JPH07273267A - Method of bonding lead - Google Patents
Method of bonding leadInfo
- Publication number
- JPH07273267A JPH07273267A JP6064180A JP6418094A JPH07273267A JP H07273267 A JPH07273267 A JP H07273267A JP 6064180 A JP6064180 A JP 6064180A JP 6418094 A JP6418094 A JP 6418094A JP H07273267 A JPH07273267 A JP H07273267A
- Authority
- JP
- Japan
- Prior art keywords
- lead
- laser
- lead frame
- terminal
- bonded
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Abstract
Description
【0001】[0001]
【産業上の利用分野】本発明は、半導体集積回路素子
(以下、チップと称する)を搭載し、外部回路に接続す
るために用いるリードフレームに関し、特にリードと接
続用端子との接合方法に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a lead frame for mounting a semiconductor integrated circuit element (hereinafter referred to as a chip) and connecting it to an external circuit, and more particularly to a method for joining a lead and a connecting terminal.
【0002】[0002]
【従来の技術】リードフレームのリードと接続用端子と
をレーザー照射による溶接にて接合する方法は周知であ
り、一般にレーザー光を接合箇所に対して斜め上方より
照射していた。2. Description of the Related Art A method for joining a lead of a lead frame and a connecting terminal by welding by laser irradiation is well known, and generally, a laser beam is applied obliquely from above to a joining portion.
【0003】前記溶接を要する箇所としては、 アウター・リード先端部とプリント配線板等の外部回
路の接続用端子。 インナー・リード先端部とチップを搭載したプリント
配線板の接続用端子。がある。The places where the welding is required are terminals for connecting the outer lead tips to external circuits such as a printed wiring board. A terminal for connecting a printed wiring board that mounts the tip of the inner lead and the chip. There is.
【0004】例えばクワッド・フラット・パッケージ
(Quad Flat Package …リードが四方に張り出した構造
のリードフレームを用いた半導体パッケージ)を接続す
る場合、接合箇所(辺)を変更する度に、レーザーの照
射方向(光軸)を変える必要があり、レーザー照射装置
がその駆動機構を要する大がかりなものとなる。For example, in the case of connecting a quad flat package (a semiconductor package using a lead frame having a structure in which leads project in four directions), the laser irradiation direction is changed each time the joint (side) is changed. Since it is necessary to change the (optical axis), the laser irradiation device becomes a large-scale device requiring its driving mechanism.
【0005】[0005]
【発明が解決しようとする課題】昨今、リードフレーム
は、半導体装置の高集積化・高機能化の要求により、リ
ード数が増大する傾向(以下、多ピン化と称する)にあ
り、前記溶接工程の所要時間も増大の一途をたどってお
り、接続用端子を有するプリント配線板が温度上昇によ
りダメージを受けるという弊害もある。In recent years, the number of leads in a lead frame has tended to increase (hereinafter referred to as "multi-pinning") due to the demand for higher integration and higher functionality of semiconductor devices. However, there is also an adverse effect that the printed wiring board having the connecting terminals is damaged by the temperature rise.
【0006】本発明は、レーザー照射装置の簡略化・レ
ーザー接合工程の短縮化の可能なリードの接合方法を提
供することを目的とする。It is an object of the present invention to provide a lead joining method capable of simplifying a laser irradiation device and shortening a laser joining process.
【0007】[0007]
【課題を解決するための手段】上記目的を達成するため
に、本発明では、接合箇所(リード先端部と接続用端子
の重なった部分)に対して、レーザー光を垂直上方より
照射する。In order to achieve the above object, according to the present invention, a laser beam is applied vertically upward to a joining portion (a portion where a lead tip portion and a connecting terminal overlap).
【0008】好ましくは、前記リード先端部が他の部分
と比べて薄い構造のリードフレームを用いてレーザー接
合を行なう。Preferably, laser bonding is performed by using a lead frame having a structure in which the tip of the lead is thinner than other portions.
【0009】[0009]
【実施例】以下、図面に基づいて本発明の実施例につい
て説明する。Embodiments of the present invention will be described below with reference to the drawings.
【0010】(1) リードフレーム 0.15mm厚の42合金(Ni…42重量%,残り…
Fe)を、既知の手法により成形し、リードフレーム10
を得た。この際、インナー・リードの先端部は、既知の
ハーフエッチングにより、厚さを0.09mmとした。(1) Lead frame 0.15 mm thick 42 alloy (Ni 42% by weight, balance ...
