioning recess 26.

  FIG. 15 shows a state in which the bumps 8B and the pads 15 face each other in order to join the daughter chip 2B and the mother chip 3B. The bumps 8B are stud bumps and are formed using the wire bonding technique as described above. This stud bump has a small protrusion 27 formed when the wire is cut at the tip position.

This reference example is characterized in that ultrasonic bonding is performed by positioning the small protrusions 27 formed on the bumps 8B and the positioning recesses 26 formed on the pads 15. FIG. 16 shows a state in which the small protrusion 27 is fitted into the positioning recess 26 and the daughter chip 2B and the mother chip 3B are positioned.

As described above, the positioning accuracy of the positioning recess 26 formed in the pad 15 is high. Further, the small protrusion 27 is also accurately formed at the center position of the bump 8B. Therefore, the positioning of the bumps 8B and the pads 15 can be performed with high accuracy by positioning the positioning recesses 26 and the small protrusions 27 and performing the ultrasonic bonding process. Thereby, it is possible to prevent a short circuit from occurring between the adjacent bumps 8B due to the positional deviation between the bumps 8B and the pads 15. Therefore, also in this reference example, it is possible to realize a narrow pitch of bumps 8B.

  Note that it is conceivable that the position accuracy of the small protrusions 27 is lower than the position accuracy of the positioning recess 26. This is because the formation position of the small protrusion 27 is affected by the shape accuracy of the bump 8B. However, by using the semiconductor manufacturing apparatus (capillaries 20A and 20B) shown in FIG. 7 to FIG. 9, the shape accuracy of the formed bumps 8B can be increased, so that highly accurate positioning can be performed. .

Next, a semiconductor device manufacturing method which is a fifth reference example of the present invention will be described.

FIG. 17 is a diagram for explaining the method of manufacturing the semiconductor device as the fifth reference example . This reference example is characterized by the amplitude direction of ultrasonic vibration applied when the bumps 8B and the pads 15 are joined. That is, in this reference example , when the bump 8B and the pad 15 are ultrasonically bonded, the ultrasonic amplitude direction is different from the direction in which the bumps 8B or the pads 15 are arranged (directions indicated by arrows X and Y in the drawing). Was set to be.

  In the example shown in the figure, the amplitude direction of the ultrasonic wave is set to be about 45 ° from the X direction. However, the angle in the amplitude direction of the ultrasonic wave is not limited to this, and can be arbitrarily set.

As in this reference example, by making the direction of the amplitude of the ultrasonic waves different from the direction in which the bumps 8B and the pads 15 are arranged (X and Y directions), it is possible to prevent a short circuit from occurring between the adjacent bumps 8B. be able to. That is, when the bump 8B is melted by the ultrasonic vibration, the phenomenon that the bump 8B extends (deforms) in the amplitude direction of the ultrasonic wave occurs, but the ultrasonic amplitude direction and the arrangement direction of the bumps 8B (X and Y directions). ), The short circuit may occur between adjacent bumps (see FIG. 5).

However, even if the bump 8B is melted and extended by making the amplitude direction of the ultrasonic wave different from the arrangement direction (X, Y direction) of the bump 8B as in this reference example , the extending direction is adjacent. The direction is different from the direction in which the bumps 8B approach. Specifically, as shown in FIG. 17, the bumps 8B are arranged in parallel in an oblique direction with respect to the X and Y directions. For this reason, even if the pitch of the bumps 8B is narrowed, it is possible to prevent a short circuit from occurring between the adjacent bumps 8B.

Next, a semiconductor device manufacturing method which is a sixth reference example of the present invention will be described.

FIG. 18 is a diagram for explaining a method for manufacturing a semiconductor device according to a sixth reference example . In this reference example, the ultrasound in the amplitude direction at the time of ultrasonic bonding and bus amplifier 8B and the pad 28, (in the figure, an arrow X, a direction indicated by Y) direction of arrangement of the bumps 8B or pad 28 and a direction different from the It is set to become. In addition to this, this reference example is characterized in that the extending direction of the pad 28 is configured to be the same direction as the amplitude direction of the ultrasonic wave.