Fe) is molded by a known method, and the lead frame 10
Got At this time, the tip portion of the inner lead was made to have a thickness of 0.09 mm by known half etching.
【0011】(2) チップ搭載用プリント配線板 一方、チップを搭載するプリント配線板11の接続用端子
は、Cuパターンの表面にNiめっき層を介して、厚さ
1〜2μmのAuめっきを施した構成である。(2) Chip-Mounted Printed Wiring Board On the other hand, the connection terminals of the printed wiring board 11 on which the chip is mounted are plated with Au to a thickness of 1 to 2 μm on the surface of the Cu pattern via the Ni plating layer. It is a configuration.
【0012】(3) レーザー接合 上記(1) と(2) とを、図1に概略的に示す装置を用いて
レーザー接合する。 <接合条件> レーザー光源…YAGレーザー レーザービーム径…20μm レーザー出力…1W 照射時間…0.2秒/リード 上記の条件で、X−Yステージを移動させつつ、リード
本数だけレーザー接合処理を繰り返した。(3) Laser Bonding The above (1) and (2) are laser bonded using an apparatus schematically shown in FIG. <Joining conditions> Laser light source: YAG laser Laser beam diameter: 20 μm Laser output: 1 W Irradiation time: 0.2 seconds / read Under the above conditions, the laser bonding process was repeated for the number of leads while moving the XY stage. .
【0013】[0013]
【発明の効果】 レーザー接合装置が、レーザー光源の駆動機構を要さ
ず、簡略化された。 溶接部のリード厚を薄くしたことで、接合所要時間が
短縮され、多ピン化されたリードフレームに対応しやす
くなったと共に、所要時間の増大に伴うプリント配線板
への加熱による弊害が軽減された。[Effects of the Invention] The laser bonding apparatus is simplified without the need for a drive mechanism of the laser light source. By reducing the lead thickness of the welded part, the joining time is shortened, it is easy to handle lead frames with multiple pins, and the adverse effects of heating the printed wiring board due to the increase in the required time are reduced. It was
【0014】[0014]
【図1】本発明の接合方法を概略的に示す説明図。FIG. 1 is an explanatory view schematically showing a joining method of the present invention.
10…リードフレーム 11…プリント配線板 10 ... Lead frame 11 ... Printed wiring board
Claims (2)
ームのリードと接続用端子とをレーザー照射による溶接
にて接合する方法において、レーザー光を接合箇所の上
方より垂直に照射することを特徴とするリードの接合方
法。1. A method of joining a lead of a lead frame on which a semiconductor integrated circuit element is mounted and a connecting terminal by welding by laser irradiation, wherein laser light is vertically irradiated from above the bonding portion. Lead joining method.
ード先端部が、他の部分より薄く加工されたものを用い
る請求項1に記載のリードの接合方法。2. The lead joining method according to claim 1, wherein a lead frame whose lead end portion, which is a joining portion, is processed thinner than other portions is used as the lead frame.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP6064180A JPH07273267A (en) | 1994-03-31 | 1994-03-31 | Method of bonding lead |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP6064180A JPH07273267A (en) | 1994-03-31 | 1994-03-31 | Method of bonding lead |
Publications (1)
Publication Number | Publication Date |
---|---|
JPH07273267A true JPH07273267A (en) | 1995-10-20 |
Family
ID=13250611
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP6064180A Pending JPH07273267A (en) | 1994-03-31 | 1994-03-31 | Method of bonding lead |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH07273267A (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2007227893A (en) * | 2006-01-24 | 2007-09-06 | Nec Electronics Corp | Semiconductor device manufacturing method |
US7843700B2 (en) | 2004-04-14 | 2010-11-30 | Denso Corporation | Semiconductor device |
US11271352B2 (en) | 2018-08-08 | 2022-03-08 | Mitsubishi Electric Corporation | Power semiconductor device and manufacturing method thereof, and power conversion device |
-
1994
- 1994-03-31 JP JP6064180A patent/JPH07273267A/en active Pending
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7843700B2 (en) | 2004-04-14 | 2010-11-30 | Denso Corporation | Semiconductor device |
US8179688B2 (en) | 2004-04-14 | 2012-05-15 | Denso Corporation | Semiconductor device |
JP2007227893A (en) * | 2006-01-24 | 2007-09-06 | Nec Electronics Corp | Semiconductor device manufacturing method |
US11271352B2 (en) | 2018-08-08 | 2022-03-08 | Mitsubishi Electric Corporation | Power semiconductor device and manufacturing method thereof, and power conversion device |
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