By adopting this configuration, in addition to the effects that can be realized by the configuration of the fifth reference example described above, the bonding area between the bump 8B and the pad 28 can be increased. Thereby, the bonding strength between the bump 8B and the pad 28 can be improved. Further, since the bump 8B extends along the so-called wettable pad 28, the deformation amount in the adjacent direction (X, Y direction) is small. Therefore, even if it is set as the structure of this reference example , even if bump 8B becomes narrow pitch, it can prevent that a short circuit generate | occur | produces between adjacent bump 8B.

Next, a method for manufacturing a semiconductor device according to an embodiment of the present invention will be described.

FIG. 19 is a diagram for explaining a method of manufacturing a semiconductor device according to an embodiment of the present invention . In this example, (in the drawing, an arrow X direction) ultrasonic amplitude the same direction arrangement pitch P _X pads 15A extending in the, in the direction (FIG perpendicular to the amplitude direction of the ultrasound, arrows It is characterized by being set longer than the arrangement pitch P _Y of the pads 15B extending in the (Y direction) (P _X > P _Y ).

As described above, when the bump 8B is melted by ultrasonic vibration, a phenomenon of extending in the amplitude direction of the ultrasonic wave occurs. Therefore, when the arrangement pitch P _X pad 15A disposed in the (X-direction in this embodiment) amplitude in the same direction as that of the ultrasonic wave is small, short-circuit between the bumps 8B adjacent to the time of ultrasonic bonding is May occur. In contrast, the pad 15B disposed in a direction orthogonal to the ultrasonic amplitude direction (the Y direction in this embodiment) differs from the extending direction of the melted bump 8B, and therefore the disposed pitch is different. There is no possibility of short circuit even if P _{Y is set} to a narrow pitch.

Therefore, distribution in the direction (Y direction) of the arrangement pitch P _X of disposed a pad 15A to the ultrasonic amplitude in the same direction (X direction) as in the present embodiment, perpendicular to the amplitude direction of the ultrasonic By setting the pitch to be longer than the arrangement pitch P _{Y of the} provided pad 15B, a short circuit is caused between adjacent bumps 8B while reducing the size of the semiconductor device (in this embodiment, particularly in the Y direction). It can be prevented from occurring.

Next, a semiconductor manufacturing apparatus which is a second reference example of the present invention will be described.

FIG. 20 is a diagram for explaining a semiconductor manufacturing apparatus 30 as a second reference example . In the semiconductor manufacturing apparatus and the semiconductor device manufacturing method according to each of the reference examples and examples described above, the ultrasonic vibration is applied only in one direction and the bump 8B is ultrasonically bonded to the pad 15.

On the other hand, the semiconductor manufacturing apparatus 30 according to the present reference example is characterized in that ultrasonic vibration can be applied in two different directions when the bumps 8B and the pads 15 are ultrasonically bonded. In this reference example , the amplitude direction of the ultrasonic vibration is configured to be orthogonal to the X direction and the Y direction. For this reason, the semiconductor manufacturing apparatus 30 includes an X-direction ultrasonic horn 31 that generates ultrasonic vibration whose amplitude direction is the X direction, and a Y-direction ultrasonic horn 32 that generates ultrasonic vibration whose amplitude direction is the Y direction. It is set as the structure which has.

  The X-direction ultrasonic horn 31 is connected to suction means (not shown), and thus the daughter chip 2B is configured to be sucked by the X-direction ultrasonic horn 31. Further, the Y-direction ultrasonic horn 32 is also connected to a suction means (not shown), and thus the mother chip 3B is configured to be sucked by the Y-direction ultrasonic horn 32.

  Then, the daughter chip 2B and the mother chip 3B are brought close to each other with the daughter chip 2B adsorbed to the X direction ultrasonic horn 31 and the mother chip 3B adsorbed to the Y direction ultrasonic horn 32. Then, the ultrasonic horns 31 and 32 are driven in a state where the bump 8B is in contact with the mother chip 3B. Thus, the daughter chip 2B performs ultrasonic vibration having an X direction amplitude by the X direction ultrasonic horn 31, and the mother chip 3B performs ultrasonic vibration having an Y direction amplitude by the Y direction ultrasonic horn 32.

Thus, in this reference example , the direction of ultrasonic vibration by the X-direction ultrasonic horn 31 and the direction of ultrasonic vibration by the Y-direction ultrasonic horn 32 are different, so that the ultrasonic wave in each direction (X, Y direction) is different. Even if the amplitude of the sonic vibration is reduced, the bump 8B and the pad 15 can be reliably bonded. As described above, since the amplitude of the ultrasonic vibration can be reduced, the vibration amount (movement amount) by which the bump 8B and the pad 15 are vibrated at the time of the bonding process can be reduced. It is possible to prevent a short circuit from occurring.

In particular, in this reference example , since the amplitude directions of the ultrasonic vibrations generated by the ultrasonic horns 31 and 32 are orthogonal to each other, the amount of vibration in each vibration direction during the ultrasonic bonding process is minimized. Thus, a short circuit between adjacent bumps 8B can be prevented more reliably.

Regarding the above description, the following items are further disclosed.
(Supplementary Note 1) In a semiconductor manufacturing apparatus for forming a protruding electrode on a semiconductor chip,
While providing a forming jig for forming the protruding electrode into a predetermined shape,
A semiconductor manufacturing apparatus, wherein a protrusion for preventing the protruding electrode from protruding outside the forming jig is formed at a position of the forming jig where the protruding electrode is formed.
(Appendix 2) In the semiconductor manufacturing apparatus described in Appendix 1,
While the protruding electrode is a stud bump,
A semiconductor manufacturing apparatus in which the forming jig and a capillary for forming the stud bump are integrated.
(Appendix 3) In the semiconductor manufacturing apparatus described in Appendix 1 or 2,
The semiconductor manufacturing apparatus characterized in that the shape of the protrusion is one shape selected from a circle, an ellipse, and a rectangle.
(Additional remark 4) In the semiconductor manufacturing apparatus which joins the protrusion electrode provided in the semiconductor chip to the pad provided in the to-be-mounted member in which this semiconductor chip is mounted,
First ultrasonic vibration applying means for ultrasonically vibrating the semiconductor chip in one direction;
2. A semiconductor manufacturing apparatus comprising: a second ultrasonic vibration means for ultrasonically vibrating the mounted member in a direction different from the ultrasonic vibration of the semiconductor chip.
(Appendix 5) In the semiconductor manufacturing apparatus described in Appendix 4,
A semiconductor manufacturing apparatus, wherein the ultrasonic vibration direction of the semiconductor chip and the ultrasonic vibration direction of the mounted member are orthogonal to each other.
(Additional remark 6) In the manufacturing method of the semiconductor device which has the process of joining the protrusion electrode provided in the semiconductor chip to the pad provided in the to-be-mounted member in which this semiconductor chip is mounted,
At least one of the protruding electrode provided on the semiconductor chip or the pad provided on the mounted member is provided with a deformable bonding material configured to be deformable during the bonding,
A method of manufacturing a semiconductor device, wherein the protruding electrode and the pad are bonded via the variable bonding material.
(Supplementary note 7) In the method for manufacturing a semiconductor device according to supplementary note 6,
A method of manufacturing a semiconductor device, wherein the heights of the adjacent protruding electrodes are made different.
(Additional remark 8) In the manufacturing method of the semiconductor device which has the process of ultrasonically bonding the projection electrode provided in the semiconductor chip to the pad provided in the to-be-mounted member in which the semiconductor chip is mounted,
A method of manufacturing a semiconductor device, characterized in that, when the protruding electrode and the pad are ultrasonically bonded, the amplitude direction of the ultrasonic wave to the semiconductor chip is different from the alignment direction of the protruding electrodes.
(Additional remark 9) In the manufacturing method of the semiconductor device which has the process of ultrasonically bonding the projection electrode provided in the semiconductor chip to the pad provided in the to-be-mounted member in which the semiconductor chip is mounted,
A method of manufacturing a semiconductor device, wherein when the protruding electrode and the pad are ultrasonically bonded, the direction of the ultrasonic wave applied to the semiconductor chip and the extending direction of the pad are the same direction.
(Additional remark 10) In the manufacturing method of a semiconductor device which has the process of carrying out ultrasonic bonding of the projection electrode provided in the semiconductor chip to the pad provided in the member to which the semiconductor chip is mounted,
The arrangement pitch of the pads extending in the same direction as the amplitude direction of ultrasonic waves is set longer than the arrangement pitch of the pads extending in a direction orthogonal to the amplitude direction of the ultrasonic waves. A method for manufacturing a semiconductor device.
(Additional remark 11) In the manufacturing method of the semiconductor device which has the process of joining the stud bump provided in the semiconductor chip to the pad provided in the to-be-mounted member in which the semiconductor chip is mounted,
Further, the probe is electrically connected by piercing the pad, and a process for testing the mounted member through the probe is provided.
When joining the stud bump to the pad, the concave portion formed on the pad by the probe in the step of testing the mounted member and the small protrusion formed on the tip end portion of the stud bump are positioned. A method for manufacturing a semiconductor device, wherein the bonding is performed.
(Supplementary note 12) In the method for manufacturing a semiconductor device according to supplementary notes 6 to 11,
The method for manufacturing a semiconductor device, wherein the mounted member is a semiconductor chip.

FIG. 1 is a cross-sectional view of a semiconductor device as a subject of the present invention (No. 1). FIG. 2 is a cross-sectional view of a semiconductor device as a subject of the present invention (part 2). FIG. 3 is a view showing a conventional semiconductor manufacturing apparatus. FIG. 4 is a diagram for explaining a conventional problem and is a diagram illustrating a bottom surface of a daughter chip. FIG. 5 is a diagram for explaining a conventional problem and shows a state in which adjacent bumps are short-circuited (No. 1). FIG. 6 is a diagram for explaining a conventional problem, and shows a state in which adjacent bumps are short-circuited (part 2). FIG. 7 is a diagram for explaining a semiconductor device manufacturing method and a semiconductor manufacturing apparatus according to a first reference example of the present invention. FIG. 8 is an enlarged view showing the capillary provided in the semiconductor manufacturing apparatus as the first reference example of the present invention. FIG. 9 is a view showing a modification of the capillary shown in FIG. FIG. 10 is a diagram for explaining a method of manufacturing a semiconductor device which is a second reference example of the present invention, and shows a state before chip bonding. FIG. 11 is a view for explaining the semiconductor device manufacturing method according to the second reference example of the present invention, and shows a state after chip bonding. FIG. 12 is a view for explaining a modified example of the semiconductor device manufacturing method which is the third reference example of the present invention, and shows a state before chip bonding. FIG. 13 is a view for explaining a modified example of the semiconductor device manufacturing method according to the third reference example of the present invention, and shows a state after chip bonding. FIG. 14 is a diagram for explaining a method of manufacturing a semiconductor device which is a fourth reference example of the present invention, and shows a state in which a test is performed on a chip. FIG. 15 is a view for explaining the semiconductor device manufacturing method according to the fourth reference example of the present invention, and shows a state before chip bonding. FIG. 16 is a view for explaining the semiconductor device manufacturing method which is the fourth reference example of the present invention, and shows a state after chip bonding. FIG. 17 is a diagram for explaining a method of manufacturing a semiconductor device which is a fifth reference example of the invention, and is a diagram showing a bonding state between pads and bumps on a mother chip. FIG. 18 is a view for explaining the method of manufacturing a semiconductor device according to the sixth reference example of the invention, and is a view showing a bonding state between pads and bumps on the mother chip. FIG. 19 is a diagram for explaining a method of manufacturing a semiconductor device according to an embodiment of the present invention, and shows a bonding state between pads and bumps on a mother chip. FIG. 20 is a diagram for explaining a semiconductor manufacturing apparatus which is a second reference example of the present invention.

Explanation of symbols

1A, 1B Semiconductor device 2A, 2B Daughter chip 3A, 3B Mother chip 8A, 8B Bump 15, 28 Pad 16 Vibrating body 20A, 20B Capillary 21A, 21B Protrusion 22A, 22B Molding recess 23 Variable bonding material 25 Probe 26 Positioning recess 27 Small projection 30 Semiconductor manufacturing equipment 31 X direction ultrasonic horn 32 Y direction ultrasonic horn

Claims (1)

In a method of manufacturing a semiconductor device, the method includes ultrasonically bonding a protruding electrode provided on a semiconductor chip to a pad provided on a mounted member on which the semiconductor chip is mounted.
The arrangement pitch of the plurality of first pads arranged in the same direction as the amplitude direction of the ultrasonic wave is equal to the arrangement pitch of the plurality of second pads arranged in the direction orthogonal to the amplitude direction of the ultrasonic wave. A method for manufacturing a semiconductor device, characterized in that the semiconductor device is set long.

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